JPH05209788A - Photocurrent detecting circuit - Google Patents

Photocurrent detecting circuit

Info

Publication number
JPH05209788A
JPH05209788A JP1590592A JP1590592A JPH05209788A JP H05209788 A JPH05209788 A JP H05209788A JP 1590592 A JP1590592 A JP 1590592A JP 1590592 A JP1590592 A JP 1590592A JP H05209788 A JPH05209788 A JP H05209788A
Authority
JP
Japan
Prior art keywords
photocurrent
resistor
transistor
photodiode
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1590592A
Other languages
Japanese (ja)
Inventor
Kenta Noda
健太 野田
Hironori Irie
裕紀 入江
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1590592A priority Critical patent/JPH05209788A/en
Publication of JPH05209788A publication Critical patent/JPH05209788A/en
Pending legal-status Critical Current

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Landscapes

  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

PURPOSE:To eliminate the need for a circuit which detects photocurrent at an anode of a photo diode, reduce input capacity, enlarge a band, or improve maximum input level since no bias voltage is reduced due to resistance when photocurrent is large. CONSTITUTION:When the value of a first resistor 1 is made equal to that of a second resistor 2, collector currents of both transistors become equal since the base potentials of a first transistor 3 and a second transistor are equal, thus constituting a current mirror circuit. Since the collector current of a second transistor 4 is equal to photocurrent of a photo diode 5, the photocurrent of the photo diode 5 can be detected by allowing the current to flow to a detection resistor 8.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、光受信器の光電流検出
回路に関し、フォトダイオードから前置増幅器にかけて
の余分な回路を除き、入力容量を減らすことで帯域を拡
大することのできるものに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photocurrent detection circuit for an optical receiver, which can eliminate the extra circuit from the photodiode to the preamplifier and reduce the input capacitance to extend the band. ..

【0002】[0002]

【従来の技術】従来例としては、特願昭63-246942号公
報に記載されているように、フォトダイオードのアノー
ドに抵抗を接続し、この抵抗にかかる電圧を測定するこ
とによりフォトダイオードを流れる電流を検出してい
た。
2. Description of the Related Art As a conventional example, as described in Japanese Patent Application No. 63-246942, a resistor is connected to the anode of the photodiode and the voltage applied to this resistor is measured to flow through the photodiode. The current was being detected.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、上記従
来技術では、抵抗及び測定端子または測定素子を設ける
ことにより、前置増幅器の入力容量が増加し、結果的に
増幅帯域が制限される。また、光電流が大きいときには
抵抗の両端に発生する電圧が増加するため、フォトダイ
オードのバイアス電圧が減少し、フォトダイオード自体
の帯域が制限される。
However, in the above conventional technique, the input capacitance of the preamplifier is increased by providing the resistance and the measurement terminal or the measurement element, and as a result, the amplification band is limited. Further, when the photocurrent is large, the voltage generated across the resistor increases, so that the bias voltage of the photodiode decreases and the bandwidth of the photodiode itself is limited.

【0004】本発明では、フォトダイオードのバイアス
回路にカレントミラー回路を用い、その電流値を検出す
ることにより前置増幅器の入力容量を増加することな
く、また光電流の大きいときにもバイアス電圧を減少さ
せることのない光電流検出回路を提供することにある。
In the present invention, a current mirror circuit is used as the bias circuit of the photodiode, and the current value is detected so that the input capacitance of the preamplifier is not increased, and the bias voltage is applied even when the photocurrent is large. It is to provide a photocurrent detection circuit that does not decrease.

【0005】[0005]

【課題を解決するための手段】上記目的は、フォトダイ
オードのバイアス回路にカレントミラー回路を用い、そ
の電流値を検出することにより、前置増幅器の入力に余
分な回路を設けることなく光電流を検出することができ
る。
The above-mentioned object is to use a current mirror circuit as a bias circuit of a photodiode and detect the current value thereof so that a photocurrent can be supplied without providing an extra circuit at the input of a preamplifier. Can be detected.

【0006】[0006]

【作用】フォトダイオードのバイアス回路にカレントミ
ラー回路を用いることで、フォトダイオードに流れる電
流と等しい電流を得ることができる。この電流を抵抗に
流し、抵抗にかかる電圧を測定することによりフォトダ
イオードに流れた光電流の値を知ることができる。
By using a current mirror circuit for the bias circuit of the photodiode, a current equal to the current flowing in the photodiode can be obtained. By passing this current through the resistor and measuring the voltage applied to the resistor, the value of the photocurrent flowing through the photodiode can be known.

【0007】[0007]

【実施例】図1に本発明の一実施例を示す。図1におい
てPNP形の第一のトランジスタ3のエミッタには第一
の抵抗1を通してバイアス回路7が接続され、ベースと
コレクタは互いに接続され、そしてフォトダイオード5
のカソードに接続されている。光信号はフォトダイオー
ド5において電気信号に変換され、前置増幅器6によっ
て増幅される。同じくPNP形の第二のトランジスタ4
のエミッタは第二の抵抗2を通してバイアス回路7が接
続され、ベースは第一のトランジスタ1のベースに接続
され、コレクタは検出抵抗8を通して接地されている。
FIG. 1 shows an embodiment of the present invention. In FIG. 1, a bias circuit 7 is connected to the emitter of a PNP type first transistor 3 through a first resistor 1, a base and a collector are connected to each other, and a photodiode 5 is provided.
Connected to the cathode. The optical signal is converted into an electric signal in the photodiode 5 and amplified by the preamplifier 6. A second PNP transistor 4
The bias circuit 7 is connected to the emitter of the transistor through the second resistor 2, the base is connected to the base of the first transistor 1, and the collector is grounded through the detection resistor 8.

【0008】第一の抵抗1と第二の抵抗2の値を等しく
すると、第一のトランジスタ3と第二のトランジスタの
ベース電位が等しいために、両方のトランジスタのコレ
クタ電流は等しくなりカレントミラー回路を構成する。
第二のトランジスタ4のコレクタ電流はフォトダイオー
ド5の光電流と等しくなるので、この電流を検出抵抗8
に流すことによりフォトダイオード5の光電流を検出す
ることができる。
If the values of the first resistor 1 and the second resistor 2 are made equal, the collector potentials of both transistors become equal because the base potentials of the first transistor 3 and second transistor are equal. Make up.
Since the collector current of the second transistor 4 becomes equal to the photocurrent of the photodiode 5, this current is detected by the detection resistor 8
The photocurrent of the photodiode 5 can be detected by applying the current to the photodiode.

【0009】[0009]

【発明の効果】本発明によれば、従来の方式のようにフ
ォトダイオードのアノードに光電流を検出する回路を必
要としないため、入力容量を減少し、帯域を拡大するこ
とができ、また、光電流が大きいときに抵抗によってバ
イアス電圧が降下することがないので最大入力レベルを
向上することができる。
According to the present invention, a circuit for detecting a photocurrent is not required in the anode of the photodiode unlike the conventional method, so that the input capacitance can be reduced and the band can be widened. Since the bias voltage does not drop due to the resistance when the photocurrent is large, the maximum input level can be improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例を示す回路図である。FIG. 1 is a circuit diagram showing an embodiment of the present invention.

【図2】従来の実施例を示す回路図である。FIG. 2 is a circuit diagram showing a conventional embodiment.

【符号の説明】[Explanation of symbols]

1…第一の抵抗、 2…第二の抵抗、 3…第一のトラ
ンジスタ、4…第二のトランジスタ、 5…フォトダイ
オード、 6…前置増幅器、7…バイアス回路、 8…
検出抵抗、 9…検出端子
1 ... 1st resistance, 2 ... 2nd resistance, 3 ... 1st transistor, 4 ... 2nd transistor, 5 ... Photodiode, 6 ... Preamplifier, 7 ... Bias circuit, 8 ...
Detection resistor, 9 ... Detection terminal

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】光受信器において、フォトダイオードのバ
イアス回路に、カレントミラー回路を用い、フォトダイ
オードの電流を検出することを特徴とする光電流検出回
路。
1. A photocurrent detection circuit for detecting a current of a photodiode by using a current mirror circuit as a bias circuit of the photodiode in an optical receiver.
JP1590592A 1992-01-31 1992-01-31 Photocurrent detecting circuit Pending JPH05209788A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1590592A JPH05209788A (en) 1992-01-31 1992-01-31 Photocurrent detecting circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1590592A JPH05209788A (en) 1992-01-31 1992-01-31 Photocurrent detecting circuit

Publications (1)

Publication Number Publication Date
JPH05209788A true JPH05209788A (en) 1993-08-20

Family

ID=11901792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1590592A Pending JPH05209788A (en) 1992-01-31 1992-01-31 Photocurrent detecting circuit

Country Status (1)

Country Link
JP (1) JPH05209788A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5936231A (en) * 1996-06-10 1999-08-10 Denso Corporation Photoelectric sensor circuit comprising an auxiliary photodiode and a current mirror circuit
WO2007043532A1 (en) * 2005-10-11 2007-04-19 Rohm Co., Ltd. Current detection circuit, light receiving device using the same, and electronic device
JP2007108238A (en) * 2005-10-11 2007-04-26 Rohm Co Ltd Current detection circuit and light receiving device using same, and electronic equipment
JP2014187075A (en) * 2013-03-21 2014-10-02 Toshiba Corp Optical coupling device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5936231A (en) * 1996-06-10 1999-08-10 Denso Corporation Photoelectric sensor circuit comprising an auxiliary photodiode and a current mirror circuit
WO2007043532A1 (en) * 2005-10-11 2007-04-19 Rohm Co., Ltd. Current detection circuit, light receiving device using the same, and electronic device
JP2007108238A (en) * 2005-10-11 2007-04-26 Rohm Co Ltd Current detection circuit and light receiving device using same, and electronic equipment
JP2007107926A (en) * 2005-10-11 2007-04-26 Rohm Co Ltd Current detection circuit, light receiving device using it, and electronic device
US7880126B2 (en) 2005-10-11 2011-02-01 Rohm Co., Ltd. Current detection circuit, light receiving device using the same, and electronic device
JP2014187075A (en) * 2013-03-21 2014-10-02 Toshiba Corp Optical coupling device
US9297973B2 (en) 2013-03-21 2016-03-29 Kabushiki Kaisha Toshiba Optical coupling device

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