JPS57191504A - Strain measuring method - Google Patents

Strain measuring method

Info

Publication number
JPS57191504A
JPS57191504A JP7659881A JP7659881A JPS57191504A JP S57191504 A JPS57191504 A JP S57191504A JP 7659881 A JP7659881 A JP 7659881A JP 7659881 A JP7659881 A JP 7659881A JP S57191504 A JPS57191504 A JP S57191504A
Authority
JP
Japan
Prior art keywords
semiconductor material
measured
quarter
infrared
strain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7659881A
Other languages
Japanese (ja)
Inventor
Susumu Hioki
Makoto Shimaoka
Tetsuo Kumazawa
Tatsuji Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7659881A priority Critical patent/JPS57191504A/en
Publication of JPS57191504A publication Critical patent/JPS57191504A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/16—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
    • G01B11/18—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge using photoelastic elements

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Strength Of Materials By Application Of Mechanical Stress (AREA)

Abstract

PURPOSE:To measure strain even at high temperature by joining a semiconductor material to the surface of a body to be measured, and detecting optical elastic fringes formed by an infrared-ray optical elastic method. CONSTITUTION:To a body 3 to be measured such as an electrode substrate, a semiconductor material 1 of silicon, etc., is joined by using a joining material 2 of solder, etc. Infrared rays from an infrared-ray source 4 pass through a polarizing plate 5 and a quarter-wavelength plate 6 to strike the semiconductor material at right angles. since the infrared rays are transmitted through the semiconductor material, they are reflected by the connecting material 2, and then passed through a quarter-wavelength plate 7 and a polarizing plate 8 to form an image. An image of a fringe pattern by an optical elastic effect is formed on the semiconductor material by adjusting the angles of the polarizing plates and quarter-wavelength plates, thus measuring the strain distribution of the body to be measured and the size of strain. Those measurements are taken even in the stages of cooling and heating in the manufacture of a semiconductor elements and even an extremely small part is measured.
JP7659881A 1981-05-22 1981-05-22 Strain measuring method Pending JPS57191504A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7659881A JPS57191504A (en) 1981-05-22 1981-05-22 Strain measuring method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7659881A JPS57191504A (en) 1981-05-22 1981-05-22 Strain measuring method

Publications (1)

Publication Number Publication Date
JPS57191504A true JPS57191504A (en) 1982-11-25

Family

ID=13609745

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7659881A Pending JPS57191504A (en) 1981-05-22 1981-05-22 Strain measuring method

Country Status (1)

Country Link
JP (1) JPS57191504A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61253436A (en) * 1985-05-02 1986-11-11 Hitachi Ltd Method and apparatus for measuring photoelasticity
JP2020026992A (en) * 2018-08-10 2020-02-20 Ｊｆｅエンジニアリング株式会社 Stress evaluation method
JP2021183932A (en) * 2020-05-22 2021-12-02 株式会社島津製作所 Strain distribution measurement system and strain distribution measurement method
CN113834527A (en) * 2021-09-18 2021-12-24 重庆大学 Crimping type power semiconductor structure and internal pressure online measurement method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61253436A (en) * 1985-05-02 1986-11-11 Hitachi Ltd Method and apparatus for measuring photoelasticity
JP2020026992A (en) * 2018-08-10 2020-02-20 Ｊｆｅエンジニアリング株式会社 Stress evaluation method
JP2021183932A (en) * 2020-05-22 2021-12-02 株式会社島津製作所 Strain distribution measurement system and strain distribution measurement method
CN113834527A (en) * 2021-09-18 2021-12-24 重庆大学 Crimping type power semiconductor structure and internal pressure online measurement method thereof

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