JPH07312404A - Plastic molded type semiconductor device - Google Patents

Abstract

PURPOSE:To reduce the dimensions of a plastic encapsulated semiconductor device, prevent malfunction, and increase heat dissipation capability. CONSTITUTION:An inner lead 6 is electrically connected with a protruding electrode 8A arranged on the mounting surface of a plastic molded body 1, through a connection hole 9 formed in the plastic molded body 1. A protuding electrode to which a power supply is applied, out of protuding electrodes 8A arranged on the plastic molded body 1, is connected with a tab 4 through a connection hole 9 formed in the plastic molded body 1. An outer terminal to which a power supply is applied, out of outer terminals arranged on the element forming surface of a semiconductor pellet 2, is electrically connected with a tab 4 through a bonding wire.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-sealed semiconductor device, and in particular, an inner lead is electrically connected to an external terminal of a semiconductor pellet mounted on a pellet mounting surface of a tab via a bonding wire. The present invention relates to a technique effective when applied to a resin-sealed semiconductor device in which the tabs, semiconductor pellets, bonding wires, and inner leads are connected and sealed with a resin sealing body.

[0002]

The reduction of the Related Art product cost as a resin-sealed semiconductor device whose primary purpose is, QFP (Q uad F lat P ackag
e) There is a resin-sealed semiconductor device that adopts the structure. In this QFP structure resin-sealed semiconductor device, semiconductor pellets are mounted on the pellet mounting surface of the tab.

The semiconductor pellet is mainly composed of a semiconductor substrate having a rectangular planar shape. For example, a logic circuit system is mounted on the element formation surface (main surface) of the semiconductor substrate. Further, on the element formation surface of the semiconductor substrate, a plurality of external terminals (bonding pads) are arranged along each side of the outer periphery.

Outside the outer periphery of the semiconductor pellet,
A plurality of inner leads are arranged. One end (tip) of each of the plurality of inner leads is arranged along each side of the outer periphery of the semiconductor pellet, and a bonding wire is provided to each of the plurality of external terminals arranged on the element forming surface of the semiconductor pellet. Electrically connected via.

The tabs, semiconductor pellets, inner leads, bonding wires, etc. are sealed with a resin sealing body having a square planar shape. A plurality of outer leads are arranged outside the outer periphery of the resin sealing body. Each of the plurality of outer leads is arranged along each side of the outer periphery of the resin sealing body, and is formed in a gull wing shape.

The other end of each of the plurality of inner leads is arranged along each side of the outer periphery of the resin encapsulant, and is integrated with each of the plurality of water leads disposed outside the resin encapsulant. Be converted. That is, each of the plurality of inner leads is radially arranged from one side of the outer periphery of the semiconductor pellet toward one side of the outer periphery of the resin encapsulant.

The resin-encapsulated semiconductor device having the QFP structure thus configured is mounted on the mounting surface of the mounting board, and its outer leads and external terminals (electrode pads) arranged on the mounting surface of the mounting board. It is fixed with a brazing material.

[0008]

The resin-encapsulated semiconductor device has the following problems.

(1) The lead arrangement pitch on the other end side (one side of the resin encapsulant) of the inner leads is to secure the mechanical strength of the outer leads and to prevent a short circuit during mounting.
It is configured wider than the lead arrangement pitch on one end side (one side of the semiconductor pellet). Therefore, there is a problem that the length of one side of the outer periphery of the resin encapsulant is larger than the length of one side of the outer periphery of the semiconductor pellet, and the outer size of the resin-encapsulated semiconductor device is enlarged. The expansion of the external size becomes remarkable as the number of leads increases.

(2) The inner lead extends from one side of the semiconductor pellet toward one side of the resin sealing body. The length from one end to the other end of the inner lead becomes longer as the length of one side of the resin sealing body is increased due to the increase in the number of leads. For this reason, the inductance of the power supply path connecting the external terminal of the semiconductor pellet and the outer lead increases, and power supply noise is likely to occur when signals are simultaneously switched, which causes a problem that the resin-sealed semiconductor device malfunctions. . The power supply noise generated when the signals are simultaneously switched is more likely to occur due to the miniaturization of the inner leads as the number of leads increases.

(3) The heat generated by the operation of the logic circuit system mounted on the semiconductor pellet is radiated to the outside of the resin encapsulant through the resin encapsulant and the inner leads as a heat dissipation path. However, the heat dissipation path of the inner lead is
Since the length increases as the length of one side of the resin sealing body increases due to the increase in the number of leads, there is a problem in that the heat dissipation of the resin sealing type semiconductor device deteriorates. The heat dissipation of this resin-encapsulated semiconductor device further decreases with the miniaturization of the inner leads.

An object of the present invention is to provide a technique capable of reducing the outer size of a resin-sealed semiconductor device.

Another object of the present invention is to apply a technique capable of preventing malfunction of a resin-sealed semiconductor device.

Another object of the present invention is to provide a technique capable of improving the heat dissipation of the resin-sealed semiconductor device.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0016]

Among the inventions disclosed in the present application, a brief description will be given to the outline of typical ones.
It is as follows.

(1) An inner lead is electrically connected to an external terminal of a semiconductor pellet mounted on the pellet mounting surface of the tab through a bonding wire, and the tab, the semiconductor pellet, the inner lead and the bonding wire are connected. In a resin-encapsulated semiconductor device, each of which is encapsulated with a resin encapsulant, a connection hole formed in the resin encapsulant with the inner lead and a protruding electrode disposed on a mounting surface of the resin encapsulant Through electrical connection.

(2) Of the protruding electrodes arranged on the mounting surface of the resin encapsulant, the protruding electrode to which power is applied and the tab are electrically connected through a connection hole formed in the resin encapsulant. Of the external terminals of the semiconductor pellet, an external terminal to which power is applied is electrically connected to the tab through a bonding wire.

[0019]

According to the above-mentioned means (1), the outer lead is eliminated, and the lead arrangement pitch on the other end side (one side of the resin sealing body) of the inner lead is set to one end side of the inner lead (one side of the semiconductor pellet). It is possible to reduce the length of one side of the outer periphery of the resin encapsulant because it can be made equal to or close to the above. As a result, the outer size of the resin-sealed semiconductor device can be reduced.

According to the above-mentioned means (2), the power supply path between the power supply external terminal of the semiconductor pellet and the power supply projecting electrode arranged on the mounting surface of the resin encapsulant can be reduced. , It is possible to reduce power supply noise generated when signals are simultaneously switched. As a result, malfunction of the resin-encapsulated semiconductor device can be prevented.

Further, the heat generated by the operation of the circuit system mounted on the semiconductor pellet can be released to the outside of the resin-sealed body through the tab and the protruding electrode, respectively. The heat dissipation can be improved.

Further, since the inner leads to which power is applied can be eliminated, the external size of the resin-sealed semiconductor device can be reduced.

[0023]

Embodiments of the present invention will be described below along with embodiments in which the present invention is applied to a resin-sealed semiconductor device whose main purpose is to reduce product cost.

In all the drawings for explaining the embodiments, parts having the same function are designated by the same reference numerals, and the repeated description thereof will be omitted.

(Embodiment 1) FIG. 1 (a plan view showing a state in which an upper portion of a resin encapsulant is removed) showing a resin-encapsulated semiconductor device which is Embodiment 1 of the present invention, and FIG. FIG. 3 (A-shown in FIG. 1) showing the mounting surface side of the sealing body.
A sectional view taken along the line A) and FIG. 4 (BB shown in FIG. 2)
A cross-sectional view taken along the cutting line).

As shown in FIGS. 1, 2 and 3, in the resin-sealed semiconductor device, the semiconductor pellets 2 are mounted on the pellet mounting surface of the tab 4 supported by the tab suspension leads 5.
This semiconductor pellet 2 is fixed on the pellet mounting surface of the tab 4 with an insulating adhesive layer interposed.

The semiconductor pellet 2 is mainly composed of a semiconductor substrate having a rectangular planar shape. For example, a logic circuit system is mounted on the element formation surface (main surface) of the semiconductor substrate. In addition, on the element formation surface of the semiconductor substrate,
A plurality of external terminals (bonding pads) 3 are arranged along each side of the outer periphery. A signal or power is applied to the external terminal 3A and a power is applied to the external terminal 3B among the plurality of external terminals 3.

A plurality of inner leads 6 are arranged outside the outer periphery of the semiconductor pellet 2. One end (tip) of each of the plurality of inner leads 6 is arranged along each side of the outer periphery of the semiconductor pellet 2 and a plurality of external terminals 3 arranged on the element forming surface of the semiconductor pellet 2.
Each of A is electrically connected via a bonding wire 7A.

The tab 4, the tab suspension lead 5, the semiconductor pellet 2, the bonding wire 7A and the like are sealed with a resin sealing body 1 having a rectangular planar shape. The resin encapsulant 1 is formed of, for example, an epoxy resin to which a phenolic curing agent, silicone rubber and a filler are added in order to reduce stress, and is molded by a transfer molding method. A plurality of protruding electrodes 8 are arranged on the mounting surface 1A of the resin sealing body 1. The protruding electrode 8 is, for example, Pb-
It is made of a Sn-based alloy material.

The other end of each of the plurality of inner leads 6 is arranged along each side of the outer periphery of the resin sealing body 1.
That is, each of the plurality of inner leads 6 extends from one side of the outer periphery of the semiconductor pellet 2 toward one side of the outer periphery of the resin encapsulation body 1 and is radially arranged.

Each of the tab 4, the tab suspension lead 5, and the inner lead 6 is cut from the frame body of the lead frame after molding the resin sealing body 1 based on the transfer molding method. The lead frame is made of, for example, Fe-Ni (for example, Ni content 42 [%] or 50 [%]) alloy, Cu.
It is formed of a system alloy or the like.

In each of the plurality of inner leads 6, among the plurality of protruding electrodes 8 arranged on the mounting surface 1A of the resin sealing body 1, the protruding electrode 8A to which a signal is applied is the resin sealing body. Each of them is electrically connected through the connection hole 9 formed in 1. That is, the inner leads 6 and the protruding electrodes 8A arranged on the mounting surface 1A of the resin sealing body 1 are electrically connected to each other through the connection holes 9 formed in the resin sealing body 1.

As shown in FIG. 1, FIG. 2 and FIG. 4, on the tab 4, among the plurality of projecting electrodes 8 arranged on the mounting surface 1A of the resin encapsulation body 1, a projecting power source is applied. Electrode 8B
Are electrically connected through the connection hole 9 formed in the resin sealing body 1. Further, in the tab 4, among the plurality of external terminals 3 arranged on the element forming surface of the semiconductor pellet 2, the bonding wire 7B is connected to the external terminal 3B to which power is applied.
Electrically connected via. That is, the tab 4 and the protruding electrode 8B arranged on the mounting surface 1A of the resin encapsulation body 1 are electrically connected to each other through the connection hole 9 formed in the resin encapsulation body 1, and the tab 4 and the semiconductor pellet 2 are externally connected. The terminal 3B is electrically connected with the bonding wire 7B.

As shown in FIG. 5 (top view of the tab), the tab 4 is divided into eight tabs 4A, 4B, 4C, 4D, 4E, 4F, 4G, 4H. It is composed of each of. These tabs 4A, 4B, 4C,
A tab suspension lead 5 is integrated with each of 4D, 4E, 4F, 4G, and 4H.

As shown in FIG. 6 (main part plan view of FIG. 1), the semiconductor pellet 2 has logic circuits arranged in a central region 4B surrounded by a peripheral region 4A in which an input / output buffer circuit is arranged. To do. In the peripheral region 4A of the semiconductor pellet 2, the main power supply wiring 11 is provided along the outer periphery of the semiconductor pellet 2.
Each of A, the main power supply wiring 11B, and the main power supply wiring 11C extends. The main power supply wiring 11A is electrically connected to the input / output buffer circuit. The main power supply wiring 11B is electrically connected to the logic circuit. The main power supply wiring 11C is an input / output buffer circuit,
It is electrically connected to each of the logic circuits.

The tabs 4A and 4F are electrically connected to the main power supply wiring 11C via the bonding wires 7B, the external terminals 3B and the internal wirings 12, respectively. Each of the tabs 4A and 4F is provided with a protruding electrode 8B from the outside.
A reference voltage (for example, 0 [V]) is applied via.

Each of the tabs 4B, 4D and 4F is electrically connected to the main power supply wiring 11B via the bonding wire 7B, the external terminal 3B and the internal wiring 12. Each of the tab 4B, the tab 4D, and the dub 4F,
An operating voltage (for example, 3.3
[V]) is applied.

The tabs 4C and 4G are electrically connected to the main power supply wiring 11A via the bonding wires 7B, the external terminals 3B and the internal wirings 12, respectively. Each of the tabs 4C and 4G is provided with a protruding electrode 8B from the outside.
An operating voltage (for example, 5.5 [V]) is applied via the.

On the side surface in the thickness direction of the resin sealing body 1,
As shown in FIGS. 1, 2 and 3, a plurality of terminals 10A
Are placed. The plurality of terminals 10A are integrated with each of the plurality of inner leads 6. That is, the terminal 10A electrically connected to the inner lead is arranged on the side surface of the resin sealing body 1. Further, as shown in FIGS. 1, 2, 4, and 6, a plurality of terminals 10B are arranged on the side surface of the resin sealing body 1 in the thickness direction. Each of the plurality of terminals 10A has tabs 4A, 4B, 4C, 4D, and 4A.
E, 4F, 4G, and 4H are integrated with each of the tab suspension leads 5 integrated with each. That is, on the side surface of the resin sealing body 1, the tabs 4A, 4B, 4C, 4D, 4E, 4F,
A terminal 10B electrically connected to each of 4G and 4H is arranged.

As shown in FIG. 2, one protruding electrode 8A is electrically connected to each of the plurality of inner leads 6 respectively. The respective protruding electrodes 8A are arranged on three virtual lines parallel to the respective sides of the resin sealing body 1,
The distance between the adjacent protruding electrode 8A and one side of the resin sealing body 1 is different from the distance between the other protruding electrode 8A and one side of the resin sealing body. The tabs 4A, 4B, 4C,
A plurality of protruding electrodes 8B are electrically connected to each of 4D, 4E, 4F, 4G, and 4H.

The resin-encapsulated semiconductor device thus configured is mounted on the mounting surface of a mounting board such as a CPU board or a memory board, and is arranged on each of the plurality of protruding electrodes 3 and the mounting surface of the mounting board. The plurality of external terminals (external electrodes) thus formed are electrically and mechanically connected to each other.

The tab 4 is, as shown in FIG.
Divided into four, tab 4A, tab 4B, tab 4C, tab 4
You may comprise each of D. The tab 4 is shown in FIG.
As shown in FIG. 2, it may be divided into two and configured with tabs 4A and 4B, respectively.

As described above, according to this embodiment, the following operational effects can be obtained.

(1) The inner leads 6 and the protruding electrodes 8A arranged on the mounting surface 1A of the resin encapsulation body 1 are electrically connected through the connection holes 9 formed in the resin encapsulation body 1. With this configuration, the outer leads are eliminated, and the lead arrangement pitch on the other end side (one side of the resin sealing body 1) of the inner leads 6 is set to the lead arrangement pitch on one end side (one side of the semiconductor pellet 2) of the inner leads 6. Since it can be made equal to or close to, the length of one side of the outer periphery of the resin sealing body 1 can be reduced. As a result, the outer size of the resin-sealed semiconductor device can be reduced.

(2) The tab 4 and the protruding electrode 8B arranged on the mounting surface of the resin encapsulation body 1 are electrically connected through the connection hole 9 formed in the resin encapsulation body 1. With this configuration, the power supply path between the external terminal 3B of the semiconductor pellet 2 and the protruding electrode 8B arranged on the mounting surface 1A of the resin encapsulant 1 can be reduced, and therefore occurs at the time of simultaneous signal switching. Power supply noise can be reduced. As a result,
A malfunction of the resin-sealed semiconductor device can be prevented.

The heat generated by the operation of the logic circuit system mounted on the semiconductor pellet 2 is applied to the tab 4 and the protruding electrode 3.
Since it can be released to the outside of the resin-sealed body 1 via each of B, the heat dissipation of the resin-sealed semiconductor device can be improved.

The inner leads 6 to which power is applied
Therefore, the number of leads of the inner leads 6 to which a signal is applied can be increased or the outer size of the resin-sealed semiconductor device can be reduced by a corresponding amount.

(3) The tab 4 is divided into a plurality of tabs, and each of the plurality of tabs 4 is electrically connected to each of the protruding electrodes 8B to which different power sources are applied, and the plurality of tabs 4 are connected. The external terminals 3B to which different power supplies are applied are electrically connected to each other via the bonding wires 7B. With this configuration, the power supply path can be formed independently for each type of power supply, so that power supply noise generated when signals are simultaneously switched can be reduced. As a result, malfunction of the resin-encapsulated semiconductor device can be prevented.

(4) A terminal 10 electrically connected to the inner lead 6 on the side surface in the thickness direction of the resin sealing body 1.
Place A. With this configuration, after mounting the resin-encapsulated semiconductor device on the mounting surface of the mounting substrate, it is possible to electrically connect the inspection device to the terminal 10A and inspect a short circuit or the like between the protruding electrodes 8A. The reliability of the sealed semiconductor device can be improved.

Further, even after the resin-sealed semiconductor device is mounted on the mounting surface of the mounting substrate, the jumper wiring can be connected to the terminal 10A even if the signal path is changed, so that the debugging efficiency is improved. be able to.

(5) A terminal 10B electrically connected to the suspension lead 5 is arranged on the side surface of the resin sealing body 1 in the thickness direction. With this configuration, after the resin-encapsulated semiconductor device is mounted on the mounting surface of the mounting substrate, the inspection device can be electrically connected to the terminal 10B to inspect a short circuit between the protruding electrodes 8B. The reliability of the sealed semiconductor device can be improved.

Even after the resin-sealed semiconductor device is mounted on the mounting surface of the mounting board, the jumper wiring can be connected to the terminal 10B even if the power supply path is changed, so that the debugging efficiency is improved. be able to.

(6) External terminal 3 of the semiconductor pellet 2
And since the connection path between the bump electrode 8 does not use the wiring board, BGA using wiring board (B all G rid A r
The manufacturing cost can be reduced as compared with a ray) type semiconductor device.

Example 2 A schematic structure of a resin-sealed semiconductor device according to Example 2 of the present invention is shown in FIG. 9 (cross-sectional view) and FIG. 10 (cross-sectional view).

As shown in FIGS. 9 and 10, in the resin-sealed semiconductor device, the semiconductor pellets 2 are mounted on the pellet mounting surface of the tab 4 supported by the tab suspension leads 5. A bonding wire 7 is attached to the external terminal 3A of the semiconductor pellet 2.
The inner lead 6 is electrically connected via A. The tab 4 is divided into eight as in the case of the first embodiment described above.
Each of A and the tab 4E is electrically connected to the external terminal 3B of the semiconductor pellet 2 via the bonding wire 7B. The tab suspension lead 5, the tab 4, the semiconductor pellet 2, the bonding wires 7A, 7B, etc. are sealed with the resin sealing body 1.

On the mounting surface 1A of the resin encapsulant 1, a protruding electrode 13A having a part of the inner lead 2 protruding is arranged, and a protruding electrode 13B having a part of the tab 4 protruding.
Are placed. A signal is applied to the protruding electrode 13A, and a power source is applied to the protruding electrode 13B.

A terminal 10A electrically connected to the inner lead 6 is arranged on the side surface in the thickness direction of the resin sealing body 1. Further, terminals 10B electrically connected to the tabs 4A and the tabs 4E are arranged on the side surface of the resin sealing body 1.

The resin-encapsulated semiconductor device of this embodiment having the above-described structure has the same effects as those of the above-described Embodiment 1, and the inner lead 6 of the inner lead 6 is mounted on the mounting surface 1A of the resin-sealed body 1. Since the protruding electrode 13A with a part thereof protruding and the protruding electrode 13B with a part of the tab 4 protruding are respectively arranged,
The manufacturing cost can be reduced as compared with the resin-sealed semiconductor device in which the protruding electrode 8 is arranged on the mounting surface 1A of the resin-sealed body 1.

As described above, the invention made by the present inventor is
Although the specific description has been given based on the above-described embodiments, the present invention is not limited to the above-described embodiments, and it goes without saying that various modifications can be made without departing from the scope of the invention.

[0060]

The effects obtained by the typical ones of the inventions disclosed in the present application will be briefly described as follows.

The outer size of the resin-sealed semiconductor device can be reduced.

Further, it is possible to prevent malfunction of the resin-sealed semiconductor device.

Further, the heat dissipation of the resin-sealed semiconductor device can be improved.

[Brief description of drawings]

FIG. 1 is a plan view showing a state where an upper portion of a resin sealing body of a resin sealing type semiconductor device which is Embodiment 1 of the present invention is removed.

FIG. 2 is a plan view of a principal part showing a mounting surface side of a resin sealing body of the resin sealing type semiconductor device.

3 is a cross-sectional view taken along the line AA shown in FIG.

FIG. 4 is a cross-sectional view taken along the line BB shown in FIG.

FIG. 5 is a plan view of the tab.

6 is a plan view of an essential part of FIG.

FIG. 7 is a plan view showing a modified example of the tab.

FIG. 8 is a plan view showing a modified example of the tab.

FIG. 9 is a sectional view of a resin-sealed semiconductor device that is Embodiment 2 of the present invention.

FIG. 10 is a sectional view of the resin-encapsulated semiconductor device.

[Explanation of symbols]

1 ... Resin encapsulant, 1A ... Mounting surface, 2 ... Semiconductor pellet,
3 ... External terminal, 4 ... Tab, 5 ... Tab suspension lead, 6 ... Inner lead, 7A, 7B ... Bonding wire, 8 ...
Projection electrodes, 9 ... Connection holes, 10A, 10B ... Terminals, 11
A, 11A, 11B, 11C ... Main power supply wiring, 12 ... Internal wiring, 13A, 13B ... Projection electrodes.

Claims (10)

[Claims] 1. An inner lead is electrically connected to an external terminal of a semiconductor pellet mounted on a pellet mounting surface of a tab through a bonding wire, and each of the tab, the semiconductor pellet, the bonding wire, and the inner lead. In a resin-encapsulated semiconductor device in which is encapsulated with a resin encapsulant, the inner leads and the protruding electrodes arranged on the mounting surface of the resin encapsulant are passed through connection holes formed in the resin encapsulant. A resin-sealed semiconductor device, which is electrically connected. 2. The resin-encapsulated semiconductor device according to claim 1, wherein among the protruding electrodes arranged on the mounting surface of the resin encapsulant, the protruding electrode to which power is applied and the tab are the resin. Of the external terminals of the semiconductor pellet, the external terminals to which a power source is applied and the tabs are electrically connected to each other through a bonding wire. A resin-encapsulated semiconductor device characterized by the above. 3. The resin-encapsulated semiconductor device according to claim 2, wherein the dub is divided into a plurality of dubs, and each of the plurality of dubs is a protrusion arranged on the mounting surface of the resin encapsulant. Of the electrodes, each of the plurality of dubs electrically connected to each of the protruding electrodes to which different power sources are applied,
Among the external terminals of the semiconductor pellet, external terminals to which different power supplies are applied are electrically connected to each other via bonding wires, and a resin-sealed semiconductor device is provided. 4. Any one of claims 1 to 3
In the resin-encapsulated semiconductor device according to the item 1, a terminal electrically connected to the inner lead is arranged on a side surface of the resin encapsulant in a thickness direction. apparatus. 5. Any one of claims 2 to 4
Item 6. The resin-encapsulated semiconductor device according to Item 4, wherein a terminal electrically connected to the tab is arranged on a side surface in the thickness direction of the resin encapsulant. . 6. An inner lead is electrically connected to an external terminal of a semiconductor pellet mounted on a pellet mounting surface of a tab via a bonding wire, and each of the tab, the semiconductor pellet, the bonding wire, and the inner lead is In a resin-encapsulated semiconductor device encapsulated with a resin encapsulant, a protruding electrode having a part of the inner lead protruding is disposed on a mounting surface of the resin encapsulant. Static semiconductor device. 7. The resin-encapsulated semiconductor device according to claim 6, wherein a protruding electrode in which a part of the tab is protruded is arranged on a mounting surface of the resin encapsulant, and the tab is the semiconductor pellet. Among the external terminals, a resin-encapsulated semiconductor device is electrically connected to an external terminal to which power is applied via a bonding wire. 8. The resin-encapsulated semiconductor device according to claim 7, wherein the dub is divided into a plurality of pieces, and each of the plurality of dubs is one of the external terminals of the semiconductor pellet.
A resin-encapsulated semiconductor device, which is electrically connected to each of external terminals to which different power supplies are applied via bonding wires. 9. Any one of claims 6 to 8.
In the resin-encapsulated semiconductor device according to the item 1, a terminal electrically connected to the inner lead is arranged on a side surface of the resin encapsulant in a thickness direction. apparatus. 10. Any one of claims 7 to 9
Item 6. The resin-encapsulated semiconductor device according to Item 4, wherein a terminal electrically connected to the tab is arranged on a side surface in the thickness direction of the resin encapsulant. .