JPH06325907A - Ceramic composition for thermistor - Google Patents

Ceramic composition for thermistor

Info

Publication number
JPH06325907A
JPH06325907A JP5132737A JP13273793A JPH06325907A JP H06325907 A JPH06325907 A JP H06325907A JP 5132737 A JP5132737 A JP 5132737A JP 13273793 A JP13273793 A JP 13273793A JP H06325907 A JPH06325907 A JP H06325907A
Authority
JP
Japan
Prior art keywords
thermistor
composition
elements
resistance value
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5132737A
Other languages
Japanese (ja)
Inventor
Masaki Iwatani
雅樹 岩谷
Kyohei Hayashi
恭平 林
Hiroshi Matsuzaki
浩 松崎
Yoshiro Suematsu
義朗 末松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Niterra Co Ltd
Original Assignee
NGK Spark Plug Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Spark Plug Co Ltd filed Critical NGK Spark Plug Co Ltd
Priority to JP5132737A priority Critical patent/JPH06325907A/en
Publication of JPH06325907A publication Critical patent/JPH06325907A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a thermistor element, which is stable to the partial pressure of oxygen and is good in the stability of a resistance value at a high temperature, by a method wherein a P-type semiconductor and an N-type semiconductor, whose dependences on the partial pressure of oxygen are opposite to each other, are mixed with each other. CONSTITUTION:M' shows one or two or more of elements selected from among elements belonging to group IIIa excepting La, and P<2> shows one or two or more of elements selected from among elements belonging to groups IVa, Va, VIa, VIIa and VIII, whose oxides show P-type characteristics. N<2> shows one or two or more of elements selected from among elements belonging to groups IVa, Va, VIa, VIIa and VIII, whose oxides show N-type characterstitics. A composition which is shown as M' (P<2>1-x.N<2>x)03, (x) is 0.1<=x<=0.9 is a ceramic composition for a thermistor. Thereby, it is possible to use the composition in a wide high temperature range, and a thermistor element which has a stable resistance value in either of an oxidizing atmosphere and a reducing atmosphere can be obtained.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の技術分野】本発明は特に高温における安定性
の高い負の温度係数を持つサーミスタ用材料に関するも
のである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a material for a thermistor having a negative temperature coefficient which is highly stable at high temperatures.

【0002】[0002]

【従来の技術】高温で使用できるサーミスタ用材料とし
て従来から、(a) Al2O3 、Cr2O3 を主成分とするコラン
ダム型結晶構造を主体とする材料(例えば特開昭50-118
294 号公報、「ファインセラミックハンドブック」浜野
健也著、朝倉書店1984年発行)、(b) MgAl2O4 、MgCr2O
4 、MgFe2O4 等よりなるスピネル型結晶構造化合物を主
体とした材料(例えば特開昭49-63995号公報)、(c) Y2
O3等で安定化させたZrO2を主体とする材料(例えば「内
燃機関」第30巻第8号第98頁)、(d) 高融点で導電性を
もつペロブスカイト型結晶構造化合物を主体とした材
料、例えばLa(Al1-XCrX )O3 系の組成をもつ材料(例え
ば特開昭51-108298 号公報)、絶縁基板上にLaCrO3を薄
膜化して用いる材料(例えば特開昭61-161701 号公
報)、LaCrO3とMgAl2O4 とを混合した材料(例えば特開
昭51-95297号公報、特開昭51-23691号公報)等が使用さ
れてきた。
2. Description of the Related Art As a material for a thermistor that can be used at high temperature, (a) a material mainly composed of a corundum type crystal structure containing Al 2 O 3 and Cr 2 O 3 as a main component (for example, Japanese Patent Laid-Open No. 50-118)
No. 294, "Fine Ceramic Handbook", Kenya Hamano, Asakura Shoten, 1984), (b) MgAl 2 O 4 , MgCr 2 O
4 , a material mainly composed of a spinel type crystal structure compound such as MgFe 2 O 4 (for example, JP-A-49-63995), (c) Y 2
Materials mainly composed of ZrO 2 stabilized with O 3 etc. (for example, “Internal Combustion Engine” Vol. 30, No. 8, page 98), (d) Mainly composed of perovskite type crystal structure compound having high melting point and conductivity Materials having a composition of La (Al 1-X Cr X ) O 3 system (for example, Japanese Patent Laid-Open No. 51-108298), materials used by laminating LaCrO 3 on an insulating substrate (for example, Japanese Laid-Open Patent Publication No. 61-161701), materials in which LaCrO 3 and MgAl 2 O 4 are mixed (for example, JP-A-51-95297 and JP-A-51-23691) and the like have been used.

【0003】[0003]

【発明が解決しようとする課題】ところが、(a) コラン
ダム型結晶構造を主体とする材料の焼結には1650℃以上
の高い温度が必要であることや、他元素を添加すること
により抵抗−温度特性に僅かなバリエーションをもたせ
ることはできるが、大幅に抵抗−温度特性を調整するこ
とができない。例えば、添加剤を多く加えると安定なコ
ランダム構造でなくなり、熱安定性が劣化する等の問題
があった。 (b) スピネル型結晶構造化合物を主体とした材料は1600
℃以上の温度で焼結する必要があるため、リード線の劣
化という問題があると共に、温度勾配定数βが大きいた
め広い温度域で使用できない等の問題があった。また、
NiAl2O4 を主体とした材料(特開昭49-29493号公報
等)、CoAl2O4 を主体とした材料(特開昭48-705号公報
等)があるが、いずれも耐熱性が低くて、高温で使用で
きないという問題があった。
However, (a) a high temperature of 1650 ° C. or higher is required for sintering a material mainly composed of a corundum type crystal structure, and resistance is increased by adding another element. Although the temperature characteristics can be slightly varied, the resistance-temperature characteristics cannot be adjusted significantly. For example, when a large amount of additive is added, the stable corundum structure is lost, and there is a problem that the thermal stability deteriorates. (b) The material mainly composed of spinel type crystal structure compound is 1600
Since it is necessary to sinter at a temperature of ℃ or more, there is a problem of deterioration of the lead wire, and there is a problem that it cannot be used in a wide temperature range due to a large temperature gradient constant β. Also,
There are materials mainly composed of NiAl 2 O 4 (JP-A-49-29493, etc.) and materials mainly composed of CoAl 2 O 4 (JP-A-48-705, etc.), both of which have heat resistance. There was a problem that it was too low to be used at high temperature.

【0004】(c) ジルコニア系を主体とする材料は酸素
イオン導電性であるため、雰囲気の状態とくに還元性雰
囲気では抵抗値が不安定であるとか、低い温度域では抵
抗値が大きくなり実用上使用できないという問題があっ
た。 (d) ペロブスカイト型結晶構造化合物を主体とした材料
は1600℃以上の温度で焼結する必要があるためリード線
の劣化という問題があるとか、僅かでもLaの酸化物が未
反応のまま残った場合には、その未反応物が大気中の水
分と反応して不安定なLa(OH)3 となり、素子が崩壊して
しまうとか、抵抗値が不安定である等の問題があった。
(C) Since the material mainly composed of zirconia is oxygen ion conductive, the resistance value is unstable in the atmosphere, especially in a reducing atmosphere, or the resistance value becomes large in a low temperature range, which is practically used. There was a problem that it could not be used. (d) The material mainly composed of perovskite type crystal structure compound needs to be sintered at a temperature of 1600 ° C. or higher, so that there is a problem of deterioration of the lead wire, or even a small amount of La oxide remains unreacted. In such a case, the unreacted material reacts with moisture in the atmosphere to become unstable La (OH) 3 , which causes problems such as element collapse and unstable resistance.

【0005】本発明の課題は、これらの問題を解消し、
材料の組成を調整することにより広い範囲の抵抗値を得
ることができ、1600℃以下の温度で焼結することができ
ることにより、リード線の劣化を防ぎ、吸湿性の物質を
含まず、雰囲気の湿度とか熱履歴による特性の劣化が少
なく、室温から1100℃までの広い温度域で使用可能なサ
ーミスタ用磁器組成物を提供することにある。
The object of the present invention is to solve these problems,
By adjusting the composition of the material, a wide range of resistance values can be obtained, and by being able to sinter at a temperature of 1600 ° C or less, deterioration of the lead wire is prevented, no hygroscopic substance is contained, and the atmosphere It is an object of the present invention to provide a porcelain composition for a thermistor which has little deterioration in characteristics due to humidity or heat history and can be used in a wide temperature range from room temperature to 1100 ° C.

【0006】[0006]

【課題を解決するための手段】本発明者らは鋭意研究の
結果、M1はLaを除く3a族に属する元素から選ばれた1
種または2種以上の元素を示し、P2は4a 、5a 、6a
、7a 及び8族に属する元素の酸化物がP型の特性を
示す元素から選ばれた1種または2種以上の元素とし、
N2は4a 、5a 、6a 、7a 及び8族に属する元素の酸
化物がN型の特性を示す元素から選ばれた1種または2
種以上の元素としたとき、M1(P2 1-X・N2 X )O3 と表わさ
れる組成物において、Xが、0.1 ≦X≦0.9 である磁器
組成物がサーミスタ用磁器組成物として好適であること
が分かった。
[Means for Solving the Problems] As a result of earnest research by the present inventors, M 1 is selected from elements belonging to the 3a group excluding La 1
Indicates species or two or more elements, P 2 is 4a, 5a, 6a
, Oxides of elements belonging to groups 7a and 8 are one or more elements selected from elements exhibiting P-type characteristics,
N 2 is one or two selected from the group of oxides of elements belonging to the 4a, 5a, 6a, 7a and 8 groups, which show N type characteristics.
In the composition represented by M 1 (P 2 1-X · N 2 X ) O 3 when the number of elements is 1 or more, a porcelain composition in which X is 0.1 ≦ X ≦ 0.9 is a porcelain composition for a thermistor. It turned out to be suitable.

【0007】特に、より好ましくはM1をY 、Sm、Pr、N
d、Dy、Ho、Er、Gd及びYbの内から選ばれた1種または
2種以上の元素とし、P2をCr、Mn、Co及びNiの内から選
ばれた1種または2種以上の元素とし、N2をTi、V 、Fe
及びAlの内から選ばれた1種または2種以上の元素とし
たとき、M1(P2 1-X・N2 X )O3 と表わされる組成物におい
て、Xが 0.1≦X≦0.9 であることを特徴とするサーミ
スタ用磁器組成物とするとよい。本発明によるサーミス
タ用磁器組成物からなるサーミスタ素子は高温における
抵抗値の安定性がよく、雰囲気の酸素分圧による影響を
受けることが少なくなり、金属チューブ内にサーミスタ
素子を組み込んで使用する自動車用センサとして金属チ
ューブの格別の熱処理等を行うことなく広く使用するこ
とができる。
Particularly preferably, M 1 is more preferably Y, Sm, Pr or N.
d, Dy, Ho, Er, Gd and Yb are one or more elements selected from Pb, and P 2 is one or more elements selected from Cr, Mn, Co and Ni. As an element, N 2 is Ti, V, Fe
And one or more elements selected from the group consisting of Al and Al, in the composition represented by M 1 (P 2 1−X · N 2 X ) O 3 , X is 0.1 ≦ X ≦ 0.9 A porcelain composition for a thermistor, which is characterized in that it is preferable. The thermistor element comprising the porcelain composition for thermistor according to the present invention has good stability of resistance value at high temperature, is less affected by the oxygen partial pressure of the atmosphere, and is used for automobiles by incorporating the thermistor element in a metal tube. It can be widely used as a sensor without special heat treatment of a metal tube.

【0008】また、このサーミスタ用磁器組成物に焼結
助剤を混合して焼結性を向上させることにより低温で焼
成することができ、強度が高く耐熱性に優れた特性が得
られる。ここで、焼結助剤としては、シリカ、ムライト
等粒界に液相を形成し、マトリックスをなして磁器の焼
結性を高めるものを指す。更に、Xを0.15以上かつ0.5
以下としたサーミスタ用磁器組成物からなるサーミスタ
素子は吸湿することがなく、耐久試験による変化が少な
く、耐熱性が優れ、容易に実用上の最適な抵抗値に調整
することができて有用である。
Further, by mixing a sintering aid with the porcelain composition for a thermistor to improve the sinterability, the composition can be fired at a low temperature, and it has high strength and excellent heat resistance. Here, the sintering aid refers to a material such as silica or mullite that forms a liquid phase at grain boundaries and forms a matrix to enhance the sinterability of porcelain. Furthermore, X is 0.15 or more and 0.5
The thermistor element composed of the following porcelain composition for thermistor does not absorb moisture, has little change due to a durability test, has excellent heat resistance, and is useful because it can be easily adjusted to an optimum resistance value for practical use. .

【0009】[0009]

【発明の作用】本発明による材料は、ペロブスカイト構
造であり、イオン半径が近い原子同志で互いに容易に置
換できるため、その置換された組成が安定に存在するた
め広い範囲で任意に組成を調整することができるもので
ある。また、Laを含んでいないため雰囲気の湿度等の影
響を受けることがなく、高温における安定性も優れてい
る。その理由は、本発明の化合物は高温においても安定
である、例えば、YCrO3 の融点は約2300℃と極めて高温
であることによるものと考えられる。
The material according to the present invention has a perovskite structure and can be easily replaced with each other by atoms having close ionic radii. Therefore, the replaced composition is stable and the composition can be arbitrarily adjusted within a wide range. Is something that can be done. In addition, since it does not contain La, it is not affected by the humidity of the atmosphere, etc., and has excellent stability at high temperatures. The reason is considered that the compound of the present invention is stable even at high temperature, for example, the melting point of YCrO 3 is extremely high at about 2300 ° C.

【0010】p型半導体とn型半導体の酸素分圧に対す
る依存性が逆であり、この両者を混合することにより、
お互いにその特性が相殺されて酸素分圧に対して安定な
特性をなすこととなる。また、熱に対して不安定な酸素
イオンまたは金属イオンの格子欠陥が少なくなって熱履
歴を受けても抵抗値の安定性が保たれる。
The dependence of the p-type semiconductor and the n-type semiconductor on the oxygen partial pressure is opposite, and by mixing these two,
The characteristics are canceled by each other and stable characteristics are obtained against the oxygen partial pressure. Further, the number of lattice defects of oxygen ions or metal ions unstable to heat is reduced, and the stability of the resistance value is maintained even if a thermal history is received.

【0010】また、本発明による材料は、広い範囲で連
続的に組成に調整することにより広い範囲で抵抗値を変
えることができるため、抵抗値や温度勾配定数(以下こ
れをβという)を自由に選ぶことができる利点もある。
本発明による材料は、1600℃以下の温度で焼結すること
ができて、リード線の劣化を防ぐことができ、しかも焼
結したサーミスタ素子は 300℃から1100℃以上の広い温
度範囲で使用することができるものである。
Further, the material according to the present invention can change the resistance value in a wide range by continuously adjusting the composition in a wide range, so that the resistance value and the temperature gradient constant (hereinafter referred to as β) can be freely set. There is also an advantage that you can choose.
The material according to the present invention can be sintered at a temperature of 1600 ° C or lower to prevent deterioration of the lead wire, and the sintered thermistor element can be used in a wide temperature range of 300 ° C to 1100 ° C or higher. Is something that can be done.

【0011】[0011]

【実施例1】本発明の第1の実施例を説明する。まず、
純度が99.9%以上で平均粒径が1μm のY2O3と、純度が
98.5%以上で平均粒径が1μm のCr2O3 と、純度が98.5
%以上で平均粒径が1μm のFe2O3 を表1に示す組成に
なるように秤量し、湿式により混合し、乾燥し、その
後、1400℃で2時間保持することにより仮焼する。仮焼
された粉末に平均粒径 0.6μm のSiO2粉末を1重量%加
えて湿式により混合する。混合したスラリーを 200メッ
シュの篩を通してから乾燥する。乾燥後PVB が15重量
%、DBP が10重量%、MEK が50重量%及びトルエンが25
重量%よりなるバインダーを添加して、プレス成形用粉
末を造粒する。
[Embodiment 1] A first embodiment of the present invention will be described. First,
Y 2 O 3 with a purity of 99.9% or more and an average particle size of 1 μm
Cr 2 O 3 with an average particle size of 1 μm and a purity of 98.5% or more
%, Fe 2 O 3 having an average particle size of 1 μm or more is weighed so as to have the composition shown in Table 1, mixed by a wet method, dried, and then calcined by holding at 1400 ° C. for 2 hours. 1% by weight of SiO 2 powder having an average particle size of 0.6 μm is added to the calcined powder and mixed by a wet method. Pass the mixed slurry through a 200 mesh screen and dry. After drying, PVB is 15% by weight, DBP is 10% by weight, MEK is 50% by weight and toluene is 25% by weight.
A binder consisting of wt% is added to granulate the powder for press molding.

【表1】 [Table 1]

【0012】この粉末をリード線となる直径が0.4mm で
ある白金線を1.2mm の間隙を空けて2本平行に配置した
金型に充填して1000Kg/cm2の圧力でプレスすることによ
り、直径が3mm、厚みが2mmで2本のリード線を有する
図1に示す形状に成形する。その成形品を1550℃の大気
中で焼成することによりサーミスタ素子を得る。このよ
うにして得たサーミスタ素子について、 300℃、 600℃
及び 900℃の大気中における抵抗値を測定した。次に、
耐久試験として、各試料を1000℃の大気中で 300時間保
持し、その保持前後の 300℃、 600℃及び 900℃におけ
る抵抗値を測定することにより耐久性能を調べた。その
結果を表1に示す。また、環境試験として各試料を 900
℃で酸素分圧が10-7気圧の試験室に保持し、そのときの
抵抗値を測定することにより雰囲気の酸素分圧に対する
安定性の評価を行った。その結果を表1に併せ示す。
[0012] This powder was filled with a platinum wire having a diameter of 0.4 mm as a lead wire, which was placed in parallel with a 1.2 mm gap, and was pressed at a pressure of 1000 kg / cm 2 . Molded into the shape shown in FIG. 1 having a diameter of 3 mm and a thickness of 2 mm and two lead wires. A thermistor element is obtained by firing the molded product in the air at 1550 ° C. About the thermistor element obtained in this way, 300 ℃, 600 ℃
And the resistance value in the atmosphere at 900 ° C was measured. next,
As a durability test, each sample was held in the atmosphere of 1000 ° C. for 300 hours, and the durability performance was examined by measuring the resistance values at 300 ° C., 600 ° C. and 900 ° C. before and after the holding. The results are shown in Table 1. As an environmental test, each sample is
The stability of the atmosphere with respect to the oxygen partial pressure was evaluated by keeping the oxygen partial pressure at 10 ° C in a test chamber at 10 -7 atm and measuring the resistance value at that time. The results are also shown in Table 1.

【0013】なお、β、抵抗変化率(以下ΔR率とい
う)およびΔR率の温度換算値は次式により定義された
ものである。 β=ln(R/R0)/(1/K−1/K0) ΔR率=(Rt −R0 )/R0 ×100 % ここで、lnは常用対数を示し、R及びR0 は各々大気中
で絶対温度K及びK0 における抵抗値を示す。300-650
及び650-900 とあるは各々 300℃と 650℃、及び650℃
と 900℃間におけるβを示す。また、Rt は耐久試験に
おいては耐久試験後の大気中の、環境試験においては酸
素分圧減圧室における各々絶対温度Kt (耐久試験にお
いてはt= 300℃又は、900℃、環境試験においてはt
= 900℃) における抵抗値を示す。ΔR率の温度換算値
はΔR率の欄で[ ]内に示し、次の式で定義される。 温度換算値=β×K0 /(ln(Rt /R0)×K0 +β)
−K0
The temperature conversion values of β, resistance change rate (hereinafter referred to as ΔR rate) and ΔR rate are defined by the following equations. β = ln (R / R 0 ) / (1 / K-1 / K 0 ) ΔR rate = (R t −R 0 ) / R 0 × 100% where ln represents the common logarithm, and R and R 0. Indicates resistance values at absolute temperatures K and K 0 in the atmosphere. 300-650
And 650-900 are 300 ℃, 650 ℃, and 650 ℃, respectively
And β between 900 and 900 ° C are shown. Further, R t is the absolute temperature K t in the atmosphere after the durability test in the durability test and in the oxygen partial pressure decompression chamber in the environment test respectively (t = 300 ° C. or 900 ° C. in the durability test, t
= 900 ° C). The temperature conversion value of the ΔR rate is shown in brackets in the ΔR rate column, and is defined by the following equation. Temperature conversion value = β × K 0 / (ln (R t / R 0 ) × K 0 + β)
-K 0

【0014】表1から明らかな通り、M1(P2 1-X・N2 X )O
3 と一般式で表される組成において、P2とN2の混合比を
連続的に変えてその固容体を得ることができ、それによ
り抵抗値の調整を容易に行うことができる。例えばYCrO
3 のCrサイトをFeで置換することにより他の特性を損な
うことなく抵抗値やβを増加させることができるからで
ある。従って実用上必要とする抵抗値やβのサーミスタ
素子を容易に供給することができる。
As is clear from Table 1, M 1 (P 2 1- X.N 2 X ) O
In the composition represented by 3 and the general formula, the solid solution can be obtained by continuously changing the mixing ratio of P 2 and N 2 , whereby the resistance value can be easily adjusted. For example YCrO
This is because by substituting the Cr site of 3 with Fe, the resistance value and β can be increased without impairing other properties. Therefore, it is possible to easily supply a thermistor element having a resistance value or β required for practical use.

【0015】これは、この反応系は単純な置換固溶であ
るため副生成物が無く、抵抗値の調整を容易に行うこと
ができるからであると考えられる。また耐久試験および
耐環境試験の結果からわかる通り、熱履歴とか雰囲気の
酸素分圧に対して非常に安定な特性を示していることが
わかる。これは、p型半導体材であるYCrO3 とn型半導
体材であるFe2O3 の混合により、熱履歴に対して不安定
な金属イオン欠陥や酸素イオン欠陥の量が減少するため
であると考えられる。また、p型半導体とn型半導体は
酸素分圧に対して逆の依存性を示すため両成分の混合に
より酸素分圧依存性が相殺されるものと考えられる。
It is considered that this reaction system is a simple substitution solid solution and therefore has no by-products, and the resistance value can be easily adjusted. Further, as can be seen from the results of the durability test and the environment resistance test, it can be seen that the properties are very stable against heat history and oxygen partial pressure in the atmosphere. This is because the mixing of the p-type semiconductor material YCrO 3 and the n-type semiconductor material Fe 2 O 3 reduces the amount of metal ion defects and oxygen ion defects unstable to thermal history. Conceivable. Further, since the p-type semiconductor and the n-type semiconductor show the opposite dependence on the oxygen partial pressure, it is considered that the mixing of both components cancels the oxygen partial pressure dependence.

【0016】特に、X=0.2 ないし0.3 で格子欠陥が最
も少なくなっており、その結果、耐久試験を行った前後
の抵抗変化が小さいとか、環境試験を行ったときの抵抗
変化が小さくなっており、検出精度の高いことを要する
向きとか、酸素分圧が変化する雰囲気で使用するにも最
適である。
Particularly, when X = 0.2 to 0.3, the number of lattice defects is the smallest, and as a result, the resistance change before and after the durability test is small, or the resistance change after the environmental test is small. Also, it is most suitable for use in a direction that requires high detection accuracy or in an atmosphere where the oxygen partial pressure changes.

【0017】[0017]

【発明の効果】本発明により、 300℃から1100℃の広い
温度範囲で使用可能で、酸化または還元のいずれの雰囲
気に対しても抵抗値の安定したサーミスタ素子を提供す
ることができたものである。また、リード線の劣化を防
止することができたため、高温における安定性が優れ、
広い温度範囲で使用可能で、機械的強度が強く、例えば
自動車の排気ガスの浄化用触媒の過熱検知装置とか、排
気ガス還流装置の還流ガス温の検知装置等高温のガス温
の測定装置又は振動の激しい場所での測定装置、その他
各種の炉の温度検出装置として使用できるサーミスタ用
磁器組成物を提供することができた。
According to the present invention, it is possible to provide a thermistor element which can be used in a wide temperature range of 300 ° C. to 1100 ° C. and has a stable resistance value in both oxidizing and reducing atmospheres. is there. In addition, because it was possible to prevent the deterioration of the lead wire, stability at high temperature is excellent,
It can be used in a wide temperature range and has high mechanical strength.For example, an overheat detection device for an automobile exhaust gas purification catalyst, a recirculation gas temperature detection device for an exhaust gas recirculation device, or a high temperature gas temperature measurement device or vibration. It was possible to provide a porcelain composition for a thermistor which can be used as a measuring device in a severe place and as a temperature detecting device for various furnaces.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例を示す図FIG. 1 is a diagram showing an embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 サーミスタ素子 2 リード線 1 Thermistor element 2 Lead wire

───────────────────────────────────────────────────── フロントページの続き (72)発明者 末松 義朗 愛知県名古屋市瑞穂区高辻町14番18号 日 本特殊陶業株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yoshiro Suematsu 14-18 Takatsuji-cho, Mizuho-ku, Nagoya, Aichi Nihon Special Ceramics Co., Ltd.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 M1はLaを除く3a族に属する元素から選
ばれた1種または2種以上の元素を示し、P2は4a 族、
5a 族、6a 族、7a 族及び8族に属する元素の酸化物
がp型の特性を示す元素から選ばれた1種または2種以
上の元素を示し、N2は4a 族、5a 族、6a 族、7a 族
及び8族に属する元素の酸化物がn型の特性を示す元素
から選ばれた1種または2種以上の元素を示すとしたと
き、 M1(P2 1-X・N2 X )O3 と表わされる組成物において、Xが
0.1 ≦X≦0.9 であることを特徴とするサーミスタ用磁
器組成物。
1. M 1 represents one or more elements selected from elements belonging to the 3a group except La, P 2 represents the 4a group,
The oxides of the elements belonging to the 5a group, 6a group, 7a group, and 8 group represent one or more elements selected from the elements exhibiting p-type characteristics, and N 2 represents 4a group, 5a group, and 6a. Assuming that the oxides of the elements belonging to Group 7, 7a, and 8 represent one or more elements selected from the elements exhibiting n-type characteristics, M 1 (P 2 1-X・ N 2 In a composition represented by X ) O 3 , X is
A ceramic composition for a thermistor, characterized in that 0.1 ≦ X ≦ 0.9.
【請求項2】 M1をY 、Sm、Pr、Nd、Dy、Ho、Er、Gd及
びYbの内から選ばれた1種または2種以上の元素を示
し、P2をCr、Mn、Co及びNiの内から選ばれた1種または
2種以上の元素を示し、N2をTi、V 、Fe及びAlの内から
選ばれた1種または2種以上の元素を示すとしたとき、
M1(P2 1-X・N2 X )O3 と表わされる組成物において、Xが
0.1 ≦X≦0.9 であることを特徴とするサーミスタ用磁
器組成物。
2. M 1 represents one or more elements selected from Y, Sm, Pr, Nd, Dy, Ho, Er, Gd and Yb, and P 2 represents Cr, Mn, Co. And one or more elements selected from Ni and N 2 is one or more elements selected from Ti, V, Fe and Al,
In the composition represented by M 1 (P 2 1- X.N 2 X ) O 3 , X is
A ceramic composition for a thermistor, characterized in that 0.1 ≦ X ≦ 0.9.
JP5132737A 1993-05-10 1993-05-10 Ceramic composition for thermistor Pending JPH06325907A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5132737A JPH06325907A (en) 1993-05-10 1993-05-10 Ceramic composition for thermistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5132737A JPH06325907A (en) 1993-05-10 1993-05-10 Ceramic composition for thermistor

Publications (1)

Publication Number Publication Date
JPH06325907A true JPH06325907A (en) 1994-11-25

Family

ID=15088423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5132737A Pending JPH06325907A (en) 1993-05-10 1993-05-10 Ceramic composition for thermistor

Country Status (1)

Country Link
JP (1) JPH06325907A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0866472A2 (en) 1997-03-19 1998-09-23 Denso Corporation Wide-range type thermistor element and method of producing the same
US6261480B1 (en) 1997-03-19 2001-07-17 Denso Corporation Wide-range type thermistor element and method of producing the same
US6306315B1 (en) 1998-02-27 2001-10-23 Denso Corporation Thermistor device thermistor device manufacturing method and temperature sensor
JP2003183075A (en) * 2001-10-11 2003-07-03 Ngk Spark Plug Co Ltd Electrically conductive oxide sintered compact
US6663794B2 (en) 2000-08-10 2003-12-16 Nippon Soken, Inc. Reducing-atmosphere-resistant thermistor element, production method thereof and temperature sensor
US6740261B1 (en) 1997-03-19 2004-05-25 Denso Corporation Wide-range type thermistor element and method of producing the same
US6878304B2 (en) 2000-08-10 2005-04-12 Nippon Soken Inc. Reduction resistant thermistor, method of production thereof, and temperature sensor
JP4754652B1 (en) * 2010-09-08 2011-08-24 立山科学工業株式会社 Control circuit for catalytic combustion gas sensor
KR101304939B1 (en) * 2012-02-09 2013-09-06 조선대학교산학협력단 Composite for temperature sensor, temperature sensor manufactured using the same and manufacturing method for the temperature sensor

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0866472A2 (en) 1997-03-19 1998-09-23 Denso Corporation Wide-range type thermistor element and method of producing the same
US6261480B1 (en) 1997-03-19 2001-07-17 Denso Corporation Wide-range type thermistor element and method of producing the same
US6740261B1 (en) 1997-03-19 2004-05-25 Denso Corporation Wide-range type thermistor element and method of producing the same
US6306315B1 (en) 1998-02-27 2001-10-23 Denso Corporation Thermistor device thermistor device manufacturing method and temperature sensor
US7056453B2 (en) 1998-02-27 2006-06-06 Denso Corporation Thermistor device, thermistor device manufacturing method and temperature sensor
US6663794B2 (en) 2000-08-10 2003-12-16 Nippon Soken, Inc. Reducing-atmosphere-resistant thermistor element, production method thereof and temperature sensor
US6878304B2 (en) 2000-08-10 2005-04-12 Nippon Soken Inc. Reduction resistant thermistor, method of production thereof, and temperature sensor
JP2003183075A (en) * 2001-10-11 2003-07-03 Ngk Spark Plug Co Ltd Electrically conductive oxide sintered compact
JP4527347B2 (en) * 2001-10-11 2010-08-18 日本特殊陶業株式会社 Sintered body for thermistor
JP4754652B1 (en) * 2010-09-08 2011-08-24 立山科学工業株式会社 Control circuit for catalytic combustion gas sensor
WO2012033054A1 (en) * 2010-09-08 2012-03-15 立山科学工業株式会社 Contact burning-type gas sensor, manufacturing method therefor, and control circuit therefor
KR101304939B1 (en) * 2012-02-09 2013-09-06 조선대학교산학협력단 Composite for temperature sensor, temperature sensor manufactured using the same and manufacturing method for the temperature sensor

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