JPH077050A - Contact-bonding method of lead wires - Google Patents
Contact-bonding method of lead wiresInfo
- Publication number
- JPH077050A JPH077050A JP14241693A JP14241693A JPH077050A JP H077050 A JPH077050 A JP H077050A JP 14241693 A JP14241693 A JP 14241693A JP 14241693 A JP14241693 A JP 14241693A JP H077050 A JPH077050 A JP H077050A
- Authority
- JP
- Japan
- Prior art keywords
- crimping
- board
- terminal
- pins
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
Landscapes
- Wire Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明はリードの圧着方法、特
に、多数のピンが垂下するパッケージ基板の上面の導体
端子にリードを圧着させる方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for crimping a lead, and more particularly to a method for crimping a lead to a conductor terminal on the upper surface of a package substrate on which a large number of pins hang down.
【0002】[0002]
【従来の技術】図3は半導体装置の模式断面図であり、
半導体装置1は半導体チップ2をパッケージ3に収容す
る。2. Description of the Related Art FIG. 3 is a schematic sectional view of a semiconductor device.
The semiconductor device 1 accommodates the semiconductor chip 2 in the package 3.
【0003】パッケージ3は、多数のピン6が整列し垂
下する絶縁基板4にキャップ5を接着してなり、バンプ
7を介してインナーが半導体チップ2に接続する多数の
リード8のアウターは、基板4の上面に形成し所定のピ
ン6に連通する導体端子9のそれぞれに圧着する。The package 3 is formed by adhering a cap 5 to an insulating substrate 4 on which a large number of pins 6 are aligned and hanging down, and the outer of a large number of leads 8 whose inners are connected to the semiconductor chip 2 via bumps 7 are the substrate. 4 is crimped to each of the conductor terminals 9 which are formed on the upper surface of 4 and communicate with predetermined pins 6.
【0004】リード8と端子9との圧着は、一般に金属
製のボンディングステージにパッケージ基板4を搭載
し、基板4の上にリード8のインナーを接続した半導体
チップ2を搭載し、リード8の位置決めを行ったのち、
加熱したボンディングツールにてリード8のアウターを
端子9に押圧し、ボンディングツールの押圧力は、ボン
ディングステージに当接するピン6で受ける。The crimping of the lead 8 and the terminal 9 is carried out by mounting the package substrate 4 on a metal bonding stage, mounting the semiconductor chip 2 to which the inner portion of the lead 8 is connected on the substrate 4, and positioning the lead 8. After doing
The outer side of the lead 8 is pressed against the terminal 9 by the heated bonding tool, and the pressing force of the bonding tool is received by the pin 6 that contacts the bonding stage.
【0005】[0005]
【発明が解決しようとする課題】図4は圧着時の押圧力
が不均一なることの説明図(その1)、図5は圧着時の
押圧力が不均一なることの説明図(その2)である。FIG. 4 is an explanatory view (1) of uneven pressing force during crimping, and FIG. 5 is an explanatory view (2) of uneven pressing force during crimping. Is.
【0006】図3を用いて説明した半導体装置1におい
て、パッケージ基板4の下面より突出する多数のピン6
の長さは、ばらつきの生じることが不可避である。従っ
て、図4に示すように基板4をボンディングステージ10
に搭載したとき、ピン6の長さにばらつきがあると基板
4が傾くようになり、ボンディングツール11による押圧
力に不均一が発生する。In the semiconductor device 1 described with reference to FIG. 3, a large number of pins 6 projecting from the lower surface of the package substrate 4
It is unavoidable that there will be variations in the length. Therefore, as shown in FIG.
When the pins 6 are mounted on the substrate 6, if the lengths of the pins 6 vary, the substrate 4 tilts, and the pressing force of the bonding tool 11 becomes nonuniform.
【0007】その結果、押圧力が不足したリード8の圧
着力が低下すると共に、押圧力が過大となったリード8
の機械的強度が低下する。さらに、図3を用いて説明し
た半導体装置1において、パッケージ基板4の上面,特
にセラミックにてなる基板4の上面には多少のうねりが
あると共に、図4に示すようにボンディングツール11の
下面(リード8を端子9に押圧させる面)は、ツール11
を 500℃程度に加熱するため凹状に熱変形する。As a result, the crimping force of the lead 8 whose pressing force is insufficient is reduced and the lead 8 whose pressing force is excessively large.
Mechanical strength is reduced. Further, in the semiconductor device 1 described with reference to FIG. 3, the upper surface of the package substrate 4, particularly the upper surface of the substrate 4 made of ceramic has some undulations, and as shown in FIG. The surface that presses the lead 8 against the terminal 9) is the tool 11
Since it is heated to about 500 ℃, it deforms into a concave shape.
【0008】従って、例えば図5に示すように基板4の
上面およびツール11の下面が共に凹状のとき、リード8
と端子9との押圧力は、リード8および端子9の整列方
向の端部では押圧力が過大となり、該整列方向の中央部
では押圧力が過少となり易く、圧着力不足,機械的強度
低下による接続の信頼性が低下する。Therefore, for example, when the upper surface of the substrate 4 and the lower surface of the tool 11 are both concave as shown in FIG.
As for the pressing force between the terminal 9 and the terminal 9, the pressing force becomes excessive at the ends of the leads 8 and the terminals 9 in the alignment direction, and the pressing force tends to be too small at the central portion in the alignment direction, resulting in insufficient crimping force and reduced mechanical strength. Connection reliability is reduced.
【0009】従って、上面が熱変形したステージ10と先
端面が熱変形したツール11とを使用したリード8の圧着
では、整列端のリード8に対しその列の中央部に位置す
るリード2の押圧力が低下し、押圧力が不足したリード
8の圧着力が低下するようになる。Therefore, in the crimping of the leads 8 using the stage 10 whose upper surface is thermally deformed and the tool 11 whose distal end surface is thermally deformed, the leads 2 located at the center of the row are pressed against the leads 8 at the aligned end. The pressure is reduced, and the crimping force of the lead 8 having insufficient pressing force is reduced.
【0010】なお、ピン6の長さのばらつき対策とし
て、セラミック等にてなるキャリアを利用する方法があ
る。しかし、基板4の下面が当接するようになる圧着用
キャリアは、基板4の下面精度の影響を受けると共に、
キャリアの熱変形の影響も受けるため、非実用的であっ
た。As a measure against the variation in the length of the pin 6, there is a method of using a carrier made of ceramic or the like. However, the pressure-bonding carrier that comes into contact with the lower surface of the substrate 4 is affected by the accuracy of the lower surface of the substrate 4, and
It was impractical because it was also affected by thermal deformation of the carrier.
【0011】[0011]
【課題を解決するための手段】本発明方法の第1の手段
は、その実施例を示す図1(イ) によれば、多数の端子ピ
ン6が垂下する絶縁基板4の上面にはそれぞれの端子ピ
ン6に連通する多数の導体端子9を形成し、端子9に重
ねた導体リード8を圧着ツール11にて端子9に圧着せし
めるのに際し、端子ピン6の先端が当接する緩衝部材21
を圧着用ステージ10の上面に搭載し、圧着時の押圧力を
端子ピン6の先端が突入しかつ貫通しない緩衝材の板状
である緩衝部材21で受けさせる。The first means of the method according to the present invention is shown in FIG. 1 (a) showing an embodiment thereof, in which the upper surface of the insulating substrate 4 on which a large number of terminal pins 6 hang down is different from each other. A large number of conductor terminals 9 communicating with the terminal pins 6 are formed, and when the conductor leads 8 stacked on the terminals 9 are crimped to the terminals 9 with a crimping tool 11, the buffer members 21 with which the tips of the terminal pins 6 come into contact.
Is mounted on the upper surface of the crimping stage 10, and the pressing force at the time of crimping is received by the cushioning member 21 which is a plate-like cushioning material into which the tips of the terminal pins 6 project and do not penetrate.
【0012】本発明方法の第2の手段は、その実施例を
示す図1(ロ) によれば、導体端子9の上に金属バンプ22
を形成せしめ、バンプ22にリード8を圧着させる。さら
に、本発明方法の第1の手段の応用例は、その実施例を
示す図2によればテープ状の緩衝部材23を使用し、リー
ド8を導体端子9に圧着させる圧着動作時に停止し,そ
の圧着動作終了時に走行するようにテープ状緩衝部材23
をその長さ方向に間欠走行させる。The second means of the method according to the present invention is shown in FIG.
Then, the leads 8 are pressure-bonded to the bumps 22. Further, the application example of the first means of the method of the present invention is such that according to FIG. 2 showing the embodiment, the tape-like buffer member 23 is used, and the lead 8 is stopped during the crimping operation of crimping the lead 8 to the conductor terminal 9, The tape-shaped cushioning member 23 so that the tape-shaped cushioning member 23 runs at the end of the crimping operation.
Run intermittently in its length direction.
【0013】[0013]
【作用】前記第1の手段によれば、端子ピン6の長さの
ばらつきを緩衝部材21が吸収し、基板4の傾斜をなく
す。従って、端子ピン6の長さのばらつきによる圧着力
の不均一をなくし、リード8と端子9の均一な圧着を可
能にする。According to the first means, the buffer member 21 absorbs the variation in the length of the terminal pin 6 to eliminate the inclination of the substrate 4. Therefore, the unevenness of the crimping force due to the variation in the length of the terminal pin 6 is eliminated, and the lead 8 and the terminal 9 can be crimped uniformly.
【0014】前記第2の手段によれば、基板4の上面の
変形および圧着ツール11の下面(リード押圧面)の変形
を、バンプ22が吸収することになる。従って、基板4の
上面およびツール11の下面の変形に伴う圧着力の不均一
をなくし、リード8と端子9の均一な圧着を可能にす
る。According to the second means, the bumps 22 absorb the deformation of the upper surface of the substrate 4 and the deformation of the lower surface (lead pressing surface) of the pressure bonding tool 11. Therefore, the unevenness of the crimping force due to the deformation of the upper surface of the substrate 4 and the lower surface of the tool 11 is eliminated, and the uniform crimping of the leads 8 and the terminals 9 is enabled.
【0015】さらに、前記第1の手段の応用としてテー
プ状緩衝部材23を使用し、その部材23を走行させること
により、第1の手段において使用し端子ピン6の先端部
が突入することで傷つけられる緩衝部材21の交換が不要
になる。Further, as an application of the first means, a tape-shaped cushioning member 23 is used, and by running the member 23, the tip portion of the terminal pin 6 used in the first means is pierced and damaged. It is not necessary to replace the buffer member 21 that is provided.
【0016】[0016]
【実施例】図1は本発明方法の実施例の説明図、図2は
緩衝材テープを使用した本発明方法の説明図である。1 is an explanatory view of an embodiment of the method of the present invention, and FIG. 2 is an explanatory view of the method of the present invention using a buffer tape.
【0017】前出図と共通部分に同一符号を使用した図
1(イ) において、本発明方法の第1の実施例は、ボンデ
ィングステージ10に緩衝板21を搭載し、緩衝板21の上に
パッケージ基板4を搭載し、パッケージ基板4の上にリ
ード8のインナーを接続した半導体チップ2を搭載し、
リード8のアウターを基板4上の端子9に圧着させる。In FIG. 1A, in which the same reference numerals are used for the same parts as in the above-mentioned drawing, the first embodiment of the method of the present invention is to mount a buffer plate 21 on the bonding stage 10 and place it on the buffer plate 21. The package substrate 4 is mounted, and the semiconductor chip 2 to which the inner of the lead 8 is connected is mounted on the package substrate 4,
The outer of the lead 8 is crimped to the terminal 9 on the substrate 4.
【0018】ボンディングツール11がリード8のアウタ
ーを押圧する押圧力によって基板4より垂下する多数の
ピン6の先端が突入し、ピン6の長さのばらつきを吸収
すると共に、ボンディングツール11の押下力に対しピン
6が貫通しない緩衝板21には、例えば硬質ゴム,中・軟
質のプラスチック等を利用する。Due to the pressing force of the bonding tool 11 pressing the outer of the lead 8, the tips of a large number of pins 6 that hang down from the substrate 4 project to absorb the variations in the length of the pins 6 and the pressing force of the bonding tool 11. On the other hand, for the buffer plate 21 through which the pin 6 does not penetrate, for example, hard rubber, medium / soft plastic, or the like is used.
【0019】従って、長いピン6は短いピン6より深く
緩衝板21に突入するようになり、そのことによって基板
4の上面はツール11の下面に平行し、多数のリード8と
端子9との圧着が均一になる。Therefore, the long pin 6 penetrates into the buffer plate 21 more deeply than the short pin 6, whereby the upper surface of the substrate 4 is parallel to the lower surface of the tool 11, and the leads 8 and terminals 9 are crimped. Becomes uniform.
【0020】前出図と共通部分に同一符号を使用した図
1(ロ) において、本発明方法の第2の実施例は、ボンデ
ィングステージ10に緩衝板21を搭載し、端子9の上に金
属バンプ22を形成したパッケージ基板4を緩衝板21の上
に搭載し、バンプ22にリード8のアウターが重なるよう
に半導体チップ2を基板4の上に搭載し、ボンディング
ツール11を使用してリード8のアウターを端子9に圧着
させる。In the second embodiment of the method of the present invention, a buffer plate 21 is mounted on the bonding stage 10 and a metal is provided on the terminal 9 in FIG. The package substrate 4 having the bumps 22 formed thereon is mounted on the buffer plate 21, the semiconductor chip 2 is mounted on the substrate 4 so that the outer portions of the leads 8 overlap the bumps 22, and the leads 8 are formed by using the bonding tool 11. The outer of is crimped to the terminal 9.
【0021】かかる圧着方法は、多数のピン6の長さの
ばらつきを緩衝板21が吸収し、基板4の上面の変形およ
びツール11の下面の変形をバンプ22が吸収し、そのこと
によって多数のリード8と端子9との圧着は、前記本発
明方法の第1の実施例よりも一層均一になる。In this crimping method, the buffer plate 21 absorbs variations in the lengths of many pins 6, and the bumps 22 absorb the deformation of the upper surface of the substrate 4 and the deformation of the lower surface of the tool 11. The crimping of the lead 8 and the terminal 9 becomes more uniform than in the first embodiment of the method of the present invention.
【0022】前出図と共通部分に同一符号を使用した図
2において、本発明方法の第3の実施例は、前記緩衝板
21に替えて緩衝板21と同種の緩衝材にてなる緩衝テープ
23を使用する。In FIG. 2 in which the same reference numerals are used for the same parts as in the above-mentioned drawing, the third embodiment of the method of the present invention is the buffer plate described above.
Buffer tape made of the same type of buffer material as buffer plate 21 instead of 21
Use 23.
【0023】繰り出し用リール24に巻回された緩衝テー
プ23は、例えばボンディングツール11の上下動と共に所
定量 (基板4の長さと同量)だけボンディングステージ
10の上を通って走行し、巻き取り用リール25に巻き取ら
れる。The buffer tape 23 wound around the feeding reel 24 is moved by a predetermined amount (the same amount as the length of the substrate 4) along with the vertical movement of the bonding tool 11.
It travels over 10 and is taken up by take-up reel 25.
【0024】このように緩衝テープ23を使用した圧着方
法は、圧着作業によって多数のピン6の先端部が突入す
ることで損傷する緩衝板21の交換を不要とし、圧着に対
する信頼性および生産性の向上に寄与する。As described above, the crimping method using the buffer tape 23 does not require replacement of the buffer plate 21, which is damaged by the tip of a large number of pins 6 protruding by the crimping work, and thus the reliability and productivity of crimping are improved. Contribute to improvement.
【0025】[0025]
【発明の効果】以上説明したように本発明方法によれ
ば、リードの圧着を均一化せしめ、そのことでリードの
電気的, 機械的接続に対する信頼性が向上し、圧着不良
による歩留りを低減させた効果がある。As described above, according to the method of the present invention, the crimping of the leads is made uniform, which improves the reliability of the electrical and mechanical connection of the leads and reduces the yield due to the crimping failure. There is an effect.
【図1】 本発明方法の実施例の説明図FIG. 1 is an explanatory diagram of an embodiment of the method of the present invention.
【図2】 緩衝材テープを使用した本発明方法の説明図FIG. 2 is an explanatory view of the method of the present invention using a buffer tape.
【図3】 半導体装置の模式断面図FIG. 3 is a schematic cross-sectional view of a semiconductor device
【図4】 圧着時の押圧力が不均一なることの説明図
(その1)FIG. 4 is an explanatory view (1) of uneven pressing force during crimping.
【図5】 圧着時の押圧力が不均一なることの説明図
(その2)FIG. 5 is an explanatory view (2) of uneven pressing force during crimping.
2は導体端子に圧着される導体リード 4は絶縁基板 6は絶縁基板より垂下する端子ピン 9は絶縁基板の上面の導体端子 10は圧着用ステージ 11は圧着ツール 21,23 は緩衝部材 22は金属バンプ 2 is a conductor lead to be crimped to a conductor terminal 4 is an insulating substrate 6 is a terminal pin hanging from the insulating substrate 9 is a conductor terminal on the upper surface of the insulating substrate 10 is a crimping stage 11 is a crimping tool 21,23 is a buffer member 22 is metal bump
Claims (3)
(4) の上面にはそれぞれの該端子ピンに連通する多数の
導体端子(9) を形成し、該端子に重ねた導体リード(8)
を圧着ツール(11)にて該端子に圧着せしめるのに際し、
該端子ピンの先端が当接する緩衝部材(21,23) を圧着用
ステージ(10)の上面に搭載し、該圧着時の押圧力を該多
数の端子ピンの先端が貫通することなく突入する該緩衝
部材で受けせしめることを特徴とするリードの圧着方
法。1. An insulating substrate having a large number of terminal pins (6) depending on it.
A large number of conductor terminals (9) communicating with the terminal pins are formed on the upper surface of (4), and conductor leads (8) are stacked on the terminals.
When crimping the terminal with the crimping tool (11),
A buffer member (21, 23) with which the tips of the terminal pins abut is mounted on the upper surface of the crimping stage (10), and the pressing force at the time of crimping is projected without the tips of the many terminal pins penetrating. A method for crimping a lead, characterized in that it is received by a cushioning member.
記リード(8) を前記導体端子(9) に圧着させる圧着動作
時に停止し,その圧着動作終了時に走行するように該テ
ープ状緩衝部材をその長さ方向に間欠走行せしめること
を特徴とする請求項1記載のリードの圧着方法。2. The buffer member (23) is in the form of a tape, and the lead (8) is stopped during the crimping operation of crimping the conductor terminal (9), and the tape-like member is run at the end of the crimping operation. 2. The lead crimping method according to claim 1, wherein the cushioning member is intermittently run in its length direction.
を形成せしめ、前記緩衝部材(21,23) を使用して該バン
プに前記リード(8) を圧着せしめることを特徴とする請
求項1記載のリードの圧着方法。3. Metal bumps (22) on the conductor terminals (9)
2. The method for crimping the leads according to claim 1, wherein the bumps (21, 23) are used to crimp the leads (8) to the bumps.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14241693A JPH077050A (en) | 1993-06-15 | 1993-06-15 | Contact-bonding method of lead wires |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14241693A JPH077050A (en) | 1993-06-15 | 1993-06-15 | Contact-bonding method of lead wires |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH077050A true JPH077050A (en) | 1995-01-10 |
Family
ID=15314828
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14241693A Withdrawn JPH077050A (en) | 1993-06-15 | 1993-06-15 | Contact-bonding method of lead wires |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH077050A (en) |
-
1993
- 1993-06-15 JP JP14241693A patent/JPH077050A/en not_active Withdrawn
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