JPH0747866Y2 - Plasma processing device - Google Patents
Plasma processing deviceInfo
- Publication number
- JPH0747866Y2 JPH0747866Y2 JP1989061437U JP6143789U JPH0747866Y2 JP H0747866 Y2 JPH0747866 Y2 JP H0747866Y2 JP 1989061437 U JP1989061437 U JP 1989061437U JP 6143789 U JP6143789 U JP 6143789U JP H0747866 Y2 JPH0747866 Y2 JP H0747866Y2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- sample holder
- plasma processing
- temperature
- holder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Description
【考案の詳細な説明】 （産業上の利用分野） 本考案は試料（半導体ウェハ）表面のエッチングやアッ
シング等を行うプラズマ処理装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial field of application) The present invention relates to a plasma processing apparatus for etching or ashing a sample (semiconductor wafer) surface.
（従来の技術） プラズマ処理装置を用いてエッチング等を行う場合、処
理速度及び処理後の製品の良否は専ら使用する反応ガス
の種類、チャンバー内の圧力及び試料の温度によって決
定される。(Prior Art) When etching or the like is performed using a plasma processing apparatus, the processing speed and the quality of the processed product are determined by the type of reaction gas used, the pressure in the chamber, and the temperature of the sample.
このように処理中の試料の温度は重要な処理条件の１つ
であるため従来から、試料を載せる試料台内部にヒータ
を埋設したり、温水や冷却水を通すようにしている。Thus, since the temperature of the sample being processed is one of the important processing conditions, conventionally, a heater is embedded inside the sample table on which the sample is placed, or hot water or cooling water is passed.
（考案が解決しようとする課題） 上述した従来の温度測定手段にあっては、試料の温度を
直接測定するものではないので、処理中の実際の試料温
度と異なり、処理の再現性が困難で不安定な処理とな
る。(Problems to be Solved by the Invention) In the above-mentioned conventional temperature measuring means, since the temperature of the sample is not directly measured, unlike the actual sample temperature during processing, reproducibility of processing is difficult. The process becomes unstable.
このため赤外線を利用した非接触の温度計によって試料
の温度を測定することが考えられるが、チャンバーの温
度やプラズマの温度などを測定してしまうなど、正確な
試料温度を測定するのが困難である。Therefore, it is possible to measure the sample temperature with a non-contact thermometer using infrared rays, but it is difficult to measure the sample temperature accurately, such as measuring the chamber temperature and plasma temperature. is there.
（課題を解決するための手段） 上記課題を解決すべく本考案は、試料台は試料押えに対
して上下動して試料を試料押え下面に押しつけ、この試
料押えは環状に形成して装置本体の開口部に固着すると
共に、試料押えには試料表面に接触した試料の温度を直
接測定する温度センサーを均等な間隔で複数個埋設し
た。(Means for Solving the Problems) In order to solve the above problems, according to the present invention, the sample holder moves up and down with respect to the sample holder to press the sample against the lower surface of the sample holder, and the sample holder is formed in an annular shape to form the main body of the apparatus. A plurality of temperature sensors for directly measuring the temperature of the sample in contact with the surface of the sample were embedded in the sample retainer while being fixed to the opening.
（作用） プラズマ処理装置によって試料を処理している間は、試
料押えに均等な間隔で複数個埋設した温度センサーが試
料に直接接触しているため、試料の実際の温度を正確に
測定でき、また温度センサーは試料押えに埋設されてい
るので、プラズマから保護される。(Function) While the sample is being processed by the plasma processing apparatus, a plurality of temperature sensors embedded in the sample holder at equal intervals are in direct contact with the sample, so that the actual temperature of the sample can be accurately measured. Further, since the temperature sensor is embedded in the sample holder, it is protected from plasma.
（実施例） 以下に本考案の実施例を添付図面に基いて説明する。(Embodiment) An embodiment of the present invention will be described below with reference to the accompanying drawings.
第１図は本考案に係るプラズマ処理装置の一例であるマ
イクロ波プラズマエッチング装置の断面図、第２図は試
料押えを下方から見た斜視図である。FIG. 1 is a sectional view of a microwave plasma etching apparatus which is an example of a plasma processing apparatus according to the present invention, and FIG. 2 is a perspective view of a sample holder as seen from below.
マイクロ波プラズマエッチング装置はアースされた装置
本体１に開口２及び真空引き用の通路３を形成し、この
通路３よりも外側の装置本体１上面に合成石英からなる
チャンバー４を固定している。また装置本体１の開口２
内方には試料としての半導体ウェハ５を載置する試料台
６を昇降自在に設け、この試料台６を13.56MHzの高周波
電源７に接続している。In the microwave plasma etching apparatus, an opening 2 and a passage 3 for evacuation are formed in a grounded apparatus body 1, and a chamber 4 made of synthetic quartz is fixed to the upper surface of the apparatus body 1 outside the passage 3. Also, the opening 2 of the device body 1
A sample table 6 on which a semiconductor wafer 5 as a sample is placed is provided inwardly so as to be vertically movable, and the sample table 6 is connected to a high frequency power supply 7 of 13.56 MHz.
一方チャンバー４には反応ガスの導入管８が接続される
とともに導波管９にて囲まれ、2.45GHzにマイクロ波発
振器10からのマイクロ波によってチャンバー４内を放電
空間とし、更に導波管９の外側にはマイクロ波電界に直
交する方向の磁場を発生するコイル11を配置している。On the other hand, a reaction gas introducing pipe 8 is connected to the chamber 4 and is surrounded by a waveguide 9, and the inside of the chamber 4 is made into a discharge space by a microwave from a microwave oscillator 10 at 2.45 GHz. A coil 11 for generating a magnetic field in a direction orthogonal to the microwave electric field is arranged outside the.
また前記開口２の上端には環状の試料押え12を固着して
いる。試料押え12には第２図に示すように下面に露出す
る線状の温度センサー13…を均等な間隔で複数個埋設
し、ウェハ５を載置した試料台６を上昇させ、ウェハ５
の上面を試料押え12下面に押し付け、温度センサー13…
に直接接触せしめ、この複数個の温度センサー13…によ
って表面温度を正確に測定し、ノイズカットフィルター
14を通して表示器15で表示するようにしている。An annular sample holder 12 is fixed to the upper end of the opening 2. As shown in FIG. 2, a plurality of linear temperature sensors 13 exposed on the lower surface are embedded in the sample holder 12 at equal intervals, and the sample table 6 on which the wafer 5 is placed is lifted to move the wafer 5
The upper surface of the sample holder is pressed against the lower surface of the sample holder 12, and the temperature sensor 13 ...
The surface temperature is accurately measured by the temperature sensors 13 ...
The display 15 is used to display through 14.
尚、実施例にあっては試料押えを装置本体１の開口２周
縁に固設したが、試料押えを単独で昇降動可能としても
よい。また本考案に係るプラズマ処理装置としてはマイ
クロ波プラズマエッチング装置に限らず、チャンバー内
に上部電極と下部電極からなる平行平板電極を配置し、
ウェハを載置する下部電極を高周波電源に接続し、上部
電極をアースしたRIE（リアクティブイオンエッチン
グ）装置又は下部電極をアースし上部電極を高周波電源
に接続したプラズマ処理装置等であってもよい。Although the sample retainer is fixed to the periphery of the opening 2 of the apparatus main body 1 in the embodiment, the sample retainer may be independently movable up and down. The plasma processing apparatus according to the present invention is not limited to the microwave plasma etching apparatus, and parallel plate electrodes composed of an upper electrode and a lower electrode are arranged in the chamber.
It may be a RIE (reactive ion etching) device in which the lower electrode on which the wafer is placed is connected to a high frequency power supply and the upper electrode is grounded, or a plasma processing device in which the lower electrode is grounded and the upper electrode is connected to a high frequency power supply. .
（考案の効果） 以上に説明したように本考案によれば、試料押えを環状
に形成して装置本体の開口部に固着したので、試料を環
状の試料押え全体でしっかりと固定することが出来、信
頼性が高い。(Effect of the Invention) As described above, according to the present invention, since the sample holder is formed in an annular shape and fixed to the opening of the apparatus main body, the sample can be firmly fixed in the entire annular sample holder. , Reliable.
又、試料押えには試料表面に接触した試料の温度を直接
測定する温度センサーを埋設したので、プラズマ処理中
の試料の温度を直接測定することができ、且つ温度セン
サーは均等な間隔で複数個設けたので、正確な温度管理
を行なうことができる。In addition, since the temperature sensor that directly measures the temperature of the sample that is in contact with the sample surface is embedded in the sample holder, the temperature of the sample during plasma processing can be measured directly, and there are multiple temperature sensors at even intervals. Since it is provided, accurate temperature control can be performed.
更に温度センサーは試料押え内に埋設され、チャンバー
と反対側の試料押えの下面に露出して試料に接触し、且
つプラズマ処理時のみ試料台を試料押えに対して上下動
して試料を試料押えに押しつけるようにしているので、
温度センサーがチャンバー内のプラズマによるダメージ
を受けない。Further, the temperature sensor is embedded in the sample holder, exposed on the lower surface of the sample holder on the side opposite to the chamber and in contact with the sample, and the sample table is moved up and down with respect to the sample holder only during plasma processing to hold the sample. Since I am trying to press it on
The temperature sensor is not damaged by the plasma inside the chamber.
第１図は本考案に係るプラズマ処理装置の断面図、第２
図は試料押えを下方から見た斜視図である。 尚、図面中１は装置本体、２は開口、４はチャンバー、
５は試料、６は試料台、12は試料押え、13は温度センサ
ーである。FIG. 1 is a sectional view of a plasma processing apparatus according to the present invention, and FIG.
The figure is a perspective view of the sample holder as viewed from below. In the drawing, 1 is a device main body, 2 is an opening, 4 is a chamber,
5 is a sample, 6 is a sample stand, 12 is a sample holder, and 13 is a temperature sensor.
───────────────────────────────────────────────────── フロントページの続き (72)考案者 斎藤 丈夫 神奈川県高座郡寒川町一之宮1280 (56)参考文献 特開 昭61−32510（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Takeo Saito 1280 Ichinomiya, Samukawa-cho, Takaza-gun, Kanagawa (56) Reference JP-A-61-32510 (JP, A)
Claims (1)
を載置するとともにこの試料５を試料押え12にて押えつ
けた状態でエッチング等の処理を行うようにしたプラズ
マ処理装置において、前記試料台６は試料押え12に対し
て上下動して試料５を前記試料押え12下面に押しつけ、
この試料押え12は環状に形成して装置本体１の開口部２
に固着すると共に、試料押え12には試料５表面に接触し
た試料５の温度を直接測定する温度センサー13を均等な
間隔で複数個埋設していることを特徴とするプラズマ処
理装置。1. A sample 5 is placed on a sample table 6 facing the chamber 4.
In the plasma processing apparatus in which the sample 5 is placed on the sample holder 12 and the sample 5 is held by the sample holder 12, the sample holder 6 moves up and down with respect to the sample holder 12 in the plasma processing apparatus. Is pressed against the lower surface of the sample retainer 12,
The sample holder 12 is formed in an annular shape and is formed in the opening 2 of the apparatus main body 1.
A plasma processing apparatus characterized in that a plurality of temperature sensors 13 for directly measuring the temperature of the sample 5 contacting the surface of the sample 5 are embedded in the sample holder 12 at equal intervals while being fixed to the sample holder 12.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989061437U JPH0747866Y2 (en) | 1989-05-26 | 1989-05-26 | Plasma processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989061437U JPH0747866Y2 (en) | 1989-05-26 | 1989-05-26 | Plasma processing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH031531U JPH031531U (en) | 1991-01-09 |
| JPH0747866Y2 true JPH0747866Y2 (en) | 1995-11-01 |
Family
ID=31589686
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989061437U Expired - Lifetime JPH0747866Y2 (en) | 1989-05-26 | 1989-05-26 | Plasma processing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0747866Y2 (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6132510A (en) * | 1984-07-25 | 1986-02-15 | Hitachi Ltd | Temperature controlling mechanism for substrate |
-
1989
- 1989-05-26 JP JP1989061437U patent/JPH0747866Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH031531U (en) | 1991-01-09 |
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