JPH0729709A - Voltage-dependent nonlinear resistor - Google Patents
Voltage-dependent nonlinear resistorInfo
- Publication number
- JPH0729709A JPH0729709A JP5174170A JP17417093A JPH0729709A JP H0729709 A JPH0729709 A JP H0729709A JP 5174170 A JP5174170 A JP 5174170A JP 17417093 A JP17417093 A JP 17417093A JP H0729709 A JPH0729709 A JP H0729709A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- varistor
- resistance
- zinc oxide
- bismuth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- Inorganic Compounds Of Heavy Metals (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、印加電圧に応じて抵抗
値が非直線的に変化する抵抗体素子(以下、バリスタと
称する)に関し、詳細にはバリスタ電圧を小さくして低
電圧駆動のコンピュータ内蔵機器に対応できるととも
に、漏れ電流を小さくでき、かつサージ耐量,静電気耐
量等の電気的特性を向上できるようにした組成物に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resistor element (hereinafter referred to as a varistor) whose resistance value changes non-linearly according to an applied voltage. The present invention relates to a composition which can be applied to a device built in a computer, can reduce leakage current, and can improve electrical characteristics such as surge resistance and electrostatic resistance.
【0002】[0002]
【従来の技術】近年、通信機器等の各種の電子機器の分
野においては、小型化とともに電子部品の集積化が急速
に進んでおり、これに伴ってノイズ吸収素子として採用
されるバリスタにおいても小型化,低電圧化の要求が強
くなっている。また、マイクロコンピュータが搭載され
た電子機器では、デジタル制御処理が行われることから
EMIノイズに起因する半導体素子の破壊や誤動作が生
じるおそれがある。このノイズの電子機器への侵入経路
は電源部分及び信号配線部分が多く、このため電源部,
信号配線部の入出力部分に用いられるノイズフィルタの
役割が重要視されている。上記EMIノイズの問題を解
消するには、ノイズを電子機器から出さず、かつ機器に
侵入させないことが必要である。このようなノイズから
電子機器を保護する素子として、従来、酸化亜鉛を主成
分としたバリスタが提案されている(例えば、特開昭5
4−163395号公報参照)。2. Description of the Related Art In recent years, in the field of various electronic devices such as communication devices, miniaturization and rapid integration of electronic parts are accompanied, and accordingly, varistor used as a noise absorbing element is also small There is a strong demand for higher voltage and lower voltage. Further, in an electronic device equipped with a microcomputer, since the digital control process is performed, there is a possibility that the semiconductor device may be destroyed or malfunction due to EMI noise. There are many power supply parts and signal wiring parts in the path of this noise entering the electronic device.
The role of the noise filter used in the input / output portion of the signal wiring portion is emphasized. In order to solve the above-mentioned problem of EMI noise, it is necessary that noise is not emitted from the electronic device and does not enter the device. As an element for protecting electronic devices from such noise, a varistor containing zinc oxide as a main component has been proposed in the past (for example, Japanese Patent Laid-Open No. Sho 5).
No. 4-163395).
【0003】ところで酸化亜鉛を主成分とするバリスタ
では、素子の厚さ1mm当たりのバリスタ電圧
(V1mA )を100V以下にすることは困難であることか
ら、低電圧駆動のコンピュータ搭載機器には対応できな
い。ここで、バリスタ電圧は素子の電極間に存在する結
晶粒界の数に支配され、この結晶粒界の数が小さいほど
低くなる。このため低電圧のバリスタ素子を得るには、
素子の厚さを薄くして電極間距離を小さくしたり、ある
いは結晶粒子を成長させて電極間に存在する結晶粒界数
を少なくしたりする方法が採用されている。By the way, with a varistor containing zinc oxide as a main component, it is difficult to set the varistor voltage (V 1mA ) per 1 mm of the element thickness to 100 V or less. Can not. Here, the varistor voltage is controlled by the number of crystal grain boundaries existing between the electrodes of the element, and becomes lower as the number of crystal grain boundaries is smaller. Therefore, to obtain a low-voltage varistor element,
A method of reducing the thickness of the device to reduce the distance between the electrodes or growing crystal grains to reduce the number of crystal grain boundaries existing between the electrodes is adopted.
【0004】[0004]
【発明が解決しようとする課題】ところが上記従来のバ
リスタにおいて、素子厚さを薄くするとそれだけ強度が
低下することから製造上問題があり、また素子の体積が
小さくなるほどエネルギー耐量も小さい。さらに素子を
薄くすると焼成時に拡散電極材料の影響が大きくなり、
その結果素子の抵抗が小さくなって漏れ電流が増大する
という問題がある。However, in the above-mentioned conventional varistor, there is a problem in manufacturing because the strength decreases as the element thickness decreases, and the energy tolerance decreases as the volume of the element decreases. Furthermore, if the element is made thinner, the influence of the diffusion electrode material during firing will increase,
As a result, there is a problem that the resistance of the element decreases and the leakage current increases.
【0005】また、上記従来のバリスタにおいて結晶粒
子を成長させる場合、現状の焼成技術では粒径のばらつ
きが大きくなり易く、このためバリスタ電圧や静電容
量,あるいは非直線係数等の電気的特性にばらつきが生
じるという問題がある。さらに結晶粒子の大きい部分に
電流集中が生じ易いことから、サージ耐量,静電気耐量
が低下するという問題がある。Further, when growing crystal grains in the conventional varistor described above, the variation in grain size tends to be large in the present firing technique, and therefore electrical characteristics such as varistor voltage, capacitance, and nonlinear coefficient are increased. There is a problem that variations occur. Further, current concentration is likely to occur in a portion where the crystal grains are large, so that there is a problem that surge resistance and electrostatic resistance are reduced.
【0006】本発明は上記従来の状況に鑑みてなされた
もので、バリスタ電圧を小さくして低電圧駆動のコンピ
ュータ機器に対応できるとともに、漏れ電流を低減で
き、サージ耐量,静電気耐量等の電気的特性を向上でき
る電圧非直線抵抗体を提供することを目的としている。The present invention has been made in view of the above conventional circumstances, and can be applied to computer equipment of low voltage drive by reducing the varistor voltage, leakage current can be reduced, and electrical resistance such as surge resistance and electrostatic resistance can be reduced. It is an object of the present invention to provide a voltage non-linear resistor whose characteristics can be improved.
【0007】[0007]
【課題を解決するための手段】本件発明者らは、上記目
的を達成するために、主成分の酸化亜鉛に添加する各種
の副成分について検討したところ、これら添加物を選定
することにより素子の厚さ,及び結晶粒子のばらつきに
よる電気的特性の悪化を改善できることを見出し、本発
明を成したものである。Means for Solving the Problems In order to achieve the above-mentioned object, the inventors of the present invention have studied various sub-components added to the main component zinc oxide. The present invention has been accomplished by finding that deterioration of electrical characteristics due to variations in thickness and crystal grains can be improved.
【0008】そこで本発明は、主成分としての酸化亜鉛
に、副成分としてビスマス,マンガン,コバルト,ある
いはプラセオジムの各元素又はその化合物を添加したこ
とを特徴とする電圧非直線抵抗体である。Therefore, the present invention is a voltage non-linear resistor characterized in that each element of bismuth, manganese, cobalt or praseodymium or a compound thereof is added to zinc oxide as a main component as a sub ingredient.
【0009】ここで、上記副成分を添加する場合、各元
素をその酸化物であるBi2 O3 ,Mn3 O4 ,Co
O,Pr6 O11に換算してそれぞれ0.10〜3.00mol %,
0.10 〜3.00mol %, 0.10〜3.00mol %, 0.005 〜1.00m
ol %の範囲で添加するのが望ましい。これにより電気
的特性の改善効果が顕著に得られるからである。即ち、
上記Pr6 O11を所定量添加することにより非直線係
数,及び静電気耐量の向上を図ることができ、また上記
Mn3 O4 ,CoOの添加により非直線係数,絶縁抵
抗,サージ耐量の向上が図れる。さらに上記Bi2 O3
を所定量添加することによりバリスタ電圧を小さくでき
る。Here, when the above-mentioned subcomponents are added, each element is its oxide Bi 2 O 3 , Mn 3 O 4 , and Co.
Converted to O and Pr 6 O 11 , 0.10 to 3.00 mol%,
0.10〜3.00mol%, 0.10〜3.00mol%, 0.005〜1.00m
It is desirable to add in the range of ol%. This is because the effect of improving the electrical characteristics can be remarkably obtained. That is,
By adding the above-mentioned Pr 6 O 11 in a predetermined amount, it is possible to improve the non-linear coefficient and the electrostatic resistance, and by adding the above Mn 3 O 4 and CoO, the non-linear coefficient, the insulation resistance and the surge withstand can be improved. Can be achieved. Further, the above Bi 2 O 3
The varistor voltage can be reduced by adding a predetermined amount of.
【0010】また上記電圧非直線抵抗体を製造するに
は、酸化亜鉛に上述の各種副成分を添加混合し、これを
所定形状に成形し、この成形体を高温焼成して焼結体を
得た後、該焼結体の両主面に電極を形成するという、従
来と略同様の方法でもって製造できる。In order to manufacture the above voltage non-linear resistor, zinc oxide is mixed with the above-mentioned various subcomponents, and the mixture is molded into a predetermined shape, and the molded body is fired at a high temperature to obtain a sintered body. After that, the electrodes can be formed on both main surfaces of the sintered body, which is substantially the same as the conventional method.
【0011】[0011]
【作用】本発明に係る電圧非直線抵抗体によれば、酸化
亜鉛に副成分としてビスマス,マンガン,コバルト,プ
ラセオジムを添加したので、素子の厚さを薄くすること
なくバリスタ電圧を小さくできることから、機械的強度
の低下やエネルギー耐量の低下を回避できる。また結晶
粒子のばらつきによる電流集中が生じにくくなり、サー
ジ耐量の特性を向上でき、ひいては低電圧駆動の電子デ
バイスを、EMIノイズから保護することができる。According to the voltage non-linear resistor of the present invention, since bismuth, manganese, cobalt, and praseodymium are added to zinc oxide as subcomponents, the varistor voltage can be reduced without reducing the thickness of the element. It is possible to avoid a decrease in mechanical strength and a decrease in energy resistance. In addition, current concentration due to variations in crystal particles is less likely to occur, surge withstand characteristics can be improved, and electronic devices driven by low voltage can be protected from EMI noise.
【0012】[0012]
【実施例】以下、本発明の実施例を説明する。本実施例
は、本発明の電圧非直線抵抗体を製造し、これの効果を
確認するために行った特性試験について説明する。EXAMPLES Examples of the present invention will be described below. This example describes a characteristic test conducted to manufacture the voltage non-linear resistor of the present invention and confirm the effect thereof.
【0013】まず、本実施例の電圧非直線抵抗体の製造
方法について説明する。主成分であるZnOを準備し、
これにBi2 O3 ,Mn3 O4 ,CoO,及びPr6 O
11をそれぞれ所定量添加し、これを十分に混合した後、
700 〜900 ℃の温度で数時間仮焼成を行う。First, a method of manufacturing the voltage nonlinear resistor of this embodiment will be described. Prepare ZnO which is the main component,
Bi 2 O 3 , Mn 3 O 4 , CoO, and Pr 6 O
After adding a predetermined amount of 11 and mixing them well,
Calcination is performed at a temperature of 700-900 ℃ for several hours.
【0014】次に上記仮焼成粉をボールミルにより十分
粉砕した後、プレスで直径6mm×厚さ0.6 mmの円板
状に成形する。次いで、この成形体を大気中にて1250〜
1400℃の温度で3時間加熱,焼成して焼結体を得る。こ
のようにして得られた焼結体にこれの厚さが0.5 mmと
なるよう研磨加工を施し、次いでこれの両主面に直径3
mmのAgペーストを塗布し、この後焼き付けて電極を
形成する。これにより本実施例の電圧非直線抵抗体が製
造される。Next, the above calcined powder is sufficiently crushed by a ball mill and then pressed into a disk shape having a diameter of 6 mm and a thickness of 0.6 mm. Next, this molded body is heated in the atmosphere at 1250 to
A sintered body is obtained by heating and firing at a temperature of 1400 ° C for 3 hours. The thus-obtained sintered body was ground to a thickness of 0.5 mm, and then both main surfaces thereof had a diameter of 3 mm.
mm of Ag paste is applied and then baked to form electrodes. As a result, the voltage nonlinear resistor of this example is manufactured.
【0015】[0015]
【表1】 [Table 1]
【0016】表1は、上記製造方法により得られた電圧
非直線抵抗体の効果を確認するために行った特性試験の
結果を示す。この試験は、上記Bi2 O3 ,Mn
3 O4 ,CoO,Pr6 O11の添加量をそれぞれ0.00〜
5.00mol %,0.00 〜5.00mol %,0.00 〜5.00mol %,0.0
00〜5.000 mol %の範囲で変化させて多数の試料を作成
した(試料No. 1〜No. 27参照)。表中、試料No. 1
〜9はPr6 O11量、試料No. 10〜15はCoO量、
試料No. 16〜21はMn3 O4 量、試料No. 22〜2
7はBi2 O3 量をそれぞれ上記範囲内で変化させたも
のを示す。Table 1 shows the results of a characteristic test conducted to confirm the effect of the voltage non-linear resistor obtained by the above manufacturing method. This test is based on the above-mentioned Bi 2 O 3 , Mn.
The addition amount of 3 O 4 , CoO, and Pr 6 O 11 is 0.00-
5.00mol%, 0.00 ~ 5.00mol%, 0.00 ~ 5.00mol%, 0.0
A large number of samples were prepared by changing the range of 00 to 5.000 mol% (see Sample No. 1 to No. 27). Sample No. 1 in the table
To 9 is Pr 6 O 11 weight Sample No. 10 to 15 are the amount of CoO,
Sample Nos. 16 to 21 are Mn 3 O 4 amount, Sample Nos. 22 to 2
7 shows the amount of Bi 2 O 3 varied within the above range.
【0017】そして上記各試料No. 1〜27のバリスタ
電圧の50%の電圧を30秒間印加したときの絶縁抵抗(I
R)、バリスタ電圧(V1mA )、また各試料に1mA〜10
mAの電流が流れるときの非直線係数(α1-10mA)、及び
静電容量を測定するとともに、サージ耐量A、静電気耐
量Kvを測定した。上記サージ耐量は8×20μ秒の三角電
流波を印加してもバリスタ素子が破壊しない電流値を示
し、静電気耐量はIEC801-2準拠の静電気放電パルス
を印加しても素子が破壊しない放電電圧の最大値を示
す。Insulation resistance (I) when 50% of the varistor voltage of each sample No. 1-27 was applied for 30 seconds
R), varistor voltage (V 1mA ), and 1mA to 10 for each sample
The non-linear coefficient (α 1-10 mA ) when a current of mA flows and the electrostatic capacity were measured, and the surge withstand amount A and the electrostatic withstand amount Kv were measured. The above surge resistance is the current value at which the varistor element is not destroyed even when a triangular current wave of 8 × 20 μs is applied, and the electrostatic withstand capacity is the discharge voltage at which the element is not destroyed even when an electrostatic discharge pulse conforming to IEC 801-2 is applied. Indicates the maximum value.
【0018】表1において、Pr6 O11量を0及び0.00
1mol%とした各試料No. 1,No. 2の場合、静電気耐量
及び非直線係数が少し低くなっており、またPr6 O11
量を5.0mol%とした試料No. 9の場合は非直線係数は高
いもののバリスタ電圧が若干高くなっている。一方、上
記Pr6 O11量を0.005 〜1.0mol%とした各試料No.3
〜8の場合は、非直線係数が26.9〜37.2、静電気耐量が
30Kvと向上しており、上記Pr6 O11を所定量添加する
ことにより非直線係数, 静電気耐量を向上できることが
わかる。In Table 1, the amounts of Pr 6 O 11 are 0 and 0.00.
In the case of each sample No. 1 and No. 2 with 1 mol%, the electrostatic withstand capacity and the nonlinear coefficient are slightly low, and Pr 6 O 11
In the case of Sample No. 9 in which the amount was 5.0 mol%, the nonlinear coefficient was high, but the varistor voltage was slightly high. On the other hand, each sample No. 3 in which the amount of Pr 6 O 11 is 0.005 to 1.0 mol%
In the case of ~ 8, the nonlinear coefficient is 26.9-37.2, and the electrostatic withstand capability is
It is improved to 30 Kv, and it can be seen that the nonlinear coefficient and the electrostatic withstand capability can be improved by adding a predetermined amount of Pr 6 O 11 .
【0019】また、上記CoO,Mn3 O4 量を0mol
%とした各試料No. 10,No. 16の場合、絶縁抵抗
値,非直線係数が低くなっており、上記添加量を5.0mol
%とした各試料No. 15,21の場合はバリスタ電圧が
高くなっている。これに対して上記添加量を0.01〜3.00
mol %とした各試料No. 11〜14,17〜20の場合
は、抵抗値が20.7〜105MΩ、非直線係数が22.9〜38.5、
サージ耐量, 静電耐量がそれぞれ200A,30Kv と高くなっ
ている。このように上記Mn3 O4 ,CoOを所定量添
加することによって、抵抗値, 非直線係数, サージ耐
量, 及び静電気耐量の各特性を向上できることがわか
る。The amount of CoO and Mn 3 O 4 is 0 mol.
%, Each sample No. 10 and No. 16 has low insulation resistance and non-linear coefficient.
%, The varistor voltage is high in the case of each sample No. 15 and 21. On the other hand, the above addition amount is 0.01 to 3.00
In the case of each sample No. 11 to 14 and 17 to 20 in mol%, the resistance value is 20.7 to 105 MΩ, the nonlinear coefficient is 22.9 to 38.5,
The surge withstand capability and electrostatic withstand capability are as high as 200A and 30Kv, respectively. Thus, it can be seen that the addition of the above-mentioned Mn 3 O 4 and CoO in a predetermined amount makes it possible to improve the characteristics of resistance, non-linear coefficient, surge resistance, and electrostatic resistance.
【0020】さらに、上記Bi2 O3 量を0mol %とし
た試料No. 22,及び添加量を5.0mol %とした試料No.
27の場合、両者ともバリスタ電圧が高くなってい
る。これに対してBi2 O3 量を0.01〜3.00mol %とし
た各試料23〜26では、バリスタ電圧が28.2〜43.2V
と小さくなっており、このBi2 O3 を所定量添加する
ことによりバリスタ電圧を下げることができる。Further, sample No. 22 in which the amount of Bi 2 O 3 was 0 mol% and sample No. 22 in which the amount of addition was 5.0 mol% were used.
In the case of No. 27, the varistor voltage is high in both cases. On the other hand, in each of the samples 23 to 26 in which the Bi 2 O 3 amount was 0.01 to 3.00 mol%, the varistor voltage was 28.2 to 43.2V.
The varistor voltage can be lowered by adding a predetermined amount of Bi 2 O 3 .
【0021】このように本実施例によれば、上述のよう
にZnOに、Bi2 O3 ,Mn3 O 4 ,CoO,Pr6
O11をそれぞれ所定量添加することにより、バリスタ電
圧,非直線係数,サージ耐量及び静電気耐量等の各電気
的特性を向上でき、ひいては低電圧駆動のコンピュータ
が搭載された電子機器に対応できる。As described above, according to this embodiment, as described above.
ZnO, Bi2O3, Mn3O Four, CoO, Pr6
O11By adding the specified amount of
Electricity such as pressure, nonlinear coefficient, surge resistance and electrostatic resistance
Computer that can improve its dynamic characteristics and is driven by low voltage
Compatible with electronic devices equipped with.
【0022】[0022]
【発明の効果】以上のように本発明に係る電圧非直線抵
抗体によれば、主成分の酸化亜鉛に副成分としてビスマ
ス,マンガン,コバルト,プラセオジムの各元素又はそ
の化合物を添加したので、バリスタ電圧を小さくして低
電圧駆動のコンピュータ内蔵機器に対応できるととも
に、漏れ電流を小さくでき、かつサージ耐量,静電気耐
量等の電気的特性を向上できる効果がある。As described above, according to the voltage non-linear resistor according to the present invention, each element of bismuth, manganese, cobalt and praseodymium or its compound is added as a sub-component to the zinc oxide as the main component. This has the effects of reducing the voltage and supporting low-voltage drive built-in computer equipment, reducing the leakage current, and improving electrical characteristics such as surge resistance and electrostatic resistance.
Claims (2)
してビスマス,マンガン,コバルト,プラセオジムの各
元素又はその化合物を添加したことを特徴とする電圧非
直線抵抗体。1. A voltage non-linear resistor comprising zinc oxide as a main component, to which bismuth, manganese, cobalt, praseodymium elements or compounds thereof are added as accessory components.
ガン,コバルト,プラセオジムの各元素をその酸化物で
あるBi2 O3 ,Mn3 O4 ,CoO,Pr 6 O11に換
算してそれぞれ0.10〜3.00mol %,0.10 〜3.00mol %,
0.10〜3.00mol %, 0.005 〜1.00mol %の範囲で添加し
たことを特徴とする電圧非直線抵抗体。2. The bismuth and man according to claim 1,
The oxides of the elements gun, cobalt, praseodymium
Bi2O3, Mn3OFour, CoO, Pr 6O11Converted to
0.10〜3.00mol%, 0.10〜3.00mol%,
0.10 to 3.00 mol%, 0.005 to 1.00 mol%
A voltage non-linear resistor characterized in that
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5174170A JPH0729709A (en) | 1993-07-14 | 1993-07-14 | Voltage-dependent nonlinear resistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5174170A JPH0729709A (en) | 1993-07-14 | 1993-07-14 | Voltage-dependent nonlinear resistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0729709A true JPH0729709A (en) | 1995-01-31 |
Family
ID=15973933
Family Applications (1)
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JP5174170A Withdrawn JPH0729709A (en) | 1993-07-14 | 1993-07-14 | Voltage-dependent nonlinear resistor |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7075404B2 (en) | 2002-08-20 | 2006-07-11 | Murata Manufacturing Co., Ltd. | Porcelain composition for varistor and varistor |
KR101329682B1 (en) * | 2007-03-30 | 2013-11-15 | 티디케이가부시기가이샤 | Voltage non-linear resistance ceramic composition and voltage non-linear resistance element |
-
1993
- 1993-07-14 JP JP5174170A patent/JPH0729709A/en not_active Withdrawn
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7075404B2 (en) | 2002-08-20 | 2006-07-11 | Murata Manufacturing Co., Ltd. | Porcelain composition for varistor and varistor |
KR101329682B1 (en) * | 2007-03-30 | 2013-11-15 | 티디케이가부시기가이샤 | Voltage non-linear resistance ceramic composition and voltage non-linear resistance element |
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