JPH07297464A - Differential magnetoresistive effect element - Google Patents
Differential magnetoresistive effect elementInfo
- Publication number
- JPH07297464A JPH07297464A JP6091943A JP9194394A JPH07297464A JP H07297464 A JPH07297464 A JP H07297464A JP 6091943 A JP6091943 A JP 6091943A JP 9194394 A JP9194394 A JP 9194394A JP H07297464 A JPH07297464 A JP H07297464A
- Authority
- JP
- Japan
- Prior art keywords
- film
- magnetoresistive effect
- magnetic field
- films
- magnetoresistive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000694 effects Effects 0.000 title claims abstract description 66
- 230000006698 induction Effects 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 7
- 230000035699 permeability Effects 0.000 abstract description 4
- 239000000696 magnetic material Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 84
- 238000000605 extraction Methods 0.000 description 11
- 230000008859 change Effects 0.000 description 8
- 239000010410 layer Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000001939 inductive effect Effects 0.000 description 5
- 230000005415 magnetization Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910020630 Co Ni Inorganic materials 0.000 description 1
- 229910002440 Co–Ni Inorganic materials 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】バイアス磁界を印加する差動型磁
気抵抗効果素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a differential magnetoresistive effect element for applying a bias magnetic field.
【０００２】[0002]
【従来の技術】従来から磁気抵抗効果素子は低磁場を高
感度で検出する手段として広く用いられている。この磁
気抵抗効果素子は、出力電圧を増幅するとともにその出
力電圧の温度依存性を改善するために信号磁界に対して
互いに逆相の抵抗変化をさせ差動増幅した出力が得られ
る二素子三端子型構造を採用する事が公知である。そし
てこのような磁気抵抗効果素子は永久磁石によりバイア
ス磁界が印加されることがある。2. Description of the Related Art Conventionally, a magnetoresistive effect element has been widely used as a means for detecting a low magnetic field with high sensitivity. This magnetoresistive effect element is a two-element three-terminal device that obtains differentially amplified output by amplifying the output voltage and improving the temperature dependence of the output voltage by making resistance changes in opposite phases to the signal magnetic field. It is known to employ a mold structure. A bias magnetic field may be applied to such a magnetoresistive element by a permanent magnet.
【０００３】例えば特開昭６１−９２４１４号公報に記
載の磁気抵抗効果素子は図７に示すように磁気抵抗効果
膜１ａ、１ｂに隣接し互いにその着磁方向が逆方向であ
るバイアス磁界を印加するための磁石１１、１１、磁気
抵抗効果膜の抵抗変化を取り出すための接続電極３、３
と引出電極４とが絶縁基板５の上に形成された、磁気抵
抗効果素子パタ−ン６からなる。For example, as shown in FIG. 7, the magnetoresistive effect element disclosed in Japanese Patent Laid-Open No. 61-92414 applies a bias magnetic field which is adjacent to the magnetoresistive effect films 1a and 1b and whose magnetization directions are opposite to each other. Magnets 11 and 11 for connection, connection electrodes 3 and 3 for extracting resistance change of the magnetoresistive film
And the extraction electrode 4 are formed of a magnetoresistive effect element pattern 6 formed on the insulating substrate 5.
【０００４】上記のように構成される磁気抵抗効果素子
にあっては、第一の磁気抵抗効果膜１ａおよび第二の磁
気抵抗効果膜１ｂに対して、それぞれ逆の状態の磁界が
印加されるため、この様な第一および第二の磁気抵抗効
果膜に対して、共通の信号磁界が作用すると、その各磁
気抵抗効果膜において、逆の位相状態で抵抗値が変化す
る。したがって上記第一および第二の磁気抵抗効果膜の
接続点にあっては、上記磁気抵抗効果膜それぞれの抵抗
変化が加算された状態で検出されるようになり、十分に
大きな出力信号が検出される。同時に、温度変化が存在
するような場合であっても、この温度変化に伴う出力変
動は相殺されるので、温度変化に対して安定した信号検
出特性が設定される。In the magnetoresistive effect element configured as described above, magnetic fields in opposite states are applied to the first magnetoresistive effect film 1a and the second magnetoresistive effect film 1b. Therefore, when a common signal magnetic field acts on such first and second magnetoresistive films, the resistance value changes in the opposite phase state in each of the magnetoresistive films. Therefore, at the connection point of the first and second magnetoresistive effect films, the resistance changes of the magnetoresistive effect films are detected in a summed state, and a sufficiently large output signal is detected. It At the same time, even if there is a temperature change, output fluctuations due to this temperature change are canceled out, so that a stable signal detection characteristic with respect to temperature change is set.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら従来の構
造の磁気抵抗効果素子では各々の磁気抵抗効果膜に対し
てそれぞれ独立した磁石でバイアス磁界を印加している
ため、磁石の形状や着磁方向にばらつきが生じると、そ
のバイアス点が変動する。このバイアス点の変動が磁気
抵抗効果素子間の特性ばらつきの原因となっていた。However, in the magnetoresistive effect element having the conventional structure, since the bias magnetic field is applied to each magnetoresistive effect film by an independent magnet, the magnet shape and the magnetizing direction are different. When the variation occurs, the bias point changes. This fluctuation of the bias point has been a cause of characteristic variations among the magnetoresistive effect elements.
【０００６】[0006]
【課題を解決するための手段】本発明の請求項１にかか
る差動型磁気抵抗効果素子は、絶縁基板に構成された一
対の磁気抵抗効果膜と、前記一対の磁気抵抗効果膜にバ
イアス磁界を印加するためのハ−ド膜と、前記一対の磁
気抵抗効果膜およびハ−ド膜に磁気的連続性を持って配
置されたバイアス磁界誘導膜と、前記一対の磁気抵抗効
果膜の一端同士を接続する引出部と、前記一対の磁気抵
抗効果膜の他端に接続する接続電極とをそなえたことを
特徴とする。A differential magnetoresistive effect element according to claim 1 of the present invention comprises a pair of magnetoresistive effect films formed on an insulating substrate, and a bias magnetic field applied to the pair of magnetoresistive effect films. For applying a magnetic field, a pair of magnetoresistive films and a bias magnetic field guiding film disposed with magnetic continuity on the hard films, and one end of the pair of magnetoresistive films. And a connection electrode connected to the other ends of the pair of magnetoresistive effect films.
【０００７】[0007]
【作用】単一のハ−ド膜から漏洩する磁界を、ハ−ド膜
に磁気的に結合している高透磁率磁性膜を用いて、一対
の磁気抵抗効果膜に互いに方向が逆のバイアス磁界を印
加するような構造とした。The magnetic field leaking from a single hard film is biased to a pair of magnetoresistive films by using a high permeability magnetic film magnetically coupled to the hard film. The structure was such that a magnetic field was applied.
【０００８】[0008]
（実施例１）本発明にかかる一実施例差動型磁気抵抗効
果素子１０の構造を図１、２、３を用いて説明する。な
お従来例と同じ部分については同一の符号を付ける。図
１は差動型磁気抵抗効果素子の外観斜視図、図２は差動
型磁気抵抗効果素子を構成する磁気抵抗効果素子パタ−
ン９の平面図で磁気抵抗効果膜１ａ、１ｂ、ハ−ド膜
２、接続電極３、３、引出電極４、バイアス磁界誘導膜
６ａ、６ｂ、６ｃ、引出部７とが絶縁基板５に形成され
た構造となっている。磁気抵抗効果膜１ａ、１ｂは引出
部７の一端を介して接続されており、引出部７の他端は
ハ−ド膜２に接続されている。ハ−ド膜２の反対側には
引出電極４が接続されている。図３に示すようにハ−ド
膜２は矢印方向に着磁されている。ハ−ド膜２から漏洩
する磁力線はバイアス磁界誘導膜６ａにより磁気抵抗効
果膜１ａに効率良く誘導される。バイアス磁界誘導膜６
ｂはその中央部分に狭幅部が設けられた構造を有してお
り、磁気抵抗効果膜１ａ、１ｂを挟んでハ−ド膜２と反
対側に位置している。前記バイアス磁界誘導膜６ｂはバ
イアス磁界の方向を変え、磁気抵抗効果膜１ｂに逆方向
にバイアス磁界を印加するように働く。さらに磁気抵抗
効果膜１ｂに印加されたバイアス磁界は磁気誘導膜６ｃ
を介してハ−ド膜２にもどる。以上のような磁気回路が
形成されているため、一対の磁気抵抗効果膜１ａ、１ｂ
には互いに方向が逆で大きさが等しいバイアス磁界がそ
の伸張方向に対して垂直に印加されている。(Embodiment 1) The structure of a differential magnetoresistive effect element 10 according to an embodiment of the present invention will be described with reference to FIGS. The same parts as those in the conventional example are designated by the same reference numerals. FIG. 1 is an external perspective view of the differential magnetoresistive effect element, and FIG. 2 is a magnetoresistive effect element pattern forming the differential magnetoresistive effect element.
The magnetoresistive film 1a, 1b, the hard film 2, the connection electrodes 3, 3, the extraction electrode 4, the bias magnetic field induction films 6a, 6b, 6c, and the extraction portion 7 are formed on the insulating substrate 5 in the plan view of FIG. It has a structured structure. The magnetoresistive films 1 a and 1 b are connected to each other through one end of the lead-out portion 7, and the other end of the lead-out portion 7 is connected to the hard film 2. The extraction electrode 4 is connected to the opposite side of the hard film 2. As shown in FIG. 3, the hard film 2 is magnetized in the arrow direction. The magnetic field lines leaking from the hard film 2 are efficiently guided to the magnetoresistive film 1a by the bias magnetic field guiding film 6a. Bias magnetic field induction film 6
b has a structure in which a narrow portion is provided in the central portion thereof, and is located on the opposite side of the hard film 2 with the magnetoresistive effect films 1a and 1b sandwiched therebetween. The bias magnetic field inducing film 6b functions to change the direction of the bias magnetic field and apply the bias magnetic field to the magnetoresistive effect film 1b in the opposite direction. Further, the bias magnetic field applied to the magnetoresistive effect film 1b is applied to the magnetic induction film 6c.
Return to the hard film 2 via. Since the magnetic circuit as described above is formed, the pair of magnetoresistive effect films 1a and 1b are formed.
A bias magnetic field whose directions are opposite to each other and whose magnitudes are equal to each other is applied perpendicularly to the extension direction.
【０００９】本発明の差動型磁気抵抗効果素子１０はつ
ぎのような製法により作られる。The differential magnetoresistive effect element 10 of the present invention is manufactured by the following manufacturing method.
【００１０】まずガラスなどの絶縁基板５に真空蒸着法
により膜厚３０nmのＮｉ−Ｆｅ合金薄膜が成膜され、フ
ォトリソグラフィ−により磁気抵抗効果膜１ａ、１ｂと
バイアス磁界誘導膜６ａ、６ｂ、６ｃとにパタ−ン形成
される。続いて、磁気抵抗効果膜１ａ、１ｂとバイアス
磁界誘導膜６ａ、６ｂ、６ｃの上にリフトオフ法により
接着層として働くＴｉ層が形成され、続いてハ−ド材料
であるＣｏ−Ｎｉ層が形成される事により二層構造をも
つハ−ド膜２が形成される。さらにＡｕとＴｉからなる
二層構造を持つ接続電極３、３、引出電極４および引出
部７がリフトオフ法により形成される。次に前記磁気抵
抗効果素子パタ−ン９を保護するためにＳｉ−Ｎからな
る保護膜８が接続電極３、３と引出電極４の一部を残し
てほぼ全面に形成される。そしてハ−ド膜２が磁気抵抗
効果膜１ａ、１ｂの伸張方向に磁化される。この磁化に
より磁気抵抗効果膜１ａ、１ｂに垂直で互いにその方向
が逆のバイアス磁界が印加される。First, a Ni-Fe alloy thin film having a film thickness of 30 nm is formed on an insulating substrate 5 such as glass by a vacuum evaporation method, and the magnetoresistive effect films 1a and 1b and bias magnetic field induction films 6a, 6b and 6c are formed by photolithography. The pattern is formed in and. Subsequently, a Ti layer serving as an adhesive layer is formed by a lift-off method on the magnetoresistive effect films 1a and 1b and the bias magnetic field induction films 6a, 6b and 6c, and subsequently a Co-Ni layer which is a hard material is formed. By doing so, the hard film 2 having a two-layer structure is formed. Further, the connection electrodes 3 and 3, the lead-out electrode 4 and the lead-out portion 7 having a two-layer structure made of Au and Ti are formed by the lift-off method. Next, a protective film 8 made of Si--N for protecting the magnetoresistive effect element pattern 9 is formed on almost the entire surface except a part of the connection electrodes 3 and 3 and the extraction electrode 4. Then, the hard film 2 is magnetized in the extending direction of the magnetoresistive effect films 1a and 1b. Due to this magnetization, a bias magnetic field perpendicular to the magnetoresistive films 1a and 1b and opposite to each other is applied.
【００１１】前記差動型磁気抵抗効果素子１０の動作特
性を図４、５を用いて説明する。図４は差動型磁気抵抗
効果素子１０の特性変化を示す図で、磁気抵抗効果膜１
ａ、１ｂは互いに逆方向のバイアス磁界により動作点を
ずらせているので、左右対称の形状を示す。そしてこの
ような差動型磁気抵抗効果素子１０は図５に示すように
入力電圧に対して大きな出力電圧を示す。The operation characteristics of the differential magnetoresistive effect element 10 will be described with reference to FIGS. FIG. 4 is a diagram showing changes in the characteristics of the differential magnetoresistive effect element 10.
Since a and 1b have their operating points shifted by the bias magnetic fields in the opposite directions, they show symmetrical shapes. The differential magnetoresistive effect element 10 as described above exhibits a large output voltage with respect to the input voltage as shown in FIG.
【００１２】（実施例２）次に本発明にかかる別の実施
例差動型磁気抵抗効果素子１０の構造を図６に基づいて
説明する。図６は差動型磁気抵抗効果素子１０を構成す
る磁気抵抗効果素子パタ−ン９の平面図で磁気抵抗効果
膜１ａ、１ｂ、ハ−ド膜２、接続電極３、３、引出電極
４、バイアス磁界誘導膜６ａ、６ｂ、６ｃとが絶縁基板
５に形成された構造となっている。磁気抵抗効果膜１
ａ、１ｂは後述する引出電極４により互いに接続されて
おり、両端には抵抗値の変化を取り出すための接続電極
３、３が接続されている。バイアス磁界誘導膜６ａ、６
ｂ、６ｃは高透磁率を有する磁性材料で形成されてお
り、ハ−ド膜２から漏洩した磁束を効率良く磁気抵抗効
果膜１ａ、１ｂに印加するように磁気的結合状態を保っ
て磁気抵抗効果膜１ａ、１ｂに配置されている。バイア
ス磁界誘導膜６ｂはその中央部に狭幅部を有している。
磁気抵抗効果膜１ａ、１ｂは相互にそれぞれの端部が、
引出電極４を介して接続されている。引出電極４はたと
えばＡｕとＴｉからなる二層構造を有する非磁性体から
なり、バイアス磁界誘導膜６ｂとは絶縁層（図示せず）
により電気的に絶縁されている。前記磁気抵抗効果膜１
ａ、１ｂの他端部には、たとえばＡｕとＴｉで構成され
る二層構造を持つ接続電極３、３がリフトオフ法により
形成される。さらに前記磁気抵抗効果素子パタ−ン９を
保護するためにＳｉ−Ｎでできた保護膜８が形成され
る。つぎにハ−ド膜２が磁気抵抗効果膜１ａ、１ｂの伸
張方向に磁化され、差動型磁気抵抗効果素子が形成され
る。 実施例１の場合と同様にハ−ド膜２から漏洩した
磁界はバイアス磁界誘導膜６ａにより磁気抵抗効果膜１
ａに印加される。そしてバイアス磁界誘導膜６ｂにより
バイアス磁界の方向が変えられ、磁気抵抗効果膜１ｂに
バイアス磁界が印加される。さらにバイアス磁界誘導膜
６ｃによりハ−ド膜２に戻るように働く。以上のような
磁気回路が形成されているため一対の磁気抵抗効果膜１
ａ、１ｂには互いに方向が逆で大きさが等しいバイアス
磁界がその伸張方向に対して垂直に印加されている。(Embodiment 2) Next, the structure of a differential magnetoresistive effect element 10 according to another embodiment of the present invention will be described with reference to FIG. FIG. 6 is a plan view of a magnetoresistive effect element pattern 9 which constitutes the differential magnetoresistive effect element 10. The magnetoresistive effect films 1a and 1b, the hard film 2, the connection electrodes 3 and 3, the extraction electrode 4, The bias magnetic field induction films 6a, 6b and 6c are formed on the insulating substrate 5. Magnetoresistive film 1
The electrodes a and 1b are connected to each other by an extraction electrode 4 which will be described later, and the connection electrodes 3 and 3 for extracting a change in resistance value are connected to both ends. Bias magnetic field induction films 6a, 6
b and 6c are made of a magnetic material having a high magnetic permeability, and the magnetic resistance is maintained by maintaining the magnetic coupling state so that the magnetic flux leaked from the hard film 2 is efficiently applied to the magnetoresistive effect films 1a and 1b. It is arranged on the effect films 1a and 1b. The bias magnetic field inducing film 6b has a narrow portion in its central portion.
The magnetoresistive films 1a and 1b have their end portions mutually
It is connected via the extraction electrode 4. The extraction electrode 4 is made of, for example, a non-magnetic material having a two-layer structure made of Au and Ti, and is insulated from the bias magnetic field induction film 6b by an insulating layer (not shown).
It is electrically insulated by. The magnetoresistive film 1
At the other ends of a and 1b, connection electrodes 3 and 3 having a two-layer structure composed of Au and Ti, for example, are formed by a lift-off method. Further, a protective film 8 made of Si-N is formed to protect the magnetoresistive element pattern 9. Next, the hard film 2 is magnetized in the extending direction of the magnetoresistive effect films 1a and 1b to form a differential type magnetoresistive effect element. As in the case of the first embodiment, the magnetic field leaked from the hard film 2 is applied to the magnetoresistive film 1 by the bias magnetic field induction film 6a.
applied to a. The bias magnetic field inducing film 6b changes the direction of the bias magnetic field, and the bias magnetic field is applied to the magnetoresistive effect film 1b. Further, the bias magnetic field inducing film 6c works so as to return to the hard film 2. Since the magnetic circuit as described above is formed, the pair of magnetoresistive films 1
Bias magnetic fields whose directions are opposite to each other and have the same magnitude are applied to a and 1b perpendicularly to the extending direction.
【００１３】本実施例においても実施例１の場合と同様
に、出力が大きくしかも外部の温度などの変化に影響を
受けにくい特性を持つ差動型磁気抵抗効果素子１０が得
られる。Also in this embodiment, as in the case of the first embodiment, the differential type magnetoresistive effect element 10 having a large output and being hardly influenced by a change in external temperature can be obtained.
【００１４】[0014]
【発明の効果】本発明の差動型磁気抵抗効果素子は、引
出部の一端を介して接続される一対の磁気抵抗効果膜
に、閉磁路を形成するように構成されたハ−ド膜とバイ
アス磁界誘導膜により、互いにその値が等しく方向が逆
のバイアス磁界が印加されることを特徴とする。したが
って外部磁界の変化に対して磁気抵抗効果膜がそれぞれ
逆相の抵抗変化を示すため接続電極間に現れる電圧変化
は二倍になりその感度が向上する。それと同時に同一材
質、同一構造の二素子から形成された構造であるため、
温度などの外部環境の変化に対してその磁気抵抗特性が
互いに変動を相殺するように働く。さらに一対の磁気抵
抗効果膜に単一のハ−ド膜から漏洩するバイアス磁界を
印加するようにしたのでハ−ド膜の着磁方向のバラツキ
による磁気抵抗効果素子の特性バラツキがなくせる。The differential magnetoresistive effect element of the present invention comprises a pair of magnetoresistive effect films connected through one end of a lead-out portion, and a hard film configured to form a closed magnetic path. The bias magnetic field inducing film applies a bias magnetic field having the same value and opposite direction to each other. Therefore, since the magnetoresistive films exhibit resistance changes in opposite phases with respect to changes in the external magnetic field, the voltage change appearing between the connection electrodes is doubled and the sensitivity is improved. At the same time, because it is a structure formed from two elements of the same material and the same structure,
With respect to changes in the external environment such as temperature, the magnetoresistive characteristics work so as to cancel the variations. Further, since the bias magnetic field leaking from the single hard film is applied to the pair of magnetoresistive films, the characteristic variation of the magnetoresistive element due to the variation in the magnetization direction of the hard films can be eliminated.
【図１】本発明にかかる一実施例差動型磁気抵抗効果素
子の外観斜視図である。FIG. 1 is an external perspective view of a differential magnetoresistive effect element according to an embodiment of the present invention.
【図２】本発明にかかる一実施例差動型磁気抵抗効果素
子を構成する磁気抵抗効果素子パタ−ンの平面図であ
る。FIG. 2 is a plan view of a magnetoresistive effect element pattern forming a differential magnetoresistive effect element according to an embodiment of the present invention.
【図３】本発明にかかる一実施例差動型磁気抵抗効果素
子の磁気抵抗効果膜に印加されるバイアス磁界を示す図
である。FIG. 3 is a diagram showing a bias magnetic field applied to a magnetoresistive effect film of a differential magnetoresistive effect element according to an example of the present invention.
【図４】本発明にかかる一実施例差動型磁気抵抗効果素
子の特性を示す図である。FIG. 4 is a diagram showing characteristics of a differential magnetoresistive effect element according to an example of the present invention.
【図５】本発明にかかる一実施例差動型磁気抵抗効果素
子の出力電圧を示す図である。FIG. 5 is a diagram showing an output voltage of a differential magnetoresistive effect element according to an example of the present invention.
【図６】本発明にかかる別の実施例差動型磁気抵抗効果
素子を構成するパタ−ンの平面図である。FIG. 6 is a plan view of a pattern which constitutes a differential magnetoresistive effect element according to another embodiment of the present invention.
【図７】従来の差動型磁気抵抗効果素子のパタ−ンを示
す図である。FIG. 7 is a diagram showing a pattern of a conventional differential type magnetoresistive effect element.
１ａ、１ｂ 磁気抵抗効果膜 ２ ハ−ド膜 ３ 接続電極 ４ 引出電極 ５ 絶縁基板 ６ａ、６ｂ、６ｃ バイアス磁界誘導膜 ７ 引出部 ８ 保護膜 ９ 磁気抵抗効果素子パタ−ン １０ 磁気抵抗効果素子 １１ 磁石 1a, 1b Magnetoresistance effect film 2 Hard film 3 Connection electrode 4 Extraction electrode 5 Insulating substrate 6a, 6b, 6c Bias magnetic field induction film 7 Extraction part 8 Protective film 9 Magnetoresistive effect element pattern 10 Magnetoresistive effect element 11 magnet
Claims (1)
膜と、前記一対の磁気抵抗効果膜にバイアス磁界を印加
するためのハ−ド膜と、前記一対の磁気抵抗効果膜およ
びハ−ド膜に磁気的連続性を持って配置されたバイアス
磁界誘導膜と、前記一対の磁気抵抗効果膜の一端同士を
接続する引出部と、前記一対の磁気抵抗効果膜の他端に
接続する接続電極とをそなえたことを特徴とする差動型
磁気抵抗効果素子。1. A pair of magnetoresistive films formed on an insulating substrate, a hard film for applying a bias magnetic field to the pair of magnetoresistive films, the pair of magnetoresistive films and a hard film. Bias magnetic field induction film disposed with magnetic continuity on the magnetic film, a lead-out portion connecting one end of the pair of magnetoresistive effect films, and a connection connecting the other end of the pair of magnetoresistive effect films. A differential type magnetoresistive effect element having an electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6091943A JPH07297464A (en) | 1994-04-28 | 1994-04-28 | Differential magnetoresistive effect element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6091943A JPH07297464A (en) | 1994-04-28 | 1994-04-28 | Differential magnetoresistive effect element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07297464A true JPH07297464A (en) | 1995-11-10 |
Family
ID=14040681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6091943A Pending JPH07297464A (en) | 1994-04-28 | 1994-04-28 | Differential magnetoresistive effect element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07297464A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7157905B1 (en) | 2004-02-27 | 2007-01-02 | Murata Manufacturing Co., Ltd. | Long magnetic sensor |
| WO2011074488A1 (en) * | 2009-12-15 | 2011-06-23 | アルプス電気株式会社 | Magnetic sensor |
| JP2012122792A (en) * | 2010-12-07 | 2012-06-28 | Alps Electric Co Ltd | Magnetic sensor |
| WO2012172946A1 (en) * | 2011-06-13 | 2012-12-20 | アルプス・グリーンデバイス株式会社 | Electric current sensor |
| JP2013238434A (en) * | 2012-05-11 | 2013-11-28 | Osaka City Univ | Power factor measurement device |
| CN109328307A (en) * | 2016-07-06 | 2019-02-12 | 株式会社村田制作所 | Magnetic Sensor and the current sensor for having the Magnetic Sensor |
-
1994
- 1994-04-28 JP JP6091943A patent/JPH07297464A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7157905B1 (en) | 2004-02-27 | 2007-01-02 | Murata Manufacturing Co., Ltd. | Long magnetic sensor |
| WO2011074488A1 (en) * | 2009-12-15 | 2011-06-23 | アルプス電気株式会社 | Magnetic sensor |
| JP2012122792A (en) * | 2010-12-07 | 2012-06-28 | Alps Electric Co Ltd | Magnetic sensor |
| WO2012172946A1 (en) * | 2011-06-13 | 2012-12-20 | アルプス・グリーンデバイス株式会社 | Electric current sensor |
| JP2013238434A (en) * | 2012-05-11 | 2013-11-28 | Osaka City Univ | Power factor measurement device |
| CN109328307A (en) * | 2016-07-06 | 2019-02-12 | 株式会社村田制作所 | Magnetic Sensor and the current sensor for having the Magnetic Sensor |
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