JPH07283439A - Semiconductor light emitting element and manufacturing method thereof - Google Patents

Abstract

PURPOSE:To avoid damage and breakage to or near a PN junction part when an insulating substrate, etc., is mounted by a method wherein the PN junction part and the nearby parts exposed to at least one end of the vertical end to the PN junction surface of a semiconductor layer of a semiconductor light emitting element are formed on the positions lower than the surrounding vertical ends. CONSTITUTION:A PN junction part and a rear part thereof are concavely formed on the positions lower than the surrounding surfaces. At this time, if the maximum diameters of the metallic particles, etc., contained in anisotropical conductive region made bonding agents 9, 10 are assumed to be 5mum, the step difference between the PN junction parts and the surrounding faces 13 shall exceed at least 5mum. Accordingly, the PN junction and the surrounding parts 13 are to be made lower than the PN junction parts and the surrounding part 13 so that the pressure may be lightened thereby enabling the damage and breakage to or near the PN junction parts 13 to be avoided.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ultra-compact and highly functional semiconductor light emitting device and a method for manufacturing the same, more specifically, it has the same performance as a cathode ray tube, a liquid crystal display, etc. The present invention relates to a semiconductor light emitting element that can be adopted in low-cost display devices and the like, and a method for manufacturing the same.

[0002]

2. Description of the Related Art As shown in FIGS. 11 and 12, a conventional semiconductor light emitting device 101 has a structure in which a P-type semiconductor layer also made of GaP, GaAs or the like is formed on an N-type semiconductor layer 102 made of GaP, GaAs or the like. After stacking 103, a metal thin film made of Ag, Au, or the like is sequentially stacked on both end surfaces parallel to the PN junction surface 104 to form a P electrode layer 111 and an N electrode layer 112.
Are formed.

As shown in FIG. 13, the mounting method for forming a display device or the like using the above semiconductor light emitting element is as follows. First, the first electrode portion 120 provided on the insulating substrate or the lead frame and the semiconductor light emitting element 101. And the N electrode layer 112 of a conductive brazing material made of a metal such as indium or a conductive resin adhesive 119 such as Ag-epoxy resin.
And the semiconductor light emitting device 101
The P electrode layer 111 and the second electrode portion 121 provided on the insulating substrate or the lead frame are electrically connected by a metal wire 125 such as Au thin wire.

Alternatively, the semiconductor light emitting element 101 is formed as an individual chip component, and the chip component is mounted on an insulating substrate to form a display device or the like, as shown in FIG. The metal lead frame 1
26 or the insulating substrate 128 having the circuit wiring, and then, it is formed by sealing with the light-transmitting resins 127 and 129.

In addition to the above-mentioned conventional technique, another conventional semiconductor light emitting device having a different shape and mounting method has been devised, and a method for manufacturing the same.

Another conventional semiconductor light emitting device 130.
As shown in FIGS. 15 and 16, the structure of GaP and GaAs is
After the P-type semiconductor layer 103 also made of GaP, GaAs or the like is laminated on the N-type semiconductor layer 102 made of, etc., the metal made of Ag, Au, etc. is formed on the entire end faces parallel to the PN junction surface 104. Thin films are sequentially stacked to form the P electrode layer 11
1'and an N electrode layer 112 'are formed.

As shown in FIG. 17, the mounting method for forming a display device or the like using the semiconductor light emitting device according to the above-mentioned other prior art is first to prevent the displacement of the semiconductor light emitting device 130 during conductive bonding. Then, the insulating adhesive 124 is applied in advance between the electrode portions 120 and 121 such as the insulating substrate or the lead frame. This insulating adhesive may be used to protect the exposed PN junction portion on the semiconductor light emitting element mounting surface side.

Next, a conductive brazing material made of a metal such as indium or a conductive resin adhesive 119 made of Ag-epoxy resin is applied in advance on the electrode portions 120 and 121 such as the insulating substrate or the lead frame. Then, after the P and N electrode layers 111 ′ and 112 ′ of the semiconductor light emitting device 130 are respectively placed on the electrode portions 120 and 121 such as an insulating substrate or a lead frame, a conductive brazing material or resin adhesive 119 is applied to a predetermined area. It is cured and formed under curing conditions.

In FIG. 17A, the distance x ₃ between the electrodes of the insulating substrate or the lead frame is defined as P.
Shows how to implement when taken smaller than the distance N the electrode layers, (b) is, P · N of the semiconductor light emitting element of this distance x ₄
The mounting method is shown when the distance between the two electrode layers is wider than the distance between the two electrode layers.

[0010]

The above conventional semiconductor light emitting device has the following problems.

(1) The semiconductor light emitting device as shown in FIGS. 11 and 12 is constructed so as to mainly utilize the emitted light toward the P electrode. Therefore, there is a problem in that the light utilization efficiency is poor because the amount of emitted light is reduced by being blocked by the P electrode formed on the surface from which the emitted light is emitted.

(2) When mounting the semiconductor light emitting device of FIGS. 11 and 12, it is indispensable to connect to the substrate electrode portion by Au wire or the like as shown in FIG. However, when it is used for a display device or the like, it is necessary to mount a large number of semiconductor light emitting elements, and on the other hand, the processing capacity (speed, accuracy, etc.) of the device is limited, resulting in enormous equipment investment and low yield.
There was a problem that the cost of materials such as Au wire was increased.

(3) In the semiconductor light emitting device as shown in FIG. 14, in addition to the problems (1) and (2) described above, the size of each semiconductor light emitting device becomes large, and the cathode ray tube which is the minimum necessary for the display device. At least 500 μm, which is equivalent to pixels such as
It is difficult to make the dimension below the corner. Further, there is a problem that the semiconductor light emitting element in the form of individual chip parts becomes very expensive in terms of price.

(4) In the semiconductor light emitting device as shown in FIGS. 15 and 16, since the light emission from the end face side where the PN junction is exposed is utilized, the electrode layer is mounted on the substrate or the like when mounted on the substrate or the like. A step of mounting so as to contact in the vertical direction is required. During this process, the end surface where the PN junction is exposed physically contacts the mounting device, the substrate, etc., so that the end surface where the PN junction is exposed is apt to be scratched or chipped, and the end surface where the PN junction is exposed is easily damaged. There is a problem that it may cause damage or short circuit failure.

(5) To mount the semiconductor light emitting device shown in FIGS. 15 and 16 on a substrate or the like, as shown in FIG.
It is necessary to connect both electrodes with a conductive brazing material or resin adhesive, but the P electrode surface and the PN junction surface are separated from each other by only a few to several tens of μm. When the agent wraps between the substrate etc. and the semiconductor light emitting element, a short circuit and a leakage current due to a conductive brazing material or a resin adhesive at the end face where the PN junction is exposed occur,
Therefore, there is a problem that the semiconductor light emitting device does not operate normally.

Further, the semiconductor light emitting element must be temporarily fixed in advance to the mounting position with an insulating adhesive or the like, which causes a problem that the process is complicated and the cost is increased.

When the fixing insulating adhesive is used to protect the exposed PN junction, it is difficult to control the coating amount, and the adhesive adheres to the electrode surface formed on the substrate or the like to form the semiconductor light emitting element. There is a problem that connection with the electrode layer becomes difficult.

Further, since the metal thin film of the electrode layer of the semiconductor light emitting element and the conductive brazing material or resin adhesive are not well compatible with each other,
There was a problem of causing poor connection.

Furthermore, in order to secure the distance between the PN junction surface and the electrode layer, or to ensure the connection and alignment with the electrode on the substrate, it is necessary to form the electrode layer thicker than 100 μm. However, in this case, the thicker the electrode layer, the greater the interlayer stress due to the difference in expansion coefficient between the electrode layer and the semiconductor layer, resulting in stress breakdown of the semiconductor layer and peeling of the electrode layer. There was a problem that it caused such as.

On the other hand, if the electrode layer is formed to a thickness of 20 μm or less, there is a problem that the electrode cannot be sufficiently connected and conduction cannot be obtained.

[0021]

The present invention has been made in view of the above problems, and in a semiconductor light emitting device and a method for manufacturing the same, (1) a semiconductor layer of a semiconductor light emitting device is provided with an end surface perpendicular to a PN junction surface. It is characterized in that at least the PN junction portion exposed on at least one end face and the vicinity thereof are formed so as to be at a position lower than a peripheral vertical end face, or are formed in a concave shape.

(2) The PN junction portion exposed on at least one end face of the semiconductor layer of the semiconductor light emitting element, which is perpendicular to the PN junction face, and its vicinity are formed of an insulating material. To do.

Alternatively, the end face formed of an insulating material is
It is characterized by having the same surface as the end surface perpendicular to the PN junction surface.

Further, the insulating substance is selected from organic materials such as epoxy resin and phenol resin and inorganic materials such as SiO ₂ and Al ₂ O ₃ which are transparent to the light emitted from the semiconductor light emitting element. It is characterized by being a substance.

(3) The semiconductor layer of the semiconductor light emitting device is III
It is characterized by being a substance selected from semiconductor materials such as -V group compound semiconductors, II-VI group compound semiconductors, and SiC.

(4) The electrode layer formed on the semiconductor layer of the semiconductor light emitting device is characterized by being formed by a combination of a metal thin film and a conductive brazing material or a resin adhesive.

Alternatively, the electrode layer is formed by a combination of a metal thin film, an anisotropic conductive resin adhesive and a metal foil.

Alternatively, the film thickness of the electrode layer is 20 to 150 μm.
It is characterized by being between.

Alternatively, the semiconductor light emitting element is characterized in that the electrode layer is arranged so as to be perpendicular to a base such as an insulating substrate or a lead frame.

Further, the electrode layer of the semiconductor light emitting element is characterized in that it is connected to a base such as an insulating substrate or a lead frame using a conductive brazing material or a resin adhesive.

Alternatively, the electrode layer of the semiconductor light emitting element is characterized in that it is connected to a base such as an insulating substrate or a lead frame using an anisotropic conductive resin adhesive.

(5) The external dimensions of the semiconductor light emitting element are 50
It is characterized in that it is 0 μm square or less.

(6) The maximum diameter of the conductive component contained in the anisotropic conductive resin adhesive is such that the PN junction portion exposed on at least one end face of the semiconductor layer, which is perpendicular to the PN junction face, and the vicinity thereof. And smaller than the step between the peripheral vertical end face.

(7) In the method of manufacturing a semiconductor light emitting device, a step of forming a groove portion reaching at least a PN junction surface in the semiconductor layer, a step of forming electrode layers on both sides of the semiconductor layer, the semiconductor layer and both electrodes Cut the layer along the groove,
And a step of separating.

Alternatively, in the method for manufacturing a semiconductor light emitting device, a step of forming a groove portion reaching at least a PN junction surface in the semiconductor layer, a step of covering the groove portion with an insulating material, and electrode layers on both surfaces of the semiconductor layer. Forming step, cutting the semiconductor layer and both electrode layers along the covered groove portion,
And a step of separating.

[0036]

According to the present invention, in a semiconductor light emitting device in which semiconductor layers having a PN junction are laminated and electrode layers are formed with the semiconductor layers sandwiched therebetween, (1) a PN junction surface of the semiconductor layer of the semiconductor light emitting device is provided. Since the PN junction portion exposed on at least one end face of the vertical end face and the vicinity thereof are formed at a position lower than the surrounding vertical end face or are formed in a concave shape, the insulating substrate or It is possible to prevent the PN junction exposed on the end face of the semiconductor light emitting element and the scratches and damages generated in the vicinity thereof from being mounted on a lead frame or the like.

(2) Since the PN junction portion exposed on at least one end face of the semiconductor layer of the semiconductor light emitting element, which is perpendicular to the PN junction face, and its vicinity are formed of an insulating material, the insulating substrate or When the PN junction is exposed on the end face of the semiconductor light emitting element when mounted on a lead frame or the like, and a defect such as a short circuit of the PN junction due to the wraparound of a conductive brazing material or a resin adhesive, scratches or damages is generated. Lost.

Alternatively, the end face formed of an insulating material is
Since it has the same surface as the end surface perpendicular to the PN junction surface, the end surface has stability when mounted on an insulating substrate, a lead frame, or the like, and the semiconductor light emitting element can be mounted easily.

Further, the insulating material is transparent to the light emitted from the semiconductor light emitting element and is selected from organic materials such as epoxy resin and phenol resin and inorganic materials such as SiO ₂ and Al ₂ O _3. Since it uses different materials, the light utilization efficiency does not decrease.

(3) The semiconductor layer of the semiconductor light emitting device is III
-Since it is possible to create by arbitrarily selecting from semiconductor materials such as group-V compound semiconductors, II-VI group compound semiconductors, and SiC, it is easy to make color display devices using semiconductor light-emitting elements of different emission colors. Can be manufactured.

(4) The electrode layer formed on the semiconductor layer of the semiconductor light emitting device is formed by a combination of a metal thin film and a conductive brazing material or a resin adhesive, or is anisotropic from the metal thin film. Since it is formed by the combination of the conductive resin adhesive and the metal foil, the electrode layer can be easily formed.

Further, since the film thickness of the electrode layer is suppressed to 150 μm or less, problems such as stress destruction and electrode peeling can be prevented.

Alternatively, by setting the lower limit of the film thickness to at least 20 μm or more, sufficient conduction can be ensured without causing a hindrance to driving during mounting.

Alternatively, since the electrode layer of the semiconductor light emitting element is arranged so as to be perpendicular to the substrate such as the insulating substrate or the lead frame, there is no electrode layer for blocking the emitted light, and the light utilization efficiency is high. In addition, since the entire surface of the electrode layer is connected with a conductive brazing material, a resin adhesive, or an anisotropic conductive resin adhesive, effective heat dissipation is performed and luminous efficiency is increased. Further, it is not necessary to connect with the substrate electrode portion by Au wire or the like, and it is possible to reduce the process and working time, the material cost, and the size.

Further, when the electrode layer of the semiconductor light emitting element is connected to a base such as an insulating substrate or a lead frame using a conductive brazing material or resin adhesive, the material forming the electrode layer and the electrode portion of the base Since and are made of the same material, they are well compatible.

Alternatively, when the electrode layer of the semiconductor light emitting element is connected to a substrate such as an insulating substrate or a lead frame by using an anisotropic conductive resin adhesive, connection in a minute range is possible, and the mounting dimensions are reduced. Further miniaturization becomes possible.

Since the anisotropic conductive resin adhesive also serves as an insulating adhesive for fixing the semiconductor light emitting element to the insulating substrate or the base body such as the lead frame and protecting the end surface of the PN junction exposed portion, it has been conventionally required. There is no need for the temporary fixing process.

(5) The external dimensions of the semiconductor light emitting element are 50
Since it can be formed with a minute dimension of 0 μm square or less, a high-resolution display device using this can be constructed.

(6) The maximum diameter of the conductive component contained in the anisotropic conductive resin adhesive is such that the PN junction portion exposed on at least one end face of the semiconductor layer, which is perpendicular to the PN junction face, and the vicinity thereof. Since it is designed to be smaller than the step between the peripheral vertical end face, the anisotropic conductive resin adhesive that wraps around other than the connection portion between the semiconductor light emitting element and the base such as the insulating substrate or the lead frame. However, even if it adheres to the PN junction and its vicinity, abnormal driving of the semiconductor light emitting element due to a short circuit, a leakage current, or the like at the end face where the PN junction is exposed does not occur.

(8) In the method of manufacturing a semiconductor light emitting device, a step of forming a groove portion reaching at least a PN junction surface in a semiconductor layer, a step of forming electrode layers on both surfaces of the semiconductor layer, the semiconductor layer and both electrodes Cut the layer along the groove,
Since it has a step of separating, the PN junction portion exposed on the end face of the semiconductor light emitting element and the shape in the vicinity thereof can be easily processed and formed, and further, an electrode layer having a relatively thick thickness is formed on the upper surface. Since it can be formed at the same time as the bottom surface, warpage is unlikely to occur.

Alternatively, in the method for manufacturing a semiconductor light emitting device, a step of forming a groove portion reaching at least a PN junction surface in the semiconductor layer, a step of covering the groove portion with an insulating material, and electrode layers on both sides of the semiconductor layer. Forming step, cutting the semiconductor layer and both electrode layers along the covered groove portion,
In the case of having a step of separating, in addition to the above action,
The PN junction and its vicinity can be easily protected.

[0052]

Embodiments of the present invention will be described with reference to the drawings.

In the present invention, the structure in which the PN junction surface is close to the P-type electrode layer side has been described, but the structure may be close to the N-type electrode layer side.

Further, the semiconductor light emitting device of the present invention is formed into a large single wafer in consideration of mass productivity, and then divided into individual semiconductor light emitting devices.

When each semiconductor light emitting element is used in a display device, it is necessary to have an outer dimension equivalent to that of a pixel such as a cathode ray tube, and various conditions are set so that it can be formed with a dimension of at least 500 μm square. There is.

FIG. 1 is a perspective view of a semiconductor light emitting device formed in the first embodiment of the present invention, FIG. 2 (a) is a sectional view taken along the line AA 'in FIG. 1, and FIG. Figure,
(C) is a bottom view.

The structure of the semiconductor light emitting device 1 of this embodiment is II
IV compound semiconductor, II-VI compound semiconductor or Si
A P-type semiconductor layer 3 made of a semiconductor material such as a III-V group compound semiconductor, a II-VI group compound semiconductor, or SiC is laminated on an N-type semiconductor layer 2 made of a semiconductor material such as C 2. .

Next, the metal thin films 5 and 6 made of, for example, Ag and Au and the metal foils 7 and 8 made of, for example, Au, Ag and Mo are anisotropically formed on the entire surfaces of both end surfaces parallel to the PN junction surface 4. The P electrode layer 11 and the N electrode layer 12 are formed by sequentially laminating the conductive resin adhesives 9 and 10. The film thickness of the metal foils 5 and 6 should be at least 2 in consideration of the mounting condition in the subsequent process.
It is set to 0 μm or more, preferably 30 to 150 μm.

The PN junction and its vicinity 13 are formed in a concave shape so as to be located at a position lower than the peripheral surface. At this time, the level difference between the PN junction portion and its vicinity 13 and the surrounding surface is taken into consideration in consideration of the mounting state in the subsequent process and the like, and the conductivity of the metal powder or the like contained in the anisotropic conductive resin adhesives 9 and 10 is considered. If the maximum diameter of the active substance 14 is, for example, 5 μm, it must be formed so as to be at least larger than 5 μm.

Now, the anisotropic conductive resin adhesive used in the present invention will be additionally described below.

For the sake of explanation, FIG. 3A shows a state in which an anisotropic conductive resin adhesive is applied on the electrode layer of the semiconductor light emitting element, and a metal foil is placed thereon and then cured without load. Sectional drawing, (b) is sectional drawing which shows the state which hardened by applying load.

The anisotropic conductive resin adhesive 9'includes a conductive substance 14 '(granular or scaled) in a resin 15 which is either a thermoplastic resin, a thermosetting resin or a mixture of both. This is the same as the conductive resin adhesive represented by Ag-epoxy resin and the like in that it has both adhesiveness and electroconductivity by kneading a predetermined amount of the shape and the maximum diameter: about several to 10 μm).

In the case of these general conductive resin adhesives,
The kneading ratio of the conductive material is as high as about 50 to 90 wt%, and the conductive materials are in contact with each other in the resin, so that the conductive resin adhesive or its cured product has an electric conductivity (about 5 to about 5 to about metal). 500 × 10 ⁻⁵ Ω / cm).

On the other hand, anisotropic conductive resin adhesive 9 '
Is an anisotropic conductive resin adhesive 9'with no load, by adjusting the kneading ratio of the conductive substance 14 'to several to several tens wt%.
When the resin is cured as it is, the conductive substances 14 ′ hardly contact each other and are dispersed in the resin 15 and thus behave as an insulating resin adhesive.

However, the adhered surfaces 16 and 17 such as electrode surfaces
When a load (indicated by an arrow in the figure) is applied to cure each other while they are pressed against each other, each conductive substance 14 'is directly sandwiched between the adherend surfaces 16 and 17 to create a conductive state. ing.

However, even in this case, if the gap between the adhered surfaces 16 and 17 is larger than the maximum diameter of the conductive substance 14 'for some reason (in the case of the portion circled in the figure), the The conductive state between the adhered surfaces 16 and 17 due to the conductive substance 14 'does not occur.

Next, a method of manufacturing the semiconductor light emitting device in the first embodiment of the present invention will be described in detail.

FIGS. 4A to 4F are procedural diagrams showing a method for manufacturing a semiconductor light emitting device using this embodiment.

As shown in FIG. 4A, first, the structure of the semiconductor light emitting device 1'in a wafer state is an N-type semiconductor made of a semiconductor material such as a III-V group compound semiconductor, a II-VI group compound semiconductor, or SiC. A P-type semiconductor layer 3 made of a semiconductor material such as a III-V group compound semiconductor, a II-VI group compound semiconductor, or SiC is laminated on the layer 2 (layer thickness: about 200 to 300 μm, PN junction surface 4 is After a few to several tens of μm from the surface of the P-type semiconductor layer), metal thin films 5 and 6 made of, for example, Ag or Au are laminated on the entire surface of both end faces parallel to the PN junction surface 4 (layer thickness: about 3 μm). ) Do.

Next, the semiconductor light emitting device 1'in a wafer state
From the surface on the P-type semiconductor layer 3 side to the depth up to the N-type semiconductor layer 2 beyond the PN junction surface 4, for example, by using a diamond blade or the like, a plurality of vertically parallel groove portions 18 is formed. The width of the groove 18 at this time is about 5
The depth is 0 to 80 μm, the depth is about 50 to 150 μm from the surface on the P-type semiconductor layer 3 side, and the pitch between adjacent groove portions is about 200 to 500 μm. It should be noted that these dimensions can be set as appropriate in consideration of the outer dimensions of individual semiconductor light emitting elements to be finally obtained, mass productivity, and the like.

Due to these two kinds of parallel groove portions 18 intersecting vertically, the surface on the P-type semiconductor layer 3 side apparently has a shape in which a large number of quadrangular prisms stand. Here, the pitch of one groove portion and the pitch of the groove portion perpendicularly intersecting the groove portion do not necessarily have to be the same.

It has been empirically that a large number of fine cracks are generated on the surfaces of the two kinds of parallel groove portions 18 that intersect each other vertically, and these cracks adversely affect the performance of the semiconductor light emitting device. Known to.

Therefore, as shown in FIG.
The surface of the groove 18 is chemically treated with an etching solution having a composition of ₂ SO ₄ : H ₂ O ₂ : H ₂ O = 3: 1: 1 to remove fine cracks.

As shown in FIG. 4C, the semiconductor light emitting device 1'in a wafer state after the surface of the groove 18 is chemically treated is formed on the surface of each of the metal thin films 5 and 6 as shown in FIG. Anisotropic conductivity of resin material such as "Morfit TG-9000R" or its similar product in which liquid translucent epoxy resin is mixed with several to several tens wt% of conductive coarse particles (particle diameter: about 10 μm or less) Resin adhesives 9 and 10 are applied (film thickness: about several to 10 μm).

Further, as shown in FIG. 4 (d), for example Au, on both surfaces coated with the anisotropic conductive resin adhesives 9 and 10.
Attach the metal foils 7 and 8 made of Ag, Mo, etc. The film thickness of these metal foils 7 and 8 is set to at least 20 μm or more, preferably 30 to 100 μm in consideration of the mounting state in the subsequent steps. Because the metal foil 7,
When the film thickness of 8 is 20 μm or less, sufficient electrical continuity with the electrode portion of the substrate such as the insulating substrate or the lead frame cannot be obtained, while when it is 100 μm or more, stress fracture or electrode peeling easily occurs. Because. The above conduction has a film thickness of 20 μm
If it is more than 30 μm, it is more reliable. If the film thickness is up to about 150 μm, the frequency of occurrence of the above defects in the present invention is not so high.

In the above state, the anisotropic conductive resin adhesive 9,
10 is still in an uncured state, and then it is necessary to cure this to bond the metal thin films 5 and 6 and the metal foils 7 and 8 in a conductive state.

Therefore, as shown in FIG. 4E, a load is applied from both sides of the semiconductor light emitting device 1'in a wafer state (about 2 to 20 kg / cm ² , pressure is applied from the direction shown by the arrow in the figure).
The anisotropic conductive resin adhesives 9 and 10 are cured while being bridged. The curing conditions vary depending on the types of the anisotropic conductive resin adhesives 9 and 10, but the curing conditions used in this example are 150 ° C-
2 minutes to 200 ° C.-30 seconds.

Finally, as shown in FIG. 4 (f), using, for example, a diamond blade or the like, a wafer is formed along the center of a plurality of two kinds of vertically parallel groove portions 18 (width: about 50 to 80 μm). The semiconductor light emitting device 1 ′ in the state is divided into individual chip-shaped semiconductor light emitting devices 1. At this time, the depth of the concave portion formed in the groove portion 18 should be at least the anisotropic conductive resin adhesive 9 in consideration of the mounting state in the subsequent process.
It is necessary to set the division width so as to be larger than the maximum diameter of the electroconductive substance 14 contained in 10. In this embodiment, the maximum diameter of the conductive material 14 such as conductive coarse particles is about 10
Since it is less than μm, the division width is 4 so that the depth of the concave portion is at least 20 μm or more, taking into account the division accuracy.
It was set to 0 μm or less.

FIG. 5 shows the reason why the anisotropic conductive resin adhesive is used for bonding the metal thin film and the metal foil in the manufacturing process of the semiconductor light emitting device.

FIG. 5 (a) is a cross-sectional view of the case where the metal thin film and the metal foil are adhered using a conductive brazing material or resin adhesive, and FIG. 5 (b) is a metal using the anisotropic conductive resin adhesive. It is sectional drawing at the time of adhering a thin film and a metal foil.

As is apparent from the figure, when the metal thin film 5 and the metal foil 7 are bonded to each other, if a conductive brazing material or resin adhesive 19 or anisotropic conductive resin adhesive 9 is applied onto the metal thin film 5, A part of these flows into the groove 18. Since the end face where the PN junction is exposed is formed on the side surface of the groove portion 18, if a conductive brazing material or resin adhesive 19 adheres to this portion, a short circuit or a leakage current may occur at the end face where the PN junction is exposed. The semiconductor light emitting device will not operate normally.

However, in the case of the anisotropic conductive resin adhesive 9, since the groove 18 is not loaded, the conductive substances 14 hardly contact with each other and are dispersed in the resin 15 so that the insulating property is improved. Since it behaves as a resin adhesive, no short circuit or leakage current occurs at the end face where the PN junction is exposed.

FIG. 6 is a view for explaining a method of mounting a semiconductor light emitting device in the first embodiment of the present invention, in the case where it is connected to a base such as an insulating substrate or a lead frame using an anisotropic conductive resin adhesive. FIG.

As shown in FIG. 6, a liquid translucent epoxy resin such as "Morfit TG-9000R" manufactured by Hysole Co., Ltd. or a similar product is used for the electrode portions 20 and 21 of the substrate such as the insulating substrate or the lead frame. An anisotropic conductive resin adhesive 9 ″ such as a resin material mixed with several to several tens wt% of conductive coarse particles (particle size: about 10 μm or less) is applied (film thickness: about several to 10 μm).

Next, with respect to the electrode portions 20 and 21 of the substrate such as the insulating substrate or the lead frame, the P / N electrode layer 1 is formed.
The semiconductor light emitting element 1 is mounted so that 1 and 12 are in contact with each other in the vertical direction.

Finally, the anisotropic conductive resin adhesive 9 ″ is cured while applying a load (about 2 to 20 kg / cm ² , applying pressure from the direction shown by the arrow in the figure) from the upper surface of the semiconductor light emitting device 1. The curing conditions differ depending on the type of the anisotropic conductive resin adhesive 9 ″, but the one used in this example has a temperature of 150 ° C.
2 minutes to 200 ° C.-30 seconds.

As a result, between the P and N electrode layers 11 and 12 which are hardened under the load and the electrode portions 20 and 21 of the substrate such as the insulating substrate or the lead frame, the individual conductive substances sandwiched therebetween are provided. Conduction is created because the 14 "are in direct contact.

On the other hand, the anisotropic conductive resin adhesive 9 ″ on the other portions is cured without being loaded, so that the conductive substances 14 ″ hardly contact each other, and the resin 1
Since it is dispersed in 5, it behaves as an insulating resin adhesive.

However, even in this case, if the gap between the adhered surfaces is smaller than the maximum diameter of the conductive material 14 ″, the conductive material 14 ″ may cause conduction between the adhered surfaces. Since the PN junction and the vicinity 13 of the element 1 are formed in a concave shape, a conductive state due to the conductive substance 14 ″ does not occur at the end face where the PN junction is exposed.

In the above-described first embodiment of the present invention, the PN junctions on all four surfaces and the vicinity thereof are formed in a concave shape, but when connecting the semiconductor light emitting element to a base such as an insulating substrate or a lead frame. It suffices that at least one of these surfaces facing the electrode direction is formed in a concave shape.

Further, these shapes do not necessarily have to be concave, and the anisotropic conductive resin adhesive is a conductive resin adhesive at a position where the electrode layer of the semiconductor light emitting element is bonded to a base such as an insulating substrate or a lead frame. The anisotropic conductive resin adhesive behaves as an insulative resin adhesive on the other adhering surface, especially on the end face where the PN junction is exposed.

Next, another embodiment of the present invention will be described with reference to the drawings.

In the drawings, the same reference numerals are given to the same materials, shapes and the like as those of the first embodiment of the present invention, and the detailed description thereof will be omitted.

FIG. 7 is a perspective view of a semiconductor light emitting device formed according to another embodiment of the present invention, FIG. 8 (a) is a sectional view taken along the line BB 'in FIG. 1, and FIG. 8 (b) is a top view. , (C)
Is a bottom view.

This embodiment is different from the above-described embodiment in that the P / N electrode layers 11 'and 12' are made of metal thin films 5 and 6 and a conductive brazing material or resin adhesive 19 ', 19 ". And that the end surface of the PN junction and its vicinity 13 is covered with an insulating material 22.

That is, the structure of the semiconductor light emitting device 23 of this embodiment is as follows. First, on the N-type semiconductor layer 2 made of a semiconductor material such as a III-V group compound semiconductor, a II-VI group compound semiconductor, or SiC, the same III A P-type semiconductor layer 3 made of a semiconductor material such as a group-V compound semiconductor, a group II-VI compound semiconductor, or SiC is laminated.

Next, metal thin films 5 and 6 made of, for example, Ag or Au, and a conductive brazing material made of metal such as indium, or A, are formed on the entire surfaces of both end surfaces parallel to the PN junction surface 4.
Conductive resin adhesives 19 'and 19 "made of u-epoxy resin, Ag-epoxy resin or the like are sequentially laminated to form a P electrode layer 11' and an N electrode layer 12 '. The film thickness of the resin adhesives 19 ′ and 19 ″ is set to at least 20 μm or more, preferably 30 to 100 μm, in consideration of the mounting state in the subsequent steps.

The PN junction portion and its vicinity 13 are formed in a concave shape so as to be located at a position lower than the peripheral surface thereof, and the concave portion is formed of, for example, a liquid epoxy resin (bisphenol A type epoxy resin). : 40 to 70
Parts by weight, phenol novolac type epoxy resin: 10 to 30 parts by weight, silica fine particles: 0 to 50 parts by weight, modified urea resin: mixture of 1 to less than 5 parts by weight, etc.) It is covered.

In this embodiment, the insulating substance is formed of an organic material such as liquid epoxy resin, but S _i O ₂ or Al ₂ O is used.
_It may be formed by using an inorganic material such as ₃ by a method such as vapor deposition, sputtering or spin coating.

Next, a method of manufacturing a semiconductor light emitting device according to another embodiment of the present invention will be described in detail.

9A to 9I are procedural diagrams showing a method for manufacturing a semiconductor light emitting device using this embodiment.

Since FIGS. 9A and 9B show the same steps as FIGS. 4A and 4B described in the first embodiment of the present invention, only the drawing numbers are shown in the drawings. The description is omitted.

After the surface of the groove 18 is chemically treated, the semiconductor light emitting device 23 'in a wafer state is formed on the surface of the metal thin film 5 on the P-type semiconductor layer 3 side as shown in FIG. 9C. Within a slightly small area, a conductive brazing material made of metal such as indium or a conductive resin adhesive made of Au-epoxy resin, Ag-epoxy resin, etc. 1
9 is applied. At this time, if the film thickness of the conductive brazing material or the resin adhesive 19 is too thin, workability in the subsequent process is deteriorated, and conversely, if it is thick, stress fracture or the like occurs at the time of curing. It is set between 150 μm.

In the above-mentioned state, the conductive brazing material or resin adhesive 19 is still in an uncured state, and it is necessary to subsequently cure this to cure and fix it on the surface of the metal thin film 5.

Therefore, as shown in FIG. 9D, a predetermined curing condition (the curing condition varies depending on the type of the conductive brazing material or the resin adhesive 19 is 150 in the present embodiment). (° C-1 to 2 hours or equivalent)
Then, the metal thin film 5 is cured and fixed.

Next, as shown in FIG. 9E, for example, liquid epoxy resin (bisphenol A type epoxy resin: 40 to 7) is formed in a plurality of two kinds of vertical groove portions 18 that intersect each other vertically.
0 parts by weight, phenol novolac type epoxy resin: 10
To 30 parts by weight, fine silica particles: 0 to 50 parts by weight, modified urea resin: mixture of 1 to less than 5 parts by weight) and the like, and an insulating substance 22 of an organic material is applied. The amount of the insulating material 22 applied at this time is about 5 to 20 μm on the groove 18 so as not to overflow onto the surface of the conductive brazing material or resin adhesive 19 which is cured and fixed on the surface of the metal thin film 5. To be When applying the insulating substance 22, for example, the viscosity of the insulating substance 22 is set to 10 po so that no bubbles are present therein.
It is necessary to keep the pressure below ise ( ¹ poise = 10 ^-1 N · s / m ² ) or to perform vacuum defoaming after coating.

The insulating substance 22 has a predetermined curing condition after coating and defoaming (the curing condition is different depending on the type of the insulating substance 22, but in the case of this embodiment, the temperature is 130 ° C. or lower, preferably 100 ° C. Groove part 18 at ℃ -4 to 8 hours)
Cure and fix to.

When the insulating material 22 is hardened, the groove 18 becomes too deep, and as the hardening temperature of the insulating material 22 rises, the insulating material 22 hardens and shrinks, so that the semiconductor light emitting element 23 'in a wafer state is warped. Since these occur and interfere with the subsequent processes, these parameters including the curing performance of the insulating material 22 (in this embodiment, it depends on the components and compositions of the resin contained) should be carefully adjusted according to the individual case. It is essential to choose. For example, in this embodiment, the groove 18 has a depth of 100
It is better to keep the curing temperature of the insulating material 22 at 120 ° C. or less within μm.

In this embodiment, the insulating substance 22 is made of an organic material such as liquid epoxy resin, but S _i O ₂ or Al ₂ O is used.
_It may be formed of an inorganic material such as ₃ . In this case, a technique such as vapor deposition, sputtering or spin coating is used.

Next, as shown in FIG. 9 (f), a conductive brazing material or resin adhesive 19 formed on the surface of the metal thin film 5 on the P-type semiconductor layer 3 side is applied, and its thickness is 20 To 50μ
For example, sandpaper (count: # 800)
To about # 2000).

Further, as shown in FIG. 9 (g), a conductive brazing material or resin adhesive 19 ', 19 "is applied to both front and back surfaces of the semiconductor light emitting device 23' in a wafer state.

Then, as shown in FIG. 9 (h), for example, 1
It is cured under the curing conditions of 10 ° C-4 to 8 hours or 150 ° C-1 to 2 hours, and the film thickness is at least 20 μm or more, preferably 30 to 100 μm.
-Form electrode layers 11 'and 12' on both sides of N. The reason is that when the thickness of the electrode layers 11 'and 12' is 20 μm or less, sufficient electrical continuity cannot be obtained with the electrode portion of the base body such as the insulating substrate or lead frame, and conversely, when the thickness is 100 μm or more, stress is applied. This is because breakage and electrode peeling are likely to occur. The above conduction can be obtained when the film thickness is 20 μm or more, but it is more reliable when the film thickness is 30 μm or more. If the film thickness is up to about 150 μm, the frequency of occurrence of the above defects in the present invention is not so high.

Finally, as shown in FIG. 9 (i), a plurality of vertically intersecting parallel groove portions 18 filled with the insulating material 22 are formed by using, for example, a diamond blade or the like.
The semiconductor light emitting device 23 'in a wafer state is divided into individual chip-shaped semiconductor light emitting devices 23 along the center of (width: about 50 to 80 μm). At this time, in consideration of dielectric breakdown or the like, the insulating material 2 formed on the end face where the PN junction is exposed
It is necessary to set the division width so that the film thickness of 2 is at least the distance at which dielectric breakdown or the like occurs. In the present embodiment, the division width is set so that the film thickness of the insulating material 22 formed on the end surface where the PN junction is exposed is at least 5 μm or more in consideration of division accuracy and the like, and the groove portion 18 (width: about 50 to 8
0 μm) and at least 10 μm or more, preferably about 20
It must be set to a narrower μm.

FIGS. 10A to 10C are views for explaining a method of mounting a semiconductor light emitting device in another embodiment of the present invention.

In FIG. 10A, the distance x ₁ between the electrode portions of the substrate such as the insulating substrate or the lead frame is defined as P of the semiconductor light emitting element.
-It shows the mounting method when the distance between the N electrode layers is narrower.

First, an insulating adhesive 24 is applied in advance between the electrode portions 20 and 21 of a substrate such as an insulating substrate or a lead frame in order to prevent positional deviation during conductive bonding of the semiconductor light emitting element 23.

Next, a metal-based conductive brazing material such as indium or a conductive resin adhesive 19 such as Ag-epoxy resin is preliminarily provided on the electrode portions 20 and 21 of the substrate such as the insulating substrate or the lead frame. After coating, the semiconductor light emitting device 2
The P and N electrode layers 11 'and 12' of No. 3 are placed on the electrode portions 20 and 21 of the substrate such as the insulating substrate or the lead frame, and the conductive brazing material or the resin adhesive 19 is hardened. The curing conditions differ depending on the type of the conductive brazing material or the resin adhesive 19, but in the case used in this embodiment, it is, for example, 110 ° C. for 4 to 8 hours or 150 ° C. for 1 to 2 hours or a corresponding condition.

In this embodiment, the PN junction portion of the mounting surface of the semiconductor light emitting element 23 and its vicinity 13 are covered at their end faces with the insulating material 22, so that a conductive brazing material or resin generated during mounting is used. A defect such as a short circuit, a scratch or a breakage at the end face where the PN junction is exposed due to the wraparound of the adhesive 19 is eliminated.

In FIG. 10B, the distance x ₂ between the electrode portions of the substrate such as the insulating substrate or the lead frame is represented by P of the semiconductor light emitting device.
-The figure shows the mounting method when the distance between the N electrode layers is wider. The basic mounting method and conditions are shown in Fig. 10 above.
Same as (a).

First, in order to prevent positional displacement during conductive bonding of the semiconductor light emitting element 23, an insulating adhesive 24 is applied in advance between the electrode portions 20 and 21 of the substrate such as an insulating substrate or lead frame. The P and N electrode layers 11 'and 12' of the semiconductor light emitting device 23 are mounted and fixed on the electrode portions 20 and 21 of the base such as an insulating substrate or a lead frame.

Next, in order to electrically connect the semiconductor light emitting element 23 and the electrode portions 20 and 21 of the base body such as the insulating substrate or the lead frame, a conductive brazing material or Ag-epoxy resin made of metal such as indium is used. The conductive resin adhesive 19 such as the above is applied and then cured. The curing conditions differ depending on the type of the conductive brazing material or the resin adhesive 19, but in the case used in this embodiment, it is, for example, 110 ° C. for 4 to 8 hours or 150 ° C. for 1 to 2 hours or a corresponding condition.

In this embodiment, both the P and N electrode layers 11 'and 1
2'is a conductive brazing material or resin adhesive 19 ', 19 "of the same material as the conductive brazing material or resin adhesive 19 for mounting.
Since it is formed in advance, the familiarity between the conductive brazing material or resin adhesive 19 for mounting and the P / N both electrode layers 11 ', 12' is larger than that of the one mounted in the conventional example. Greatly improved.

FIG. 10C is a cross-sectional view of the case where an anisotropic conductive resin adhesive is used to connect to an insulating substrate or a substrate such as a lead frame.

As shown in FIG. 10, the electrode parts 20, 21 of the substrate such as the insulating substrate or the lead frame are made of liquid translucent epoxy resin such as "Morfit TG-9000R" manufactured by Hysole Co. or the like. An anisotropic conductive resin adhesive 9 ″ such as a resin material containing conductive coarse particles (particle size: about 10 μm or less) of 10 to several wt% is applied (film thickness: about several to 10 μm).

Next, with respect to the electrode portions 20 and 21 of the substrate such as the insulating substrate or the lead frame, the P / N electrode layer 1 is formed.
The semiconductor light emitting element 23 is mounted so that 1'and 12 'are in contact with each other in the vertical direction.

Finally, the anisotropic conductive resin adhesive 9 ″ is cured while applying a load (about 2 to 20 kg / cm ² , pressure is applied in the direction shown by the arrow in the figure) from the upper surface of the semiconductor light emitting element 23. The curing conditions differ depending on the type of the anisotropic conductive resin adhesive 9 ″, but the one used in this example has a temperature of 150 ° C.
-2 minutes to 200 ° C.-30 seconds.

As a result, the individual conductive layers sandwiched between the P and N electrode layers 11 'and 12' cured by the load and the electrode portions 20 and 21 of the substrate such as the insulating substrate or the lead frame. Conductivity is created because the material 14 "is in direct contact.

On the other hand, the anisotropic conductive resin adhesive 9 ″ on the other portions is cured without being loaded, so that the conductive substances 14 ″ hardly contact each other and the resin 1
Dispersed in 5 and behaves as an insulating resin adhesive.

However, even in this case, if the gap between the surfaces to be adhered is smaller than the maximum diameter of the conductive substance 14 ″, conduction may occur due to the conductive substance 14 ″. The joint portion and its vicinity 13 are covered with the insulating substance 22 with a film thickness equal to or higher than the withstand voltage,
The end face where the PN junction is exposed does not come into contact with the conductive material 14 ″, so that no conduction state occurs.

In this embodiment, the anisotropic conductive resin adhesive 9 "is used.
Also serves as an insulative adhesive for fixing the semiconductor light emitting element 23, and thus the insulative adhesive that has been conventionally used for the purpose of preventing misalignment when the semiconductor light emitting element 23 is electrically conductively bonded, protecting the exposed PN junction, and the like. Becomes unnecessary.

In the other embodiment of the present invention described above, the PN junctions on all four surfaces and their vicinity are formed in a concave shape, and all of these portions are filled with an insulating material. When connecting the light emitting element to a base such as an insulating substrate or a lead frame, at least one surface facing the electrode direction is formed in a concave shape, and only this portion is filled with an insulating material. Good. Also, multiple P
Even when the N-junction portion and its vicinity are formed in a concave shape, when connecting the semiconductor light-emitting element to a base such as an insulating substrate or a lead frame, at least they oppose to the electrode direction.
The structure may be such that only the surface is filled with the insulating material.

Furthermore, these shapes do not necessarily have to be concave, and if the end surface of the semiconductor light emitting device where the PN junction is exposed can be covered with an insulating material, then the insulating substrate or the end surface where the PN junction is exposed can be used. Any processing shape / process may be used so that the insulating material can be formed into a flat shape on the end surface of the lead frame or the like that faces the substrate.

[0133]

EFFECTS OF THE INVENTION According to the present invention, (1) of the end faces of the semiconductor layer of the semiconductor light emitting element, which are perpendicular to the PN junction face, exposed at least on one end face and the vicinity thereof are the peripheral vertical end faces. Since it is formed so as to be located at a position lower than that, or is formed in a concave shape, it is generated in the PN junction portion exposed on the end face of the semiconductor light emitting element and its vicinity when mounted on an insulating substrate or a lead frame or the like. Scratches and damages are prevented.

Therefore, the work is facilitated, the productivity and the yield are improved, and the cost can be reduced, so that the inexpensive product can be supplied.

(2) Since the PN junction part exposed on at least one end face of the semiconductor layer of the semiconductor light emitting element, which is perpendicular to the PN junction face, and its vicinity are formed of an insulating material, the insulating substrate or When the PN junction is exposed on the end face of the semiconductor light emitting device when mounted on a lead frame or the like, and there is a short circuit of the PN junction due to the wraparound of the conductive brazing material or the resin adhesive, a defect such as a scratch or a damage. Lost.

Alternatively, the end face formed of an insulating material is
Since it has the same surface as the end surface perpendicular to the PN junction surface, the end surface has stability when mounted on an insulating substrate, a lead frame, or the like, and the semiconductor light emitting element can be mounted easily.

Further, the insulating material is transparent to the light emitted from the semiconductor light emitting element and is selected from organic materials such as epoxy resin and phenol resin and inorganic materials such as SiO ₂ and Al ₂ O _3. Since it uses different materials, the light utilization efficiency does not decrease.

Therefore, the work is facilitated, the productivity, the reliability and the yield are improved and the cost can be reduced.
It becomes possible to supply inexpensive products.

(3) The semiconductor layer of the semiconductor light emitting device is III
-Since it can be created by arbitrarily selecting from semiconductor materials such as group V compound semiconductors, II-VI group compound semiconductors, and SiC, color display devices using semiconductor light emitting elements of different emission colors are easy. Can be manufactured.

Therefore, it becomes possible to develop a display device having a commercial value equal to or higher than that of a cathode ray tube or a liquid crystal monitor.

(4) The electrode layer formed on the semiconductor layer of the semiconductor light emitting device is formed by a combination of a metal thin film and a conductive brazing material or a resin adhesive, or is anisotropic from the metal thin film. Since it is formed by the combination of the conductive resin adhesive and the metal foil, the electrode layer can be easily formed, and the semiconductor layer of the semiconductor light emitting element due to the difference in stress between the semiconductor layer and the electrode layer at the time of forming the electrode layer The occurrence of breakage and peeling of the electrode layer is eliminated.

Further, since the film thickness of the electrode layer is suppressed to 150 μm or less, problems such as stress destruction and electrode peeling can be prevented.

Alternatively, by setting the lower limit of the film thickness to at least 20 μm or more, it is possible to secure sufficient conduction without hindering the driving at the time of mounting.

Therefore, since the process is simplified, the productivity,
Since reliability and yield are improved and cost can be reduced, inexpensive products can be supplied.

Alternatively, since the electrode layer of the semiconductor light emitting element is arranged so as to be perpendicular to the substrate such as the insulating substrate or the lead frame, there is no electrode layer for blocking the emitted light, and the light utilization efficiency is high. In addition, since the entire surface of the electrode layer is connected with a conductive brazing material, a resin adhesive, or an anisotropic conductive resin adhesive, effective heat dissipation is performed and luminous efficiency is increased. Further, it is not necessary to connect with the substrate electrode portion by Au wire or the like, and it is possible to reduce the process and working time, the material cost, and the size.

Further, when the electrode layer of the semiconductor light emitting element is connected to a base such as an insulating substrate or a lead frame using a conductive brazing material or resin adhesive, the material forming the electrode layer and the electrode portion of the base Since and are made of the same material, they are well compatible.

Alternatively, when the electrode layer of the semiconductor light emitting element is connected to a base such as an insulating substrate or a lead frame by using an anisotropic conductive resin adhesive, connection in a minute range is possible and mounting dimensions are Further miniaturization becomes possible.

Further, since the anisotropic conductive resin adhesive serves both as an insulating adhesive for fixing the semiconductor light emitting element to the insulating substrate or a base body such as a lead frame and for protecting the end face of the exposed PN junction, it has been conventionally required. There is no need for the temporary fixing process.

Therefore, it is possible to supply a semiconductor light emitting element which is small in size, has high light utilization efficiency, and is highly reliable, at a low price.

(5) The external dimensions of the semiconductor light emitting device are 50
Since it can be formed with a minute dimension of 0 μm square or less, a high-resolution display device using this can be constructed.

Therefore, it is possible to obtain a display device having a performance equivalent to that of a cathode ray tube, a liquid crystal display, etc., and being thin, high-definition, and low-priced.

(6) The maximum diameter of the conductive component contained in the anisotropic conductive resin adhesive is such that the PN junction exposed on at least one of the end faces of the semiconductor layer perpendicular to the PN junction face and the vicinity thereof. Since it is designed to be smaller than the step between the peripheral vertical end face, the anisotropic conductive resin adhesive that wraps around other than the connection portion between the semiconductor light emitting element and the base such as the insulating substrate or the lead frame. However, even if it adheres to the PN junction and its vicinity, abnormal driving of the semiconductor light emitting element due to a short circuit, a leakage current, or the like at the end face where the PN junction is exposed does not occur.

Therefore, it is possible to supply a semiconductor light emitting device with higher reliability.

(7) In the method for manufacturing a semiconductor light emitting device, the step of forming a groove portion at least reaching the PN junction surface in the semiconductor layer, the step of forming electrode layers on both sides of the semiconductor layer, the semiconductor layer and both electrodes Cut the layer along the groove,
Since it has a step of separating, the PN junction portion exposed on the end face of the semiconductor light emitting element and the shape in the vicinity thereof can be easily processed and formed, and further, an electrode layer having a relatively thick thickness is formed on the upper surface. Since it can be formed at the same time as the bottom surface, warpage is unlikely to occur.

Alternatively, in the method for manufacturing a semiconductor light emitting device, a step of forming a groove portion at least reaching the PN junction surface in the semiconductor layer, a step of covering the groove portion with an insulating material, and electrode layers on both sides of the semiconductor layer are provided. Forming step, cutting the semiconductor layer and both electrode layers along the covered groove portion,
In the case of having a step of separating, in addition to the above action,
The PN junction and its vicinity can be easily protected.

Therefore, the workability in the manufacturing process is improved, the process is simplified, and the yield and reliability of products are improved.

[Brief description of drawings]

FIG. 1 is a perspective view of a semiconductor light emitting device according to a first embodiment of the present invention.

2A is a sectional view taken along the line AA ′ in FIG. 1, FIG. 2B is a top view, and FIG. 2C is a bottom view.

3A and 3B are cross-sectional views of a semiconductor light emitting device for explaining the function of an anisotropic conductive resin adhesive.

4A to 4F are procedure diagrams showing a method for manufacturing a semiconductor light emitting device according to the first embodiment of the present invention.

5A and 5B are cross-sectional views of a semiconductor light emitting device for explaining the reason why an anisotropic conductive resin adhesive is used during a process.

FIG. 6 is a sectional view of a semiconductor light emitting device showing a method for mounting the semiconductor light emitting device according to the first embodiment of the present invention.

FIG. 7 is a perspective view of a semiconductor light emitting device according to another embodiment of the present invention.

8A is a sectional view taken along the line BB ′ in FIG. 7, FIG. 8B is a top view, and FIG. 8C is a bottom view.

9A to 9I are procedural diagrams showing a method for manufacturing a semiconductor light emitting device according to another embodiment of the present invention.

10A to 10C are cross-sectional views of a semiconductor light emitting device showing a method for mounting a semiconductor light emitting device according to another embodiment of the present invention.

FIG. 11 is a perspective view of a conventional semiconductor light emitting device.

12A is a sectional view taken along the line CC ′ in FIG. 11, FIG. 12B is a top view, and FIG. 12C is a bottom view.

FIG. 13 is a sectional view of a semiconductor light emitting device showing a method for mounting a semiconductor light emitting device according to a conventional example.

14A and 14B are cross-sectional views showing a structure of a semiconductor light emitting element in the form of a chip component according to a conventional example.

FIG. 15 is a perspective view of a semiconductor light emitting device according to another conventional example.

16A is a sectional view taken along line DD ′ in FIG. 15, FIG. 16B is a top view, and FIG. 16C is a bottom view.

17A and 17B are cross-sectional views of a semiconductor light emitting device showing a mounting method of a semiconductor light emitting device according to another conventional example.

[Explanation of symbols]

1, 23 Semiconductor light emitting element 2, 3 (N-type or P-type) semiconductor layer 4 PN junction surface 5, 6 Metal thin film 7, 8 Metal foil 9, 9 ', 9 ", 10 Anisotropic conductive resin adhesive 11 , 11 ', 12, 12' (N or P) electrode layer 13 PN junction part and its vicinity 14, 14 ', 14 "conductive material 18 groove part 19, 19', 19" conductive brazing material or resin adhesive 20, 21 Insulating substrate or electrode portion of a base such as lead frame 22 Insulating material

Claims (16)

[Claims] 1. A semiconductor light-emitting device comprising: stacked semiconductor layers having a PN junction; and electrode layers sandwiching the semiconductor layers, wherein at least one end face of the semiconductor layers is perpendicular to the PN junction face. 2. A semiconductor light emitting device, wherein the PN junction portion exposed above and its vicinity are formed at a position lower than the surrounding vertical end face. 2. A PN junction part exposed on at least one end face of the end face perpendicular to the PN junction face and the vicinity thereof,
The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting device is formed in a concave shape. 3. A semiconductor light-emitting device comprising a semiconductor layer having a PN junction, which is laminated, and electrode layers sandwiching the semiconductor layer, wherein at least one end face of the semiconductor layer is perpendicular to the PN junction face. A semiconductor light emitting device characterized in that the PN junction portion exposed above and the vicinity thereof are formed of an insulating material. 4. The semiconductor light emitting device according to claim 3, wherein an end surface formed of the insulating material has the same surface as an end surface perpendicular to the PN junction surface. 5. The insulating material is transparent to the emitted light of the semiconductor light emitting element and is an organic material such as an epoxy resin or a phenol resin or an inorganic material such as SiO ₂ or Al ₂ O _3. The semiconductor light emitting device according to claim 3, wherein the semiconductor light emitting device is a substance selected from the group consisting of: 6. The semiconductor layer according to claim 1 or 3, wherein the semiconductor layer is a substance selected from semiconductor materials such as III-V group compound semiconductors, II-VI group compound semiconductors, and SiC. Semiconductor light emitting device. 7. The semiconductor light emitting device according to claim 3, wherein the electrode layer is formed of a combination of a metal thin film and a conductive brazing material or a resin adhesive. 8. The semiconductor light emitting device according to claim 1, wherein the electrode layer is formed by a combination of a metal thin film, an anisotropic conductive resin adhesive and a metal foil. 9. The electrode layer has a thickness of 20 to 150 μm.
9. The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting device is between m. 10. The semiconductor light emitting device according to claim 1, wherein the electrode layer of the semiconductor light emitting device is arranged so as to be perpendicular to a substrate such as an insulating substrate or a lead frame. element. 11. The semiconductor light emitting device according to claim 3, wherein the electrode layer of the semiconductor light emitting device is connected to the base such as the insulating substrate or the lead frame by using a conductive brazing material or a resin adhesive. The semiconductor light-emitting device as described above. 12. The electrode layer of the semiconductor light emitting device is connected to a base such as the insulating substrate or a lead frame by using an anisotropic conductive resin adhesive. Semiconductor light emitting device. 13. The semiconductor light emitting device has an outer dimension of 5
2. The size is less than 00 .mu.m square.
2. The semiconductor light emitting device according to item 2. 14. The maximum diameter of a conductive component contained in the anisotropic conductive resin adhesive is a PN junction portion exposed on at least one end face of an end face perpendicular to the PN junction face of the semiconductor layer, and a portion thereof. 13. The semiconductor light emitting device according to claim 8, which is smaller than a step between the vicinity and the vertical end face around the periphery. 15. A method for manufacturing a semiconductor light-emitting device, comprising: forming semiconductor layers having a PN junction in a stacked manner, and forming electrode layers with the semiconductor layers sandwiched therebetween, wherein a groove portion reaching at least a PN junction surface in the semiconductor layer. And a step of forming electrode layers on both surfaces of the semiconductor layer, and a step of cutting and separating the semiconductor layer and both electrode layers along the groove portion. Method for manufacturing light emitting device. 16. A method of manufacturing a semiconductor light-emitting device, comprising: forming semiconductor layers having a PN junction in a stacked manner, and forming electrode layers with the semiconductor layers sandwiched therebetween, wherein a groove portion reaching at least a PN junction surface is formed in the semiconductor layer. A step of forming, a step of covering the groove portion with an insulating material, a step of forming electrode layers on both surfaces of the semiconductor layer, and the semiconductor layer and both electrode layers along the covered groove portion. A step of cutting and separating the semiconductor light emitting element.