JPH0727992B2 - Semiconductor device - Google Patents

Description

The present invention relates to an electrode shape of a semiconductor device, particularly a resin-sealed semiconductor device.

[Conventional technology]

FIGS. 5 to 7 are views showing a conventional semiconductor device of this type, here, a semiconductor module for power containing 6 elements for an inverter, in which 1 is an insulating heat dissipation substrate and 2 is an insulating heat dissipation substrate 1. Provided conductive layer, 3 is a positive side DC input terminal electrode, 4 is a negative side DC input terminal electrode, 51
Numerals 53 to 53 are three-phase AC output terminal electrodes, 61 to 63 are base signal terminal electrodes, and 71 to 73 are emitter signal terminal electrodes. Here, the DC input terminal electrodes 3 and 4, the three-phase AC output terminal electrodes 51 to 53, the base signal terminal electrodes 61 to 63, and the emitter signal terminal electrodes 71 to 73 are soldered on the conductive layer 2. . Reference numeral 8 is a power semiconductor chip, and 9 is an aluminum wire connecting the power semiconductor chip 8 and the conductive layer 2.

In this conventional device, a conductive layer 2 is provided on a heat dissipation substrate 1, and electrodes 3 and 4 for DC input terminals, electrodes 51 to 53 for three-phase AC output terminals, electrodes 61 to 63 for base signal terminals, and an emitter are further provided thereon. The signal terminal electrodes 71 to 73 and the semiconductor chip 8 are soldered, and the chip 8 and the conductive layer 2 are connected by the aluminum wire 9. After that, a case is adhered to the substrate 1, silicon gel is injected, and finally sealed with an epoxy resin.

[Problems to be Solved by the Invention]

With this conventional structure, the electrode plate is fixed to the resin as described above, so that the insulating layer and the conductive layer of the insulating heat dissipation substrate are not affected by the thermal distortion and thermal fatigue that occur when the temperature changes. It was peeled off or cracked from the soldered part, which was a cause of poor insulation, poor continuity, short circuit, etc. Therefore, a U-shaped electrode shape or an S-shaped electrode shape as shown in FIGS. 6 and 7 is adopted.

That is, in FIG. 6, 11 is a DC input on the plus side which is soldered on the conductive layer 2 and is partially processed in a U-shape in the thickness direction of the electrode, and 12 is the same as the electrode 11 for the DC input terminal on the plus side. Electrode for negative side DC input terminal, processed 131
Reference numerals 133 to 133 are three-phase AC output terminal electrodes that have been processed in the same manner as the plus side DC input terminal electrode 11.

Although not shown here, the U-shaped portion of each of these electrodes may be formed in an S-shape. Reference numerals 141 to 143 are base signal terminal electrodes formed in an S shape on the same surface, 151 to 153 are emitter signal terminal electrodes formed in the same shape as the base signal terminal electrodes 141 to 143, and 16 is silicon. It is an epoxy resin layer including the conductive layer 2, the semiconductor chip 8, the wires 9, the electrodes 11, 12, 131 to 133, 141 to 143, 151 to 153, etc. on the insulating heat dissipation substrate 1 via the gel 17.

With such a configuration, when the silicon gel 17 thermally expands during temperature fluctuation and a tensile force is applied to the electrode 12 in the direction of the arrow 18, the U-shaped portion of the electrode 12 is moved upward as shown in FIG. Therefore, an excessive force is not applied to the joint between the electrode 12 and the insulating heat dissipation substrate 1.

However, in order to obtain a sufficient bend effect, it is necessary to lengthen the U-shaped portion or the S-shaped portion, that is, to increase the damper length, and to increase the rounding radius of the U-shaped portion and the S-shaped portion. Increased length and height. Therefore, there has been a problem that the outer shape of the module becomes large and many materials are required.

The present invention has been made to solve such a problem, and provides a compact semiconductor device while absorbing the strain generated between the electrodes fixed to the resin and the insulating discharge substrate when the temperature changes. The purpose is to do.

[Means for Solving the Problems]

In the semiconductor device according to the present invention, a part of the electrode attached to the heat dissipation board together with the semiconductor element is detoured in a plane perpendicular to the length direction of the electrode, and the electrode and the semiconductor element are formed on the heat dissipation board with a resin. It is designed to be sealed by layers.

[Action]

In the present invention, since a part of the electrode is formed in a detour in a plane perpendicular to the lengthwise direction, strain between the electrode fixed by the resin layer and the thermal substrate is generated in the lengthwise direction of the electrode. It is absorbed without increasing the size and prevents problems such as poor insulation, poor conductivity and short circuits.

〔Example〕

An embodiment of the present invention will be described below with reference to FIGS. That is, in FIGS. 1 to 4, 211 to 213 are electrodes for base signal terminals, 221-2, which are soldered on the conductive layer 2 and partially processed into a U shape in a plane perpendicular to the length direction.
Reference numeral 23 is an emitter signal electrode processed in the same manner as the base signal terminal electrodes 211 to 213. The other structure is the same as that of the conventional structure shown in FIGS.

In the structure thus configured, the electrodes 211 to 213 and 221-2 are
Since 23 is processed in a U shape in a plane parallel to the substrate 1, this U shape absorbs the tensile force of the extending electrode 211 in the direction of arrow 18 as shown in FIG. An excessive force is prevented from being applied to the joint between the electrode 211 and the insulating heat dissipation substrate 1. Therefore, it is possible to prevent defects such as poor insulation, poor conductivity, and short circuit in the soldered portion of the electrode.

Although the action against only the pulling force in the direction of the arrow 18 has been described here, a strain is generated between the insulating heat dissipation substrate 1 and the epoxy resin 16, and a lateral force is applied to the electrode, or an upward or lateral direction. Even when a combined force such as is applied to the electrode, the U-shaped processed portion of the electrode is deformed and absorbs the force as in the case shown in FIG. 4, so that an excessive force is applied to the joint between the heat dissipation board 1 and the electrode. No more joining.

Further, although the case where the insulating heat dissipation substrate is used is described in this embodiment, these may be those in which the insulating substrate is placed on the metal base plate. Further, each terminal electrode may be spirally formed in a plane perpendicular to the length direction.

〔The invention's effect〕

As described above, in the semiconductor device according to the present invention, a part of the electrode is formed so as to detour in a plane perpendicular to the length direction of the electrode, so that the lengthwise dimension of the electrode is not increased.
Excessive force is not applied to the joint between the electrode and the insulating heat dissipation substrate, and defects such as poor insulation, poor continuity, and short circuit are prevented.

[Brief description of drawings]

1 to 4 are views showing an embodiment of the present invention, and FIG. 1 is an exploded perspective view showing the whole, FIG. 2 and FIG.
FIG. 4 is a front view, a side view, a plan view showing an essential part, FIG. 4 is a side view of an essential part of an operation explanatory view, and FIGS. 5 and 6 are perspective views showing a conventional semiconductor device of this kind. FIG. 7 is a side sectional view of a main part for explaining the operation of the conventional one. In the figure, 1 is an insulating heat dissipation substrate, 2 is a conductive layer, 8 is a semiconductor chip, 9 is an aluminum wire, 11 and 12 are electrodes for DC input terminals, 131 to 133 are electrodes for three-phase AC output terminals, and 211 to 213. Is a base signal terminal electrode, 221-223 are emitter signal terminal electrodes, 16 is an epoxy resin, and 17 is a silicon gel. The same reference numerals in the drawings indicate the same or corresponding parts.

Claims (1)

[Claims] 1. A heat dissipation board to which a semiconductor element is attached, an electrode attached to this heat dissipation board, a part of which is formed by detouring in a plane perpendicular to the lengthwise direction, the electrode and the semiconductor element being the heat dissipation board. A semiconductor device that includes a resin layer that integrally seals with the semiconductor device.