JPH0765626A - Dielectric ceramic composition - Google Patents
Dielectric ceramic compositionInfo
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- JPH0765626A JPH0765626A JP5238709A JP23870993A JPH0765626A JP H0765626 A JPH0765626 A JP H0765626A JP 5238709 A JP5238709 A JP 5238709A JP 23870993 A JP23870993 A JP 23870993A JP H0765626 A JPH0765626 A JP H0765626A
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、１ＭＨｚのような高い
周波数領域において誘電体損失が小さい誘電体磁器組成
物に関する。FIELD OF THE INVENTION The present invention relates to a dielectric ceramic composition having a small dielectric loss in a high frequency region such as 1 MHz.
【０００２】[0002]
【従来の技術】比較的高い誘電率（例えば２４００程
度）を有し、且つ誘電率の温度変化率が−２５〜＋８５
℃で±１０％以内の誘電体磁器組成物として、ＢａＴｉ
Ｏ3 にＢｉ2 Ｏ3 、ＳｎＯ2 、ＳｒＴｉＯ3 、ＣａＴｉ
Ｏ3 等を添加したものが知られている。2. Description of the Related Art A relatively high dielectric constant (for example, about 2400) and a temperature change rate of the dielectric constant of -25 to +85.
BaTi as a dielectric ceramic composition within ± 10% at ℃
O 3 to Bi 2 O 3, SnO 2, SrTiO 3, CaTi
It is known that O 3 or the like is added.
【０００３】[0003]
【発明が解決しようとする課題】ところで、上述のよう
な従来の誘電体磁器組成物の１ｋＨｚでの誘電損失（ta
n δ）は比較的低く例えば０．７８％であるが、１ＭＨ
ｚでの誘電損失は例えば５．２２％のように高い。従っ
て、従来の誘電体磁器を高い周波数領域で使用する場合
には、誘電損失に基づいて発生した熱の放散を考慮して
寸法又は形状を決定しなければならず、設計上の自由度
が小さかった。By the way, the dielectric loss (ta) at 1 kHz of the conventional dielectric ceramic composition as described above is as follows.
n δ) is relatively low, for example 0.78%, but 1 MH
The dielectric loss at z is high, for example 5.22%. Therefore, when the conventional dielectric porcelain is used in a high frequency region, it is necessary to determine the size or shape in consideration of the heat dissipation generated based on the dielectric loss, and the degree of freedom in design is small. It was
【０００４】そこで、本発明の目的は高い周波数領域に
おいて誘電損失が比較的小さいチタン酸バリウム系誘電
体磁器組成物を提供することにある。Therefore, an object of the present invention is to provide a barium titanate-based dielectric ceramic composition having a relatively small dielectric loss in a high frequency region.
【０００５】[0005]
【課題を解決するための手段】上記目的を達成するため
の本発明は、９７．５５〜９７．９０重量％のチタン酸
バリウムと、１．８０〜２．１０重量％のニオブ酸化物
と、０．１０〜０．２５重量％のマグネシウム酸化物
と、０．１５〜０．３０重量％のチタン酸化物とから成
る誘電体磁器組成物に係わるものである。The present invention for attaining the above object comprises: 97.55 to 97.90% by weight of barium titanate; 1.80 to 2.10% by weight of niobium oxide; It relates to a dielectric ceramic composition comprising 0.10 to 0.25% by weight of magnesium oxide and 0.15 to 0.30% by weight of titanium oxide.
【０００６】[0006]
【発明の作用及び効果】本発明によれば、１ＭＨｚにお
いて、比誘電率εが２０００以上、誘電損失tan δが３
％以下、１ｋＨｚにおける比誘電率εが２４００以上、
tan δが２％以下、−２５℃及び＋８５℃における比誘
電率の変化率が±１０％以内のチタン酸バリウム系誘電
体磁器組成物を提供することができる。従って、本発明
の磁器組成物は高い周波数領域で使用される磁器コンデ
ンサ等の回路素子の材料として好適である。According to the present invention, the relative permittivity ε is 2000 or more and the dielectric loss tan δ is 3 at 1 MHz.
% Or less, relative permittivity ε at 1 kHz is 2400 or more,
It is possible to provide a barium titanate-based dielectric ceramic composition having a tan δ of 2% or less and a rate of change in relative dielectric constant at −25 ° C. and + 85 ° C. of ± 10% or less. Therefore, the porcelain composition of the present invention is suitable as a material for circuit elements such as porcelain capacitors used in a high frequency range.
【０００７】[0007]
【実施例】次に、本発明の実施例及び比較例を説明す
る。EXAMPLES Next, examples and comparative examples of the present invention will be described.
【０００８】表１に示す１２種類の組成の試料を得るた
めに、 ＢａＴｉＯ3 （チタン酸バリウム）と Ｎｂ2 Ｏ5 （酸化ニオブ）と ＭｇＯ（酸化マグネシウム）と ＴｉＯ2 （酸化チタン）とを用意した。In order to obtain samples of 12 kinds of compositions shown in Table 1, BaTiO 3 (barium titanate), Nb 2 O 5 (niobium oxide), MgO (magnesium oxide) and TiO 2 (titanium oxide) were prepared. did.
【０００９】[0009]
【表１】 [Table 1]
【００１０】今、試料NO．１について詳しく説明する
と、まず、 ＢａＴｉＯ3 ９７．７５重量％ Ｎｂ2 Ｏ5 １．９５重量％ ＭｇＯ ０．１５重量％ ＴｉＯ2 ０．１５重量％ の組成になるように各原料を秤量し、これ等をポリエチ
レン製ポットミルへ入れ、直径１０ｍｍのジルコニアボ
ールを用いて１５時間の湿式混合及び粉砕を行い、これ
を乾燥して混合物を得た。得られた混合物にポリビニル
アルコール系バインダーを５重量％加え、６０メッシュ
のふるいを通して造粒及び整粒し、乾燥させ、油圧プレ
スにて１ｃｍ2 当り１０００ｋｇの圧力で直径１６．５
ｍｍ、厚み０．７５ｍｍの円板に成形した。この成形物
をジルコニア質の鞘に入れ、大気中で１４００℃の温度
で２時間焼成して、円板状磁器を得た。次に、図１に示
すように得られた磁器１２の両主面に銀ペーストを塗布
して８００℃で焼き付けることによって一対の電極１
４、１６を形成し、磁器コンデンサ１０を完成させた。Now, the sample No. 1 will be described in detail. First, each raw material was weighed so that the composition was BaTiO 3 97.75% by weight Nb 2 O 5 1.95% by weight MgO 0.15% by weight TiO 2 0.15% by weight. Etc. were placed in a polyethylene pot mill, and wet mixing and pulverization were performed for 15 hours using a zirconia ball having a diameter of 10 mm, and this was dried to obtain a mixture. To the obtained mixture, 5% by weight of polyvinyl alcohol-based binder was added, which was granulated and sized through a 60-mesh sieve, dried, and hydraulically pressed at a pressure of 1000 kg / cm 2 to a diameter of 16.5.
mm, and a 0.75 mm thick disk was formed. This molded product was placed in a zirconia-based sheath and fired in the atmosphere at a temperature of 1400 ° C. for 2 hours to obtain a disk-shaped porcelain. Next, as shown in FIG. 1, a silver paste is applied to both main surfaces of the porcelain 12 and baked at 800 ° C. to form a pair of electrodes 1.
4 and 16 were formed, and the porcelain capacitor 10 was completed.
【００１１】次に、完成した磁器コンデンサ１０の１ｋ
Ｈｚにおける比誘電率εと、誘電損失tan δと、２０℃
の比誘電率に対する−２５℃及び＋８５℃の比誘電率の
変化率△ε-25 、△ε+85 を求めた。また、１ＭＨｚに
おける比誘電率εとtan δも測定した。この結果、試料
NO．１においては、１ｋＨｚでのεが２６９１、tanδ
が１．４０％、△ε-25 が−２．３４、△ε+85 が−
８．４１であり、１ＭＨｚでのεが２４７７、tan δが
２．５９であった。なお、−２５℃と＋８５℃との間の
種々の温度における比誘電率の変化率も求めたが、−２
５℃及び＋８５℃の時の値からはみ出すことはなかっ
た。Next, 1k of the completed porcelain capacitor 10
Relative permittivity ε at Hz, dielectric loss tan δ, 20 ° C
The change rates Δε -25 and Δε +85 of the relative permittivity at −25 ° C. and + 85 ° C. with respect to the relative permittivity of were obtained. The relative permittivity ε and tan δ at 1 MHz were also measured. As a result, the sample
NO. In No. 1, ε at 1 kHz is 2691, tan δ
Is 1.40%, Δε -25 is -2.34, Δε +85 is −
It was 8.41, ε at 1 MHz was 2477, and tan δ was 2.59. The rate of change of the relative permittivity at various temperatures between -25 ° C and + 85 ° C was also calculated.
It did not protrude from the values at 5 ° C and + 85 ° C.
【００１２】試料NO．２〜１２についても試料NO．１と
同一の方法で磁器コンデンサ素子を作り、ε、tan δ、
△ε-25 、△ε+85 を同様に測定した。表２は試料NO．
１〜１２の測定結果を示す。Sample No. Sample Nos. Make a porcelain capacitor element in the same way as in 1, and set ε, tan δ,
Δε -25 and Δε +85 were measured in the same manner. Table 2 shows sample No.
The measurement results of 1 to 12 are shown.
【００１３】[0013]
【表２】 [Table 2]
【００１４】本発明に係わる磁器組成物と従来のＢａＴ
ｉＯ3 系磁器組成物との比較を行うために、 ＢａＴｉＯ3 ６９．０ 重量％ ＰｂＴｉＯ3 １８．０ 重量％ Ｂｉ2 Ｏ3 ５．５ 重量％ ＳｎＯ2 ５．３ 重量％ Ｌａ2 Ｏ3 ２．２ 重量％ の組成の磁器材料を用意し、試料NO．１と実質的に同一
の方法で磁器コンデンサ素子を作り、同様に特性を測定
したところ、１ｋＨｚでのεは２４８４、tan δは０．
７８、△ε-25 は＋２．０１、△ε+85 は−８．７０で
あり、１ＭＨｚをでのεは２２８７、tan δは５．２２
であった。The porcelain composition according to the present invention and the conventional BaT
For comparison with the iO 3 -based porcelain composition, BaTiO 3 69.0 wt% PbTiO 3 18.0 wt% Bi 2 O 3 5.5 wt% SnO 2 5.3 wt% La 2 O 3 2. A porcelain material having a composition of 2% by weight was prepared, and sample NO. A porcelain capacitor element was manufactured by the substantially same method as in Example 1 and the characteristics were measured in the same manner. As a result, ε at 1 kHz was 2484 and tan δ was 0.
78, Δε -25 is +2.01, Δε +85 is −8.70, and ε at 1 MHz is 2287 and tan δ is 5.22.
Met.
【００１５】本発明は従来のＢａＴｉＯ3 系磁器組成物
と高い周波数（１ＭＨｚ）におけるtan δの改善を目的
としている。従って、本発明における良品基準を、１ｋ
Ｈｚでのεが２４００以上、１ｋＨｚでのtan δが３％
以下、１ｋＨｚでの△ε-25及び△ε+85 が±１０以
内、１ＭＨｚでのεが２０００以上、１ＭＨｚでのtan
δが３％以下に設定した。従って、試料NO．２、４、
５、８、９、１２は本発明の範囲外のものである。The object of the present invention is to improve the tan δ at a high frequency (1 MHz) with the conventional BaTiO 3 system porcelain composition. Therefore, the standard for non-defective products in the present invention is 1k.
Ε at Hz is 2400 or more, tan δ at 1 kHz is 3%
Below, Δε -25 and Δε +85 at 1 kHz are within ± 10 and ε at 1 MHz is 2000 or more and tan at 1 MHz
δ was set to 3% or less. Therefore, the sample NO. 2, 4,
5, 8, 9, and 12 are outside the scope of the present invention.
【００１６】従来のＢａＴｉＯ3 系誘電体磁器の特性と
本発明の誘電体磁器の特性との比較から明らかなよう
に、従来の誘電体磁器のtan δは１ｋＨｚで０．７８
％、１ＭＨｚで５．２２％であり、１ＭＨｚになると大
幅に大きくなる。これに対して本発明に従う誘電体磁器
のtan δは１ＭＨｚにおいて２．１４〜２．７１％であ
り、従来よりも大幅に低い。As is clear from the comparison between the characteristics of the conventional BaTiO 3 system dielectric ceramic and the characteristics of the dielectric ceramic of the present invention, the tan δ of the conventional dielectric ceramic is 0.78 at 1 kHz.
%, 5.22% at 1 MHz, and becomes significantly large at 1 MHz. On the other hand, the tan δ of the dielectric ceramic according to the present invention is 2.14 to 2.71% at 1 MHz, which is significantly lower than the conventional one.
【００１７】次に各成分の添加量の限定理由を説明す
る。試料NO．４に示すように、ＢａＴｉＯ3 が９７．３
５重量％の場合には１ｋＨｚのεが２４００未満にな
り、且つ△ε-25 が±１０％の範囲から外れる。これに
対して、試料NO．３に示すようにＢａＴｉＯ3 が９７．
５５重量％の場合にはすべての特性が所望範囲に入る。
従って、ＢａＴｉＯ3 の下限値は９７．５５重量％であ
る。また、試料NO．２に示すようにＢａＴｉＯ3 が９
７．９５重量％の場合には△ε+85 が±１０％の範囲か
ら外れる。これに対して、試料NO．１０に示すようにＢ
ａＴｉＯ3 が９７．９０重量％の場合にはすべての特性
が所望範囲に入る。従って、ＢａＴｉＯ3 の上限値は９
７．９０重量％である。Next, the reasons for limiting the amount of each component added will be described. Sample No. 4 shows that BaTiO 3 is 97.3.
In the case of 5% by weight, ε at 1 kHz is less than 2400 and Δε -25 is out of the range of ± 10%. On the other hand, sample NO. As shown in FIG. 3 , BaTiO 3 is 97.
At 55% by weight all properties fall within the desired range.
Therefore, the lower limit of BaTiO 3 is 97.55% by weight. In addition, the sample NO. As shown in 2, BaTiO 3 is 9
In the case of 7.95% by weight, Δε +85 is out of the range of ± 10%. On the other hand, sample NO. B as shown in 10
If ATiO 3 is 97.90 wt% All characteristics enters the desired range. Therefore, the upper limit of BaTiO 3 is 9
7.90% by weight.
【００１８】試料NO．９に示すように、Ｎｂ2 Ｏ5 が
１．６５重量％の場合には△ε+85 が±１０％の範囲か
ら外れる。これに対して、試料NO．１０に示すようにＮ
ｂ2 Ｏ5 が１．８０重量％の場合にはすべての特性が所
望範囲に入る。従って、Ｎｂ2Ｏ5 の下限値は１．８０
重量％である。また、試料NO．１２に示すようにＮｂ2
Ｏ5 が２．２５重量％の場合には１ｋＨｚでのε及び△
ε-25 が所望範囲から外れる。これに対して、Ｎｂ2 Ｏ
5 が２．１０重量％の場合にはすべての特性が所望範囲
に入る。従って、Ｎｂ2 Ｏ5 の上限値は２．１０重量％
である。Sample No. As shown in FIG. 9, Δε +85 is out of the range of ± 10% when Nb 2 O 5 is 1.65% by weight. On the other hand, sample NO. N as shown in 10
When b 2 O 5 is 1.80% by weight, all the properties are in the desired range. Therefore, the lower limit of Nb 2 O 5 is 1.80.
% By weight. In addition, the sample NO. As shown in 12, Nb 2
When O 5 is 2.25% by weight, ε and Δ at 1 kHz
ε -25 is out of the desired range. On the other hand, Nb 2 O
When 5 is 2.10% by weight, all properties are in the desired range. Therefore, the upper limit of Nb 2 O 5 is 2.10% by weight.
Is.
【００１９】試料NO．５に示すようにＭｇＯが０．０５
重量％の場合には△ε+85 が±１０％から外れる。これ
に対して、試料NO．６に示すようにＭｇＯが０．１０重
量％の場合にはすべての特性が所望範囲に入る。従っ
て、ＭｇＯの下限値は０．１０重量％である。また、試
料NO．４に示すようにＭｇＯが０．３５重量％の場合に
は１ｋＨｚでのε及び△ε-25 が所望範囲から外れる。
これに対して、試料NO．３に示すようにＭｇＯが０．２
５重量％の場合にはすべての特性が所望範囲に入る。従
って、ＭｇＯの上限値は０．２５重量％である。Sample No. As shown in 5, MgO is 0.05
In the case of weight%, Δε +85 deviates from ± 10%. On the other hand, sample NO. As shown in 6, when MgO is 0.10% by weight, all the characteristics are in the desired range. Therefore, the lower limit of MgO is 0.10% by weight. In addition, the sample NO. As shown in 4, when MgO is 0.35% by weight, ε and Δε -25 at 1 kHz are out of the desired range.
On the other hand, sample NO. As shown in 3, MgO is 0.2
At 5% by weight, all properties fall within the desired range. Therefore, the upper limit of MgO is 0.25% by weight.
【００２０】試料NO．２に示すように、ＴｉＯ2 が０．
０５重量％の場合には、△ε+85 が±１０％から外れ
る。これに対して、試料NO．１に示すようにＴｉＯ2 が
０．１５重量％の場合にはすべての特性が所望範囲に入
る。従って、ＴｉＯ2 の下限値は０．１５重量％であ
る。また、試料NO．４及び８に示すように、ＴｉＯ2 が
０．３５及び０．４０重量％の場合には１ｋＨｚでのε
及び△ε-25 が所望範囲からそれぞれ外れる。これに対
して、試料NO．７に示すようにＴｉＯ2 が０．３０重量
％の場合にはすべての特性が所望範囲に入る。従って、
ＴｉＯ2 の上限値は０．３０重量％である。Sample No. As shown in 2, TiO 2 is 0.
In the case of 05% by weight, Δε +85 deviates from ± 10%. On the other hand, sample NO. As shown in 1, when TiO 2 is 0.15% by weight, all the characteristics are in the desired range. Therefore, the lower limit of TiO 2 is 0.15% by weight. In addition, the sample NO. As shown in 4 and 8, when TiO 2 is 0.35 and 0.40% by weight, ε at 1 kHz
And Δε -25 are out of the desired range. On the other hand, sample NO. As shown in 7, when TiO 2 is 0.30% by weight, all the characteristics are in the desired range. Therefore,
The upper limit of TiO 2 is 0.30% by weight.
【００２１】[0021]
【変形例】本発明は上述の実施例に限定されるものでな
く、変形可能なものである。例えば、各成分の出発原料
として、ＢａＴｉＯ3 、Ｎｂ2 Ｏ5 、ＭｇＯ、ＴｉＯ2
の代りに、Ｂａ、Ｔｉ、Ｎｂ、Ｍｇ、Ｔｉの元素又はこ
れ等の他の酸化物、炭酸塩、水酸化物等とすることがで
きる。また、ＢａＴｉＯ3 を得るためにＢａＣＯ3とＴ
ｉＯ2 とを等モルに調合し、これを１２００℃で仮焼き
してもよい。[Modification] The present invention is not limited to the above-mentioned embodiment, but can be modified. For example, as a starting material for each component, BaTiO 3 , Nb 2 O 5 , MgO, TiO 2
In place of, an element such as Ba, Ti, Nb, Mg, or Ti, or another oxide thereof, carbonate, hydroxide, or the like can be used. Further, in order to obtain BaTiO 3 , BaCO 3 and T
It is also possible to mix iO 2 with an equimolar amount and calcine this at 1200 ° C.
【図１】本発明の実施例に係わる磁器コンデンサを示す
正面図である。FIG. 1 is a front view showing a porcelain capacitor according to an embodiment of the present invention.
１２ 磁器 １４、１６ 電極 12 porcelain 14 and 16 electrodes
Claims (1)
酸バリウムと、 １．８０〜２．１０重量％のニオブ酸化物と、 ０．１０〜０．２５重量％のマグネシウム酸化物と、 ０．１５〜０．３０重量％のチタン酸化物とから成る誘
電体磁器組成物。1. Barium titanate of 97.55 to 97.90% by weight, niobium oxide of 1.80 to 2.10% by weight, magnesium oxide of 0.10 to 0.25% by weight, A dielectric ceramic composition comprising 0.15 to 0.30% by weight of titanium oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23870993A JP3457714B2 (en) | 1993-08-30 | 1993-08-30 | Dielectric porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23870993A JP3457714B2 (en) | 1993-08-30 | 1993-08-30 | Dielectric porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0765626A true JPH0765626A (en) | 1995-03-10 |
| JP3457714B2 JP3457714B2 (en) | 2003-10-20 |
Family
ID=17034115
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23870993A Expired - Fee Related JP3457714B2 (en) | 1993-08-30 | 1993-08-30 | Dielectric porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3457714B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170077393A (en) * | 2015-12-28 | 2017-07-06 | 삼성전기주식회사 | Dielectric ceramic composition and multilayer ceramic capacitor comprising the same |
| CN116143513A (en) * | 2023-01-06 | 2023-05-23 | 陕西科技大学 | Low-temperature sintering BaTiO 3 Base X8R temperature stable ceramic material and preparation method and application thereof |
-
1993
- 1993-08-30 JP JP23870993A patent/JP3457714B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170077393A (en) * | 2015-12-28 | 2017-07-06 | 삼성전기주식회사 | Dielectric ceramic composition and multilayer ceramic capacitor comprising the same |
| CN116143513A (en) * | 2023-01-06 | 2023-05-23 | 陕西科技大学 | Low-temperature sintering BaTiO 3 Base X8R temperature stable ceramic material and preparation method and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3457714B2 (en) | 2003-10-20 |
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