JPH07283668A - High frequency amplifier - Google Patents

Abstract

PURPOSE:To obtain a high frequency amplifier where high gain and a high output operation are possible. CONSTITUTION:In each input transmission line 24, each of two projecting parts 4 projecting from the part of the outer peripheral part of the bending part outward from a planar viewpoint is extended. Each projecting part 4 is grounded via a metallic wire 6 and a capacitor 5. The capacity of the capacitor 5 is set to the capacity in the level which can be neglected from the viewpoint of the high frequency signal inputted in a GaAs FET chip 1. The auxiliary means composed of the metallic wire 6 and the capacitor 5 is composed, and a short terminating line 11 is formed by this auxiliary means and the projecting parts 4. The line length of this short terminating line 11 is set to be shorter than the 1/4 wavelength of the high frequency signal inputted in an input terminal 2. Thus, the phase difference of the high frequency signal to be generated according to the difference of the signal propagation route on the input transmission line is suppressed to a minimum, and high gain and an high output operation is performed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency amplifier for amplifying a high frequency signal such as microwave.

[0002]

2. Description of the Related Art FIG. 12 is a top view showing a structure of a conventional high frequency amplifier. As shown in the figure, the high-frequency amplifier has an input terminal 2 and an output terminal 3, and has a GaA on the substrate 10.
An sFET chip 1, an input matching circuit 20, and an output matching circuit 30 are formed.

In the input matching circuit 20, one input matching substrate 21 and two input matching substrates 22 are formed on the substrate 10, an input transmission line 23 is formed on the input matching substrate 21, and each input matching substrate 22 is formed. Input transmission lines 24 are respectively formed on the upper side. The input matching substrate 21 has a dielectric constant of 38 and a thickness of 0.1 mm, and the input matching substrate 22 has a dielectric constant of 38 and a thickness of 0.18 mm.

The tip portion 23a of the input transmission line 23 is connected to the input terminal 2 via the gold wire 16, and the input transmission line 2
3 and each input transmission line 24 are electrically connected by a gold wire 6. Then, each input transmission line 24 is connected to the input portion of each of the two GaAsFET chips 1 via the gold wire 6 to provide a total of four GaA.
The sFET chip 1 is electrically connected to the input section of each.

On the other hand, in the output matching circuit 30, the substrate 1
Two output matching boards 31 and one output matching board 3 on the 0.
2 is formed, and the output transmission line 3 is formed on each output matching substrate 31.
3 are respectively formed, and the output transmission line 34 is formed on the output matching substrate 32. The output matching substrate 31 has a dielectric constant of 38 and a thickness of 0.18 mm, and the output matching substrate 32 is an alumina substrate having a thickness of 0.2 mm.

Each output transmission line 33 is electrically connected to the respective output portions of the four GaAsFET chips 1 by being connected to the output portions of the two GaAsFET chips 1 via the gold wires 6. The output transmission lines 33 and the output transmission lines 34 are electrically connected by the gold wires 6. Then, the tip portion 34 a of the output transmission line 34 is connected to the output terminal 3.

Each GaAsFET chip 1 has a total gate width of 18.9 mm, and a high frequency signal such as a microwave applied to the input terminal 2 is input in parallel via the input matching circuit 20 and is output by the output matching circuit 30. Is synthesized. Therefore, the signal obtained from the output terminal 3 is a composite signal of the high frequency amplified signals which are the outputs of the four GaAsFET chips 1, respectively, so that the amplified signal has a higher output.

Input matching circuit 20 and output matching circuit 30
Respectively, the line length is set to ¼ wavelength of the high frequency signal. Here, the input and output impedances of the input terminal 2 and the output terminal 3, respectively, are 50Ω, and GaAsF
The input and output impedances of the input section and the output section of the ET chip 1 are 1Ω.

Therefore, the input transmission line 23 is formed by bending both ends while forming the line width relatively narrow and substantially uniform, and the input transmission line 24 goes from the input terminal 2 to the input portion of the GaAsFET chip 1. Impedance matching between the input terminal 2 and the input portion of the GaAsFET chip 1 is achieved by forming the planar shape gradually widening while curving toward the input signal propagation direction and making the formation width relatively large. Then, the end region of the input transmission line 24 having the maximum line width and the input part of each GaAsFET chip 1 are electrically connected via the gold wire 6. Each Ga
Each of the AsFET chips 1 has a plurality of input parts, and there are an input part connected to a region near the outer periphery of the input transmission line 24 and an input part connected to an inner region of the input transmission line 24.

Similarly, the output transmission line 34 is formed to be relatively narrow and substantially uniform while bending both ends thereof, and the input transmission line 33 is formed from the output terminal 3 to the GaAsFE.
The output terminal 3 and the GaAs are formed by forming the output terminal 3 and the GaAs with a relatively wide width by curving the planar shape toward the output portion of the T-chip 1 in the opposite direction while curving the planar shape.
Impedance matching with the output of the FET chip 1 is achieved. Then, the end portion region of the output transmission line 33 having the maximum line width and the output portion of each GaAsFET chip 1 are electrically connected via the gold wire 6. Each GaAs FET chip 1 has a plurality of output sections, and the output transmission line 3
3, the output section and the output transmission line 3 connected to the outer peripheral region of
There is an output connected to the inner region of 3.

As shown in FIG. 12, the reason why the input transmission line 24 and the output transmission line 33 are curved is to efficiently form the input transmission line 24 and the output transmission line 33 in the substrate 10 so as to fit them in a specified package capacitance. The input transmission line 24 and the output transmission line 33 may be bent in a bend shape.

[0012]

However, when the line width of the input transmission line 24 is widened, the vicinity high frequency signal SH1 (see FIG. 12) flowing near the outer circumference of the input transmission line 24 and There is a risk of causing a phase difference with the high frequency signal SH2 (see FIG. 12) near the inner circumference flowing near the circumference.

FIG. 13 is a graph showing the frequency characteristic of the high frequency signal passing through the input transmission line 24. This graph shows that good results were obtained in the design of small signals (signals with small amplitude) of high-frequency signals (microwaves) of 3.7 to 4.2 GHz. In the figure, the solid line indicates the high frequency signal SH2 near the inner circumference, and the broken line indicates the high frequency signal S near the outer circumference.
H1 is shown.

As shown in the figure, the frequency is 3.7 GHz.
As the frequency becomes larger, the phase of the outer-peripheral-neighborhood high-frequency signal SH1 gradually lags behind the inner-peripheral-neighborhood high-frequency signal SH2.
There is a phase difference of 10 between H1 and the high frequency signal SH2 near the inner circumference.
It exceeds ゜.

When the phase difference between the outer peripheral high frequency signal SH1 and the inner peripheral high frequency signal SH2 becomes large, GaAsFE
Since a plurality of high frequency signals having a phase difference are respectively input to the plurality of input parts of the T chip 1,
The power is not uniformly amplified in the GaAsFET chip 1,
There was a problem that it caused a decrease in power gain and output power.

The conventional high-frequency amplifier is configured as described above, and the line width of the input transmission line of the input matching circuit for impedance matching is formed to be relatively large.
Since a plurality of high-frequency signals having different phases are input to the plurality of input sections of the amplification section, power amplification of the amplification section is not ideally performed, and there is a problem that power gain and output power are reduced.

The present invention has been made to solve the above problems, and an object thereof is to obtain a high frequency amplifier capable of high gain and high output operation.

[0018]

A high frequency amplifier according to a first aspect of the present invention has an input terminal for receiving a high frequency signal of a predetermined frequency and a plurality of input sections, and is provided to the plurality of input sections. An amplifier that amplifies the respective signals, and is electrically interposed between the input terminal and the plurality of input sections of the amplifier, and the impedance of the input terminal side and the input impedance of the amplifier section An input matching circuit for matching, wherein the input matching circuit includes an input transmission line having a planar shape that gradually expands in an input signal propagation direction from the input terminal to the input unit, The line has a projecting portion formed by projecting outward from a part of the outer circumference of the line, and is electrically connected to the projecting part together with the projecting part for the high frequency signal flowing near the outer circumference of the input transmission line. versus Further comprising constructed induction aid which exhibits inducible.

Preferably, as in the high frequency amplifier according to claim 2, one end of the induction assisting device is electrically connected to the protrusion and the other end is grounded to form a short-circuit termination line together with the protrusion. The auxiliary line may include a capacitor having a capacitance that can be ignored from the high frequency signal, and the line length of the short-circuit termination line may be set shorter than a quarter wavelength of the high frequency signal.

Preferably, as in the high frequency amplifier according to claim 3, one end of the induction assisting device is electrically connected to the projecting portion and the other end thereof is open to form an open termination line together with the projecting portion. 1 to make the line length of the open-ended line longer than 1/4 wavelength of the high-frequency signal.
It may be set shorter than / 2 wavelength.

More preferably, as in the high frequency amplifier according to claim 4, the input transmission line and the open termination line of the input matching circuit may be formed in a multilayer structure.

Further, in the high frequency amplifier according to the present invention, the amplification section further has a plurality of output sections for outputting the amplified high frequency amplified signal, and an output terminal, the output terminal and the plurality of the amplification sections. An output matching circuit that is electrically inserted between the output unit and matches the impedance on the output terminal side and the output impedance on the amplifying unit side, and the output matching circuit is provided from the output terminal. An output transmission line having a plane shape gradually expanding in a reverse direction of the output signal propagation to reach the output unit is provided, and the output transmission line is a second protrusion formed to protrude outward from a part of an outer periphery thereof. And a second induction assisting means that has a portion and is electrically connected to the second protrusion and that exhibits an inductive property with respect to the high-frequency amplified signal together with the protrusion.

Preferably, as in the high frequency amplifier according to claim 6, one end of the second induction assisting device is electrically connected to the projecting portion and the other end is grounded, and the second projecting portion is formed. And a second auxiliary line that forms a second short-circuit terminating line, the second auxiliary line including a second capacitor having a capacitance that can be ignored from the high-frequency amplified signal, and the second short-circuit terminating line. The line length of the line may be set shorter than a quarter wavelength of the high frequency amplified signal.

Preferably, as in the high frequency amplifier according to claim 7, one end of the second induction assisting device is the second induction assisting device.
A second auxiliary line that is electrically connected to the projecting part and is open at the other end to form an open terminating line together with the second projecting part. It may be set longer than ¼ wavelength and shorter than ½ wavelength.

More preferably, as in the high frequency amplifier according to claim 8, the amplification section is composed of a plurality of amplification elements each having at least one input section and one output section.

[0026]

According to the present invention, the input transmission line of the input matching circuit of the high-frequency amplifier according to the present invention has a projecting portion formed by projecting outward from a part of the outer periphery thereof, and the projecting portion is electrically connected. It is provided with a guidance assisting device connected thereto.

Then, by the protruding portion and the guide assisting means,
High-frequency signal that flows near the outer circumference of the input transmission line (hereinafter,
The electric field of the high frequency signal in the vicinity of the outer circumference can be changed by exhibiting the inductive property to the “high frequency signal in the vicinity of the outer circumference”.

Further, the high frequency amplifier according to the present invention comprises, as the induction assisting means, an auxiliary line having one end electrically connected to the projecting portion and the other end grounded to form a short-circuit termination line together with the projecting portion. The auxiliary line includes a capacitor having a capacity that can be ignored from the high frequency signal, and the line length of the short-circuit termination line is set to be shorter than a quarter wavelength of the high frequency signal.

Therefore, the line length is 1/4 of the high frequency signal.
The short-circuit terminating line shorter than the wavelength exhibits the inductive property with respect to the high-frequency signal near the outer circumference, so that the electric field of the high-frequency signal near the outer circumference can be changed.

In addition, the capacitor inserted in the short-circuit terminating line can surely avoid the problem that the DC components of the plurality of input sections of the amplification section are set to the ground level, and the amplification operation of the amplification section. It does not adversely affect.

Further, the high frequency amplifier according to claim 3 comprises, as the induction assisting means, an auxiliary line which is electrically connected to the projecting portion at one end and is open at the other end to form an open termination line together with the projecting portion. The line length of the open-ended line is set to be longer than 1/4 wavelength and shorter than 1/2 wavelength of the high frequency signal.

Therefore, the line length is 1/4 of the high frequency signal.
The electric field of the high frequency signal in the vicinity of the outer circumference can be changed by exhibiting the inductive property to the high frequency signal in the vicinity of the outer circumference by the open termination line longer than the wavelength and shorter than 1/2 wavelength.

Further, the high frequency amplifier according to claim 4 is:
By forming the input transmission line and the open termination line of the input matching circuit with a multilayer structure, the open termination line can be formed without deteriorating the degree of integration.

According to a fifth aspect of the present invention, the output transmission line of the output matching circuit of the high-frequency amplifier according to the fifth aspect has a second projecting portion formed to project outward from a part of the outer periphery of the output transmission line. It further comprises a second guide assist means electrically connected to the protrusion.

The second projecting portion and the second guidance assisting means exhibit the inductive property with respect to the high frequency amplified signal flowing in the vicinity of the outer circumference of the output transmission line (hereinafter abbreviated as "outer circumference near high frequency amplified signal"). As a result, the electric field of the high frequency amplified signal near the outer circumference can be changed.

Further, in the high frequency amplifier of the sixth aspect, as the second induction assisting means, one end is electrically connected to the second projecting portion and the other end is grounded, and the high frequency amplifier is provided with the second projecting portion. A second auxiliary line forming a short-circuit terminating line of No. 2 is provided, and the second auxiliary line includes a second capacitor having a capacitance that can be ignored from a high frequency amplified signal, and includes the line length of the second short-circuit terminating line. It is set shorter than a quarter wavelength of the high frequency amplified signal.

Therefore, the line length is 1 of the high frequency amplified signal.
The second short-circuit terminating line shorter than / 4 wavelength exhibits the inductive property with respect to the high-frequency amplified signal in the vicinity of the outer circumference, whereby the electric field of the high-frequency amplified signal in the vicinity of the outer circumference can be changed.

In addition, the second capacitor inserted in the second short-circuit terminating line can surely avoid the problem that the DC components of the plurality of output sections of the amplification section are set to the ground level. It does not adversely affect the high frequency amplified signal.

Further, in the high frequency amplifier according to the seventh aspect, as the second induction assisting means, one end is electrically connected to the second projecting portion and the other end is opened, and the second projecting portion together with the second projecting portion. A second auxiliary line that forms two open termination lines is provided, and the line length of the second open termination line is set to 1 of the high frequency amplified signal.
It is set to be longer than / 4 wavelength and shorter than 1/2 wavelength.

Therefore, the line length is 1 of the high frequency amplified signal.
The second open-ended line longer than / 4 wavelength and shorter than 1/2 wavelength exerts inductive property on the high-frequency amplified signal in the vicinity of the outer circumference, thereby changing the electric field of the high-frequency amplified signal in the vicinity of the outer circumference.

Further, since the amplifying section of the high frequency amplifier according to the present invention comprises a plurality of amplifying elements having at least one input section and at least one output section, at least one output section of each of the plurality of amplifying elements is output. Since the high frequency amplified signal is combined on the output terminal via the output matching circuit, a higher output high frequency amplified signal can be obtained from the output terminal.

[0042]

【Example】

<First Embodiment> FIG. 1 is a top view showing the structure of a high-frequency amplifier according to a first embodiment of the present invention, and FIG.
FIG. As shown in these figures, the high frequency amplifier has an input terminal 2 and an output terminal 3, and is a GaA amplification element on a metallic substrate 10 set to a ground level.
An sFET chip 1, an input matching circuit 20, and an output matching circuit 30 are formed.

In the input matching circuit 20, the input matching substrate 21 is formed on the substrate 10 with the lower electrode 25 interposed therebetween.
Two input matching substrates 22 are respectively formed through one lower electrode 26, an input transmission line 23 is formed on the input matching substrate 21, and an input transmission line 24 is formed on each input matching substrate 22. The input matching substrate 21 has a dielectric constant of 38 and a thickness of 0.1 mm.
2 has a dielectric constant of 38 and a thickness of 0.18 mm.

As in the conventional case, the input transmission line 23 is formed by bending both ends while forming the line width relatively narrow and substantially uniform, and the input transmission line 24 is input from the input terminal 2 to the input of the GaAsFET chip 1. The input terminal 2 and the input portion of the GaAsFET chip 1 are impedance-matched by forming the shape gradually widening while curving the planar shape toward the input signal propagation direction toward the portion to make the formation width relatively large. . The input transmission line 24
An end region having the maximum line width on the GaAsFET chip 1 side is electrically connected to each of a plurality of input parts of each GaAsFET chip 1 via a gold wire 6. Each GaA
Each of the sFET chips 1 has a plurality of input parts, and there are an input part connected to the peripheral region of the input transmission line 24 and an input part connected to the inner region of the input transmission line 24.

In each input transmission line 24, two projecting portions 4 are provided so as to project outward in a plan view from a part of the outer circumference of the curved portion. Each protrusion 4 has a forming width W1 in the outer peripheral direction and a forming length L1 in the protruding direction, and is connected to the capacitor 5 via a gold wire 6. As shown in FIG. 2, the capacitor 5 includes an upper electrode 51, a lower electrode 52 and a dielectric 5
3, the upper electrode 51 of the capacitor 5 is electrically connected to the projecting portion 4 via the gold wire 6, and the lower electrode 52 is formed on the substrate 10. And the ground level. The capacitance of the capacitor 5 is the GaAsFET chip 1
The capacitance is set to a level that can be ignored when viewed from the high-frequency signal input to.

Thus, the auxiliary means consisting of the gold wire 6 for electrically connecting the capacitor 5 and the protruding portion 4 and the capacitor 5 is constituted, and the auxiliary means and the protruding portion 4 form the short-circuit termination line 11. is doing. Then, the line length of the short-circuit termination line 11 is set to be shorter than a quarter wavelength of the high frequency signal input to the input terminal 2. The line length of the short-circuit terminating line 11 means the formation length L1 of the protruding portion 4,
It is the total length of the auxiliary means.

The tip portion 23a of the input transmission line 23 is connected to the input terminal 2 via the gold wire 16. The input transmission line 23 and each input transmission line 24 are electrically connected by the gold wire 6. Then, each input transmission line 24 is connected to the plurality of input portions of the two GaAsFET chips 1 via the gold wires 6, so that the input terminal 2 is electrically connected to the input portions of the four GaAsFET chips 1 in total. Connected.

On the other hand, in the output matching circuit 30, the substrate 1
0, two output matching substrates 31 are formed via two lower electrodes 35, an output matching substrate 32 is formed via lower electrodes 36, and an output transmission line 33 is formed on each output matching substrate 31. Then, the output transmission line 34 is formed on the output matching substrate 32. The output matching board 3
1 has a dielectric constant of 38 and a thickness of 0.18 mm, the output matching substrate 32 is an alumina substrate, and the thickness is 0.2 mm.

Similarly to the conventional case, the output transmission line 34 is formed relatively narrow and substantially uniform while bending both ends thereof, and the input transmission line 33 is formed from the output terminal 3 to G.
The output terminal 3 of the aAsFET chip 1 is formed in a progressively widened shape while curving the planar shape toward the opposite direction of the output signal propagation toward the output portion, and the formation width is made relatively wide.
And the impedance of the output part of the GaAsFET chip 1 are matched. Then, the GaA of the output transmission line 33
An end region having the maximum line width on the sFET chip 1 side and each of the plurality of output parts of each GaAsFET chip 1 are electrically connected via a gold wire 6. Each GaAsFE
Each of the T-chips 1 has a plurality of output parts, and there are an output part connected to a region near the outer periphery of the output transmission line 33 and an output part connected to an inner region of the output transmission line 33.

Each output transmission line 33 is electrically connected to the output parts of the four GaAsFET chips 1 in total by being connected to the output parts of the two GaAsFET chips 1 via the gold wires 6. The output transmission lines 33 and the output transmission lines 34 are electrically connected by the gold wires 6. Then, by connecting the tip end portion 34 a of the output transmission line 34 to the output terminal 3 via the gold wire 16,
The output terminal 3 is electrically connected to the output section of each of the four GaAsFET chips 1.

Each GaAsFET chip 1 has a total gate width of 18.9 mm, and a high-frequency signal such as a microwave applied to the input terminal 2 is input in parallel via the input matching circuit 20, and each GaAsFET chip 1 receives the high-frequency signal. The high frequency amplified signals output in parallel are combined by the output matching circuit 30. Therefore, the signal obtained from the output terminal 3 is a composite signal of the high frequency amplified signals which are the outputs of the four GaAsFET chips 1, respectively, so that the amplified signal has a higher output.

FIG. 3 is a graph showing the frequency characteristic of the high frequency signal passing through the input transmission line 24. This graph is a small signal (small amplitude signal) design of a high frequency signal (microwave) of 3.7 to 4.2 GHz. At this time, the formation width W24 of the input transmission line 24 facing one GaAsFET chip 1, the formation width W1 and the formation length L of the protrusion 4 are formed.
The ratio with 1 (W24: W1: L1) is 4: 1: 1.
In the figure, the solid line indicates the inner-periphery vicinity high-frequency signal SH2 and the broken line indicates the outer-periphery vicinity high-frequency signal SH1.

As shown in the figure, 3.7 to 4.2 GHz
It can be seen that the maximum phase difference between the outer peripheral high frequency signal SH1 and the inner peripheral high frequency signal SH2 is suppressed to 10 ° or less in the frequency band of. That is, the formation length L of the protrusion 4
It can be seen that the phase difference between the outer peripheral vicinity high frequency signal SH1 and the inner peripheral vicinity high frequency signal SH2 is made small by setting 1 and the formation width W1 to appropriate values.

In this way, the phase difference between the high frequency signal SH1 in the vicinity of the outer circumference and the high frequency signal SH2 in the vicinity of the inner circumference becomes small because the line length of the input transmission line 24 is the short-circuit termination line having a line length of 1/4 wavelength or less of the high frequency signal. This is because the short-circuit terminating line exerts inductivity on the outer-periphery high-frequency signal SH1 and changes the electric field of the outer-periphery high-frequency signal SH1 by providing it on the outer peripheral portion.

As a result, in the high frequency amplifier of the first embodiment, the formation length L1 and the formation width W1 of the protrusion 4 are appropriately set, and the outer circumference vicinity high frequency signal SH1 and the inner circumference vicinity high frequency signal S are generated.
By minimizing the phase difference with H2, each GaA
Since the power can be uniformly amplified in the sFET chip 1, high gain and high output operation can be performed.

If the input part of the GaAsFET chip 1 is simply grounded by the short-circuit termination line 11, GaA
The DC bias applied to the sFET chip 1 is set to the ground level by the short-circuit termination line 11, and
There is a risk that the FET chip 1 is not accurately biased and does not operate normally.

However, by inserting the capacitor 5 in the short-circuit terminating line 11, it is possible to surely avoid the problem that the DC bias applied to the GaAsFET chip 1 is set to the ground level by the short-circuit terminating line 11. , GaAsFET chip 1 can be accurately DC biased, so GaAsFET chip 1
Can work normally.

<Second Embodiment> FIG. 4 is a top view showing the configuration of a high frequency amplifier according to a second embodiment of the present invention.
FIG. 5 is a BB sectional view thereof. As shown in these drawings, similarly to the first embodiment, each input transmission line 24 is provided with two projecting portions 4 projecting outward from a part of the outer circumference of the curved portion in plan view. Each protruding portion 4 has a forming width W1 in the outer peripheral direction and a forming length L1 in the protruding direction, and is electrically connected to one end of the auxiliary line 7 via a gold wire 6, respectively.

The auxiliary line 7 is formed on an empty area on the input matching substrate 21 where the input transmission line 23 is not formed, and the other end is open. The gold wire 6 and the auxiliary line 7 that connect the protruding portion 4 and the auxiliary line 7 together form an auxiliary means, and the auxiliary means and the protruding portion 4 form an open termination line 12. And this open termination line 12
The line length of 1/4 of the high frequency signal input to the input terminal 2
It is set to be longer than the wavelength and shorter than 1/2 wavelength. The line length of the open termination line 12 is the total length of the formation length L1 of the protrusion 4 and the line length of the auxiliary means.

The input transmission line 23 is the input transmission line 2
4 is formed on the input terminal 2 side with respect to 4, and a relatively high-impedance line may be used, and there is no problem even if the line width is narrowed. Therefore, a large formation area is not required as compared with the input transmission line 24. . Therefore, in the empty area on the input matching substrate 21, the line length of the open termination line is 1/4 of the high frequency signal.
It is sufficiently possible to form four auxiliary lines 7 having a line length longer than the wavelength.

The rest of the configuration is the same as that of the high frequency amplifier of the first embodiment except that the capacitor 5 is not present, and therefore its explanation is omitted.

In the high frequency amplifier of the second embodiment having such a configuration, the line length is longer than 1/4 wavelength of the high frequency signal and 1 /.
Open transmission line 12 shorter than two wavelengths is input transmission line 24
As in the case of the first embodiment, the open-ended line exerts inductive property to the high frequency signal SH1 in the vicinity of the outer periphery, and changes the electric field of the high frequency signal SH1 in the vicinity of the outer periphery.

As a result, in the high frequency amplifier of the second embodiment, the outer peripheral vicinity high frequency signal SH1 and the inner peripheral vicinity high frequency signal S are set by appropriately setting the formation length L1 and the formation width W1 of the protruding portion 4.
By minimizing the phase difference with H2, each GaA
Since the power can be uniformly amplified in the sFET chip 1, high gain and high output operation can be performed.

Further, as a matter of course, since the open termination line is not electrically connected to the ground level, GaAsF
There is no problem that the DC bias applied to the ET chip 1 is set to the ground level by the open termination line.
Therefore, the DC bias can be applied to the GaAsFET chip 1 accurately, and the GaAsFET chip 1 can operate normally.

From the above consideration, when the high frequency amplifier of the second embodiment and the high frequency amplifier of the first embodiment are compared, the second embodiment does not need to form the capacitor 5, and Since the number of products can be reduced and the number of steps can be reduced, the manufacturing cost can be reduced.

<Third Embodiment> FIG. 6 is a top view showing the structure of a high frequency amplifier according to a third embodiment of the present invention.
FIG. 7 is a sectional view taken along the line CC. As shown in these drawings, as in the first and second embodiments, each input transmission line 24 is provided with two projecting portions 4 projecting outward from a part of the outer circumference of the curved portion in plan view. To be done. Each protruding portion 4 has a forming width W1 in the outer peripheral direction and a forming length L1 in the protruding direction, and is electrically connected to one end of the auxiliary line 7 via a gold wire 6, respectively.

On the other hand, the auxiliary substrate 27 which is a dielectric is formed on the input matching substrate 21 including a part of the input transmission line 23, and the auxiliary line 7 is formed on the auxiliary substrate 27. That is, the lower electrode 26, the input transmission line 23, and the auxiliary line 7
Is configured in a triplate shape. Then, another part of the input transmission line 23 on which the auxiliary substrate 27 is not formed is electrically connected to the input transmission line 24 via the gold wire 6.

When the other end of the auxiliary line 7 is opened, an auxiliary means is constituted by the gold wire 6 and the auxiliary line 7 which connect the protruding portion 4 and the auxiliary line 7, and the auxiliary means and the protruding portion 4 form the auxiliary means. , The open termination line 12 is formed. Then, the line length of the open termination line 12 is set to be longer than ¼ wavelength and shorter than ½ wavelength of the high-frequency signal input to the input terminal 2.

At this time, since only the auxiliary line 7 can be formed on the auxiliary substrate 27, it is necessary to form four auxiliary lines 7 in which the line length of the open termination line 12 is longer than the quarter wavelength of the high frequency signal. Can be done easily.

The rest of the configuration is the same as that of the high frequency amplifier of the second embodiment, and the explanation is omitted.

In the high frequency amplifier of the second embodiment having such a structure, the line length is longer than 1/4 wavelength of the high frequency signal and is 1 /
Open transmission line 12 shorter than two wavelengths is input transmission line 24
By providing it on the outer peripheral portion of, the open termination line 12 exerts the inductive property with respect to the high frequency signal SH1 near the outer periphery and changes the electric field of the high frequency signal SH1 near the outer periphery, as in the first and second embodiments.

As a result, in the high frequency amplifier of the third embodiment, the outer peripheral vicinity high frequency signal SH1 and the inner peripheral vicinity high frequency signal S are set by appropriately setting the formation length L1 and the formation width W1 of the protruding portion 4.
By minimizing the phase difference with H2, each GaA
Since the power can be uniformly amplified in the sFET chip 1, high gain and high output operation can be performed.

Further, as in the second embodiment, GaAs FET
There is no problem that the DC bias applied to the chip 1 is set to the ground level by the open termination line.
Since the DC bias can be applied to the AsFET chip 1 accurately, the GaAsFET chip 1 can operate normally.

Therefore, when the high-frequency amplifier of the third embodiment and the high-frequency amplifier of the first embodiment are compared, the third embodiment does not need to form the capacitor 5, so that the number of parts is reduced. It is possible to reduce the number of manufacturing steps, and it is possible to reduce the manufacturing cost by reducing the number of steps.

The high frequency amplifier of the third embodiment and the second
When compared with the high-frequency amplifier of the third embodiment, the third embodiment can easily form the auxiliary line 7 for realizing the open termination line 12 having the line length of ¼ wavelength or more of the high-frequency signal. There is an advantage that can be.

In the example of FIGS. 6 and 7, the auxiliary line 7
Was formed on the uppermost layer and the input transmission line 23 was formed on the intermediate layer. The input transmission line 23 was formed on the uppermost layer.
Of course, the auxiliary line 7 may be formed in the intermediate layer.

<Fourth Embodiment> FIG. 8 is a top view showing the structure of a high frequency amplifier according to a fourth embodiment of the present invention.
FIG. 9 is a sectional view taken along the line D-D. As shown in these drawings, each of the output transmission lines 33 is provided with two projecting portions 40 that project outwardly in a plan view from a part of the outer circumference of the curved portion. Each protrusion 40 has a forming width W in the outer peripheral direction.
1. It has a formation length L1 in the protruding direction and is connected to the capacitor 5 via the gold wire 6. As shown in FIG. 9, the capacitor 5 includes an upper electrode 51, a lower electrode 52, and a dielectric 53.
The upper electrode 51 of the capacitor 5 is electrically connected to the protrusion 40 via the gold wire 6, and the lower electrode 52 is formed on the substrate 10, so that the capacitor 5 is connected to the protrusion 40. It is inserted to the ground level.
The capacity of the capacitor 5 is set to a level that can be ignored when viewed from the high frequency amplified signal output from the GaAsFET chip 1.

As described above, the gold wire 6 for electrically connecting the capacitor 5 and the protruding portion 40 and the capacitor 5 constitute an auxiliary means, and the auxiliary means and the protruding portion 40 form the short-circuit termination line 13. ing. Then, the line length of the short-circuit termination line 13 is set to be shorter than a quarter wavelength of the high frequency amplified signal output from the output terminal 3. The rest of the configuration is the same as that of the high frequency amplifier according to the first embodiment, and the description is omitted.

In the high frequency amplifier of the fourth embodiment having such a configuration, the output transmission is performed by providing the short-circuit termination line 13 having a line length of ¼ wavelength or less of the high frequency amplified signal on the outer periphery of the output transmission line 33. GaA flowing near the outer circumference of the line 33
The short-circuit terminating line 13 exhibits inductive properties with respect to the high-frequency amplified signal SH3 near the outer periphery, which is the high-frequency amplified signal of the sFET chip 1, and changes the electric field of the high-frequency amplified signal SH3 near the outer periphery.

As a result, in the high frequency amplifier of the fourth embodiment, in addition to the effect similar to that of the first embodiment capable of high gain and high output operation, the formation length L2 and the formation width W2 of the protrusion 40 are formed.
Is set appropriately to minimize the phase difference between the outer peripheral high frequency amplified signal SH3 and the inner peripheral high frequency amplified signal SH4, and thereby a signal synthesized in an ideal state is output terminal 3
Since the output signal can be output to the output terminal, a high-quality output signal can be output from the output terminal 3.

If the output section of the GaAsFET chip 1 is simply grounded by the short-circuit termination line 13, GaA
The output part of the sFET chip 1 is set to the ground level by the short-circuit termination line 13, and the GaAsFET chip 1
There is a risk of adversely affecting the high frequency amplified signal output from the.

However, by inserting the capacitor 5 in the short-circuit termination line 13, it is possible to surely avoid the problem that the output of the GaAsFET chip 1 is set to the ground level, so that the high frequency amplified signal has a bad influence. I will not receive it.

In the configuration shown in FIGS. 8 and 9, the configuration on the input matching circuit 20 side is the same as that of the first embodiment, but the input of the second or third embodiment is changed. The configuration may be the same as the configuration on the matching circuit 20 side. In this case, of course, the same effects as those of the second or third embodiment can be obtained.

<Fifth Embodiment> FIG. 10 shows the fifth embodiment of the present invention.
11 is a top view showing the configuration of the high-frequency amplifier which is the embodiment of FIG. 11, and FIG. 11 is a sectional view taken along line EE thereof. As shown in these drawings, each of the output transmission lines 33 is provided with two projecting portions 40 that project outwardly in a plan view from a part of the outer circumference of the curved portion. Each protruding portion 40 has a forming width W2 in the outer peripheral direction and a forming length L2 in the protruding direction, and is electrically connected to one end of the auxiliary line 41 via the gold wire 6.

The auxiliary line 41 is formed on an empty area on the output matching substrate 32 where the output transmission line 34 is not formed,
The other end is open. Then, the gold wire 16 and the auxiliary line 41 for coupling the protruding portion 40 and the auxiliary line 41 together constitute an auxiliary means, and the auxiliary means and the protruding portion 40 form
The open termination line 14 is formed. The line length of the open termination line 14 is longer than 1/4 wavelength of the high frequency amplified signal output from the output part of the GaAsFET chip 1 by 1
Set to be shorter than / 2 wavelength.

The output transmission line 34 is the output transmission line 3
3 is formed on the output terminal 3 side with respect to 3, and a line having a relatively high impedance may be used, and there is no problem even if the line width is reduced, so that a large formation area is not required. Therefore, the open termination line 14 is provided in the empty area on the output matching substrate 32.
It is sufficiently possible to form four auxiliary lines 41 having a line length whose line length is longer than ¼ wavelength of the high frequency amplified signal. The rest of the configuration is the same as that of the high frequency amplifier of the second embodiment, so the explanation is omitted.

In the high frequency amplifier of the fifth embodiment having such a configuration, the line length is longer than 1/4 wavelength of the high frequency signal and 1 /.
By providing an open termination line shorter than two wavelengths on the outer peripheral portion of the output transmission line 33, the open termination line exerts an inductive property with respect to the high-frequency amplified signal SH3 in the vicinity of the outer periphery, as in the fourth embodiment. The electric field of the signal SH3 is changed.

As a result, in the high frequency amplifier of the fifth embodiment, in addition to the same effect as the second embodiment capable of high gain and high output operation, the formation length L2 and the formation width W2 of the protrusion 40 are obtained.
Is set appropriately to minimize the phase difference between the outer peripheral high frequency amplified signal SH3 and the inner peripheral high frequency amplified signal SH4, and thereby a signal synthesized in an ideal state is output terminal 3
Since the output signal can be output to the output terminal 3, a high gain output signal can be output from the output terminal 3.

In the configuration shown in FIGS. 10 and 11, the input matching circuit 20 side has the same configuration as that of the second embodiment, but the input of the first embodiment or the third embodiment is changed. The configuration may be the same as the configuration on the matching circuit 20 side. In this case, of course, the same effects as those of the first or third embodiment can be obtained.

[0090]

According to the present invention, the input transmission line of the input matching circuit of the high-frequency amplifier according to the present invention has a projecting portion formed by projecting outward from a part of the outer periphery thereof, and the projecting portion is electrically connected. A guide auxiliary means that is electrically connected is provided.

Then, by the protruding portion and the guide assisting means,
High-frequency signal that flows near the outer circumference of the input transmission line (hereinafter,
The electric field of the high frequency signal in the vicinity of the outer circumference can be changed by exhibiting the inductive property to the “high frequency signal in the vicinity of the outer circumference”.

As a result, in the high frequency amplifier according to the first aspect, the phase difference of the high frequency signal caused by the difference of the signal propagation paths on the input transmission line is advanced by advancing the phase of the high frequency signal in the vicinity of the outer circumference, which tends to be delayed. Since it can be input to each of the plurality of input sections of the amplification section while being kept to a minimum, high gain and high output operation can be performed.

Further, the high frequency amplifier according to the present invention comprises, as the induction assisting means, an auxiliary line which is electrically connected to the projecting portion at one end and grounded at the other end to form a short-circuit termination line together with the projecting portion. The auxiliary line includes a capacitor having a capacity that can be ignored from the high frequency signal, and the line length of the short-circuit termination line is set to be shorter than a quarter wavelength of the high frequency signal.

Therefore, the line length is 1/4 of the high frequency signal.
The short-circuit terminating line shorter than the wavelength exhibits the inductive property with respect to the high-frequency signal near the outer circumference, so that the electric field of the high-frequency signal near the outer circumference can be changed.

As a result, in the high frequency amplifier according to the second aspect, the phase difference of the high frequency signal caused by the difference of the signal propagation paths on the input transmission line is caused by advancing the phase of the high frequency signal in the vicinity of the outer periphery, which tends to be delayed in phase. Since it can be input to each of the plurality of input sections of the amplification section while being kept to a minimum, high gain and high output operation can be performed.

In addition, the capacitor inserted in the short-circuit termination line can surely avoid the problem that the DC components of the plurality of input sections of the amplification section are set to the ground level, and the amplification operation of the amplification section. It does not adversely affect.

Further, the high frequency amplifier according to the present invention comprises, as the induction assisting means, an auxiliary line which is electrically connected to the projecting portion at one end and is open at the other end to form an open termination line together with the projecting portion. The line length of the open-ended line is set to be longer than 1/4 wavelength and shorter than 1/2 wavelength of the high frequency signal.

Therefore, the line length is 1/4 of the high frequency signal.
The electric field of the high frequency signal in the vicinity of the outer circumference can be changed by exhibiting the inductive property to the high frequency signal in the vicinity of the outer circumference by the open termination line longer than the wavelength and shorter than 1/2 wavelength.

As a result, in the high frequency amplifier according to the present invention, the phase difference of the high frequency signal caused by the difference of the signal propagation path on the input transmission line is advanced by advancing the phase of the high frequency signal in the vicinity of the outer circumference, which tends to be delayed in phase. Since it can be input to each of the plurality of input sections of the amplification section while being kept to a minimum, high gain and high output operation can be performed.

Further, the high frequency amplifier according to claim 4 is
By forming the input transmission line and the open termination line of the input matching circuit with a multilayer structure, the open termination line can be formed without deteriorating the degree of integration.

According to a fifth aspect of the present invention, the output transmission line of the output matching circuit of the high frequency amplifier according to the present invention has a second projecting portion projecting outward from a part of the outer periphery of the output transmission circuit. It further comprises a second guide assist means electrically connected to the protrusion.

The second projecting portion and the second guidance assisting means exhibit the inductive property with respect to the high frequency amplified signal flowing in the vicinity of the outer circumference of the output transmission line (hereinafter, abbreviated as "outer circumference vicinity high frequency amplified signal"). As a result, the electric field of the high frequency amplified signal near the outer circumference can be changed.

As a result, in the high frequency amplifier according to claim 5, the phase of the high frequency amplified signal in the vicinity of the outer circumference, which tends to be delayed in phase, is advanced so that the position of the high frequency amplified signal caused by the difference in the signal propagation path on the output transmission line is increased. Since the composite output can be performed to the output terminal while minimizing the phase difference, high gain and high output operation can be performed.

Further, in the high frequency amplifier of the sixth aspect, as the second induction assisting means, one end is electrically connected to the second projecting portion and the other end is grounded, and the second projecting portion and the second projecting portion are connected together. A second auxiliary line forming a short-circuit terminating line of No. 2 is provided, and the second auxiliary line includes a second capacitor having a capacitance that can be ignored from a high frequency amplified signal, and includes the line length of the second short-circuit terminating line. It is set shorter than a quarter wavelength of the high frequency amplified signal.

Therefore, the line length is 1 of the high frequency amplified signal.
The second short-circuit terminating line shorter than / 4 wavelength exhibits the inductive property with respect to the high-frequency amplified signal in the vicinity of the outer circumference, thereby changing the electric field of the high-frequency amplified signal in the vicinity of the outer circumference.

As a result, in the high frequency amplifier according to the sixth aspect, by advancing the phase of the high frequency amplified signal in the vicinity of the outer periphery, which tends to be delayed in phase, the position of the high frequency amplified signal generated by the difference in the signal propagation paths on the output transmission line is increased. Since the composite output can be performed to the output terminal while minimizing the phase difference, high gain and high output operation can be performed.

In addition, the second capacitor inserted in the second short-circuit termination line can surely avoid the problem that the DC components of the plurality of output sections of the amplification section are set to the ground level. It does not adversely affect the high frequency amplified signal.

Further, in the high frequency amplifier of the seventh aspect, as the second induction assisting means, one end is electrically connected to the second projecting portion and the other end is opened, and the second projecting portion together with the second projecting portion. A second auxiliary line that forms two open termination lines is provided, and the line length of the second open termination line is set to 1 of the high frequency amplified signal.
It is set to be longer than / 4 wavelength and shorter than 1/2 wavelength.

Therefore, the line length is 1 of the high frequency amplified signal.
The second open-ended line longer than / 4 wavelength and shorter than 1/2 wavelength exerts inductive property on the high-frequency amplified signal in the vicinity of the outer circumference, thereby changing the electric field of the high-frequency amplified signal in the vicinity of the outer circumference.

As a result, the high-frequency amplifier according to claim 7 advances the phase of the near-outer periphery high-frequency amplified signal, which tends to be delayed in phase, so that the position of the high-frequency amplified signal generated by the difference in the signal propagation paths on the output transmission line is increased. Since the composite output can be performed to the output terminal while minimizing the phase difference, high gain and high output operation can be performed.

Since the amplifying section of the high-frequency amplifier according to claim 8 is composed of a plurality of amplifying elements having at least one input section and one output section, at least one output section of each of the plurality of amplifying elements is output. Since the high frequency amplified signal is combined on the output terminal via the output matching circuit, a higher output high frequency amplified signal can be obtained from the output terminal.

[Brief description of drawings]

FIG. 1 is a top view showing a configuration of a high frequency amplifier according to a first embodiment of the present invention.

FIG. 2 is a sectional view taken along line AA of FIG.

FIG. 3 is a graph showing the effect of the first embodiment.

FIG. 4 is a top view showing a configuration of a high frequency amplifier according to a second embodiment of the present invention.

5 is a cross-sectional view taken along the line BB of FIG.

FIG. 6 is a top view showing a configuration of a high frequency amplifier according to a third embodiment of the present invention.

7 is a cross-sectional view taken along line CC of FIG.

FIG. 8 is a top view showing the configuration of a high frequency amplifier according to a fourth embodiment of the present invention.

9 is a sectional view taken along line DD of FIG.

FIG. 10 is a top view showing the configuration of a high frequency amplifier according to a fifth embodiment of the present invention.

11 is a cross-sectional view taken along line DD of FIG.

FIG. 12 is a top view showing a configuration of a conventional high frequency amplifier.

FIG. 13 is a graph showing a problem of a conventional high frequency amplifier.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 GaAsFET chip, 4 protrusions, 5 capacitors, 6 gold wires, 7 auxiliary lines, 11 short circuit termination lines, 12 open circuit termination lines, 13 short circuit termination lines, 14
Open termination line, 20 input matching circuit, 23 input transmission line, 24 input transmission line, 30 output matching circuit, 33
Output transmission line, 34 Output transmission line.

Claims (8)

[Claims] 1. An input terminal for receiving a high-frequency signal of a predetermined frequency, an amplifier section having a plurality of input sections, each amplifying a signal given to the plurality of input sections, the input terminal and the amplifier section. Of the input matching circuit, which is electrically interposed between the plurality of input parts of the input matching circuit and the input matching circuit for matching the impedance on the input terminal side and the input impedance on the amplifying part side. The circuit includes an input transmission line having a planar shape that gradually expands in an input signal propagation direction from the input terminal to the input unit, and the input transmission line is formed so as to project outward from a part of an outer periphery thereof. Further comprising: a guidance assisting means electrically connected to the projection, together with the projection, exhibiting inductivity with respect to the high frequency signal flowing near the outer periphery of the input transmission line. High-frequency amplifier, characterized in that. 2. The induction assisting device comprises an auxiliary line having one end electrically connected to the protrusion and the other end grounded to form a short-circuit termination line with the protrusion, the auxiliary line being the high frequency wave. The high frequency amplifier according to claim 1, wherein a capacitor having a capacity that can be ignored from the signal is included and the line length of the short-circuit termination line is set shorter than a quarter wavelength of the high frequency signal. 3. The line of the open termination line, wherein the guidance assisting means includes an auxiliary line having one end electrically connected to the projecting portion and the other end being opened to form an open termination line together with the projecting portion. The high frequency amplifier according to claim 1, wherein the length is set to be longer than a quarter wavelength of the high frequency signal and shorter than a half wavelength thereof. 4. The high frequency amplifier according to claim 3, wherein the input transmission line and the open termination line of the input matching circuit are formed in a multilayer structure. 5. The amplifying unit further includes a plurality of output units for outputting the amplified high frequency amplified signal, and electrically connecting between an output terminal and the output terminal and the plurality of output units of the amplifying unit. And an output matching circuit for interposing an impedance on the output terminal side and an output impedance on the amplifying section side, the output matching circuit being configured to interpose an output signal propagation reverse from the output terminal to the output section. An output transmission line having a planar shape that gradually expands in a direction, the output transmission line having a second projecting portion formed to project outward from a part of an outer periphery thereof, 2. A second guide assisting unit electrically connected to the protrusion, together with the protrusion, exhibiting inductivity for the high frequency amplified signal.
The described high-frequency amplifier. 6. The second guidance assisting device has one end electrically connected to the protrusion and the other end grounded.
A second auxiliary line forming a second short-circuit terminating line together with the protruding part of the second auxiliary line, the second auxiliary line including a second capacitor having a capacitance negligible from the high frequency amplified signal, and the second auxiliary line. 6. The high frequency amplifier according to claim 5, wherein the line length of the short-circuit terminating line is set to be shorter than a quarter wavelength of the high frequency amplified signal. 7. The second guide assisting means, wherein one end is electrically connected to the second projecting portion and the other end is opened, and the second guiding assisting means forms an open termination line together with the second projecting portion. Of the high frequency amplified signal.
The high frequency amplifier according to claim 5, wherein the wavelength is set to be longer than 4 wavelengths and shorter than 1/2 wavelength. 8. The high frequency amplifier according to claim 5, wherein the amplifying unit is composed of a plurality of amplifying elements each having at least one input unit and one output unit.