JPH07321557A - High frequency signal level detection circuit and high frequency signal level detection method - Google Patents
High frequency signal level detection circuit and high frequency signal level detection methodInfo
- Publication number
- JPH07321557A JPH07321557A JP11619294A JP11619294A JPH07321557A JP H07321557 A JPH07321557 A JP H07321557A JP 11619294 A JP11619294 A JP 11619294A JP 11619294 A JP11619294 A JP 11619294A JP H07321557 A JPH07321557 A JP H07321557A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- frequency signal
- detection
- bias
- signal level
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、温度変化に対して安定
な高周波信号レベル検出回路および高周波信号レベル検
出方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency signal level detecting circuit and a high frequency signal level detecting method which are stable against temperature changes.
【０００２】[0002]
【従来の技術】従来の高周波信号レベル検出回路は、半
導体ダイオードの温度変化に伴う特性の変化のうち、立
ち上がり電圧の移動を図３のように、検波用のダイオー
ド４に電圧源５１の出力電圧を、コイル３を経由して供
給し、電圧源５１の出力電圧を検波用の半導体ダイオー
ド４の温度変化と同等に変化させることにより、温度の
変化にかかわらず、同じ交流入力に対して同一の検出出
力を得ようとするものであった。2. Description of the Related Art A conventional high-frequency signal level detection circuit detects a change in a rising voltage among changes in characteristics of a semiconductor diode due to a temperature change as shown in FIG. Are supplied via the coil 3 and the output voltage of the voltage source 51 is changed to be equal to the temperature change of the semiconductor diode 4 for detection, so that the same AC input can be obtained regardless of the temperature change. It was intended to obtain the detection output.
【０００３】[0003]
【発明が解決しようとする課題】この従来の高周波信号
レベル検出回路では、半導体ダイオードの立ち上がり特
性のみは補償できるが、温度による電圧−電流特性の傾
き（即ち、微分特性）の変化までは補償できないという
欠点があった。In this conventional high-frequency signal level detection circuit, only the rising characteristic of the semiconductor diode can be compensated, but the change in the slope of voltage-current characteristic (that is, differential characteristic) due to temperature cannot be compensated. There was a drawback.
【０００４】また、前者の補償にしても、半導体ダイオ
ードの温度特性のダイオード毎のバラツキのため、所要
の安定度を得るためには、何度も周囲温度を変えながら
バイアス電圧５１の出力電圧の温度変化を合わせ込む必
要があった。Even with the former compensation, since the temperature characteristics of the semiconductor diode vary from one diode to another, in order to obtain the required stability, the output voltage of the bias voltage 51 should be changed while changing the ambient temperature many times. It was necessary to adjust for temperature changes.
【０００５】本発明の目的は、検波用の半導体ダイオー
ドのバイアス電圧を周囲温度の変化にかかわらず、最適
なバイアス点に設定することができ、かつ温度による検
波効率の変化をも補正することができる高周波信号レベ
ル検出回路および高周波信号レベル検出方法を提供する
ことにある。It is an object of the present invention to set the bias voltage of a semiconductor diode for detection to an optimum bias point regardless of changes in ambient temperature, and to correct changes in detection efficiency due to temperature. It is an object of the present invention to provide a high frequency signal level detection circuit and a high frequency signal level detection method.
【０００６】[0006]
【課題を解決するための手段】本発明は、半導体ダイオ
ードで検波することによって高周波信号のレベルを検出
する高周波信号レベル検出回路において、前記半導体ダ
イオードに印加するバイアスを、高周波信号を最適な効
率で検波できる第１の電圧と、高周波信号の振幅より充
分大きい第２および第３の電圧の３段階に階段上に周期
的に変化させる手段と、前記第２、第３の電圧のバイア
スに対する半導体ダイオードの電流値から、前記半導体
ダイオードのその時点の温度での電圧−電流特性を計算
する手段と、計算された前記電圧−電流特性により前記
第１の電圧を最適電圧に移動させる手段とを備えること
を特徴としている。According to the present invention, in a high-frequency signal level detection circuit for detecting the level of a high-frequency signal by detecting with a semiconductor diode, the bias applied to the semiconductor diode is set to an optimum efficiency of the high-frequency signal. Means for periodically changing the first voltage that can be detected and the second and third voltages, which are sufficiently larger than the amplitude of the high frequency signal, in three steps, and a semiconductor diode for biasing the second and third voltages. Means for calculating the voltage-current characteristic of the semiconductor diode at the current temperature, and means for moving the first voltage to the optimum voltage according to the calculated voltage-current characteristic. Is characterized by.
【０００７】また、本発明は、計算された前記電圧−電
流特性から、補正された前記第１の電圧の値に対する検
波効率を計算し、検波出力を補正する手段を備えるのが
好適である。Further, the present invention preferably comprises means for calculating the detection efficiency for the corrected value of the first voltage from the calculated voltage-current characteristic and correcting the detection output.
【０００８】[0008]
【作用】本発明の高周波信号レベル検出回路は、検波用
半導体ダイオードのバイアス電圧を周期的に３段階に変
化させ、検波に適当な電圧より大きい２つの電圧に対す
るダイオード電流からその時点での静特性を計算推定
し、検波のための最適バイアスに第１の電圧を合わせる
と共に、検波効率の変化を計算して、検波出力を補正す
る。The high-frequency signal level detecting circuit of the present invention periodically changes the bias voltage of the semiconductor diode for detection in three steps, and the static characteristic at that time is calculated from the diode current for two voltages larger than the voltage suitable for detection. Is calculated and estimated, the first voltage is adjusted to the optimum bias for detection, the change in detection efficiency is calculated, and the detection output is corrected.
【０００９】[0009]
【実施例】次に、本発明の実施例について、図面を参照
して説明する。Embodiments of the present invention will now be described with reference to the drawings.
【００１０】図１は、本発明の高周波信号レベル検出回
路の一実施例を示す回路図である。本実施例において、
高周波信号源１の一方の端子は接地され、他方の端子は
コンデンサ２を介して半導体ダイオード４の一方の端子
に接続され、バイアス電圧源１１の端子２５は接地さ
れ、出力端子２４はコイル３を介して半導体ダイオード
４の一方の端子に接続されている。半導体ダイオード４
の他方の端子は、コンデンサ５と抵抗６とからなる並列
回路を介して接地されると共に、サンプルホールド回路
７に接続されている。サンプルホールド回路７の出力
は、Ａ／Ｄ変換器８を介して演算器９に入力され、演算
器９の出力は、出力端子１０に出力される。また、演算
器９の端子２２は、Ｄ／Ａ変換器１２を介してバイアス
電圧源１１の入力端子２３に接続されている。FIG. 1 is a circuit diagram showing an embodiment of a high frequency signal level detecting circuit of the present invention. In this example,
One terminal of the high-frequency signal source 1 is grounded, the other terminal is connected to one terminal of the semiconductor diode 4 via the capacitor 2, the terminal 25 of the bias voltage source 11 is grounded, and the output terminal 24 is the coil 3. It is connected to one terminal of the semiconductor diode 4 via. Semiconductor diode 4
The other terminal of is connected to the sample hold circuit 7 while being grounded via a parallel circuit including a capacitor 5 and a resistor 6. The output of the sample hold circuit 7 is input to the arithmetic unit 9 via the A / D converter 8, and the output of the arithmetic unit 9 is output to the output terminal 10. The terminal 22 of the computing unit 9 is connected to the input terminal 23 of the bias voltage source 11 via the D / A converter 12.
【００１１】次に、本実施例の動作について説明する。Next, the operation of this embodiment will be described.
【００１２】高周波信号源１の出力は、半導体ダイオー
ド４で検波され、コンデンサ５、抵抗６からなる時定数
回路の電圧を上昇させる。半導体ダイオード４のバイア
ス電圧は、バイアス電圧源１１の出力端子２４からコイ
ル３を経て供給される。バイアス電圧源１１の出力は、
図２に示すように検波に適合する第１の電圧と、測定範
囲内の高周波信号源１の振幅より充分大きな一定値の第
２、第３の電圧を発生する。The output of the high-frequency signal source 1 is detected by the semiconductor diode 4 and raises the voltage of the time constant circuit composed of the capacitor 5 and the resistor 6. The bias voltage of the semiconductor diode 4 is supplied from the output terminal 24 of the bias voltage source 11 via the coil 3. The output of the bias voltage source 11 is
As shown in FIG. 2, a first voltage suitable for detection and second and third voltages having constant values sufficiently larger than the amplitude of the high frequency signal source 1 within the measurement range are generated.
【００１３】サンプルホールド回路７は、図２のｔs1，
ｔs2，ｔs3の各々の電圧を周期的に抽出し、Ａ／Ｄ変換
器８でデジタル信号化し、演算器９でｔs1に対応する電
圧値をデジタル信号の形で出力すると同時に、ｔs2，ｔ
s3に対応する電圧値から、その時点の温度での半導体ダ
イオード４の電圧−電流特性を計算し、第１の電圧の値
を室温で定めた所定の、かつ、わずかな順バイアス電流
が半導体ダイオード４に流れる値となるよう、バイアス
電圧源１１の制御入力端子２３へ指令を入力する。ま
た、計算した半導体ダイオード４の電圧−電流特性から
第１の電圧に対する検波効率を計算し、出力端子１０へ
の出力を補正する。The sample-and-hold circuit 7 has t s1 ,
Each voltage of t s2 and t s3 is periodically extracted, converted into a digital signal by the A / D converter 8, and the voltage value corresponding to t s1 is output by the calculator 9 in the form of a digital signal, and at the same time, t s2 , T
From the voltage value corresponding to s3 , the voltage-current characteristic of the semiconductor diode 4 at the temperature at that time is calculated, and the predetermined and slight forward bias current that determines the value of the first voltage at room temperature is a semiconductor diode. A command is input to the control input terminal 23 of the bias voltage source 11 so that the value becomes a value flowing in 4. Further, the detection efficiency for the first voltage is calculated from the calculated voltage-current characteristics of the semiconductor diode 4, and the output to the output terminal 10 is corrected.
【００１４】一般に、ダイオードの電圧−電流特性は、
次式で得られる。Generally, the voltage-current characteristic of a diode is
It is obtained by the following formula.
【００１５】[0015]
【数１】 [Equation 1]
【００１６】ここでＩO ＝逆方向飽和電流、ｖD ＝半導
体ダイオードに加わる電圧、 ｑ＝電子の電荷、Ｔ＝絶対温度、ｍ＝１〜２の間の定数 従って、ここでｖD は第２，第３のバイアス電圧であ
り、定数ｍ、絶対温度Ｔ以外は既知であるから、第２、
第３のバイアス電圧に対するダイオード電流が分かれ
ば、定数ｍ、絶対温度Ｔを計算することができ、所定の
バイアス電流を流すために必要な第１のバイアス電圧
は、どのような絶対温度Ｔに対しても求めることができ
る。Where I O = reverse saturation current, v D = voltage applied to the semiconductor diode, q = electron charge, T = absolute temperature, m = 1 to a constant between 2 and therefore v D is the first The second and third bias voltages are known, except for the constant m and the absolute temperature T.
If the diode current for the third bias voltage is known, the constant m and the absolute temperature T can be calculated, and the first bias voltage required to flow the predetermined bias current is You can also ask.
【００１７】[0017]
【発明の効果】以上述べたように、本発明は、検波に適
当なバイアス電圧以外の２つのバイアス電圧を検波用の
半導体ダイオードに与えることにより半導体ダイオード
の電圧−電流特性を求めて、周囲温度の変化にかかわら
ずダイオードのバイアス値を所定のバイアス点に設定す
ることができ、かつ温度による検波効率の変化を補正す
ることができる。As described above, according to the present invention, two bias voltages other than the bias voltage suitable for detection are applied to the semiconductor diode for detection to obtain the voltage-current characteristic of the semiconductor diode, and the ambient temperature is determined. It is possible to set the bias value of the diode to a predetermined bias point regardless of the change of the above, and it is possible to correct the change of the detection efficiency due to the temperature.
【図１】本発明の高周波信号レベル検出回路の一実施例
を示す回路図である。FIG. 1 is a circuit diagram showing an embodiment of a high frequency signal level detection circuit of the present invention.
【図２】バイアス電圧源の出力波形を示す図である。FIG. 2 is a diagram showing an output waveform of a bias voltage source.
【図３】従来の高周波信号レベル検出回路の一実施例を
示す回路図である。FIG. 3 is a circuit diagram showing an embodiment of a conventional high frequency signal level detection circuit.
１ 高周波信号源 ２，５ コンデンサ ３ コイル ４ 半導体ダイオード ６ 抵抗 ７ サンプルホールド回路 ８ Ａ／Ｄ変換器 ９ 演算器 １０ 出力端子 １１ バイアス電圧源 １２ Ｄ／Ａ変換器 1 High-frequency signal source 2, 5 Capacitor 3 Coil 4 Semiconductor diode 6 Resistance 7 Sample and hold circuit 8 A / D converter 9 Arithmetic unit 10 Output terminal 11 Bias voltage source 12 D / A converter
Claims (4)
高周波信号のレベルを検出する高周波信号レベル検出回
路において、 前記半導体ダイオードに印加するバイアスを、高周波信
号を最適な効率で検波できる第１の電圧と、高周波信号
の振幅より充分大きい第２および第３の電圧の３段階に
階段上に周期的に変化させる手段と、 前記第２、第３の電圧のバイアスに対する半導体ダイオ
ードの電流値から、前記半導体ダイオードのその時点の
温度での電圧−電流特性を計算する手段と、 計算された前記電圧−電流特性により前記第１の電圧を
最適電圧に移動させる手段とを備えることを特徴とする
高周波信号レベル検出回路。1. A high-frequency signal level detection circuit for detecting the level of a high-frequency signal by detecting with a semiconductor diode, wherein a bias applied to the semiconductor diode is a first voltage capable of detecting a high-frequency signal with optimum efficiency. Means for periodically changing the second and third voltages in a stepwise manner in three steps that are sufficiently larger than the amplitude of the high-frequency signal, and the semiconductor diode based on the current value of the semiconductor diode with respect to the bias of the second and third voltages. High-frequency signal level detection, comprising means for calculating a voltage-current characteristic at a current temperature of, and means for moving the first voltage to an optimum voltage according to the calculated voltage-current characteristic. circuit.
された前記第１の電圧の値に対する検波効率を計算し、
検波出力を補正する手段を備えることを特徴とする請求
項１記載の高周波信号レベル検出回路。2. The detection efficiency for the corrected value of the first voltage is calculated from the calculated voltage-current characteristic,
The high-frequency signal level detection circuit according to claim 1, further comprising means for correcting the detection output.
を周期的に３段階に階段上に変化させ、第１の電圧の値
は、検波に適当であって、わずかな順電流が流れる値で
あり、第２および第３の電圧の値は、入力高周波信号の
振幅より充分に大きな値であり、各電圧に対するダイオ
ード電流をサンプル検出し、第２および第３の電圧にお
ける電流値からその時点の温度におけるダイオードの電
圧−電流特性を計算し、計算結果より第１の電圧が最適
なバイアス電圧となるように補正することを特徴とする
高周波信号レベル検出方法。3. A bias voltage of a semiconductor diode for detection is periodically changed in three steps in a stepwise manner, and the value of the first voltage is a value suitable for detection and a small forward current flows. , The values of the second and third voltages are sufficiently larger than the amplitude of the input high-frequency signal, the diode current for each voltage is sample-detected, and the current values at the second and third voltages are used to determine the temperature at that time. The high-frequency signal level detecting method, characterized in that the voltage-current characteristic of the diode is calculated, and the first voltage is corrected based on the calculation result so that the bias voltage becomes an optimum bias voltage.
された前記第１の電圧の値に対する検波効率を計算し、
検波出力を補正することを特徴とする請求項３記載の高
周波信号レベル検出方法。4. A detection efficiency for the corrected value of the first voltage is calculated from the calculated voltage-current characteristic,
The high-frequency signal level detecting method according to claim 3, wherein the detection output is corrected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6116192A JP2561023B2 (en) | 1994-05-30 | 1994-05-30 | High frequency signal level detection circuit and high frequency signal level detection method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6116192A JP2561023B2 (en) | 1994-05-30 | 1994-05-30 | High frequency signal level detection circuit and high frequency signal level detection method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07321557A true JPH07321557A (en) | 1995-12-08 |
| JP2561023B2 JP2561023B2 (en) | 1996-12-04 |
Family
ID=14681119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6116192A Expired - Lifetime JP2561023B2 (en) | 1994-05-30 | 1994-05-30 | High frequency signal level detection circuit and high frequency signal level detection method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2561023B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100468077B1 (en) * | 2001-08-28 | 2005-01-26 | 엔이씨 일렉트로닉스 가부시키가이샤 | Semiconductor device capable of internally generating bias changing signal |
| US7536153B2 (en) | 2003-12-17 | 2009-05-19 | Denso Corporation | Activation signal output circuit having multiple amplifier circuits |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4267983B2 (en) | 2002-09-25 | 2009-05-27 | 株式会社豊田中央研究所 | Start signal output circuit |
| JP2004194301A (en) | 2002-11-29 | 2004-07-08 | Toyota Central Res & Dev Lab Inc | Activation signal output circuit and decision circuit |
| JP2008177748A (en) | 2007-01-17 | 2008-07-31 | Oki Electric Ind Co Ltd | High-frequency signal detection circuit |
| JP4896063B2 (en) | 2008-03-31 | 2012-03-14 | ルネサスエレクトロニクス株式会社 | Signal processing device |
-
1994
- 1994-05-30 JP JP6116192A patent/JP2561023B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100468077B1 (en) * | 2001-08-28 | 2005-01-26 | 엔이씨 일렉트로닉스 가부시키가이샤 | Semiconductor device capable of internally generating bias changing signal |
| US7536153B2 (en) | 2003-12-17 | 2009-05-19 | Denso Corporation | Activation signal output circuit having multiple amplifier circuits |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2561023B2 (en) | 1996-12-04 |
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