JPH05279110A - Ceramic composition - Google Patents
Ceramic compositionInfo
- Publication number
- JPH05279110A JPH05279110A JP4100199A JP10019992A JPH05279110A JP H05279110 A JPH05279110 A JP H05279110A JP 4100199 A JP4100199 A JP 4100199A JP 10019992 A JP10019992 A JP 10019992A JP H05279110 A JPH05279110 A JP H05279110A
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- Prior art keywords
- composition
- point
- dielectric constant
- component
- expressed
- Prior art date
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Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は磁器組成物に関し、特に
誘電率および絶縁抵抗が高く、かつ誘電率の温度変化率
が小さい磁器組成物に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a porcelain composition, and more particularly to a porcelain composition having a high dielectric constant and insulation resistance and a small temperature change rate of the dielectric constant.
【0002】[0002]
【従来の技術】従来、高誘電率系磁器組成物としてチタ
ン酸バリウム(BaTiO3)系がよく知られており、
チタン酸カルシウム(CaTiO3)、チタン酸鉛(P
bTiO3)などを添加、置換することにより温度特性
の改善を図っている。2. Description of the Related Art Conventionally, barium titanate (BaTiO 3 ) system has been well known as a high dielectric constant porcelain composition,
Calcium titanate (CaTiO 3 ), lead titanate (P
The temperature characteristics are improved by adding and substituting bTiO 3 ).
【0003】[0003]
【発明が解決しようとする課題】従来の材料で温度変化
率の小さい材料を実現した場合、得られる誘電率はせい
ぜい2000程度にすぎず、コンデンサ用の材料として
は小さすぎる。近年、低温で焼結し、かつ誘電率が高い
材料として鉛系複合ペロブスカイト化合物が報告されて
いる。例えばマグネシウム・ニオブ酸鉛[Pb(Mg
1/3Nb2/3)O3]、ニッケル・ニオブ酸鉛[Pb(N
i1/3Nb2/3)O3]およびチタン酸鉛[PbTiO3]
からなる3成分組成物は、誘電率が20000以上もあ
るが、誘電率の温度変化率が十分に小さくはないという
欠点がある。以上のことから、容量の温度変化率の小さ
いコンデンサを設計することは困難であった。本発明は
以上述べたような従来の課題を解決するためになされた
もので、上記の3成分系組成物の優れた特性を満足し、
比抵抗の値が高く、誘電率の温度変化率が小さい磁器組
成物を提供することにある。When a material having a small temperature change rate is realized by a conventional material, the obtained dielectric constant is about 2000 at most, which is too small as a material for a capacitor. In recent years, a lead-based composite perovskite compound has been reported as a material that is sintered at a low temperature and has a high dielectric constant. For example, magnesium lead niobate [Pb (Mg
1/3 Nb 2/3 ) O 3 ], nickel lead niobate [Pb (N
i 1/3 Nb 2/3 ) O 3 ] and lead titanate [PbTiO 3 ]
The three-component composition consisting of (3) has a dielectric constant of 20,000 or more, but has a drawback that the rate of change in dielectric constant with temperature is not sufficiently small. From the above, it was difficult to design a capacitor having a small rate of change in capacitance with temperature. The present invention has been made to solve the above-described conventional problems, and satisfies the excellent characteristics of the above three-component composition,
It is intended to provide a porcelain composition having a high specific resistance value and a small rate of change in dielectric constant with temperature.
【0004】[0004]
【課題を解決するための手段】本発明は、マグネシウム
・タングステン酸鉛[Pb(Mg1/2W1/2)O3]、チ
タン酸鉛[PbTiO3]および亜鉛・ニオブ酸鉛[P
b(Zn1/3Nb2/3)O3]からなる3成分組成物を
[Pb(Mg1/2W1/2)O3]x[PbTiO3]y[Pb
(Zn1/3Nb2/3]O3]z(ただしx+y+z=1.
0)と表現したとき、この3成分組成図において、以下
の組成点、 (x=0.98, y=0, z=0.02)・・・(a) (x=0.43, y=0.55, z=0.02)・・・(b) (x=0.20, y=0.20, z=0.60)・・・(c) (x=0.40, y=0, z=0.60)・・・(d) の各点を結ぶ線上、およびこの4点に囲まれる組成範囲
内にある主成分組成物の鉛(Pb)をランタン(La)
で0.01〜30mol%置換したことを特徴とする磁
器組成物である。The present invention is directed to lead magnesium tungstate [Pb (Mg 1/2 W 1/2 ) O 3 ], lead titanate [PbTiO 3 ] and zinc lead niobate [P
[Pb (Mg 1/2 W 1/2 ) O 3 ] x [PbTiO 3 ] y [Pb] is a three-component composition composed of b (Zn 1/3 Nb 2/3 ) O 3 ].
(Zn 1/3 Nb 2/3 ] O 3 ] z (where x + y + z = 1.
0), in the three-component composition diagram, the following composition points, (x = 0.98, y = 0, z = 0.02) (a) (x = 0.43, y = 0.55, z = 0.02) ... (b) (x = 0.20, y = 0.20, z = 0.60) ... (c) (x = 0.40, y = 0, z = 0.60) ... (d) on the line connecting the points and within the composition range surrounded by these four points, lead (Pb) of the main component composition is replaced with lanthanum (La).
It is a porcelain composition characterized by being replaced by 0.01 to 30 mol%.
【0005】本発明における主成分組成範囲を表す3成
分組成図は図1で示される。図中、(a)〜(d)は各
組成点を表し、本発明に含まれる組成範囲は図の斜線で
示す範囲およびその境界線上である。本発明の主組成お
よびLaの置換量が特許請求範囲外の組成では、誘電率
の絶対値や比抵抗が小さくなるという弊害が現れるため
コンデンサ用の磁器組成物としては適さない。したがっ
て、上述の範囲に限られる。FIG. 1 shows a three-component composition diagram showing the main component composition range in the present invention. In the figure, (a) to (d) represent respective composition points, and the composition range included in the present invention is the range indicated by the diagonal lines in the figure and the boundary line thereof. The main composition of the present invention and the composition in which the amount of substitution of La is out of the scope of claims are not suitable as a porcelain composition for a capacitor because of the adverse effect that the absolute value of the dielectric constant and the specific resistance decrease. Therefore, it is limited to the above range.
【0006】[0006]
【実施例】以下、本発明の実施例について詳細に説明す
る。 実施例1 出発原料として酸化鉛(PbO)、酸化マグネシウム
(MgO)、酸化タングステン(WO3)、酸化ニオブ
(Nb2O5)、酸化亜鉛(ZnO)、酸化チタン(Ti
O2)および酸化ランタン(La2O3)を使用し、表
1,表3および表5に示した配合比となるように各々秤
量する。次に秤量した各材料をボールミル中で湿式混合
したのち、750〜850℃で仮焼を行い、この粉末を
ボールミルで粉砕し、濾過、乾燥後、有機バインダを入
れて整粒後プレスし、直径約16mm、厚さ約2mmの
円板2枚と、直径約16mm、厚さ約10mmの円柱を
作製した。次にこれらの組成範囲の試料を950〜10
50℃の温度で1時間焼成を行った。EXAMPLES Examples of the present invention will be described in detail below. Example 1 Lead oxide (PbO), magnesium oxide (MgO), tungsten oxide (WO 3 ), niobium oxide (Nb 2 O 5 ), zinc oxide (ZnO), titanium oxide (Ti) were used as starting materials.
O 2 ) and lanthanum oxide (La 2 O 3 ) are used and weighed so that the compounding ratios shown in Table 1, Table 3 and Table 5 are obtained. Next, the weighed materials are wet-mixed in a ball mill, then calcined at 750 to 850 ° C., the powder is crushed by a ball mill, filtered, dried, and then an organic binder is added to adjust the particle size, followed by pressing. Two discs having a thickness of about 16 mm and a thickness of about 2 mm and a cylinder having a diameter of about 16 mm and a thickness of about 10 mm were produced. Next, samples in these composition ranges are set to 950 to 10
Firing was performed at a temperature of 50 ° C. for 1 hour.
【0007】焼成した円柱でアルキメデス法を用いて密
度を求めた。次に、円板の上下面に600℃で銀電極を
焼き付け、デジタルLCRメータで周波数1kHz、電
圧1Vr.m.s、室温で容量と誘電損失を測定し、誘
電率を求めた。次に絶縁抵抗計で50Vの電圧を1分間
印加して、絶縁抵抗を測定し、比抵抗を算出した。The density was determined on the fired cylinder using the Archimedes method. Next, silver electrodes were baked on the upper and lower surfaces of the disc at 600 ° C., and the frequency was 1 kHz and the voltage was 1 Vr. m. s, the capacitance and the dielectric loss were measured at room temperature to obtain the dielectric constant. Next, a voltage of 50 V was applied for 1 minute with an insulation resistance meter, the insulation resistance was measured, and the specific resistance was calculated.
【0008】このようにして得られた磁器の主成分、
[Pb(Mg1/2W1/2)O3]x[PbTiO3]y[Pb
(Zn1/3Nb2/3]O3]z の配合比x、y、zおよび
La置換量を表1、表3、表5に示し、室温での誘電
率、比抵抗および誘電率の変化率(20℃における誘電
率を基準)を表2、表4、表6に示す。なお表中、試料
番号で、*はLaの置換量が本発明の範囲外の組成のも
のを示し、**は主成分組成が本発明の範囲外の組成の
ものを示す。表1〜表6からも明らかなように、Pb
(Mg1/2W1/2)O3−PbTiO3−Pb(Zn1/3N
b2/3)O3 3成分系組成物の鉛(Pb)をランタン
(La)で0.01〜30mol%置換した本発明の磁
器組成物は、高い比抵抗を保持し、誘電率の温度変化率
の小さな積層セラミックコンデンサ用磁器組成物として
優れた材料を提供するものである。The main component of the porcelain thus obtained,
[Pb (Mg 1/2 W 1/2 ) O 3 ] x [PbTiO 3 ] y [Pb
The compounding ratios x, y, z and the La substitution amount of (Zn 1/3 Nb 2/3 ] O 3 ] z are shown in Tables 1, 3 and 5, and the dielectric constant at room temperature, the specific resistance and the dielectric constant The rate of change (based on the dielectric constant at 20 ° C.) is shown in Tables 2, 4, and 6. In the table, the sample number, * indicates a composition having a La substitution amount outside the range of the present invention, ** indicates a composition whose main component composition is out of the range of the present invention .. As is clear from Tables 1 to 6, Pb
(Mg 1/2 W 1/2 ) O 3 -PbTiO 3 -Pb (Zn 1/3 N
The porcelain composition of the present invention in which lead (Pb) in the b 2/3 ) O 3 ternary composition is replaced by lanthanum (La) in an amount of 0.01 to 30 mol% retains a high specific resistance and has a dielectric constant temperature of An excellent material is provided as a ceramic composition for a monolithic ceramic capacitor having a small change rate.
【0009】[0009]
【表1】 試料番号1〜20の配合割合 ───────────────────────────────── 試料 Pb(Mg1/2w1/2)O3 PbTiO3 Pb(Zn1/3Nb2/3)O3 La置換量 番号 (mol%) (mol%) (mol%) (mol%) ───────────────────────────────── 1* 70 0 30 0 2* 50 10 40 0 3 50 10 40 10 4* 40 10 50 0 5 40 10 50 5 6* 30 10 60 0 7** 25 10 65 0 8* 40 20 40 0 9 40 20 40 0.01 10 40 20 40 10 11 40 20 40 20 12* 35 20 45 0 13* 30 20 50 0 14 30 20 50 10 15 30 20 50 30 16* 20 20 60 0 17 20 20 60 0.01 18 20 20 60 2 19 20 20 60 10 20 20 20 60 30 ─────────────────────────────────[Table 1] Mixing ratio of sample numbers 1 to 20 ───────────────────────────────── Sample Pb (Mg 1 / 2 w 1/2 ) O 3 PbTiO 3 Pb (Zn 1/3 Nb 2/3 ) O 3 La Substitution number Number (mol%) (mol%) (mol%) (mol%) ─────── ─────────────────────────── 1 * 70 0 30 0 2 * 50 10 40 0 3 50 10 40 10 4 * 40 10 50 0 5 40 10 50 5 6 * 30 10 60 0 7 ** 25 10 65 08 8 * 40 20 40 0 9 40 20 40 0.01 10 40 20 40 10 11 40 20 40 20 12 * 35 20 45 0 13 * 30 20 50 0 14 30 20 50 10 15 30 20 50 30 16 * 20 20 60 0 17 20 20 60 0.01 18 20 20 60 2 19 20 20 60 10 20 20 20 60 30 ───────────── ─────────────────────
【0010】[0010]
【表2】 試料番号1〜20の特性 ────────────────────────────────── 試料 誘電率 比抵抗 誘電率の変化率 番号 (Ω・cm) ───────────── −30℃(%) 85℃(%) ────────────────────────────────── 1* 2870 3.8×1014 +20.2 −31.6 2* 3700 5.3×1013 +15.8 −28.7 3 3300 1.5×1014 +16.5 −23.8 4* 3950 7.3×1013 +16.5 −27.4 5 3530 1.6×1014 +17.1 −24.8 6* 3400 5.6×1012 −21.1 −18.5 7** 2920 2.8×1011 −36.3 −4.3 8* 6180 8.8×1012 −8.5 −29.8 9 6070 1.4×1013 −6.3 −31.5 10 5160 1.9×1013 +1.2 −26.1 11 4100 2.8×1013 +11.3 −25.5 12* 7420 4.2×1012 −28.5 −27.5 13* 8480 2.6×1012 −44.3 −10.3 14 6870 5.8×1012 −36.1 −12.5 15 4750 1.9×1013 −26.3 −17.5 16* 10060 1.2×1012 −55.6 −1.2 17 9900 1.6×1012 −53.7 −2.5 18 9260 1.9×1012 −43.1 −7.6 19 8750 2.8×1012 −37.3 −16.3 20 7300 4.3×1012 −28.5 −25.1 ──────────────────────────────────[Table 2] Characteristics of sample numbers 1 to 20 ────────────────────────────────── Sample dielectric constant Specific resistance Percentage change in permittivity (Ωcm) ───────────── −30 ℃ (%) 85 ℃ (%) ──────────────── ─────────────────── 1 * 2870 3.8 × 10 14 +20.2 −31.6 2 * 3700 5.3 × 10 13 +15.8 −28.7 3 3300 1.5 × 10 14 +16 .5 −23.8 4 * 3950 7.3 × 10 13 +16.5 −27.4 5 3530 1.6 × 10 14 +17.1 −24.8 6 * 3400 5.6 × 10 12 −21.1 −18.5 7 ** 2920 2.8 × 10 11 −36.3 −4.3 8 * 6180 8.8 × 10 12 −8.5 −29.8 9 6070 1.4 × 10 13 −6.3 −31.5 10 5160 1.9 × 10 13 +1.2 −26.1 11 4100 2.8 × 10 13 +11.3 −25.5 12 * 7420 4.2 × 10 12 −28.5 −27.5 13 * 8480 2.6 × 10 12 −44.3 −10.3 14 6870 5.8 × 10 12 −36.1 −12.5 15 4750 1.9 × 10 13 −26.3 −17.5 16 * 10060 1.2 × 10 12 −55.6 −1.2 17 9 900 1.6 × 10 12 −53.7 −2.5 18 9260 1.9 × 10 12 −43.1 −7.6 19 8750 2.8 × 10 12 −37.3 −16.3 20 7300 4.3 × 10 12 −28.5 −25.1 ─────────── ───────────────────────
【0011】[0011]
【表3】 試料番号21〜40の配合割合 ────────────────────────────────── 試料 Pb(Mg1/2w1/2)O3 PbTiO3 Pb(Zn1/3Nb2/3)O3 La置換量 番号 (mol%) (mol%) (mol%) (mol%) ────────────────────────────────── 21* 20 20 60 40 22** 15 20 65 0 23* 40 30 30 0 24 40 30 30 10 25 40 30 30 30 26* 30 30 40 0 27** 25 30 45 0 28* 40 40 20 0 29 40 40 20 10 30* 35 40 25 0 31 35 40 25 0.01 32 35 40 25 1 33 35 40 25 10 34 35 40 25 30 35* 35 40 25 40 36** 30 40 30 0 37* 40 50 10 0 38 40 50 10 1 39 40 50 10 10 40 40 50 10 30 ──────────────────────────────────[Table 3] Mixing ratio of sample numbers 21 to 40 ────────────────────────────────── Sample Pb (Mg 1/2 w 1/2 ) O 3 PbTiO 3 Pb (Zn 1/3 Nb 2/3 ) O 3 La Substitution number Number (mol%) (mol%) (mol%) (mol%) ───── ───────────────────────────── 21 * 20 20 60 40 22 22 ** 15 20 65 0 23 * 40 30 30 0 24 40 30 30 10 25 40 30 30 30 26 * 30 30 40 0 27 ** 25 30 45 0 28 * 40 40 20 0 29 40 40 20 10 30 * 35 40 25 0 31 35 40 25 0.01 32 35 40 25 1 33 35 40 25 10 34 35 40 25 30 35 * 35 40 25 40 36 ** 30 40 30 0 37 * 40 50 10 0 38 40 50 10 1 39 40 50 10 10 40 40 50 10 30 ───────── ───────────────────────────
【0012】[0012]
【表4】 試料番号21〜40の特性 ────────────────────────────────── 試料 誘電率 比抵抗 誘電率の変化率 番号 (Ω・cm) ──────────── −30℃(%) 85℃(%) ────────────────────────────────── 21* 4730 1.1×1012 −53.1 −23.5 22** 9850 3.5×1011 −65.1 +3.5 23* 10400 1.4×1013 −45.6 −28.0 24 8310 3.1×1013 −43.2 −29.5 25 5300 3.8×1013 −40.6 −27.3 26* 8680 3.6×1012 −29.8 −11.4 27** 7420 5.6×1011 −19.5 −2.6 28* 9680 7.4×1012 −51.3 −17.5 29 8310 1.1×1013 −33.1 −17.2 30* 10220 5.3×1012 −54.7 −13.5 31 10030 7.1×1012 −50.5 −18.7 32 9260 8.8×1012 −45.3 −16.1 33 8110 1.2×1013 −41.3 −21.6 34 6520 1.5×1013 −31.7 −28.1 35* 3700 6.1×1012 −35.3 −25.6 36** 8150 8.6×1011 −59.8 −9.8 37* 12500 2.1×1012 −51.2 −16.3 38 11980 2.3×1012 −50.3 −17.1 39 9850 4.3×1012 −31.1 −22.1 40 6870 7.8×1012 −22.1 −11.5 ──────────────────────────────────[Table 4] Characteristics of Sample Nos. 21 to 40 ────────────────────────────────── Sample dielectric constant Specific resistance Dielectric constant change number (Ωcm) ──────────── −30 ℃ (%) 85 ℃ (%) ───────────────── ────────────────── 21 * 4730 1.1 × 10 12 −53.1 −23.5 22 ** 9850 3.5 × 10 11 −65.1 +3.5 23 * 10400 1.4 × 10 13 − 45.6 -28.0 24 8310 3.1 x 10 13 -43.2 -29.5 25 5300 3.8 x 10 13 -40.6 -27.3 26 * 8680 3.6 x 10 12 -29.8 -11.4 27 ** 7420 5.6 x 10 11 -19.5 -2.6 28 * 9680 7.4 × 10 12 -51.3 -17.5 29 8310 1.1 × 10 13 -33.1 -17.2 30 * 10 220 5.3 × 10 12 -54.7 -13.5 31 100 30 7.1 × 10 12 -50.5 -18.7 32 9260 8.8 × 10 12 -45.3 -16.1 33 33 8110 1.2 × 10 13 −41.3 −21.6 34 6520 1.5 × 10 13 −31.7 −28.1 35 * 3700 6.1 × 10 12 −35.3 −25.6 36 ** 8150 8 .6 × 10 11 −59.8 −9.8 37 * 12,500 2.1 × 10 12 −51.2 −16.3 38 11980 2.3 × 10 12 −50.3 −17.1 39 39850 4.3 × 10 12 −31.1 −22.1 40 6870 7.8 × 10 12 −22.1 −11.5 ───────────────────────────────────
【0013】[0013]
【表5】 試料番号41〜42の配合割合 ────────────────────────────────── 試料 Pb(Mg1/2w1/2)O3 PbTiO3 Pb(Zn1/3Nb2/3)O3 La置換量 番号 (mol%) (mol%) (mol%) (mol%) ────────────────────────────────── 41* 49 49 2 0 42 49 49 2 10 ──────────────────────────────────[Table 5] Mixing ratio of sample numbers 41 to 42 ─────────────────────────────────── Sample Pb (Mg 1/2 w 1/2 ) O 3 PbTiO 3 Pb (Zn 1/3 Nb 2/3 ) O 3 La Substitution number Number (mol%) (mol%) (mol%) (mol%) ───── ───────────────────────────── 41 * 49 49 2 0 42 49 49 2 10 ─────────── ────────────────────────
【0014】[0014]
【表6】 試料番号41〜42の特性 ────────────────────────────────── 試料 誘電率 比抵抗 誘電率の変化率 番号 (Ω・cm) ──────────── −30℃(%) 85℃(%) ────────────────────────────────── 41* 7830 5.6×1012 −46.8 −28.3 42 6320 9.5×1012 −37.8 −32.5 ──────────────────────────────────[Table 6] Characteristics of sample Nos. 41 to 42 ────────────────────────────────── Sample dielectric constant Specific resistance Dielectric constant change number (Ωcm) ──────────── −30 ℃ (%) 85 ℃ (%) ───────────────── ────────────────── 41 * 7830 5.6 × 10 12 −46.8 −28.3 42 6320 9.5 × 10 12 −37.8 −32.5 ──────────── ───────────────────────
【0015】[0015]
【発明の効果】以上説明したように、本発明の磁器組成
物は比抵抗の値が高く、誘電率の温度変化率が小さい。
このため、本発明の磁器組成物を用いれば容量の温度変
化率が小さく、信頼性の高い積層セラミックコンデンサ
を設計することができる等の効果を有する。As described above, the porcelain composition of the present invention has a high specific resistance value and a small rate of change in dielectric constant with temperature.
Therefore, when the porcelain composition of the present invention is used, there is an effect such that the rate of change in capacitance with temperature is small and a highly reliable laminated ceramic capacitor can be designed.
【図1】本発明の主成分組成範囲を示すPb(Mg1/2
W1/2)O3−PbTiO3−Pb(Zn1/3Nb2/3)O3
3成分組成図である。FIG. 1 shows Pb (Mg 1/2) showing the main component composition range of the present invention.
W 1/2) O 3 -PbTiO 3 -Pb (Zn 1/3 Nb 2/3) O 3
It is a three-component composition diagram.
Claims (1)
(Mg1/2W1/2)O3]、チタン酸鉛[PbTiO3]お
よび亜鉛・ニオブ酸鉛[Pb(Zn1/3Nb2/3)O3]
からなる3成分組成物を[Pb(Mg1/2W1/2)O3]x
[PbTiO3]y[Pb(Zn1/3Nb2/3]O3]z(た
だしx+y+z=1.0)と表現したとき、この3成分
組成図において、以下の組成点、 (x=0.98, y=0, z=0.02) (x=0.43, y=0.55, z=0.02) (x=0.20, y=0.20, z=0.60) (x=0.40, y=0, z=0.60) の各点を結ぶ線上、およびこの4点に囲まれる組成範囲
内にある主成分組成物の鉛(Pb)をランタン(La)
で0.01〜30mol%置換したことを特徴とする磁
器組成物。1. Magnesium lead tungstate [Pb
(Mg 1/2 W 1/2 ) O 3 ], lead titanate [PbTiO 3 ] and lead zinc niobate [Pb (Zn 1/3 Nb 2/3 ) O 3 ].
A three-component composition consisting of [Pb (Mg 1/2 W 1/2 ) O 3 ] x
When expressed as [PbTiO 3] y [Pb (Zn 1/3 Nb 2/3 ] O 3 ] z (where x + y + z = 1.0), in the three-component composition diagram, the following composition points, (x = 0 .98, y = 0, z = 0.02) (x = 0.43, y = 0.55, z = 0.02) (x = 0.20, y = 0.20, z = 0.60) ) (X = 0.40, y = 0, z = 0.60) on the line connecting the respective points and within the composition range surrounded by these four points, lead (Pb) of the main component composition is replaced with lanthanum (La). )
A porcelain composition characterized by being replaced by 0.01 to 30 mol%.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4100199A JPH05279110A (en) | 1992-03-27 | 1992-03-27 | Ceramic composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4100199A JPH05279110A (en) | 1992-03-27 | 1992-03-27 | Ceramic composition |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH05279110A true JPH05279110A (en) | 1993-10-26 |
Family
ID=14267636
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4100199A Pending JPH05279110A (en) | 1992-03-27 | 1992-03-27 | Ceramic composition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH05279110A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0920558A (en) * | 1995-06-29 | 1997-01-21 | Nec Corp | Ceramic composition |
KR100478127B1 (en) * | 2002-09-03 | 2005-03-21 | (주) 알엔투테크놀로지 | Dielectric Ceramic Composition |
-
1992
- 1992-03-27 JP JP4100199A patent/JPH05279110A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0920558A (en) * | 1995-06-29 | 1997-01-21 | Nec Corp | Ceramic composition |
KR100478127B1 (en) * | 2002-09-03 | 2005-03-21 | (주) 알엔투테크놀로지 | Dielectric Ceramic Composition |
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