JP2628019B2 - Manufacturing method of electrostatically driven microactuator and valve, and electrostatically driven pump - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an electrostatically driven microactuator and a microvalve used in a semiconductor thin film manufacturing apparatus for forming a thin film on a substrate surface, and to a method for manufacturing an electrostatically driven microactuator. The present invention relates to an electrically driven microvalve and a pump.

[0002]

2. Description of the Related Art For the purpose of controlling a minute flow rate, a thin plate having one end fixed to a valve body and an electrode having a fluid opening disposed downstream of the thin plate surface are provided. A micro-valve that uses a thin plate to open and close the fluid opening by displacing the thin plate by electrostatic force is called Proceeding of the IEE.
Micro-electromechanical system (Proceedi
ngs of the IEEE MicroElectro Mechanical System), pp. 95-98, 1990.

[0003] This conventionally known microvalve is:
It is composed of a dielectric material having an opening through which a fluid flows through including a flat electrode disposed on a silicon substrate, and a dielectric valve body including a flat electrode that opens and closes an opening through which the fluid flows,
A structure in which the valve body forming a thin plate is attracted to an electrode surface provided on a silicon substrate by an electrostatic attractive force generated between the electrodes, and the opening portion opened in a part of the electrode-side structure is closed. It has become.

In the above-described microvalve, opening and closing the opening through which the fluid flows requires a relatively long time. This is because the response of the valve is limited by the speed of the return force of the thin plate spring as the valve element. Further, the electrostatic attraction when the valve element closes the fluid opening needs to be sufficiently larger than the return force of the thin plate spring. However, since the electrostatic attraction is inversely proportional to the square of the distance between the electrodes, in order to obtain an electrostatic force sufficient to overcome the return force of the spring, in the above-described conventional structure, the valve body thin plate and the silicon substrate are placed on the silicon substrate. It is necessary that the gap with the provided electrode is, for example, within several tens of μm.

Therefore, in the micro valve having the above structure,
The flow rate of the fluid that can flow when the opening is open is reduced because it is limited by the gap.
When the above-described microvalve is used in a semiconductor thin film manufacturing apparatus that handles a rare gas, there is a problem that a flow rate of 2 sccm or more cannot be obtained.

As means for micronizing a gas valve,
A method of manufacturing a valve body of an electrostatic drive type valve as an S-shaped film as a metal film using a sacrificial layer is described in Japanese Patent Application No. 4-136622, which is a prior application of the present inventors. I have. An electrostatically driven gas valve using a film type actuator driven by electrostatic force described in Japanese Patent Application No. 4-136622 discloses an electrostatically driven gas valve in which a film serving as a valve element is placed close to an electrode serving as a drive source of the film. Since it is sequentially moved by being attracted by electrostatic force from the portion where it is, the opening / closing stroke of the valve body is not limited, and the conductance can be set arbitrarily. Further, the opening and closing of the valve is performed only by electrostatic force, and the return force by the spring force of the film itself is not involved, so that the valve can be opened and closed at high speed.

[0007]

SUMMARY OF THE INVENTION The aforementioned Japanese Patent Application No. 4-136 is disclosed.
The technology described in No. 622 performs a groove-like processing on a substrate surface in order to manufacture an S-shaped film as a movable portion,
After forming a sacrificial layer inside the groove, a film material is formed on the surface, and then the sacrificial layer is removed to release the film to a movable state. The profile of the film transfers the cross-sectional profile of the sacrificial layer inside the groove of the substrate. In this method, it is difficult to control the cross-sectional profile of the sacrificial layer, and if a sharp edge-shaped profile remains in a part, the formed S-shaped film is cut off at this part.

An object of the present invention is to form a metal film in which a bent portion is not easily cut.

[0009]

The first object of the present invention is to provide, as a first means, a second substrate provided with a metal film having a hollow portion formed on one surface and having a bent portion which can be bent in the hollow portion. And first and third substrates each forming an electrode sandwiched by an insulating layer, and then the first substrate is placed on the surface provided with the metal film with the second substrate sandwiched therebetween. In the method of manufacturing an electrostatic drive type microactuator including a step of laminating a third substrate on a back surface of the surface, when forming the metal film on the second substrate, one of the second substrates is formed. By forming a groove on the surface of the groove by etching and forming the metal film on the surface including the groove, the hollow portion is formed by etching from the direction of the back surface of the surface on which the groove is provided. Achieved.

Further, as a second means, a second substrate having a hollow portion formed thereon and a metal film having a bent portion which can be bent in the hollow portion provided on one surface thereof is sandwiched between insulating layers. First and third substrates forming electrodes are formed, and then the first substrate is provided on the surface provided with the metal film with the second substrate interposed therebetween, and the third substrate is provided on the back surface of the surface. In the method of manufacturing an electrostatically driven microvalve, comprising the steps of: laminating a fluid opening formed in the first and third substrates through the hollow portion by etching. Is done.

[0011]

A groove having a depth of several tens of μm to several hundreds of μm is formed by anisotropic etching on the surface of the silicon substrate as the second substrate. Next, a metal film serving as a valve is formed on the silicon substrate on which the groove is formed. After the metal film is formed, when the silicon substrate under the metal film is partially dissolved with an aqueous solution of potassium hydroxide, the metal film has a structure in which only both ends are held on the flat portion of the silicon substrate, and the hollow portion of the silicon substrate becomes hollow. A bent metal film is formed at the portion. By forming the bent portion of the metal film having a bent shape directly in the groove formed on the silicon substrate, the sharp edge-like profile that occurs when transferring the cross-sectional profile of the conventional sacrificial layer is eliminated, and from the back surface Even after etching the silicon substrate, the bent portion of the bent metal film is less likely to be cut above the groove.

Further, the method of manufacturing the micro valve is as follows.
Since the valve is manufactured by using the semiconductor fine processing technology, a plurality of valves can be integrated on a silicon substrate, and a multifunctional and inexpensive valve can be obtained.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a sectional view of an electrostatically driven microactuator (hereinafter, referred to as an actuator), and FIG. 2 is a sectional view of an electrostatically driven microvalve (hereinafter, referred to as a valve) using an actuator.

In the actuator shown in FIG. 1, a second substrate 2A, on which a film 7 serving as a valve body made of a metal film is formed on one surface and an insulating layer 4 is formed on the back surface of the surface, is disposed as an intermediate layer. A first substrate 1A disposed on the surface of the substrate 2A on which the film 7 is formed with an insulating layer 4A interposed therebetween, and an insulating layer facing the surface of the substrate 2A on which the insulating layer 4 is formed. The third substrate 3A, which is arranged via the fourth substrate 4B, is stacked to form three layers. A cavity 13 is formed in the substrate 2A as a hollow portion through which a fluid passes,
The film 7 forming the valve body is bent by one part until it comes into contact with a surface of the substrate 3A facing the substrate 2A by a convex part protruding toward the cavity 13 of the substrate 1A (hereinafter, referred to as a bent part). (Hereinafter, referred to as an S-shaped portion), and only the two end portions are held on the flat portion of the substrate 2A, and the other end portions are not fixed.

The substrates 1A and 3A are provided on the insulating layer 4
A of the S-shaped film 7 surrounded by A and 4B.
Electrodes 5A and 5B for driving the character portion are formed respectively. Further, on the substrate 1A, an electrical contact area 9B for connecting the electrode 5A and an external lead wire (not shown) is arranged by removing a part of the insulating layer 4A. Through the film 7
And a hole reaching an electrical contact area 9A for connecting an external lead wire (not shown). Further, on the substrate 3A, an electrical contact area 9C for connecting the electrode 5B and a lead wire from the outside (not shown) is arranged by removing a part of the insulating layer 4B. The slope of the S-shaped portion of the film 7 is moved left and right in the cavity 13 by controlling the voltage applied to the electrodes 5A and 5B.

FIG. 2 shows a cross section of a valve using the actuator. The valve has a configuration in which a port that is a fluid opening through which fluid flows in and out of a part of the actuator is added. The port 11A is opened to the cavity 13 of the substrate 2A through the substrate 1A, and the port 11B is opened to the cavity 13 of the substrate 2A through the substrate 3A so as to face the port 11A. . The fluid in the cavity 13 of the substrate 2A is discharged from either the port 11A or the port 11B according to the position of the S-shaped portion of the film 7. The fluid is introduced into the cavity 13 from an inlet port (not shown) formed in the substrate 1A or 3A.

FIG. 3 is a process diagram showing a first manufacturing procedure of the electrostatic drive type microactuator. Hereinafter, a method of manufacturing the microactuator will be described in detail.

(1) Forming a groove in the substrate 2A in the process shown in FIGS. 3 (a) and 3 (b). Thickness 2 which is the second substrate
A silicon etching mask pattern 20A is formed on the upper surface of a 20 μm silicon wafer 14A. As the mask, a silicon oxide film formed by thermal oxidation was used. A groove 28 having a width of 500 μm, a length of 2 to 3 mm, and a depth of about 100 to 150 μm is formed on the silicon wafer 14A by anisotropic etching. The etchant used for the anisotropic etching was 40% potassium hydroxide, and the temperature of the solution was 68 ° C.
It is. When a silicon wafer whose crystal orientation on the substrate surface is (100) is used, the plane orientation of the side wall of the groove 28 is (11).
1).

(2) Forming an etching mask pattern by the process shown in FIG. Silicon wafer 1
4A silicon etching mask pattern 2 on back surface
OB is formed. A silicon oxide film formed by thermal oxidation was used as a mask.

(3) Patterning of the metal film by the process shown in FIG. The metal film 8 is formed on the surface of the silicon wafer 14A having the groove 28 by lift-off.
Is patterned. The procedure for patterning a metal film by lift-off is described below.

(A) A photoresist is spin-coated on the silicon wafer 14A. At this time, it is necessary to select the viscosity of the photoresist and the rotation speed of the spinner so that the photoresist has a sufficient thickness inside and outside the groove. For example, the viscosity of the photoresist is 35 cp, and the rotation speed of the spinner is 1500 rpm.
m.

(B) exposing and developing the photoresist,
Pattern the photoresist. By this operation, a resist pattern having a reversal relationship with a desired metal film pattern is formed.

(C) The metal film 8 is applied to the silicon wafer 1
4A.

The method of forming the metal film and the patterning method involved are classified as follows. 1. Sputtering: Used only when a relatively thin film having a thickness of 2 to 3 μm or less is formed. In the case of sputtering, the internal stress of the metal thin film can be used for both compression and tension by manipulating parameters such as gas pressure and acceleration voltage when forming the thin film. Note that the internal stress of the film is 10 Gdyn / cm.
² (Gas pressure 0.13Pa, sputter rate 10 ° / s)
It is also possible to: After forming the metal film by sputtering, the resist under the metal film is removed to form a pattern of the metal film on the silicon wafer.

2. Plating: From thin film of several μm or less to several hundred μ
m or more. This is a thin film forming method in which the film growth rate is faster than sputtering and high in productivity. Further, the internal stress of the film is smaller than that of sputtering.
In the case of plating, if an underlayer of a metal film is formed under the resist pattern, the plating film grows on the underlayer.
That is, a plating film is formed according to the resist pattern. There is also a method using both sputtering and plating. First,
A metal film is patterned on a silicon wafer by a sputtering method. Next, a metal film is formed only on the metal film pattern by electrolytic plating or electroless plating.

In the above, a method of patterning a metal thin film based on the lift-off method has been described. In addition, there are a method of first forming a metal thin film on a silicon wafer and then patterning the metal film by photolithography, and a method of patterning the metal film by an ion beam. Which method is used is desirably determined from the etching resistance, the film thickness, and the like of the thin film. In this embodiment, nickel or permalloy (iron-nickel alloy) that can sufficiently withstand an aqueous solution of potassium hydroxide, which is a silicon etchant, is used as the metal thin film.

(4) Preparation of an S-shaped film by the process shown in FIG. When the silicon wafer 14A is etched in an aqueous potassium hydroxide solution based on the mask pattern 20B on the back surface of the wafer formed in (2), only the both ends of the metal film are held by the silicon wafer. The metal film has an S-shape with a turn in part.

(5) Actuator assembly by the process shown in FIGS. The silicon wafer 14A manufactured in (4), the electrode 5A, the insulating layer 4A, and the projection 2
Wafer 14B as a first substrate 1A having a silicon wafer 14B
And three silicon wafers 14C as the third substrate 3A having the electrode 5B and the insulating layer 4B, thereby forming an electrostatically driven microactuator.

For bonding, a photosensitive polyimide resin having adhesiveness even at a high temperature of 100 to 300 ° C. or 30
Lead glass that can be joined at a temperature of 0 to 400 ° C. is used. It is also possible to join using a eutectic of a metal.

FIG. 4 is a flow chart of a second method of manufacturing an actuator, and shows a process of a method of manufacturing an actuator capable of arbitrarily setting a stroke in a plane direction of a metal film of the actuator. In the first manufacturing method of the actuator shown in FIG. 3, since the stroke corresponds to the thickness of the silicon wafer 14A as the second substrate 2A, the stroke of the actuator depends on the thickness of the silicon wafer to be used. There is the inconvenience of deciding. The manufacturing method of the actuator shown in FIG. 4 is different from the manufacturing method shown in FIG.
By adding processes such as etching, the stroke of the actuator can be arbitrarily set. The details of the manufacturing method will be described below.

(1A) Formation of a groove in a silicon wafer by the process shown in FIGS. 4A and 4B. Second substrate 2A
Mask patterns 21A and 21B for silicon etching on both surfaces of a 200 μm thick silicon wafer 15A.
To form The thickness of the mask pattern 21B is partially different. When the silicon wafer is etched in an aqueous potassium hydroxide solution based on the mask patterns on both sides, first, grooves 2 are formed on the upper surface side not protected by the mask.
8 are formed. After etching the groove 28 to some extent, only the thin portion of the lower mask pattern 21B is etched away. When the silicon is etched again in an aqueous potassium hydroxide solution using the masks of the thick portions on both sides, grooves 28 and 29 having different depths are formed. As described above, by using the mask patterns partially different in thickness, the groove portions having different depths can be formed. The ratio of the depth of the groove 28 to the depth of the groove 29 can be changed by adjusting the thickness of the thick portion and the thin portion of the mask pattern 21B.

(2A) Preparation of an S-shaped film by the processes shown in FIGS. Only the mask pattern 21A on the upper surface is removed by etching. FIG. 4 (c)
Is used as a mask pattern for silicon etching after patterning the metal film. Next, patterning of the metal film is performed in the same process as in FIG. 4 based on the metal film pattern 8 on the front surface and the mask pattern 21B on the back surface.
The silicon wafer is etched in a 0% aqueous solution of potassium hydroxide to form a metal film 8 having both ends held by the silicon wafer. Note that a part of the film has S
A character portion is formed.

(3A) Producing a convex wafer by the processes shown in FIGS. Based on the etching mask patterns 21C and 21D, the silicon wafer 15B as the first substrate 1A and the silicon wafer 15C as the third substrate 3A are respectively etched in a potassium hydroxide aqueous solution, and the silicon wafers are respectively etched. The projections 26 and 27 facing the 15A side are formed. Two convex portions 26, 2
7 so that the height of the silicon wafer 1 is equal to the thickness of the silicon wafer 15A as the substrate 2A.
Etch 5B and 15C.

The insulating layers 4A and 4B and the electrical contact areas 9B and 9C are formed on the surfaces of the silicon wafers 15B and 15C having the convex portions, respectively. The insulating layer 4
A and 4B used a silicon oxide film or a silicon nitride film. Bulk silicon wafer 1 is applied to electrodes 5A and 5B.
5B and 15C were used, respectively.

(4A) Actuator assembly by the process shown in FIGS. 4 (k) to (l). Silicon wafer 1
5A, an electrode 5A, an insulating layer 4A, and a silicon wafer 15B having a convex portion 26; an electrode 5B, an insulating layer 4B, and a convex portion 27;
By bonding the three substrates with the silicon wafer 15C having the same as in the case of FIG. 3, an electrostatically driven microactuator capable of arbitrarily setting the stroke of the metal film can be obtained.

In the case of the above manufacturing method, the stroke of the actuator corresponds to the height of the convex portion 26. The height of the projection 27 is set to be substantially equal to the depth of the groove 29. Also,
When assembling, the height of the convex portion 26 for making the film into an S-shape is a value obtained by subtracting the height of the convex portion 27 from the thickness of the silicon wafer 15A. For example, the thickness of the silicon wafer 15A is 200 μm, the depth of the groove 29 is 100 μm,
If the heights of 6, 27 are 100 μm and 100 μm, respectively, the stroke in the plane direction of the film becomes 100 μm.

From the above, the depth of the groove 28, the groove 2
By changing the depth 9, the height of the projection 26, and the height of the projection 27, an actuator having an arbitrary stroke can be manufactured.

FIG. 5 is a diagram showing a flow of a first manufacturing method of the upper electrode, which is the first substrate of the actuator, and shows the first substrate silicon wafer 16A on which the convex portions 26 are formed.
FIG. 4 is a process diagram showing a manufacturing procedure of the first embodiment. The embodiments of FIGS. 3 and 4 mainly describe the overall process of the actuator, particularly the preparation of a metal film, and did not mention the details of the formation of the protrusions on the silicon wafer. Here, the details of the method of manufacturing the convex silicon wafer will be described with reference to FIG.

(1B) Formation of an etching mask pattern by the process shown in FIG. First substrate 1A
Silicon oxide films 22A, 22B and 22C as etching mask patterns are formed on both surfaces of a 400 μm thick silicon wafer 16A by thermal oxidation (temperature 1100 ° C.). The silicon oxide film 22A is patterned by photolithography as shown in FIG. The substrate 2A is formed on the silicon oxide film 22A on the wafer surface.
A pattern for forming a hole 30 reaching the electrical contact area 9A is formed. The silicon oxide film on the back surface of the wafer is patterned so as to have partially different thicknesses like a thick portion 22B and a thin portion 22C.

(2B) Formation of holes and projections reaching the electrical contact area by the processes shown in FIGS. 5B to 5C. The silicon oxide film 22A, the silicon oxide film 22B, and the silicon oxide film 22C which are the mask patterns on the both surfaces.
When the silicon wafer 16A is anisotropically etched in a 40% aqueous potassium hydroxide solution (at a temperature of 68 ° C.) based on each of them, first, only the holes 30 reaching the electrical contact area are etched. Next, the lower mask pattern 22C is etched to remove only a thin portion. Again, the silicon wafer 16A is etched in an aqueous potassium hydroxide solution to form a hole reaching the electrical contact area and the projection 26. After that, the silicon oxide film 22A and the silicon oxide film 22B which are the etching mask patterns are removed.

(3B) Creation of an insulating layer and an electric contact area by the process shown in FIG. A silicon oxide film 4A is formed on the surface of the silicon wafer 16A by thermal oxidation. The silicon oxide film 4A electrically insulates the protrusion 26 from an S-shaped film (not shown). The silicon wafer 16A is used for the electrode 5A for driving the S-shaped film. An electric contact area 9B for electrically connecting the electrodes to an electric circuit for driving an external actuator (not shown) is formed in a part of the insulating layer 4A.

FIG. 6 is a diagram showing a flow of a second method of manufacturing the upper electrode, which is the first substrate of the actuator, and shows the silicon wafer 17A, which is the first substrate on which the projections are formed.
FIG. 7 is a process diagram showing another manufacturing procedure. Actually, since the actuators shown in FIGS. 1 to 5 are manufactured by batch processing on silicon wafers, three silicon wafers are joined and then divided into individual actuators by a dicing saw.

In the embodiment shown in FIG. 5, the silicon wafer is exposed at the lower end of the silicon wafer 16A having the convex portion, and the S-shaped film pattern 7 and the upper electrode 5A are connected at the end of the actuator. Close. Therefore, when a high voltage is applied to the electrode 5A in order to drive the S-shaped film at a high speed, the electric field strength at the end becomes large and dielectric breakdown easily occurs. In order to solve the above problem, in the embodiment of FIG. 6, tapered structures are provided at both ends of the surface on the film 7 side of the silicon wafer 17A having a convex portion. By providing the taper, it is possible to increase the withstand voltage at the divided actuator ends, and the film can be moved at high speed by applying a high voltage.

When all the actuators are simultaneously operated in the same phase in the silicon wafer without dividing the actuators formed in the silicon wafer, the tapered structure is not necessary.

The electrostatically actuated microvalve shown in FIG. 2 has a structure in which ports for allowing fluid to flow in and out of the upper and lower electrodes of the microactuator shown in FIGS. 1 and 3 to 6 are added. Therefore, the difference from the method of manufacturing the microactuator is the method of manufacturing the upper and lower electrodes.

FIGS. 7 and 8 are process diagrams showing a method of manufacturing the upper electrode 5A as the first substrate 1B and the lower electrode 5B as the third substrate 3B of the electrostatically driven microvalve shown in FIG. It is. The convex silicon wafer 18 of FIG.
The method of manufacturing A is basically the same as the method of manufacturing the silicon wafer shown in FIGS. The difference is that the port 11A, which is a fluid opening through which fluid enters and exits, is formed together with the hole leading to the electrical contact hole 9A.
The silicon wafer 19A shown in FIG. 8 has a port 11B which is a fluid opening through which a fluid flows in and out by anisotropic etching.

FIG. 9 shows another embodiment of the electrostatically driven microvalve. In the embodiment shown in FIGS. 1 to 8, silicon wafers are used for upper and lower electrodes. Therefore, when a microactuator or microvalve is manufactured on a silicon wafer by batch processing, each actuator on the silicon wafer cannot be electrically driven independently. FIG. 9 shows three silicon substrates (a), (b), and (c) for manufacturing an electrostatically driven microvalve that can be electrically driven independently. The silicon substrate in FIG. 9 shows a part of the valve in the silicon wafer.

FIGS. 9A, 9B, and 9C show an upper electrode wafer as a first substrate, an S-shaped film wafer as a second substrate, and a third substrate, respectively. FIG. 2 shows a plan view of a certain lower electrode wafer. By bonding each of the three wafers in the order of (a), (b), and (c), a microvalve having a configuration as shown in FIGS. 1 to 8 can be manufactured. 9 (a) r and 9 (c) r
Indicates the back surface of the substrate shown in FIGS. 9A and 9C, respectively.

The upper electrode wafer shown in FIG. 9A has a fluid opening 12A and through-holes 10A for extracting electrodes.
0B and 10C, the upper electrode pattern 6A, and the projection 2
6 and an insulating layer (not shown) formed on the electrode pattern. Electrode extraction through holes 10A, 10
B and C are for connecting the S-shaped film and the external drive circuit, the lower electrode pattern and the external drive circuit, and the upper electrode pattern and the external circuit, respectively. FIG.
The S-shaped film wafer of (b) consists of the film 8 held at both ends only by the silicon wafer. FIG.
The lower electrode wafer (c) has an opening 12 for fluid flow through.
B, 12C, a lower electrode pattern 6B, and an insulating layer (not shown) formed on the electrode pattern.

FIG. 9 shows a switching valve for discharging the fluid introduced from the opening 12C for fluid flow through one of the openings 12A and 12B. By changing the shape and number of the fluid openings formed in the upper electrode wafer and the lower electrode wafer, it is possible to realize an on / off valve, a valve for discretely changing the flow rate, and the like. Since a drive electrode pattern is formed on each of the valves formed on the silicon wafer, a plurality of valves can be driven independently.

FIGS. 7 to 9 show the electrostatically driven valve. A pump can be manufactured by combining the electrostatic drive type actuator and the electrostatic drive type valve. For example, an electrostatically driven pump is obtained by connecting two electrostatically driven valves and one electrostatically driven actuator via a channel formed in a silicon substrate. An actuator is formed at the center of the two valves to pump fluid. The two valves act as check valves to allow fluid to flow in one direction.

[0052]

According to the present invention, the bent portion of the film forming the valve body is hard to be cut, and a plurality of valves can be integrated on a silicon substrate. You can get a valve.

[Brief description of the drawings]

FIG. 1 is a sectional view of an electrostatic drive type microactuator according to an embodiment of the present invention.

FIG. 2 is a sectional view of an electrostatic drive type microvalve according to an embodiment of the present invention.

FIG. 3 is a cross-sectional view showing a flow of a first manufacturing method of the electrostatic drive type actuator according to the embodiment of the present invention.

FIG. 4 is a cross-sectional view showing a flow of a second method of manufacturing the electrostatic drive type actuator according to the embodiment of the present invention.

FIG. 5 is a cross-sectional view showing a flow of a first method of manufacturing an upper electrode of the electrostatic drive type actuator according to the embodiment of the present invention.

FIG. 6 is a cross-sectional view showing a flow of a second method of manufacturing the upper electrode of the electrostatic drive type actuator according to the embodiment of the present invention.

FIG. 7 is a cross-sectional view illustrating a flow of a method of manufacturing an upper electrode of the electrostatically driven microvalve according to the embodiment of the present invention.

FIG. 8 is a cross-sectional view showing a flow of a method of manufacturing a lower electrode of the electrostatically driven microvalve according to the embodiment of the present invention.

FIG. 9 is a plan view showing each plate of another example of the electrostatically driven microvalve according to the embodiment of the present invention.

[Explanation of symbols]

1A, 1B First substrate 2A, 2B Second substrate 3A, 3B Third substrate 4, 4A, 4B Insulating layer 5, 5A, 5B Electrode 6A, 6B Electrode 7 Film 8 Film 9A, 9B, 9C Electrical contact Area 10A, 10B, 10C Electrical contact area 11A, 11B Fluid opening 12A, 12B, 12C Fluid opening 13 Valve cavity 14A, 14B, 14C Silicon wafer 15A, 15B, 15C Silicon wafer 16A Silicon wafer 17A Silicon wafer 18A Silicon wafer 19A Silicon wafer 20A, 20B Etching mask pattern 21, 21A, 21B, 21C, 21D Etching mask pattern 22A, 22B, 22C Etching mask pattern 23A, 23B Etching mask pattern 24 A, 24B Etching mask pattern 25A, 25B Etching mask pattern 26 Convex part 27 Convex part 28 Groove part 29 Groove part 30 Hole reaching electrical contact area

Claims (5)

(57) [Claims] A second substrate provided with a metal film having a hollow portion formed on one surface and having a bendable portion in the hollow portion, and a first substrate interposed between insulating layers to form an electrode. , A third substrate, and then laminating the first substrate on the surface provided with the metal film with the second substrate interposed therebetween, and laminating the third substrate on the back surface of the surface. And forming a groove on one surface of the second substrate by etching when forming the metal film on the second substrate. after forming the metal film on the surface, the groove of the hollow portion in the direction of the rear surface of the surface on which the groove is provided
The region corresponding to the region containing
And on the side facing the first substrate, the side facing the second substrate
Forming protruding projections, laminating the first substrate on the second substrate
When the metal film is formed on the third substrate side,
A method for manufacturing an electrostatically driven microactuator , comprising pressing and deforming . 2. The method according to claim 1, wherein at least one turn of the bent portion of the metal film is formed. 3. A second substrate in which a hollow portion is formed and a metal film having a bent portion which is bendable in the hollow portion is provided on one surface, and a first substrate which is sandwiched between insulating layers to form an electrode. , A third substrate, and then laminating the first substrate on the surface provided with the metal film with the second substrate interposed therebetween, and laminating the third substrate on the back surface of the surface. The method of manufacturing an electrostatically driven microvalve comprising:
When forming the metal film on one side of the second substrate,
Forming a groove on the surface by etching, and including the groove
After forming the metal film on the surface, the hollow portion is formed into the groove portion.
From the direction of the back surface of the surface provided with
Forming a region corresponding to the region by etching, and forming a fluid opening portion opened through the hollow portion on each of the first and third substrates by etching. How to make a valve. 4. An electrostatic drive type microvalve using an electrostatic drive type actuator, wherein the electrostatic drive type actuator is manufactured by the method according to claim 1 or 2. An electrostatically driven microvalve characterized by being an actuator. 5. An electrostatically driven microvalve using an electrostatically driven microvalve, wherein the electrostatically driven microvalve according to claim 4, wherein at least two electrostatically driven microvalves are combined. Electrostatic drive pump.