JPH0737231Y2 - イオン注入装置 - Google Patents
イオン注入装置Info
- Publication number
- JPH0737231Y2 JPH0737231Y2 JP1989108799U JP10879989U JPH0737231Y2 JP H0737231 Y2 JPH0737231 Y2 JP H0737231Y2 JP 1989108799 U JP1989108799 U JP 1989108799U JP 10879989 U JP10879989 U JP 10879989U JP H0737231 Y2 JPH0737231 Y2 JP H0737231Y2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- ion
- ground potential
- insulator
- ion implantation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims description 66
- 238000005468 ion implantation Methods 0.000 claims description 11
- 238000010884 ion-beam technique Methods 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000012212 insulator Substances 0.000 description 10
- 238000000605 extraction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989108799U JPH0737231Y2 (ja) | 1989-09-18 | 1989-09-18 | イオン注入装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989108799U JPH0737231Y2 (ja) | 1989-09-18 | 1989-09-18 | イオン注入装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0348854U JPH0348854U (OSRAM) | 1991-05-10 |
| JPH0737231Y2 true JPH0737231Y2 (ja) | 1995-08-23 |
Family
ID=31657418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989108799U Expired - Fee Related JPH0737231Y2 (ja) | 1989-09-18 | 1989-09-18 | イオン注入装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0737231Y2 (OSRAM) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3430806B2 (ja) * | 1996-07-25 | 2003-07-28 | 日新電機株式会社 | イオン注入装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52119177A (en) * | 1976-03-31 | 1977-10-06 | Nec Corp | Target for charged particle |
| JPS5652860A (en) * | 1979-10-01 | 1981-05-12 | Mitsubishi Electric Corp | Ion injection device |
-
1989
- 1989-09-18 JP JP1989108799U patent/JPH0737231Y2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0348854U (OSRAM) | 1991-05-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |