JPH07307353A - Curing device - Google Patents
Curing deviceInfo
- Publication number
- JPH07307353A JPH07307353A JP6097232A JP9723294A JPH07307353A JP H07307353 A JPH07307353 A JP H07307353A JP 6097232 A JP6097232 A JP 6097232A JP 9723294 A JP9723294 A JP 9723294A JP H07307353 A JPH07307353 A JP H07307353A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- heating
- furnace body
- heating means
- curing device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Die Bonding (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、基板を適切に加熱でき
るようにしたキュア装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a curing device capable of appropriately heating a substrate.
【０００２】[0002]
【従来の技術】電子部品を製造する工程には、基板（リ
ードフレーム又はセラミック基板など）にボンディング
ペーストを塗布し、ボンディングペースト上にダイを搭
載した後、このボンディングペーストを硬化させ、基板
にダイを接着するキュア工程がある。このキュア工程
は、炉体を備えるキュア装置内において基板を搬送する
ことにより、炉体内に設けられた加熱手段で基板を加熱
して行われる。2. Description of the Related Art In the process of manufacturing electronic components, a bonding paste is applied to a substrate (lead frame or ceramic substrate, etc.), a die is mounted on the bonding paste, the bonding paste is cured, and the die is mounted on the substrate. There is a curing process for adhering. This curing step is performed by transporting the substrate in a curing device having a furnace body so that the heating means provided in the furnace body heats the substrate.
【０００３】[0003]
【発明が解決しようとする課題】さてキュア装置の第１
の従来例として、実開平３−１２００３７号公報に示さ
れているように、炉体内全域にわたって所定温度に加熱
されたヒータブロック上に基板を直接接着させるものが
ある。しかしながら、このものでは、炉体の出口付近に
おいて基板に過剰な熱が加わり、ボンディングペースト
などに含まれる有害成分が多量に蒸発して基板の電極等
に付着して後工程におけるボンディング品質が低下しや
すいし、基板とヒータブロック面の繰り返し接触動作に
より、基板の変形等が発生し易いという問題点があっ
た。The first of the curing devices is described below.
As a conventional example of the above, as disclosed in Japanese Utility Model Publication No. 3-120037, there is one in which a substrate is directly adhered onto a heater block heated to a predetermined temperature over the entire furnace body. However, in this case, excessive heat is applied to the substrate near the exit of the furnace body, a large amount of harmful components contained in the bonding paste and the like are evaporated and adhered to the electrodes and the like of the substrate, which deteriorates the bonding quality in the subsequent process. In addition, there is a problem that the substrate is likely to be deformed due to the repeated contact operation between the substrate and the heater block surface.
【０００４】またキュア装置の第２の従来例として、特
開平３−２０６６２８号公報に示されるように、炉体内
の全域にわたって、加熱手段から基板を離した状態を保
持したまま、基板に加熱手段により熱せられた窒素ガス
などを吹付けるものが提案されている。しかしながらこ
のものでは、基板が室温程度からキュア温度（通常２０
０℃以上）に達するまで長時間を要し、キュア工程のタ
クトタイムが増大するという問題点があった。また、炉
体内を複数のステージに分け、各ステージにおける窒素
ガスの温度を異ならしめ、所定の温度プロファイルを実
現しようとする際、各ステージの窒素ガス同士（温度が
相違する）が干渉してしまい、炉体の各ステージを仕切
る仕切壁のような手段を設けないと温度コントロールが
極めて困難になるという問題点があった。As a second conventional example of the curing device, as disclosed in Japanese Patent Laid-Open No. 3-206628, the heating means is applied to the substrate while keeping the state in which the substrate is separated from the heating means throughout the entire furnace body. It has been proposed to spray heated nitrogen gas. However, in this case, the substrate is from room temperature to the curing temperature (usually 20
It takes a long time to reach 0 ° C. or higher), which causes a problem that the takt time in the curing process increases. Further, when the furnace body is divided into a plurality of stages and the temperature of the nitrogen gas in each stage is made different so as to realize a predetermined temperature profile, the nitrogen gas (difference in temperature) of each stage interferes with each other. However, there is a problem that temperature control becomes extremely difficult unless a means such as a partition wall for partitioning each stage of the furnace body is provided.
【０００５】そこで本発明は、基板の温度管理を適切か
つ合理的に行うことができるキュア装置を提供すること
を目的とする。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a curing device capable of appropriately and rationally controlling the temperature of a substrate.
【０００６】[0006]
【課題を解決するための手段】本発明のキュア装置は、
炉体と、炉体内に不活性ガスを供給するガス供給手段
と、炉体の入口から出口へ向けて基板を搬送する搬送手
段と、炉体の入口側に設けられ、かつ基板の下面側に接
触して基板を加熱する第１の加熱手段と、炉体の出口側
に設けられ、かつ基板に接触せずに基板を加熱する第２
の加熱手段とを備える。The curing device of the present invention comprises:
Furnace body, gas supply means for supplying an inert gas into the furnace body, carrying means for carrying the substrate from the entrance to the exit of the furnace body, and provided on the entrance side of the furnace body and on the lower surface side of the substrate First heating means for contacting and heating the substrate, and second heating means provided on the outlet side of the furnace body for heating the substrate without contacting the substrate.
Heating means.
【０００７】[0007]
【作用】上記構成により、炉体の入口側に設けられた第
１の加熱手段を基板に直に接触させることにより、基板
の温度をキュア温度又はキュア温度付近まで速やかに上
昇させる。次に第１の加熱手段よりも炉体の出口側に設
けられた第２の加熱手段により、基板の温度を非接触状
態において維持し、基板とヒータブロックの接触による
基板の変形の発生を低減させることができる。加えて、
非接触状態で基板を加熱している際、基板の周囲で気体
は自由に流通することができ、ボンディングペーストか
ら有機ガス成分が蒸発しても、この有機ガス成分が基板
の周囲に滞留することがなく、ワイヤボンディングパッ
ド部への付着を防止できるため、後工程におけるトラブ
ルを一層抑制することができる。さらに、基板、ダイ、
ボンディングペーストはそれぞれ比熱が相違するが、第
１の加熱手段による加熱の結果これらに温度ムラを生じ
ていても、第２の加熱手段による穏やかな加熱の結果、
この温度ムラを収束させることができ、基板全体を均一
にキュアすることができる。With the above structure, the first heating means provided on the inlet side of the furnace body is brought into direct contact with the substrate, whereby the temperature of the substrate is quickly raised to or near the cure temperature. Next, the temperature of the substrate is maintained in a non-contact state by the second heating means provided on the outlet side of the furnace body with respect to the first heating means, and the occurrence of deformation of the substrate due to contact between the substrate and the heater block is reduced. Can be made. in addition,
When heating the substrate in a non-contact state, the gas can freely flow around the substrate, and even if the organic gas component evaporates from the bonding paste, the organic gas component stays around the substrate. Since there is no problem, it is possible to prevent the wire bonding pad portion from adhering, so that it is possible to further suppress the trouble in the subsequent process. In addition, substrate, die,
The bonding pastes have different specific heats, but even if the first heating means causes unevenness in temperature as a result of heating, the second heating means results in gentle heating.
This temperature unevenness can be converged, and the entire substrate can be uniformly cured.
【０００８】[0008]
【実施例】次に図面を参照しながら本発明の一実施例を
説明する。図１は本発明の第１の実施例におけるキュア
装置の側面図である。図１中、Ｇは床面、１は床面Ｇ上
に支持ポスト２，３によって水平に支持される炉体、４
は炉体１の出口付近に設けられた給気部５を介して不活
性ガスとしての窒素ガスを供給するＮ2 供給装置、６は
連結部５の周囲に設けられ、炉体１内に送られる窒素ガ
スを加熱するヒータ、７は炉体１の下部に設けられ、炉
体１内の排気ガスの出口としての排気部、８は排気部７
から排気ガスを吸込む排気装置である。９は床面Ｇ上に
固定されるシリンダであり、そのロッド１０，１１の先
端部は昇降自在な昇降板１２に連結されている。１３，
１４は昇降板１２の両端部に立設される縦板、１５，１
６，１７，１８はそれぞれ縦板１３と縦板１４に軸支さ
れるローラであり、これらローラ１５，１６，１７，１
８に炉体１内を通過し、基板２７（図２参照）を搬送方
向Ｎ１に搬送するワイヤ１９が調帯されている。また２
０はその出力軸に軸着された駆動プーリ２１、ベルト２
２を介してローラ１６に回転力を与えるモータである。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will now be described with reference to the drawings. 1 is a side view of a curing device according to a first embodiment of the present invention. In FIG. 1, G is a floor surface, 1 is a furnace body horizontally supported by support posts 2 and 3 on the floor surface G, 4
Is an N 2 supply device that supplies nitrogen gas as an inert gas through an air supply part 5 provided near the outlet of the furnace body 1, and 6 is provided around the connection part 5 and is fed into the furnace body 1. A heater for heating the nitrogen gas to be generated, 7 is provided in the lower part of the furnace body 1, an exhaust portion as an outlet of the exhaust gas in the furnace body 1, 8 is an exhaust portion 7
It is an exhaust device that draws in exhaust gas from. Reference numeral 9 denotes a cylinder fixed on the floor surface G, and the tips of rods 10 and 11 thereof are connected to a lift plate 12 which can be lifted and lowered. 13,
Reference numeral 14 is a vertical plate which is erected on both ends of the lifting plate 12,
Reference numerals 6, 17, 18 denote rollers pivotally supported by the vertical plate 13 and the vertical plate 14, respectively.
A wire 19 that passes through the furnace body 1 and conveys the substrate 27 (see FIG. 2) in the conveyance direction N1 is provided on the belt 8. Again 2
0 is a drive pulley 21 and a belt 2 which are attached to their output shafts.
It is a motor that gives a rotational force to the roller 16 via the motor 2.
【０００９】図２は本発明の第１の実施例におけるキュ
ア装置の縦断面図である。炉体１のうち、１ａは底板、
１ｂは入口ＩＮが開けられている側板、１ｃは出口ＯＵ
Ｔが開けられている側板である。２４は底板１ａよりも
上方に空間Ｍを開けた状態で水平に固定され、各加熱ス
テージＳ１〜Ｓ８の境目に位置する開口部２３を備えた
ベース板、２５は炉体１の上部に設けられる透明板、２
６はスリットを介して２段千鳥状に配設される整流板で
あり、透明板２５及び整流板２６は炉体１内を上方から
目視できるように透明な耐熱ガラスで形成されている。
また２７は基板、２８はダイ、２９はボンディングペー
ストである。ここで、給気部５から矢印Ｎ２方向に吹き
出された高温の窒素ガスは、整流板２６のスリット間、
各加熱ステージＳ１〜Ｓ８、開口部２３、空間Ｍ、排気
部７の順に流れ、矢印Ｎ３で示すように排気装置８に回
収される。FIG. 2 is a vertical sectional view of a curing device according to the first embodiment of the present invention. Of the furnace body 1, 1a is a bottom plate,
1b is a side plate with an inlet IN opened, 1c is an outlet OU
It is a side plate in which T is opened. A base plate 24 is horizontally fixed with a space M opened above the bottom plate 1a and has an opening 23 located at the boundary between the heating stages S1 to S8, and 25 is provided on the upper part of the furnace body 1. Transparent plate, 2
Reference numeral 6 is a straightening plate arranged in a staggered two-step manner through slits. The transparent plate 25 and the straightening plate 26 are made of transparent heat-resistant glass so that the inside of the furnace body 1 can be seen from above.
27 is a substrate, 28 is a die, and 29 is a bonding paste. Here, the high-temperature nitrogen gas blown from the air supply unit 5 in the direction of the arrow N2 is discharged between the slits of the straightening plate 26,
The heating stages S1 to S8, the opening 23, the space M, and the exhaust unit 7 flow in this order and are collected by the exhaust unit 8 as indicated by an arrow N3.
【００１０】各加熱ステージＳ１〜Ｓ８にはそれぞれ上
面の高さがそれぞれ等しく、かつ熱源（カートリッジヒ
ータ）を有するヒータブロックＢ１〜Ｂ８が基板２７の
搬送方向Ｎ１に向かって等間隔に配置されている。ま
た、入口ＩＮ側の加熱ステージＳ１〜Ｓ３のヒータブロ
ックＢ１〜Ｂ３には、基板２７に直接接触して基板２７
を加熱する加熱板Ｐ１〜Ｐ３が着脱自在に装着されてい
る。一方、加熱ステージＳ４〜Ｓ８のヒータブロックＢ
４〜Ｂ８には加熱板は装着されていない。これにより本
実施例では、加熱ステージＳ１〜Ｓ３を基板２７に接触
して加熱する接触加熱ゾーンとし、加熱ステージＳ４〜
Ｓ８を基板２７を非接触で加熱する非接触加熱ゾーンと
している。ここで、基板２７の品種に応じて望ましい温
度プロファイルが相違する。そこで、図２の構成に代え
て、ヒータブロックＢ４にも加熱板を装着し、加熱ステ
ージＳ１〜Ｓ４を接触加熱ゾーンとし、加熱ステージＳ
５〜Ｓ８を非接触加熱ゾーンとするなど、接触加熱ゾー
ンと非接触加熱ゾーンを簡単に変更して種々の温度プロ
ファイルに柔軟・容易に対応することができる。因みに
図２の構成では、図８（本発明の第１の実施例における
キュア装置における温度プロファイルを示すグラフ）に
示すように、加熱ゾーンＳ１〜Ｓ３において短時間にキ
ュア温度まで基板２７を加熱し、タクトタイムを短縮す
るとともに、加熱ゾーンＳ４〜Ｓ８において非接触で基
板２７の温度を維持することにより、基板２７を過剰に
加熱せず熱的なダメージを抑制できるだけでなく、有害
成分が蒸発しても基板２７周囲において気体が自由に流
通できるため、直ちに排気装置８側へ回収され有害成分
が基板２７の周囲に滞留しない。したがって、基板２７
のボンディング性が劣化しないようにすることができ
る。The heating stages S1 to S8 are provided with heater blocks B1 to B8 having the same height on the upper surface and having heat sources (cartridge heaters) arranged at equal intervals in the transport direction N1 of the substrate 27. . Further, the heater blocks B1 to B3 of the heating stages S1 to S3 on the inlet IN side are in direct contact with the substrate 27 and
Heating plates P1 to P3 for heating are attached detachably. On the other hand, the heater block B of the heating stages S4 to S8
No heating plate is attached to 4-B8. As a result, in this embodiment, the heating stages S1 to S3 are contact heating zones for contacting and heating the substrate 27, and the heating stages S4 to S4 to
S8 is a non-contact heating zone for heating the substrate 27 in a non-contact manner. Here, the desired temperature profile differs depending on the type of substrate 27. Therefore, instead of the configuration of FIG. 2, a heating plate is also attached to the heater block B4, and the heating stages S1 to S4 are used as contact heating zones, and the heating stage S
The contact heating zone and the non-contact heating zone can be easily changed, such as 5 to S8 being the non-contact heating zone, to flexibly and easily cope with various temperature profiles. By the way, in the configuration of FIG. 2, as shown in FIG. 8 (graph showing a temperature profile in the curing device in the first embodiment of the present invention), the substrate 27 is heated to the curing temperature in a short time in the heating zones S1 to S3. By shortening the tact time and maintaining the temperature of the substrate 27 in the heating zones S4 to S8 in a non-contact manner, not only the substrate 27 is not overheated but thermal damage can be suppressed, but also harmful components are evaporated. However, since the gas can freely flow around the substrate 27, the harmful components that are immediately recovered to the exhaust device 8 side do not stay around the substrate 27. Therefore, the substrate 27
It is possible to prevent the bondability of the same from deteriorating.
【００１１】次に図３〜図８を参照しながら、加熱手段
について詳細に説明する。図３は本発明の第１の実施例
におけるキュア装置の加熱板付近の平面図であり、加熱
ステージＳ３を上方から見たものである。また図４は本
発明の第１の実施例におけるキュア装置のＡ−Ａ線断面
図、図５は本発明の第１の実施例におけるキュア装置の
Ｂ−Ｂ線断面図である。Next, the heating means will be described in detail with reference to FIGS. FIG. 3 is a plan view of the vicinity of the heating plate of the curing device in the first embodiment of the present invention, which is a view of the heating stage S3 seen from above. 4 is a sectional view taken along the line AA of the curing device in the first embodiment of the present invention, and FIG. 5 is a sectional view taken along the line BB of the curing device in the first embodiment of the present invention.
【００１２】図３において、３０〜３２は加熱板Ｐ３の
上面に、搬送方向Ｎ１と平行に刻まれた溝であり、これ
らの溝３０〜３２内に基板２７を搬送するワイヤ１９が
出入りできるようになっている。また、３５〜３８は加
熱板Ｐ３の上面に開口する吸引孔であり、基板２７を加
熱板Ｐ３上に載置すると、ダイ２８が丁度吸引孔３５〜
３８の真上に位置するように配置されている。そして吸
引孔３５〜３８には、枝管３９〜４２及び本管４３を介
して吸引装置４４による負圧が作用する。したがって加
熱ステージＳ３においては、第１の加熱手段に対応する
ヒートブロックＢ３及び加熱板Ｐ３に、基板２７の下面
を吸着して基板２７を加熱板Ｐ３に密着させる吸引孔３
５〜３８が備えられている。このため、加熱板Ｐ３の熱
を効率良く、しかも均一に基板２７に伝えることができ
る。また、基板２７のサイズが変更される際、使用する
吸引孔、溝を変更すべき場合が多いが、本実施例では、
吸引孔３５〜３８と溝３０〜３２とが複数設けられてい
るため、吸引孔と溝のうち使用する組合せを便宜変更す
ることにより、基板２７のサイズの変更に柔軟に対応で
きる。In FIG. 3, reference numerals 30 to 32 denote grooves formed on the upper surface of the heating plate P3 in parallel with the carrying direction N1 so that the wire 19 for carrying the substrate 27 can enter and leave the grooves 30 to 32. It has become. Further, 35 to 38 are suction holes opened on the upper surface of the heating plate P3, and when the substrate 27 is placed on the heating plate P3, the die 28 is just sucked into the suction holes 35 to 35.
It is arranged so as to be located right above 38. Then, a negative pressure by the suction device 44 acts on the suction holes 35 to 38 via the branch pipes 39 to 42 and the main pipe 43. Therefore, in the heating stage S3, the suction holes 3 for adsorbing the lower surface of the substrate 27 to the heating block B3 and the heating plate P3 corresponding to the first heating means to bring the substrate 27 into close contact with the heating plate P3.
5 to 38 are provided. Therefore, the heat of the heating plate P3 can be efficiently and uniformly transferred to the substrate 27. In addition, when the size of the substrate 27 is changed, it is often necessary to change the suction holes and grooves to be used, but in this embodiment,
Since the plurality of suction holes 35 to 38 and the grooves 30 to 32 are provided, the size of the substrate 27 can be flexibly changed by appropriately changing the combination used among the suction holes and the grooves.
【００１３】また図３〜図５において、３３は熱源とし
てのカートリッジヒータ、３４は熱電対、４５はヒータ
ブロックＢ３をベース板２４に固定するボルト、４６は
加熱板Ｐ３をヒータブロックＢ３に着脱自在に装着する
ためのボルトであり、いずれのボルト４５，４６の取付
穴にもザグリが施してあり、ボルト４５，４６の頭部上
面が、ヒータブロックＢ３又は加熱板Ｐ３の上面から上
方へ突出しないようになっている。なお、接触加熱ゾー
ンである加熱ステージＳ１，Ｓ２においては、上記と同
様の構成となっている。また非接触加熱ゾーンである加
熱ステージＳ４〜Ｓ８では、加熱板Ｐ３などを取外した
状態となっている。3 to 5, reference numeral 33 is a cartridge heater as a heat source, 34 is a thermocouple, 45 is a bolt for fixing the heater block B3 to the base plate 24, and 46 is a heating plate P3 which can be attached to and detached from the heater block B3. Bolts for mounting on the bolts, and the mounting holes of both bolts 45 and 46 are counterbored so that the upper surfaces of the heads of the bolts 45 and 46 do not project upward from the upper surface of the heater block B3 or the heating plate P3. It is like this. The heating stages S1 and S2, which are contact heating zones, have the same configuration as described above. Further, in the heating stages S4 to S8 which are non-contact heating zones, the heating plate P3 and the like are removed.
【００１４】図６、図７は本発明の第１の実施例におけ
るキュア装置の動作説明図であり、加熱ステージＳ３，
Ｓ４付近を拡大して示している。図１も参照しながら説
明するに、まず基板２７を加熱する際には、図６に示す
ように、シリンダ９のロッド１０，１１を没入させ、昇
降板１２のレベルを下げることにより、ワイヤ１９を溝
３０〜３２に入れる。これによって、接触加熱ゾーンで
ある加熱ステージＳ１〜Ｓ３では、基板２７が加熱板Ｐ
１〜Ｐ３上に載置され加熱板Ｐ１〜Ｐ３の熱が基板２７
に直接伝えられる。一方、非接触加熱ゾーンである加熱
ステージＳ４〜Ｓ８では加熱板がないので、基板２７は
ワイヤ１９に載ったままの状態にある。次に図６に示す
加熱の１ステップが終了したら、シリンダ９のロッド１
０，１１を突出させ、図７に示すようにワイヤ１９を加
熱板Ｐ１〜Ｐ３よりも上方のレベルにして、モータ２０
を駆動して、１ステージ分基板２７を搬送方向Ｎ１に送
る。以上の動作をくり返すことにより、基板２７を順次
入口ＩＮから炉体１内へ入れ、また出口ＯＵＴから送り
出すものである。FIGS. 6 and 7 are operation explanatory views of the curing device in the first embodiment of the present invention, and the heating stage S3,
The vicinity of S4 is shown enlarged. As will be described with reference to FIG. 1 as well, when the substrate 27 is first heated, as shown in FIG. 6, the rods 10 and 11 of the cylinder 9 are retracted and the level of the lift plate 12 is lowered to lower the wire 19. Are placed in the grooves 30 to 32. As a result, in the heating stages S1 to S3 which are contact heating zones, the substrate 27 is heated by the heating plate P.
1 to P3, the heat of the heating plates P1 to P3 is applied to the substrate 27.
Be directly communicated to. On the other hand, since there is no heating plate in the heating stages S4 to S8, which are the non-contact heating zones, the substrate 27 remains on the wire 19. Next, when one step of heating shown in FIG. 6 is completed, the rod 1 of the cylinder 9 is
0 and 11 are projected, and the wire 19 is set to a level above the heating plates P1 to P3 as shown in FIG.
Is driven to feed the substrate 27 for one stage in the transport direction N1. By repeating the above operation, the substrate 27 is sequentially loaded into the furnace body 1 from the inlet IN and is fed from the outlet OUT.
【００１５】次に図９を参照しながら本発明の第２の実
施例を説明する。図９は本発明の第２の実施例における
キュア装置の縦断面図である。第２の実施例では、第１
の実施例に対し非接触加熱ゾーンの構成を変更してい
る。即ち、非接触加熱ゾーンである加熱ステージＳ４〜
Ｓ８においてヒータブロックを設けておらずワイヤ１９
に載った基板２７の下方には気流を妨げる部材が殆んど
何もない状態としている。一方、加熱ステージＳ４〜Ｓ
８の上部の整流板２６のスリットの下方に、第２の加熱
手段に対応するフィンヒータ４７を配設している。フィ
ンヒータ４７のうち、４８はヒータ部、４９はヒータ部
４８の周囲につば状に設けられるフィンである。第２の
実施例によれば、非接触加熱ゾーンにおいて基板２７の
下方に気流を妨げるものがないため、炉体１内の気流が
安定し、ほぼ一様に下向きとなるので、基板２７やダイ
２８の汚染を一層抑制できる。またヒートブロックに比
べフィンヒータは安価であるので、製造コストを低減で
きる。Next, a second embodiment of the present invention will be described with reference to FIG. FIG. 9 is a vertical sectional view of a curing device according to the second embodiment of the present invention. In the second embodiment, the first
The configuration of the non-contact heating zone is changed from that of the above example. That is, the heating stage S4, which is a non-contact heating zone,
In S8, the heater block is not provided and the wire 19
There is almost no member that obstructs the airflow below the substrate 27 placed on the substrate. On the other hand, heating stages S4 to S
A fin heater 47 corresponding to the second heating means is disposed below the slit of the straightening vane 26 on the upper part of FIG. Among the fin heaters 47, 48 is a heater portion, and 49 is a fin provided around the heater portion 48 in a brim shape. According to the second embodiment, since there is nothing obstructing the air flow below the substrate 27 in the non-contact heating zone, the air flow in the furnace body 1 is stable and becomes almost uniformly downward. The contamination of 28 can be suppressed further. Further, since the fin heater is cheaper than the heat block, the manufacturing cost can be reduced.
【００１６】[0016]
【発明の効果】本発明のキュア装置は、炉体と、炉体内
に不活性ガスを供給するガス供給手段と、炉体の入口か
ら出口へ向けて基板を搬送する搬送手段と、炉体の入口
側に設けられ、かつ基板の下面側に接触して基板を加熱
する第１の加熱手段と、炉体の出口側に設けられ、かつ
基板に接触せずに基板を加熱する第２の加熱手段とを備
えるので、第１の加熱手段により短時間に基板をキュア
温度に到達させることによりタクトタイムを短縮できる
だけでなく、第２の加熱手段によりボンディングペース
トから蒸発する有機ガス等の有害成分の影響を抑制し
て、基板の温度管理を適切・合理的に行うことができ
る。The curing apparatus of the present invention comprises a furnace body, a gas supply means for supplying an inert gas into the furnace body, a transfer means for transferring a substrate from an inlet to an outlet of the furnace body, and a furnace body First heating means provided on the inlet side and contacting the lower surface side of the substrate to heat the substrate, and second heating means provided on the outlet side of the furnace body and heating the substrate without contacting the substrate. Since the first heating means allows the substrate to reach the curing temperature in a short time, the takt time can be shortened, and the second heating means can reduce harmful components such as organic gas evaporated from the bonding paste. The influence can be suppressed and the temperature of the substrate can be controlled appropriately and rationally.
【図１】本発明の第１の実施例におけるキュア装置の側
面図FIG. 1 is a side view of a curing device according to a first embodiment of the present invention.
【図２】本発明の第１の実施例におけるキュア装置の縦
断面図FIG. 2 is a vertical sectional view of the curing device according to the first embodiment of the present invention.
【図３】本発明の第１の実施例におけるキュア装置の加
熱板付近の平面図FIG. 3 is a plan view of the vicinity of a heating plate of the curing device according to the first embodiment of the present invention.
【図４】本発明の第１の実施例におけるキュア装置のＡ
−Ａ線断面図FIG. 4 A of the curing device in the first embodiment of the present invention
-A line sectional view
【図５】本発明の第１の実施例におけるキュア装置のＢ
−Ｂ線断面図FIG. 5: B of the curing device in the first embodiment of the present invention
-B line cross section
【図６】本発明の第１の実施例におけるキュア装置の動
作説明図FIG. 6 is an operation explanatory diagram of the curing device according to the first embodiment of the present invention.
【図７】本発明の第１の実施例におけるキュア装置の動
作説明図FIG. 7 is an operation explanatory diagram of the curing device according to the first embodiment of the present invention.
【図８】本発明の第１の実施例におけるキュア装置にお
ける温度プロファイルを示すグラフFIG. 8 is a graph showing a temperature profile in the curing apparatus according to the first embodiment of the present invention.
【図９】本発明の第２の実施例におけるキュア装置の縦
断面図FIG. 9 is a vertical sectional view of a curing device according to a second embodiment of the present invention.
１ 炉体 ４ Ｎ2 供給装置 １９ ワイヤ ２０ モータ ２７ 基板 ３０ 溝 ３１ 溝 ３２ 溝 ３５ 吸引孔 ３６ 吸引孔 ３７ 吸引孔 ３８ 吸引孔 ４７ フィンヒータ ＩＮ 入口 ＯＵＴ 出口 Ｂ１ ヒータブロック Ｂ２ ヒータブロック Ｂ３ ヒータブロック Ｂ４ ヒータブロック Ｂ５ ヒータブロック Ｂ６ ヒータブロック Ｂ７ ヒータブロック Ｂ８ ヒータブロック Ｐ１ 加熱板 Ｐ２ 加熱板 Ｐ３ 加熱板1 furnace body 4 N 2 supply device 19 wire 20 motor 27 substrate 30 groove 31 groove 32 groove 35 suction hole 36 suction hole 37 suction hole 38 suction hole 47 fin heater IN inlet OUT outlet B1 heater block B2 heater block B3 heater block B4 heater Block B5 Heater block B6 Heater block B7 Heater block B8 Heater block P1 Heating plate P2 Heating plate P3 Heating plate
Claims (5)
るガス供給手段と、前記炉体の入口から出口へ向けて基
板を搬送する搬送手段と、前記炉体の入口側に設けら
れ、かつ基板の下面側に接触して基板を加熱する第１の
加熱手段と、前記炉体の出口側に設けられ、かつ基板に
接触せずに基板を加熱する第２の加熱手段とを備えるこ
とを特徴とするキュア装置。1. A furnace body, a gas supply means for supplying an inert gas into the furnace body, a carrying means for carrying a substrate from an inlet to an outlet of the furnace body, and an inlet side of the furnace body. And a second heating means which is provided on the outlet side of the furnace body and which heats the substrate without contacting the substrate. A curing device comprising:
タブロックと、前記ヒータブロックの上面に着脱自在に
装着される加熱板を備え、前記第２の加熱手段は前記加
熱板が装着されない前記ヒータブロックからなり、前記
各ヒータブロックの上面高さを均一にすると共に、前記
各ヒータブロックを前記炉体の入口から出口に向かって
等間隔に配置したことを特徴とする請求項１記載のキュ
ア装置。2. The first heating means comprises a heater block having a heat source, and a heating plate detachably mounted on the upper surface of the heater block, and the second heating means is not mounted with the heating plate. 2. The heater block, wherein each heater block has a uniform upper surface height, and the heater blocks are arranged at equal intervals from an inlet to an outlet of the furnace body. Cure device.
る請求項１記載のキュア装置。3. The curing device according to claim 1, wherein the second heating means is a fin heater.
を加熱板に密着させる吸引孔を備えることを特徴とする
請求項２記載のキュア装置。4. The curing device according to claim 2, wherein the heating plate has a suction hole for adsorbing a lower surface of the substrate to bring the substrate into close contact with the heating plate.
備え、かつ前記加熱板は、前記加熱板の上面よりも低い
レベルで前記ワイヤを通過させる複数の溝を備えること
を特徴とする請求項２記載のキュア装置。5. The transport means comprises a wire for transporting the substrate, and the heating plate comprises a plurality of grooves for passing the wire at a level lower than the upper surface of the heating plate. Item 2. A curing device according to item 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09723294A JP3156500B2 (en) | 1994-05-11 | 1994-05-11 | Cure device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09723294A JP3156500B2 (en) | 1994-05-11 | 1994-05-11 | Cure device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07307353A true JPH07307353A (en) | 1995-11-21 |
| JP3156500B2 JP3156500B2 (en) | 2001-04-16 |
Family
ID=14186884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP09723294A Expired - Fee Related JP3156500B2 (en) | 1994-05-11 | 1994-05-11 | Cure device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3156500B2 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59232430A (en) * | 1983-06-16 | 1984-12-27 | Nec Corp | Apparatus for manufacturing semiconductor element |
| JPH0252334U (en) * | 1988-10-05 | 1990-04-16 | ||
| JPH0345937U (en) * | 1989-09-11 | 1991-04-26 |
-
1994
- 1994-05-11 JP JP09723294A patent/JP3156500B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59232430A (en) * | 1983-06-16 | 1984-12-27 | Nec Corp | Apparatus for manufacturing semiconductor element |
| JPH0252334U (en) * | 1988-10-05 | 1990-04-16 | ||
| JPH0345937U (en) * | 1989-09-11 | 1991-04-26 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3156500B2 (en) | 2001-04-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3667270B2 (en) | Substrate heat treatment method and furnace equipment therefor | |
| JP2008226981A (en) | Reflow device | |
| JP2006093084A (en) | Molding system of lamp upper plate of flat plate type fluorescent lamp | |
| JPH07307353A (en) | Curing device | |
| JP3316174B2 (en) | Glass panel cooling method and apparatus | |
| JP2003332727A (en) | Heat shielding member and reflow apparatus | |
| US20040149803A1 (en) | Method of forming bumps on a wafer utilizing a post-heating operation, and an apparatus therefore | |
| JP5144492B2 (en) | Drying equipment | |
| JP3274089B2 (en) | Hybrid type heat treatment equipment | |
| TWI471966B (en) | Substrate processing system and substrate processing method | |
| JP2002313700A (en) | Heating device and cooling device | |
| JPH1022189A (en) | Substrate heat-treating device | |
| JP3208047B2 (en) | heating furnace | |
| JP2003077398A (en) | Manufacturing method of plasma display panel and furnace equipment for same | |
| US4556783A (en) | Heat welding apparatus | |
| JP3299882B2 (en) | heating furnace | |
| JP2004202384A (en) | Coating drying apparatus | |
| JP2003172583A (en) | Heat treatment device for plasma display panel | |
| JP3410000B2 (en) | Heat treatment equipment | |
| JP2001110840A (en) | Wire-bonding device and method | |
| US20240213396A1 (en) | Thermal decomposition apparatus and thermal decomposition method applying the same | |
| JPH0616072B2 (en) | Aging device | |
| JPS645757Y2 (en) | ||
| JP2005134013A (en) | Device and method for manufacturing substrate | |
| JPH0878443A (en) | Cure equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |