JPH0783124B2 - セルフアライン半導体装置を製造する方法 - Google Patents
セルフアライン半導体装置を製造する方法Info
- Publication number
- JPH0783124B2 JPH0783124B2 JP63500663A JP50066388A JPH0783124B2 JP H0783124 B2 JPH0783124 B2 JP H0783124B2 JP 63500663 A JP63500663 A JP 63500663A JP 50066388 A JP50066388 A JP 50066388A JP H0783124 B2 JPH0783124 B2 JP H0783124B2
- Authority
- JP
- Japan
- Prior art keywords
- window
- protective layer
- substrate
- layer
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 81
- 239000004065 semiconductor Substances 0.000 title claims description 81
- 238000004519 manufacturing process Methods 0.000 title claims description 41
- 239000011241 protective layer Substances 0.000 claims description 239
- 239000000758 substrate Substances 0.000 claims description 142
- 239000010410 layer Substances 0.000 claims description 138
- 238000009792 diffusion process Methods 0.000 claims description 34
- 239000002019 doping agent Substances 0.000 claims description 30
- 150000004767 nitrides Chemical class 0.000 claims description 24
- 229920002120 photoresistant polymer Polymers 0.000 claims description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- 229920005591 polysilicon Polymers 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 13
- 238000002513 implantation Methods 0.000 claims description 13
- 238000000206 photolithography Methods 0.000 claims description 12
- 230000000873 masking effect Effects 0.000 claims description 7
- 238000001465 metallisation Methods 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 238000005553 drilling Methods 0.000 claims 1
- 238000005121 nitriding Methods 0.000 claims 1
- 230000035515 penetration Effects 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 59
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 7
- 239000000969 carrier Substances 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000012212 insulator Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
- H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
- H10D12/031—Manufacture or treatment of IGBTs
- H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0102—Manufacture or treatment of thyristors having built-in components, e.g. thyristor having built-in diode
- H10D84/0105—Manufacture or treatment of thyristors having built-in components, e.g. thyristor having built-in diode the built-in components being field-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US93869386A | 1986-12-05 | 1986-12-05 | |
| US938,693 | 1986-12-05 | ||
| PCT/US1987/003106 WO1988004472A1 (en) | 1986-12-05 | 1987-12-03 | Method of fabricating self aligned semiconductor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63503027A JPS63503027A (ja) | 1988-11-02 |
| JPH0783124B2 true JPH0783124B2 (ja) | 1995-09-06 |
Family
ID=25471812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63500663A Expired - Lifetime JPH0783124B2 (ja) | 1986-12-05 | 1987-12-03 | セルフアライン半導体装置を製造する方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH0783124B2 (enrdf_load_stackoverflow) |
| DE (2) | DE3790800T1 (enrdf_load_stackoverflow) |
| WO (1) | WO1988004472A1 (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0277135A (ja) * | 1988-09-13 | 1990-03-16 | Nec Corp | 半導体装置の製造方法 |
| EP0769811A1 (en) * | 1995-10-19 | 1997-04-23 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe | Method of fabricating self aligned DMOS devices |
| WO2010024237A1 (ja) * | 2008-08-26 | 2010-03-04 | 本田技研工業株式会社 | 接合型半導体装置およびその製造方法 |
| CN111999632B (zh) * | 2019-05-27 | 2023-02-03 | 合肥晶合集成电路股份有限公司 | Pn结样品的获取方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4443931A (en) * | 1982-06-28 | 1984-04-24 | General Electric Company | Method of fabricating a semiconductor device with a base region having a deep portion |
| US4417385A (en) * | 1982-08-09 | 1983-11-29 | General Electric Company | Processes for manufacturing insulated-gate semiconductor devices with integral shorts |
| US4466176A (en) * | 1982-08-09 | 1984-08-21 | General Electric Company | Process for manufacturing insulated-gate semiconductor devices with integral shorts |
-
1987
- 1987-12-03 DE DE19873790800 patent/DE3790800T1/de active Pending
- 1987-12-03 WO PCT/US1987/003106 patent/WO1988004472A1/en active Application Filing
- 1987-12-03 JP JP63500663A patent/JPH0783124B2/ja not_active Expired - Lifetime
- 1987-12-03 DE DE3790800A patent/DE3790800C2/de not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63503027A (ja) | 1988-11-02 |
| DE3790800T1 (enrdf_load_stackoverflow) | 1989-01-19 |
| WO1988004472A1 (en) | 1988-06-16 |
| DE3790800C2 (de) | 1999-08-12 |
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