JPH07302978A - Metal-based multilayer circuit board - Google Patents

Metal-based multilayer circuit board

Info

Publication number
JPH07302978A
JPH07302978A JP6095080A JP9508094A JPH07302978A JP H07302978 A JPH07302978 A JP H07302978A JP 6095080 A JP6095080 A JP 6095080A JP 9508094 A JP9508094 A JP 9508094A JP H07302978 A JPH07302978 A JP H07302978A
Authority
JP
Japan
Prior art keywords
circuit board
metal
thickness
thermal conductivity
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6095080A
Other languages
Japanese (ja)
Other versions
JP3436582B2 (en
Inventor
Toshiki Saito
俊樹 斉藤
Makoto Fukuda
誠 福田
Tomohiro Miyakoshi
智寛 宮腰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denki Kagaku Kogyo KK filed Critical Denki Kagaku Kogyo KK
Priority to JP9508094A priority Critical patent/JP3436582B2/en
Publication of JPH07302978A publication Critical patent/JPH07302978A/en
Application granted granted Critical
Publication of JP3436582B2 publication Critical patent/JP3436582B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To obtain an excellent heat-dissipating property by a method wherein the thermal conductivity of each of an insulating board and an adhesive layer for an upper-layer circuit board and an insulating layer for a metal-based circuit is set at a specific value and the thickness of each of them is set within a specific range. CONSTITUTION:A metal-based multilayer circuit board has a structure in which an upper-layer circuit board composed of an insulating board 3 provided with a circuit 4 on the surface via an adhesive layer 6 is laminated on, and integrated with, a metal-based circuit board 7 forming a circuit 5 on a metal plate 1 via an insulating layer 2. A glass epoxy material, a polyimide material, a phenol material or a ceramic material is used for the insulating board 3, its thermal conductivity is at 6X10<-4> to 1.2X10<-3>cal/cm-sec deg.C, and its thickness is at 30 to 70mum. Any organic adhesive can be used for the adhesive layer, its thermal conductivity is at 3X10<-4> to 1X10<-3>cal/cm.sec deg.C, and its thickness is at 20 to 50mum. A ceramic or a polymer resin insulating layer is used for the insulating layer 2, its thermal conductivity is at 3.5X10<-3> to 1.0X10<-2>cal/cm.sec deg.C, and its thickness is at 60 to 200mum.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は金属ベース多層回路基板
に関し、特にノイズシールド性、優れた耐電圧性と良好
な熱放散性を有する金属ベース多層回路基板に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a metal-based multi-layer circuit board, and more particularly to a metal-based multi-layer circuit board having a noise shielding property, an excellent withstand voltage property and a good heat dissipation property.

【0002】[0002]

【従来の技術】近年、半導体搭載用の回路基板では基板
の小型化、高密度実装化および、半導体素子のハイパワ
ー化の要求にともない、半導体素子から発生した熱を如
何に放散するかということが問題となっている。この様
な要求のもと、近年、電源分野を中心に金属ベース回路
基板上に絶縁層を介して導電性金属箔を張り合わせた
後、回路を形成した金属ベース回路基板が優れて熱放散
性を有するため、その使用が増加してきている。しか
し、金属ベース回路基板は金属ベース基板の上に薄い絶
縁層を塗布した構造であるため、ノイズが発生しやす
く、電子モジュールの誤動作を引き起こしやすいという
問題があった。このノイズをシールドし、さらに高密度
実装化するため、例えば金属ベース回路基板上に、両面
に回路を有する上層回路基板を積層して、その上層回路
基板上に発熱性の電子部品を搭載した金属ベース多層回
路基板が使用されるようになってきている。この金属ベ
ース多層回路基板においては、上層回路基板の絶縁層で
ある絶縁基板、この上層回路基板を接着するための接着
剤層、金属ベース回路基板の絶縁層と多数の絶縁層を通
して発生した熱が放散されるが、その放散性が不十分で
あるため、電子部品の温度が上昇し、ひいては誤動作を
生ずるという問題があった。
2. Description of the Related Art In recent years, in a circuit board for mounting a semiconductor, how to dissipate heat generated from the semiconductor element in response to demands for miniaturization of the board, high density mounting and high power of the semiconductor element. Is a problem. Under these demands, in recent years, mainly in the field of power supply, a metal base circuit board on which a circuit is formed after bonding a conductive metal foil on the metal base circuit board via an insulating layer has excellent heat dissipation properties. Because of having, its use is increasing. However, since the metal base circuit board has a structure in which a thin insulating layer is applied on the metal base board, there is a problem that noise is likely to occur and an electronic module malfunctions easily. In order to shield this noise and realize higher density mounting, for example, a metal base circuit board is laminated with an upper layer circuit board having circuits on both sides, and a heat-generating electronic component is mounted on the upper layer circuit board. Base multilayer circuit boards are being used. In this metal-based multilayer circuit board, the heat generated through the insulating board, which is the insulating layer of the upper-layer circuit board, the adhesive layer for bonding the upper-layer circuit board, the insulating layer of the metal-based circuit board, and a large number of insulating layers is used. Although it is diffused, there is a problem that the temperature of the electronic component rises due to insufficient radiation, which causes malfunction.

【0003】[0003]

【発明が解決しようとする課題】本発明はかかる問題点
に鑑みてなされたものであって、金属ベース多層回路基
板を構成する各絶縁層の厚さと熱伝動率について検討
し、これらを適正に設定することにより、熱抵抗が少な
く熱放散性の良好な金属ベース多層回路基板を得ること
ができることを見出した。すなわち、本発明の目的はノ
イズシールド性及び耐電圧特性を損なうことなく、優れ
た熱放散性を有する金属ベース多層回路基板を得ること
にある。
SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and examines the thickness and the heat transfer coefficient of each insulating layer constituting a metal-based multilayer circuit board, and appropriately determines these. It has been found that a metal-based multilayer circuit board having a small heat resistance and a good heat dissipation property can be obtained by setting it. That is, an object of the present invention is to obtain a metal-based multilayer circuit board having excellent heat dissipation properties without impairing the noise shielding property and the withstand voltage characteristic.

【0004】[0004]

【課題を解決するための手段】本発明の金属ベース多層
回路基板は、金属板上の少なくとも一主面上に、絶縁層
を介して回路が形成された金属ベース回路基板の上に、
接着剤層を介して両面に回路を有する上層回路基板が積
層一体化された金属ベース多層回路基板において、
(1)前記上層回路基板の絶縁基板の熱伝導率が6×1
-4〜1.2×10-3cal/cm .sec . ℃ であり、かつ
その厚さが30〜70μmであること、(2)前記接着
剤層の熱伝導率が3×10-4〜1×10-3cal/cm .sec
. ℃であり、かつその厚さが20〜50μmであるこ
と、(3)前記金属ベース回路基板の絶縁層の熱伝導率
が3.5×10-3〜1.0×10-2cal/cm .sec . ℃で
あり、かつ厚さが60〜200μmであること、を特徴
とするものである。
A metal-based multilayer circuit board of the present invention comprises a metal base circuit board having a circuit formed on at least one main surface of a metal plate via an insulating layer,
In a metal-based multi-layer circuit board in which an upper layer circuit board having circuits on both sides via an adhesive layer is laminated and integrated,
(1) The thermal conductivity of the insulating substrate of the upper circuit board is 6 × 1.
0 -4 ~1.2 × 10 -3 cal / cm. Sec. Is ° C., and that the thickness of 30 to 70 .mu.m, (2) the thermal conductivity of the adhesive layer is 3 × 10 -4 ~1 × 10 -3 cal / cm. sec
. A ° C., and its thickness is 20 to 50 m, (3) the metal base circuit thermal conductivity of the substrate of the insulating layer is 3.5 × 10 -3 ~1.0 × 10 -2 cal / cm. sec. is ° C., and the thickness is 60~200Myuemu, is characterized in.

【0005】[0005]

【作用および実施例】以下、図面により本発明について
さらに詳細に説明する。本発明の金属ベース多層回路基
板は図1に示すように金属板1上に絶縁層2を介して回
路5が形成された金属ベース回路基板7の上に、接着剤
層6を介して両面に回路4を有する絶縁基板3からなる
上層回路基板が積層一体化された構造を有する。
The present invention will be described in more detail with reference to the drawings. As shown in FIG. 1, the metal-based multi-layer circuit board of the present invention is provided on a metal base circuit board 7 on which a circuit 5 is formed on a metal plate 1 via an insulating layer 2 and on both sides via an adhesive layer 6. It has a structure in which an upper circuit board made of an insulating board 3 having a circuit 4 is laminated and integrated.

【0006】本発明の回路基板に用いるベース金属板1
としては、良好な熱伝導性を持つアルミニウムおよびア
ルミニウム合金、銅および銅合金、鉄および鉄合金等、
あるいは銅/鉄−ニッケル系合金、アルミニウム/鉄−
ニッケル系合金などの二層あるいは、銅/鉄−ニッケル
系合金/銅、アルミニウム/鉄−ニッケル系合金/アル
ミニウムなどの三層の多層複合材料等が使用可能であ
る。また、ベース金属基板1の厚みとしては、特に制限
はないが0.5 mm〜3.0 mmが一般に用いられる。
Base metal plate 1 used in the circuit board of the present invention
As, aluminum and aluminum alloys having good thermal conductivity, copper and copper alloys, iron and iron alloys, etc.,
Or copper / iron-nickel alloy, aluminum / iron-
It is possible to use a two-layer composite material such as a nickel-based alloy or a three-layer multilayer composite material such as copper / iron-nickel-based alloy / copper and aluminum / iron-nickel-based alloy / aluminum. The thickness of the base metal substrate 1 is not particularly limited, but 0.5 mm to 3.0 mm is generally used.

【0007】回路4及び5を形成する材料は銅、アルミ
ニウム、ニッケル、鉄、錫、銀、チタニウムなどのいず
れか、またはこれらの金属を2種類以上含む合金及びそ
れぞれの金属を使用したクラッド箔が用いられる。ま
た、この時の箔の製造方法は電解法でも圧延法で作製し
たものでもよく、箔上にはNiめっき、Ni+Auめっ
き、はんだめっきなどの金属めっきがほどこされていて
もかまわない。
The material for forming the circuits 4 and 5 is copper, aluminum, nickel, iron, tin, silver, titanium or the like, or an alloy containing two or more kinds of these metals and a clad foil using each metal. Used. In addition, the method of manufacturing the foil at this time may be either an electrolytic method or a rolling method, and the foil may be subjected to metal plating such as Ni plating, Ni + Au plating, and solder plating.

【0008】前記上層回路基板は両面に回路を有し、そ
の下面の回路が磁気シールドの役目を果たす。下面の回
路は必ずしも特定の形状の回路を形成していなくても磁
気シルドの役目を果たすことが可能である。例えば、単
に板状であってもかまわない。そしてこの上層回路基板
の絶縁基板3としては、FR−4、FR−5等のガラス
エポキシ材、ポリイミド材、フェノール材及びセラミッ
クス材等の絶縁材料を用いることができる。そしてその
熱伝導率が6×10-4〜1.2×10-3cal/cm .sec .
℃ であり、かつその厚さが30〜70μmである。そ
の熱伝導率が6×10-4cal/cm .sec . ℃より小さいと
金属ベース多層回路基板の熱抵抗が大きくなり目的とす
る良好な熱放散性が得られず、1.2×10-3cal/cm .
sec . ℃より大きいものは工業的に得ることが難しい。
また、その厚さが30μmより小さいと耐電圧性が低下
し、70μmより大きいと熱抵抗が大きくなり好ましく
ない。
The upper layer circuit board has circuits on both sides.
The circuit on the underside of the serves as a magnetic shield. Bottom times
The path does not necessarily have to form a circuit of a particular shape,
It is possible to play the role of Qi Shildo. For example, simply
It may be plate-shaped. And this upper layer circuit board
As the insulating substrate 3 of, glass such as FR-4, FR-5, etc.
Epoxy material, polyimide material, phenolic material and ceramic
An insulating material such as a wax material can be used. And that
Thermal conductivity is 6 × 10-Four~ 1.2 x 10-3cal / cm .sec.
C. and its thickness is 30 to 70 .mu.m. So
Has a thermal conductivity of 6 × 10-Fourcal / cm.sec.Below ℃
The thermal resistance of the metal-based multilayer circuit board increases
1.2 × 10-3cal / cm.
sec.It is difficult to industrially obtain one having a temperature higher than ℃.
If the thickness is less than 30 μm, the withstand voltage will decrease.
However, if it is larger than 70 μm, the thermal resistance becomes large, which is preferable.
Absent.

【0009】前記上層回路基板を接着する接着剤層とし
ては、アクリル系、エポキシ系、シリコーン系、ウレタ
ン系等をはじめとしてあらゆる有機接着剤を用いること
ができる。その熱伝導率は3×10-4〜1×10-3cal/
cm .sec . ℃ でありかつ厚みが20〜50μmであ
る。その熱伝導率が3×10-4より小さいと金属ベース
多層回路基板の熱抵抗が大きくなり目的とする良好な熱
放散性が得られず、1×10-3cal/cm .sec . ℃より大
きいものは工業的に得ることが難しい。また、その厚さ
が20μmより小さいと耐電圧性が低下し、50μmよ
り大きいと熱抵抗が大きくなりし好ましくない。
As the adhesive layer for adhering the upper circuit board, any organic adhesive such as acrylic, epoxy, silicone, urethane or the like can be used. Its thermal conductivity is 3 × 10 -4 〜 1 × 10 -3 cal /
cm. sec. it is ℃ and a thickness of 20 to 50 m. Its thermal conductivity of 3 × 10 -4 smaller than the metal base good heat dissipation heat resistance and increased and interest of the multilayer circuit board can not be obtained, 1 × 10 -3 cal / cm . Sec. From ℃ Large ones are difficult to obtain industrially. If the thickness is less than 20 μm, the withstand voltage is lowered, and if it is more than 50 μm, the thermal resistance is increased, which is not preferable.

【0010】本発明に用いる前記(3)の絶縁層2とし
ては、各種セラミックス、無機粉体からなる充填材を含
有する高分子樹脂絶縁層、ガラス繊維を含有する高分子
樹脂絶縁層、および耐熱性高分子樹脂絶縁層を用いるこ
とができる。前記高分子樹脂としては、エポキシ樹脂、
フェノール樹脂、ポリイミド樹脂、各種エンジニアプラ
スチック等が用いられる。前記充填材としては、アルミ
ナ、ベリリヤ、ボロンナイトライド、マグネシア、シリ
カ、窒化ケイ素、窒化アルミ等の材質が好ましい。
The insulating layer 2 of (3) used in the present invention includes various ceramics, a polymeric resin insulating layer containing a filler made of inorganic powder, a polymeric resin insulating layer containing glass fiber, and a heat-resistant material. A polymeric polymer resin insulating layer can be used. As the polymer resin, an epoxy resin,
Phenol resin, polyimide resin, various engineered plastics, etc. are used. As the filler, materials such as alumina, beryllia, boron nitride, magnesia, silica, silicon nitride and aluminum nitride are preferable.

【0011】そしてこの絶縁層は、その熱伝導率が3.
5×10-3〜1.0×10-2cal/cm .sec . ℃であり、
かつ厚さが60〜200μmであること、その熱伝導率
が3.5×10-3より小さいと金属ベース多層回路基板
の熱抵抗が大きくなり目的とする良好な熱放散性が得ら
れず、1.0×10-2cal/cm .sec . ℃より大きいもの
は工業的に得ることが難しい。また、この絶縁層の厚さ
が60μmより小さいと耐電圧性が低下し、200μm
より大きいと熱抵抗が大きくなり好ましくない。
The thermal conductivity of this insulating layer is 3.
5 x 10-3~ 1.0 x 10-2cal / cm .sec.℃,
And the thickness is 60 to 200 μm, and its thermal conductivity
Is 3.5 × 10-3Smaller and metal based multilayer circuit board
The thermal resistance of the
Without, 1.0 × 10-2cal / cm.sec.Greater than ℃
Is difficult to obtain industrially. Also, the thickness of this insulating layer
Is less than 60 μm, the withstand voltage is reduced to 200 μm
If it is larger than the above range, the heat resistance becomes large, which is not preferable.

【0012】以下、実施例に基づき、発明の内容を具体
的に説明する。
The contents of the invention will be specifically described below based on examples.

【実施例】【Example】

〔実施例1〕まず、510×510×1.5mm tのアル
ミニウム板上に、アルミナを充填したエポキシ樹脂を塗
布し、その上に35μm厚の銅箔を張り合わせ加熱硬化
させ、熱伝導率が4.2×10-3cal/cm .sec . ℃で、
厚さ150μmの絶縁層を形成した後、エッチングによ
り所望の導電回路を形成した。次に、上面に箔厚70μ
mおよび下面に箔厚35μmの導電箔を有し、熱伝導率
が8×10-4cal/cm ・sec .℃でかつ厚みが50μmの
ガラスエポキシ基板に所望の回路及びスルーホールを形
成後、絶縁基板であるガラスエポキシ基板の下面の35
μmの箔側を接着面として予め一定形状に打ち抜かれた
熱伝導率が5×10-4cal/cm ・ sec .℃でかつ厚みが2
5μmの接着シート(デュポン社製;パイララックス)
を用いて前記のアルミニウムベースの金属ベース回路基
板の絶縁層上に張り合わせた。この金属ベース多層回路
基板の絶縁破壊電圧及び熱抵抗を測定した。絶縁破壊電
圧の測定法はJIS Z1020で規定している段階昇
圧法(AC電圧)にて測定した。また、熱抵抗及びノイ
ズシールド性については下記測定方法によって測定し
た。その結果を表1に示すが、絶縁破壊電圧は10kV
以上、熱抵抗は1.98℃/Wであった。また、ノイズ
シールド性も良好であった。
Example 1 First, an epoxy resin filled with alumina was applied on a 510 × 510 × 1.5 mm t aluminum plate, and a copper foil having a thickness of 35 μm was laminated on the epoxy resin and cured by heating. .2 × 10 -3 cal / cm. sec. at ° C.,
After forming an insulating layer having a thickness of 150 μm, a desired conductive circuit was formed by etching. Next, 70μ foil thickness on top
m and a lower surface with a conductive foil having a thickness of 35 μm, and having a thermal conductivity of 8 × 10 −4 cal / cm · sec . ° C. and a thickness of 50 μm, the desired circuit and through holes were formed on the glass epoxy substrate. 35 of the lower surface of the glass epoxy board which is an insulating board
Pre-punched into a uniform shape with the foil side of μm as the adhesive surface, the thermal conductivity is 5 × 10 -4 cal / cm · sec . ℃ and the thickness is 2
5 μm adhesive sheet (DuPont; Piralux)
Was laminated on the insulating layer of the aluminum-based metal-based circuit board described above. The breakdown voltage and thermal resistance of this metal-based multilayer circuit board were measured. The dielectric breakdown voltage was measured by the step-up method (AC voltage) specified in JIS Z1020. The thermal resistance and the noise shield property were measured by the following measuring methods. The results are shown in Table 1 and the breakdown voltage is 10 kV.
As described above, the thermal resistance was 1.98 ° C / W. Moreover, the noise shielding property was also good.

【0013】[0013]

【表1】 [Table 1]

【0014】(熱抵抗の測定方法)金属ベース回路基板
上に上層回路基板が形成された金属ベース多層回路基板
の前記上層回路基板上の導電箔をエッチングして10×
15mmのパッド部を形成し、この上にトランジスター
(TO220 、株式会社東芝製)をはんだ付けする。ベース
金属板面側を冷却し、トランジスターに通電して、絶縁
層を挟んだトランジスター側と金属板側の温度差と通電
量より熱抵抗を測定した。(デンカHITTプレートのカタ
ログに記載されている方法において、前記トランジスタ
ーを上層回路基板上にはんだ付けして行う)。
(Measuring Method of Thermal Resistance) A conductive foil on the upper layer circuit board of the metal base multilayer circuit board in which the upper layer circuit board is formed on the metal base circuit board is etched to obtain 10 ×.
A 15 mm pad portion is formed, and a transistor (TO220, manufactured by Toshiba Corporation) is soldered on this. The base metal plate surface side was cooled, and the transistor was energized, and the thermal resistance was measured from the temperature difference between the transistor side and the metal plate side sandwiching the insulating layer and the energization amount. (In the method described in the Denka HITT plate catalog, the transistor is soldered onto the upper circuit board).

【0015】(ノイズシールド性測定法)実施例1のよ
うにして得られた金属ベース多層回路基板において、金
属ベース回路基板上に形成された回路と同一の回路を上
層回路基板上に形成し、200kHzに於いて上層回路
基板上に形成された回路のみによって発生するノイズ量
から、同じく200kHzに於いて金属ベース回路基板
上に形成された回路のみによって発生するノイズ量を差
し引いた量をノイズ低減量とし、この値(dB)をノイ
ズシールド性とした。ノイズ発生量は横河ヒューレット
パッカード社製;2/4チャンネルFFTアナライザH
P25670Aにて測定した。
(Measurement Method of Noise Shielding Property) In the metal-based multilayer circuit board obtained as in Example 1, the same circuit as the circuit formed on the metal-based circuit board is formed on the upper layer circuit board, The noise reduction amount is the amount of noise generated by only the circuit formed on the upper layer circuit board at 200 kHz, minus the amount of noise generated by only the circuit formed on the metal base circuit board at 200 kHz. And the value (dB) was used as the noise shield property. The amount of noise generated is Yokogawa Hewlett Packard; 2/4 channel FFT analyzer H
It was measured by P25670A.

【0016】〔実施例2〕まず、510×510×1.
5mm tのアルミニウム板上にアルミナを填材したエポキ
シ樹脂を塗布し、その上に35μm厚の銅箔を張り合わ
せ加熱硬化させ、熱伝導率が3.5×10-3cal/cm .se
c . ℃で、厚さ60μmの絶縁層を形成した後、エッチ
ングにより所望の導電回路を形成した。次に、上面に箔
厚70μmおよび下面に箔厚35μmの導電箔を有す
る、熱伝導率が6×10-4cal/cm ・ sec .℃でかつ厚み
が30μmのガラスエポキシ基板に所望の回路及びスル
ーホールを形成後、絶縁基板であるガラスエポキシ基板
の下面の35μmの箔側を接着面として予め一定形状に
打ち抜かれた熱伝導率が3×10-4cal/cm ・ sec .℃で
かつ厚みが20μmの接着シートを用いて前記のアルミ
ニウムベースの金属ベース回路基板の絶縁層上に張り合
わせた。この金属ベース多層回路基板の絶縁破壊電圧お
よび熱抵抗を測定した。その結果を表1に示すが絶縁破
壊電圧は6.2kV、熱抵抗は1.14℃/Wであっ
た。また、ノイズシールド性も良好であった。
[Embodiment 2] First, 510 × 510 × 1.
5mm epoxy resins Hamazai alumina coated on the aluminum plate t, on the cured by heating laminated copper foil of 35μm thickness thereof, the thermal conductivity of 3.5 × 10 -3 cal / cm. Se
c . After forming an insulating layer having a thickness of 60 μm at 0 ° C., a desired conductive circuit was formed by etching. Next, a glass epoxy substrate having a heat conductivity of 6 × 10 −4 cal / cm · sec . ° C. and a thickness of 30 μm, which has a conductive foil with a foil thickness of 70 μm on the upper surface and a foil thickness of 35 μm on the lower surface, has a desired circuit and After forming the through-holes, the heat conductivity was 3 × 10 -4 cal / cm · sec . ℃ and the thickness was punched into a certain shape in advance with the 35 μm foil side of the lower surface of the insulating glass epoxy substrate as the adhesive surface . A 20 μm adhesive sheet was used to bond the aluminum-based metal-based circuit board to the insulating layer. The breakdown voltage and thermal resistance of this metal-based multilayer circuit board were measured. The results are shown in Table 1. The dielectric breakdown voltage was 6.2 kV and the thermal resistance was 1.14 ° C / W. Moreover, the noise shielding property was also good.

【0017】〔実施例3〜5〕金属ベース回路基板の絶
縁層の厚さ及び熱伝導率、上層回路基板の厚さ及び熱伝
導率、接着シートの厚さ及び熱伝導率を表1のように変
えた以外は実施例1と同様にして金属ベース多層回路基
板を作製した。これらの金属ベース多層回路基板の絶縁
破壊電圧および熱抵抗を実施例1と同様にして測定し
た。その結果を表1に示すが絶縁破壊電圧は高く、熱抵
抗は小さかった。
[Examples 3 to 5] Table 1 shows the thickness and thermal conductivity of the insulating layer of the metal base circuit board, the thickness and thermal conductivity of the upper layer circuit board, and the thickness and thermal conductivity of the adhesive sheet. A metal-based multilayer circuit board was prepared in the same manner as in Example 1 except that The breakdown voltage and thermal resistance of these metal-based multilayer circuit boards were measured in the same manner as in Example 1. The results are shown in Table 1, but the dielectric breakdown voltage was high and the thermal resistance was small.

【0018】〔比較例1〕比較例として、510×51
0×1.5mm tのアルミニウム板上にアルミナを充填し
たエポキシ樹脂を塗布し、その上に35μm厚の銅箔を
張り合わせ加熱硬化させ、熱伝導率が1×10-2cal/cm
・ sec .℃で、厚さ50μmの絶縁層を形成した後、エ
ッチングにより所望の回路を形成した。次に、上面に箔
厚70μmおよび下面に箔厚35μmの導電箔を有し、
熱伝導率が1.2×10-3cal/cm ・sec .℃でかつ厚み
が25μmのガラスエポキシ基板に所望の回路及びスル
ーホールを形成後、絶縁基板であるガラスエポキシ基板
の下面の35μmの箔側を接着面として予め一定形状に
打ち抜かれた熱伝導率が1×10-3cal/cm ・ sec .℃で
かつ厚みが15μmのプリプレグを用いて前記のアルミ
ニウムベースの金属ベース回路基板の絶縁層上に張り合
わせた。この金属ベース多層回路基板の絶縁破壊電圧及
び熱抵抗を実施例1と同様の方法で測定した。その結果
を表1に示すが絶縁破壊電圧は4.5kV、熱抵抗は
1.25℃/Wであった。
Comparative Example 1 As a comparative example, 510 × 51
Alumina-filled epoxy resin is coated on a 0 × 1.5 mm t aluminum plate, and a 35 μm thick copper foil is laminated on it and heat-cured. The thermal conductivity is 1 × 10 -2 cal / cm.
After forming an insulating layer having a thickness of 50 μm at sec . ° C., a desired circuit was formed by etching. Next, a conductive foil having a foil thickness of 70 μm on the upper surface and a foil thickness of 35 μm on the lower surface,
After forming a desired circuit and a through hole on a glass epoxy substrate having a thermal conductivity of 1.2 × 10 −3 cal / cm · sec . Insulation of the aluminum-based metal base circuit board using a prepreg with a thermal conductivity of 1 × 10 -3 cal / cm · sec . Laminated on layers. The dielectric breakdown voltage and thermal resistance of this metal-based multilayer circuit board were measured in the same manner as in Example 1. The results are shown in Table 1. The dielectric breakdown voltage was 4.5 kV and the thermal resistance was 1.25 ° C / W.

【0019】〔比較例2、3〕金属ベース回路基板の絶
縁層の厚さ及び熱伝導率、上層回路基板の厚さ及び熱伝
導率、接着シートの厚さ及び熱伝導率を表1のように変
えた以外は比較例1と同様にして金属ベース多層回路基
板を作製した。これらの金属ベース多層回路基板の絶縁
破壊電圧および熱抵抗を実施例1と同様の方法で測定し
た。その結果を表1に示すが絶縁破壊電圧は高かった
が、熱抵抗が大きく好ましくなかった。
[Comparative Examples 2 and 3] Table 1 shows the thickness and thermal conductivity of the insulating layer of the metal base circuit board, the thickness and thermal conductivity of the upper circuit board, and the thickness and thermal conductivity of the adhesive sheet. A metal-based multilayer circuit board was prepared in the same manner as in Comparative Example 1 except that The breakdown voltage and thermal resistance of these metal-based multilayer circuit boards were measured by the same methods as in Example 1. The results are shown in Table 1. Although the dielectric breakdown voltage was high, the thermal resistance was large, which was not preferable.

【0020】[0020]

【発明の効果】本発明によれば、ノイズシールド性及び
耐電圧性にすぐれた熱放散性が良好な金属ベース多層回
路基板を得ることができる。
According to the present invention, it is possible to obtain a metal-based multi-layer circuit board which is excellent in noise shielding property, withstand voltage property and good in heat dissipation property.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明の金属ベース多層回路基板の構造の一
例を示す断面概略図である。
FIG. 1 is a schematic cross-sectional view showing an example of the structure of a metal-based multilayer circuit board of the present invention.

【符号の説明】[Explanation of symbols]

1;金属板 2;金属ベース回路基板の絶縁層 3;接着剤層 4;上層回路基板の絶縁基板 5;上層回路基板の上面回路 6;上層回路基板の下面回路 7;金属ベース回路基板の回路 8;金属ベース回路基板 DESCRIPTION OF SYMBOLS 1; Metal plate 2; Insulating layer of metal base circuit board 3; Adhesive layer 4; Insulating board of upper layer circuit board 5; Upper surface circuit of upper layer circuit board 6; Lower surface circuit of upper layer circuit board 7; Circuit of metal base circuit board 8; Metal base circuit board

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 金属板上の少なくとも一主面上に、絶縁
層を介して回路が形成された金属ベース回路基板の上
に、接着剤層を介して両面に回路を有する上層回路基板
が積層一体化された金属ベース多層回路基板において、 (1)前記上層回路基板の絶縁基板の熱伝導率が6×1
-4〜1.2×10-3cal/cm .sec . ℃ であり、かつ
その厚さが30〜70μmであること、 (2)前記接着剤層の熱伝導率が3×10-4〜1×10
-3cal/cm .sec . ℃であり、かつその厚さが20〜50
μmであること、 (3)前記金属ベース回路基板の絶縁層の熱伝導率が
3.5×10-3〜1.0×10-2cal/cm .sec . ℃であ
り、かつ厚さが60〜200μmであること、を特徴と
する金属ベース多層回路基板。
1. An upper layer circuit board having circuits on both sides thereof is laminated via an adhesive layer on a metal base circuit board having a circuit formed on at least one main surface of a metal plate via an insulating layer. In the integrated metal-based multilayer circuit board, (1) the thermal conductivity of the insulating substrate of the upper layer circuit board is 6 × 1.
0 -4 ~1.2 × 10 -3 cal / cm. Sec. Is ° C., and that the thickness of 30 to 70 .mu.m, (2) the thermal conductivity of the adhesive layer is 3 × 10 -4 ~ 1 x 10
-3 cal / cm. Sec. Is ° C., and its thickness is 20 to 50
it is [mu] m, (3) the metal base circuit thermal conductivity of the substrate of the insulating layer is 3.5 × 10 -3 ~1.0 × 10 -2 cal / cm. a sec. ° C., and a thickness A metal-based multilayer circuit board having a thickness of 60 to 200 μm.
JP9508094A 1994-05-09 1994-05-09 Metal-based multilayer circuit board Expired - Fee Related JP3436582B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9508094A JP3436582B2 (en) 1994-05-09 1994-05-09 Metal-based multilayer circuit board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9508094A JP3436582B2 (en) 1994-05-09 1994-05-09 Metal-based multilayer circuit board

Publications (2)

Publication Number Publication Date
JPH07302978A true JPH07302978A (en) 1995-11-14
JP3436582B2 JP3436582B2 (en) 2003-08-11

Family

ID=14127981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9508094A Expired - Fee Related JP3436582B2 (en) 1994-05-09 1994-05-09 Metal-based multilayer circuit board

Country Status (1)

Country Link
JP (1) JP3436582B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011118352A1 (en) * 2010-03-23 2011-09-29 東洋アルミニウム株式会社 Mounting board heat dissipating laminate

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63246897A (en) * 1987-04-02 1988-10-13 日立化成工業株式会社 Manufacture of metal base double-layer interconnection board
JPH04119696A (en) * 1990-09-11 1992-04-21 Denki Kagaku Kogyo Kk Metal-base multilayered circuit board
JPH065999A (en) * 1992-06-23 1994-01-14 Matsushita Electric Works Ltd Metal-base printed wiring board having multilayer on one side
JPH06342986A (en) * 1993-06-02 1994-12-13 Mitsubishi Cable Ind Ltd Multilayer circuit board structure and multilayer metal base board using the multilayer circuit board

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63246897A (en) * 1987-04-02 1988-10-13 日立化成工業株式会社 Manufacture of metal base double-layer interconnection board
JPH04119696A (en) * 1990-09-11 1992-04-21 Denki Kagaku Kogyo Kk Metal-base multilayered circuit board
JPH065999A (en) * 1992-06-23 1994-01-14 Matsushita Electric Works Ltd Metal-base printed wiring board having multilayer on one side
JPH06342986A (en) * 1993-06-02 1994-12-13 Mitsubishi Cable Ind Ltd Multilayer circuit board structure and multilayer metal base board using the multilayer circuit board

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011118352A1 (en) * 2010-03-23 2011-09-29 東洋アルミニウム株式会社 Mounting board heat dissipating laminate
CN102870512A (en) * 2010-03-23 2013-01-09 东洋铝株式会社 Mounting board heat dissipating laminate

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