JPH0785967A - Electroluminescent panel - Google Patents
Electroluminescent panelInfo
- Publication number
- JPH0785967A JPH0785967A JP5233778A JP23377893A JPH0785967A JP H0785967 A JPH0785967 A JP H0785967A JP 5233778 A JP5233778 A JP 5233778A JP 23377893 A JP23377893 A JP 23377893A JP H0785967 A JPH0785967 A JP H0785967A
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- film
- thin film
- specific gravity
- panel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 claims abstract description 53
- 239000010409 thin film Substances 0.000 claims abstract description 43
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 17
- 229920003023 plastic Polymers 0.000 claims abstract description 11
- 230000005484 gravity Effects 0.000 claims description 38
- 239000011248 coating agent Substances 0.000 claims description 27
- 238000000576 coating method Methods 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 12
- 238000005401 electroluminescence Methods 0.000 claims description 8
- 239000000126 substance Substances 0.000 abstract description 6
- 238000010030 laminating Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 38
- 238000000034 method Methods 0.000 description 27
- 229910004298 SiO 2 Inorganic materials 0.000 description 15
- 238000007740 vapor deposition Methods 0.000 description 14
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 10
- 229920002799 BoPET Polymers 0.000 description 9
- 239000000395 magnesium oxide Substances 0.000 description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- 239000005083 Zinc sulfide Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- 239000005038 ethylene vinyl acetate Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229920000620 organic polymer Polymers 0.000 description 5
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 229910052984 zinc sulfide Inorganic materials 0.000 description 5
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 4
- 229910002113 barium titanate Inorganic materials 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- -1 polyethylene Polymers 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- YMRMDGSNYHCUCL-UHFFFAOYSA-N 1,2-dichloro-1,1,2-trifluoroethane Chemical compound FC(Cl)C(F)(F)Cl YMRMDGSNYHCUCL-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- XPFVYQJUAUNWIW-UHFFFAOYSA-N furfuryl alcohol Chemical compound OCC1=CC=CO1 XPFVYQJUAUNWIW-UHFFFAOYSA-N 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000002985 plastic film Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004695 Polyether sulfone Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- DIKBFYAXUHHXCS-UHFFFAOYSA-N bromoform Chemical compound BrC(Br)Br DIKBFYAXUHHXCS-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- KXJGSNRAQWDDJT-UHFFFAOYSA-N 1-acetyl-5-bromo-2h-indol-3-one Chemical compound BrC1=CC=C2N(C(=O)C)CC(=O)C2=C1 KXJGSNRAQWDDJT-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- WRQNANDWMGAFTP-UHFFFAOYSA-N Methylacetoacetic acid Chemical compound COC(=O)CC(C)=O WRQNANDWMGAFTP-UHFFFAOYSA-N 0.000 description 1
- 229920001007 Nylon 4 Polymers 0.000 description 1
- 229920002292 Nylon 6 Polymers 0.000 description 1
- 229920002302 Nylon 6,6 Polymers 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000002216 antistatic agent Substances 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 229950005228 bromoform Drugs 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- NZZFYRREKKOMAT-UHFFFAOYSA-N diiodomethane Chemical compound ICI NZZFYRREKKOMAT-UHFFFAOYSA-N 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 208000028659 discharge Diseases 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000005188 flotation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000009998 heat setting Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- LYGJENNIWJXYER-UHFFFAOYSA-N nitromethane Chemical compound C[N+]([O-])=O LYGJENNIWJXYER-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010421 standard material Substances 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明はエレクトロルミネッセン
スパネルに関する。さらに詳しくは、輝度が高く、かつ
耐久性に優れたエレクトロルミネッセンスパネルに関す
る。FIELD OF THE INVENTION This invention relates to electroluminescent panels. More specifically, the present invention relates to an electroluminescence panel having high brightness and excellent durability.
【0002】[0002]
【従来の技術】エレクトロルミネッセンスパネル(以
下、ELパネルという)は、各種のディスプレイ、液晶
などのバックライトなど様々な用途に用いられている。
従来のELパネルは、アルミニウムなどの金属板の片面
に、誘電体層を印刷し、その上に蛍光体層を印刷し、さ
らにその上に透明導電性フィルムを熱圧着することによ
り作られている。2. Description of the Related Art Electroluminescence panels (hereinafter referred to as EL panels) are used in various applications such as various displays and backlights for liquid crystals.
A conventional EL panel is made by printing a dielectric layer on one surface of a metal plate such as aluminum, printing a phosphor layer on the dielectric layer, and then thermocompressing a transparent conductive film on the dielectric layer. .
【0003】上記蛍光体層に含有される硫化亜鉛などの
蛍光体物質は、吸湿により著しく劣化するため、上記従
来のELパネルの耐久性は乏しい。このような吸湿によ
る劣化を防止するために、防湿フィルムで透明導電性フ
ィルムを被覆する方法が行われている。防湿フィルムと
しては、例えば、三フッ化塩化エチレンフィルム上に、
エチレン−酢酸ビニル共重合体(以下、EVAという)
などの接着層を有するフィルムが用いられている。しか
し、この防湿フィルムは光線透過率が低いため、ELパ
ネルを使用しはじめるときの輝度(以下、初期輝度とい
う)が低くなってしまうという欠点を有している。酸化
珪素薄膜を用いたガスバリアフィルムで被覆する方法も
あるが、無色透明ではなく褐色を帯びているため初期輝
度が低く、かつ耐久性にも問題がある。これらのことか
ら、輝度の低下が少なく、かつ耐久性に優れたELパネ
ルの開発が望まれている。The phosphor substance such as zinc sulfide contained in the phosphor layer is significantly deteriorated by moisture absorption, and thus the durability of the conventional EL panel is poor. In order to prevent such deterioration due to moisture absorption, a method of covering the transparent conductive film with a moisture-proof film is used. As the moisture-proof film, for example, on a trifluoroethylene chloride film,
Ethylene-vinyl acetate copolymer (hereinafter referred to as EVA)
A film having an adhesive layer such as is used. However, since the moisture-proof film has a low light transmittance, it has a drawback that the brightness (hereinafter referred to as initial brightness) when using the EL panel is low. There is also a method of coating with a gas barrier film using a silicon oxide thin film, but since it is not colorless and transparent but has a brownish color, initial luminance is low and durability is also problematic. For these reasons, there is a demand for the development of an EL panel that has a small decrease in brightness and excellent durability.
【0004】[0004]
【発明が解決しようとする課題】本発明は、上記従来の
問題点を解決するものであり、その目的は、輝度が高
く、かつ耐久性に優れたELパネルを提供することにあ
る。SUMMARY OF THE INVENTION The present invention solves the above-mentioned conventional problems, and an object thereof is to provide an EL panel having high brightness and excellent durability.
【0005】[0005]
【課題を解決するための手段】本発明者らは、特定の被
覆用フィルムを有するエレクトロルミネッセンスパネル
を開発した。The present inventors have developed an electroluminescent panel having a specific coating film.
【0006】本発明のエレクトロルミネッセンスパネル
は、導電板上に、誘電体層、蛍光体層、および透明導電
性フィルムが順次形成された積層体を含む、エレクトロ
ルミネッセンスパネルであって、この積層体は、透明な
プラスチック基材の少なくとも片面に酸化珪素と少なく
とも一種の他の酸化物とからなる酸化物薄膜を有する被
覆用フィルムによって、全体が被覆され、そのことによ
り、上記目的が達成される。The electroluminescence panel of the present invention is an electroluminescence panel including a laminate in which a dielectric layer, a phosphor layer, and a transparent conductive film are sequentially formed on a conductive plate. The whole is coated with a coating film having an oxide thin film composed of silicon oxide and at least one other oxide on at least one surface of a transparent plastic substrate, thereby achieving the above object.
【0007】好ましい実施態様においては、上記被覆用
フィルムの酸化物薄膜の比重は、結晶状態の酸化物の比
重に対し55〜100%である。In a preferred embodiment, the specific gravity of the oxide thin film of the coating film is 55 to 100% with respect to the specific gravity of the crystalline oxide.
【0008】本発明に用いられる導電板としては、アル
ミニウム、銅、銀、金などの金属などの板が挙げられる
が、この導電板は電極として使用されるため、導電性を
有する物質であれば特に限定されない。導電板はまた、
酸化などの劣化防止や接着性向上の目的で、導電性を損
なわない範囲で、表面処理またはコーティングが施され
ていても良い。Examples of the conductive plate used in the present invention include plates made of metal such as aluminum, copper, silver and gold. Since the conductive plate is used as an electrode, any conductive material can be used. There is no particular limitation. The conductive plate is also
For the purpose of preventing deterioration such as oxidation and improving adhesiveness, surface treatment or coating may be carried out within a range not impairing conductivity.
【0009】上記導電板上に形成される誘電体層はチタ
ン酸バリウムを主成分とする。チタン酸バリウムなどの
他にチタン酸ストロンチウム、チタン酸鉛、酸化ハフニ
ウム、酸化アルミニウム、酸化タンタル、酸化ケイ素な
どの他の誘電体も含有され得る。誘電体層を上記導電板
上に形成する方法は、特に限定されないが、例えば、高
誘電性樹脂(後述)にチタン酸バリウムまたはこれを主
成分とする誘電体の粉末を公知の方法で分散させ、これ
をスクリーン印刷またはロールコーティングなどの公知
の方法で上記導電板上に印刷する方法がある。誘電体層
の厚みは、5〜8μmであることが好ましく、10〜5
0μmであることがより好ましい。The dielectric layer formed on the conductive plate contains barium titanate as a main component. In addition to barium titanate and the like, other dielectrics such as strontium titanate, lead titanate, hafnium oxide, aluminum oxide, tantalum oxide, and silicon oxide may also be included. The method for forming the dielectric layer on the conductive plate is not particularly limited. For example, barium titanate or a dielectric powder containing the same as the main component is dispersed in a high dielectric resin by a known method. There is a method of printing this on the conductive plate by a known method such as screen printing or roll coating. The thickness of the dielectric layer is preferably 5 to 8 μm, and 10 to 5
It is more preferably 0 μm.
【0010】本発明に用いられる蛍光体層に含有される
蛍光体は硫化亜鉛を主成分とし、他の蛍光体が蛍光体層
の性質を変化させない程度の量で含有されていてもよ
い。蛍光体層には添加物が含有され得る。蛍光体層を上
記誘電体層上に形成する方法は、特に限定されないが、
例えば、上記誘電体層を形成するのに用いた高誘電性樹
脂に、硫化亜鉛などの蛍光体の粉末を公知の方法で分散
させ、これを、スクリーン印刷またはロールコーティン
グなどの公知の方法で上記誘電体層上に印刷する方法が
ある。蛍光体層の厚みは、8〜300μmであることが
好ましく、20〜100μmであることがより好まし
い。The phosphor contained in the phosphor layer used in the present invention may contain zinc sulfide as a main component, and other phosphors may be contained in such an amount that the properties of the phosphor layer are not changed. Additives may be contained in the phosphor layer. The method for forming the phosphor layer on the dielectric layer is not particularly limited,
For example, the high dielectric resin used to form the dielectric layer is dispersed with a powder of phosphor such as zinc sulfide by a known method, and the powder is dispersed by a known method such as screen printing or roll coating. There is a method of printing on the dielectric layer. The thickness of the phosphor layer is preferably 8 to 300 μm, more preferably 20 to 100 μm.
【0011】上記誘電体層および蛍光体層に用いられる
チタン酸バリウム、硫化亜鉛などの粉末は、その目的を
損なわない範囲で表面処理などを施してあってもよい。
上記誘電体層および蛍光体層に用いられる高誘電性樹脂
としては、シアノエチルセルロースなどが挙げられ、エ
チレングリコールモノメチルエーテル、テトラヒドロフ
ラン、メチルエチルケトン、アセトニトリル、フルフリ
ルアルコール、メチルアセトアセテート、ニトロメタ
ン、N,N−ジメチルホルムアミド、N−メチル−2−
ピロリドン、アセトン、シクロヘキサノンなどに溶解し
て用いられる。The powder of barium titanate, zinc sulfide or the like used for the above-mentioned dielectric layer and phosphor layer may be subjected to surface treatment or the like within a range that does not impair its purpose.
Examples of the high dielectric resin used for the dielectric layer and the phosphor layer include cyanoethyl cellulose and the like. Ethylene glycol monomethyl ether, tetrahydrofuran, methyl ethyl ketone, acetonitrile, furfuryl alcohol, methyl acetoacetate, nitromethane, N, N- Dimethylformamide, N-methyl-2-
It is used by dissolving it in pyrrolidone, acetone, cyclohexanone, etc.
【0012】本発明に用いられる透明導電性フィルムと
は、透明プラスチックシートの少なくとも片面の全面ま
たは一部に、導電性物質を含む単層または多層の透明な
薄膜を有するフィルムである。上記透明プラスチックシ
ートとしては、ポリエステル、ポリエーテルスルフォ
ン、ポリカーボネート、ポリスチレンなどからなるシー
トが挙げられる。上記導電性物質としては、酸化インジ
ュウム、酸化錫、インジュウム錫酸化物、金、銀、パラ
ジウムなどが挙げられる。このような導電性物質を含む
透明薄膜を透明プラスチックシート上に形成するには、
スパッタリング、真空蒸着、イオンプレーティング、塗
布などの方法が挙げられる。この透明導電性フィルムを
上記蛍光体層に接着する方法は、特に限定されないが、
ヒートプレス、ロールラミネートなどの公知の熱圧着す
る方法が挙げられる。The transparent conductive film used in the present invention is a film having a single-layer or multi-layer transparent thin film containing a conductive substance on at least one surface of a transparent plastic sheet or a part thereof. Examples of the transparent plastic sheet include sheets made of polyester, polyether sulfone, polycarbonate, polystyrene and the like. Examples of the conductive material include indium oxide, tin oxide, indium tin oxide, gold, silver and palladium. To form a transparent thin film containing such a conductive substance on a transparent plastic sheet,
Examples of the method include sputtering, vacuum deposition, ion plating and coating. The method for adhering this transparent conductive film to the phosphor layer is not particularly limited,
Known methods of thermocompression bonding such as heat pressing and roll laminating may be mentioned.
【0013】本発明に用いられる被覆用フィルムとは、
プラスチック基材の少なくとも片面に酸化珪素と少なく
とも一種の他の酸化物とからなる酸化物薄膜が形成され
たフィルムである。The coating film used in the present invention is
It is a film in which an oxide thin film made of silicon oxide and at least one other oxide is formed on at least one surface of a plastic substrate.
【0014】上記プラスチック基材とは、有機高分子を
溶融押出しをし、必要に応じて長手方向および/または
幅方向に延伸し、次いで冷却し、その後熱固定を施した
フィルムのことをいう。有機高分子としては、ポリエチ
レン、ポリプロピレン、ポリエチレンテレフタレート、
ポリエチレン−2,6−ナフタレート、ナイロン6、ナ
イロン4、ナイロン66、ポリアミドイミド、ポリイミ
ド、ポリエーテルイミド、ポリカーボネート、ポリスチ
レン、ポリエーテルスルホン、あらゆる種類の芳香族ポ
リアミドなどが挙げられる。これらの有機高分子は、単
独でも用いられるが、2種以上を少量ずつ共重合したも
のまたはブレンドしたものも用いられ得る。さらにこの
有機高分子には、公知の添加剤、例えば、紫外線吸収
剤、帯電防止剤、可塑剤、滑剤、着色剤などが添加され
ていてもよい。このプラスチック基材は、本発明の目的
を損なわない限り、基材上に酸化物薄膜を形成する前
に、基材の表面に、コロナ放電処理、グロー放電処理な
どの表面粗面化処理、アンカーコート処理、印刷、装飾
などを施してもよい。プラスチック基材の厚みは、10
〜250μmの範囲が好ましい。The above-mentioned plastic substrate means a film obtained by melt-extruding an organic polymer, stretching it in the longitudinal direction and / or the width direction as required, then cooling and then heat-setting. As the organic polymer, polyethylene, polypropylene, polyethylene terephthalate,
Polyethylene-2,6-naphthalate, nylon 6, nylon 4, nylon 66, polyamide imide, polyimide, polyether imide, polycarbonate, polystyrene, polyether sulfone, aromatic polyamides of all kinds and the like can be mentioned. These organic polymers may be used alone, but may be used by copolymerizing or blending two or more kinds little by little. Further, known additives such as an ultraviolet absorber, an antistatic agent, a plasticizer, a lubricant and a coloring agent may be added to the organic polymer. This plastic substrate is, unless the object of the present invention is impaired, before the oxide thin film is formed on the substrate, the surface of the substrate is subjected to surface roughening treatment such as corona discharge treatment or glow discharge treatment, and anchors. It may be coated, printed, or decorated. The thickness of the plastic substrate is 10
The range of ˜250 μm is preferable.
【0015】上記酸化物薄膜には、酸化珪素および酸化
珪素以外の少なくとも一種の他の酸化物が含有されてい
る。酸化珪素は10%以上含まれていることが好まし
く、20%以上の酸化珪素が含まれていることがより好
ましい。上記酸化珪素以外の酸化物とは、金属、半導体
または珪素以外の非金属と、酸素との化合物のことをい
い、例えば、酸化アルミニウム、酸化マグネシウム、酸
化カルシウム、酸化ホウ素、酸化ジルコニウム、酸化チ
タン、酸化亜鉛、酸化ストロンチウム、酸化バリウム、
酸化ハフニウムなどをいい、特にこれらに限定されな
い。The oxide thin film contains silicon oxide and at least one other oxide other than silicon oxide. The silicon oxide content is preferably 10% or more, and more preferably 20% or more. The oxide other than silicon oxide refers to a compound of a metal, a semiconductor or a non-metal other than silicon, and oxygen, such as aluminum oxide, magnesium oxide, calcium oxide, boron oxide, zirconium oxide, titanium oxide, Zinc oxide, strontium oxide, barium oxide,
Hafnium oxide and the like are mentioned, but not limited to these.
【0016】上記酸化物薄膜を透明プラスチック基材表
面に形成するには、真空蒸着法、スパッタ法、イオンプ
レーティングなどのPVD法(物理蒸着法)、CVD法
(化学蒸着法)などが適宜用いられる。例えば、真空蒸
着法においては、蒸着源材料としてSiO2または、S
iと、SiO2、SiOとの混合物、および薄膜に含有
されるべき金属、非金属または半導体、あるいはこれら
の酸化物などが用いられ、抵抗加熱、高周波誘導加熱、
電子ビーム加熱などにより加熱される。この方法におい
て使用される反応性ガスとしては、酸素、窒素、水蒸気
などが挙げられるが、これらのガスを導入する代わり
に、オゾン添加、イオンアシストなどの手段を用いた反
応性蒸着を行ってもよい。この方法においては、本発明
の目的を損なわない限りにおいて、基材にバイアスなど
を加えたり、基材の温度を上昇、あるいは冷却したりし
てもよい。スパッタ法、CVD法などの他の作成法でも
同様に作成条件を変更することができる。To form the above oxide thin film on the surface of the transparent plastic substrate, a vacuum vapor deposition method, a sputtering method, a PVD method (physical vapor deposition method) such as ion plating, a CVD method (chemical vapor deposition method), etc. are appropriately used. To be For example, in the vacuum vapor deposition method, SiO 2 or S is used as the vapor deposition source material.
A mixture of i, SiO 2 , and SiO, and a metal, a nonmetal or a semiconductor to be contained in the thin film, or an oxide thereof is used, and resistance heating, high frequency induction heating,
It is heated by electron beam heating or the like. Examples of the reactive gas used in this method include oxygen, nitrogen, and water vapor. Instead of introducing these gases, it is possible to perform reactive vapor deposition using a means such as ozone addition or ion assist. Good. In this method, as long as the object of the present invention is not impaired, a bias may be applied to the substrate, the temperature of the substrate may be raised, or the substrate may be cooled. The creation conditions can be similarly changed by other creation methods such as the sputtering method and the CVD method.
【0017】上記酸化物薄膜が形成された基材フィルム
は、そのままで被覆用フィルムとして使用されてもよい
が、他の有機高分子のフィルムまたは薄層を、この酸化
物薄膜表面にラミネートまたはコーティングして使用し
てもよい。The base film on which the oxide thin film is formed may be used as it is as a coating film, but a film or thin layer of another organic polymer is laminated or coated on the surface of the oxide thin film. You may use it.
【0018】上記酸化物薄膜の比重は結晶状態の該酸化
物の比重に対し、55〜100%であることがより望ま
しい。薄膜の比重が結晶状態の酸化物の比重に対し、5
5%より小さい場合には、酸化珪素を含む酸化物薄膜の
構造が粗雑となり、充分なガスバリア性が得られない。
薄膜の比重が酸化物の比重に対し100%よりも大きい
薄膜の作製は実用上困難である。以上の理由から被覆用
フィルムとして好ましい酸化物薄膜の比重は、結晶状態
の酸化物の比重に対し、55〜100%であることが好
ましく、65〜100%であることがより好ましい。More preferably, the specific gravity of the oxide thin film is 55 to 100% with respect to the specific gravity of the crystalline oxide. The specific gravity of the thin film is 5 relative to the specific gravity of the crystalline oxide.
If it is less than 5%, the structure of the oxide thin film containing silicon oxide becomes rough and sufficient gas barrier properties cannot be obtained.
It is practically difficult to produce a thin film in which the specific gravity of the thin film is greater than 100% with respect to the specific gravity of the oxide. For the above reasons, the specific gravity of the oxide thin film that is preferable as the coating film is preferably 55 to 100%, and more preferably 65 to 100% with respect to the specific gravity of the oxide in the crystalline state.
【0019】本発明でいう比重とは、ある温度で、ある
体積を占める物質の質量と、それと同体積の標準物質の
質量(4℃における水)との比をいう。比重の測定は、
通常物体の質量と体積を計り、同体積の4℃の水の質量
との比を求めればよいが、本発明においては、薄膜の体
積の測定が困難である。そこで、まず基材から薄膜を剥
すか、あるいは、基材のみを溶解することにより、薄膜
のみからなる単独膜の状態としたのちに、JIS K7
112に従って比重測定を行うことが望ましい。例え
ば、浮沈法では、試料を比重既知の溶液の中に浸漬さ
せ、その浮沈状態から薄膜の比重を測定することができ
る。この溶液としては、四塩化炭素とブロモホルムとの
混合液、四塩化炭素とヨウ化メチレンとの混合液などを
用いることができる。または、連続的な密度勾配をもつ
溶液中に単独膜を浸積させる密度勾配配管法によっても
比重の値を測定できる。The specific gravity referred to in the present invention is the ratio of the mass of a substance occupying a volume at a temperature to the mass of a standard substance having the same volume (water at 4 ° C.). The measurement of specific gravity is
Usually, the mass and volume of an object may be measured and the ratio to the mass of water of the same volume at 4 ° C. may be obtained, but in the present invention, it is difficult to measure the volume of the thin film. Therefore, first, the thin film is peeled from the base material, or only the base material is melted to form a single film made of only the thin film, and then JIS K7 is used.
It is desirable to perform the specific gravity measurement according to 112. For example, in the flotation method, the sample can be dipped in a solution of known specific gravity, and the specific gravity of the thin film can be measured from the floating state. As this solution, a mixed solution of carbon tetrachloride and bromoform, a mixed solution of carbon tetrachloride and methylene iodide, and the like can be used. Alternatively, the specific gravity value can be measured by a density gradient piping method in which a single membrane is immersed in a solution having a continuous density gradient.
【0020】結晶状態の酸化物の比重とは、結晶状態の
酸化物の質量と同体積の標準物質(4℃における水)の
質量の比のことをいい、本発明では結晶状態の固体の酸
化物の比重のことをいう。酸化物によっては、いくつも
の結晶形を有する場合もあるが、常温常圧状態で一般に
存在する結晶の比重を代表とする。例えば酸化珪素で
は、石英の2.65、酸化アルミニウムでは、α−Al
2O3の3.97、酸化マグネシウムでは3.65であ
る。2種以上の酸化物の混合物または化合物(以下、複
合酸化物という)の場合には、単位酸化物の混合物とし
て酸化物の比重は算出される。ここで単位酸化物とは上
記複合酸化物を構成する各酸化物のことである。例え
ば、Al2O3−SiO2複合酸化物の単位酸化物は、A
l2O3およびSiO2であり、ZrO2−MgO−SiO
2複合酸化物の単位酸化物は、ZrO2、MgOおよびS
iO2である。ここで、複合酸化物の比重は単位酸化物
の比重と比率から算出され、単位酸化物の比重をA1、
A2、A3、A4、・・とし、その比率をa1、a2、a3、
a4、・・とすると、複合酸化物の比重Zは Z=A1a1+A2a2+A3a3+A4a4+・・ で表される。The specific gravity of the crystalline oxide is the ratio of the mass of the crystalline oxide to the mass of the standard material (water at 4 ° C.) having the same volume. In the present invention, the oxidation of the crystalline solid is performed. The specific gravity of an object. Depending on the oxide, it may have several crystal forms, but the representative is the specific gravity of crystals that are generally present at room temperature and normal pressure. For example, for silicon oxide, 2.65 for quartz, and for aluminum oxide, α-Al.
It is 3.97 for 2 O 3 and 3.65 for magnesium oxide. In the case of a mixture or compound of two or more kinds of oxides (hereinafter referred to as composite oxide), the specific gravity of the oxide is calculated as a mixture of unit oxides. Here, the unit oxide refers to each oxide forming the above composite oxide. For example, the unit oxide of the Al 2 O 3 —SiO 2 composite oxide is A
L 2 O 3 and SiO 2 , ZrO 2 —MgO—SiO
The unit oxides of the two complex oxides are ZrO 2 , MgO and S.
iO 2 . Here, the specific gravity of the composite oxide is calculated from the specific gravity and the ratio of the unit oxide, and the specific gravity of the unit oxide is A 1 ,
A 2 , A 3 , A 4 , ..., And the ratio is a 1 , a 2 , a 3 ,
a 4, When ..., specific gravity Z of the composite oxide is represented by Z = A 1 a 1 + A 2 a 2 + A 3 a 3 + A 4 a 4 + ··.
【0021】本発明のELパネルを製造するには、ま
ず、上記導電板上にスクリーン印刷、ロールコーティン
グなどにより上記誘電体層を形成し、次いでこの誘電体
層上に同様にして上記蛍光体層を形成する。次に、透明
導電性フィルムの導電面の端部に銀ペーストなどで電極
を印刷し、その後、導電面と上記蛍光体層面をロールラ
ミネートなどにより接着させることにより、透明導電性
フィルムを蛍光体層上に積層する。このようにして得ら
れた積層体の全体を上記被覆用フィルムおよび必要に応
じて防湿フィルムで覆うようにして被覆することにより
ELパネルを得ることができる。To manufacture the EL panel of the present invention, first, the dielectric layer is formed on the conductive plate by screen printing, roll coating or the like, and then the phosphor layer is similarly formed on the dielectric layer. To form. Next, an electrode is printed on the end of the conductive surface of the transparent conductive film with silver paste or the like, and then the conductive surface and the phosphor layer surface are bonded by roll lamination or the like to form the transparent conductive film as the phosphor layer. Stack on top. An EL panel can be obtained by covering the entire laminate thus obtained with the above-mentioned coating film and, if necessary, a moisture-proof film.
【0022】次に実施例をあげて説明する。Next, examples will be described.
【0023】[0023]
【実施例】以下に、本実施例および比較例で用いた測定
方法を示す。EXAMPLES The measurement methods used in this example and comparative examples are shown below.
【0024】(1)輝度 色彩色差計(「ミノルタカメラ(株)」CS−100)
を使用し、ELパネルと測定機との間隔を1.5m、測
定角度を1度、測定時間を1.6秒とし、JIS C
7614に準じて測定した。輝度とは発光面1m2あた
りの光度(cd)であり、1cd/m2=1nitであ
る。単位「nit」は、「nt」と表記される。(1) Luminance color difference meter ("MINOLTA CAMERA CO., LTD. CS-100")
The distance between the EL panel and the measuring instrument is 1.5 m, the measuring angle is 1 degree, and the measuring time is 1.6 seconds.
It measured according to 7614. The brightness is the luminous intensity (cd) per 1 m 2 of the light emitting surface, and 1 cd / m 2 = 1 nit. The unit “nit” is written as “nt”.
【0025】(2)耐久性 70℃(乾燥下)で、500Hz、110VでELパネ
ルを連続発光させ、100時間後、200時間後、およ
び300時間後の輝度を上記の方法で測定し、輝度の低
下を調べた。(2) Durability The EL panel was made to continuously emit light at 70 ° C. (under drying) at 500 Hz and 110 V, and the luminance after 100 hours, 200 hours, and 300 hours was measured by the above method, and the luminance was measured. I checked the decline of.
【0026】(実施例1)片面をアルマイト処理した厚
み100μmのアルミニウム板(「東海アルミ箔」製)
のアルマイト処理面に、誘電体層、蛍光体層および透明
導電性フィルムを順次積層し、積層体を得た。誘電体層
は、ジメチルホルムアミドにシアノレジン(「信越化学
工業」製)を溶解して(25重量%)、バインダを作製
後、このバインダと同重量のチタン酸バリウム(「富士
チタン工業」製、BT−100P)をバインダ中に分散
させ、#200のステンレススクリーンを使用して印刷
した後、120℃で10分間乾燥することにより、アル
ミニウム板のアルマイト処理面に形成された。蛍光体層
は、誘電体層に用いたバインダと同様のバインダ中に同
重量の硫化亜鉛粉末(「シルバニア」製、TYPE81
3)を分散させ、それを上記と同様のステンレススクリ
ーンを用いて誘電体層上に印刷することにより形成され
た。透明導電性フィルム(「東洋紡績」製、300L)
の導電面の端部に銀ペーストで電極を印刷し、その後、
導電面と上記蛍光体層面をロールラミネートにより接着
させることにより、透明導電性フィルムを蛍光体層上に
積層した。ラミネート条件は、ロール温度が180℃で
あり、ラミネート速度が10cm/分であり、そしてラ
ミネート圧力が10kg/cmであった。(Example 1) An aluminum plate having a thickness of 100 μm (made by "Tokai Aluminum Foil") having one surface anodized.
A dielectric layer, a phosphor layer and a transparent conductive film were sequentially laminated on the alumite treated surface of to obtain a laminate. The dielectric layer was prepared by dissolving cyanoresin (manufactured by "Shin-Etsu Chemical Co., Ltd.") in dimethylformamide (25% by weight) to prepare a binder. -100P) was dispersed in a binder, printed using a # 200 stainless screen, and dried at 120 ° C. for 10 minutes to form an alumite-treated surface of an aluminum plate. The phosphor layer was made of the same binder as the binder used for the dielectric layer, and contained the same weight of zinc sulfide powder (manufactured by “Sylvania”, TYPE 81).
3) was dispersed and it was printed on the dielectric layer using the same stainless screen as above. Transparent conductive film ("Toyobo", 300L)
Print the electrodes with silver paste on the edges of the conductive surface of the
A transparent conductive film was laminated on the phosphor layer by bonding the conductive surface and the phosphor layer surface by roll lamination. The laminating conditions were a roll temperature of 180 ° C., a laminating speed of 10 cm / min, and a laminating pressure of 10 kg / cm.
【0027】このようにして得られた積層体を、ポリエ
チレンテレフタレートフィルム(以下、PETフィルム
という)(75μm厚)上にAl2O3−SiO2薄膜を
蒸着した被覆用フィルムを積層し、2枚のEVA系接着
シート(「三井石油化学」製、VE300)でこれをは
さんで加熱圧着して被覆し、ELパネルを得た。The thus obtained laminate was laminated with a coating film obtained by vapor-depositing an Al 2 O 3 —SiO 2 thin film on a polyethylene terephthalate film (hereinafter referred to as PET film) (thickness: 75 μm), and two sheets were formed. This was sandwiched by an EVA-based adhesive sheet (VE300, manufactured by "Mitsui Petrochemical Co., Ltd.") by heating and compression to obtain an EL panel.
【0028】上記被覆用フィルムは、蒸着源としてAl
2O3およびSiO2を用い、電子ビーム蒸着装置によっ
て、厚み75μmのPETフィルムの片面に蒸着するこ
とにより形成した。加熱源として、電子ビーム銃(以
下、EB銃という)を用いて、Al2O3およびSiO2
それぞれを別々に加熱した。そのときのEB銃のエミッ
ション電流は、1.2〜2.0Aとし、そしてAl2O3
およびSiO2の加熱時間の比は30:10として得ら
れる透明薄膜の組成比がAl2O3:SiO2=60:4
0となるようにした。蒸着時の蒸気圧は、3×10-4T
orr〜5×10-3Torrとした。このようにしてP
ETフィルム上に得られた薄膜の厚みは600オングス
トロームであった。この薄膜の比重を基材のPETフィ
ルムを溶解して浮沈法で測定した。その結果、薄膜の比
重は2.68であり、酸化珪素を40%含む結晶状態の
酸化物の比重3.44に対して78%であった。The above coating film is made of Al as a vapor deposition source.
2 O 3 and SiO 2 were formed by vapor deposition on one side of a PET film having a thickness of 75 μm by an electron beam vapor deposition apparatus. An electron beam gun (hereinafter referred to as an EB gun) is used as a heating source, and Al 2 O 3 and SiO 2 are used.
Each was heated separately. The emission current of the EB gun at that time is 1.2 to 2.0 A, and Al 2 O 3 is used.
And the heating time ratio of SiO 2 is 30:10, the composition ratio of the transparent thin film obtained is Al 2 O 3 : SiO 2 = 60: 4.
It was set to 0. Vapor pressure during vapor deposition is 3 × 10 -4 T
orr to 5 × 10 −3 Torr. In this way P
The thickness of the thin film obtained on the ET film was 600 Å. The specific gravity of this thin film was measured by a floatation method by dissolving the PET film as the base material. As a result, the specific gravity of the thin film was 2.68, which was 78% with respect to the specific gravity of 3.44 of the crystalline oxide containing 40% of silicon oxide.
【0029】このようにして得られたELパネルの輝度
の耐久性を測定し、その結果を表1に示す。実施例2〜
4および比較例1〜3の結果も同様に表1に示す。The luminance durability of the EL panel thus obtained was measured, and the results are shown in Table 1. Examples 2 to
The results of No. 4 and Comparative Examples 1 to 3 are also shown in Table 1.
【0030】(実施例2)実施例1と同様にしてELパ
ネルを作製した。ただし、得られた被覆フィルムの薄膜
の比重は1.72であり、酸化珪素を40%含む結晶状
態の酸化物の比重3.44に対して50%であった。こ
のようにして得られたELパネルの輝度の耐久性を測定
した。(Example 2) An EL panel was prepared in the same manner as in Example 1. However, the specific gravity of the thin film of the obtained coating film was 1.72, which was 50% with respect to the specific gravity of 3.44 of the oxide in the crystalline state containing 40% of silicon oxide. The luminance durability of the EL panel thus obtained was measured.
【0031】(実施例3)被覆フィルムの酸化物薄膜を
MgO−SiO2薄膜としたこと以外は、実施例1と同
様にしてELパネルを作製した。上記被覆フィルムは、
蒸着源としてMgOおよびSiO2を用い、電子ビーム
蒸着装置によって、厚み75μmのPETフィルムの片
面に蒸着することにより形成した。加熱源として、EB
銃を用いて、MgOおよびSiO2それぞれを別々に加
熱した。そのときのEB銃のエミッション電流は、1.
1〜1.8Aとし、そしてMgOおよびSiO2の加熱
時間の比は30:10として得られる透明薄膜の組成比
がMgO:SiO2=25:75となるようにした。蒸
着時の蒸気圧は、3×10-4Torr〜5×10-3To
rrとした。このようにしてPETフィルム上に得られ
た薄膜の厚みは400オングストロームであった。この
薄膜の比重を基材のPETフィルムを溶解して浮沈法で
測定した。その結果薄膜の比重は1.97であり、酸化
珪素を75%含む酸化物の比重2.90に対して68%
であった。このようにして得られたELパネルの輝度の
耐久性を測定した。[0031] except that the oxide thin film (Example 3) coated film was MgO-SiO 2 thin film, to produce an EL panel in the same manner as in Example 1. The coating film is
It was formed by vapor deposition on one side of a PET film having a thickness of 75 μm by an electron beam vapor deposition apparatus using MgO and SiO 2 as vapor deposition sources. EB as a heating source
A gun was used to separately heat each of MgO and SiO 2 . The emission current of the EB gun at that time is 1.
1 to 1.8 A, and the heating time ratio of MgO and SiO 2 was 30:10, so that the composition ratio of the obtained transparent thin film was MgO: SiO 2 = 25: 75. Vapor pressure during vapor deposition is 3 × 10 −4 Torr to 5 × 10 −3 To.
rr. The thickness of the thin film thus obtained on the PET film was 400 Å. The specific gravity of this thin film was measured by a floatation method by dissolving the PET film as the base material. As a result, the specific gravity of the thin film was 1.97, which was 68% with respect to the specific gravity of 2.90 of the oxide containing 75% of silicon oxide.
Met. The luminance durability of the EL panel thus obtained was measured.
【0032】(実施例4)実施例3と同様にしてELパ
ネルを作製した。ただし、得られた被覆フィルムの薄膜
の比重は1.45であり、酸化珪素を75%含む酸化物
の比重2.90に対して50%であった。このようにし
て得られたELパネルの輝度の耐久性を測定した。Example 4 An EL panel was prepared in the same manner as in Example 3. However, the specific gravity of the thin film of the obtained coating film was 1.45, which was 50% with respect to the specific gravity of 2.90 of the oxide containing 75% of silicon oxide. The luminance durability of the EL panel thus obtained was measured.
【0033】(比較例1)被覆フィルムおよびEVA系
接着シートにより被覆しなかったこと以外は、実施例1
と同様にして、ELパネルを作製し、得られたELパネ
ルの輝度の耐久性を測定した。表1から明らかなよう
に、得られたELパネルは耐久性が劣っていた。Comparative Example 1 Example 1 except that the coating film and EVA adhesive sheet were not used for coating.
Similarly to the above, an EL panel was prepared, and the durability of luminance of the obtained EL panel was measured. As is clear from Table 1, the durability of the obtained EL panel was poor.
【0034】(比較例2)被覆フィルムおよびEVA系
接着シートの代わりに、三フッ化塩化エチレンフィルム
(「日東電工」製)を以下のような条件で用いて被覆を
行ったこと以外は、実施例1と同様にしてELパネルを
作製した。上記三フッ化塩化エチレンフィルム2枚を、
120℃のプレスで、5kg/cm2、5分間加熱圧着
することにより、積層体の両面に圧着した。得られたE
Lパネルの耐久性を上記方法により測定したところ、3
00時間後でも、30ntと高い輝度を維持していた
が、初期の輝度が上記実施例に比べて劣っており、実用
には適さない。(Comparative Example 2) An experiment was conducted except that a trifluoroethylene chloride film (manufactured by "Nitto Denko") was used under the following conditions instead of the coating film and the EVA adhesive sheet. An EL panel was prepared in the same manner as in Example 1. Two sheets of the above trifluoroethylene chloride film,
It was pressure-bonded to both surfaces of the laminate by heating and pressure-bonding for 5 minutes at 5 kg / cm 2 with a press at 120 ° C. Obtained E
When the durability of the L panel was measured by the above method, it was 3
Even after 00 hours, a high brightness of 30 nt was maintained, but the initial brightness was inferior to that of the above-mentioned examples, and it was not suitable for practical use.
【0035】(比較例3)Al2O3−SiO2薄膜をP
ETフィルム上に蒸着した被覆用フィルムの代わりに、
酸化珪素のみからなる薄膜を以下のようにしてPETフ
ィルム上に蒸着した被覆フィルムを用いたこと以外は実
施例1と同様にしてELパネルを得た。(Comparative Example 3) An Al 2 O 3 --SiO 2 thin film was used as a P
Instead of the coating film deposited on the ET film,
An EL panel was obtained in the same manner as in Example 1 except that a coating film obtained by vapor-depositing a thin film made of only silicon oxide on a PET film was used as follows.
【0036】上記被覆フィルムは、蒸着源としてSiO
を用い、電子ビーム蒸着装置によって、厚み75μmの
PETフィルムの片面に蒸着することにより形成した。
加熱源としては、EB銃を用いた。そのときのEB銃の
エミッション電流は、1.3Aとし、得られる透明薄膜
がSiO1.5となるようにした。蒸着時の蒸気圧は、3
×10-4Torr〜5×10-3Torrとした。このよ
うにしてPETフィルム上に得られた薄膜の厚みは40
0オングストロームであった。得られた被覆フィルムの
薄膜の比重は1.85であり、酸化物の比重2.65に
対して70%であった。得られたELパネルは、初期輝
度および耐久性の結果ともに上記実施例に比べて劣って
いた。The above coating film is made of SiO as a vapor deposition source.
Was formed on one surface of a PET film having a thickness of 75 μm using an electron beam evaporation apparatus.
An EB gun was used as a heating source. The emission current of the EB gun at that time was 1.3 A, and the resulting transparent thin film was SiO 1.5 . Vapor pressure during vapor deposition is 3
It was set to × 10 -4 Torr to 5 × 10 -3 Torr. The thickness of the thin film thus obtained on the PET film was 40.
It was 0 angstrom. The specific gravity of the thin film of the obtained coating film was 1.85, which was 70% with respect to the specific gravity of the oxide of 2.65. The obtained EL panel was inferior to the above examples in both the initial luminance and the durability.
【0037】[0037]
【表1】 [Table 1]
【0038】[0038]
【発明の効果】本発明により、輝度が高く、かつ耐久性
に優れたエレクトロルミネッセンスパネルを提供するこ
とができる。According to the present invention, it is possible to provide an electroluminescence panel having high brightness and excellent durability.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 山口 重次 滋賀県大津市堅田2−1−1 東洋紡績株 式会社フィルム技術センター内 (72)発明者 三宅 英男 大阪府大阪市北区堂島浜2−2−8 東洋 紡績株式会社本社内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Shigeji Yamaguchi 2-1-1 Katata, Otsu City, Shiga Toyobo Co., Ltd. Film Technology Center (72) Inventor Hideo Miyake 2-Dojimahama, Kita Ward, Osaka City, Osaka Prefecture 2-8 Toyo Spinning Co., Ltd. Head Office
Claims (2)
び透明導電性フィルムが順次形成された積層体を含む、
エレクトロルミネッセンスパネルであって、 該積層体が、透明なプラスチック基材の少なくとも片面
に酸化珪素と少なくとも一種の他の酸化物とからなる酸
化物薄膜を有する被覆用フィルムによって、全体が被覆
された、 エレクトロルミネッセンスパネル。1. A laminated body in which a dielectric layer, a phosphor layer, and a transparent conductive film are sequentially formed on a conductive plate,
An electroluminescence panel, wherein the laminate is entirely covered with a coating film having an oxide thin film made of silicon oxide and at least one other oxide on at least one surface of a transparent plastic substrate, Electroluminescence panel.
が、結晶状態の該酸化物の比重に対し55〜100%で
ある、請求項1に記載のエレクトロルミネッセンスパネ
ル。2. The electroluminescence panel according to claim 1, wherein the specific gravity of the oxide thin film of the coating film is 55 to 100% of the specific gravity of the oxide in a crystalline state.
Priority Applications (1)
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JP23377893A JP3277965B2 (en) | 1993-09-20 | 1993-09-20 | Electroluminescence panel |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP23377893A JP3277965B2 (en) | 1993-09-20 | 1993-09-20 | Electroluminescence panel |
Publications (2)
Publication Number | Publication Date |
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JPH0785967A true JPH0785967A (en) | 1995-03-31 |
JP3277965B2 JP3277965B2 (en) | 2002-04-22 |
Family
ID=16960426
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP23377893A Expired - Lifetime JP3277965B2 (en) | 1993-09-20 | 1993-09-20 | Electroluminescence panel |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000058258A (en) * | 1998-07-30 | 2000-02-25 | Hewlett Packard Co <Hp> | Infiltration barrier for organic electroluminescence device |
JP2002260847A (en) * | 2001-02-27 | 2002-09-13 | Bando Chem Ind Ltd | Electroluminescence element sealing film and sealed organic electroluminescence element |
JP2005527076A (en) * | 2002-04-15 | 2005-09-08 | ショット アーゲー | Hermetic sealing of organic electro-optic elements |
JP2012158820A (en) * | 2011-02-02 | 2012-08-23 | Mitsubishi Materials Corp | Method for producing thin film and vapor deposition material for co-vapor deposition for forming thin film, thin film obtained by the method, thin film sheet having the thin film, and laminated sheet |
-
1993
- 1993-09-20 JP JP23377893A patent/JP3277965B2/en not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000058258A (en) * | 1998-07-30 | 2000-02-25 | Hewlett Packard Co <Hp> | Infiltration barrier for organic electroluminescence device |
JP2002260847A (en) * | 2001-02-27 | 2002-09-13 | Bando Chem Ind Ltd | Electroluminescence element sealing film and sealed organic electroluminescence element |
JP2005527076A (en) * | 2002-04-15 | 2005-09-08 | ショット アーゲー | Hermetic sealing of organic electro-optic elements |
JP2012158820A (en) * | 2011-02-02 | 2012-08-23 | Mitsubishi Materials Corp | Method for producing thin film and vapor deposition material for co-vapor deposition for forming thin film, thin film obtained by the method, thin film sheet having the thin film, and laminated sheet |
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