JPH0750369A - Ceramic heat radiator for semiconductor and manufacture thereof - Google Patents
Ceramic heat radiator for semiconductor and manufacture thereofInfo
- Publication number
- JPH0750369A JPH0750369A JP21231693A JP21231693A JPH0750369A JP H0750369 A JPH0750369 A JP H0750369A JP 21231693 A JP21231693 A JP 21231693A JP 21231693 A JP21231693 A JP 21231693A JP H0750369 A JPH0750369 A JP H0750369A
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- Prior art keywords
- aln
- heat radiator
- base portion
- present
- paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【発明の詳細な説明】Detailed Description of the Invention
【０００１】[0001]
【産業上の利用分野】本発明は、半導体用セラミックス
放熱体およびその製造方法に関する。より詳細には、Ｉ
ＣチップやＬＳＩチップ等のチップを搭載するヒートシ
ンクに取り付けられる冷却用放熱体および製造方法に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic heat radiator for semiconductors and a method for manufacturing the same. More specifically, I
The present invention relates to a cooling radiator mounted on a heat sink having a chip such as a C chip or an LSI chip and a manufacturing method.
【０００２】[0002]
【従来の技術】近年、電子機器の小型化、軽量化、高速
化が進むにつれ、回路基板上の電子素子の実装密度が高
くなり、放熱を効率的に行うことおよび熱ストレスに対
しての信頼性に対する要求も高くなってきた。この対策
として、金属製冷却フィンを装着した絶縁基材からなる
放熱体に電子素子を搭載し、電子素子が発生する熱を冷
却フィンから放熱させる手法が採用されている。2. Description of the Related Art In recent years, as electronic devices have become smaller, lighter and faster, the mounting density of electronic elements on a circuit board has increased, and efficient heat dissipation and reliability against thermal stress have been achieved. The demand for sex has also increased. As a countermeasure against this, a method is adopted in which an electronic element is mounted on a radiator made of an insulating base material on which a metal cooling fin is mounted, and heat generated by the electronic element is radiated from the cooling fin.
【０００３】上記の放熱体の冷却フィンには、金属以外
にも窒化アルミニウム（AlＮ）焼結体が使用されてき
た。AlＮ焼結体は、熱伝導率が高く、熱放熱性に優れて
いると、共に、高い絶縁性を有し、さらに熱膨張係数が
電子素子とほぼ一致する。従って、ＩＣ、トランジスタ
等の電子素子を直接搭載することが可能であり、上記の
放熱体の素材として金属よりも適している点が多い。Aluminum nitride (AlN) sintered bodies have been used in addition to metals for the cooling fins of the radiator. When the AlN sintered body has a high thermal conductivity and an excellent heat radiation property, both have a high insulating property, and the thermal expansion coefficient thereof is substantially the same as that of the electronic element. Therefore, it is possible to directly mount an electronic element such as an IC and a transistor, and it is more suitable as a material of the above-mentioned heat radiator than metal.
【０００４】従来AlＮ放熱体を製造する場合には、AlＮ
放熱体の縦、横、高さよりも大きな寸法のむくのAlＮ焼
結体ブロックを切削加工あるいは研磨加工して冷却フィ
ンを形成していた。In the case of manufacturing a conventional AlN heat radiator, AlN
A cooling fin was formed by cutting or polishing a stripped AlN sintered body block having dimensions larger than the length, width and height of the radiator.
【０００５】また、加工効率を向上させるため、特開平
５−6948号公報に開示されている方法では、図８(a)に
示すよう、貫通した溝52が形成されたAlＮ焼結体ブロッ
ク50を作製し、一端を切断することにより図８(b)に示
すようなフィン53を有するAlＮ放熱体51を作製してい
る。Further, in order to improve the processing efficiency, according to the method disclosed in Japanese Patent Laid-Open No. 5-6948, as shown in FIG. 8 (a), an AlN sintered body block 50 having a through groove 52 is formed. Is produced and one end is cut to produce an AlN radiator 51 having fins 53 as shown in FIG. 8 (b).
【０００６】[0006]
【発明が解決しようとする課題】上記従来の製造方法で
は、むくのAlＮ焼結体ブロックを切削・研磨して冷却フ
ィンを形成するので極めて加工効率が悪かった。また、
切削加工時あるいは研磨加工時にAlＮ焼結体に欠けやク
ラックあるいは割れといった破損が生じる可能性が高
く、歩留低下の原因となっていた。さらに、切削部分が
多く、材料コストが余分に加わり、コスト上昇の原因と
なっていた。In the above conventional manufacturing method, since the cooling fin is formed by cutting and polishing the bare AlN sintered body block, the processing efficiency is extremely poor. Also,
There is a high possibility that the AlN sintered body will be damaged such as chips, cracks, or breaks during cutting or polishing, which has been a cause of yield reduction. Further, since there are many cutting portions, the material cost is added, which causes a cost increase.
【０００７】また、特開平５−6948号公報に開示されて
いる方法では、平行に配置された板状のフィン部を有す
る放熱体を作製することは可能であるが、複雑な形状の
フィン部を有する放熱体を作製することはできない。し
かしながら、熱設計、機械設計等から複雑な形状のフィ
ン部を有する放熱体が要求されることがある。Further, according to the method disclosed in JP-A-5-6948, it is possible to manufacture a radiator having plate-shaped fins arranged in parallel, but the fins having a complicated shape are produced. It is not possible to fabricate a radiator having However, a heat radiator having a fin portion having a complicated shape may be required due to thermal design, mechanical design, or the like.
【０００８】そこで本発明の目的は、上記従来技術の問
題点を解決した新規な構成の半導体用AlＮ放熱体および
その製造方法を提供することにある。Therefore, an object of the present invention is to provide an AlN heat radiator for semiconductors having a novel structure and a method for manufacturing the same, which solves the above-mentioned problems of the prior art.
【０００９】[0009]
【課題を解決するための手段】本発明に従うと、AlＮを
主成分とする焼結体でそれぞれ構成された、板状のベー
ス部と、ベース部の一面上に配置された複数のフィン部
とを備える半導体用セラミックス放熱体において、ベー
ス部とフィン部とが別々の部材であり、接合手段により
接合されていることを特徴とする半導体用セラミックス
放熱体が提供される。According to the present invention, a plate-shaped base portion each made of a sintered body containing AlN as a main component, and a plurality of fin portions arranged on one surface of the base portion are provided. In the ceramic heat radiator for semiconductors including the above, there is provided a ceramic heat radiator for semiconductors, characterized in that the base portion and the fin portion are separate members and are joined by joining means.
【００１０】本発明の半導体用セラミックス放熱体にお
いては、前記接合手段が、AlＮを主成分とするペースト
の焼成体であることが好ましい。また、このペーストの
焼成体が、10重量％以上99.9重量％以下のAlＮを含むこ
とが好ましい。In the ceramic heat radiator for semiconductors of the present invention, it is preferable that the joining means is a fired body of a paste containing AlN as a main component. Further, it is preferable that the fired body of this paste contains 10% by weight or more and 99.9% by weight or less of AlN.
【００１１】さらに本発明の半導体用セラミックス放熱
体は、フィン部が、複数の部材から構成されていても、
一体の部材で構成されていてもよい。ベース部は、メタ
ライズまたはめっきされていることが好ましい。また、
メタライズおよびめっきの両方の処理が施されていても
よい。この場合、メタライズの主成分が、Ｗ、Mo、Au、
Ag、Pt、Ti、Pd、Cu、Ni、Al、PbまたはSnであることが
好ましく、めっきの主成分が、Ni、Au、Cr、Co、Cu、A
g、AlまたはSnであることが好ましい。Further, in the ceramic heat radiator for semiconductors of the present invention, even if the fin portion is composed of a plurality of members,
It may be composed of an integral member. The base portion is preferably metallized or plated. Also,
Both metallization and plating may be applied. In this case, the main components of metallization are W, Mo, Au,
Ag, Pt, Ti, Pd, Cu, Ni, Al, Pb or Sn is preferable, and the main component of plating is Ni, Au, Cr, Co, Cu, A.
It is preferably g, Al or Sn.
【００１２】また、本発明においては、上記本発明の半
導体用セラミックス放熱体を製造する方法として、互い
に別の部材からなるベース部およびフィン部の少なくと
も一方にAlＮを主成分とするペーストを塗布する工程
と、ベース部上にフィン部を配置する工程と、ペースト
を焼成してベース部とフィン部とを接合する工程とを含
むことを特徴とする製造方法が提供される。Further, in the present invention, as a method for manufacturing the above-mentioned ceramic heat radiator for a semiconductor of the present invention, a paste containing AlN as a main component is applied to at least one of a base portion and a fin portion which are different members from each other. There is provided a manufacturing method including a step, a step of disposing a fin portion on the base portion, and a step of firing a paste to bond the base portion and the fin portion.
【００１３】本発明の方法では、ベース部およびフィン
部の部材の両方が、AlＮを主成分とする焼結体部材であ
ってもよいし、AlＮを主成分とする未焼結の成形体であ
ってもよい。また、ベース部およびフィン部の部材のい
ずれか一方を、AlＮを主成分とする未焼結の成形体とす
ることもできる。部材に未焼結の成形体を使用した場合
は上記のペーストの焼成工程の際に同時に焼成されるこ
とが好ましい。また、本発明の方法で使用するAlＮを主
成分とするペーストは、無機成分が10重量％以上99.9重
量％以下のAlＮを含むことが好ましい。In the method of the present invention, both the members of the base portion and the fin portion may be sintered body members containing AlN as a main component, or unsintered compacts containing AlN as a main component. It may be. Further, one of the members of the base portion and the fin portion may be an unsintered compact having AlN as a main component. When an unsintered molded body is used for the member, it is preferable that the green body is fired at the same time as the above-mentioned paste firing step. The paste containing AlN as the main component used in the method of the present invention preferably contains 10% by weight or more and 99.9% by weight or less of AlN as an inorganic component.
【００１４】[0014]
【作用】本発明の半導体用セラミックス放熱体は、AlＮ
を主成分とするセラミックスのベース部とフィン部とが
別の部材でそれぞれ構成されており、両者が接合手段で
接合されている。また、本発明の方法では、それぞれ別
部材のベース部とフィン部との少なくとも一方に、AlＮ
を主成分とするペーストを塗布する工程と、ベース部上
にフィン部を配置する工程と、ペーストを焼成してベー
ス部とフィン部とを接合する工程とを含む。従って、本
発明の半導体用セラミックス放熱体は、切削加工を行わ
ずに製造できるので、高い効率で製造可能であり、ま
た、材料の無駄がほとんどない。また、フィン部の形状
が複雑な放熱体も容易に作製することができる。The ceramic heat sink for semiconductors of the present invention is made of AlN.
The base part and the fin part of the ceramics containing as a main component are respectively constituted by different members, and both are joined by a joining means. In the method of the present invention, AlN is formed on at least one of the base portion and the fin portion of different members.
A step of applying a paste containing as a main component, a step of arranging the fin portion on the base portion, and a step of firing the paste to join the base portion and the fin portion. Therefore, the ceramics heat radiator for semiconductors of the present invention can be manufactured without cutting, and therefore can be manufactured with high efficiency, and there is almost no waste of material. Further, a radiator having a complicated fin portion can be easily manufactured.
【００１５】本発明の半導体用セラミックス放熱体で
は、ベース部とフィン部とをAlＮを主成分とするペース
トを使用して接合することが好ましい。このペースト
は、無機成分の10重量％以上99.9％以下のAlＮを含むこ
とが好ましい。ペーストの無機成分中に含まれるAlＮが
10重量％以下の場合、接合部の熱抵抗が大きくなり、熱
特性が劣化するために好ましくない。また、ペーストの
無機成分中に含まれるAlＮが99.9重量％を越える場合、
AlＮペーストの焼結が阻害されるため好ましくない。ま
た、密着性を向上させるために、微量のMg、Ti等の金属
をAlＮペーストに加えることもできる。In the ceramic heat radiator for semiconductors of the present invention, it is preferable that the base portion and the fin portion are joined together by using a paste containing AlN as a main component. This paste preferably contains 10% by weight or more and 99.9% or less of AlN as an inorganic component. AlN contained in the inorganic component of the paste
If it is 10% by weight or less, the thermal resistance of the joint becomes large and the thermal characteristics deteriorate, which is not preferable. In addition, when AlN contained in the inorganic component of the paste exceeds 99.9% by weight,
It is not preferable because the sintering of the AlN paste is hindered. Further, in order to improve the adhesiveness, a trace amount of metal such as Mg or Ti can be added to the AlN paste.
【００１６】本発明で使用するAlＮペーストは、ベース
部、フィン部との濡れ性に優れ、良好な密着強度が得ら
れる。さらに、焼成後のペーストは、AlＮを主成分とす
る焼成体となるので、ベース部およびフィン部と比較し
た場合に熱膨張係数の差が小さい。従って、ベース部と
フィン部の間に働く熱応力も小さく、熱サイクルおよび
熱衝撃に対する接合信頼性が高い。The AlN paste used in the present invention is excellent in wettability with the base portion and the fin portion and has good adhesion strength. Further, since the paste after firing becomes a fired body containing AlN as a main component, the difference in the coefficient of thermal expansion is small when compared with the base portion and the fin portion. Therefore, the thermal stress acting between the base portion and the fin portion is small, and the joining reliability against the thermal cycle and thermal shock is high.
【００１７】本発明の方法において、ベース部、フィン
部の部材はプレス法で成型してもよいし、ドクターブレ
ード法により作製してもよい。本発明の方法では、それ
ぞれの部材は、未焼結のままペーストを塗布し、ベース
部の部材上にフィン部の部材を配置して同時焼成して本
発明のセラミックス放熱体を製造してもよい。一方、本
発明の方法では、プレス成型、あるいはドクターブレー
ド法で作製したシートを成型した成型体を焼成して焼結
部材とし、ペーストを塗布してベース部の部材上にフィ
ン部の部材を配置してペーストのみを焼成して、本発明
のセラミックス放熱体を製造することもできる。In the method of the present invention, the members of the base portion and the fin portion may be molded by a pressing method or may be manufactured by a doctor blade method. In the method of the present invention, each member is coated with the paste as it is in a non-sintered state, the member of the fin portion is arranged on the member of the base portion and co-fired to manufacture the ceramic radiator of the present invention. Good. On the other hand, in the method of the present invention, a molded body obtained by molding a sheet produced by press molding or a doctor blade method is fired to form a sintered member, and a paste is applied to dispose the fin portion member on the base portion member. Then, the paste alone can be fired to manufacture the ceramic radiator of the present invention.
【００１８】本発明の方法において、ペーストは、フィ
ン部あるいはベース部いずれか、あるいは両方の互いに
接触する箇所に塗布すればよい。AlＮペーストの塗布は
パッド印刷、刷毛塗りスクリーン印刷等が好ましく用い
られる。AlＮペーストには、粘度調整の為、必要に応じ
て希釈剤、分散剤等を加えても良い。In the method of the present invention, the paste may be applied to the fin portion, the base portion, or both of the portions in contact with each other. For the application of the AlN paste, pad printing, brush coating screen printing and the like are preferably used. A diluent, a dispersant, or the like may be added to the AlN paste as needed to adjust the viscosity.
【００１９】本発明の方法では、ペーストに加える焼結
助剤の種類および添加量を選択することにより焼成温度
を調節できる。すなわち、焼結助剤を、公知のアルカリ
土類金属酸化物および希土類酸化物から選択することに
より、1400℃〜2100℃程度の焼結温度にすることが可能
である。この場合、焼成により酸化物を生成する化合物
を好適に用いることができる。In the method of the present invention, the firing temperature can be adjusted by selecting the type and amount of the sintering aid added to the paste. That is, by selecting the sintering aid from known alkaline earth metal oxides and rare earth oxides, it is possible to achieve a sintering temperature of about 1400 ° C to 2100 ° C. In this case, a compound that produces an oxide by firing can be preferably used.
【００２０】本発明のセラミックス放熱体は、ベース部
がメタライズまたはめっきされていることが好ましい。
また、メタライズおよびめっきの両方の処理が施されて
いてもよい。ベース部にメタライズ処理またはめっき処
理が施されている場合、ベース部は金属との濡れ性が向
上する。従って、半導体素子を搭載する金属枠を、ろう
付け等により容易にベース部に接合できる。このよう
に、ベース部に半導体素子を搭載する金属枠が接合され
ている場合には、ベース部はヒートシンクとしての機能
も有する。本発明のセラミックス放熱体では、ベース部
上にフィン部が配置されているので、従来のようにヒー
トシンクとフィンを樹脂接着剤、ネジ止め等で接合する
必要がない。In the ceramic radiator of the present invention, the base portion is preferably metallized or plated.
Further, both metallization and plating may be performed. When the base portion is subjected to metallizing treatment or plating treatment, the wettability with the metal of the base portion is improved. Therefore, the metal frame on which the semiconductor element is mounted can be easily joined to the base portion by brazing or the like. Thus, when the metal frame for mounting the semiconductor element is joined to the base portion, the base portion also has a function as a heat sink. In the ceramic radiator of the present invention, since the fin portion is arranged on the base portion, it is not necessary to join the heat sink and the fin with a resin adhesive, screwing or the like as in the conventional case.
【００２１】上記メタライズの主成分は、Ｗ、Mo、Au、
Ag、Pt、Ti、Pd、Cu、Ni、Al、PbまたはSnであることが
好ましく、めっきの主成分は、Au、Ag、Ni、Cr、Co、C
u、AlまたはSnであることが好ましい。メタライズの成
分としてＷ、Moが好ましいのは、これらの金属の熱膨張
係数がAlＮとほぼ等しく、メタライズ層を形成したとき
に、熱膨張係数の差により剥離したり、クラックが入る
ことがないからである。また、Au、Ag、Pt、Ti、Pd、C
u、Ni、Al、PbまたはSnは、導電性および金属との濡れ
性を向上するので好ましい。一方、めっきの場合、めっ
き層の形成し易さと、導電性および金属との濡れ性を向
上させるという点からAu、Ag、Ni、Cr、Co、Cu、Alまた
はSnが好ましい。The main components of the metallization are W, Mo, Au,
Ag, Pt, Ti, Pd, Cu, Ni, Al, Pb or Sn is preferable, and the main components of the plating are Au, Ag, Ni, Cr, Co and C.
It is preferably u, Al or Sn. W and Mo are preferred as components of the metallization, because the thermal expansion coefficients of these metals are almost the same as those of AlN, and when the metallized layer is formed, peeling or cracking does not occur due to the difference in thermal expansion coefficient. Is. Also, Au, Ag, Pt, Ti, Pd, C
u, Ni, Al, Pb or Sn is preferable because it improves conductivity and wettability with metal. On the other hand, in the case of plating, Au, Ag, Ni, Cr, Co, Cu, Al or Sn is preferable from the viewpoint of forming a plating layer easily, and improving conductivity and wettability with a metal.
【００２２】上記のメタライズの方法としては、上記の
金属の粉末を含んだペーストをスクリーン印刷、ドッテ
ィング、パッド印刷または刷毛塗り等が好ましい。ま
た、めっき層は、上記の金属を含んだめっき浴槽にベー
ス部を投入し、電解または無電解めっきで形成すること
が好ましい。As a method of the above metallization, screen printing, dotting, pad printing or brush coating of a paste containing the above metal powder is preferable. Further, the plating layer is preferably formed by electrolytic or electroless plating by placing the base portion in a plating bath containing the above metal.
【００２３】[0023]
実施例１ 本発明の方法により、本発明のAlＮ放熱体を製造した。
図１(a)および(b)を参照してその工程を説明する。図１
(a)および(b)は、本発明の方法により本発明のAlＮ放熱
体を製造する工程におけるAlＮ放熱体の立面図である。
最初に図１(a)に示すよう、50mm×50mm、厚さ２mmのAl
Ｎ焼結体のベース部１の表面に、AlＮとCaＯとを重量比
９：１で含み、さらに有機ビヒクルおよび有機溶剤を含
むペースト２を50μｍの厚さで平行線をなすよう塗布し
た。次に、図２に示す平行な溝13を有する治具10を使用
して、ベース部１に塗布したペースト２上に、フィン部
となる20mm×50mm厚さ２mmのAlＮ焼結体板３を図１(b)
に示すよう配置し、1600℃の非酸化雰囲気で焼成し、本
発明のAlＮ放熱体が完成した。Example 1 An AlN heat radiator of the present invention was manufactured by the method of the present invention.
The process will be described with reference to FIGS. 1 (a) and 1 (b). Figure 1
(a) And (b) is an elevation view of the AlN heat sink in the process of manufacturing the AlN heat sink of the present invention by the method of the present invention.
First, as shown in Fig. 1 (a), 50mm x 50mm, 2mm thick Al
A paste 2 containing AlN and CaO in a weight ratio of 9: 1 and further containing an organic vehicle and an organic solvent was applied to the surface of the base portion 1 of the N sintered body in a thickness of 50 μm so as to form parallel lines. Next, using a jig 10 having parallel grooves 13 shown in FIG. 2, an AlN sintered body plate 3 of 20 mm × 50 mm in thickness and 2 mm in thickness serving as a fin portion is formed on the paste 2 applied to the base portion 1. Figure 1 (b)
And arranged in a non-oxidizing atmosphere at 1600 ° C. to complete the AlN heat radiator of the present invention.
【００２４】上記本発明の方法で、本発明のAlＮ放熱体
を製造するのに必要なAlＮ粉末は56ｇであった。しかし
ながら、同一形状の放熱体を50mm×50mm×22mmのAlＮ焼
結体から切削および研磨加工により製造する場合、AlＮ
粉の使用量は 180ｇであった。従って、本発明により大
幅に原料費を低減することができる。また本発明によれ
ば切削および研磨加工を行わずに製品形状に加工できる
ので、加工費のコストが低減される。さらに、切削加工
時に発生するフィン部の割れや欠けもなくなるため歩留
も向上する。The AlN powder required for producing the AlN heat radiator of the present invention by the above method of the present invention was 56 g. However, if a heat radiator of the same shape is manufactured from a 50 mm × 50 mm × 22 mm AlN sintered body by cutting and polishing, AlN
The amount of powder used was 180 g. Therefore, the present invention can significantly reduce the raw material cost. Further, according to the present invention, since the product shape can be processed without performing cutting and polishing, the processing cost can be reduced. Furthermore, the yield is improved because the cracking or chipping of the fin portion that occurs during cutting is eliminated.
【００２５】上記本発明の方法で製造した本発明のAlＮ
放熱体のフィン部とベース部の接合強度を測定した。フ
ィン部に接合強度評価用の治具を設置し、引っ張り強度
を測定した結果、接合強度は 1.5kg／cm2 以上であるこ
とが判明した。AlN of the present invention produced by the method of the present invention
The joint strength between the fin portion and the base portion of the radiator was measured. As a result of installing a jig for evaluating the bonding strength on the fin and measuring the tensile strength, it was found that the bonding strength was 1.5 kg / cm 2 or more.
【００２６】また、上記本発明の方法で製造した本発明
のAlＮ放熱体に−65℃〜 150℃の熱履歴を加え15サイク
ルの熱衝撃試験に課した後、上述の方法で接合強度の測
定を行った。その結果、熱衝撃後のフィン部とベース部
強度は、 1.4kg／cm2 以上であることが判明した。The AlN radiator of the present invention manufactured by the method of the present invention was subjected to a thermal shock test of 15 cycles by applying a thermal history of -65 ° C. to 150 ° C., and then the bonding strength was measured by the above method. I went. As a result, it was found that the strength of the fin portion and the base portion after the thermal shock was 1.4 kg / cm 2 or more.
【００２７】さらに上記本発明の方法で製造した本発明
のAlＮ放熱体にSiチップを搭載したアルミナのパッケー
ジをシリコン樹脂により接着し、風速１ｍ下でチップを
発熱させ熱抵抗を測定した。その結果、本発明のAlＮ放
熱体は、θja＝ 6.5Ｋ／Ｗの熱抵抗を示した。また、比
較として、熱伝導率 120Ｗ／ｍ・ＫのAlＮ焼結体のブロ
ックから、上記本発明のAlＮ放熱体と同一形状の放熱体
を従来の切削加工により製造し、同様の評価方法によ
り、熱抵抗を測定した。その結果、従来のAlＮ放熱体の
熱抵抗は 6.6Ｋ／Ｗであり、本発明のAlＮ放熱体は、従
来のものとほとんど同じ熱特性を示すことがわかった。Further, the AlN radiator of the present invention manufactured by the above-mentioned method of the present invention was adhered with an alumina package having a Si chip mounted thereon by a silicone resin, and the chip was heated at a wind speed of 1 m to measure the thermal resistance. As a result, the AlN heat radiator of the present invention showed a thermal resistance of θ ja = 6.5 K / W. In addition, for comparison, a radiator having the same shape as the AlN radiator of the present invention was manufactured by a conventional cutting process from a block of an AlN sintered body having a thermal conductivity of 120 W / mK, and the same evaluation method was used. The thermal resistance was measured. As a result, it was found that the thermal resistance of the conventional AlN radiator is 6.6 K / W, and the AlN radiator of the present invention shows almost the same thermal characteristics as the conventional one.
【００２８】実施例２ 本発明の他の方法により、本発明の他の構成のAlＮ放熱
体を製造した。図３(a) および(b)を参照してその工程
を説明する。図３(a)および(b)は、図１(a)および(b)同
様、本発明の方法により本発明のAlＮ放熱体を製造する
工程におけるAlＮ放熱体の立面図である。最初に、図３
(a)に示すよう、60mm×60mm、厚さ2.4mmのAlＮグリーン
シート４の表面全体に、AlＮとＹ2Ｏ3とを重量比97：３
で含み、さらに有機ビヒクルおよび有機溶剤を含むペー
スト２を50μｍの厚さで塗布した。次に、一体に成形し
た24mm×60mm厚さ 2.4mmフィン部のAlＮのグリーンシー
ト５を、図３(b)に示すよう配置した後、1800℃の非酸
化雰囲気で焼成して本発明のAlＮ放熱体が完成した。Example 2 An AlN radiator having another structure of the present invention was manufactured by another method of the present invention. The process will be described with reference to FIGS. 3 (a) and 3 (b). 3 (a) and 3 (b) are elevation views of the AlN radiator in the process of manufacturing the AlN radiator of the present invention by the method of the present invention, as in FIGS. 1 (a) and 1 (b). First, Figure 3
As shown in (a), AlN and Y 2 O 3 are mixed in a weight ratio of 97: 3 on the entire surface of the AlN green sheet 4 having a size of 60 mm × 60 mm and a thickness of 2.4 mm.
And a paste 2 containing an organic vehicle and an organic solvent were applied to a thickness of 50 μm. Next, the integrally molded 24 mm x 60 mm thick 2.4 mm finned AlN green sheet 5 is placed as shown in Fig. 3 (b) and then fired in a non-oxidizing atmosphere at 1800 ° C to produce the AlN of the present invention. The radiator is completed.
【００２９】本実施例においても、本発明の方法で、本
発明のAlＮ放熱体を製造するのに必要なAlＮ粉末は56ｇ
であった。また、同一形状の放熱体を50mm×50mm×22mm
のAlＮ焼結体から切削および研磨加工により製造する場
合、AlＮ粉の使用量は 180ｇであった。本実施例のAlＮ
放熱体に対しても、実施例１と等しい特性評価試験を行
った。その結果、本実施例のAlＮ放熱体のフィン部とベ
ース部との接合強度は、 1.7kg／cm2 以上であることが
判明した。また、熱衝撃試験後のフィン部とベース部と
の接合強度は、 1.6kg／cm2 以上であることがわかっ
た。さらに熱抵抗は、θja＝ 7.8Ｋ／Ｗであり、熱伝導
率 120Ｗ／ｍ・ＫのAlＮ焼結体ブロックより切削加工で
製造した同一形状のものと等しい値を示した。Also in this example, the amount of AlN powder required to manufacture the AlN heat radiator of the present invention by the method of the present invention was 56 g.
Met. In addition, a radiator with the same shape is 50 mm × 50 mm × 22 mm
When manufactured by cutting and polishing from the AlN sintered body of No. 1, the amount of AlN powder used was 180 g. AlN of this embodiment
The same characteristic evaluation test as in Example 1 was also performed on the radiator. As a result, it was found that the bonding strength between the fin portion and the base portion of the AlN heat radiator of this example was 1.7 kg / cm 2 or more. It was also found that the joint strength between the fin portion and the base portion after the thermal shock test was 1.6 kg / cm 2 or more. Further, the thermal resistance was θ ja = 7.8 K / W, which was the same value as that of the same shape manufactured by cutting from an AlN sintered block having a thermal conductivity of 120 W / m · K.
【００３０】実施例３ 実施例１と等しい形状の本発明のAlＮ放熱体を、重量比
95：５で混合されたAlＮとＹ2Ｏ3との混合粉末を50重量
％含み、残りが有機ビヒクルと溶剤とからなるペースト
を使用して製造した。このペーストを40μｍの厚さに塗
布し、フィン部となるAlＮ板を実施例１と同様の形状に
配置した後、1600℃の非酸化雰囲気で焼成して、本発明
のAlＮ放熱体が完成した。本実施例のAlＮ放熱体フィン
に対しても、実施例１および２と同様に特性を測定し
た。その結果、熱衝撃試験前後の熱抵抗は、それぞれθ
ja＝ 6.4Ｋ／Ｗ、 7.7Ｋ／Ｗであり、ほとんど変化しな
かった。Example 3 An AlN radiator of the present invention having the same shape as in Example 1 was used in a weight ratio.
It was manufactured by using a paste containing 50% by weight of a mixed powder of AlN and Y 2 O 3 mixed at 95: 5, and the rest consisting of an organic vehicle and a solvent. This paste was applied to a thickness of 40 μm, an AlN plate to be the fin portion was arranged in the same shape as in Example 1, and then fired in a non-oxidizing atmosphere at 1600 ° C. to complete the AlN heat radiator of the present invention. . The characteristics of the AlN radiator fin of this example were measured in the same manner as in Examples 1 and 2. As a result, the thermal resistance before and after the thermal shock test is θ
en = 6.4K / W, 7.7K / W, which was almost unchanged.
【００３１】比較例１ 実施例１と等しい形状の本発明のAlＮ放熱体を、AlＮ、
Al2Ｏ3およびＹ2Ｏ3を重量比８：41：41で含み、さらに
有機ビヒクルおよび有機溶剤を含むペーストを使用して
製造した。このペーストを50μｍの厚さに塗布し、フィ
ン部となるAlＮ板を実施例１と同様の形状に配置した
後、1700℃の非酸化雰囲気で焼成して、本発明のAlＮ放
熱体が完成した。本実施例のAlＮ放熱体フィンに対して
も、実施例１〜３と同様に特性を測定した。その結果、
熱衝撃試験前後の熱抵抗は、それぞれθja＝10.6Ｋ／
Ｗ、12.5Ｋ／Ｗであり、いずれの熱抵抗も各実施例に比
較して著しく劣っていた。Comparative Example 1 An AlN heat radiator of the present invention having the same shape as that of Example 1 was replaced with AlN,
It was prepared by using a paste containing Al 2 O 3 and Y 2 O 3 in a weight ratio of 8:41:41 and further containing an organic vehicle and an organic solvent. This paste was applied to a thickness of 50 μm, an AlN plate to be the fin portion was arranged in the same shape as in Example 1, and then fired in a non-oxidizing atmosphere at 1700 ° C. to complete the AlN heat radiator of the present invention. . The characteristics of the AlN radiator fin of this example were measured in the same manner as in Examples 1-3. as a result,
The thermal resistance before and after the thermal shock test is θ ja = 10.6K /
W, 12.5 K / W, and the thermal resistance was significantly inferior to that of each example.
【００３２】比較例２ 実施例１と等しい形状の本発明のAlＮ放熱体を、AlＮお
よびＹ2Ｏ3を重量比99.95：0.05で含み、さらに有機ビ
ヒクルおよび有機溶剤を含むペーストを使用して製造し
た。このペーストを50μｍの厚さに塗布し、フィン部と
なるAlＮ板を実施例１と同様の形状に配置した後、2100
℃の非酸化雰囲気で焼成して、本発明のAlＮ放熱体が完
成した。本実施例のAlＮ放熱体フィンに対しても、実施
例１〜３と同様に特性を測定した。その結果、熱衝撃試
験前後の熱抵抗は、それぞれθja＝11.2Ｋ／Ｗ、13.1Ｋ
／Ｗであり、いずれの熱抵抗も各実施例に比較して著し
く劣っていた。Comparative Example 2 An AlN heat radiator of the present invention having the same shape as that of Example 1 was prepared using a paste containing AlN and Y 2 O 3 in a weight ratio of 99.95: 0.05, and further containing an organic vehicle and an organic solvent. did. After applying this paste to a thickness of 50 μm and arranging the AlN plate to be the fin portion in the same shape as in Example 1, 2100
The AlN heat radiator of the present invention was completed by firing in a non-oxidizing atmosphere at ℃. The characteristics of the AlN radiator fin of this example were measured in the same manner as in Examples 1-3. As a result, the thermal resistances before and after the thermal shock test were θ ja = 11.2K / W and 13.1K, respectively.
/ W, and any thermal resistance was significantly inferior to the respective examples.
【００３３】実施例４ 図４(a)〜(c)および図５を参照して、本発明のAlＮ放熱
体のさらに別の構成のものを、本発明の方法で製造する
工程を説明する。図４(a)〜(c)は、本発明の方法により
本発明のAlＮ放熱体を製造する工程におけるAlＮ放熱体
の斜視図である。最初に、図４(a)に示すよう、実施例
１で使用したものと等しい50mm×50mm、厚さ２mmのAlＮ
焼結体のベース部１の表面に、AlＮとCaＯとを重量比
９：１で含み、さらに有機ビヒクルおよび有機溶剤を含
むペースト２を50μｍの厚さで全面に塗布した。Example 4 With reference to FIGS. 4 (a) to 4 (c) and FIG. 5, a process of manufacturing the AlN radiator of still another structure of the present invention by the method of the present invention will be described. FIGS. 4 (a) to 4 (c) are perspective views of the AlN radiator in the process of manufacturing the AlN radiator of the present invention by the method of the present invention. First, as shown in FIG. 4 (a), AlN of 50 mm × 50 mm and 2 mm in thickness, which is the same as that used in Example 1.
A paste 2 containing AlN and CaO in a weight ratio of 9: 1 and further containing an organic vehicle and an organic solvent was applied to the entire surface of the base portion 1 of the sintered body in a thickness of 50 μm.
【００３４】次に、図５に示す溝13を有する治具10を使
用して、ベース部１に塗布したペースト２上に、図４
(b)に示す形状に加工されたAlＮ焼結体板３を図４(c)に
示すよう配置し、1600℃の非酸化雰囲気で焼成して本発
明のAlＮ放熱体が完成した。Next, using the jig 10 having the groove 13 shown in FIG. 5, the paste 2 applied to the base portion 1 is applied to the paste 2 shown in FIG.
The AlN sintered body plate 3 processed into the shape shown in (b) is arranged as shown in FIG. 4 (c) and fired in a non-oxidizing atmosphere at 1600 ° C. to complete the AlN heat radiator of the present invention.
【００３５】本実施例において、本発明の方法で、本発
明のAlＮ放熱体を製造するのに必要なAlＮ粉末は82ｇで
あった。また、同一形状の放熱体を50mm×50mm×25mmの
AlＮ焼結体から切削および研磨加工により製造する場
合、AlＮ粉の使用量は 205ｇであった。従って、本発明
の方法により、大幅に使用原料を少なくすることができ
る。また本発明によれば切削および研磨加工を行わずに
製品形状に加工できるので、加工費のコストが低減され
る。さらに、切削加工時に発生するフィン部の割れや欠
けもなくなるため歩留も向上する。In this example, the amount of AlN powder required to manufacture the AlN heat radiator of the present invention by the method of the present invention was 82 g. In addition, a radiator with the same shape of 50 mm × 50 mm × 25 mm
When manufactured from an AlN sintered body by cutting and polishing, the amount of AlN powder used was 205 g. Therefore, the method of the present invention can significantly reduce the amount of raw materials used. Further, according to the present invention, since the product shape can be processed without performing cutting and polishing, the processing cost can be reduced. Furthermore, the yield is improved because the cracking or chipping of the fin portion that occurs during cutting is eliminated.
【００３６】本実施例のAlＮ放熱体に対しても、実施例
１と等しい特性評価試験を行った。その結果、本実施例
のAlＮ放熱体のフィン部とベース部との接合強度は、
1.8kg／cm2 以上であることが判明した。さらに熱抵抗
は、θja＝ 6.9Ｋ／Ｗであり、本実施例のAlＮ放熱体に
使用したものと等しい熱伝導率を有するAlＮ焼結体ブロ
ックより切削加工で製造した同一形状のものと等しい値
を示した。さらに、本発明に従えば、図６に示すよう
な、円柱状のフィン部30がベース部１上に配置された複
雑な形状で、AlＮ焼結体で作製することが困難である放
熱体も容易に作製可能である。The same characteristic evaluation test as in Example 1 was conducted on the AlN heat radiator of this example. As a result, the bonding strength between the fin portion and the base portion of the AlN heat radiator of this example is
It was found to be 1.8 kg / cm 2 or more. Further, the thermal resistance is θ ja = 6.9 K / W, which is equal to that of the same shape manufactured by cutting from the AlN sintered body block having the same thermal conductivity as that used for the AlN heat radiator of this embodiment. Showed the value. Further, according to the present invention, as shown in FIG. 6, a radiator having a complicated shape in which the cylindrical fin portion 30 is arranged on the base portion 1 and which is difficult to be made of an AlN sintered body is also used. It can be easily manufactured.
【００３７】実施例５ 図７(a)〜(c)を参照して、本発明のAlＮ放熱体のさらに
別の構成のものを、本発明の方法で製造する工程を説明
する。図７(a)〜(c)は、本発明の方法により本発明のAl
Ｎ放熱体を製造する工程におけるAlＮ放熱体の断面図で
ある。最初に、図７(a)に示すよう、実施例１で使用し
たものと等しい50mm×50mm、厚さ２mmのAlＮ焼結体のベ
ース部１の表面に、AlＮとCaＯとを重量比85：15で含
み、さらに有機ビヒクルおよび有機溶剤を含むペースト
２を50μｍの厚さで平行線をなすよう塗布した。また、
ベース部１の裏面には、Ｗを主成分とし、有機ビヒクル
および有機溶剤を加えてなるペースト６を45μｍの厚さ
に塗布した。Example 5 With reference to FIGS. 7 (a) to 7 (c), a process of manufacturing an AlN radiator of still another structure according to the present invention by the method of the present invention will be described. 7 (a) to 7 (c) show the results of the method of the present invention
It is sectional drawing of the AlN heat sink in the process of manufacturing N heat sink. First, as shown in FIG. 7 (a), AlN and CaO are mixed in a weight ratio of 85: on the surface of the base portion 1 of an AlN sintered body of 50 mm × 50 mm and a thickness of 2 mm, which is the same as that used in Example 1. Paste 2 containing 15 and further containing an organic vehicle and an organic solvent was applied in a thickness of 50 μm so as to form parallel lines. Also,
On the back surface of the base portion 1, a paste 6 containing W as a main component and containing an organic vehicle and an organic solvent was applied to a thickness of 45 μm.
【００３８】次に、実施例１と同様、図２に示す平行な
溝13を有する治具10を使用して、ベース部１に塗布した
ペースト２上に、フィン部となる20mm×50mm厚さ２mmの
AlＮ焼結体板３を図７(b)に示すよう配置し、1650℃の
非酸化雰囲気で焼成した。この焼成により、ベース部１
の裏面に塗布されたペースト６は、メタライズ層になっ
た。このメタライズ層上に厚さ５μｍのNiメッキを施
し、さらに金属枠８を設けた後、Siチップ７を搭載し
た。Next, using the jig 10 having the parallel grooves 13 shown in FIG. 2 as in the first embodiment, the paste 2 applied to the base portion 1 is coated with a fin portion having a thickness of 20 mm × 50 mm. 2 mm
The AlN sintered body plate 3 was arranged as shown in FIG. 7 (b) and fired at 1650 ° C. in a non-oxidizing atmosphere. By this firing, the base portion 1
The paste 6 applied to the back surface of the was a metallized layer. The metallized layer was plated with Ni to a thickness of 5 μm, a metal frame 8 was further provided, and then the Si chip 7 was mounted.
【００３９】[0039]
【発明の効果】以上詳述のように、本発明に従えば、ベ
ース部とフィン部とが別体で、互いに接合されて構成さ
れるAlＮ放熱体およびその製造方法が提供される。本発
明の方法で製造される本発明のAlＮ放熱体は、低コスト
で製造可能であり、また生産効率も高く、割れや欠け等
の不良発生の確率が低いので、歩留りが高く、信頼性も
高い。As described in detail above, according to the present invention, there is provided an AlN heat radiator constituted by a base portion and a fin portion which are separate bodies and bonded to each other, and a method for manufacturing the same. The AlN heat radiator of the present invention manufactured by the method of the present invention can be manufactured at low cost, has high production efficiency, and has a low probability of occurrence of defects such as cracks and chips, and thus has high yield and reliability. high.
【図１】(a)および(b)は、本発明の方法で本発明のAlＮ
放熱体を製造する工程を説明する図である。FIG. 1 (a) and (b) show the method of the present invention, wherein
It is a figure explaining the process of manufacturing a radiator.
【図２】図１(a)および(b)に示した本発明の方法で本発
明のAlＮ放熱体を製造する場合に使用する治具の斜視図
である。FIG. 2 is a perspective view of a jig used to manufacture the AlN heat radiator of the present invention by the method of the present invention shown in FIGS. 1 (a) and 1 (b).
【図３】(a)および(b)は、本発明の他の方法で本発明の
他の構成のAlＮ放熱体を製造する工程を説明する図であ
る。3 (a) and 3 (b) are views for explaining steps of manufacturing an AlN heat radiator having another structure of the present invention by another method of the present invention.
【図４】(a)〜(c)は、本発明のさらに別の方法で本発明
のさらに別のAlＮ放熱体を製造する工程を説明する図で
ある。4 (a) to 4 (c) are views for explaining a process of manufacturing yet another AlN heat radiator of the present invention by still another method of the present invention.
【図５】図４(a)〜(c)に示した本発明の方法で本発明の
AlＮ放熱体を製造する場合に使用する治具の斜視図であ
る。FIG. 5 shows the method of the present invention shown in FIGS. 4 (a) to (c).
It is a perspective view of the jig used when manufacturing an AlN heat radiator.
【図６】本発明のさらに別のAlＮ放熱体の斜視図であ
る。FIG. 6 is a perspective view of still another AlN heat radiator of the present invention.
【図７】(a)〜(c)は、本発明のさらに別の方法で本発明
のさらに別のAlＮ放熱体を製造する工程を説明する図で
ある。7 (a) to 7 (c) are views for explaining a process of manufacturing yet another AlN heat radiator of the present invention by still another method of the present invention.
【図８】(a)および(b)は、従来の方法で従来のAlＮ放熱
体を製造する工程を説明する図である。8 (a) and 8 (b) are views for explaining steps of manufacturing a conventional AlN heat radiator by a conventional method.
１ ベース部 ２ ペースト ３ AlＮ焼結体板 ４ ベース部のAlＮグリーンシート ５ フィン部のAlＮグリーンシート ７ 半導体素子 ８ 金属枠 1 Base Part 2 Paste 3 AlN Sintered Body Plate 4 Base Part AlN Green Sheet 5 Fin Part AlN Green Sheet 7 Semiconductor Element 8 Metal Frame
フロントページの続き (72)発明者 仲田 博彦 兵庫県伊丹市昆陽北一丁目１番１号 住友 電気工業株式会社伊丹製作所内Front Page Continuation (72) Inventor Hirohiko Nakata 1-1-1 Kunyokita, Itami City, Hyogo Prefecture Sumitomo Electric Industries, Ltd. Itami Works
Claims (12)
成された、板状のベース部と、ベース部の一面上に配置
された複数のフィン部とを備える半導体用セラミックス
放熱体において、ベース部とフィン部とが別々の部材で
あり、接合手段により接合されていることを特徴とする
半導体用セラミックス放熱体。1. A ceramics heat radiator for semiconductor, comprising a plate-shaped base portion each made of a sintered body containing AlN as a main component, and a plurality of fin portions arranged on one surface of the base portion, A ceramic heat radiator for semiconductors, characterized in that the base portion and the fin portion are separate members and are joined by joining means.
ーストの焼成体であることを特徴とする請求項１に記載
の半導体用セラミックス放熱体。2. The ceramic heat radiator for semiconductors according to claim 1, wherein the joining means is a fired body of a paste containing AlN as a main component.
99.9重量％以下のAlＮを含むことを特徴とする請求項２
に記載の半導体用セラミックス放熱体。3. The fired body of the paste is 10% by weight or more.
The AlN content of 99.9% by weight or less is included.
The ceramics heat radiator for semiconductors according to.
れていることを特徴とする請求項１〜３のいずれか１項
に記載の半導体用セラミックス放熱体。4. The ceramic heat radiator for semiconductor according to claim 1, wherein the fin portion is composed of a plurality of members.
ていることを特徴とする請求項１〜３のいずれか１項に
記載の半導体用セラミックス放熱体。5. The ceramic heat radiator for a semiconductor according to claim 1, wherein the fin portion is formed of an integral member.
たはめっきされていることを特徴とする請求項１〜５の
いずれか１項に記載の半導体用セラミックス放熱体。6. The ceramics heat radiator for semiconductor according to claim 1, wherein the base portion is metallized and / or plated.
u、Ag、Pt、Ti、Pd、Cu、Ni、Al、PbまたはSnであるこ
とを特徴とする請求項６に記載の半導体用セラミックス
放熱体。7. The main component of the metallization is W, Mo, A
The ceramic heat radiator for a semiconductor according to claim 6, which is u, Ag, Pt, Ti, Pd, Cu, Ni, Al, Pb or Sn.
o、Cu、Ag、AlまたはSnであることを特徴とする請求項
６または７に記載の半導体用セラミックス放熱体。8. The main component of the plating is Ni, Au, Cr, C
The ceramic heat radiator for a semiconductor according to claim 6 or 7, which is o, Cu, Ag, Al or Sn.
成された、板状のベース部と、該ベース部の一面上に配
置された複数のフィン部とを備える半導体用セラミック
ス放熱体の製造方法において、互いに別の部材からなる
ベース部およびフィン部の少なくとも一方にAlＮを主成
分とするペーストを塗布する工程と、ベース部上にフィ
ン部を配置する工程と、ペーストを焼成してベース部と
フィン部とを接合する工程とを含むことを特徴とする製
造方法。9. A ceramic heat dissipation body for semiconductor, comprising: a plate-shaped base portion each made of a sintered body containing AlN as a main component; and a plurality of fin portions arranged on one surface of the base portion. In the manufacturing method, a step of applying a paste containing AlN as a main component to at least one of a base portion and a fin portion formed of different members; a step of disposing the fin portion on the base portion; And a step of joining the fin portion to the fin portion.
が、AlＮを主成分とする焼結体部材であることを特徴と
する請求項９に記載の製造方法。10. The manufacturing method according to claim 9, wherein the members of the base portion and the fin portion are sintered body members containing AlN as a main component.
少なくとも一方が、AlＮを主成分とする未焼結の成形体
であり、前記ペーストを焼成する工程で同時に焼成され
ることを特徴とする請求項９に記載の製造方法。11. At least one of the members of the base portion and the fin portion is an unsintered compact having AlN as a main component, and is fired at the same time in the step of firing the paste. Item 9. The manufacturing method according to Item 9.
機成分が、10重量％以上99.9重量％以下のAlＮを含むこ
とを特徴とする請求項９〜11のいずれか１項に記載の製
造方法。12. The manufacturing method according to claim 9, wherein the inorganic component of the paste containing AlN as a main component contains 10% by weight or more and 99.9% by weight or less of AlN. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21231693A JP3239549B2 (en) | 1993-08-04 | 1993-08-04 | Ceramic radiator for semiconductor and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21231693A JP3239549B2 (en) | 1993-08-04 | 1993-08-04 | Ceramic radiator for semiconductor and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0750369A true JPH0750369A (en) | 1995-02-21 |
| JP3239549B2 JP3239549B2 (en) | 2001-12-17 |
Family
ID=16620534
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21231693A Expired - Fee Related JP3239549B2 (en) | 1993-08-04 | 1993-08-04 | Ceramic radiator for semiconductor and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3239549B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7211153B2 (en) | 2001-04-13 | 2007-05-01 | Sumitomo Electric Industries, Ltd. | Ceramic joined body, substrate holding structure and substrate processing apparatus |
| JP2007115937A (en) * | 2005-10-21 | 2007-05-10 | Mitsubishi Materials Corp | Cooler and method of manufacturing the same |
| JP2020092239A (en) * | 2018-12-07 | 2020-06-11 | Ｊｘ金属株式会社 | Heat sink, semiconductor module, and manufacturing method of heat sink |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102163518B1 (en) * | 2018-08-16 | 2020-10-08 | 이향순 | heat sink of minimization heat-transfer loss |
-
1993
- 1993-08-04 JP JP21231693A patent/JP3239549B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7211153B2 (en) | 2001-04-13 | 2007-05-01 | Sumitomo Electric Industries, Ltd. | Ceramic joined body, substrate holding structure and substrate processing apparatus |
| JP2007115937A (en) * | 2005-10-21 | 2007-05-10 | Mitsubishi Materials Corp | Cooler and method of manufacturing the same |
| JP4654877B2 (en) * | 2005-10-21 | 2011-03-23 | 三菱マテリアル株式会社 | Manufacturing method of cooler |
| JP2020092239A (en) * | 2018-12-07 | 2020-06-11 | Ｊｘ金属株式会社 | Heat sink, semiconductor module, and manufacturing method of heat sink |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3239549B2 (en) | 2001-12-17 |
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