JPH0786623A - Photovoltaic device - Google Patents
Photovoltaic deviceInfo
- Publication number
- JPH0786623A JPH0786623A JP5229954A JP22995493A JPH0786623A JP H0786623 A JPH0786623 A JP H0786623A JP 5229954 A JP5229954 A JP 5229954A JP 22995493 A JP22995493 A JP 22995493A JP H0786623 A JPH0786623 A JP H0786623A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- sections
- film
- insulating film
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は光起電力装置に関し、
特にたとえば微小サイズに形成され、太陽電池や光セン
サなどの光起電力装置および集積型光起電力装置に関す
る。This invention relates to photovoltaic devices,
In particular, the present invention relates to a photovoltaic device such as a solar cell or an optical sensor, which is formed in a minute size, and an integrated photovoltaic device.
【０００２】[0002]
【従来の技術】光起電力装置は、太陽電池に代表される
ように半導体膜の光起電力効果を利用した光−電気エネ
ルギ変換装置である。最近の太陽電池開発は、大面積、
高効率でさらに低コスト化の方向に進んでいる。一方、
マイクロマシンの開発がここ最近活発となり、そのエネ
ルギ供給装置として微小サイズの高効率光起電力装置の
開発要求が高まりつつある。2. Description of the Related Art A photovoltaic device is a photo-electric energy conversion device which utilizes the photovoltaic effect of a semiconductor film as represented by a solar cell. Recent solar cell development has
We are moving toward higher efficiency and lower costs. on the other hand,
The development of micromachines has become active recently, and the demand for development of highly efficient photovoltaic devices of minute size is increasing as an energy supply device.
【０００３】このような高効率光起電力装置の一例を図
４に示す。従来の光起電力装置１においては、まず、図
４（Ａ）に示すように絶縁性基板２上に、金属膜からな
る下層電極，光電変換膜，および透過導電膜からなる上
層電極が順に積層されて光電変換層３が形成される。そ
して、図４（Ｂ）に示すように、ＹＡＧレーザなどのレ
ーザ照射等によって光電変換層３の一部を蒸発させて除
去し、光電変換層３を分割する。そして、図４（Ｃ）に
示すように、その上にＳｉＯ2 やポリイミド等の有機薄
膜からなる絶縁保護膜４が形成され、従来の光起電力装
置１が得られる。An example of such a high-efficiency photovoltaic device is shown in FIG. In the conventional photovoltaic device 1, first, as shown in FIG. 4 (A), a lower layer electrode made of a metal film, a photoelectric conversion film, and an upper layer electrode made of a transparent conductive film are sequentially laminated on an insulating substrate 2. Thus, the photoelectric conversion layer 3 is formed. Then, as shown in FIG. 4B, a part of the photoelectric conversion layer 3 is evaporated and removed by laser irradiation such as YAG laser, and the photoelectric conversion layer 3 is divided. Then, as shown in FIG. 4C, an insulating protective film 4 made of an organic thin film such as SiO 2 or polyimide is formed thereon, and the conventional photovoltaic device 1 is obtained.
【０００４】[0004]
【発明が解決しようとする課題】このような従来技術に
おいては、光電変換層３がレーザ照射等によって分割さ
れるとき、発生する熱によって光電変換層３の分割部を
挟む端部の半導体接合が熱的に破壊され、その部分に図
４（Ｃ）に示すように導電性半導体膜からなる変質部５
が形成される。したがって、従来の光起電力装置１で
は、動作時に変質部５を通してリーク電流が流れ、その
結果、光電変換装置の光電変換効率が悪化してしまうと
いう問題点があった。In such a conventional technique, when the photoelectric conversion layer 3 is divided by laser irradiation or the like, the semiconductor junctions at the end portions sandwiching the divided portion of the photoelectric conversion layer 3 by the heat generated. It is thermally destroyed, and the altered portion 5 made of a conductive semiconductor film is formed in that portion as shown in FIG. 4 (C).
Is formed. Therefore, in the conventional photovoltaic device 1, there is a problem that a leak current flows through the altered portion 5 during operation, and as a result, the photoelectric conversion efficiency of the photoelectric conversion device deteriorates.
【０００５】それゆえに、この発明の主たる目的は、変
質部のリーク電流による光電変換効率等の特性の悪化を
防止できる、光起電力装置を提供することである。Therefore, a main object of the present invention is to provide a photovoltaic device capable of preventing deterioration of characteristics such as photoelectric conversion efficiency due to a leak current of an altered portion.
【０００６】[0006]
【課題を解決するための手段】第１の発明は、絶縁性基
板上に分割部で分割して形成される光電変換層を含む光
起電力装置において、分割部を挟んで光電変換層より厚
い絶縁膜を絶縁性基板上に形成したことを特徴とする、
光起電力装置である。第２の発明は、絶縁性基板上に分
割部で分割して形成される光電変換層を直列接続した集
積型光起電力装置において、分割部を挟んで光電変換層
より厚い絶縁膜を形成したことを特徴とする、集積型光
起電力装置である。According to a first aspect of the present invention, in a photovoltaic device including a photoelectric conversion layer formed by dividing a divided portion on an insulating substrate, the photoelectric conversion layer is thicker than the photoelectric conversion layer with the divided portion interposed therebetween. An insulating film is formed on an insulating substrate,
It is a photovoltaic device. A second aspect of the present invention is an integrated photovoltaic device in which photoelectric conversion layers divided by dividing portions are connected in series on an insulating substrate, and an insulating film thicker than the photoelectric converting layer is formed with the dividing portions interposed. An integrated photovoltaic device characterized by the above.
【０００７】[0007]
【作用】いずれの場合も、分割部を形成するために光電
変換層または光電変換膜にレーザ等のエネルギビームを
照射するとその分割部に導電性の変質部が形成される
が、絶縁膜によって変質部と光電変換層とを分離するの
で、動作時に変質部で発生したリーク電流が流れなくな
る。In either case, when the photoelectric conversion layer or the photoelectric conversion film is irradiated with an energy beam such as a laser to form the divided portion, a conductive altered portion is formed in the divided portion. Since the portion and the photoelectric conversion layer are separated, the leak current generated in the altered portion during operation does not flow.
【０００８】[0008]
【発明の効果】この発明によれば、エネルギビーム照射
によって光電変換層を分割する際に形成される変質部に
リーク電流が流れることがないので、このようなリーク
電流に起因する光電変換効率の低下を生じない。この発
明の上述の目的，その他の目的，特徴および利点は、図
面を参照して行う以下の実施例の詳細な説明から一層明
らかとなろう。According to the present invention, since a leak current does not flow in an altered portion formed when the photoelectric conversion layer is divided by the energy beam irradiation, the photoelectric conversion efficiency due to such a leak current can be improved. Does not cause deterioration. The above-mentioned objects, other objects, features and advantages of the present invention will become more apparent from the following detailed description of the embodiments with reference to the drawings.
【０００９】[0009]
【実施例】図１を参照して、この発明の一実施例に従っ
た光起電力装置１０を製造工程順に説明する。まず、図
１（Ａ）に示すように、ガラス，石英，セラミックまた
はその表面に絶縁膜が形成されたステンレスなどからな
る絶縁性基板１２上に、ＳｉＯx またはＳｉＮx などの
耐熱性絶縁膜１４を、たとえばプラズマＣＶＤ膜または
熱ＣＶＤによって、形成する。その後、図１（Ｂ）に示
すように、耐熱性絶縁膜１４によって分割部１６に当た
る部分が両側から挟まれるように、耐熱性絶縁膜１４
が、たとえばフォトリソ工程によってパターニングされ
て分割される。すなわち、耐熱性絶縁膜１４は、図１
（Ｃ）の工程で形成される光電変換層１８と図１（Ｄ）
の工程で形成されてしまう変質部２０とを分離するよう
に形成される。耐熱性絶縁膜１４の膜厚は、光電変換層
１８の厚みに比較して十分厚く（たとえば２倍以上に）
形成する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Referring to FIG. 1, a photovoltaic device 10 according to an embodiment of the present invention will be described in the order of manufacturing steps. First, as shown in FIG. 1 (A), a heat resistant insulating film 14 such as SiO x or SiN x is formed on an insulating substrate 12 made of glass, quartz, ceramic or stainless steel having an insulating film formed on the surface thereof. Are formed, for example, by plasma CVD film or thermal CVD. After that, as shown in FIG. 1B, the heat-resistant insulating film 14 is sandwiched by the heat-resistant insulating film 14 so that the portion corresponding to the dividing portion 16 is sandwiched from both sides.
Are patterned and divided by, for example, a photolithography process. That is, the heat-resistant insulating film 14 is formed as shown in FIG.
The photoelectric conversion layer 18 formed in the step (C) and FIG.
It is formed so as to be separated from the altered portion 20 that will be formed in the step of. The film thickness of the heat-resistant insulating film 14 is sufficiently thicker than the thickness of the photoelectric conversion layer 18 (for example, twice or more).
Form.
【００１０】図１（Ｂ）の工程で耐熱性絶縁膜１４を分
割した後、図１（Ｃ）の工程で下層電極，光電変換膜お
よび上層電極の３層構造を有する光電変換層１８が形成
される。詳細には図示しないが、よく知られているよう
に、まずＴｉ，Ｍｏ，Ｐｔ，Ａｕ，ＡｌまたはＡｇ等の
金属膜によって下層電極を形成し、続いて、下からｎ，
ｉ，ｐ層のたとえば非晶質シリコン膜からなる光電変換
膜がたとえばプラズマＣＶＤ法によって形成され、その
上にＩＴＯのような透明導電膜をスパッタリングによっ
て上層電極として形成する。このようにして、下層電
極，光電変換膜および上層電極の３層構造からなる光電
変換層１８が形成される。なお、このとき耐熱性絶縁膜
１４上にも光電変換層１８が形成されるが、これは、耐
熱性絶縁膜１４の膜厚が十分大きいため、絶縁性基板１
２上の光電変換層１８から孤立する。After dividing the heat resistant insulating film 14 in the step of FIG. 1B, a photoelectric conversion layer 18 having a three-layer structure of a lower electrode, a photoelectric conversion film and an upper electrode is formed in the step of FIG. 1C. To be done. Although not shown in detail, as is well known, a lower electrode is first formed by a metal film of Ti, Mo, Pt, Au, Al, Ag, or the like, and then n,
A photoelectric conversion film made of, for example, an amorphous silicon film for the i and p layers is formed by, for example, a plasma CVD method, and a transparent conductive film such as ITO is formed thereon as an upper layer electrode by sputtering. In this way, the photoelectric conversion layer 18 having a three-layer structure of the lower layer electrode, the photoelectric conversion film, and the upper layer electrode is formed. At this time, the photoelectric conversion layer 18 is also formed on the heat-resistant insulating film 14, but this is because the heat-resistant insulating film 14 has a sufficiently large film thickness.
2 is isolated from the photoelectric conversion layer 18 above.
【００１１】次いで、図１（Ｄ）に示すように、耐熱性
絶縁膜１４間の分割部１６（図１（Ｂ））の部分の光電
変換層１８上に、ＹＡＧレーザなどのレーザビームある
いは他のエネルギビームを照射する。応じて、この部分
の光電変換層１８が蒸発し、光電変換層１８が分割され
る。このエネルギビーム照射による光電変換層１８の分
割の際、そのとき発生する熱によって光電変換層１８が
部分的に熱的ダメージを受け、分割部を挟んだ光電変換
層１８の端部が導電性半導体に変質した変質部２０が形
成される。ただし、耐熱性絶縁膜１４に挟まれた動作部
の光電変換層１８は、エネルギビーム照射による熱がこ
の耐熱性絶縁膜１４で遮断されるので、熱的なダメージ
を受けることはない。Then, as shown in FIG. 1D, a laser beam such as a YAG laser or the like is formed on the photoelectric conversion layer 18 in the portion of the divided portion 16 (FIG. 1B) between the heat resistant insulating films 14. Irradiate the energy beam of. Accordingly, the photoelectric conversion layer 18 in this portion is evaporated and the photoelectric conversion layer 18 is divided. When the photoelectric conversion layer 18 is divided by the irradiation with the energy beam, the photoelectric conversion layer 18 is partially thermally damaged by the heat generated at that time, and the ends of the photoelectric conversion layer 18 sandwiching the divided portion have conductive semiconductors. An altered portion 20 that has been altered to However, the photoelectric conversion layer 18 of the operating portion sandwiched by the heat resistant insulating film 14 is not thermally damaged because the heat generated by the energy beam irradiation is blocked by the heat resistant insulating film 14.
【００１２】そして、図１（Ｅ）に示すように、分割に
よって形成された凹部２２の埋め込み用と素子の保護膜
用として、たとえばＡｌ2 Ｏ3 ，ＭｇＯまたはＢｅＯ等
からなる比較的熱導電率の高い絶縁膜２４が、たとえば
スパッタリングあるいは熱ＣＶＤによって形成される。
そして、その上にたとえば透明絶縁膜であるポリイミド
等からなる保護膜２６が形成される。このようにして、
保護膜２６側からの光をエネルギ変換するいわゆる逆タ
イプの光起電力装置１０が得られる。Then, as shown in FIG. 1 (E), a relatively thermal conductivity of, for example, Al 2 O 3 , MgO, or BeO is used for filling the recesses 22 formed by division and for protecting the element. The high insulating film 24 is formed by, for example, sputtering or thermal CVD.
Then, a protective film 26 made of, for example, polyimide, which is a transparent insulating film, is formed thereon. In this way
The so-called reverse type photovoltaic device 10 that converts the energy of light from the protective film 26 side can be obtained.
【００１３】この光起電力装置１０では、耐熱性絶縁膜
１４を形成することによって、エネルギビーム照射によ
って生じる変質部２０を光電変換層１８から分離できる
とともに、エネルギビーム照射で発生する熱が耐熱性絶
縁膜１４によって遮られて動作部の光電変換層１８に伝
わることがない。したがって、もし耐熱性絶縁膜１４が
なければ変質部２０を通してリーク電流が流れるが、変
質部２０を光電変換層１８から分離しているので、変質
部２０を通してリーク電流が流れることはない。したが
って、リーク電流に起因する光電変換効率の低下を防げ
る。さらに、動作部の光電変換層１８が熱的ダメージを
受けることがないので、それによる効率低下も防止でき
る。In this photovoltaic device 10, by forming the heat-resistant insulating film 14, the altered portion 20 generated by the energy beam irradiation can be separated from the photoelectric conversion layer 18, and the heat generated by the energy beam irradiation is heat resistant. It is not blocked by the insulating film 14 and transmitted to the photoelectric conversion layer 18 of the operating portion. Therefore, if the heat-resistant insulating film 14 is not provided, the leak current flows through the altered portion 20, but since the altered portion 20 is separated from the photoelectric conversion layer 18, the leak current does not flow through the altered portion 20. Therefore, it is possible to prevent a decrease in photoelectric conversion efficiency due to the leak current. Furthermore, since the photoelectric conversion layer 18 of the operating portion is not thermally damaged, it is possible to prevent the efficiency from being lowered.
【００１４】さらに、比較的熱伝導率の高い絶縁膜２４
を凹部１８に埋め込むことによって、絶縁性基板１２と
絶縁膜２４とを熱的に結合することになり、動作時に光
（特に強度の大きい光）を照射した場合に光起電力装置
１０および絶縁性基板１２の下に蓄積する熱を効率よく
放熱でき、光起電力装置１０の温度上昇を抑制できる。
また、絶縁性基板１２上の素子表面の凹凸の程度が、従
来より大きくなることから、保護膜２６表面の凹凸も大
きくなりその表面積が増大することからも、放熱効率の
一層の向上が期待できる。Further, the insulating film 24 having a relatively high thermal conductivity.
Embedded in the recess 18, the insulating substrate 12 and the insulating film 24 are thermally coupled to each other, and the photovoltaic device 10 and the insulating property can be obtained when light (especially high intensity light) is irradiated during operation. The heat accumulated under the substrate 12 can be efficiently radiated, and the temperature rise of the photovoltaic device 10 can be suppressed.
Further, since the degree of unevenness of the element surface on the insulating substrate 12 becomes larger than that of the conventional one, the unevenness of the surface of the protective film 26 also becomes large and the surface area increases, so that further improvement of the heat dissipation efficiency can be expected. .
【００１５】さらに、この実施例では、分割部１６に位
置する光電変換層１８を他の光電変換層１８から分離で
きるので、エネルギビームを照射する位置の判別および
それによる分割が容易になるという利点もある。なお、
素子の面積が微小化するほど光電変換出力に対する変質
部のリーク電流の割合が大きくなることを考えると、こ
の実施例は、特に、光電変換層１８の受光面積が数ミリ
角以下と微小な光起電力装置１０に有効となるものでは
あるが、より大きなサイズのものにも適用できることは
いうまでもない。Further, in this embodiment, since the photoelectric conversion layer 18 located in the dividing portion 16 can be separated from the other photoelectric conversion layers 18, it is easy to determine the position where the energy beam is irradiated and the division by it becomes easy. There is also. In addition,
Considering that the ratio of the leak current of the altered portion to the photoelectric conversion output becomes larger as the area of the element becomes smaller, this embodiment particularly has a light receiving area of the photoelectric conversion layer 18 of a few millimeters square or less and a small amount of light. Although it is effective for the electromotive force device 10, it goes without saying that it can also be applied to a larger size device.
【００１６】また、上述の実施例では、逆タイプの光起
電力装置１０について述べたが、これに限定されず、絶
縁性基板１２側からの光をエネルギ変換するいわゆる順
タイプの光起電力装置にもこの発明を適用できる。この
場合、絶縁性基板１２はたとえばガラスまたは石英等に
よって形成し、光電変換層１８は、絶縁性基板１２側か
ら順に積層された透明導電膜，光電変換膜および金属膜
を含む。そして、光電変換膜を構成するたとえば非晶質
シリコン膜は、下からｐ，ｉ，ｎ層の順に積層される。Further, in the above-mentioned embodiment, the reverse type photovoltaic device 10 is described, but the present invention is not limited to this, and is a so-called forward type photovoltaic device for converting light from the insulating substrate 12 side into energy. The present invention can also be applied to. In this case, the insulating substrate 12 is formed of, for example, glass or quartz, and the photoelectric conversion layer 18 includes a transparent conductive film, a photoelectric conversion film, and a metal film which are sequentially stacked from the insulating substrate 12 side. Then, for example, an amorphous silicon film forming the photoelectric conversion film is laminated from the bottom in the order of p, i, and n layers.
【００１７】さらに、光電変換膜の材料は、結晶系シリ
コン，さらにＧａＡｓ系あるいはＣｄＳ系であってもよ
い。図２および図３を参照して、この発明の他の実施例
に従った集積型太陽電池３０を製造工程順に説明する。
なお、この実施例の集積型太陽電池３０は、絶縁性基板
１２側からの光をエネルギ変換するいわゆる順タイプの
装置であり、分割部３４（図２（Ｅ））によって分割し
かつ隣接する光電変換膜３６が導体膜すなわち透明導電
膜３２および裏面電極４０によって直列接続する。この
発明は分割部３４に適用される。Further, the material of the photoelectric conversion film may be crystalline silicon, GaAs or CdS. Referring to FIGS. 2 and 3, an integrated solar cell 30 according to another embodiment of the present invention will be described in the order of manufacturing steps.
The integrated solar cell 30 of this embodiment is a so-called forward type device that converts light from the insulating substrate 12 side into energy, and is divided by the dividing unit 34 (FIG. 2 (E)) and adjacent photoelectric cells. The conversion film 36 is connected in series by the conductor film, that is, the transparent conductive film 32 and the back electrode 40. The present invention is applied to the dividing unit 34.
【００１８】まず、図２（Ａ）に示すように、たとえば
ガラスまたは石英等によって形成される絶縁性基板１２
を準備し、図２（Ｂ）に示すように絶縁性基板１２の表
面にたとえばＩＴＯなどの透明導電膜３２を形成する。
そして、図２（Ｃ）に示すように、透明導電膜３２の分
割部３４に相当する部分にＹＡＧレーザ等のレーザビー
ムを照射して、透明導電膜３２が隣接セル毎に分割され
る。その上に、図２（Ｄ）に示すように、たとえばＳｉ
Ｎx やＳｉＯ2 等の耐熱性絶縁膜１４が形成される。耐
熱性絶縁膜１４の膜厚は、図３（Ａ）の工程で形成され
る光電変換膜３６の厚みに比較して十分厚くされる。次
いで、図２（Ｅ）に示すように、耐熱性絶縁膜１４がパ
ターニングされる。すなわち、耐熱性絶縁膜１４がフォ
トリソ工程によってパターニングされ、耐熱性絶縁膜１
４が分割部３４に当たる位置を両側から挟むように分割
される。すなわち、耐熱性絶縁膜１４は、後に形成され
る光電変換膜３６と変質部３８とを分離するように形成
される。なお、先に述べた実施例においてもそうである
ように、耐熱性絶縁膜１４がＳｉＯ2 によって形成され
た場合には、たとえば希ＨＦ（バッファドフッ酸）を用
いてパターニングされる。First, as shown in FIG. 2 (A), an insulating substrate 12 made of, for example, glass or quartz.
Then, as shown in FIG. 2B, a transparent conductive film 32 such as ITO is formed on the surface of the insulating substrate 12.
Then, as shown in FIG. 2C, a portion of the transparent conductive film 32 corresponding to the dividing portion 34 is irradiated with a laser beam such as a YAG laser to divide the transparent conductive film 32 into adjacent cells. On top of that, as shown in FIG.
A heat resistant insulating film 14 such as N x or SiO 2 is formed. The film thickness of the heat resistant insulating film 14 is made sufficiently thicker than the thickness of the photoelectric conversion film 36 formed in the step of FIG. Next, as shown in FIG. 2E, the heat resistant insulating film 14 is patterned. That is, the heat-resistant insulating film 14 is patterned by the photolithography process,
4 is divided so that the position where it hits the dividing portion 34 is sandwiched from both sides. That is, the heat resistant insulating film 14 is formed so as to separate the photoelectric conversion film 36 to be formed later and the altered portion 38. When the heat-resistant insulating film 14 is made of SiO 2 , as in the above-described embodiments, it is patterned using, for example, dilute HF (buffered hydrofluoric acid).
【００１９】そして、図３（Ａ）に示すように、その上
に光電変換膜３６を形成する。光電変換膜３６では、た
とえば非晶質シリコン膜が下からｐ，ｉ，ｎ層の順に積
層される。そして、図３（Ｂ）に示すように、ＹＡＧレ
ーザ等のエネルギビームを照射することによって光電変
換膜３６をパターニングする。このとき発生する熱によ
って光電変換膜３６が熱的ダメージを受け、分割部３４
を挟んだ光電変換膜が導電性半導体に変質した変質部３
８が形成される。ただし、先の実施例と同様に、耐熱性
絶縁膜１４に挟まれた動作部の光電変換膜３６は熱的な
ダメージを受けない。そして、その上に、図３（Ｃ）に
示すように、たとえばＴｉ，Ａｌ，Ａｇ，ＩＴＯなどか
らなる裏面電極４０を形成する。したがって、隣接する
光電変換膜３６は、透明導電膜３２および裏面電極４０
を介して直列接続される。次いで、図３（Ｄ）に示すよ
うに、ＹＡＧレーザ等のエネルギビームを照射すること
によって、裏面電極４０を分割する。その後、図３
（Ｅ）に示すように、その上にたとえば透明絶縁膜であ
るポリイミド等からなる保護膜２６を形成する。このよ
うにして、集積型太陽電池３０が形成される。Then, as shown in FIG. 3A, a photoelectric conversion film 36 is formed thereon. In the photoelectric conversion film 36, for example, an amorphous silicon film is laminated in the order of p, i, and n layers from the bottom. Then, as shown in FIG. 3B, the photoelectric conversion film 36 is patterned by irradiating an energy beam such as a YAG laser. The photoelectric conversion film 36 is thermally damaged by the heat generated at this time, and the dividing portion 34
Altered part 3 in which the photoelectric conversion film sandwiching the film is transformed into a conductive semiconductor
8 is formed. However, as in the previous embodiment, the photoelectric conversion film 36 of the operating portion sandwiched by the heat resistant insulating film 14 is not thermally damaged. Then, as shown in FIG. 3C, a back surface electrode 40 made of, for example, Ti, Al, Ag, ITO or the like is formed thereon. Therefore, the adjacent photoelectric conversion film 36 includes the transparent conductive film 32 and the back electrode 40.
Are connected in series via. Next, as shown in FIG. 3D, the back electrode 40 is divided by irradiating an energy beam such as a YAG laser. After that, FIG.
As shown in (E), a protective film 26 made of, for example, polyimide, which is a transparent insulating film, is formed thereon. In this way, the integrated solar cell 30 is formed.
【００２０】この実施例の集積型太陽電池３０において
も、耐熱性絶縁膜１４を形成することによって、変質部
３８を動作部の光電変換膜３６から分離できるととも
に、エネルギビーム照射のときに発生する熱が耐熱性絶
縁膜１４によって遮られ、光電変換膜３６に伝わらな
い。したがって、動作時に変質部３８を通してリーク電
流が流れることがないし、動作部の光電変換膜３６が熱
的ダメージを受けないので、光電変換効率の低下を防げ
る。Also in the integrated solar cell 30 of this embodiment, by forming the heat-resistant insulating film 14, the altered portion 38 can be separated from the photoelectric conversion film 36 of the operating portion, and is generated at the time of energy beam irradiation. The heat is blocked by the heat resistant insulating film 14 and is not transferred to the photoelectric conversion film 36. Therefore, a leak current does not flow through the altered portion 38 during operation, and the photoelectric conversion film 36 in the operating portion is not thermally damaged, so that a decrease in photoelectric conversion efficiency can be prevented.
【００２１】なお、図２および図３に示す実施例では、
順タイプの集積型光起電力装置について述べたが、これ
に限定されず、保護膜２６側からの光をエネルギ変換す
るいわゆる逆タイプの集積型太陽電池にもこの発明を適
用できる。この場合、絶縁性基板１２は、セラミックま
たはその表面に絶縁膜が形成されたステンレスなどによ
っても形成され得る。そして、図２および図３に示す実
施例の透明導電膜３２と裏面電極４０とが入れ換えられ
る。In the embodiment shown in FIGS. 2 and 3,
Although the forward type integrated photovoltaic device has been described, the present invention is not limited to this, and the present invention can also be applied to a so-called reverse type integrated solar cell that converts energy from the protective film 26 side into energy. In this case, the insulating substrate 12 may be formed of ceramic or stainless steel having an insulating film formed on the surface thereof. Then, the transparent conductive film 32 and the back electrode 40 of the embodiment shown in FIGS. 2 and 3 are exchanged.
【００２２】なお、上述の各実施例では、絶縁性基板１
２上に形成される絶縁膜として、耐熱性絶縁膜１４を用
いたが、耐熱性のない絶縁膜であってもよい。なぜな
ら、変質部２０または３８と動作部の光電変換層１８ま
たは光電変換膜３６とを電気的に分離してリーク電流が
流れないようにすればよいからである。ただし、耐熱性
がさほど大きくない絶縁膜を用いた場合でも、絶縁膜を
幅広に形成することによって耐熱性を向上させることが
でき、上述の実施例と同様の効果が得られる。In each of the above embodiments, the insulating substrate 1 is used.
Although the heat-resistant insulating film 14 is used as the insulating film formed on the second insulating film 2, it may be an insulating film having no heat resistance. This is because the altered portion 20 or 38 and the photoelectric conversion layer 18 or the photoelectric conversion film 36 of the operating portion may be electrically separated so that a leak current does not flow. However, even when an insulating film whose heat resistance is not so large is used, the heat resistance can be improved by forming the insulating film wide, and the same effect as that of the above-described embodiment can be obtained.
【図１】この発明の一実施例を製造工程順に示す図解図
である。FIG. 1 is an illustrative view showing one embodiment of the present invention in the order of manufacturing steps.
【図２】この発明の他の実施例の製造工程の一部を示す
図解図である。FIG. 2 is an illustrative view showing a part of the manufacturing process of another embodiment of the present invention.
【図３】図２の製造工程の続きを示す図解図である。FIG. 3 is an illustrative view showing a sequel to the manufacturing process of FIG. 2;
【図４】従来技術の製造工程を示す図解図である。FIG. 4 is an illustrative view showing a manufacturing process of a conventional technique.
１０ …光起電力装置 １２ …絶縁性基板 １４ …耐熱性絶縁膜 １６，３４ …分割部 １８ …光電変換層 ２０，３８ …変質部 ２２ …凹部 ２４ …絶縁膜 ３０ …集積型太陽電池 ３２ …透明導電膜 ３６ …光電変換膜 ４０ …裏面電極 DESCRIPTION OF SYMBOLS 10 ... Photovoltaic device 12 ... Insulating substrate 14 ... Heat resistant insulating film 16,34 ... Dividing part 18 ... Photoelectric conversion layer 20, 38 ... Altered part 22 ... Recessed part 24 ... Insulating film 30 ... Integrated solar cell 32 ... Transparent Conductive film 36 ... Photoelectric conversion film 40 ... Backside electrode
Claims (2)
る光電変換層を含む光起電力装置において、 前記分割部を挟んで前記光電変換層より厚い絶縁膜を前
記絶縁性基板上に形成したことを特徴とする、光起電力
装置。1. A photovoltaic device comprising a photoelectric conversion layer formed on an insulating substrate by being divided by dividing portions, wherein an insulating film thicker than the photoelectric conversion layer is sandwiched on the insulating substrate. A photovoltaic device, characterized in that
る光電変換層を直列接続した集積型光起電力装置におい
て、 前記分割部を挟んで前記光電変換層より厚い絶縁膜を形
成したことを特徴とする、集積型光起電力装置。2. An integrated photovoltaic device in which photoelectric conversion layers divided by dividing portions are connected in series on an insulating substrate, and an insulating film thicker than the photoelectric converting layer is formed with the dividing portions sandwiched therebetween. An integrated photovoltaic device characterized by the above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5229954A JPH0786623A (en) | 1993-09-16 | 1993-09-16 | Photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5229954A JPH0786623A (en) | 1993-09-16 | 1993-09-16 | Photovoltaic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0786623A true JPH0786623A (en) | 1995-03-31 |
Family
ID=16900318
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5229954A Withdrawn JPH0786623A (en) | 1993-09-16 | 1993-09-16 | Photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0786623A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001274446A (en) * | 2000-03-23 | 2001-10-05 | Kanegafuchi Chem Ind Co Ltd | Method of manufacturing integrated hybrid thin film solar battery |
| US9741884B2 (en) | 2009-03-31 | 2017-08-22 | Lg Innotek Co., Ltd. | Solar cell and method of fabricating the same |
-
1993
- 1993-09-16 JP JP5229954A patent/JPH0786623A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001274446A (en) * | 2000-03-23 | 2001-10-05 | Kanegafuchi Chem Ind Co Ltd | Method of manufacturing integrated hybrid thin film solar battery |
| US9741884B2 (en) | 2009-03-31 | 2017-08-22 | Lg Innotek Co., Ltd. | Solar cell and method of fabricating the same |
| US9893221B2 (en) | 2009-03-31 | 2018-02-13 | Lg Innotek Co., Ltd. | Solar cell and method of fabricating the same |
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