JPS6381927A - Etching device - Google Patents
Etching deviceInfo
- Publication number
- JPS6381927A JPS6381927A JP22729786A JP22729786A JPS6381927A JP S6381927 A JPS6381927 A JP S6381927A JP 22729786 A JP22729786 A JP 22729786A JP 22729786 A JP22729786 A JP 22729786A JP S6381927 A JPS6381927 A JP S6381927A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- wafer
- vacuum container
- electrode
- processed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title claims abstract description 24
- 239000000498 cooling water Substances 0.000 claims abstract description 5
- 230000007246 mechanism Effects 0.000 claims description 9
- 230000007723 transport mechanism Effects 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims 1
- 238000005259 measurement Methods 0.000 claims 1
- 239000000376 reactant Substances 0.000 claims 1
- 230000032258 transport Effects 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 10
- 238000012360 testing method Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 2
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 24
- 238000001312 dry etching Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000012806 monitoring device Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000012212 insulator Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明はエツチング装置に関し、特にエツチング終了後
の被処理物の温度を一定時間内に自動的に測定し得るド
ライエツチング装置に係わる。[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) The present invention relates to an etching apparatus, and more particularly to a dry etching apparatus that can automatically measure the temperature of a workpiece within a certain period of time after etching is completed. related to.
（従来の技術）
周知の如く、半導体ウェハの高集積化が進むにつれて素
子の微細化技術が盛んになり、エツチング中のウェハの
温度測定が望まれていた。しかるに、従来は、ウェハの
温度許容範囲が広いということ及びウェハの温度測定が
困難であるという理由により、エツチング中のウェハの
温度を測定することはなかった。その代わり、従来は、
ウェハをエツチングするための電極にウェハを置き、こ
の電極に水を循環させこの水を温水器等を利用して温度
制御を行なっていた。(Prior Art) As is well known, as semiconductor wafers become more highly integrated, element miniaturization technology becomes more popular, and it has been desired to measure the temperature of a wafer during etching. However, conventionally, the temperature of the wafer during etching has not been measured because of the wide temperature tolerance range of the wafer and because it is difficult to measure the temperature of the wafer. Instead, traditionally,
A wafer is placed on an electrode for etching, water is circulated through this electrode, and the temperature of this water is controlled using a water heater or the like.
しかしながら、従来のエツチング装置によれば、前記電
極を一定温度に保ことは可能であるが、ウェハ自体のエ
ツチングによる温度変化を把握することはできない。し
かし、半導体の高集積化が進むにつれ、ウェハをエツチ
ングした時のエツチング形状の制御やエツチングの再現
性が製品の歩留りに影響を及ぼす。しかるに、エツチン
グ形状やエツチングの再現性は、エツチング中のウェハ
の温度に大きく左右する為、従来の電極の温度管理だけ
では各々のウェハの管理が十分に行なえなかった。However, according to the conventional etching apparatus, although it is possible to maintain the electrode at a constant temperature, it is not possible to grasp the temperature change due to etching of the wafer itself. However, as semiconductors become more highly integrated, the control of the etched shape and the reproducibility of etching when etching a wafer affect the yield of products. However, since the etched shape and etching reproducibility are greatly affected by the temperature of the wafer during etching, each wafer cannot be adequately controlled by conventional electrode temperature control alone.
（発明が解決しようとする問題点）
本発明は上記事情に鑑みてなされたもので、エツチング
後一定時間経過した被処理物の温度を真空容器の外で測
定することにより、真空容器内の被処理物の濃度を制御
し、十分な被処理物管理をなしえるエツチング装置を提
供することを目的とする。(Problems to be Solved by the Invention) The present invention has been made in view of the above circumstances, and by measuring the temperature of the processed material outside the vacuum container after a certain period of time has passed after etching, the temperature of the processed material inside the vacuum container is measured. It is an object of the present invention to provide an etching apparatus that can control the concentration of the processed material and perform sufficient management of the processed material.
［発明の構成］
（問題点を解決するための手段と作用）本発明は、反応
ガス用の導入管及び排気管を夫々有する真空容器と、こ
の真空容器内に設けられ上部に被処理物が載置される第
１電極と、この第１Ｎ極に対向して配置された第２Ｎ極
と、前記第１電極に高周波電力を印加する電源と、前記
被処理物を真空容器の外まで搬送する搬送手段と、エツ
チング終了後一定時間経過した被処理物の温度を測定す
る測定手段とを具備することを特徴とする。ここで、温
度を測定する測定手段としては、熱電対等を用いた接触
型温度測定器あるいは光等を利用した非接触型温度測定
器が挙げられる。本発明によれば、こうした温度測定器
を用いて真空容器の外に搬送した被処理物の温度を測定
することにより、真空容器内の被処理物の温度をテスト
温度測定したデータに基づいて予測し、この結果により
冷却器内の冷却水の温度を調節し、被処理物の品質の管
理を十分できる。[Structure of the Invention] (Means and Effects for Solving the Problems) The present invention includes a vacuum container having an inlet pipe and an exhaust pipe for a reaction gas, and a vacuum container provided in the vacuum container and having an object to be processed in the upper part. A first electrode to be placed, a second N-pole placed opposite to the first N-pole, a power source for applying high-frequency power to the first electrode, and transporting the object to be processed to the outside of the vacuum container. The present invention is characterized by comprising a conveying means and a measuring means for measuring the temperature of the object to be processed after a predetermined period of time has elapsed after completion of etching. Here, examples of the measuring means for measuring temperature include a contact temperature measuring device using a thermocouple or the like, or a non-contact temperature measuring device using light or the like. According to the present invention, by measuring the temperature of the processed material transported outside the vacuum container using such a temperature measuring device, the temperature of the processed material inside the vacuum container is predicted based on the data of the test temperature measurement. However, based on this result, the temperature of the cooling water in the cooler can be adjusted, and the quality of the processed material can be adequately controlled.
（実施例）
以下、本発明の一実施例を第１図及び第２図を参照して
訳明する。ここで、第１図は本発明に係るドライエツチ
ング装置の説明図、第２図は第１図の要部の拡大図であ
る。(Example) Hereinafter, an example of the present invention will be explained with reference to FIGS. 1 and 2. Here, FIG. 1 is an explanatory diagram of a dry etching apparatus according to the present invention, and FIG. 2 is an enlarged view of the main part of FIG. 1.
図中の１は、反応ガスの導入口２及び排気口３を有【ノ
た真空容器である。この真空容器１内には、上部に半導
体ウェハ４を載置する第１電極５ａが設けられている。1 in the figure is a vacuum vessel having an inlet 2 and an exhaust port 3 for the reaction gas. A first electrode 5a on which a semiconductor wafer 4 is placed is provided in the vacuum container 1.
この第１′Ｉｌ極５ａには、マツチングボックス６を介
し前記第１電極５ａに高周波電力を印加する高周波電源
７が接続されている。A high-frequency power source 7 for applying high-frequency power to the first electrode 5a is connected to the 1'Il pole 5a via a matching box 6.
また、前記第１Ｎ極５ａには、該電極５ａに冷却水を送
給する循環器８が連結されでいる。前記真空容器１の上
部には、第２電極５ｂが設けられている。前記真空容器
１の側部には、予備室９が設けられている。ここで、真
空容器１内でエツチングを終了したウェハ４は、搬送機
構１０により前記予備室９を通って真空容器１の外に搬
送されるようになっている。前記搬送機構１０の近くに
は、第２図に示す温度機構１１が設けられている。Further, a circulator 8 that supplies cooling water to the first N-electrode 5a is connected to the first N-electrode 5a. A second electrode 5b is provided at the top of the vacuum container 1. A preliminary chamber 9 is provided on the side of the vacuum container 1 . Here, the wafer 4 that has been etched in the vacuum chamber 1 is transported to the outside of the vacuum chamber 1 through the preliminary chamber 9 by a transport mechanism 10. A temperature mechanism 11 shown in FIG. 2 is provided near the transport mechanism 10.
この温度機構１１は、主としてエツチングを終了したウ
ェハ４′をベース１２に固定するバキュームチャック１
３と、微弱なスプリング１４により自由に上下動可能な
絶縁物１５に固定されたシート状の温度センサー１６と
から構成される。ここで、前記温度センサー１６は、ウ
ェハ４′がバキュームヂ１アック１３と接触づる時の温
度変化の影響を受けないようバキュームチャック１３と
やや離れた位置にセットされている。また、不要な熱影
響を受けないよう外部とは前記絶縁物１５を介して熱的
に絶縁されている。前記湿度センサー１６は、ケーブル
１７を介して外部のモニター機器（図示せず）に接続さ
れている。このモニター機器は前記循環器８と電気的に
接続されており、前記温度センサー１６からの信号をモ
ニター機器に伝達し、ホストコンピュータによって処理
して前記循環器８の温度を自動的！：′、調節するよう
になっている。即ち、真空容器１内のウェハ４の温度を
試験によって何度がデータにとり、エツチング後のウェ
ハ４′の温度との相対的な関係を調べておく。そして、
エツチング終了後のウェハ４′の温度値により、第１１
極５ａに流す冷却水の温度を高くするかあるいは低くす
るかの信号を循環器８に送り、真空容器１内のウェハ４
の温度を調節する。なお、第２図において、１８は搬送
ベースである。This temperature mechanism 11 mainly consists of a vacuum chuck 1 that fixes the etched wafer 4' to the base 12.
3, and a sheet-shaped temperature sensor 16 fixed to an insulator 15 that can be freely moved up and down by a weak spring 14. Here, the temperature sensor 16 is set at a position slightly apart from the vacuum chuck 13 so as not to be affected by temperature changes when the wafer 4' comes into contact with the vacuum chuck 13. Further, it is thermally insulated from the outside via the insulator 15 so as not to receive unnecessary thermal influences. The humidity sensor 16 is connected to an external monitoring device (not shown) via a cable 17. This monitoring device is electrically connected to the circulatory system 8, and transmits the signal from the temperature sensor 16 to the monitoring device, which is processed by the host computer to automatically measure the temperature of the circulatory system 8. ：′、It is designed to be adjusted. That is, the temperature of the wafer 4 in the vacuum chamber 1 is measured several times through tests, and the relative relationship with the temperature of the wafer 4' after etching is investigated. and,
Based on the temperature value of the wafer 4' after etching, the 11th
A signal indicating whether to raise or lower the temperature of the cooling water flowing through the pole 5a is sent to the circulator 8, and the wafer 4 in the vacuum container 1 is
adjust the temperature. In addition, in FIG. 2, 18 is a conveyance base.
上記実施例によれば、バキュームチャック１３゜温度セ
ンサー１６等からなる温度機構１１を真空容！１１の外
側に配置し、これによりエツチングを終了したウェハ４
′の温度を測定し、この測定値に基づいて真空容器１内
の第１電極５ａの冷Ｗを行なう構造となっているため、
従来と比べ第１電極５ａ上のウェハ４の温度を正確に制
御することができる。従って、ウェハ４の品質を自動的
に制御できる。According to the above embodiment, the temperature mechanism 11 consisting of the vacuum chuck 13, the temperature sensor 16, etc. is connected to the vacuum chamber! The wafer 4 is placed outside the wafer 11 and has been etched.
′ is measured, and the first electrode 5a inside the vacuum vessel 1 is cooled based on the measured value.
Compared to the conventional method, the temperature of the wafer 4 on the first electrode 5a can be controlled more accurately. Therefore, the quality of the wafer 4 can be automatically controlled.
なお、上記実施例では、温度機構においてバキュームチ
ャックを用いた場合についって述べたが、これに限らず
、電磁石を用いたマグネット〈但し磁性体の吸着に限る
）や、被処理物に絶縁物を介して生じる高電圧を印加す
る時化じる吸引力を用いた静電チャックなどの方法を用
いてもよい。また、上下左右の区別はなく、センサリン
グ部分全体が可動、固定であっても同様な効果が得られ
る。In addition, in the above embodiment, the case where a vacuum chuck is used in the temperature mechanism is described, but the case is not limited to this. Methods such as electrostatic chucks, which use an attractive force that changes when applying a high voltage generated through the capacitor, may also be used. Moreover, there is no distinction between the upper, lower, left, and right, and the same effect can be obtained even if the entire sensor ring part is movable or fixed.
更に、温度センサーは１カ所に限らず、多数取付けとす
れば、被処理物の温度分布をモニターすることができる
。Furthermore, the temperature distribution of the object to be treated can be monitored by installing multiple temperature sensors instead of just one.
また、上記実施例は、ドライエツチング装置に適用した
場合について述べたが、こに限らず、スパッタリング装
置、ＣＶＤ装置、プラズマもしくは真空を用いた加熱装
置などにも応用できる。Furthermore, although the above embodiments have been described with reference to the case where the present invention is applied to a dry etching apparatus, the present invention is not limited thereto, but can also be applied to a sputtering apparatus, a CVD apparatus, a heating apparatus using plasma or vacuum, and the like.
［発明の効果］
以上詳述した如く本発明によれば、真空容器内の被処理
物の温度を制御してウェハの品質を十分管理できるエツ
チング装置を提供できる。[Effects of the Invention] As described in detail above, according to the present invention, it is possible to provide an etching apparatus that can control the temperature of the object to be processed in the vacuum chamber and sufficiently control the quality of the wafer.
第１図は本発明の一実施例に係るドライエツチング装置
の説明図、第２図は同装置の温度機構の拡大図である。
１・・・真空容器、２・・・導入口、３・・・排気口、
４・・・半導体ウェハ、５ａ、５ｂ・・・電極、６・・
・マツチングボックス、７・・・高周波電源、８・・・
循環器、９・・・予備空、１０・・・搬送機構、１１・
・・温度機構、１２・・・ベース、１３・・・バキュー
ムチャック、１４・・・スプリング、１６・・・温度セ
ンサー、１７・・・ケーブル、１８・・・搬送ベース。
出願人代理人 弁理士 鈴江武彦
第１図
第２図FIG. 1 is an explanatory view of a dry etching apparatus according to an embodiment of the present invention, and FIG. 2 is an enlarged view of the temperature mechanism of the apparatus. 1... Vacuum container, 2... Inlet, 3... Exhaust port,
4... Semiconductor wafer, 5a, 5b... Electrode, 6...
・Matching box, 7...High frequency power supply, 8...
Circulator, 9... Reserve empty, 10... Transport mechanism, 11.
...Temperature mechanism, 12...Base, 13...Vacuum chuck, 14...Spring, 16...Temperature sensor, 17...Cable, 18...Transfer base. Applicant's agent Patent attorney Takehiko Suzue Figure 1 Figure 2
Claims (3)
容器と、この真空容器内に設けられ上部に被処理物が載
置される第１電極と、この第１電極に対向して配置され
た第２電極と、前記第１電極に高周波電力を印加する電
源と、前記被処理物を前記真空容器の外まで搬送する搬
送機構と、エッチング終了後一定時間経過した前記被処
理物の温度を測定する測定機構とを具備することを特徴
とするエッチング装置。(1) A vacuum container having an inlet and an outlet for reactant gas, a first electrode provided in the vacuum container and on which the object to be processed is placed, and placed opposite to the first electrode. a second electrode that has been etched, a power supply that applies high-frequency power to the first electrode, a transport mechanism that transports the object to be processed to the outside of the vacuum container, and a temperature of the object that has elapsed for a certain period of time after the end of etching. An etching apparatus comprising: a measuring mechanism for measuring .
接触型温度測定器、あるいは光を利用した非接触型温度
測定器を用いることを特徴とする特許請求の範囲第１項
記載のエッチング装置。(2) The etching according to claim 1, characterized in that a contact temperature measuring device using a thermocouple or a non-contact temperature measuring device using light is used as the measurement mechanism for measuring temperature. Device.
れ、前記測定機構による温度データに基づいて冷却器内
の冷却水の温度を調節することを特徴とする特許請求の
範囲第１項記載のエッチング装置。(3) A cooler for cooling the first electrode is connected to the first electrode, and the temperature of the cooling water in the cooler is adjusted based on temperature data from the measuring mechanism. Etching apparatus described in Section 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22729786A JPS6381927A (en) | 1986-09-26 | 1986-09-26 | Etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22729786A JPS6381927A (en) | 1986-09-26 | 1986-09-26 | Etching device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6381927A true JPS6381927A (en) | 1988-04-12 |
| JPH0529132B2 JPH0529132B2 (en) | 1993-04-28 |
Family
ID=16858606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22729786A Granted JPS6381927A (en) | 1986-09-26 | 1986-09-26 | Etching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6381927A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5582782A (en) * | 1978-12-18 | 1980-06-21 | Fujitsu Ltd | Dry etching method |
| JPS60121281A (en) * | 1983-12-02 | 1985-06-28 | Canon Inc | Etching device by electric discharge |
| JPS6163030A (en) * | 1984-08-20 | 1986-04-01 | Kokusai Electric Co Ltd | Plasma etching device |
-
1986
- 1986-09-26 JP JP22729786A patent/JPS6381927A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5582782A (en) * | 1978-12-18 | 1980-06-21 | Fujitsu Ltd | Dry etching method |
| JPS60121281A (en) * | 1983-12-02 | 1985-06-28 | Canon Inc | Etching device by electric discharge |
| JPS6163030A (en) * | 1984-08-20 | 1986-04-01 | Kokusai Electric Co Ltd | Plasma etching device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0529132B2 (en) | 1993-04-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |