JPH09186526A - Detection circuit - Google Patents

Detection circuit

Info

Publication number
JPH09186526A
JPH09186526A JP44896A JP44896A JPH09186526A JP H09186526 A JPH09186526 A JP H09186526A JP 44896 A JP44896 A JP 44896A JP 44896 A JP44896 A JP 44896A JP H09186526 A JPH09186526 A JP H09186526A
Authority
JP
Japan
Prior art keywords
detection
resistors
ground
connection point
diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP44896A
Other languages
Japanese (ja)
Inventor
正彦 ▲高▼地
Masahiko Takachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP44896A priority Critical patent/JPH09186526A/en
Publication of JPH09186526A publication Critical patent/JPH09186526A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To increase a detection output twice by adopting a bipolar voltage source for a balanced detection circuit so as to reduce the output fluctuation due to temperature. SOLUTION: The resistance of resistors of the balanced circuit are selected as R1 =R4 and R2 =R3 and diodes of the circuit are selected so that the total operating resistance of diodes Dd1 and Dz1 is equal to the total operating resistance of diodes Dd2 and Dz2 . Thus, a detection output by the diodes Dd1 , Dz1 nearly twice the case when load resistors are Dd1 , Dz1 is obtained at an output terminal. Even when the operating state of the detection elements Dd1 , Dz1 or the diodes Dd2 , Dz2 is changed individually depending upon temperature, so long as the conditions above are satisfied, the effect on the detection output is suppressed. When the frequency of an input signal is high, Schottky barrier diodes are adopted for the detection elements and the diodes, then a high fidelity waveform is obtained.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、振幅変調された搬送波
から信号を復調するために正負の電圧源を用いて平衡型
回路を構成することによって温度による出力変動を低減
し、かつ検波出力を2倍に増大した高感度の検波回路に
関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention reduces the output fluctuation due to temperature by constructing a balanced type circuit using positive and negative voltage sources for demodulating a signal from an amplitude-modulated carrier, and detects the detected output. The present invention relates to a high-sensitivity detection circuit that is doubled.

【0002】[0002]

【従来の技術】従来、高周波信号の最大値Vmの略2倍
の検波電圧2Vmに変換する高感度検波回路としては、
図5に示すものがある。図において、高周波信号の負の
半周期ときにはダイオードD1をとおしてコンデンサC1
が充電され、C1の両端の電圧Vc1は高周波信号の最大
値Vmと等しくなる。次に高周波信号が正となるとコン
デンサC2はC1とD2とを通して充電される。このとき
C2にかかる電圧は高周波信号電圧とC1の電圧Vc1と
を加えたものとなるので、C2の電圧は信号の最大値V
mの略2倍となる。従って、C2に並列に接続された負
荷抵抗RLには、略2Vmの検波電圧が加えられること
になる(石橋著:わかる電子回路;日新出版株式会
社)。
2. Description of the Related Art Conventionally, as a high-sensitivity detection circuit for converting into a detection voltage 2Vm which is approximately twice the maximum value Vm of a high frequency signal,
There is one shown in FIG. In the figure, when the high frequency signal has a negative half cycle, the capacitor C1 is passed through the diode D1
Are charged, and the voltage Vc1 across C1 becomes equal to the maximum value Vm of the high frequency signal. Next, when the high frequency signal becomes positive, the capacitor C2 is charged through C1 and D2. At this time, the voltage applied to C2 is the sum of the high frequency signal voltage and the voltage Vc1 of C1. Therefore, the voltage of C2 is the maximum value V of the signal.
It is approximately twice m. Therefore, a detection voltage of about 2 Vm is applied to the load resistor RL connected in parallel with C2 (Ishihashi: Electronic circuit; Nisshin Publishing Co., Ltd.).

【0003】[0003]

【発明が解決しようとする課題】このような従来の形態
は、検波素子D2及びダイオードD1が温度により動作状
態が変化する特性を有するため、一定レベルの高周波信
号が入力しても回路が置かれた環境温度に影響されて検
波出力が変動する、という問題があった。そこで本発明
は、周囲温度に影響されず、また高感度の検波回路を提
供することを目的とする。
In such a conventional form, since the detection element D2 and the diode D1 have a characteristic that the operating state changes depending on the temperature, the circuit is placed even if a high frequency signal of a constant level is input. There was a problem that the detection output fluctuated under the influence of the environmental temperature. Therefore, an object of the present invention is to provide a detection circuit which is not affected by the ambient temperature and has high sensitivity.

【0004】[0004]

【課題を解決するための手段】本発明に係わる検波回路
は、2個の検波素子Dd1,Dd2を用いた検波回路であ
って、正の電圧源V1と負の電圧源V2との間に抵抗R
1,R2,R3,R4を直列に接続し、抵抗R2とR3の接続
点とアースとの間に検波出力端が設けられ、 また、抵
抗R1とR2の接続点からは検波素子Dd1、次いでコン
デンサC1を経てアースとの間に設けられた高周波入力
端が接続され、コンデンサC1と検波素 子Dd1との接
続点からアースにむかってダイオードDz1、また抵抗
R1とR2との接続点とアースとの間にコンデンサC2が
夫々接続され、さらに、アースから抵抗R3とR4の接続
点にむかってダイオードDz2、次いで検波素子Dd2が
接続されたことを特徴とする。
A detection circuit according to the present invention is a detection circuit using two detection elements Dd1 and Dd2, and a resistance is provided between a positive voltage source V1 and a negative voltage source V2. R
1, R2, R3, R4 are connected in series, a detection output terminal is provided between the connection point of the resistors R2 and R3 and the ground, and the detection element Dd1 and then the capacitor from the connection point of the resistors R1 and R2. The high-frequency input terminal provided between C1 and the ground is connected, and the diode Dz1 is connected to the ground from the connection point between the capacitor C1 and the detector element Dd1 and the connection point between the resistors R1 and R2 and the ground. A capacitor C2 is connected between them, and further, a diode Dz2 and then a detection element Dd2 are connected from the ground to the connection point of the resistors R3 and R4.

【0005】また、本発明に係わる他の検波回路は、2
個の検波素子Dd1,Dd2を用いた検波回路であって、
正の電圧源V1と負の電圧源V2との間に抵抗R1,R
2,R3,R4を直列に接続し、抵抗R2とR3の接続点と
アースとの間に検波出力端が設けられ、 また、アース
との間に設けられた高周波入力端から抵抗R3とR4の接
続点にむかってコンデンサC1、次いで検波素子Dd1が
接続され、アースからコンデンサC1と検波素子Dd1と
の接続点にむかってダイオードDz1、また抵抗R3とR
4との接続点とアースとの間にコンデンサC2が夫々接続
され、さらに、抵抗R1とR2の接続点からアースにむか
って検波素子Dd2、次いでダイオードDz2が接続され
たことを特徴とする。
Another detection circuit according to the present invention is 2
A detection circuit using a plurality of detection elements Dd1 and Dd2,
Resistors R1 and R are provided between the positive voltage source V1 and the negative voltage source V2.
2, R3, R4 are connected in series, a detection output end is provided between the connection point of the resistors R2 and R3 and the ground, and a high frequency input end provided between the ground and the resistors R3 and R4. The capacitor C1 and then the detection element Dd1 are connected toward the connection point, and the diode Dz1 and the resistors R3 and R are connected from the ground to the connection point between the capacitor C1 and the detection element Dd1.
A capacitor C2 is connected between the connection point with 4 and the ground, and a detection element Dd2 and then a diode Dz2 are connected from the connection point between the resistors R1 and R2 to the ground.

【0006】[0006]

【作用】上記の構成によれば、本発明は、正負の電圧源
を用いて平衡型回路を構成することによって温度による
出力変動を低減し、かつ検波出力を2倍に増大した高感
度の検波回路を得ることができる。さらに、平衡型回路
を構成する抵抗がR1=R4,R2=R3であり、かつ、ダ
イオードDd1とDz1の動作抵抗を加えた値とDd2と
Dz2の動作抵抗を加えた値とが等しくなるように選択
することによって一層効果を上げることができる。
According to the above construction, the present invention reduces the output fluctuation due to temperature by constructing a balanced circuit using positive and negative voltage sources, and doubles the detection output with high sensitivity. The circuit can be obtained. Furthermore, the resistors forming the balanced circuit are R1 = R4 and R2 = R3, and the value obtained by adding the operating resistances of the diodes Dd1 and Dz1 is equal to the value obtained by adding the operating resistances of Dd2 and Dz2. The effect can be further enhanced by selecting it.

【0007】[0007]

【実施例】以下、添付図面を参照して本発明の実施例を
説明する。なお、図面の説明において同一要素には同一
符号を付し、重複する説明を省略する。図1は本実施例
に係わる検波回路の構成を示す回路図であり、振幅変調
された搬送波から信号を復調するために2個の検波素子
Dd1,Dd2を用いた検波回路であって、正の電圧源V
1と負の電圧源V2との間に抵抗R1,R2,R3,R4を直
列に接続し、抵抗R2とR3の接続点とアースとの間に検
波出力端が設けられ、また、抵抗R1とR2の接続点から
は検波素子Dd1、次いでコンデンサC1を経てアースと
の間に設けられた高周波入力端が接続され、コンデンサ
C1と検波素 子Dd1との接続点からアースにむかって
ダイオードDz1、また抵抗R1とR2との接続点とアー
スとの間にコンデンサC2が夫々接続され、さらに、ア
ースから抵抗R3とR4の接続点にむかってダイオードD
z2、次いで検波素子Dd2が接続されている。
Embodiments of the present invention will be described below with reference to the accompanying drawings. In the description of the drawings, the same elements will be denoted by the same reference symbols, without redundant description. FIG. 1 is a circuit diagram showing a configuration of a detection circuit according to the present embodiment, which is a detection circuit using two detection elements Dd1 and Dd2 for demodulating a signal from an amplitude-modulated carrier wave. Voltage source V
Resistors R1, R2, R3, and R4 are connected in series between 1 and the negative voltage source V2, and a detection output terminal is provided between the connection point of the resistors R2 and R3 and the ground. From the connection point of R2, the detection element Dd1 is connected, and then the high frequency input terminal provided between the capacitor C1 and the ground is connected. From the connection point of the capacitor C1 and the detection element Dd1 to the ground, the diode Dz1, or A capacitor C2 is connected between the connection point of the resistors R1 and R2 and the ground, and a diode D is connected from the ground to the connection point of the resistors R3 and R4.
z2 and then the detection element Dd2 are connected.

【0008】次いで、この回路の動作を図3、図4を用
いて説明する。図3において、入力端に信号が入力され
ない状態では、R1にはi1+i2、R2にはi2,R3には
i2、R4にはi2+i3の電流が流れる。ここで、Dd1
とDz1の動作抵抗を加えた値とDd2とDz2の動作抵
抗を加えた値とが等しければ、R1+R2に現われる電圧
とR3+R4に現われる電圧た均衡し、検波出力端子は零
ボルトとなる。 次に、正極性の高周波信号が入力され
ても、i1の電流は変動しないで出力端子には零ボルト
が出力される。一方、コンデンサC1の入力側には正電
荷が蓄電されるため、Dz1を通してコンデンサC1の出
力側には負の電荷が蓄電され、高周波信号の最大値−V
mと等しくなる。次いで、図4に示すように、入力端子
に負極性の高周波信号が入力されると、コンデンサC1
の出力側には正極性の半周期に蓄積された−Vmと負極
性の信号が入力されたことによる−Vmが加算され、−
2Vmの電圧が生じ、i1を流れる電流は2△i1だけ増
加し、結果として出力には負の電圧が発生する。但し、
△iはDz1、Dz2が抵抗負荷の場合に対する電流増加
量とする。従って、出力端子にはDz1、Dz2が負荷抵
抗の場合に比べて略2倍の検波出力を得ることができ
る。
Next, the operation of this circuit will be described with reference to FIGS. In FIG. 3, when no signal is input to the input end, a current of i1 + i2 flows through R1, i2 flows through R2, i2 flows through R3, and i2 + i3 flows through R4. Where Dd1
If the value obtained by adding the operating resistance of Dz1 and the value obtained by adding the operating resistance of Dd2 and Dz2 are equal, the voltage appearing at R1 + R2 and the voltage appearing at R3 + R4 are balanced, and the detection output terminal becomes zero volt. Next, even if a positive polarity high frequency signal is input, the current of i1 does not fluctuate, and zero volt is output to the output terminal. On the other hand, since positive charge is stored on the input side of the capacitor C1, negative charge is stored on the output side of the capacitor C1 through Dz1, and the maximum value of the high frequency signal -V
is equal to m. Next, as shown in FIG. 4, when a negative high frequency signal is input to the input terminal, the capacitor C1
On the output side of-, -Vm accumulated in the positive half cycle and -Vm due to the input of the negative signal are added,
A voltage of 2 Vm is generated and the current through i1 is increased by 2Δi1, resulting in a negative voltage at the output. However,
Δi is the amount of current increase when Dz1 and Dz2 are resistive loads. Therefore, it is possible to obtain a detection output that is about twice as high as that in the case where Dz1 and Dz2 are load resistors at the output terminal.

【0009】また、R1=R4,R2=R3であり、かつ2
個の検波素子Dd1,Dd2あるいは2個のダイオードD
z1、Dz2は夫々常温特性及び温度特性が略等しいこ
と、より具体的には、Dd1とDz1の動作抵抗を加えた
値とDd2とDz2の動作抵抗を加えた値が等しくなるよ
うに選択すると、i1=i3となるので、i1+i2=i3
+i2となる。従って、検波素子Dd1、Dz1あるいは
ダイオードDd2、Dz2が個別に温度による動作状態が
変化する場合であっても、上記の条件を満たしている限
り、検波出力はその影響を抑えることができる。 ま
た、入力信号が高周波の場合は、検波素子Dd1、Dz1
あるいはダイオードDd2、Dz2としてはショットキー
バリアダイオードを使用することによって高忠実な波形
を得ることができる。さらに、抵抗R1,R4を抵抗R
2,R3に比し、十分大きく数十kΩに選択することによ
って、これらの抵抗値のばらつきによる出力変動を十分
抑制することができる。
Further, R1 = R4, R2 = R3, and 2
Detection elements Dd1, Dd2 or two diodes D
When z1 and Dz2 are selected such that the room temperature characteristic and the temperature characteristic are substantially equal to each other, and more specifically, the value obtained by adding the operating resistances of Dd1 and Dz1 and the value obtained by adding the operating resistances of Dd2 and Dz2 are equal, Since i1 = i3, i1 + i2 = i3
It becomes + i2. Therefore, even if the detection elements Dd1 and Dz1 or the diodes Dd2 and Dz2 individually change the operating state due to temperature, the detection output can suppress the influence as long as the above conditions are satisfied. When the input signal has a high frequency, the detection elements Dd1 and Dz1
Alternatively, by using Schottky barrier diodes as the diodes Dd2 and Dz2, a high-fidelity waveform can be obtained. Further, the resistors R1 and R4 are connected to the resistor R
By selecting a value of several tens of kΩ which is sufficiently larger than 2 and R3, it is possible to sufficiently suppress the output fluctuation due to the dispersion of these resistance values.

【0010】図2は本実施例に係わる他の検波回路の構
成を示す回路図であり、振幅変調された搬送波から信号
を復調するために2個の検波素子Dd1,Dd2を用いた
検波回路であって、正の電圧源V1と負の電圧源V2との
間に抵抗R1,R2,R3,R4を直列に接続し、抵抗R2
とR3の接続点とアースとの間に検波出力端が設けら
れ、また、アースとの間に設けられた高周波入力端から
抵抗R3とR4の接続点にむかってコンデンサC1、次い
で検波素子Dd1が接続され、アースからコンデンサC1
と検波素子Dd1との接続点にむかって ダイオードDz
1、また抵抗R3とR4との接続点とアースとの間にコン
デンサC2が夫々接続され、さらに、抵抗R1とR2の接
続点からアースにむかって検波素子Dd2、次いでダイ
オードDz2が接続されている。この回路についても上
記図1の場合と同様の作用によって、出力端子には正の
電圧を発生させることができる。
FIG. 2 is a circuit diagram showing the configuration of another detection circuit according to this embodiment, which is a detection circuit using two detection elements Dd1 and Dd2 for demodulating a signal from an amplitude-modulated carrier. Therefore, resistors R1, R2, R3, and R4 are connected in series between the positive voltage source V1 and the negative voltage source V2, and the resistor R2
A detection output end is provided between the connection point of R3 and R3 and the ground, and a capacitor C1 and a detection element Dd1 are connected from the high frequency input end provided between the ground and the connection point of the resistors R3 and R4. Connected and ground to capacitor C1
Diode Dz toward the connection point between the detector and the detection element Dd1
1, a capacitor C2 is connected between the connection point of the resistors R3 and R4 and the ground, and a detection element Dd2 and then a diode Dz2 are connected from the connection point of the resistors R1 and R2 to the ground. . With this circuit as well, a positive voltage can be generated at the output terminal by the same operation as in the case of FIG.

【0011】[0011]

【発明の効果】以上説明したように、正負の電圧源を用
いて平衡型回路を構成することによって温度による出力
変動を低減し、かつ検波出力を2倍に増大した高感度の
検波回路を得ることができる。さらに、平衡型回路を構
成する抵抗がR1=R4,R2=R3であり、かつ、ダイオ
ードDd1とDz1の動作抵抗を加えた値とDd2とDz2
の動作抵抗を加えた値とが等しくなるように選択するこ
とによって一層効果を上げることができる。
As described above, by forming a balanced circuit using positive and negative voltage sources, it is possible to obtain a highly sensitive detection circuit in which the output fluctuation due to temperature is reduced and the detection output is doubled. be able to. Further, the resistances forming the balanced circuit are R1 = R4, R2 = R3, and the values obtained by adding the operating resistances of the diodes Dd1 and Dz1 to Dd2 and Dz2.
The effect can be further enhanced by selecting such that the value obtained by adding the operating resistance of is equal.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本実施例に係わる検波回路の構成を示す回路図
である。
FIG. 1 is a circuit diagram showing a configuration of a detection circuit according to this embodiment.

【図2】本実施例に係わる他の検波回路の構成を示す回
路図である。
FIG. 2 is a circuit diagram showing a configuration of another detection circuit according to the present embodiment.

【図3】本実施例の検波回路の動作を説明する回路図で
ある。
FIG. 3 is a circuit diagram illustrating an operation of the detection circuit according to the present exemplary embodiment.

【図4】本実施例の検波回路の動作を説明する回路図で
ある。
FIG. 4 is a circuit diagram illustrating an operation of the detection circuit according to the present exemplary embodiment.

【図5】従来の検波回路の構成を示す回路図である。FIG. 5 is a circuit diagram showing a configuration of a conventional detection circuit.

【符号の説明】[Explanation of symbols]

C1,C2:コンデンサ Dd1,Dd2:検波素子 Dz1,Dz2:ダイオード D1,D2:ダイオード R1,R2,R3,R4,RL:抵抗 i1,i2,i3:バイアス電流 △i:信号電流 V1,V2:電圧源 Vm:高周波信号の最大値 C1, C2: Capacitors Dd1, Dd2: Detection elements Dz1, Dz2: Diodes D1, D2: Diodes R1, R2, R3, R4, RL: Resistors i1, i2, i3: Bias currents Δi: Signal currents V1, V2: Voltages Source Vm: Maximum value of high frequency signal

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 2個の検波素子Dd1,Dd2を用いた検
波回路であって、正の電圧源V1と負の電圧源V2との間
に抵抗R1,R2,R3,R4を直列に接続し、抵抗R2と
R3の接続点とアースとの間に検波出力端が設けられ、
また、抵抗R1とR2の接続点からは検波素子Dd1、
次いでコンデンサC1を経てアースとの間に設けられた
高周波入力端が接続され、コンデンサC1と検波素子D
d1との接続点からアースにむかってダイオードDz1、
また抵抗R1とR2との接続点とアースとの間にコンデン
サC2が夫々接続され、 さらに、アースから抵抗R3とR4の接続点にむかってダ
イオードDz2、次いで検波素子Dd2が接続されたこと
を特徴とする検波回路。
1. A detection circuit using two detection elements Dd1, Dd2, wherein resistors R1, R2, R3, R4 are connected in series between a positive voltage source V1 and a negative voltage source V2. , A detection output end is provided between the connection point of the resistors R2 and R3 and the ground,
Further, from the connection point of the resistors R1 and R2, the detection element Dd1,
Next, the high frequency input terminal provided between the capacitor C1 and the ground is connected, and the capacitor C1 and the detection element D are connected.
From the connection point with d1 to the ground, diode Dz1,
Further, a capacitor C2 is connected between the connection point of the resistors R1 and R2 and the ground, and further, a diode Dz2 and then a detection element Dd2 are connected from the ground to the connection point of the resistors R3 and R4. And a detection circuit.
【請求項2】 2個の検波素子Dd1,Dd2を用いた検
波回路であって、正の電圧源V1と負の電圧源V2との間
に抵抗R1,R2,R3,R4を直列に接続し、抵抗R2と
R3の接続点とアースとの間に検波出力端が設けられ、
また、アースとの間に設けられた高周波入力端から抵抗
R3とR4の接続点にむかってコンデンサC1、次いで検
波素子Dd1が接続され、アースからコンデンサC1と検
波素子Dd1との接続点にむかってダイオードDz1、ま
た抵抗R3とR4との接続点とアースとの間にコンデンサ
C2が夫々接続され、 さらに、抵抗R1とR2の接続点からアースにむかって検
波素子Dd2、次いでダイオードDz2が接続されたこと
を特徴とする検波回路。
2. A detection circuit using two detection elements Dd1, Dd2, wherein resistors R1, R2, R3, R4 are connected in series between a positive voltage source V1 and a negative voltage source V2. , A detection output end is provided between the connection point of the resistors R2 and R3 and the ground,
Further, a capacitor C1 and then a detection element Dd1 are connected from a high frequency input end provided between the ground and a resistor R3 to R4, and from the ground to a connection point between the capacitor C1 and the detection element Dd1. A diode Dz1, a capacitor C2 is connected between the connection point of the resistors R3 and R4 and the ground, and a detection element Dd2 and then a diode Dz2 are connected from the connection point of the resistors R1 and R2 to the ground. A detection circuit characterized by that.
【請求項3】 Dd1とDz1の動作抵抗を加えた値とD
d2とDz2の動作抵抗を加えた値が等しいことを特徴と
する請求項1又は2に記載の検波回路。
3. A value obtained by adding operating resistances of Dd1 and Dz1 and D
The detection circuit according to claim 1 or 2, wherein the values obtained by adding the operating resistances of d2 and Dz2 are equal.
【請求項4】 検波素子Dd1,Dd2及びダイオードD
z1、Dz2がショットキーバリアダイオードであること
を特徴とする請求項1〜3のいづれかに記載の検波回
路。
4. A detector element Dd1, Dd2 and a diode D.
4. The detection circuit according to claim 1, wherein z1 and Dz2 are Schottky barrier diodes.
【請求項5】 抵抗R1とR4並びに抵抗R2とR3が夫々
略等しくなるように選択されたことを特徴とする請求項
1又は2に記載の検波回路。
5. The detection circuit according to claim 1, wherein the resistors R1 and R4 and the resistors R2 and R3 are selected to be substantially equal to each other.
【請求項6】 抵抗R2あるいはR3の抵抗値は夫々抵抗
R1あるいはR4の値に比して大きく、数十kΩ以上であ
ることを特徴とする請求項1、2又は5に記載の検波回
路。
6. The detection circuit according to claim 1, 2 or 5, wherein the resistance value of the resistor R2 or R3 is larger than the resistance value of the resistor R1 or R4, respectively, and is several tens kΩ or more.
JP44896A 1996-01-08 1996-01-08 Detection circuit Pending JPH09186526A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP44896A JPH09186526A (en) 1996-01-08 1996-01-08 Detection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP44896A JPH09186526A (en) 1996-01-08 1996-01-08 Detection circuit

Publications (1)

Publication Number Publication Date
JPH09186526A true JPH09186526A (en) 1997-07-15

Family

ID=11474085

Family Applications (1)

Application Number Title Priority Date Filing Date
JP44896A Pending JPH09186526A (en) 1996-01-08 1996-01-08 Detection circuit

Country Status (1)

Country Link
JP (1) JPH09186526A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8604836B2 (en) 2011-03-18 2013-12-10 Fujitsu Semiconductor Limited Detector circuit
US9261543B2 (en) 2011-02-03 2016-02-16 Rohm Co., Ltd. Power detection device and method of driving the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9261543B2 (en) 2011-02-03 2016-02-16 Rohm Co., Ltd. Power detection device and method of driving the same
US8604836B2 (en) 2011-03-18 2013-12-10 Fujitsu Semiconductor Limited Detector circuit
US8604837B2 (en) 2011-03-18 2013-12-10 Fujitsu Semiconductor Limited Detector circuit

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