JPH0737704A - Temperature sensor - Google Patents

Temperature sensor

Info

Publication number
JPH0737704A
JPH0737704A JP17646893A JP17646893A JPH0737704A JP H0737704 A JPH0737704 A JP H0737704A JP 17646893 A JP17646893 A JP 17646893A JP 17646893 A JP17646893 A JP 17646893A JP H0737704 A JPH0737704 A JP H0737704A
Authority
JP
Japan
Prior art keywords
thermistor element
temperature sensor
oxide
heat resistant
change
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17646893A
Other languages
Japanese (ja)
Other versions
JP2985589B2 (en
Inventor
Hironori Moriwake
博紀 森分
雅幸 ▲高▼橋
Masayuki Takahashi
Yoko Sakota
洋子 迫田
Takuoki Hata
拓興 畑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5176468A priority Critical patent/JP2985589B2/en
Publication of JPH0737704A publication Critical patent/JPH0737704A/en
Application granted granted Critical
Publication of JP2985589B2 publication Critical patent/JP2985589B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To make small a rate of change with time of a resistance value by forming a thermistor element with an oxide of a particular spinel type structure. CONSTITUTION:A temperature sensor comprises a metallic heat resistant cap, thermistor element housed in this heat resistant cap and a lead wire which is electrically connected to the thermistor element and is also extended to the outside of the heat resistant cap. This thermistor element uses an oxide of the spinnel type structure expressed by Mgx (Al1-y-zCryMnz)2O4'0.95<=x <=1.05, 0.1<=y<=0.9, 0.1<= z<=0.9 (where, y+z<=1.0) or Mgx (Al1-y zCryMnz)2O4+a atomic CaO+b atomic rare earth metal oxide, 0.95<=x<=1.05, 0.1<=y<=0.9, 0.1<=z<=0.9, 0.1<=a<=5, 0.1<=b<=10 [ where y+z<=1.0, a and b are given the values when Mgx (Al 1-y-zCryMnz)2 is set to 100 atomic % ]. Thereby, the rate of change with time of a resistance value can be made small and heat resistant characteristics can also be improved.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、例えば自動車の排気ガ
ス対策用触媒の温度を検知するのに用いる温度センサに
関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temperature sensor used for detecting the temperature of an exhaust gas countermeasure catalyst for an automobile, for example.

【0002】[0002]

【従来の技術】近年、環境問題や燃費向上等の要求によ
り、排気ガス対策用触媒が用いられているが、その触媒
性能を高めるには、触媒の温度を正確に測定する必要が
ある。そのためには、温度センサの抵抗値の経時変化率
を小さく、具体的には±20%以内に抑えなくてはなら
ない。
2. Description of the Related Art In recent years, exhaust gas countermeasure catalysts have been used due to environmental problems and demands for improvement of fuel consumption. To improve the catalyst performance, it is necessary to measure the temperature of the catalyst accurately. For that purpose, the rate of change of the resistance value of the temperature sensor with time must be small, and specifically, must be suppressed within ± 20%.

【0003】従来、300〜700℃の温度を検知し、
1000℃の耐熱性を有する温度センサに用いるサーミ
スタ素子は、Mg(Al,Cr)24系の酸化物を用い
て形成されていた。
Conventionally, a temperature of 300 to 700 ° C. is detected,
The thermistor element used for the temperature sensor having a heat resistance of 1000 ° C. is formed by using an Mg (Al, Cr) 2 O 4 based oxide.

【0004】図2はサーミスタ素子の斜視図である。す
なわちこれはサーミスタ素子1に白金パイプ2a,2b
を挿入後、焼成したものである。このサーミスタ素子1
を図1に示すごとく耐熱キャップ4内に密封し、触媒温
度検知用の温度センサを形成していた。なお前記白金パ
イプ2a,2bには二芯管3a,3bを溶接し、その中
にリード線を通すことにより、サーミスタ素子1から耐
熱キャップ4外にリード線を引出していた。
FIG. 2 is a perspective view of the thermistor element. That is, this is the thermistor element 1 with platinum pipes 2a, 2b.
After being inserted, it is baked. This thermistor element 1
As shown in FIG. 1, the heat-resistant cap 4 was sealed to form a temperature sensor for detecting the catalyst temperature. The platinum pipes 2a and 2b were welded to the two-core tubes 3a and 3b, and the lead wires were passed through the two pipes, so that the lead wires were drawn out of the heat resistant cap 4 from the thermistor element 1.

【0005】[0005]

【発明が解決しようとする課題】上記従来の構成で高温
になると、耐熱キャップ4を構成する金属原子が、耐熱
キャップ4内の酸素と結合し、この結果として耐熱キャ
ップ4内の酸素分圧が下がる。するとサーミスタ素子1
から酸素が放出され、平衡を保とうとする作用がおき
る。また、耐熱キャップ4から水素や一酸化炭素等の還
元性のガスが発生するとそれがサーミスタ素子1に吸着
され、酸素を奪い、中へ拡散することとなっていた。こ
のようにサーミスタ素子1の酸素が失われると構造が変
化してしまい、抵抗値の経時変化率を±20%以内に抑
えることができないという問題点を有していた。
When the temperature is increased in the above conventional structure, the metal atoms forming the heat resistant cap 4 are bonded with oxygen in the heat resistant cap 4, and as a result, the oxygen partial pressure in the heat resistant cap 4 is reduced. Go down. Then the thermistor element 1
Oxygen is released from the cells, which acts to maintain equilibrium. Further, when a reducing gas such as hydrogen or carbon monoxide is generated from the heat resistant cap 4, it is adsorbed by the thermistor element 1, deprives oxygen and diffuses therein. As described above, when oxygen of the thermistor element 1 is lost, the structure changes, and there is a problem that the rate of change in resistance with time cannot be suppressed within ± 20%.

【0006】本発明は、上記従来の問題点を解決するも
ので、抵抗値の経時変化率を小さくすることができる温
度センサを提供することを目的とするものである。
The present invention solves the above-mentioned conventional problems, and an object of the present invention is to provide a temperature sensor capable of reducing the rate of change in resistance with time.

【0007】[0007]

【課題を解決するための手段】この目的を達成するため
に、本発明の温度センサはサーミスタ素子を(化5)で
表されるスピネル型構造の酸化物を用いて形成したもの
である。
In order to achieve this object, the temperature sensor of the present invention comprises a thermistor element formed by using an oxide having a spinel structure represented by the chemical formula (5).

【0008】[0008]

【化5】 [Chemical 5]

【0009】[0009]

【作用】この構成によると、Mg(Al,Cr)24
ピネル型固溶体の(Al,Cr)の一部がMnで置換さ
れる結果としてMnによる電気伝導が導入され、抵抗値
変化を抑えることができると思われる。
According to this structure, a part of (Al, Cr) of the Mg (Al, Cr) 2 O 4 spinel type solid solution is replaced by Mn, and as a result, electric conduction by Mn is introduced and the change in resistance value is suppressed. It seems that you can do it.

【0010】また、(Al,Cr)の一部をMnに置換
することにより、サーミスタ素子が緻密になり、還元性
の吸着ガスが内部の酸素を奪いにくくすることができ
る。
Further, by substituting a part of (Al, Cr) for Mn, the thermistor element becomes dense and it is possible to make it difficult for the reducing adsorbed gas to take away internal oxygen.

【0011】そしてこれらの結果として、抵抗値の経時
変化率の小さい温度センサを提供することができるもの
となる。
As a result of these, it becomes possible to provide a temperature sensor having a small rate of change in resistance with time.

【0012】[0012]

【実施例】(実施例1)以下本発明の一実施例について
図と表を参照しながら説明する。図1は触媒温度検知用
の温度センサの断面図である。従来と同じであるので同
一番号が付してある。
(Embodiment 1) An embodiment of the present invention will be described below with reference to the drawings and tables. FIG. 1 is a sectional view of a temperature sensor for detecting a catalyst temperature. Since it is the same as the conventional one, the same number is attached.

【0013】図2はサーミスタ素子1の斜視図である。
以下本発明の第1の実施例について説明する。
FIG. 2 is a perspective view of the thermistor element 1.
The first embodiment of the present invention will be described below.

【0014】(化5)におけるMgO,Al23,Cr
23,Mn34をx,y,zが(表1)に示す組成にな
るように所定量秤量し、試料1〜14を作成した。
MgO, Al 2 O 3 and Cr in the chemical formula 5
Predetermined amounts of 2 O 3 and Mn 3 O 4 were weighed so that x, y, and z had the composition shown in (Table 1), and samples 1 to 14 were prepared.

【0015】[0015]

【表1】 [Table 1]

【0016】まず試料1をボールミルで16時間混合
し、1200℃で仮焼後再びボールミルで18時間粉砕
した。そして乾燥後10重量%濃度のポリビニルアルコ
ール水溶液を全体の8重量%添加して造粒を行った。最
後に図2に示す形状に成形して、白金パイプ2a,2b
を挿入後1600℃で焼成した。試料No.2〜14に
ついても同様の製造を行った。
First, Sample 1 was mixed in a ball mill for 16 hours, calcined at 1200 ° C., and then ground again in a ball mill for 18 hours. Then, after drying, 8% by weight of the whole polyvinyl alcohol aqueous solution having a concentration of 10% by weight was added for granulation. Finally, the platinum pipes 2a and 2b are formed into the shape shown in FIG.
After inserting, it was baked at 1600 ° C. Sample No. Similar manufacturing was performed for 2 to 14.

【0017】このようにして得られたサーミスタ素子1
を従来と同様にして図1に示す触媒温度検知用温度セン
サに組み込んだ。なお耐熱キャップ4、二芯管3a,3
bは耐熱材料であるSUS310Sで形成されている。
そして300℃,600℃,900℃における抵抗値を
測定し、(表1)においてR300,R600,R90
0で示した。また900℃で1000時間の密閉耐久試
験を行った後、300℃における抵抗値を測定し、その
変化率を求めて(表1)にΔR300として示した。
The thermistor element 1 thus obtained
Was incorporated into the temperature sensor for detecting catalyst temperature shown in FIG. The heat-resistant cap 4 and the two-core tubes 3a, 3
b is formed of SUS310S which is a heat resistant material.
Then, the resistance values at 300 ° C, 600 ° C, and 900 ° C were measured, and in Table 1, R300, R600, and R90 were measured.
It is indicated by 0. Further, after conducting a sealed durability test at 900 ° C. for 1000 hours, the resistance value at 300 ° C. was measured, and the rate of change thereof was calculated and shown as ΔR300 in (Table 1).

【0018】抵抗値変化率は(数1)を用いて算出し
た。
The rate of change in resistance was calculated using (Equation 1).

【0019】[0019]

【数1】 [Equation 1]

【0020】表1の試料No.11〜14のように本発
明の請求の範囲外のものは、抵抗値変化率が78〜22
3%となり目安となる±20%を大きく越えてしまう。
また試料No.10,14のようにMn未置換のサーミ
スタ素子1はポーラスになり、粒界に還元性の吸着ガス
が入りやすくなり抵抗値変化率が目安となる±20%を
越えてしまう。
Sample No. 1 in Table 1 Nos. 11 to 14, which are outside the scope of the claims of the present invention, the resistance value change rate is 78 to 22.
It becomes 3%, which greatly exceeds the standard ± 20%.
In addition, sample No. As in Nos. 10 and 14, the thermistor element 1 not substituted with Mn becomes porous, and the reducing adsorbed gas easily enters the grain boundaries, and the rate of change in resistance value exceeds ± 20%, which is a standard.

【0021】(実施例2)以下、本発明の第2の実施例
について説明する。
(Second Embodiment) A second embodiment of the present invention will be described below.

【0022】(化6)におけるMgO,Al23,Cr
23,Mn34とCaCO3、希土類酸化物(Y23
La23,CeO2,Pr611,Nd23,Sm23
Eu 23,Gd23,Tb47,Dy23,Ho23
Er23,Tm23,Yb23,Lu23)をx,y,
z,a,bが(表2),(表3)に示す組成になるよう
に、それぞれ所定量秤量し、試料No.15〜54を作
成した。
MgO, Al in the chemical formula 62O3, Cr
2O3, Mn3OFourAnd CaCO3, Rare earth oxides (Y2O3
La2O3, CeO2, Pr6O11, Nd2O3, Sm2O3
Eu 2O3, Gd2O3, TbFourO7, Dy2O3, Ho2O3
Er2O3, Tm2O3, Yb2O3, Lu2O3) Is x, y,
z, a, and b should have the compositions shown in (Table 2) and (Table 3).
To the sample No. Make 15-54
I made it.

【0023】[0023]

【化6】 [Chemical 6]

【0024】[0024]

【表2】 [Table 2]

【0025】[0025]

【表3】 [Table 3]

【0026】そして(実施例1)と同様にして、サーミ
スタ素子1を得た。それを図1に示す触媒温度検知用の
温度センサの耐熱キャップ4内に密封し、300℃,6
00℃,900℃における抵抗値を測定し、それを(表
2),(表3)にR300,R600,R900で示し
た。次に1000℃で500の時間の密閉耐久試験を行
った後、300℃における抵抗値を測定し、変化率を
(数1)により求め(表2),(表3)にΔR300で
示した。
Then, the thermistor element 1 was obtained in the same manner as in (Example 1). It is sealed in a heat-resistant cap 4 of a temperature sensor for detecting the catalyst temperature shown in FIG.
The resistance values at 00 ° C. and 900 ° C. were measured and shown in (Table 2) and (Table 3) as R300, R600, and R900. Next, after carrying out a sealed endurance test at 1000 ° C. for 500 hours, the resistance value at 300 ° C. was measured, and the rate of change was determined by (Equation 1) (Table 2) and shown in Table 3 as ΔR300.

【0027】本実施例においては、希土類酸化物とCa
Oを添加して、緻密化をはかり、還元性吸着ガスがサー
ミスタ素子1の酸素を奪い、中へ拡散するのを防いでい
る。その上耐熱性も向上している。なおCaOは主成分
(化5)と固溶せず単独で粒界に析出する。また希土類
酸化物はペロブスカイト構造をとる(RE)CrO3
して粒界に析出している。REは希土類元素を表してい
る。
In this embodiment, rare earth oxide and Ca are used.
O is added to achieve densification and prevent the reducing adsorption gas from depriving the thermistor element 1 of oxygen and diffusing into it. In addition, heat resistance is also improved. Note that CaO does not form a solid solution with the main component (Chemical Formula 5) and precipitates alone at the grain boundaries. Further, the rare earth oxide is precipitated at the grain boundary as (RE) CrO 3 having a perovskite structure. RE represents a rare earth element.

【0028】(表2),(表3)を見ると試料No.1
7,32,52のようにCaOの添加量が5原子%を越
えると、焼成中にCaOが飛散して高温サーミスタ素子
1はポーラスになる。そのため酸素を奪われやすくな
り、抵抗値の経時変化率が±20%を越えてしまう。ま
た試料No.25のように希土類酸化物の添加量が10
原子%を越えると(RE)CrO3の偏析の量が増加す
る。そのため主成分(化5)からCrが多量に失われ、
半導体特性のバランスが崩れ抵抗値の経時変化率が±2
0%を越えてしまう。そして試料No.36のように添
加量が0.1原子%未満になると緻密化がはかれない。
CaOの場合も同様である。その結果、抵抗値の経時変
化率を±20%以内に抑えることができない。
Looking at (Table 2) and (Table 3), the sample No. 1
When the added amount of CaO exceeds 5 atomic% like 7, 32 and 52, CaO scatters during firing and the high temperature thermistor element 1 becomes porous. Therefore, oxygen is easily deprived, and the rate of change in resistance with time exceeds ± 20%. In addition, sample No. 25, the addition amount of rare earth oxide is 10
When it exceeds atomic%, the amount of segregation of (RE) CrO 3 increases. Therefore, a large amount of Cr is lost from the main component (Chemical formula 5),
The semiconductor characteristics are out of balance and the rate of change in resistance over time is ± 2.
It exceeds 0%. Sample No. If the addition amount is less than 0.1 atom% like 36, densification cannot be achieved.
The same applies to the case of CaO. As a result, the rate of change in resistance over time cannot be suppressed to within ± 20%.

【0029】(実施例3)以下、本発明の第3の実施例
について説明する。
(Embodiment 3) A third embodiment of the present invention will be described below.

【0030】(化7)におけるMgO,Al23,Cr
23,Mn34,CaCO3,ThO2をx,y,z,
a,bが(表4)に示す組成になるようにそれぞれ所定
量秤量し、試料No.55〜64を作成した。
MgO, Al 2 O 3 and Cr in the chemical formula 7
2 O 3 , Mn 3 O 4 , CaCO 3 , and ThO 2 are added to x, y, z,
A predetermined amount was weighed so that each of a and b had the composition shown in (Table 4). 55-64 were created.

【0031】[0031]

【化7】 [Chemical 7]

【0032】[0032]

【表4】 [Table 4]

【0033】そして実施例1の場合と同様にして、サー
ミスタ素子1を得て、それを図1に示す触媒温度検知用
の温度センサの耐熱キャップ4内に組み込み、300
℃,600℃,900℃における抵抗値を測定し、(表
4)にR300,R600,R900として示した。次
に1000℃で500時間の密封耐久試験を行った後、
300℃における抵抗値を測定し、その変化率を(数
1)により求め、(表4)にΔR300として示した。
(表4)を見るとわかるように実施例2と同様の効果が
ある。
Then, in the same manner as in Example 1, a thermistor element 1 was obtained, and the thermistor element 1 was incorporated into the heat resistant cap 4 of the temperature sensor for detecting the catalyst temperature shown in FIG.
The resistance values at temperatures of 600 ° C., 900 ° C., and 900 ° C. were measured and shown in Table 4 as R300, R600, and R900. Next, after conducting a sealing durability test at 1000 ° C. for 500 hours,
The resistance value at 300 ° C. was measured, and the rate of change was determined by (Equation 1), and shown in Table 4 as ΔR300.
As can be seen from Table 4, the same effect as that of the second embodiment is obtained.

【0034】なおCaO,ThO2は主成分(化1)と
固溶せず、単独で粒界に析出する。またThO2は還元
雰囲気に安定であるため、希土類酸化物と比較すると、
10分の1の添加量でも同様の効果が得られる。
Note that CaO and ThO 2 do not form a solid solution with the main component (Chemical Formula 1), but precipitate alone at the grain boundaries. Also, since ThO 2 is stable in a reducing atmosphere, when compared with rare earth oxides,
The same effect can be obtained with an addition amount of 1/10.

【0035】しかし、試料No.61のようにThO2
が全く添加されないと効果が見られず、試料64のよう
に10原子%を越えると急速に焼結性が悪くなり、抵抗
値の経時変化率は±20%以内に抑えられない。
However, the sample No. ThO 2 like 61
The effect is not observed unless the element is added at all, and the sinterability deteriorates rapidly when the content exceeds 10 atomic% as in the case of Sample 64, and the rate of change in resistance with time cannot be suppressed within ± 20%.

【0036】(実施例4)以下本発明の第4の実施例に
ついて説明する。
(Embodiment 4) A fourth embodiment of the present invention will be described below.

【0037】(化8)におけるZnO,MgO,Al2
3,Cr23,CaCO3,ZrO2をx,y,z,
a,bが(表5)に示す組成になるように、それぞれ所
定量秤量し、試料No.65〜77を作成した。
ZnO, MgO, Al 2 in (Chemical Formula 8)
O 3 , Cr 2 O 3 , CaCO 3 , and ZrO 2 are added to x, y, z,
Predetermined amounts were weighed so that a and b had the compositions shown in (Table 5), and sample No. 65-77 were created.

【0038】[0038]

【化8】 [Chemical 8]

【0039】[0039]

【表5】 [Table 5]

【0040】実施例1と同様にして、サーミスタ素子1
を得て、それを図1に示す触媒温度検知用温度センサの
耐熱キャップ4内に組み込み、300℃,600℃,9
00℃における抵抗値を測定し、それを(表5)にR3
00,R600,R900として示した。そして100
0℃で500時間の密閉耐久試験を行った後、300℃
における抵抗値を測定し、その変化率を(表5)に示し
た。この場合もZrO 2を添加することにより実施例
2,3と同様耐熱性が向上する。試料No.67のよう
にZrO2の添加量が30原子%を越えると、焼結性が
悪化し抵抗値の経時変化率を±20%以内に抑えられな
い。試料No.71のようにZrO2の添加量が0.1
原子%未満だと何の効果も見られない。
Similar to the first embodiment, the thermistor element 1
Of the temperature sensor for detecting the catalyst temperature shown in FIG.
Built in heat resistant cap 4, 300 ℃, 600 ℃, 9
The resistance value at 00 ° C was measured, and it was recorded in (Table 5) as R3.
00, R600 and R900 are shown. And 100
After carrying out a sealed durability test at 0 ° C for 500 hours, then at 300 ° C
The resistance value was measured and the rate of change is shown in (Table 5).
It was Also in this case ZrO 2Example by adding
Like 2 and 3, the heat resistance is improved. Sample No. Like 67
To ZrO2If the amount of addition of Al exceeds 30 atomic%, the sinterability will increase.
It deteriorates and the rate of change of resistance with time cannot be suppressed within ± 20%.
Yes. Sample No. ZrO like 712Addition amount of 0.1
If it is less than atomic%, no effect is seen.

【0041】また、主成分(化5)の組成が一定である
ならば、ZrO2の添加量を調節することにより、幅広
く抵抗値をコントロールできる。
If the composition of the main component (Chemical Formula 5) is constant, the resistance value can be widely controlled by adjusting the addition amount of ZrO 2 .

【0042】なお、上記実施例1〜4からもわかるよう
に本発明の温度センサに用いたサーミスタ材料は、環境
変化に強いものである。そこでディスク型やガラス封入
ディスク型やガラス封入する等形状を変えても温度セン
サとして十分使用できる。
As can be seen from Examples 1 to 4, the thermistor material used for the temperature sensor of the present invention is resistant to environmental changes. Therefore, even if the shape is changed, such as a disk type or glass-sealed disk type or glass-sealed, it can be sufficiently used as a temperature sensor.

【0043】[0043]

【発明の効果】以上のように、本発明の温度センサはサ
ーミスタ素子を(化5)で表されるスピネル型構造の酸
化物を用いて形成し、緻密化をはかると共にMnによる
電気伝導を導入している。その結果、酸素が失われたと
しても抵抗値の経時変化率を小さく抑えることができ
る。
As described above, in the temperature sensor of the present invention, the thermistor element is formed by using the oxide of the spinel type structure represented by (Chemical formula 5) to achieve densification and to introduce electric conduction by Mn. is doing. As a result, the rate of change in resistance with time can be suppressed to a small level even if oxygen is lost.

【0044】また、CaOと希土類酸化物、酸化トリウ
ム、酸化ジルコニウムを添加することによりさらに、緻
密化をはかることができる。そして、サーミスタ素子の
耐熱性も向上する。
Further, by adding CaO and a rare earth oxide, thorium oxide or zirconium oxide, it is possible to further densify. And the heat resistance of the thermistor element is also improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例の触媒温度検知用温度センサ
の断面図
FIG. 1 is a sectional view of a temperature sensor for detecting a catalyst temperature according to an embodiment of the present invention.

【図2】本発明の一実施例のサーミスタ素子の斜視図FIG. 2 is a perspective view of a thermistor element according to an embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 サーミスタ素子 2a,2b 白金パイプ 4 耐熱キャップ 1 Thermistor element 2a, 2b Platinum pipe 4 Heat resistant cap

───────────────────────────────────────────────────── フロントページの続き (72)発明者 畑 拓興 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Takuko Hata 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 金属製の耐熱キャップと、この耐熱キャ
ップ内に収納したサーミスタ素子と、このサーミスタ素
子に電気的に接続するとともに、前記耐熱キャップ外に
引出したリード線とを備え、前記サーミスタ素子を(化
1)で表されるスピネル型構造の酸化物を用いて形成し
た温度センサ。 【化1】
1. A thermistor element comprising: a metal heat-resistant cap; a thermistor element housed in the heat-resistant cap; and a lead wire which is electrically connected to the thermistor element and which is drawn out of the heat-resistant cap. Is a temperature sensor formed by using an oxide having a spinel structure represented by (Chemical Formula 1). [Chemical 1]
【請求項2】 (化1)の酸化物に代えて(化2)で表
される物質を用いてサーミスタを形成した請求項1記載
の温度センサ。 【化2】
2. The temperature sensor according to claim 1, wherein the thermistor is formed by using a substance represented by (formula 2) instead of the oxide represented by (formula 1). [Chemical 2]
【請求項3】 (化1)の酸化物に代えて(化3)で表
される物質を用いてサーミスタ素子を形成した請求項1
記載の温度センサ。 【化3】
3. The thermistor element is formed by using a substance represented by (Chemical Formula 3) instead of the oxide of (Chemical Formula 1).
The temperature sensor described. [Chemical 3]
【請求項4】 (化1)の酸化物に代えて(化4)で表
される物質を用いてサーミスタ素子を形成した請求項1
記載の温度センサ。 【化4】
4. The thermistor element is formed by using a substance represented by (Chemical Formula 4) instead of the oxide of (Chemical Formula 1).
The temperature sensor described. [Chemical 4]
JP5176468A 1993-07-16 1993-07-16 Temperature sensor Expired - Fee Related JP2985589B2 (en)

Priority Applications (1)

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JP5176468A JP2985589B2 (en) 1993-07-16 1993-07-16 Temperature sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5176468A JP2985589B2 (en) 1993-07-16 1993-07-16 Temperature sensor

Publications (2)

Publication Number Publication Date
JPH0737704A true JPH0737704A (en) 1995-02-07
JP2985589B2 JP2985589B2 (en) 1999-12-06

Family

ID=16014211

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP2985589B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7004415B2 (en) 1998-11-06 2006-02-28 Interface, Inc. Compact creel
JP2006332192A (en) * 2005-05-24 2006-12-07 Tateyama Kagaku Kogyo Kk Thick-film thermistor composition and its manufacturing method, and thick-film thermistor element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7004415B2 (en) 1998-11-06 2006-02-28 Interface, Inc. Compact creel
US7316366B2 (en) 1998-11-06 2008-01-08 Interface, Inc. Compact creel
JP2006332192A (en) * 2005-05-24 2006-12-07 Tateyama Kagaku Kogyo Kk Thick-film thermistor composition and its manufacturing method, and thick-film thermistor element

Also Published As

Publication number Publication date
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