JPH07286258A - Electrostatic driving type microactuator and production of valve as well as electrostatic driving type pump - Google Patents

Abstract

PURPOSE:To provide a valve constituted to substantially prevent cutting of the curved part of a film constituting a valve disk. CONSTITUTION:A prototype of an S-shaped film 7 constituting the valve disk is formed by utilizing the mold of a silicon wafer 2B formed by etching and thereafter, the driving section of the film 7 is produced by selectively etching the silicon wafers 1B, 2B and 3B. These silicon wafers 1B, 1B and 3B are laminated in three layers and fluid apertures 11A and 11B are formed. As a result, the cutting of the curved part of the film constituting the valve disk is substantially prevented.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an electrostatic drive type microactuator and a microvalve used in a semiconductor thin film manufacturing apparatus for forming a thin film on a substrate surface, and a static drive type microactuator. Electric drive type micro valve and pump.

[0002]

2. Description of the Related Art For the purpose of controlling a minute flow rate, a structure having a thin plate having one end fixed to a valve body and an electrode having a fluid opening arranged downstream of the thin plate surface is provided. A micro-valve that opens and closes the fluid opening by a thin plate by displacing the thin plate by electrostatic force is a proceeding of the eye
Micro Electro Mechanical System (Proceedi
ngs of the IEEE MicroElectro Mechanical System) 95-98, 1990.

This conventionally known microvalve is
A dielectric body including a flat electrode arranged on a silicon substrate and having an opening through which a fluid flows, and a dielectric valve body including a flat electrode for opening and closing the opening through which the fluid flows,
A structure in which the valve body forming a thin plate is attracted to an electrode surface provided on a silicon substrate by an electrostatic attraction generated between the electrodes, and the opening formed in a part of the electrode side structure is closed. It has become.

In the above microvalve, it takes a relatively long time to open and close the opening through which the fluid flows. This is because the responsiveness of the valve is limited by the speed of the restoring force of the thin plate spring that is the valve body. Further, the electrostatic attraction force when the valve body closes the fluid opening portion needs to be sufficiently larger than the restoring force of the thin plate spring. However, since the electrostatic attractive force is inversely proportional to the square of the distance between the electrodes, in order to obtain an electrostatic force sufficient to overcome the return force of the spring, in the above-described conventional structure, the thin valve body plate and the silicon substrate are It is necessary to make the gap with the provided electrode within several tens of μm, for example.

Therefore, in the microvalve having the above structure,
The flow rate of fluid that can flow when the opening is open is limited because of the gap.
When the above micro valve is used in a semiconductor thin film manufacturing apparatus that handles a dilute gas, there is a problem in that a flow rate of 2 sccm or more cannot be obtained.

As means for micronizing the gas valve,
A method of manufacturing a valve body of an electrostatically driven valve as an S-shaped film that is a metal film by using a sacrificial layer is described in Japanese Patent Application No. 4-136622, which is a prior application of the present inventors. There is. An electrostatically actuated gas valve using a film type actuator driven by electrostatic force described in Japanese Patent Application No. 4-136622 discloses a film serving as a valve element in which an electrode as a driving source of the film is close to the film. Since the portion is sequentially attracted and moved by the electrostatic force, the opening / closing stroke of the valve body is not limited, and the conductance can be arbitrarily set. Further, since the valve is opened and closed only by the electrostatic force and the restoring force due to the spring force of the film itself is not involved, the valve can be opened and closed at high speed.

[0007]

[Patent Document 1] Japanese Patent Application No. 4-136
In the technology described in No. 622, in order to manufacture an S-shaped film that is a movable part, a groove-like processing is performed on the substrate surface,
After forming a sacrificial layer inside the groove, a film material is deposited on the surface, and then the sacrificial layer is removed to release the film in a movable state. The profile of the film also transfers the cross-sectional profile of the sacrificial layer inside the groove of the substrate. This method has a problem that it is difficult to control the cross-sectional profile of the sacrificial layer, and if a sharp edge-shaped profile remains in a part, the formed S-shaped film is cut at this part.

An object of the present invention is to form a metal film which is difficult to cut the bent portion.

[0009]

As a first means, the above-mentioned object is to provide a second substrate in which a hollow portion is formed and a metal film having a bendable portion that is bendable inside the hollow portion is provided on one surface thereof. And a first substrate and a third substrate that are sandwiched by insulating layers to form electrodes, and then, the first substrate is placed on the surface on which the metal film is provided with the second substrate sandwiched between the first substrate and the third substrate. In a method of manufacturing an electrostatically driven microactuator, which comprises a step of laminating a third substrate on the back surface of the second substrate, one of the second substrate and the second substrate is formed when the metal film is formed on the second substrate. By forming a groove portion on the surface of by etching, forming the metal film on the surface including the groove portion, by forming the hollow portion by etching from the direction of the back surface of the surface where the groove portion is provided. To be achieved.

Further, as a second means, it is sandwiched between a second substrate having a hollow portion formed on one surface thereof and a metal film having a bendable portion capable of bending inside the hollow portion, and an insulating layer. First and third substrates that form electrodes, and then the first substrate is provided on the surface on which the metal film is provided with the second substrate interposed therebetween, and the third substrate is provided on the back surface of the surface. In a method of manufacturing an electrostatically actuated microvalve including a step of stacking layers, it is achieved by forming a fluid opening portion opened through the hollow portion in each of the first and third substrates by etching. To be done.

[0011]

The groove portion having a depth of several tens μm to several hundreds μm is formed by anisotropic etching on the surface of the silicon substrate which is the second substrate. Next, a metal film serving as a valve body is formed on the silicon substrate in which the groove is formed. After forming the metal film, when the silicon substrate under the metal film is partially dissolved with an aqueous solution of potassium hydroxide, the metal film has a structure in which only the both ends of the metal film are held on the flat part of the silicon substrate. A bent metal film is formed on the portion. By forming the bent portion of the metal film having a bent shape directly in the groove formed on the silicon substrate, the sharp edge-shaped profile that occurs when transferring the cross-sectional profile of the conventional sacrificial layer is eliminated, and Even after the silicon substrate is etched, the bent portion of the bent metal film is less likely to be cut at the upper portion of the groove.

The method of manufacturing the above microvalve is as follows:
Since it is manufactured by using the semiconductor fine processing technology, a plurality of valves can be integrated on a silicon substrate, and a multifunctional and inexpensive valve can be obtained.

[0013]

Embodiments of the present invention will be described with reference to FIGS. 1 to 9. FIG. 1 is a sectional view of an electrostatic drive type microactuator (hereinafter referred to as an actuator), and FIG. 2 is a sectional view of an electrostatic drive type microvalve (hereinafter referred to as a valve) using an actuator.

In the actuator shown in FIG. 1, a second substrate 2A having a film 7 as a valve body, which is a metal film, formed on one surface and an insulating layer 4 formed on the back surface of the surface is arranged as an intermediate layer. A first substrate 1A arranged facing the surface of the substrate 2A on which the film 7 is formed with an insulating layer 4A in between, and an insulating layer facing the surface of the substrate 2A on which the insulating layer 4 is formed. The third substrate 3A arranged via the layer 4B is laminated to form three layers. A cavity 13 is formed in the substrate 2A to form a hollow portion for passing a fluid,
The film 7 forming the valve body is bent by a part until it comes into contact with the surface of the substrate 3A facing the substrate 2A by the convex portion protruding toward the cavity 13 side of the substrate 1A (hereinafter, A structure having an S-shaped portion (hereinafter referred to as an S-shape) is provided, and only the both ends thereof are held by the flat portion of the substrate 2A, and the other end portions are not fixed.

The substrates 1A and 3A have the insulating layer 4
Surrounded by A and 4B, the S of the S-shaped film 7
Electrodes 5A and 5B for driving the letter portions are formed respectively. Further, on the substrate 1A, an electric contact area 9B for connecting the electrode 5A and a lead wire (not shown) from the outside is arranged by removing a part of the insulating layer 4A. Through the film 7
And a hole reaching an electrical contact area 9A for connecting a lead wire (not shown) from the outside is arranged. Further, on the substrate 3A, an electrical contact area 9C for connecting the electrode 5B and a lead wire (not shown) from the outside is arranged by removing a part of the insulating layer 4B. The inclined surface of the S-shaped portion of the film 7 is moved left and right in the cavity 13 by controlling the voltage applied to the electrodes 5A and 5B.

FIG. 2 shows a cross section of a valve using the actuator. The valve has a structure in which a port, which is an opening for fluid for letting in and out fluid, is added to a part of the actuator. The port 11A penetrates the substrate 1A and is opened in the cavity 13 of the substrate 2A, and the port 11B penetrates the substrate 3A and is opened in the cavity 13 of the substrate 2A facing the port 11A. . The fluid in the cavity 13 of the substrate 2A is discharged from either the port 11A or the port 11B depending on the position of the S-shaped portion of the film 7. The fluid is introduced into the cavity 13 from an inlet port (not shown) formed in the substrate 1A or the substrate 3A.

FIG. 3 is a process diagram showing a first manufacturing procedure of the electrostatically actuated microactuator. The details of the manufacturing method of the microactuator will be described below.

(1) Forming the groove portion of the substrate 2A in the process shown in FIGS. Second substrate, thickness 2
A silicon etching mask pattern 20A is formed on the upper surface of the 20 μm silicon wafer 14A. A silicon oxide film formed by thermal oxidation was used for the mask. The silicon wafer 14A is anisotropically etched to form a groove 28 having a width of 500 μm, a length of 2 to 3 mm, and a depth of about 100 to 150 μm. The etchant used for anisotropic etching was 40% potassium hydroxide, and the temperature of the solution was 68 ° C.
Is. When a silicon wafer whose crystal plane orientation on the substrate surface is (100) is used, the plane orientation on the side wall of the groove 28 is (11
It becomes 1).

(2) Formation of an etching mask pattern by the process shown in FIG. Silicon wafer 1
Mask pattern 2 for etching silicon on the back surface of 4A
0B is formed. A silicon oxide film formed by thermal oxidation was used for the mask.

(3) Patterning of the metal film by the process shown in FIG. The metal film 8 is formed on the surface of the silicon wafer 14A having the groove 28 by lift-off.
Pattern. The patterning procedure of the metal film by lift-off is shown below.

(A) A photoresist is spin-coated on the silicon wafer 14A. At this time, it is necessary to select the viscosity of the photoresist and the rotation speed of the spinner so that the photoresist has a sufficient thickness inside and outside the groove. For example, the viscosity of photoresist is 35 cp and the rotation speed of spinner is 1500 rp.
m.

(B) The photoresist is exposed and developed,
Pattern the photoresist. By this operation, a resist pattern having a reverse relationship with a desired metal film pattern is formed.

(C) The metal film 8 is attached to the silicon wafer 1
Form on 4A.

The method for forming the metal film and the patterning method associated therewith are classified as follows. 1. Sputtering: Used only when forming a relatively thin film having a film thickness of 2 to 3 μm or less. In the case of sputtering, the internal stress of the metal thin film can be used for both compression and tension by operating parameters such as gas pressure and acceleration voltage during thin film formation. The internal stress of the film is 10 Gdyn / cm.
² (gas pressure 0.13 Pa, sputter rate 10 Å / s)
It is also possible to: After forming the metal film by sputtering, the resist under the metal film is removed to form a pattern of the metal film on the silicon wafer.

2. Plating: From a thin film of several μm or less to several hundred μ
It is possible to form a thick film of m or more. This is a method of forming a thin film, which has a higher film growth rate than sputtering and has high productivity. Further, the internal stress of the film is smaller than that of sputtering.
In the case of plating, if a metal film underlayer is formed under the resist pattern, the plating film grows on the underlayer.
That is, the plating film is formed according to the resist pattern. There is also a method that uses both sputtering and plating. First,
A metal film is patterned on the silicon wafer by a sputtering method. Next, a metal film is formed only on the metal film pattern by electrolytic plating or electroless plating.

The patterning method of the metal thin film based on the lift-off method has been described above. In addition to this, there is also a method of first forming a metal thin film on a silicon wafer and then patterning the metal film by photolithography, and a method of patterning the metal film by an ion beam. Which method is to be used is preferably determined by the etching resistance of the thin film, the film thickness and the like. In this embodiment, nickel or permalloy (iron-nickel alloy) that can sufficiently withstand an aqueous potassium hydroxide solution, which is an etchant of silicon, is used as the metal thin film.

(4) Preparation of S-shaped film by the process shown in FIG. When the silicon wafer 14A is etched in a potassium hydroxide aqueous solution based on the mask pattern 20B on the back surface of the wafer formed in (2), only the both ends of the metal film are held by the silicon wafer. The metal film has an S-shape with a part folded back.

(5) Assembly of the actuator by the process shown in (f) to (l) of FIG. Silicon wafer 14A manufactured in (4), electrode 5A, insulating layer 4A, and convex portion 2
Silicon wafer 14B which is the first substrate 1A having 6
Then, an electrostatic drive type microactuator can be formed by bonding three pieces of the silicon wafer 14C which is the third substrate 3A having the electrode 5B and the insulating layer 4B.

For joining, a photosensitive polyimide resin having adhesiveness even at a high temperature of 100 to 300 ° C. or 30
Lead glass that can be bonded at a temperature of 0 to 400 ° C. is used. It is also possible to join using a eutectic of metal.

FIG. 4 is a diagram showing a flow of the second manufacturing method of the actuator, and shows a process of the manufacturing method of the actuator in which the stroke in the surface direction of the metal film of the actuator can be arbitrarily set. In the first manufacturing method of the actuator shown in FIG. 3, since the stroke corresponds to the thickness of the silicon wafer 14A which is the second substrate 2A, the stroke of the actuator is unique depending on the thickness of the silicon wafer used. There is an inconvenience to decide on. The manufacturing method of the actuator shown in FIG. 4 is the same as the manufacturing method shown in FIG.
By adding a process such as etching, the stroke of the actuator can be arbitrarily set. The details of the manufacturing method will be described below.

(1A) Formation of a groove portion of a silicon wafer by the process shown in FIGS. 4 (a) and 4 (b). Second substrate 2A
The mask patterns 21A, 21B for etching silicon are formed on both sides of the silicon wafer 15A having a thickness of 200 μm.
To form. The mask pattern 21B is partially different in thickness. When a silicon wafer is etched in a potassium hydroxide aqueous solution based on the mask patterns on both sides, first, a groove 2 is formed on the upper surface side which is not protected by the mask.
8 is formed. After the groove 28 is etched to some extent, only the thin portion of the lower mask pattern 21B is etched and removed. When the silicon is again etched in the potassium hydroxide aqueous solution based on the masks of the thick portions on both sides, grooves 28 and 29 having different depths are formed. As described above, the groove portions having different depths can be formed by partially using the mask patterns having different thicknesses. The depth ratio of the groove 28 and the groove 29 can be changed by adjusting the thickness of the thick portion and the thin portion of the mask pattern 21B.

(2A) Preparation of S-shaped film by the process shown in (c) to (e) of FIG. Only the mask pattern 21A on the upper surface side is removed by etching. FIG. 4 (c)
The mask pattern 21B on the lower surface side shown in is used as a mask pattern for silicon etching after patterning the metal film. Next, the metal film is patterned by the same process as in FIG. 4 based on the metal film pattern 8 on the front surface and the mask pattern 21B on the back surface
The silicon wafer is etched in a 0% potassium hydroxide aqueous solution to form a metal film 8 held only on both ends by the silicon wafer. In addition, a part of the film is S
The character part is formed.

(3A) Preparation of a convex wafer by the process shown in (f) to (j) of FIG. Based on the etching mask patterns 21C and 21D, the silicon wafer 15B which is the first substrate 1A and the silicon wafer 15C which is the third substrate 3A are respectively etched in a potassium hydroxide aqueous solution to obtain the silicon wafers. The convex portions 26 and 27 facing the 15A side are formed. Two convex portions 26, 2
Silicon wafer 1 so that the combined size of heights 7 is equal to the thickness of silicon wafer 15A which is substrate 2A.
Etch 5B and 15C.

Insulating layers 4A and 4B and electrical contact areas 9B and 9C are formed on the surfaces of the silicon wafers 15B and 15C having the convex portions, respectively. The insulating layer 4
A silicon oxide film or a silicon nitride film was used for A and 4B. Bulk silicon wafer 1 is used for electrodes 5A and 5B.
5B and 15C were used respectively.

(4A) Assembly of the actuator by the process shown in (k) to (l) of FIG. Silicon wafer 1
5A, an electrode 5A, an insulating layer 4A and a silicon wafer 15B having a convex portion 26, an electrode 5B, an insulating layer 4B and a convex portion 27.
An electrostatically driven microactuator in which the stroke of the metal film can be arbitrarily set can be obtained by joining the three substrates with the silicon wafer 15C having the same as those in FIG.

In the case of the above manufacturing method, the stroke of the actuator corresponds to the height of the convex portion 26. The height of the convex portion 27 is set to be substantially equal to the depth of the groove portion 29. Also,
The height of the convex portion 26 which makes the film S-shaped when assembled is set to a value obtained by subtracting the height of the convex portion 27 from the thickness of the silicon wafer 15A. For example, the thickness of the silicon wafer 15A is 200 μm, the depth of the groove portion 29 is 100 μm, and the convex portion 2 is
When the heights of 6 and 27 are 100 μm and 100 μm, respectively, the stroke in the plane direction of the film is 100 μm.

From the above, the depth of the groove 28 and the groove 2
An actuator having an arbitrary stroke can be manufactured by changing the depth of 9, the height of the convex portion 26, and the height of the convex portion 27.

FIG. 5 is a diagram showing a flow of a first manufacturing method of the upper electrode which is the first substrate of the actuator. The silicon wafer 16A of the first substrate on which the convex portions 26 are formed is shown.
5 is a process diagram showing a manufacturing procedure of FIG. In the embodiments of FIGS. 3 and 4, the whole process of the actuator, particularly the production of the metal film is mainly described, and the details of forming the convex portion on the silicon wafer are not mentioned. Here, details of the method for producing a convex silicon wafer will be described with reference to FIG.

(1B) Formation of an etching mask pattern by the process shown in FIG. First substrate 1A
Silicon oxide films 22A, 22B, and 22C, which are mask patterns for etching, are formed on both surfaces of a silicon wafer 16A having a thickness of 400 μm by thermal oxidation (temperature 1100 ° C.). The silicon oxide film 22A is patterned by photolithography as shown in FIG. The substrate 2A is formed on the silicon oxide film 22A on the wafer surface.
A pattern for forming the hole 30 reaching the electric contact area 9A is formed. The silicon oxide film on the back surface of the wafer is patterned so as to have different thicknesses, such as a thick portion 22B and a thin portion 22C.

(2B) Formation of holes and projections reaching the electrical contact areas by the process shown in FIGS. 5B to 5C. The silicon oxide film 22A, the silicon oxide film 22B, and the silicon oxide film 22C, which are the mask patterns on both surfaces,
When the silicon wafer 16A is anisotropically etched based on each of them in a 40% potassium hydroxide aqueous solution (at a temperature of 68 ° C.), first, only the hole 30 portion reaching the electrical contact area is etched. Next, the lower mask pattern 22C is etched to remove only the thin portion. Again, the silicon wafer 16A is etched in an aqueous potassium hydroxide solution to form holes and projections 26 reaching the electrical contact areas. Then, the silicon oxide film 22A and the silicon oxide film 22B, which are the etching mask pattern, are removed.

(3B) Preparation of insulating layer and electrical contact area by the process shown in FIG. A silicon oxide film 4A is formed on the surface of the silicon wafer 16A by thermal oxidation. The silicon oxide film 4A electrically insulates the convex portion 26 and an S-shaped film (not shown). A silicon wafer 16A is used for the electrode 5A that drives the S-shaped film. An electric contact area 9B for electrically connecting the electrode and an electric circuit for driving an external actuator (not shown) is formed on a part of the insulating layer 4A.

FIG. 6 is a diagram showing a flow of a second method of manufacturing the upper electrode which is the first substrate of the actuator. The silicon wafer 17A which is the first substrate on which the convex portions are formed is shown.
It is a process diagram showing another production procedure of. Actually, since the actuators shown in FIGS. 1 to 5 are manufactured by batch processing on silicon wafers, after bonding three silicon wafers, they are divided into individual actuators by a dicing saw.

In the embodiment shown in FIG. 5, the silicon wafer is exposed at the lower end of the silicon wafer 16A having a convex portion, and the S-shaped film pattern 7 and the upper electrode 5A are at the end of the actuator. Are in close proximity. Therefore, when a high voltage is applied to the electrode 5A in order to drive the S-shaped film at a high speed, the electric field strength at the end becomes large and the dielectric breakdown easily occurs. In order to solve the above problem, in the embodiment shown in FIG. 6, a tapered structure is provided at both ends of the surface of the silicon wafer 17A having a convex portion on the film 7 side. By providing the taper, it is possible to increase the withstand voltage at the divided actuator ends, and it is possible to move the film at high speed by applying a high voltage.

The taper structure is not necessary when all the actuators are simultaneously operated in the same phase in the silicon wafer without dividing the actuators formed in the silicon wafer.

The electrostatically actuated microvalve shown in FIG. 2 is a microactuator shown in FIGS. 1 and 3 to 6 in which fluid inlet and outlet ports are added to the upper and lower electrodes. Therefore, the difference from the manufacturing method of the microactuator is the manufacturing method of the upper and lower electrodes.

7 and 8 are process diagrams showing a method of manufacturing the upper electrode 5A which is the first substrate 1B and the lower electrode 5B which is the third substrate 3B of the electrostatically actuated microvalve shown in FIG. Is. The convex silicon wafer 18 of FIG.
The manufacturing method of A is basically the same as the manufacturing method of the silicon wafer shown in FIGS. The difference is that the port 11A, which is a fluid opening through which a fluid flows in and out, is formed together with a hole reaching the electrical contact hole 9A.
The silicon wafer 19A shown in FIG. 8 has a port 11B which is a fluid opening portion through which fluid flows in and out by anisotropic etching.

FIG. 9 shows another embodiment of the electrostatically actuated microvalve. In the embodiment shown in FIGS. 1 to 8, silicon wafers are used for the upper and lower electrodes. Therefore, when microactuators or microvalves are manufactured on a silicon wafer by batch processing, each actuator on the silicon wafer cannot be electrically driven independently. FIG. 9 shows three silicon substrates (a), (b), and (c) for manufacturing an electrostatically driven microvalve that can be electrically independently driven. The silicon substrate in FIG. 9 shows a part of the valve in the silicon wafer.

9 (a), 9 (b) and 9 (c) respectively show an upper electrode wafer which is a first substrate, an S-shaped film wafer which is a second substrate, and a third substrate in order. The top view of a certain lower electrode wafer is shown. By bonding each of the three wafers in the order of (a), (b), and (c), the microvalve having the structure shown in FIGS. 1 to 8 can be manufactured. 9 (a) r and 9 (c) r.
Indicate the back surfaces of the substrates shown in FIGS. 9A and 9C, respectively.

The upper electrode wafer shown in FIG. 9A has a fluid opening 12A, electrode through holes 10A and 1A.
0B and 10C, the upper electrode pattern 6A, and the convex portion 2
6 and an insulating layer (not shown) formed on the electrode pattern. Through holes for electrode extraction 10A, 10
B and 10C are for connecting the S-shaped film and the external drive circuit, the lower electrode pattern and the external drive circuit, and the upper electrode pattern and the external circuit, respectively. Figure 9
The S-shaped film wafer of (b) consists of the film 8 held only on both ends by the silicon wafer. Figure 9
The lower electrode wafer in (c) has an opening 12 for fluid flow.
B and 12C, the lower electrode pattern 6B, and an insulating layer (not shown) formed on the electrode pattern.

FIG. 9 shows a switching valve for discharging the fluid introduced through the fluid flow-through opening 12C from either the opening 12A or 12B. By changing the shape and number of the fluid openings formed on the upper electrode wafer and the lower electrode wafer, an on / off valve, a valve that discretely changes the flow rate, and the like can be realized. Since the driving electrode pattern is formed on each valve formed on the silicon wafer, a plurality of valves can be driven independently.

An electrostatically driven valve is shown with reference to FIGS. 7 to 9. A pump can be manufactured by combining the electrostatically driven actuator and the electrostatically driven valve. For example, an electrostatic drive pump can be obtained by connecting two electrostatic drive valves and one electrostatic drive actuator through a channel formed on a silicon substrate. An actuator is formed in the center of the two valves to pump the fluid. The two valves act as check valves for unidirectional flow of fluid.

[0052]

According to the present invention, the bent portion of the film forming the valve body is less likely to be cut, and a plurality of valves can be integrated on a silicon substrate, which is highly functional and inexpensive. You can get a valve.

[Brief description of drawings]

FIG. 1 is a sectional view of an electrostatically driven microactuator according to an embodiment of the present invention.

FIG. 2 is a sectional view of an electrostatically actuated microvalve according to an embodiment of the present invention.

FIG. 3 is a cross-sectional view showing a flow of a first manufacturing method of the electrostatic drive type actuator of the embodiment of the present invention.

FIG. 4 is a cross-sectional view showing a flow of a second manufacturing method of the electrostatic drive type actuator of the embodiment of the present invention.

FIG. 5 is a cross-sectional view showing a flow of a first method of manufacturing the upper electrode of the electrostatic drive type actuator of the embodiment of the present invention.

FIG. 6 is a cross-sectional view showing a flow of a second manufacturing method of the upper electrode of the electrostatic drive type actuator of the embodiment of the present invention.

FIG. 7 is a cross-sectional view showing a flow of a method for manufacturing an upper electrode of an electrostatically actuated microvalve according to an embodiment of the present invention.

FIG. 8 is a cross-sectional view showing a flow of a method of manufacturing a lower electrode of an electrostatically actuated microvalve according to an embodiment of the present invention.

FIG. 9 is a plan view showing each plate of another example of the electrostatically actuated microvalve according to the embodiment of the present invention.

[Explanation of symbols]

1A, 1B 1st substrate 2A, 2B 2nd substrate 3A, 3B 3rd substrate 4, 4A, 4B Insulating layer 5, 5A, 5B Electrode 6A, 6B Electrode 7 Film 8 Film 9A, 9B, 9C Electrical contact Areas 10A, 10B, 10C Electrical contact areas 11A, 11B Fluid openings 12A, 12B, 12C Fluid openings 13 Valve cavities 14A, 14B, 14C Silicon wafers 15A, 15B, 15C Silicon wafers 16A Silicon wafers 17A Silicon wafers 18A Silicon wafers 19A Silicon wafer 20A, 20B Etching mask pattern 21,21A, 21B, 21C, 21D Etching mask pattern 22A, 22B, 22C Etching mask pattern 23A, 23B Etching mask pattern 24 A, 24B Etching mask pattern 25A, 25B Etching mask pattern 26 Convex portion 27 Convex portion 28 Groove portion 29 Groove portion 30 Hole reaching electrical contact area

Claims (5)

[Claims] 1. A second substrate having a hollow portion formed on one surface thereof and having a metal film having a bendable portion capable of bending inside the hollow portion; and a first substrate which is sandwiched between insulating layers to form an electrode. , And a third substrate, and then laminating the first substrate on the surface on which the metal film is provided with the second substrate sandwiched therebetween, and laminating the third substrate on the back surface of the surface. In the method for manufacturing an electrostatic drive type microactuator, which comprises: forming a metal film on the second substrate, forming a groove on one surface of the second substrate by etching, and including the groove. After manufacturing the metal film on the surface, the hollow portion is formed by etching from the direction of the back surface of the surface on which the groove portion is provided. 2. The method of manufacturing an electrostatically actuated microvalve according to claim 1, wherein at least one bent portion of the bent portion of the metal film is formed. 3. A second substrate having a hollow portion formed on one surface thereof and having a metal film having a bendable portion that can be bent inside the hollow portion; and a first substrate sandwiched between insulating layers to form an electrode. , And a third substrate, and then laminating the first substrate on the surface on which the metal film is provided with the second substrate sandwiched therebetween, and laminating the third substrate on the back surface of the surface. In the method of manufacturing an electrostatically driven microvalve, the electrostatically driven microvalve characterized in that a fluid opening opened through the hollow portion is formed in each of the first and third substrates by etching. How to make a microvalve. 4. An electrostatic drive type microvalve using an electrostatic drive type actuator, wherein the electrostatic drive type actuator is manufactured by the method according to claim 1. An electrostatically actuated microvalve characterized by being an actuator. 5. The electrostatic drive type microvalve according to claim 4, wherein at least two electrostatic drive type microvalves are combined in an electrostatic drive type pump using the electrostatic drive type microvalve. Electrostatic drive pump.