JP3299839B2 - Method for manufacturing semiconductor light emitting device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ultra-small, high-performance semiconductor light emitting device and a method of manufacturing the same, and more particularly, to a thinner, higher-definition device having the same performance as a cathode ray tube or a liquid crystal display. the method for manufacturing a semiconductor light emitting element that can adopt a low-cost display device.

[0002]

2. Description of the Related Art As shown in FIGS. 11 and 12, a conventional semiconductor light emitting device 101 has a structure in which a P-type semiconductor layer made of GaP or GaAs is formed on an N-type semiconductor layer 102 made of GaP or GaAs. After laminating 103, a metal thin film made of Ag, Au, or the like is sequentially laminated on both end surfaces parallel to the PN junction surface 104 to form a P electrode layer 111 and an N electrode layer 112.
Are formed.

As shown in FIG. 13, a mounting method for forming a display device or the like using the above semiconductor light emitting device is as follows. First, a first electrode portion 120 provided on an insulating substrate or a lead frame and a semiconductor light emitting device 101 are provided. The N electrode layer 112 is made of a conductive brazing material made of a metal such as indium or a conductive resin adhesive 119 such as an Ag-epoxy resin.
The semiconductor light emitting device 101
The P electrode layer 111 is electrically connected to a second electrode portion 121 provided on an insulating substrate or a lead frame by a metal wire 125 such as a fine Au wire.

Alternatively, when the semiconductor light emitting device is formed as individual chip components, and the chip components are mounted on an insulating substrate to form a display device or the like, the structure of the semiconductor light emitting device 101 is as shown in FIG. Metal lead frame 1
26, or after being mounted on an insulating substrate 128 having circuit wiring, it is sealed with a light-transmitting resin 127, 129 to form.

[0005] In addition to the above-mentioned conventional techniques, other conventional semiconductor light-emitting devices having different shapes and mounting methods and methods of manufacturing the same have been devised.

Another conventional semiconductor light emitting device 130
The structure of GaP or GaAs is shown in FIGS.
After a P-type semiconductor layer 103 also made of GaP or GaAs is formed on the N-type semiconductor layer 102 made of, for example, a metal such as Ag or Au over the entire end faces parallel to the PN junction surface 104. The P electrode layer 11 is formed by sequentially laminating thin films.
1 'and an N electrode layer 112' are formed.

As shown in FIG. 17, a mounting method for forming a display device or the like using a semiconductor light emitting device according to the above-mentioned other prior art is to firstly prevent a displacement of the semiconductor light emitting device 130 during conductive bonding. Then, an insulating adhesive 124 is applied between the electrode portions 120 and 121 such as an insulating substrate or a lead frame in advance. This insulating adhesive may be used to protect the exposed portion of the PN junction on the semiconductor light emitting element mounting surface side.

Next, a conductive brazing material made of a metal such as indium or a conductive resin adhesive 119 of Ag-epoxy resin is applied on the electrode portions 120 and 121 such as an insulating substrate or a lead frame in advance. After the P and N electrode layers 111 'and 112' of the semiconductor light emitting device 130 are respectively placed on the electrode portions 120 and 121 such as an insulating substrate or a lead frame, a conductive brazing material or a resin adhesive 119 is applied to a predetermined position. Cured and formed under curing conditions.

[0009] Incidentally, FIG. 17 (a) P · of the semiconductor light emitting device a distance x ₃ electrode portions such as an insulating substrate or a lead frame
Shows how to implement when taken smaller than the distance N the electrode layers, (b) is, P · N of the semiconductor light emitting element of this distance x ₄
This shows a mounting method in the case where the distance between the two electrode layers is larger than the distance between the two electrode layers.

[0010]

The above-mentioned conventional semiconductor light emitting device has the following problems.

(1) A semiconductor light emitting device as shown in FIGS. 11 and 12 is configured to mainly use radiation emitted in the direction of the P electrode. Therefore, there is a problem that the light use efficiency is poor because the amount of radiated light is reduced by being blocked by the P electrode formed on the surface from which the radiated light is emitted.

(2) When mounting the semiconductor light emitting device shown in FIGS. 11 and 12, it is essential to connect it to the substrate electrode portion by using Au wires or the like as shown in FIG. However, when it is used for a display device or the like, it is necessary to mount a large number of semiconductor light emitting elements.
There were problems such as an increase in the cost of materials such as Au wires.

(3) In the semiconductor light emitting device as shown in FIG. 14, in addition to the above-mentioned problems (1) and (2), the size of each semiconductor light emitting device becomes large, and the minimum required cathode ray tube for a display device. At least 500 μm, equivalent to pixels such as
It is difficult to make the dimensions smaller than a corner. In addition, there is a problem that the semiconductor light emitting element in the form of individual chip parts is very expensive in terms of price.

(4) Since the semiconductor light emitting device as shown in FIGS. 15 and 16 utilizes light emission from the end face where the PN junction is exposed, an electrode layer is formed on the substrate or the like when mounted on the substrate or the like. A step of mounting so as to be in contact in the vertical direction is required. During this step, the end face where the PN junction is exposed is in physical contact with the mounting device, the substrate, or the like. There is a problem that it causes damage and short-circuit failure.

(5) To mount the semiconductor light emitting device of FIGS. 15 and 16 on a substrate or the like, as shown in FIG.
The electrodes need to be connected with a conductive brazing material or a resin adhesive, but the surface of the P electrode and the PN junction surface are separated only by a few to several tens of μm. When the agent goes around between the substrate and the semiconductor light emitting element, a short circuit and a leakage current due to the conductive brazing material or the resin adhesive at the end face where the PN junction is exposed occur,
Therefore, there is a problem that the semiconductor light emitting element does not operate normally.

In addition, the semiconductor light emitting element must be temporarily fixed in advance to the mounting position with an insulating adhesive or the like, which causes a problem that the process becomes complicated and the cost increases.

In the case where the above-mentioned insulating adhesive for fixing is used for protecting the exposed portion of the PN junction, it is difficult to control the amount of application, and the adhesive adheres to the electrode surface formed on the substrate or the like, and the semiconductor light-emitting element is There is a problem that connection with the electrode layer becomes difficult.

In addition, since the compatibility between the metal thin film of the electrode layer of the semiconductor light emitting element and the conductive brazing material or resin adhesive is poor,
There is a problem that a connection failure occurs.

Further, in order to increase the distance between the PN junction surface and the electrode layer, or to ensure connection and alignment with the electrode on the substrate, it is necessary to form the electrode layer as thick as 100 μm or more. However, in this case, as the thickness of the electrode layer increases, the interlayer stress based on the difference between the expansion coefficients of the electrode layer and the semiconductor layer increases, resulting in stress destruction of the semiconductor layer and peeling of the electrode layer. And so on.

On the other hand, if the electrode layer is formed as thin as 20 μm or less, there is also a problem that the connection with the electrode cannot be made sufficiently and the conduction cannot be obtained.

[0021]

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and is directed to a method of manufacturing a semiconductor light emitting device.
Forming a metal thin film on and / or below the semiconductor layer having a PN junction; disposing a metal foil on the metal thin film via an anisotropic conductive resin adhesive; ,
And a groove portion reaching the PN junction is formed in advance in the semiconductor layer covered with the metal thin film forming the anisotropic conductive resin adhesive. Previous
By dividing into chips along the approximate center of the groove
And forming a semiconductor light emitting device having a concave depression.
Sign.

[0022]

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[0027]

[0028]

[0029]

[0030]

[0031]

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[0034]

[0035]

[0036]

According to the present invention , an anisotropic conductive resin contacting a metal thin film is provided .
In the step of arranging the metal foil via the adhesive and curing under pressure ,
The PN junction portion is the groove, that Do is possible to prevent the occurrence of short circuit and leakage current.

[0037]

[0038]

[0039]

[0040]

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[0042]

[0043]

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[0051]

[0052]

An embodiment of the present invention will be described with reference to the drawings.

Although the present invention has been described with a structure in which the PN junction surface is close to the P-type electrode layer side, the structure may be conversely close to the N-type electrode layer side.

The semiconductor light emitting device of the present invention is actually formed in a single large wafer in consideration of mass productivity, and then divided into individual semiconductor light emitting devices.

When each semiconductor light emitting element is used for a display device, it is necessary to have the same external dimensions as a pixel such as a cathode ray tube, and various conditions are set so that the individual semiconductor light emitting elements can be formed with dimensions of at least 500 μm square or less. I have.

[0056] Figure 1 is a perspective view of a semiconductor light emitting device formed in a real施例of the present invention, FIG. 2 (a) is sectional view of the A-A 'portion in FIG. 1, (b) is a top view, (C) is a bottom view.

The structure of the semiconductor light emitting device 1 of this embodiment has the structure II
Group IV compound semiconductor, Group II-VI compound semiconductor or Si
On an N-type semiconductor layer 2 made of a semiconductor material such as C 2, a P-type semiconductor layer 3 also made of a semiconductor material such as a III-V compound semiconductor, a II-VI compound semiconductor, or SiC is laminated. .

Next, metal thin films 5, 6 made of, for example, Ag or Au and metal foils 7, 8 made of, for example, Au, Ag, Mo, etc. are anisotropically formed on the entire end faces parallel to the PN junction surface 4. The P electrode layer 11 and the N electrode layer 12 are sequentially laminated with the conductive resin adhesives 9 and 10 interposed therebetween. The film thickness of the metal foils 5 and 6 should be at least 2 in consideration of the mounting state in a later process.
The thickness is set to 0 μm or more, preferably 30 to 150 μm.

The PN junction and its vicinity 13 are formed in a concave shape so as to be lower than the surrounding surface. At this time, the level difference between the PN junction and its vicinity 13 and the surface around the PN junction takes into consideration the mounting state and the like in a later step, and the conductivity of the metal powder and the like contained in the anisotropic conductive resin adhesives 9 and 10 is considered. If the maximum diameter of the conductive material 14 is, for example, 5 μm, it is necessary to form the conductive material 14 so as to be at least larger than 5 μm.

Here, the anisotropic conductive resin adhesive used in the present invention will be additionally described below.

FIG. 3 (a) shows a state in which an anisotropic conductive resin adhesive is applied on the electrode layer of the semiconductor light emitting element for the purpose of explanation, a metal foil is further placed thereon, and then cured without load. FIG. 3B is a cross-sectional view showing a state where the resin is cured by applying a load.

The anisotropic conductive resin adhesive 9 ′ is made of a conductive material 14 ′ (granular or scale) in a resin 15 of either a thermoplastic resin, a thermosetting resin or a mixture of both. (A maximum diameter: about several μm to 10 μm) is kneaded in a predetermined amount to have both adhesiveness and conductivity, which is the same as a conductive resin adhesive represented by Ag-epoxy resin or the like.

In the case of these general conductive resin adhesives,
The kneading rate of the conductive substance is as high as about 50 to 90 wt%, and the conductive substances are in contact with each other in the resin. Apparently, the conductive resin adhesive or the cured product itself has a conductivity similar to that of metal (about 5 to 90%). 500 × 10 ⁻⁵ Ω / cm).

On the other hand, anisotropic conductive resin adhesive 9 '
Is to set the kneading rate of the conductive substance 14 'to several to several tens wt% so that the anisotropic conductive resin adhesive 9'
When cured as it is, the conductive substances 14 'hardly come into contact with each other and are dispersed in the resin 15, so that they behave as an insulating resin adhesive.

However, the surfaces 16 and 17 to be bonded such as electrode surfaces
When hardened while applying a load (indicated by an arrow in the figure) so as to press each other, each conductive material 14 ′ has a property of being directly sandwiched between the surfaces 16 and 17 to be bonded to create a conductive state. ing.

However, even in this case, if for some reason the gap between the surfaces 16 and 17 to be bonded is larger than the maximum diameter of the conductive material 14 '(in the case of the portion circled in the figure), such a case is obtained. A conductive state between the adhered surfaces 16 and 17 by the conductive material 14 'does not occur.

Next, will be described in detail a method of manufacturing a semiconductor light-emitting element in the real施例of the present invention.

FIGS. 4A to 4F are process diagrams showing a method for manufacturing a semiconductor light emitting device using this embodiment.

As shown in FIG. 4A, the structure of the semiconductor light emitting device 1 'in a wafer state is an N-type semiconductor made of a semiconductor material such as a III-V compound semiconductor, a II-VI compound semiconductor or SiC. A P-type semiconductor layer 3 made of a semiconductor material such as a III-V compound semiconductor, a II-VI compound semiconductor, or SiC is formed on the layer 2 (layer thickness: about 200 to 300 μm, and a PN junction surface 4 is formed). After about several to several tens of μm from the surface of the P-type semiconductor layer), metal thin films 5 and 6 made of, for example, Ag or Au are formed on the entire end faces parallel to the PN junction surface 4 (layer thickness: about 3 μm). ).

Next, the semiconductor light emitting device 1 'in a wafer state
A plurality of perpendicularly intersecting two types of parallel grooves using, for example, a diamond blade or the like, at a depth from the surface on the P-type semiconductor layer 3 side to the N-type semiconductor layer 2 beyond the PN junction surface 4. 18 are formed. The width of the groove 18 at this time is about 5
The depth is about 50 to 150 μm from the surface on the P-type semiconductor layer 3 side, and the pitch between adjacent grooves is about 200 to 500 μm. Note that these dimensions can be appropriately set in consideration of the external dimensions, mass productivity, and the like of each semiconductor light emitting element finally obtained.

The surface on the side of the P-type semiconductor layer 3 has an apparent shape in which a large number of square pillars stand by the two kinds of parallel grooves 18 which intersect perpendicularly. Here, the pitch of one groove portion and the pitch of the groove portion that intersects perpendicularly with the pitch need not necessarily be the same.

A large number of fine cracks are generated on the surface of the two types of parallel grooves 18 which intersect perpendicularly, and these cracks have an empirical effect on the performance of the semiconductor light emitting device. Is known to.

Therefore, for example, as shown in FIG.
The surface in the groove 18 is subjected to a chemical treatment with an etching solution having a composition of ₂ SO ₄ : H ₂ O ₂ : H ₂ O = 3: 1: 1 to remove fine cracks.

As shown in FIG. 4 (c), the semiconductor light emitting device 1 'in a wafer state after the surface of the groove 18 has been subjected to the chemical treatment is provided on the surface of each of the metal thin films 5 and 6 by, for example, Hysole. Anisotropic conductivity such as resin material, such as "Mofit TG-9000R" or a similar product, in which several to several tens wt% of conductive coarse particles (particle size: about 10 μm or less) are mixed with liquid translucent epoxy resin The resin adhesives 9 and 10 are applied (film thickness: about several to 10 μm).

Further, as shown in FIG. 4 (d), for example, Au, on both surfaces to which the anisotropic conductive resin adhesives 9, 10 have been applied.
Metal foils 7, 8 made of Ag, Mo, etc. are attached. The film thickness of these metal foils 7 and 8 is set to at least 20 μm or more, preferably 30 to 100 μm in consideration of a mounting state in a later step. Because the metal foil 7,
When the film thickness of 8 is 20 μm or less, conduction with an electrode portion of a base such as an insulating substrate or a lead frame cannot be sufficiently obtained. Conversely, when the film thickness is 100 μm or more, stress destruction, electrode peeling, and the like tend to occur. Because. The above conduction has a film thickness of 20 μm
If it is more than the above, it can be obtained. Further, if the film thickness is up to about 150 μm, the frequency of occurrence of the above defects in the present invention is not so high.

In the above state, the anisotropic conductive resin adhesive 9,
10 is still in an uncured state, and it is necessary to cure it and then bond the metal thin films 5, 6 and the metal foils 7, 8 in a conductive state.

Accordingly, as shown in FIG. 4 (e), a load (approximately 2 to 20 kg / cm ² , pressurized in the direction indicated by the arrow in FIG. 4) is applied from both sides of the semiconductor light emitting device 1 'in a wafer state.
While the anisotropic conductive resin adhesives 9 and 10 are cured. The curing conditions vary depending on the type of the anisotropic conductive resin adhesives 9 and 10, but the curing conditions used in this example are 150 ° C.
2 minutes to 200 ° C. for 30 seconds.

Finally, as shown in FIG. 4 (f), using a diamond blade or the like, for example, the wafer is formed along the center of a plurality of two types of parallel grooves 18 (width: about 50 to 80 μm) which intersect perpendicularly. The semiconductor light emitting element 1 'in the state is divided into individual chip-shaped semiconductor light emitting elements 1. At this time, the depth of the concave portion formed in the groove 18 in consideration of the mounting state in a later step and the like is at least set to at least the anisotropic conductive resin adhesive 9,
It is necessary to set the division width so as to be larger than the maximum diameter of the conductive substance 14 contained in 10. In this embodiment, the maximum diameter of the conductive substance 14 such as conductive coarse particles is about 10
μm or less, taking into account the division accuracy, etc., the division width should be 4 so that the depth of the concave portion is at least 20 μm or more.
It was set to 0 μm or less.

FIG. 5 shows the reason why an anisotropic conductive resin adhesive is used for bonding the metal thin film and the metal foil in the process of manufacturing the semiconductor light emitting device.

FIG. 5A is a cross-sectional view of a case where a metal thin film and a metal foil are bonded using a conductive brazing material or a resin adhesive, and FIG. 5B is a cross-sectional view of a metal using an anisotropic conductive resin adhesive. It is sectional drawing in case a thin film and a metal foil are adhered.

As is apparent from the figure, when the metal thin film 5 and the metal foil 7 are bonded, a conductive brazing material or a resin adhesive 19 or an anisotropic conductive resin adhesive 9 is applied onto the metal thin film 5. Some of these flow into the groove 18. Since the end face where the PN junction is exposed is formed on the side face of the groove portion 18, if a conductive brazing material or a resin adhesive 19 adheres to this portion, a short circuit or a leakage current occurs at the end face where the PN junction is exposed. The semiconductor light emitting element does not operate normally.

However, in the case of the anisotropic conductive resin adhesive 9, since no load is applied to the groove 18, the conductive substances 14 hardly come into contact with each other and are dispersed in the resin 15. Since it behaves as a resin adhesive, no short circuit or leakage current occurs at the end face where the PN junction is exposed.

[0083] Figure 6 is a view for explaining a mounting method of a semiconductor light-emitting device in the real施例of the present invention, cross-section when connected to the insulating substrate or substrate such as a lead frame using the anisotropic conductive resin adhesive FIG.

As shown in FIG. 6, for example, a liquid translucent epoxy resin such as "Morfit TG-9000R" manufactured by Hysole or a similar product is applied to the electrode portions 20 and 21 of a base such as an insulating substrate or a lead frame. An anisotropic conductive resin adhesive 9 ″ such as a resin material containing several to several tens wt% of conductive coarse particles (particle size: about 10 μm or less) is applied (film thickness: about several to 10 μm).

Next, the P and N electrode layers 1 are applied to the electrode portions 20 and 21 of a base such as an insulating substrate or a lead frame.
The semiconductor light emitting element 1 is mounted so that the semiconductor light emitting devices 1 and 12 are in contact with each other in the vertical direction.

Lastly, the anisotropic conductive resin adhesive 9 ″ is cured while applying a load (approximately 2 to 20 kg / cm ² , pressurizing in the direction indicated by the arrow in the figure) from the upper surface of the semiconductor light emitting device 1. The curing conditions vary depending on the type of the anisotropic conductive resin adhesive 9 ″, but the curing conditions used in this example are 150 ° C.
2 minutes to 200 ° C. for 30 seconds.

As a result, between the P and N electrode layers 11 and 12 cured by receiving a load and the electrode portions 20 and 21 of a base such as an insulating substrate or a lead frame, the individual conductive substances sandwiched between the two. A conduction state is created because the 14 "is in direct contact.

On the other hand, the other portion of the anisotropic conductive resin adhesive 9 ″ cures without receiving a load, so that the conductive substances 14 ″ hardly come into contact with each other, and
5, it behaves as an insulating resin adhesive.

However, even in this case, if the gap between the surfaces to be bonded is smaller than the maximum diameter of the conductive material 14 ", there is a possibility that the conductive material 14" may cause conduction between the surfaces to be bonded. Since the element 1 has the PN junction and the vicinity 13 formed in a concave shape, the conductive state due to the conductive material 14 ″ does not occur on the end face where the PN junction is exposed.

[0090] In the real施例of the present invention, all four sides of the P
The N-junction and its vicinity are formed in a concave shape, but when connecting the semiconductor light-emitting element to a base such as an insulating substrate or a lead frame, at least one surface opposing the electrode direction is formed in a concave shape. I just need.

Further, these shapes need not necessarily be concave, and the anisotropic conductive resin adhesive may be replaced with the conductive resin adhesive at a portion where the electrode layer of the semiconductor light emitting element is bonded to a base such as an insulating substrate or a lead frame. The other adhesion surface, especially the end surface where the PN junction is exposed, may have a structure in which the anisotropic conductive resin adhesive behaves as an insulating resin adhesive.

Next, a reference example will be described with reference to the drawings.

[0093] Incidentally, the same material, the portion showing the shape and the actual施例of the present invention will not be described in detail with the same reference numerals in the drawings.

FIG. 7 is a perspective view of a semiconductor light emitting device formed according to the reference example, and FIG.
FIG. 4B is a cross-sectional view of a portion B ′, FIG. 4B is a top view, and FIG.

This reference example is different from the above-described embodiment in that the PN electrode layers 11 'and 12' are made of metal thin films 5 and 6 and conductive brazing materials or resin adhesives 19 'and 19 ". And that the PN junction and its vicinity 13 are covered with an insulating material 22 on the end face.

[0096] That is, the structure of the semiconductor light emitting element 23 of the present embodiment, first group III-V compound semiconductor, on the II-VI compound semiconductor or N-type semiconductor layer 2 made of a semiconductor material such as SiC, similarly III A P-type semiconductor layer 3 made of a semiconductor material such as a -V compound semiconductor, a II-VI compound semiconductor, or SiC is laminated.

Next, metal thin films 5 and 6 made of, for example, Ag or Au, and a conductive brazing material made of a metal material such as indium, or A, are formed on the entire end faces parallel to the PN junction surface 4.
Conductive resin adhesives 19 'and 19 "made of u-epoxy resin, Ag-epoxy resin or the like are sequentially laminated to form a P electrode layer 11' and an N electrode layer 12 '. The film thickness of the resin adhesives 19 ', 19 "is set to at least 20 [mu] m or more, preferably between 30 and 100 [mu] m, in consideration of a mounting state in a later step.

The PN junction and its vicinity 13 are formed in a concave shape so as to be lower than the surrounding surface, and the portion formed in the concave shape is, for example, a liquid epoxy resin (bisphenol A type epoxy resin). : 40 to 70
Parts by weight, a phenol novolak type epoxy resin: 10 to 30 parts by weight, a silica fine particle: 0 to 50 parts by weight, a modified urea resin: a mixture of 1 to less than 5 parts by weight) and the like. Coated.

[0099] Incidentally, in the present embodiment is formed an insulating material with an organic material such as liquid epoxy resin, SiO ₂ and Al ₂ O
_It may be formed by a method such as vapor deposition, sputtering, or spin coating using an inorganic material such as ₃ .

Next, a method of manufacturing a semiconductor light emitting device in the reference example will be described in detail.

[0102] Figure 9 (a) to (i) is a procedure diagram showing the method of manufacturing the semiconductor light-emitting device using the present embodiment.

Since FIGS. 9A and 9B show the same steps as FIGS. 4A and 4B described in the embodiment of the present invention , only the figure numbers are shown in the figures. The description is omitted.

After the chemical treatment of the surface in the groove 18, the semiconductor light emitting device 23 'in a wafer state is formed on the surface of the metal thin film 5 on the P-type semiconductor layer 3 side from the same surface as shown in FIG. A conductive brazing material made of a metal such as indium or a conductive resin adhesive made of an Au-epoxy resin, an Ag-epoxy resin, or the like is provided within a slightly small area.
9 is applied. If the thickness of the conductive brazing material or the resin adhesive 19 at this time is too small, the workability in the subsequent process is deteriorated. On the other hand, if the thickness is too large, stress destruction or the like occurs at the time of curing. It is set between 150 μm.

In the above state, the conductive brazing material or the resin adhesive 19 is still in an uncured state, and needs to be cured and fixed on the surface of the metal thin film 5.

[0105] Accordingly, next predetermined curing conditions (curing conditions as shown in FIG. 9 (d), intended varies depending on the kind of conductive brazing material or a resin adhesive 19 is used in this reference example, 150 ℃ -1 to 2 hours or equivalent conditions)
Is cured and fixed on the metal thin film 5.

Next, as shown in FIG. 9E, for example, a liquid epoxy resin (bisphenol A type epoxy resin: 40 to 7) is inserted into a plurality of two kinds of parallel grooves 18 which intersect vertically.
0 parts by weight, phenol novolak type epoxy resin: 10
To 30 parts by weight, a silica fine particle: 0 to 50 parts by weight, a modified urea resin: a mixture of 1 to less than 5 parts by weight, etc.). At this time, the applied amount of the insulating substance 22 is about 5 to 20 μm on the groove 18 so as not to overflow onto the surface of the conductive brazing material or the resin adhesive 19 cured and fixed on the surface of the metal thin film 5. So that When applying the insulating material 22, for example, the viscosity of the insulating material 22 is set to 10 po so that no air bubble is contained therein.
Care must be taken to keep it below ise ( ¹ poise = 10 ^-1 N · s / m ² ) or to perform vacuum defoaming after coating.

[0107] The insulating material 22, a predetermined curing conditions after coating and defoamed (curing conditions than those used in different but this reference example on the type of insulating material 22, 130 ° C. or less of the temperature, preferably 100 At -4 to 8 hours).
Is cured and fixed.

When the insulating material 22 is cured, as the groove 18 becomes too deep or as the curing temperature of the insulating material 22 increases, the semiconductor light emitting device 23 ′ in the wafer state is warped due to the curing contraction of the insulating material 22. These parameters may interfere with the subsequent process. Therefore, these parameters including the curing performance of the insulating material 22 (in this embodiment, depending on the components and compositions of the contained resins) must be carefully adjusted according to the individual case. It is important to choose one. For example, the depth of the reference example grooves 18, 100
It is preferable that the curing temperature of the insulating substance 22 be kept at 120 ° C. or less within μm.

[0109] In this reference example is formed an insulating material 22 in the organic material such as liquid epoxy resins but, SiO ₂ and Al ₂ O
_It may be formed of an inorganic material such as ₃ . In this case, a technique such as vapor deposition, sputtering, or spin coating is used.

Next, as shown in FIG. 9F, a conductive brazing material or a resin adhesive 19 formed on the surface of the metal thin film 5 on the side of the P-type semiconductor layer 3 is applied with a thickness of 2O. ~ 50μ
m until it reaches m (counter: # 800
To about # 2000).

Further, as shown in FIG. 9 (g), a conductive brazing material or resin adhesive 19 ', 19 "is applied to both front and back surfaces of the semiconductor light emitting element 23' in the wafer state.

Then, as shown in FIG.
It is cured under the curing conditions of 10 ° C. for 4 to 8 hours or 150 ° C. for 1 to 2 hours, and the P is applied so that the film thickness is at least 20 μm or more, preferably 30 to 100 μm.
-Form electrode layers 11 'and 12' on both sides of N. This is because when the thickness of the electrode layers 11 'and 12' is 20 μm or less, sufficient conduction with the electrode portion of the base such as an insulating substrate or a lead frame cannot be obtained. This is because breakage, electrode peeling, and the like are likely to occur. The conduction can be obtained when the film thickness is 20 μm or more, but it is more reliable when the film thickness is 30 μm or more. Further, if the film thickness is up to about 150 μm, the frequency of occurrence of the above defects in the present invention is not so high.

Finally, as shown in FIG. 9 (i), using a diamond blade or the like, for example, a plurality of perpendicularly intersecting two kinds of parallel grooves 18 filled with the insulating material 22 are used.
The semiconductor light emitting device 23 ′ in a wafer state is divided into individual chip-shaped semiconductor light emitting devices 23 along the center (width: about 50 to 80 μm). At this time, in consideration of dielectric breakdown or the like, the insulating material 2 formed on the end face where the PN junction is exposed is formed.
It is necessary to set the division width so that the film thickness of No. 2 is at least equal to or longer than the distance at which dielectric breakdown or the like occurs. In the present reference example, the division width is set so that the film thickness of the insulating material 22 formed on the end face where the PN junction is exposed is at least 5 μm or more considering the division accuracy and the like. 8
0 μm) and at least 10 μm or more, preferably about 20 μm.
It is necessary to set it to be μm narrow.

FIGS. 10A to 10C are views for explaining a method of mounting a semiconductor light emitting device in a reference example.

FIG. 10A shows the distance x ₁ between the electrode portions of a base such as an insulating substrate or a lead frame.
The mounting method is shown in the case where the distance is smaller than the distance between the N electrode layers.

First, an insulating adhesive 24 is applied in advance between the electrode portions 20 and 21 of a base such as an insulating substrate or a lead frame in order to prevent the semiconductor light emitting element 23 from being displaced during conductive bonding.

Next, a metal conductive brazing material such as indium or a conductive resin adhesive 19 such as Ag-epoxy resin is previously applied onto the electrode portions 20 and 21 of the base such as an insulating substrate or a lead frame. After coating, the semiconductor light emitting element 2
After the PN electrode layers 11 'and 12' are placed on the electrode portions 20 and 21 of a base such as an insulating substrate or a lead frame, the conductive brazing material or the resin adhesive 19 is cured. Curing conditions vary depending on the type of conductive brazing material or a resin adhesive 19 but is intended used in this reference example, for example, 110 ° C. -4 to 8 hours or 0.99 ° C. -1 to 2 hours or equivalent conditions.

[0118] In this reference example, PN junction and its vicinity 13 of the semiconductor light emitting element 23 mounting surface, since the end face by an insulating material 22 is coated, an electrically conductive brazing material or resin generated during mounting Eliminating defects such as short circuit, scratches and breakage at the end face where the PN junction is exposed due to the adhesive 19 wraparound.

FIG. 10B shows the distance x ₂ between the electrode portions of the base such as an insulating substrate or a lead frame.
The mounting method is shown in the case where the distance between the two electrode layers is wider than that of the N electrode layers. The basic mounting method and conditions are shown in FIG.
Same as (a).

First, an insulating adhesive 24 is applied between the electrode portions 20 and 21 of a base such as an insulating substrate or a lead frame in order to prevent the semiconductor light emitting element 23 from being displaced during the conductive bonding. The P and N electrode layers 11 'and 12' of the semiconductor light emitting element 23 are mounted and fixed on electrode portions 20 and 21 of a base such as an insulating substrate or a lead frame, respectively.

Next, in order to electrically connect the semiconductor light emitting element 23 to the electrode portions 20 and 21 of a base such as an insulating substrate or a lead frame, a conductive brazing material made of a metal such as indium or an Ag-epoxy resin is used. After the conductive resin adhesive 19 such as is applied, it is cured. Curing conditions than those used in different but this reference <br/> example the type of conductive brazing material or a resin adhesive 19, for example, 110 ° C. -4 to 8 hours or 0.99 ° C. -1 to 2 hours or equivalent Condition.

[0122] In the present embodiment, P · N the electrode layers 11 ', 1
2 'is a conductive brazing material or resin adhesive 19', 19 "of the same material as the conductive brazing material or resin adhesive 19 for mounting.
In comparison with the conventional mounting method, the connection between the conductive brazing material or resin adhesive 19 for mounting and the P and N electrode layers 11 'and 12' is Dramatically improved.

FIG. 10 (c) is a cross-sectional view of a case where an anisotropic conductive resin adhesive is used to connect to a base such as an insulating substrate or a lead frame.

As shown in FIG. 10, the electrode portions 20, 21 of a base such as an insulating substrate or a lead frame are provided with a number of liquid translucent epoxy resins such as "Morfit TG-9000R" manufactured by Hysole Co. or similar products. An anisotropic conductive resin adhesive 9 ″ such as a resin material mixed with conductive coarse particles (particle size: about 10 μm or less) of 10 to several tens wt% is applied (film thickness: about several to 10 μm).

Next, the P and N electrode layers 1 are applied to the electrode portions 20 and 21 of a base such as an insulating substrate or a lead frame.
The semiconductor light emitting element 23 is mounted so that 1 'and 12' are vertically in contact with each other.

Finally, the anisotropic conductive resin adhesive 9 ″ is cured while applying a load (approximately 2 to 20 kg / cm 2, pressurizing in the direction indicated by the arrow in the figure) from the upper surface of the semiconductor light emitting element 23. The curing conditions differ depending on the type of the anisotropic conductive resin adhesive 9 ″, but the curing conditions used in this reference example are 150 ° C.
−2 minutes to 200 ° C. for 30 seconds.

As a result, each of the conductive layers sandwiched between the P and N electrode layers 11 'and 12' cured by receiving a load and the electrode portions 20 and 21 of a base such as an insulating substrate or a lead frame. A conduction state is created because the substance 14 "is in direct contact.

On the other hand, the other portion of the anisotropic conductive resin adhesive 9 ″ hardens without receiving a load, so that the conductive substances 14 ″ hardly come into contact with each other, and
5 and behaves as an insulating resin adhesive.

In this case, however, if the gap between the surfaces to be bonded is smaller than the maximum diameter of the conductive substance 14 ", conduction by the conductive substance 14" may occur. The junction and its vicinity 13 are covered with an insulating substance 22 with a film thickness higher than the withstand voltage.
The end face where the PN junction is exposed does not come into contact with the conductive material 14 ", and thus no conduction occurs.

[0130] In the present embodiment, the anisotropic conductive resin adhesive 9 "
Also serves as an insulating adhesive for fixing the semiconductor light emitting element 23, so that the insulating adhesive which has been conventionally used for the purpose of preventing the displacement when the semiconductor light emitting element 23 is conductively bonded and protecting the exposed portion of the PN junction, etc. Becomes unnecessary.

In the above reference example, the PN junction on all four sides and the vicinity thereof are formed in a concave shape, and all of the parts are filled with an insulating material. Alternatively, at the time of connection to a base such as a lead frame, it is sufficient that at least only one surface opposing the electrode direction is formed in a concave shape, and only this portion is filled with an insulating material. Even when the plurality of PN junctions and the vicinity thereof are formed in a concave shape, when connecting the semiconductor light emitting element to a base such as an insulating substrate or a lead frame, at least one surface facing the electrode direction has an insulating property. What is necessary is just to have the structure filled with the substance.

Furthermore, these shapes need not necessarily be concave, and if the end face of the semiconductor light emitting device where the PN junction is exposed can be covered with an insulating material, the insulating substrate or the end face where the PN junction is exposed can be covered. Any processing shape and process may be used as long as the insulating material can be formed in a flat shape on the end face opposing the base such as a lead frame.

[0133]

According to the present invention, the metal thin film has anisotropic conductivity.
A process of placing a metal foil via a resin adhesive and curing it under pressure
In the process, the PN junction part is short-circuited and leak current
It is possible to prevent the occurrence of such semiconductors
A light-emitting element can be easily manufactured. PN junction is exposed on at least one end surface and its vicinity of the perpendicular end surface to the PN junction surface of the semiconductor layer in a semi-conductor light emitting element, or is formed so as to be positioned lower than the vertical end face of the periphery, or lever is formed in a concave shape, PN junction exposed on the end face of the semiconductor light emitting device and scratches or damage occurring in the vicinity thereof is prevented during mounting of the insulating substrate or a lead frame or the like.

Accordingly, the work becomes easy, the productivity and the yield are improved, and the cost can be reduced. Therefore, it is possible to supply inexpensive products.

[0135]

[0136]

[0137]

[0138]

[0139] As the semiconductor layer in a semi-conductor light emitting elements, III-
V group compound semiconductor, II-VI group compound semiconductor, lever to create picked any from among semiconductor materials such as SiC, a color display device or the like is easily fabricated using semiconductor light emitting elements of different emission colors .

Accordingly, it is possible to develop a display device having a commercial value equal to or higher than that of a cathode ray tube or a liquid crystal monitor.

[0141] electrode layer formed on the semiconductor layer in a semi-conductor light emitting element, a metallic thin film, because it is formed by the combination of the anisotropic conductive resin adhesive and a metal foil, the electrode layer formed easy In addition, breakage of the semiconductor layer and peeling of the electrode layer due to a difference in stress between the semiconductor layer and the electrode layer of the semiconductor light emitting element when forming the electrode layer are eliminated.

Further, the thickness of the electrode layer was suppressed to 150 μm or less.
In this way , problems such as stress destruction and electrode peeling can be prevented.

Alternatively, by providing a lower limit of at least 20 μm for the film thickness, sufficient conduction can be ensured without hindering driving during mounting.

Therefore, the process is simplified, so that the productivity,
Since reliability and yield can be improved and costs can be reduced, it is possible to supply inexpensive products.

[0145] Alternatively the electrode layer of the semiconductor light emitting element, the utilization efficiency of the insulating substrate or the lead frame or the like is disposed so as to be perpendicular to the substrate of the lever, the electrode layer that blocks the emitted light is not the light is high. In addition, since the entire surface of the electrode layer is connected with a conductive brazing material, a resin adhesive, or an anisotropic conductive resin adhesive, effective heat radiation is performed, and luminous efficiency is increased. In addition, connection with the substrate electrode portion by Au wire or the like is unnecessary, so that it is possible to reduce the process and operation time, material cost, and size.

Further, when the electrode layer of the semiconductor light emitting element is connected to a base such as an insulating substrate or a lead frame using a conductive brazing material or a resin adhesive, the material forming the electrode layer and the electrode portion of the base are used. Are made of the same material, so that the two are well adapted to each other.

Alternatively, when the electrode layer of the semiconductor light emitting element is connected to a base such as an insulating substrate or a lead frame using an anisotropic conductive resin adhesive, connection in a minute range is possible, and Further miniaturization becomes possible.

[0148] Further, the anisotropic conductive resin adhesive, which also serves as the insulating adhesive for an end surface protection of the fixed and PN junction exposed portion of the semiconductor light emitting element and the substrate such as an insulating substrate or a lead frame
If this is the case, the step of temporarily fixing, which was conventionally required, becomes unnecessary.

Therefore, it is possible to supply a semiconductor light emitting device which is small, has high light use efficiency and high reliability, at low cost.

[0150] Dimensions of the semi-conductor light emitting element, 500 [mu] m
Since it can be formed with a small size smaller than a corner, it is possible to construct a high-resolution display device using this.

Accordingly, it is possible to obtain a thin, high-definition, low-cost display device having the same performance as a cathode ray tube or a liquid crystal display.

[0152] The maximum diameter of the conductive component contained in the anisotropic conductive resin adhesive, a PN junction and the vicinity thereof are exposed on at least one end face of the vertical end surface to the PN junction surface of the semiconductor layer, surrounding is designed to be smaller than the difference in level between the vertical end face of the lever, the semiconductor light emitting element and the insulating substrate or the anisotropic conductive resin adhesive wrapping around the other connecting portion of the substrate such as a lead frame, PN junction Even if it adheres to the portion and its vicinity, abnormal driving of the semiconductor light emitting element due to short circuit or generation of leakage current at the end face where the PN junction is exposed does not occur.

Therefore, it is possible to supply a semiconductor light emitting device with higher reliability.

In the method of manufacturing these semiconductor light emitting devices,
Te, easily processed PN junction and the vicinity of the shape thereof is exposed on the end face of the semiconductor light-emitting element can be formed, further, since the relatively thick electrode layers of thickness can be formed top and / or bottom at the same time, Warpage is unlikely to occur.

Alternatively, in the method for manufacturing a semiconductor light emitting device, a step of forming at least a groove portion reaching the PN junction surface in the semiconductor layer, a step of covering the groove portion with an insulating material, and forming an electrode layer on both surfaces of the semiconductor layer Forming and cutting along the groove portion covering the semiconductor layer and both electrode layers,
When having the step of separating, in addition to the above action,
The PN junction and its vicinity can be easily protected.

Accordingly, workability in the manufacturing process is improved, the process is simplified, and the yield and reliability of the product are improved.

[Brief description of the drawings]

Perspective view of a semiconductor light-emitting device according to the real施例according to the invention; FIG.

2A is a sectional view taken along the line AA ′ in FIG. 1, FIG. 2B is a top view, and FIG. 2C is a bottom view.

FIGS. 3A and 3B are cross-sectional views of a semiconductor light emitting device for explaining the function of an anisotropic conductive resin adhesive.

4 (a) to (f), the procedure diagram showing the method of manufacturing the semiconductor light emitting device according to the real施例according to the present invention.

FIGS. 5A and 5B are cross-sectional views of a semiconductor light emitting device for explaining the reason for using an anisotropic conductive resin adhesive during a process.

Sectional view of a semiconductor light emitting device showing a mounting method of a semiconductor light emitting device according to the real施例according to the present invention; FIG.

FIG. 7 is a perspective view of a semiconductor light emitting device according to a reference example.

8A is a sectional view taken along the line BB ′ in FIG. 7, FIG. 8B is a top view, and FIG. 8C is a bottom view.

FIGS. 9A to 9I are procedural diagrams illustrating a method for manufacturing a semiconductor light emitting device according to a reference example.

FIGS. 10A to 10C are cross-sectional views of a semiconductor light emitting device illustrating a method of mounting the semiconductor light emitting device according to a reference example.

FIG. 11 is a perspective view of a conventional semiconductor light emitting device.

12A is a sectional view taken along the line CC ′ in FIG. 11, FIG. 12B is a top view, and FIG. 12C is a bottom view.

FIG. 13 is a cross-sectional view of a semiconductor light emitting device illustrating a method for mounting the semiconductor light emitting device according to a conventional example.

FIGS. 14A and 14B are cross-sectional views showing the structure of a semiconductor light emitting device having a chip component shape according to a conventional example.

FIG. 15 is a perspective view of a semiconductor light emitting device according to another conventional example.

16A is a sectional view taken along the line DD ′ in FIG. 15, FIG. 16B is a top view, and FIG. 16C is a bottom view.

FIGS. 17A and 17B are cross-sectional views of a semiconductor light emitting device showing a method of mounting a semiconductor light emitting device according to another conventional example.

[Explanation of symbols]

1,23 Semiconductor light emitting element 2,3 (N-type or P-type) semiconductor layer 4 PN junction surface 5,6 Metal thin film 7,8 Metal foil 9,9 ', 9 ", 10 Anisotropic conductive resin adhesive 11 , 11 ', 12, 12' (N or P) electrode layer 13 PN junction and its vicinity 14, 14 ', 14 "conductive material 18 groove 19, 19', 19" conductive brazing material or resin adhesive 20, 21 Insulating substrate or electrode part of base such as lead frame 22 Insulating substance

Continuation of front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 33/00 G09F 9/33

Claims (2)

(57) [Claims] 1. A step of forming a metal thin film on and / or below a semiconductor layer having a PN junction, and arranging a metal foil on the metal thin film via an anisotropic conductive resin adhesive, and curing under pressure. And forming a groove reaching the PN junction in advance on the semiconductor layer coated with the metal thin film, forming the anisotropic conductive resin adhesive. A method for manufacturing a light-emitting element. 2. The method for manufacturing a semiconductor light emitting device according to claim 1 , wherein the semiconductor light emitting device having a concave depression is formed by dividing the groove into a chip shape along a substantially center of the groove.