JPH0782991B2 - Method of growing compound semiconductor single crystal thin film - Google Patents

Description

Description: TECHNICAL FIELD OF THE INVENTION The present invention relates to a compound semiconductor single crystal suitable for epitaxially forming a single crystal growth layer of a III-V compound semiconductor on a semiconductor single crystal substrate in a unit of a single molecular layer. A method for growing a thin film. Particularly, it relates to a method of epitaxially growing a group III-V compound semiconductor single crystal by a surface exchange reaction by introducing at least two kinds of source gases alternately.

[Prior art and its problems]

Conventionally, as a vapor phase epitaxy technique for obtaining a semiconductor thin film crystal, a metal organic vapor phase epitaxy method (hereinafter, referred to as MO-CVD method), a molecular beam epitaxy method (hereinafter, referred to as MBE method), and an atomic layer epitaxy ( Hereinafter referred to as ALE method) is known. However, the MO-CVD method uses III as a source.
The quality of the growth layer is poor because the group and group V elements are simultaneously introduced into the reaction chamber using hydrogen gas as a carrier and grown by thermal decomposition. Further, there are drawbacks such that it is difficult to control the order of monomolecular layer.

On the other hand, the MBE method, which is well known as a crystal growth method using ultra-high vacuum, is inferior to the vapor phase growth method using a chemical reaction because the physical adsorption is the first step. When growing a III-V compound semiconductor such as GaAs,
Group II and V elements are used as sources and the source itself is installed in the growth chamber. Therefore, it is difficult to control the emission gas and evaporation amount obtained by heating the source source, and to replenish the source, and it is difficult to keep the growth rate constant for a long time. Further, the vacuum device such as evacuation of the evaporated material becomes complicated. Furthermore, it is difficult to precisely control the stoichiometric composition (stoichiometry) of compound semiconductors, and as a result,
There is a drawback that high quality crystals cannot be obtained.

In addition, T. Suntola (Tsuomo Soundtrack) is USP for the ALE method.
As described in No. 4058430 (1977) (Japanese Patent Laid-Open No. 51-77589), the MBE method is improved so that each of the semiconductor elements is alternately supplied in a pulsed manner, and the monoatomic layer is alternately arranged on the glass substrate. MBE is a method of growing a thin film atomic layer by atomic layer, which has the advantage of controlling the film thickness on the order of atomic layers.
It is an extension of the law and its crystallinity is not as good as MBE. Also, the grown thin film is limited to II-IV group compound semiconductors such as CdTe and ZnTe, and Si and GaAs, which are currently the mainstay of semiconductor devices such as VLSI, etc.
Has not been successful. III-V compound semiconductors such as GaAs have not been successful, but since the II-VI compound semiconductor has a high vapor pressure of its constituent elements, monoatomic layer adsorption can be realized relatively easily. One of the reasons is that the vapor pressure of the group III element is extremely low in the group compound semiconductor, so that it is difficult to realize the monolayer adsorption condition of the group III element. Although ALE is improved to introduce a gaseous compound molecule on the monoatomic layer and growth utilizing a chemical reaction on the surface is attempted as shown in JP-A-55-130896, ZnS This is growth of a polycrystalline or Ta ₂ O ₅ amorphous thin film and is not a single crystal epitaxial growth technique.

As described above, it is difficult to form a high-quality crystal satisfying the stoichiometric composition on the order of a monolayer by the MO-CVD method or the MBE method, but there is a drawback that a single crystal cannot be obtained by the ALE method. It was Further, in the ALE disclosed in JP-A-55-130896, growth of 1000 Å Ta ₂ O _{5 in} 2500 cycles of gas introduction, 4
For example, growth of 4000 Å ZnS in 500 cycles, or growth of 2200 Å A ₂ lO _{3 in} 2800 cycles, such as gas introduction-cycle, can achieve only growth equivalent to or less than one molecular layer thickness,
Since it is not an epitaxial growth technique having a self-stop function for the thickness of the monomolecular layer, there is a drawback that the film thickness controllability, reproducibility and uniformity are poor. In the above-mentioned ALE, the reaction step in the surface exchange reaction cannot be separated unless an inert gas is used as a gas phase diffusion barrier.
This inert gas has a drawback that it hinders the surface adsorption of the gaseous compound molecules of the raw material.

[Object of the Invention]

The present invention eliminates the above-mentioned drawbacks of the prior art and improves the quality of the crystal growth layer by controlling the stoichiometric composition to form a monolayer or bilayer epitaxial growth film per gas introduction-cycle. Compound semiconductors that can
In particular, it is an object to provide a method for growing a single crystal thin film of a III-V group compound semiconductor.

[Outline of Invention]

Therefore, in the ALE method, one atomic layer of a single element is formed on a glass substrate, whereas in the present invention, a gas of a molecule containing a group III or V component element to be grown on a semiconductor single crystal substrate is used. A single crystal is epitaxially grown on a semiconductor single crystal substrate by repeating the cycle of alternately introducing from the outside. At that time, the pressure in the growth tank, the substrate heating temperature, and the amount of gas to be introduced are 1 cycle 1 molecular layer or 1 cycle Two
We have experimentally found the optimum value for the epitaxial growth of a single crystal of a molecular layer, and formed a single crystal on a semiconductor single crystal substrate.
The feature is that the growth can be performed regardless of the difference in vapor pressure between the group element and the group V element. Further, the present invention irradiates the surface of the semiconductor single crystal substrate with light having a wavelength of 180 to 600 nm to promote surface reactions such as surface migration with the energy of light, so that a high-quality compound semiconductor single crystal can be epitaxially grown at a constant temperature. It is characterized by having done.

Example of Invention

 Examples of the present invention will be described below.

FIG. 1 is a block diagram of a compound semiconductor single crystal growth apparatus according to an embodiment of the present invention, in which 1 is a growth tank and the material is metal such as stainless steel, 2 is a gate valve, 3 is inside the growth tank 1. An exhaust device for evacuating the gas to an ultra-high vacuum, 4,5 are nozzles for introducing a gaseous compound of a group III or V group component element of the III-V group compound semiconductor, and 6, 7 are nozzles 4,5. A valve for opening and closing, 8 is a gaseous compound containing a group III constituent element, 9 is a gaseous compound containing a group V constituent element, 10 is tungsten (W) sealed in quartz glass by a heater for heating the substrate.
A wire is shown with the electric wires omitted, 11 is a thermocouple for temperature measurement, 12 is a single crystal substrate of compound semiconductor, and 13 is a pressure gauge for measuring the degree of vacuum in the growth tank. .

With the above configuration, as a result of examining the crystal growth state using the pressure in the growth tank 1, the heating temperature of the single crystal substrate 12, the amount of gas introduced, etc. as parameters, it was found that high quality single crystal was obtained when the crystal was grown under the following conditions. It was experimentally confirmed that the crystal thin film can be epitaxially formed in the unit of a monolayer. That is, in order to epitaxially grow a GaAs single crystal on the GaAs single crystal substrate 12, first, the gate valve 2 is opened and the inside of the growth tank 1 is set to 10 ⁻⁷ to 10 ⁻⁸ Pascal (hereinafter, Exhaust to about (Pa). Next, the GaAs single crystal substrate 12 is set to 300 to 6
It is heated to 00 ℃ by the heater 10 and TM as a gas containing Ga
G (trimethylgallium) 8 pressure in the growth tank 1 is 10
^-1 to 10 ⁷ Pa, more preferably 10 ^-1 to 10 ^-4 Pa
In this range, the valve 6 is introduced for 0.5 to 10 seconds. Then, after closing the valve 6 to exhaust the gas in the growth tank 1, AsH ₃ (arsine) 9 as a gas containing As will be added in the range where the pressure in the growth tank 1 will be 10 ^-1 to 10 ⁷ Pa. More preferably, the valve 7 is introduced for 2 to 200 seconds in the range of 10 ^-1 to 10 ^-2 Pa. As a result, at least one molecular layer of GaAs can be grown on the GaAs single crystal substrate 12. The lower limit value of gas introduction can be easily determined from the number of molecules for covering the GaAs substrate surface with 100% deposition rate. Since the product of the gas introduction pressure and the gas introduction time gives the number of molecules attached to the GaAs substrate surface, it is necessary to lengthen the introduction time if the introduction pressure is low. By repeating the above operation and growing the monomolecular layers one after another, it is possible to grow a single crystal growth layer of GaAs having a desired number of molecular layers in units of the monomolecular layers.

FIG. 2 (a) shows the growth film thickness of the GaAs film per cycle with the introduction amount of TMG per cycle at a growth temperature of 600 ° C. using TMG and GaAs as the introduced gas. It is a thing. As the amount of TMG introduced per cycle increases, the growth film thickness saturates at the GaAs monolayer or bilayer thickness. Although FIG. 2 (a) shows until just before saturation, even if the introduction amount is further increased by 1 to 2 digits, it is saturated at the thickness of one molecular layer or the thickness of two molecular layers, and becomes a constant thickness. GaAs
The thickness of the monolayer of the (100) plane is 2.83Å, and the thickness of the monolayer of the GaAs (111) plane is 3.26Å. If the amount of gas introduced is equal to or higher than this saturation value, even if the amount of gas introduced, the gas introduction pressure, the GaAs single crystal substrate temperature, etc. fluctuates in a small amount, one cycle one molecular layer or one cycle 2
Since the growth is carried out in the molecular layer with the self-stop function, the film thickness can be controlled in the accuracy of the molecular layer. Since the present invention uses the exchange surface reaction and the surface adsorption reaction on the surface of the substrate, the growth of one cycle of one molecular layer can be realized by using the monomolecular layer adsorption reaction and one cycle of one molecular layer by using the two molecular layer adsorption reaction. it can. For the bilayer adsorption reaction, the gas introduction pressure and the substrate temperature may be set higher than the pressure in the saturation region of the monolayer adsorption reaction. Of course, if the pressure is further increased, multi-molecular layer adsorption of three or more molecular layers will occur, and growth of one-cycle tri-molecular layer or the like is also possible. The higher the substrate temperature, the easier the adsorption of multi-layers. FIG. 2B shows the relationship between the number of times TMG and AsH ₃ were alternately introduced under the saturated condition and the thickness of the GaAs epitaxial growth layer. As is clear from this figure, since it shows very good linearity, it can be seen that any film thickness can be completely controlled. When the epitaxially grown layer of GaAs thus obtained was examined by electron beam diffraction and X-ray diffraction, it was found to be a thin film single crystal with extremely high integrity.

The source gas containing Ga is not limited to TMG, but TEG, D
GaAs thin films with good crystallinity were also obtained by using gases such as EGaCl, DMGaCl, CaCl ₃ , GaBr ₃ , and GaI.

FIG. 3 shows another embodiment of the present invention, which is for adding impurities. 14, 15 are nozzles for introducing gaseous compounds used for impurity addition, 16 and 17 are nozzles 1.
A valve for opening and closing 4,15, 18 is a gaseous compound containing a group II constituent element, and 19 is a gaseous compound containing a group VI constituent element. Since the parts other than the addition of impurities are the same as those of the embodiment shown in FIG. 1, the description thereof will be omitted.

When a p-type growth layer is formed with this structure, TMG (trimethylgallium) 8 and AsH ₃ (arsine) are used as introduction gases.
9 and DMZn (dimethylzinc) 18 as impurity gas to be added
The three gases are introduced in a circulating manner at different times. Another option is to use DMG8 and DMZn18 simultaneously in AsH ₃
9 or alternately introduced into the can dopant by introducing alternating the AsH ₃ 9 and DMZn18 simultaneously TMG8. Furthermore, as another method, TMG and DMZn are simultaneously introduced,
Evacuation, AsH ₃ introduced, a first cycle of evacuation, introducing only TMG, evacuation, by repeating AsH ₃ introduced, and a second cycle of vacuum discharge alternately, Zn
It is also possible to form the doped layers and the undoped layers alternately or alternately in multiple layers.

In addition, as impurity gas, DMCd (dimethyl cadmium),
DMMg (dimethyl magnesium), SiH ₄ (monosilane),
GeH ₄ (German) may be used. Also, DMCd and DMZn may be introduced at the same time.

Next, the n-type growth layer is formed by adding an impurity gas.
DMSe19 (dimethyl selenium) the TMG8, AsH ₃ 9 respectively introduced into the circulating at separate times. Alternatively with TMG8
DMSe19 simultaneously AsH ₃ 9 and DMSe19 may doping by introducing alternately. AsH ₃ 9 and the DMSe19 at the same time, may be introduced alternately and TMG8 and DMSe19.

As the impurity gas at this time, DMS (dimethyl sulfur), H ₂ S (hydrogen sulfide), H ₂ Se (hydrogen selenide), or the like can be used.

In this case, compared with the introduction pressures of the impurity gas in the AsH ₃ 9, TMG8, for example taking small as 10 ^-3 to 10 ^-6, the introduction time is 0.5 to 1
By setting the time to 0 seconds, a molecular layer epitaxial growth layer having a desired impurity concentration distribution in the thickness direction can be formed.
By adjusting the amount and time of the impurity gas to be added, pn junction, non-uniform impurity density distribution, npn, npin, pn
p, bipolar transistor structures such as pnip, npinp, npn ^-
field effect transistor such as np or static induction transistor,
It goes without saying that a pnpn thyristor structure or the like can be realized.

FIG. 4 shows still another embodiment of the present invention,
A mixed crystal compound semiconductor is grown. As a mixed crystal
Ga _1-x Al _x As will be described as an example. Reference numeral 20 is a nozzle for introducing a gaseous compound of Group III Al, 21 is a valve for opening and closing 20, and 22 is a gaseous compound containing Group III Al. 50-52
Will be described later. The other parts are the same as those of the embodiment shown in FIG.

AsH ₃ 8, TMG9, using TMAl22 the (trimethyl aluminum) as an introduction gas, can be introduced AsH ₃ 8, TMG9 and TMAl22 at each substrate temperature 300 to 600 ° C. in a circular fashion at separate times. At this time, the introduction pressure and introduction time of TMAl22 are set to TMG9.
The mixed crystal molecular layer epitaxial growth layer having a desired component ratio in the thickness direction can be formed to have a monomolecular layer thickness or a bimolecular layer thickness per gas introduction cycle by adjusting the above.

Incidentally, TMG9 and TMAl22 may be introduced at the same time. Further, the introduction gas 20 may be a gas in which TMG and TMAl are mixed. Also, G
Taking a _1-x Al _x As as an example, Ga _1-x P _x , In _x Ga _1-x P, In _x Ga
Other III-V group mixed crystals such as _1-x As may be used.

Further, in order to grow the Ga _1-x Al _x As superlattice structure as shown in FIG. 5A, the sequence as shown in FIG. 5B may be used. In other words, the first two cycles are TMG9 and AsH ₃
Alternate introduction with 8; next 5 cycles, alternate introduction of TMAl22 and AsH ₃ 8; next 2 cycles, alternate introduction of TMG 9 and AsH ₃ 8. The next 4 cycles are the cycle of impurity introduction and the nozzle
SiH ₄ (silane) 52 by opening and closing valve 51 using 50
Alternately introduced into and AsH ₃ 8 at the same time as TMG9. That is, valve 5
4 cycles are introduced by matching the opening and closing phases of 1 and valve 6. The next two cycles are the growth of undoped GaAs, TM
Alternating introduction of G9 and AsH ₃ 8, the next two cycles undoped A
in the growth of lAs, it may be the alternate introduction of the TMAl22 and AsH ₃ 8.

FIG. 6 shows still another embodiment of the present invention,
It is intended to grow a mixed crystal compound semiconductor with lattice distortion correction of quaternary mixed crystal or more capable of independently controlling the forbidden band width and the lattice constant. As an example, it is known that when Ga _0.7 Al _0.3 As _0.99 P _0.01 is grown on a GaAs substrate, the lattice distortion is corrected. Therefore, Ga _1-x Al _x As _1-y P _y will be described as an example of a mixed crystal. .

23 and 24 are nozzles for introducing a group III Al containing a liquid crystal element and a group V gaseous compound of P, 25 and 26 are valves for opening and closing the nozzles 23 and 24, 27 and 28 are group III Al, It is a gaseous compound containing an element of p component of group V. Since the other parts are the same as those in FIG. 1, the description thereof will be omitted. AsH as introduced gas
₃ 8, TMG9, using TMAl27, PH ₃ (phosphine) 28, introducing these gases into circulation. At this time, group III comrades, V
Clan comrades may be introduced at the same time. Further, the gas may be mixed in advance. The growth temperature, the growth pressure and the like are almost the same as those in the embodiment shown in FIG. 1, and the lattice distortion-corrected liquid crystal compound semiconductor epitaxial growth layer can be formed by adjusting the gas mixture ratio or the introduction pressure and the introduction time.

In each of the above embodiments, an example in which the heating source for the semiconductor single crystal substrate 12 is provided in the growth tank 1 has been described. For example, as shown in FIG. The lamp house 31 outside the growth tank 1
The semiconductor crystal substrate 12 held in the susceptor 33 may be heated by irradiating the semiconductor single crystal substrate 12 with infrared rays output from the lamp house 31 through the quartz glass 32 provided inside. By doing so, members that are not necessary for growing a single crystal can be removed from the growth tank 1, and generation of unnecessary gas components such as heavy metals due to heating by the heater can be prevented.

An optical system 40 is attached to the growth tank 1, and a light source 41 such as a mercury lamp, a deuterium lamp, an Xe lamp, an excimer laser, and an Ar laser is provided outside the growth system 1, and a semiconductor crystal substrate 12 emits light having a wavelength of 180 to 600 nm. You may make it irradiate. In this case, surface reactions such as surface migration (migration), adsorption / desorption / decomposition of adsorbed molecules can be promoted, and the temperature of the semiconductor single crystal substrate can be lowered. As a result, surface morphology, electrical characteristics, etc. With respect to the above, it becomes possible to epitaxially grow a high quality single crystal. The monomolecular adsorption layer migrates on the surface of the substrate with the energy of light of 180 to 600 nm and is taken into a more stable lattice position, so that a high quality crystal can be obtained.

By the way, in the embodiment described above, a well-known one such as an ion pump can be used as the ultra-high vacuum device. Further, it goes without saying that it is possible to easily add an auxiliary vacuum chamber for loading and unloading the semiconductor single crystal substrate, a crystal pulling-out device, etc., and it is possible to achieve excellent mass productivity.
Although GaAs has been mainly described as the gas used for single crystal growth, it is needless to say that it can be applied to other III-V group compounds such as InP, AlP, InGaAs, and GaP. Further, the single crystal substrate is not limited to GaAs but may be heteroepitaxial growth or the like in which another compound semiconductor single crystal substrate is grown.

〔The invention's effect〕

As described above, according to the present invention, since the raw material gas is introduced only to the surface of the single crystal substrate by using the nozzle, it is adsorbed to the residual gas and the growth tank wall that have spilled over to the extra place, and is desorbed again. Surface exchange reaction can be easily realized with little influence of gas. According to the present invention, since an inert gas such as a carrier gas is not used, the inert gas is adsorbed on the substrate surface and does not inhibit the surface adsorption of the raw material gas, and the raw material gas is adsorbed at a coverage rate of 100%. it can. Further, according to the present invention, since it is possible to epitaxially grow one molecular layer per one gas introduction cycle with a self-stop function, it is possible to use a special film thickness monitor or a precise gas introduction amount only by counting gas introduction cycles. Epitaxial growth of a semiconductor single crystal thin film having a precision capable of counting the number of molecular layers in a single molecular layer unit can be realized without using a control mechanism or the like. Also
Even when the vapor pressure of the group III element is extremely low as in the case of the III-V group compound semiconductor, it is easy to satisfy the stoichiometric composition, and a good quality single crystal can be formed on the semiconductor single crystal substrate. it can. According to the present invention, even if a raw material gas having a large molecular size that causes steric hindrance during surface adsorption such as TMG and TEG is used, the result of the surface reaction is 100% of the surface with the molecular layer.
Since the introduction pressure and the substrate temperature that can be covered are used, there is an advantage that all the source gases used in the MOCVD of the prior art can be applied to the present invention. Further, since the impurities can be added one by one, there is an advantage that a very steep impurity density distribution can be obtained. In particular, since it is possible to control the film thickness of a III-V compound semiconductor thin film such as GaAs with an extremely high accuracy, it is possible to exert an excellent action and effect on the manufacture of very high speed transistors, integrated circuits, diode light emitting elements and the like. Gas introduction according to the invention 1
Since one molecular layer or two molecular layers are epitaxially grown per cycle, a desired film thickness can be obtained in a shorter time and with higher accuracy and reproducibility than the ALE method. According to the present invention, unlike the ALE method based on the MBE method and MBE method, since the source source is not installed inside the growth tank, there is no problem of residual gas or extra emission gas from the source source, It is also easy to operate. According to the present invention, surface reactions such as surface migration are promoted by light irradiation, so that a high-quality single crystal can be obtained at a lower temperature.

[Brief description of drawings]

FIG. 1 is a block diagram of a crystal growth apparatus according to an embodiment of the present invention, and FIG. 2 (a) is a TM per cycle in FIG.
FIG. 2 (b) is a graph showing the relationship between the amount of G introduced and the growth film thickness, FIG. 2 (b) is a graph showing the relationship between the growth tank film thickness and the valve opening / closing number in FIG. 1, FIG. 3 and FIG. FIG. 5 is a configuration diagram of a crystal growth apparatus according to another embodiment of the present invention, FIG. 5 is an explanatory view of forming a superlattice structure using the apparatus of FIG. 4, and FIG. Explanatory drawing, the same figure (b) is a gas introduction sequence diagram, and FIG. 6, FIG. 7 are the block diagrams of the crystal growth apparatus which concerns on another Example of this invention, respectively. 1 ... Growth tank, 2 ... Gate valve, 3 ... Exhaust device,
4,5,14,15,20,23,24 …… Nozzle, 6,7,16,17,21,25,26…
… Valves, 8,9,18,19,22,27,28 …… Gaseous compounds, 10…
… Heater, 11 …… Thermocouple, 12 …… Semiconductor single crystal substrate,
13 ... pressure gauge

 ─────────────────────────────────────────────────── ─── Continuation of the front page (71) Applicant 999999999 Suzuki Sohei 1-3 No. 3 Reijiya, Sendai City, Miyagi Prefecture (72) Inventor Junichi Nishizawa 1-16-16 Yonegabukuro, Sendai City, Miyagi Prefecture (72) Inventor Hitoshi Abe 1-22-11 Midorigaoka, Sendai City, Miyagi Prefecture (72) Inventor Sohei Suzuki No. 1-3 Reijiya, Sendai City, Miyagi Prefecture (56) Reference JP-A-58-98917 (JP, A) JP-A-55- 130896 (JP, A) "Nikkei Electronics", November 9, 1981, P. 86-88

Claims (14)

[Claims] 1. Gaseous compound molecules containing a group III element alone are used at a pressure within the growth tank of 10 ^-1 to 10 ^-7 Pascal to 0.5.
For about 10 seconds, the compound is inserted into the semiconductor single crystal substrate from the outside of the growth tank, the tip is introduced through the first nozzle facing the semiconductor crystal substrate, and after evacuation, only the gaseous compound molecule containing the group V element The pressure in the growth tank is within a range of 10 ^-1 to 10 ^-7 Pascal for 2 to 200 seconds and is inserted from the outside of the growth tank onto the semiconductor single crystal substrate, and the tip is directed onto the semiconductor single crystal substrate. By repeating a series of operations introduced through the second nozzle by heating the semiconductor single crystal substrate to 300 to 600 ° C., a single crystal thin film of a compound semiconductor is formed in a single molecule tank for one cycle of the series of operations. A method for growing a compound semiconductor single crystal thin film, which comprises growing a single crystal thin film of a compound semiconductor having a desired number of molecular layers by repeating the growth in units of thickness and repeating the growth. 2. A method for growing a compound semiconductor single crystal thin film according to claim 1, wherein the semiconductor crystal substrate is irradiated with light having a wavelength of 180 to 600 nm. 3. The method for growing a compound semiconductor single crystal thin film according to claim 1, wherein a single crystal thin film of at least two kinds of compound semiconductors is continuously grown on the semiconductor single crystal substrate. 4. The compound semiconductor according to claim 3, wherein at least one of the two or more kinds of compound semiconductors is GaAs,
The other is Ga _1-x Al _x As compound semiconductor single crystal thin film growth method. 5. The gas molecule according to claim 1, wherein a gas molecule containing an element to be an impurity element of the compound semiconductor is introduced through a third nozzle simultaneously or separately with at least one of the gas compound molecules. By doing so, a method for growing a compound semiconductor single crystal thin film, in which a single crystal thin film of a compound semiconductor having a desired impurity concentration distribution in the thickness direction is continuously grown in units of single molecular layers. 6. The impurity according to claim 1, wherein a gaseous molecule containing an impurity element is introduced at least once in a predetermined repeating cycle simultaneously with at least one of the gaseous compound molecules. A method for growing a compound semiconductor single crystal thin film, wherein a molecular layer containing an element and a molecular layer containing no impurity element are continuously formed periodically. 7. A method for growing a compound semiconductor single crystal thin film according to claim 6, wherein gaseous molecules containing at least two kinds of compound semiconductor impurity elements are introduced. 8. The gas compound molecule according to claim 6, wherein the gaseous compound molecules containing the constituent elements of the compound semiconductor in which at least two or more kinds of compound semiconductor impurity elements are mixed are individually different cycles or the same cycle. A method for growing a compound semiconductor single crystal thin film in which different molecular layers contain different impurity elements by introducing it for different times. 9. The method for growing a compound semiconductor single crystal thin film according to claim 1, wherein the compound semiconductor is GaAs. 10. A claims 9 wherein, TMG as a gaseous compound molecules containing Ga _{element, TEG, DEGaCl, GaBr 3,} G
A method for growing a compound semiconductor single crystal thin film, characterized in that any one of aI ₃ is used and any one of TMAs, AsCl ₃ , AsBr ₃ , and AsH ₃ is used as a gaseous compound molecule containing an As element. 11. The compound semiconductor according to claim 1, wherein the compound semiconductor is a III-V group compound semiconductor crystal thin film containing Al, and TMAl, TEAl, DMACl, A is added to a gaseous compound molecule containing Al.
Using any one of lCl ₃ , AlBr ₃ and AlI ₃ , the gaseous compound molecule containing a component other than Al of the compound semiconductor is introduced into the growth tank at a predetermined pressure for a predetermined time and exhausted simultaneously or separately. A method for growing a compound semiconductor single crystal thin film, characterized in that at least one molecular layer is grown thereby, and a single crystal thin film having a desired number of molecular layers is grown in units of a single molecular layer by repeating the above cycle. 12. The method according to claim 10 or 11, wherein any one of DMZn, DEZn, DECd, DMHg, DEHg and B ₂ H ₆ is used as the gaseous molecule containing the p-type impurity element of the compound semiconductor. Or SiH ₄ , GeH ₄ , SnH ₄ , PbH ₄ , ZnSe, ZnTe, H ₂ S, H _z Se, H ₂ Te as a gaseous molecule containing an n-type impurity element as a component of the compound semiconductor. A compound semiconductor in which a single crystal thin film of the compound semiconductor having a desired impurity concentration distribution in the thickness direction is grown in a unit of a monolayer by being introduced simultaneously or separately with at least one of the gaseous compound molecules containing an element. Single crystal thin film growth method. 13. The gaseous compound molecule according to any one of claims 10, 11 and 12, wherein the gaseous compound molecule contains a component element of the compound semiconductor at least once in each predetermined repeating cycle. Of at least one of the compound semiconductor single crystal thin film periodically forming a molecular layer containing an impurity element and a molecular layer containing no impurity element by introducing a gaseous molecule containing an impurity element of the compound semiconductor. Growth method. 14. The gas compound molecule according to claim 12 or 13, wherein the gaseous compound molecules containing a constituent element of a compound semiconductor in which at least two kinds of impurity elements of a compound semiconductor are mixed are different from each other. A method of growing a compound semiconductor single crystal thin film in which different impurity layers are contained in different molecular layers by introducing the same cycle or different times in the same cycle.