JPH072975U - Probe card suitable for heating or cooling test - Google Patents

Abstract

(57) [Abstract] [Purpose] A wafer on which multiple integrated circuit chips are formed,
That is, by performing a heating or cooling test on the integrated circuit chip before dicing, the defective integrated circuit chip can be removed before the packaging process. [Structure] A probe substrate 20 formed by using the same material as a wafer on which an integrated circuit chip as an inspection object is formed.
0 is a probe card suitable for a heating or cooling test, wherein the probe board 200 is provided with through holes 210 at positions corresponding to pads of one or more integrated circuit chips to be measured. The contact portion of the probe that comes into contact with is inserted into the through hole 210.

Description

[Detailed description of the device]

[0001]

[Industrial applications]

 The present invention relates to a probe card, particularly a probe card suitable for heating or cooling test.

[0002]

[Prior art]

 One of the tests for semiconductor devices is to perform them in a heating or cooling atmosphere. Such a test is performed on a semiconductor device as a product whose packaging process has been completed. It would be good if it could be tested in the state of a wafer on which multiple integrated circuit chips were formed. However, since the probe board of the conventional probe card is mainly made of glass epoxy resin, which is weak against heat, the heating or cooling atmosphere Not suitable for the test below.

[0003]

[Problems to be solved by the device]

 However, this test has the following problems. In other words, if a defective product is discovered after it is completed as a product, the time, materials, etc. required up to that point will be wasted. In particular, it takes several minutes to test a 16-megabyte memory and several hours to test a 64-megabyte memory, so an apparatus that can simultaneously test multiple semiconductor devices has been proposed and implemented. However, there is no difference in finding defective products from semiconductor devices completed as products.

The present invention has been made in view of the above circumstances, and a wafer on which a plurality of integrated circuit chips are formed, that is, an integrated circuit chip before dicing is subjected to a heating or a cooling test, so that a package is formed. It is an object of the present invention to provide a probe card suitable for a heating or cooling test that can remove defective integrated circuit chips before the process.

[0005]

[Means for Solving the Problems]

 A probe card suitable for a heating or cooling test according to the present invention includes a probe base plate formed of the same material as a wafer on which an integrated circuit chip as an inspection target is formed.

[0006]

【Example】

 FIG. 1 is a schematic plan view of a probe board used in a probe card suitable for a heating or cooling test according to the first embodiment of the present invention, and FIG. 2 is a main part of a probe card suitable for this heating or cooling test. Fig. 3 is a schematic cross-sectional view showing the deflection of the probe during measurement work with a probe card suitable for this heating or cooling test, and Fig. 4 is a probe card suitable for this heating or cooling test. FIG. 5 is a side view showing a probe having another shape, and FIG. 6 is a schematic sectional view of a main part of a probe card suitable for a heating or cooling test according to a second embodiment of the present invention. FIG. 7 is an explanatory diagram of the measurement work by the probe card suitable for this heating or cooling test. It should be noted that the dimensional relationship between each part in each drawing is changed for convenience of drawing.

The probe card 100 suitable for the heating or cooling test according to the first embodiment includes a probe substrate 200 formed by using the same material as the wafer 900 on which an integrated circuit chip as an inspection object is formed. Have Generally, since the wafer is made of silicon, the probe substrate 200 of the probe card 100 according to this embodiment is also made of silicon, but the present invention is not limited to this.

A total of 20 through holes 210 corresponding to the pads 910 formed on the integrated circuit chip are formed on the probe board 200, and a wiring pattern 220 related to the through holes 210 is formed on the surface. Has been done. The wiring pattern 220 is to be electrically connected to the connection portion 310 of the probe 300 described later, and is formed from the periphery of the through hole 210 to the edge portion of the probe substrate 200. The wiring pattern 220 is not shown in FIG. 1 but shown in FIGS. 2 and 3.

The probe 300 is made of W, Pd, BeCu, or the like, and a tip of about 100 to 200 μm is bent as a contact portion 310 at a substantially right angle. The diameter of the probe 300 is set to be smaller than that of the through hole 210.

In such a probe 300, as shown in FIG. 2, a contact portion 310 is inserted into the through hole 210 from the front surface side of the probe substrate 200, and the wiring pattern 220 is soldered to the connection portion 320 which is the rear end thereof. Etc. are connected. Therefore, the probe 300 is structurally connected to the probe substrate 200 at the connection portion 320.

The probe card 100 configured as described above is attached to the mother board 160 via the intermediate substrate 150 as shown in FIG. A wiring pattern (not shown) corresponding to the wiring pattern 220 is formed on the intermediate substrate 150. The mother board 160 is provided with through holes (not shown) corresponding to the wiring patterns of the intermediate substrate 150 and wiring patterns (not shown) connected to the through holes. It is connected to the measuring equipment (not shown) via.

The probe card 100 configured as described above is used as follows. A wafer 900 on which a plurality of integrated circuit chips are formed is placed at a predetermined position on a placing table 950 containing a heat source such as a heater (not shown) (see FIG. 4) and heated to about 180 ° C. Due to this heating, the ambient atmosphere is also in a high temperature state. In that state, the probe card 100 is pushed down from above to bring the contact portion 310 of the probe 300 into contact with the pad 910. Even after the contact portion 310 comes into contact with the pad 910, overdrive is applied to give a predetermined contact pressure between them. Note that the probe 300 bends upward as shown in FIG. 3 when the overdrive is applied.

Although the measurement is performed with overdrive applied, the wafer 900 is expanded because it is heated. However, since the probe substrate 200 is made of the same material as the wafer 900, that is, silicon, the expansion coefficients thereof are the same, and the relative positional relationship between the probe 300 and the pad 910 does not shift.

However, since the probe 300 is not formed of silicon, the coefficient of expansion differs from that of the probe substrate 200, the wafer 900, etc., but it is much smaller than that of the probe substrate 200, etc. The effect on measurement is small. As shown in FIG. 5, if a substantially U-shaped buffer portion 330 is provided in the middle portion of the probe 300, the influence of the expansion of the probe 300 can be almost ignored.

In addition, in the above-described embodiment, the measurement in the state where the wafer 900 is heated has been described, but the measurement in the state where the wafer 900 is cooled is performed in the same manner. Therefore, even in the measurement in the cooled state, the expansion coefficient of the wafer 900 is the same, and the relative positional relationship between the probe 300 and the pad 910 does not shift.

Next, a probe card suitable for the heating or cooling test according to the second embodiment will be described with reference to FIG. The probe card 500 according to the second embodiment is different from the above-described probe card 100 in the probe 700. That is, the probe card 500 includes the probe 700 having a substantially pin shape. The probe 700 is formed by integrally forming a contact portion 710 having a diameter slightly smaller than the through hole 610 of the probe substrate 600 and a connection portion 720 having a diameter larger than the through hole 610.

The contact portion 710 is set so as to protrude from the through hole 610 by about 100 to 200 μm. This is because there is a height error in the pad 910 of the integrated circuit chip, and there is a possibility that there is a pad 910 that cannot be contacted even if an overdrive is applied with a protrusion amount of about 30 μm.

On the other hand, the probe substrate 600 is made of the same material as the wafer 900, that is, silicon, and the through holes 610 are formed at positions corresponding to the pads 910 of the integrated circuit chip. Further, a wiring pattern 620 is formed on the surface of the probe substrate 600. Moreover, the wiring pattern 620 is formed in the shape of a land around the through hole 610 and is also formed up to the edge of the probe substrate 600. The contact portion 710 of the probe 700 is inserted into the through hole 610 of the probe substrate 600 thus formed, and the back surface of the connection portion 720 is connected to the wiring pattern 620.

This probe substrate 600 is greatly different from the probe card 100 according to the first embodiment in the thickness dimension thereof. That is, the thickness dimension of the probe card 100 of the first embodiment is set smaller than that of the probe substrate 200. This is because the probe card 100 according to the first embodiment bends itself in order to secure a predetermined contact pressure when overdrive is applied, but the probe card 500 according to the second embodiment does. This is because the probe board 700 cannot be bent, so that the probe board 600 is bent.

In this probe card 500, a flexible material 800 having an insulating property such as silicon rubber is laminated on a probe substrate 600. Further, a holding member 810 is attached on the flexible material 800. Other points, that is, attachment to the mother board 160 via the intermediate substrate 150, are the same as those of the probe card 100 according to the first embodiment.

In the above-mentioned two embodiments, only one integrated circuit chip can be measured. However, the present invention is not limited to this, and two or more integrated circuit chips can be measured at the same time. Of course, it is possible to do so.

[0022]

[Effect of device]

 The probe card suitable for the heating or cooling test according to the present invention has the probe base plate formed by using the same material as the wafer on which the integrated circuit chip as the inspection object is formed. Since the expansion coefficient in the test is equal to that of the wafer, the relative positional relationship between the probe and the pad due to the expansion of the probe substrate does not shift. Therefore, since the heating or cooling test, which was conventionally performed on the completed semiconductor device as a product, can be performed on the wafer, it becomes possible to remove the defective integrated circuit chip before the packaging process. As a result, it is possible to save the manufacturing time and the waste of materials, and eventually contribute to the cost reduction of the semiconductor device.

[Brief description of drawings]

FIG. 1 is a schematic plan view of a probe substrate used in a probe card suitable for a heating or cooling test according to a first embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view showing a main part of a probe card suitable for this heating or cooling test.

FIG. 3 is a schematic cross-sectional view showing bending of a probe during a measurement operation with a probe card suitable for this heating or cooling test.

FIG. 4 is an explanatory diagram of a measurement operation using a probe card suitable for this heating or cooling test.

FIG. 5 is a side view showing a probe having another shape.

FIG. 6 is a schematic cross-sectional view of a main part of a probe card suitable for a heating or cooling test according to a second embodiment of the present invention.

FIG. 7 is an explanatory diagram of measurement work by a probe card suitable for this heating or cooling test.

[Explanation of symbols]

100 (according to the first embodiment) Probe card suitable for heating or cooling test 200 Probe substrate 210 Through hole 300 Probe 310 Contact part 500 (according to second embodiment) Probe card 600 suitable for heating or cooling test Probe board 700 Probe 900 Wafer 910 Pad

Claims (4)

[Scope of utility model registration request] 1. A probe card suitable for a heating or cooling test, comprising a probe substrate formed of the same material as a wafer on which an integrated circuit chip as an inspection object is formed. 2. A probe card suitable for a heating or cooling test, which has a probe substrate formed of the same material as a wafer on which an integrated circuit chip as an inspection object is formed, and the probe substrate is to be measured. A heating or cooling test characterized in that a through hole is provided at a position corresponding to a pad of one or more integrated circuit chips, and a contact portion of a probe that contacts the pad is inserted into the through hole. Suitable probe card. 3. A probe card suitable for a heating or cooling test, which has a probe substrate formed of the same material as a wafer on which an integrated circuit chip as an inspection object is formed, and which corresponds to a pad of the integrated circuit chip. A probe card suitable for a heating or cooling test, wherein a through-hole is provided at a position, and a substantially pin-shaped probe is inserted into the through-hole. 4. The probe substrate used in the probe card suitable for the heating or cooling test according to claim 3, is thick enough to bend when an overdrive is applied to provide a predetermined contact pressure between the probe and the pad. A probe card suitable for a heating or cooling test, which is characterized in that it is dimensioned.