JPH07283556A - Airtight terminal structure of package - Google Patents

Airtight terminal structure of package

Info

Publication number
JPH07283556A
JPH07283556A JP7028694A JP7028694A JPH07283556A JP H07283556 A JPH07283556 A JP H07283556A JP 7028694 A JP7028694 A JP 7028694A JP 7028694 A JP7028694 A JP 7028694A JP H07283556 A JPH07283556 A JP H07283556A
Authority
JP
Japan
Prior art keywords
insulator
package
hole
terminal
characteristic impedance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7028694A
Other languages
Japanese (ja)
Other versions
JP2533291B2 (en
Inventor
Haruo Kojima
治夫 小島
Naohito Miyamaru
尚人 宮丸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP6070286A priority Critical patent/JP2533291B2/en
Publication of JPH07283556A publication Critical patent/JPH07283556A/en
Application granted granted Critical
Publication of JP2533291B2 publication Critical patent/JP2533291B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PURPOSE:To provide an airtight terminal structure of a package with less deterioration in electrical characteristics without deteriorating mechanical strength and airtightness. CONSTITUTION:The title structure consists of a metal package 11 where a through hole 12 is formed, a terminal 13 positioned in the through hole 12, and an insulator 14 filled into a smaller section than the total length of the through hole 12 out of the space formed between the terminal 13 and a wall surface 12a of the through hole 12.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、高周波機器などを構成
するパッケージを貫通して設けられる端子を気密に形成
するパッケージの気密端子構造に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a package airtight terminal structure for hermetically forming terminals provided through a package constituting a high frequency device or the like.

【0002】[0002]

【従来の技術】従来のパッケージの気密端子構造につい
て、図8を参照して説明する。81はパッケージの一部
で、パッケージ81には貫通穴82が設けられている。
そして、貫通穴82の部分に端子83を配置し、端子8
3と貫通穴82の壁面82a間にガラスなどの絶縁体8
4を充填し気密にしている。
2. Description of the Related Art A conventional airtight terminal structure of a package will be described with reference to FIG. Reference numeral 81 is a part of the package, and the package 81 is provided with a through hole 82.
Then, the terminal 83 is arranged in the through hole 82, and the terminal 8
3 and the wall surface 82a of the through hole 82 between the insulator 8 such as glass
4 is filled and made airtight.

【0003】ところで、従来のパッケージの気密端子構
造の場合、絶縁体84の直径や厚さ、および端子83の
直径などは、端子83の機械的強度や気密度を考慮して
決定される。そして、端子83の延長方向における絶縁
体84の厚みはパッケージ81の厚みとほぼ等しくなっ
ている。なお、端子83やパッケージ81、絶縁体84
は1つの同軸線路を構成する。このとき、端子83やパ
ッケージ81などで構成される同軸線路の特性インピー
ダンスは、通常の場合、高周波機器などで使用される特
性インピーダンス系、例えば50オーム系や75オーム
系より低くなる。
By the way, in the case of the airtight terminal structure of the conventional package, the diameter and thickness of the insulator 84 and the diameter of the terminal 83 are determined in consideration of the mechanical strength and airtightness of the terminal 83. The thickness of the insulator 84 in the extension direction of the terminal 83 is substantially equal to the thickness of the package 81. The terminal 83, the package 81, the insulator 84
Constitutes one coaxial line. At this time, the characteristic impedance of the coaxial line constituted by the terminal 83, the package 81, etc. is usually lower than that of the characteristic impedance system used in high-frequency equipment or the like, for example, 50 ohm system or 75 ohm system.

【0004】[0004]

【発明が解決しようとする課題】ところで、端子やパッ
ケージなどが構成する同軸線路の特性インピーダンスが
所望の特性インピーダンス系より低い場合、このような
同軸線路を所望の特性インピーダンス系で使用すると、
インピーダンス整合がとれなくなりVSWR(電圧定在
波比)など電気的特性が悪化する。また、このような電
気的特性の悪化は周波数が高くなればなるほど大きくな
る。
By the way, when the characteristic impedance of the coaxial line formed by the terminals, the package, etc. is lower than the desired characteristic impedance system, when such a coaxial line is used in the desired characteristic impedance system,
Impedance matching cannot be achieved and electrical characteristics such as VSWR (voltage standing wave ratio) deteriorate. Further, such deterioration of the electrical characteristics becomes more serious as the frequency becomes higher.

【0005】そこで、電気的特性の悪化を小さくするた
めに特性インピーダンスを高くすることが考えられる。
例えば端子83の直径を小さくしたり、あるいは絶縁体
84の直径を大きくするなどの方法である。しかし、端
子83の直径を小さくし、また、絶縁体84の部分を多
くすると、端子の機械的強度が劣化したり気密度が損な
われたりする。
Therefore, it can be considered to increase the characteristic impedance in order to reduce the deterioration of the electrical characteristics.
For example, the diameter of the terminal 83 may be reduced, or the diameter of the insulator 84 may be increased. However, if the diameter of the terminal 83 is made small and the portion of the insulator 84 is made large, the mechanical strength of the terminal is deteriorated and the airtightness is impaired.

【0006】本発明は、上記した欠点を解決するもの
で、機械的強度や気密度を劣化させずに、電気的特性の
悪化を少なくしたパッケージの気密端子構造を提供する
ことを目的とする。
The present invention solves the above-mentioned drawbacks, and an object of the present invention is to provide an airtight terminal structure for a package in which deterioration of electrical characteristics is suppressed without deteriorating mechanical strength and airtightness.

【0007】[0007]

【課題を解決するための手段】本発明のパッケージの気
密端子構造は、貫通穴が形成された金属パッケージと、
前記貫通穴の中に位置する端子と、この端子と前記貫通
穴の壁面間で形成される空間のうち、前記貫通穴の全長
より短い区間に充填される絶縁体とで構成されている。
An airtight terminal structure for a package according to the present invention includes a metal package having a through hole,
It is composed of a terminal located in the through hole and an insulator filled in a section shorter than the entire length of the through hole in a space formed between the terminal and a wall surface of the through hole.

【0008】また、前記絶縁体が充填された部分の径
が、前記絶縁体が充填されていない部分の径より小さく
なるように、前記貫通穴を形成している。
The through holes are formed so that the diameter of the portion filled with the insulator is smaller than the diameter of the portion not filled with the insulator.

【0009】[0009]

【作用】上記の構成によれば、端子や絶縁体、パッケー
ジによって、端子を中心導体とする同軸線路が形成され
る。また、この同軸線路には絶縁体がある部分と絶縁体
がない部分がある。絶縁体がない部分の同軸線路は、中
心導体とパッケージ間は空気で比誘電率は1となり、そ
の特性インピーダンスは所望の特性インピーダンス系よ
り高く誘導性となる。また、絶縁体がある部分の同軸線
路は、絶縁体の存在でその特性インピーダンスは所望の
特性インピーダンス系より低く容量性となる。したがっ
て、絶縁体がある特性インピーダンスの低い同軸線路の
容量性と、絶縁体がない特性インピーダンスの高い同軸
線路の誘導性とで、所望の特性インピーダンスに整合す
ることができる。その結果、VSWRなど電気的特性の
悪化を小さくできる。
According to the above construction, the terminal, the insulator, and the package form a coaxial line having the terminal as a central conductor. Further, this coaxial line has a portion with an insulator and a portion without an insulator. The coaxial line in the part without the insulator has a relative dielectric constant of 1 between the center conductor and the package, and its characteristic impedance is higher than the desired characteristic impedance system and inductive. Further, the coaxial line in the portion where the insulator is present has a characteristic impedance lower than that of a desired characteristic impedance system and becomes capacitive due to the presence of the insulator. Therefore, it is possible to match the desired characteristic impedance with the capacitive property of the coaxial line having the insulator and the low characteristic impedance and the inductive property of the coaxial line having the insulator and having the high characteristic impedance. As a result, deterioration of electrical characteristics such as VSWR can be reduced.

【0010】また、絶縁体が充填されていない部分の径
を、絶縁体が充填された部分の径より大きくすることに
より、絶縁体がない部分の同軸線路の特性インピーダン
スをより高くできる。
Further, by making the diameter of the portion not filled with the insulator larger than the diameter of the portion filled with the insulator, the characteristic impedance of the coaxial line in the portion without the insulator can be further increased.

【0011】[0011]

【実施例】本発明の一実施例について、図1の断面図を
参照して説明する。11はパッケージの一部で、パッケ
ージ11には貫通穴12が形成されている。そして、貫
通穴12の中央に端子13が配置される。また端子13
と貫通穴12の壁面12a間にガラスなどの絶縁体14
が充填され、気密にされる。なお、絶縁体14は、貫通
穴12の全長より短い区間例えば中央部分にのみ充填さ
れる。したがって、貫通穴12の上下の両端部には、絶
縁体14がなく端子13だけの部分ができる。上記した
構成により、端子13や絶縁体14、パッケージ11に
よって、端子13を中心導体とする同軸線路が形成され
る。
DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to the sectional view of FIG. Reference numeral 11 is a part of the package, and a through hole 12 is formed in the package 11. Then, the terminal 13 is arranged in the center of the through hole 12. Also terminal 13
And an insulator 14 such as glass between the wall surface 12a of the through hole 12 and
Is filled and made airtight. The insulator 14 is filled only in a section shorter than the entire length of the through hole 12, for example, the central portion. Therefore, there is no insulator 14 at both upper and lower ends of the through hole 12, and only the terminal 13 is formed. With the above configuration, the terminal 13, the insulator 14, and the package 11 form a coaxial line having the terminal 13 as a central conductor.

【0012】なお、端子13の一端は、高周波基板15
に形成されたマイクロストリップ線路16に接続され
る。また、絶縁体14の直径や厚み、あるいは端子13
の直径は、端子13の機械的強度や気密度を考慮して決
められる。
It should be noted that one end of the terminal 13 is connected to the high-frequency substrate 15
It is connected to the microstrip line 16 formed in. In addition, the diameter and thickness of the insulator 14 or the terminal 13
The diameter of is determined in consideration of the mechanical strength and airtightness of the terminal 13.

【0013】図2は、図1におけるパッケージの気密端
子構造部分の等価回路である。21A、21Cは、絶縁
体がない貫通穴の両端部における等価回路で、21Bは
絶縁体がある貫通穴の中央部分の等価回路である。例え
ば入力側の部分、即ち等価回路21Aで示された部分は
特性インピーダンスが高い同軸線路を形成し、インピー
ダンスAは誘導性となる。また、絶縁体がある貫通穴の
中央部分、即ち等価回路21Bで示された部分は特性イ
ンピーダンスが低い同軸線路を構成し、インピーダンス
Bは容量性となる。また、出力側の部分、即ち等価回路
21Cで示された部分は特性インピーダンスが高い同軸
線路を構成する。このような構成で所望の特性インピー
ダンス系Cに整合するパッケージの気密端子構造が実現
される。この結果、高周波におけるVSWRなど電気的
特性の悪化を小さくできる。
FIG. 2 is an equivalent circuit of the airtight terminal structure portion of the package shown in FIG. 21A and 21C are equivalent circuits at both ends of the through hole having no insulator, and 21B is an equivalent circuit of the central portion of the through hole having the insulator. For example, the input side portion, that is, the portion indicated by the equivalent circuit 21A forms a coaxial line having a high characteristic impedance, and the impedance A becomes inductive. Further, the central portion of the through hole having the insulator, that is, the portion indicated by the equivalent circuit 21B constitutes a coaxial line having a low characteristic impedance, and the impedance B becomes capacitive. The output side portion, that is, the portion indicated by the equivalent circuit 21C constitutes a coaxial line having a high characteristic impedance. With such a structure, the airtight terminal structure of the package matching the desired characteristic impedance system C is realized. As a result, deterioration in electrical characteristics such as VSWR at high frequencies can be reduced.

【0014】図3は、図2で示された等価回路におい
て、点A〜Cにおけるインピーダンスの軌跡を示してい
る。この図から分かるように所望の特性インピーダンス
系Cに整合できる。
FIG. 3 shows the locus of impedance at points A to C in the equivalent circuit shown in FIG. As can be seen from this figure, the desired characteristic impedance system C can be matched.

【0015】また、図1のようにパッケージの気密端子
構造を構成する端子13をマイクロストリップ線路16
に接続した場合、マイクロストリップ線路16側の貫通
穴12部分に絶縁体14のない空間ができる。この空間
は端子13に対する機械的ストレスを緩和するように作
用する。したがって、パッケージ11とマイクロストリ
ップ線路16上の電極との間に、機械的ストレスを緩和
するスペースを設ける必要がなくなる。
Further, as shown in FIG. 1, the terminal 13 constituting the airtight terminal structure of the package is connected to the microstrip line 16.
In the case of the connection with, the space without the insulator 14 is formed in the through hole 12 portion on the microstrip line 16 side. This space acts to relieve the mechanical stress on the terminal 13. Therefore, it is not necessary to provide a space for relieving mechanical stress between the package 11 and the electrode on the microstrip line 16.

【0016】図4および図5は、本発明の他の実施例を
示す。これらの実施例は、絶縁体14がない部分を貫通
穴12の一方の端部にのみ形成している。例えば図4は
貫通穴12の上方即ち入力側に絶縁体14がない部分を
形成し、図5は貫通穴12の下方即ち出力側に絶縁体1
4がない部分を形成している。この場合も、絶縁体14
の有無により特性インピーダンスが低い同軸線路と高い
同軸線路が形成され、所望の特性インピーダンス系に整
合するパッケージの気密端子構造が得られる。なお、図
4や図5では、図1に対応する部分には同一の符号を付
し重複する説明は省略する。
4 and 5 show another embodiment of the present invention. In these embodiments, the portion without the insulator 14 is formed only at one end of the through hole 12. For example, in FIG. 4, a portion without the insulator 14 is formed above the through hole 12, that is, on the input side. In FIG. 5, the insulator 1 is provided below the through hole 12, that is, on the output side.
4 forms a part without. In this case also, the insulator 14
By the presence or absence of the above, a coaxial line having a low characteristic impedance and a coaxial line having a high characteristic impedance are formed, and an airtight terminal structure of a package that matches a desired characteristic impedance system is obtained. 4 and 5, the parts corresponding to those in FIG. 1 are designated by the same reference numerals, and overlapping description will be omitted.

【0017】図6は、本発明のもう1つの他の実施例で
ある。図6の場合も図1に対応する部分には同一の符号
を付し、図1と相違する部分を中心に説明する。この実
施例では、パッケージ11に形成された貫通穴12の下
方、例えば出力側で絶縁体をなくし特性インピーダンス
の高い同軸線路を形成している。また、入力側は金リボ
ンあるいは金ワイヤなどの接続片61を端子13にマウ
ントし、パッケージ11上で端子13に直角方向に設け
られた回路基板62上の線路(図示せず)に接続片61
を接続している。この場合、接続片61のインダクタン
ス成分が、特性インピーダンスの高い同軸線路と同様に
機能し、電気的特性の悪化を低減する。図7も本発明の
他の実施例である。図7の場合も図1に対応する部分に
は同一の符号を付し、図1と相違する部分を中心に説明
する。この実施例では、パッケージ11に形成される貫
通穴12の径に変化を持たせている。絶縁体14が充填
されている中央部分の貫通穴12の直径を、絶縁体14
が充填されていない両端部分の直径より小さくしてい
る。この場合、絶縁体14が充填されない部分で形成さ
れる同軸線路の特性インピーダンスをより高くできる。
FIG. 6 is another embodiment of the present invention. In the case of FIG. 6 as well, parts corresponding to those of FIG. 1 are designated by the same reference numerals, and the description will be centered on the parts different from FIG. In this embodiment, the coaxial line having a high characteristic impedance is formed by removing the insulator below the through hole 12 formed in the package 11, for example, on the output side. On the input side, a connecting piece 61 such as a gold ribbon or a gold wire is mounted on the terminal 13, and the connecting piece 61 is connected to a line (not shown) on the circuit board 62 provided on the package 11 in a direction perpendicular to the terminal 13.
Are connected. In this case, the inductance component of the connection piece 61 functions like a coaxial line having a high characteristic impedance, and reduces deterioration of electrical characteristics. FIG. 7 is also another embodiment of the present invention. In the case of FIG. 7 as well, parts corresponding to those of FIG. 1 are denoted by the same reference numerals, and the description will be centered on the parts different from FIG. In this embodiment, the diameter of the through hole 12 formed in the package 11 is changed. The diameter of the through hole 12 in the central portion filled with the insulator 14 is set to the insulator 14
Is smaller than the diameter of both ends that are not filled. In this case, the characteristic impedance of the coaxial line formed in the portion not filled with the insulator 14 can be further increased.

【0018】[0018]

【発明の効果】本発明によれば、機械的強度や気密度が
劣化せず、また電気的特性の悪化が小さいパッケージの
気密端子構造を実現できる。
According to the present invention, it is possible to realize a package hermetic terminal structure in which mechanical strength and airtightness are not deteriorated and electrical characteristics are not significantly deteriorated.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例を説明する断面図である。FIG. 1 is a sectional view illustrating an embodiment of the present invention.

【図2】本発明の一実施例を説明する等価回路である。FIG. 2 is an equivalent circuit illustrating an embodiment of the present invention.

【図3】本発明の一実施例を説明するスミスチャートで
ある。
FIG. 3 is a Smith chart illustrating an example of the present invention.

【図4】本発明の他の実施例を示す断面図である。FIG. 4 is a sectional view showing another embodiment of the present invention.

【図5】本発明の他の実施例を示す断面図である。FIG. 5 is a cross-sectional view showing another embodiment of the present invention.

【図6】本発明の他の実施例を示す断面図である。FIG. 6 is a sectional view showing another embodiment of the present invention.

【図7】本発明の他の実施例を説明する断面図である。FIG. 7 is a sectional view illustrating another embodiment of the present invention.

【図8】従来例を示す断面図である。FIG. 8 is a cross-sectional view showing a conventional example.

【符号の説明】[Explanation of symbols]

11…パッケージ 12…貫通穴 12a…壁面 13…端子 14…絶縁体 15…高周波基板 16…マイクロストリップ線路 11 ... Package 12 ... Through hole 12a ... Wall surface 13 ... Terminal 14 ... Insulator 15 ... High frequency substrate 16 ... Microstrip line

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 貫通穴が形成された金属パッケージと、
前記貫通穴の中に位置する端子と、この端子と前記貫通
穴の壁面間で形成される空間のうち、前記貫通穴の全長
より短い区間に充填される絶縁体とを具備したパッケー
ジの気密端子構造。
1. A metal package having a through hole,
A hermetic terminal of a package including a terminal located in the through hole and an insulator filled in a space shorter than the entire length of the through hole in a space formed between the terminal and a wall surface of the through hole. Construction.
【請求項2】 前記絶縁体が充填された部分の径が、前
記絶縁体が充填されていない部分の径より小さくなるよ
うに、前記貫通穴を形成したことを特徴とする請求項1
記載のパッケージの気密端子構造。
2. The through hole is formed such that a diameter of a portion filled with the insulator is smaller than a diameter of a portion not filled with the insulator.
Airtight terminal structure of the described package.
JP6070286A 1994-04-08 1994-04-08 Airtight terminal structure of package Expired - Lifetime JP2533291B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6070286A JP2533291B2 (en) 1994-04-08 1994-04-08 Airtight terminal structure of package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6070286A JP2533291B2 (en) 1994-04-08 1994-04-08 Airtight terminal structure of package

Publications (2)

Publication Number Publication Date
JPH07283556A true JPH07283556A (en) 1995-10-27
JP2533291B2 JP2533291B2 (en) 1996-09-11

Family

ID=13427094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6070286A Expired - Lifetime JP2533291B2 (en) 1994-04-08 1994-04-08 Airtight terminal structure of package

Country Status (1)

Country Link
JP (1) JP2533291B2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0294416U (en) * 1989-01-07 1990-07-26
JPH0454153U (en) * 1990-09-12 1992-05-08
JPH0455835U (en) * 1990-09-21 1992-05-13

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0294416U (en) * 1989-01-07 1990-07-26
JPH0454153U (en) * 1990-09-12 1992-05-08
JPH0455835U (en) * 1990-09-21 1992-05-13

Also Published As

Publication number Publication date
JP2533291B2 (en) 1996-09-11

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