JPH07244231A - Optical coupling device, semiconductor light-emitting element and relay - Google Patents

Optical coupling device, semiconductor light-emitting element and relay

Info

Publication number
JPH07244231A
JPH07244231A JP6033194A JP6033194A JPH07244231A JP H07244231 A JPH07244231 A JP H07244231A JP 6033194 A JP6033194 A JP 6033194A JP 6033194 A JP6033194 A JP 6033194A JP H07244231 A JPH07244231 A JP H07244231A
Authority
JP
Japan
Prior art keywords
light emitting
light
emitting element
light receiving
optical coupling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6033194A
Other languages
Japanese (ja)
Inventor
Kazuyuki Hayamizu
一行 速水
Hideaki Watanabe
秀明 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Corp
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Corp, Omron Tateisi Electronics Co filed Critical Omron Corp
Priority to JP6033194A priority Critical patent/JPH07244231A/en
Publication of JPH07244231A publication Critical patent/JPH07244231A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Optical Couplings Of Light Guides (AREA)

Abstract

PURPOSE:To provide an optical coupling device which is easily producible and has a high light transmission efficiency. CONSTITUTION:A pair of light emission-side lead frames 3a, 3b and a pair of light reception-side lead frames 4a, 4b are formed from one sheet of a metallic sheet. A light-emitting element packaging part 5 is provided with an approximately U-shaped aperture 7 at its front end. A light-emitting element 1 with its light emitting surface facing downward is packaged atop the light emission-side lead frame 3a so as to be positioned in the aperture 7. A light receiving element with its light receiving surface facing upward is packaged atop the light reception side lead frame 4a in a light receiving element packaging part 6. A pair of the light emission-side lead frames 3a, 3b are bent to position the light emitting element 1 diagonally above the light receiving element 2. The light-emitting element 1, the light-receiving element 2, etc., are fixed by a transparent resin 9 and further, this transparent resin 9 is covered by a sealing resin 10 to form the optical coupling device A. As a result, both of the light emitting element 1 and the light receiving element 2 are packaged in the same direction and the light emitted from the light emitting element 1 is received directly by the light receiving element 2 through the aperture 7.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は光結合装置及び半導体発
光素子並びに継電器に関する。具体的にいうと、本発明
は半導体発光素子と半導体受光素子とにより信号伝達を
行なう光結合装置及び当該光結合装置に適した半導体発
光素子並びに当該光結合装置を利用した継電器に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical coupling device, a semiconductor light emitting device, and a relay. More specifically, the present invention relates to an optical coupling device for transmitting signals by a semiconductor light emitting element and a semiconductor light receiving element, a semiconductor light emitting element suitable for the optical coupling device, and a relay using the optical coupling device.

【0002】[0002]

【従来技術とその問題点】光結合装置は、例えばSSR
(ソリッドステートリレー)、具体的にはMOS−SS
Rなどの多くのアプリケーションに用いられている。こ
のMOS−SSRは、光結合装置の受光素子からの出力
電圧に基づきMOS−FETの電圧制御機構を利用して
出力信号の制御を行なうものであって、SSRに接続さ
れた外部回路のON、OFF制御などを行なうことがで
きるものである。これらのアプリケーションに用いられ
る光結合装置には従来から次のような構造のものがあ
る。
2. Description of the Related Art An optical coupling device is, for example, an SSR.
(Solid state relay), specifically MOS-SS
It is used in many applications such as R. This MOS-SSR controls an output signal by using a voltage control mechanism of a MOS-FET based on an output voltage from a light receiving element of an optical coupling device, and an external circuit connected to the SSR is turned on, The OFF control can be performed. The optical coupling device used for these applications has conventionally the following structure.

【0003】図11に示すものは平面型の光結合装置J
であって、同一平面上に二対のリードフレーム51,5
2が配置されており、一対のリードフレーム51上には
発光素子53が実装されており、残る一対のリードフレ
ーム52には受光素子54が実装されている。リードフ
レーム51,52や発光素子53及び受光素子54は透
明樹脂55で固定され、その周囲は白色をしたエポキシ
樹脂などの封止樹脂56により封止されている。一対の
リードフレーム51から入力された電気信号は発光素子
53により光信号Lに変換され、発光素子53上面の出
射窓より上方に向けて出射される。出射された光信号L
は透明樹脂55と封止樹脂56との界面において反射さ
れ、反射された光信号Lは受光素子54により受光され
る。受光された光信号Lは受光素子54により再び電気
信号に変換されたのち残る一対のリードフレーム52か
ら電気信号として取り出すことができる。この平面型の
光結合装置Jにおいて、二対のリードフレーム51,5
2は同一平面上に配置されるため、一枚の金属板を加工
して二対のリードフレーム51,52を同時に作成する
ことができる。また、発光素子53及び受光素子54と
もにリードフレーム51,52の同一面側に実装するこ
とができるので、実装工程が簡単でしかも歩留りよく光
結合装置Jを作成することができ、製造コストが安くな
るという利点を有している。
FIG. 11 shows a planar type optical coupling device J.
And two pairs of lead frames 51, 5 on the same plane.
2 is arranged, the light emitting element 53 is mounted on the pair of lead frames 51, and the light receiving element 54 is mounted on the remaining pair of lead frames 52. The lead frames 51, 52, the light emitting element 53, and the light receiving element 54 are fixed with a transparent resin 55, and the periphery thereof is sealed with a sealing resin 56 such as white epoxy resin. The electric signal input from the pair of lead frames 51 is converted into an optical signal L by the light emitting element 53, and is emitted upward from the emission window on the upper surface of the light emitting element 53. Emitted optical signal L
Is reflected at the interface between the transparent resin 55 and the sealing resin 56, and the reflected optical signal L is received by the light receiving element 54. The received optical signal L can be extracted as an electric signal from the pair of lead frames 52 remaining after being converted into an electric signal again by the light receiving element 54. In this planar type optical coupling device J, two pairs of lead frames 51, 5
Since the two are arranged on the same plane, two pairs of lead frames 51 and 52 can be simultaneously formed by processing one metal plate. Further, since both the light emitting element 53 and the light receiving element 54 can be mounted on the same surface side of the lead frames 51, 52, the mounting process is simple and the optical coupling device J can be manufactured with high yield, and the manufacturing cost is low. Has the advantage that

【0004】しかしながら発光素子53より出射された
光信号Lは一旦不透明な封止樹脂56により反射されて
受光素子54に受光されるため、信号伝達効率が悪く受
光素子54からの出力が小さいという問題点があった。
However, since the optical signal L emitted from the light emitting element 53 is once reflected by the opaque sealing resin 56 and received by the light receiving element 54, the signal transmission efficiency is poor and the output from the light receiving element 54 is small. There was a point.

【0005】また、図12に示すものは対向型の光結合
装置Kであって、二対のリードフレーム51,52が上
下に配置されており、発光素子53は上側に配置された
リードフレーム51の下面に実装され、受光素子54は
下側に配置されたリードフレーム52の真上面に実装さ
れている。この光結合装置Kにおいては発光素子53か
ら出射された光信号Lは直接受光素子54で受光するの
で、信号伝達効率が大きく出力も大きいと言う利点を有
する。
Further, FIG. 12 shows an opposed type optical coupling device K in which two pairs of lead frames 51 and 52 are arranged vertically and a light emitting element 53 is arranged above the lead frame 51. The light receiving element 54 is mounted on the upper surface of the lead frame 52 arranged on the lower side. In the optical coupling device K, since the optical signal L emitted from the light emitting element 53 is directly received by the light receiving element 54, there is an advantage that the signal transmission efficiency is large and the output is large.

【0006】しかしながら二対のリードフレーム51,
52を上下で平行に対向しなければならず、しかも二対
のリードフレーム51,52間の距離を厳密にしなけれ
ばならない。このため、発光素子53から出射された光
信号Lを効率よく受光素子54に受光させることが困難
で、出力不足によって光結合装置Kの歩留りが悪いもの
となっていた。また、発光素子53はリードフレーム5
1の下面に実装しなければならないので、あらかじめ発
光素子53をリードフレーム51の上面に実装させたの
ち、リードフレーム51の上面と下面を反転させる必要
があり製造工程が複雑となる。さらに、2枚の金属板を
加工して上下それぞれのリードフレーム51,52を作
成しなければならず、製造コストが高くなるという問題
点があった。
However, the two pairs of lead frames 51,
52 must be vertically opposed to each other in parallel, and the distance between the two pairs of lead frames 51, 52 must be strict. Therefore, it is difficult for the light receiving element 54 to efficiently receive the optical signal L emitted from the light emitting element 53, and the yield of the optical coupling device K is poor due to insufficient output. The light emitting element 53 is the lead frame 5
Since the light emitting element 53 must be mounted on the lower surface of the lead frame 51 in advance, it is necessary to mount the light emitting element 53 on the upper surface of the lead frame 51 in advance, and then the upper surface and the lower surface of the lead frame 51 are inverted. Further, it is necessary to process the two metal plates to form the upper and lower lead frames 51 and 52, respectively, which causes a problem of high manufacturing cost.

【0007】[0007]

【発明が解決しようとする課題】本発明は叙上の従来例
の欠点に鑑みてなされたものであり、その目的とすると
ころは、信号伝達効率がよくしかも製造コストの低い光
結合装置を提供することにある。また、この光結合装置
に適した半導体発光素子を提供することにある。
SUMMARY OF THE INVENTION The present invention has been made in view of the drawbacks of the above conventional examples, and an object of the present invention is to provide an optical coupling device having high signal transmission efficiency and low manufacturing cost. To do. Another object is to provide a semiconductor light emitting element suitable for this optical coupling device.

【0008】[0008]

【課題を解決するための手段】本発明の光結合装置は、
発光素子を実装したリードフレームと受光素子を実装し
たリードフレームとを有する光結合装置において、少な
くともいずれか一方の前記リードフレームに開口部を有
することを特徴としている。
The optical coupling device of the present invention comprises:
An optical coupling device having a lead frame on which a light emitting element is mounted and a lead frame on which a light receiving element is mounted is characterized in that at least one of the lead frames has an opening.

【0009】この開口部に位置させて前記発光素子若し
くは前記受光素子を実装することとすればよく、前記発
光素子の発光面側若しくは前記受光素子の受光面側を当
該開口部を有するリードフレームに実装することが望ま
しい。
The light emitting element or the light receiving element may be mounted in the opening, and the light emitting surface side of the light emitting element or the light receiving surface side of the light receiving element may be used as a lead frame having the opening. It is desirable to implement it.

【0010】また、前記発光素子の発光面と前記受光素
子の受光面とを対向させることにするのが好ましい。
It is preferable that the light emitting surface of the light emitting element and the light receiving surface of the light receiving element are opposed to each other.

【0011】また、前記発光素子を実装したリードフレ
ーム若しくは前記受光素子を実装したリードフレームを
曲げて、前記発光素子の発光面と前記受光素子の受光面
とに段差を設けることにしてもよい。
The lead frame on which the light emitting element is mounted or the lead frame on which the light receiving element is mounted may be bent to form a step between the light emitting surface of the light emitting element and the light receiving surface of the light receiving element.

【0012】また、前記発光素子の発光面若しくは前記
受光素子の受光面を傾斜させることとしてもよく、この
ためには前記発光素子を実装したリードフレームの実装
面若しくは前記受光素子を実装したリードフレームの実
装面を傾斜させてもよい。
The light emitting surface of the light emitting element or the light receiving surface of the light receiving element may be tilted. For this purpose, a mounting surface of a lead frame on which the light emitting element is mounted or a lead frame on which the light receiving element is mounted is mounted. The mounting surface of may be inclined.

【0013】本発明の半導体発光素子は、半導体発光素
子本体の上面及び下面に電極をそれぞれ部分的に形成し
たことを特徴としている。このとき、前記半導体発光素
子本体の上面外周域若しくは下面外周域に電極を形成す
ることが好ましく、さらには前記半導体発光素子本体上
面の電極と前記半導体発光素子本体下面の電極とが互い
に重なり合わないように形成するのが望ましい。
The semiconductor light emitting device of the present invention is characterized in that electrodes are partially formed on the upper surface and the lower surface of the semiconductor light emitting device body. At this time, it is preferable to form an electrode on the upper peripheral area or the lower peripheral area of the semiconductor light emitting element body, and further, the electrode on the upper surface of the semiconductor light emitting element body and the electrode on the lower surface of the semiconductor light emitting element body do not overlap each other. It is desirable to form it.

【0014】この本発明による半導体発光素子と受光素
子とによって光結合装置を構成することとしてもよく、
特に上記の各光結合装置に組合せるのが望ましい。
An optical coupling device may be constituted by the semiconductor light emitting element and the light receiving element according to the present invention,
In particular, it is desirable to combine it with each of the above optical coupling devices.

【0015】また、本発明の継電器にあっては、本発明
の光結合装置と当該光結合装置の発光素子からの電気的
出力に基づいて出力信号を制御する出力信号制御手段と
を備えたことを特徴としている。たとえば、制御信号出
力手段にMOS−FETを用いることができる。
Further, the relay of the present invention comprises the optical coupling device of the present invention and output signal control means for controlling an output signal based on an electrical output from the light emitting element of the optical coupling device. Is characterized by. For example, a MOS-FET can be used as the control signal output means.

【0016】[0016]

【作用】本発明の光結合装置にあっては、発光素子ある
いは受光素子を実装したリードフレームに開口部を備え
ているので、発光素子の発光面又は受光素子の受光面を
開口部に位置させてリードフレームに実装すれば、発光
素子からの出射光は開口部を通して受光素子に受光させ
ることができる。このとき、発光素子の発光面又は受光
素子の受光面側を開口部を有するリードフレームに実装
しておけば、発光素子及び受光素子ともにリードフレー
ムの同一面側に実装することができる。また、発光素子
の発光面と受光素子の受光面とを対向させることとして
いるので、発光素子の発光面から出射された出射光は直
接受光素子の受光面で直接受光させることができる。
In the optical coupling device of the present invention, since the lead frame on which the light emitting element or the light receiving element is mounted is provided with the opening, the light emitting surface of the light emitting element or the light receiving surface of the light receiving element is positioned in the opening. If mounted on a lead frame, the light emitted from the light emitting element can be received by the light receiving element through the opening. At this time, if the light emitting surface of the light emitting element or the light receiving surface side of the light receiving element is mounted on a lead frame having an opening, both the light emitting element and the light receiving element can be mounted on the same surface side of the lead frame. Further, since the light emitting surface of the light emitting element and the light receiving surface of the light receiving element are opposed to each other, the emitted light emitted from the light emitting surface of the light emitting element can be directly received by the light receiving surface of the light receiving element.

【0017】すなわち本発明の光結合装置においては、
開口部に位置させて実装したリードフレーム上面の発光
素子から光を開口部から下方に向けて出射させ、出射さ
せた光をリードフレーム上面に実装された受光素子によ
り直接受光させることができる。したがって、従来の平
面型の光結合装置と同様に発光素子及び受光素子の実装
が容易に行なえ、しかも対向型の光結合装置と同様に信
号伝達効率を高くすることができる。
That is, in the optical coupling device of the present invention,
Light can be emitted downward from the light emitting element mounted on the upper surface of the lead frame positioned in the opening, and the emitted light can be directly received by the light receiving element mounted on the upper surface of the lead frame. Therefore, the light emitting element and the light receiving element can be easily mounted as in the conventional planar type optical coupling device, and the signal transmission efficiency can be increased similarly to the facing type optical coupling device.

【0018】このためには、発光素子を実装したリード
フレーム若しくは受光素子を実装したリードフレームを
曲げて、発光素子の発光面と受光素子の受光面とに段差
を設けておくとよい。このようにリードフレームを曲げ
るようにすれば、一枚の金属板を加工して4つのリード
フレームを同時に作成することができ、光結合装置のコ
ストを低く抑えることができる。
For this purpose, it is preferable that the lead frame on which the light emitting element is mounted or the lead frame on which the light receiving element is mounted is bent to provide a step between the light emitting surface of the light emitting element and the light receiving surface of the light receiving element. By bending the lead frame in this way, one metal plate can be processed to simultaneously form four lead frames, and the cost of the optical coupling device can be kept low.

【0019】このとき、リードフレームの実装面を傾斜
させることなどにより発光素子の受光面や受光素子の受
光面を傾斜させ、例えば受光素子の受光面を発光素子の
法線とほぼ垂直方向に配置すれば、より一層受光効率を
向上させることができる。
At this time, the light-receiving surface of the light-emitting element or the light-receiving surface of the light-receiving element is tilted by inclining the mounting surface of the lead frame, and the light-receiving surface of the light-receiving element is arranged substantially perpendicular to the normal line of the light-emitting element. If so, the light receiving efficiency can be further improved.

【0020】本発明の半導体発光素子は、半導体発光素
子本体の上面または下面に部分的に電極を形成している
ので、半導体発光素子本体から出射された光が電極によ
って遮られる部分を少なくすることができ、光の利用率
を高めることができる。このとき、電極を半導体発光素
子本体の上面外周域若しくは下面外周域に電極を形成す
れば、上記光結合装置においてリードフレームの開口部
に合わせて発光素子の電極をリードフレーム上に直接実
装することができ、出射された光がリードフレームによ
り遮げられることがない。
In the semiconductor light emitting device of the present invention, the electrode is partially formed on the upper surface or the lower surface of the semiconductor light emitting device body, so that the light emitted from the semiconductor light emitting device body is less likely to be blocked by the electrode. Therefore, the light utilization rate can be increased. At this time, if the electrodes are formed on the upper peripheral area or the lower peripheral area of the semiconductor light emitting element body, the electrodes of the light emitting element can be directly mounted on the lead frame in accordance with the openings of the lead frame in the optical coupling device. Therefore, the emitted light is not blocked by the lead frame.

【0021】さらに、半導体発光素子上面の電極と下面
の電極とが互いに重なり合わないように各電極を形成す
れば、発光素子の光利用率をさらに上げることができ
る。
Further, by forming each electrode so that the electrode on the upper surface of the semiconductor light emitting element and the electrode on the lower surface do not overlap each other, the light utilization rate of the light emitting element can be further increased.

【0022】したがって、このような半導体発光素子を
利用すればさらに信号伝達効率の高い光結合装置を提供
することができる。
Therefore, by using such a semiconductor light emitting device, an optical coupling device having higher signal transmission efficiency can be provided.

【0023】本発明の継電器においては、上記光結合装
置を備えているので出力信号制御手段の駆動電流又は電
圧を増加させ、継電器の応答速度を速くすることができ
る。また、信号伝達効率がよいので小さな発光量で出力
信号制御手段を駆動させることができ、小さな発光素子
の駆動電流で継電器をON/OFF制御することができ
る。さらに、光結合装置を安価に利用することができる
ので効率のよい継電器を低コストで提供できる。
Since the relay of the present invention is provided with the above-mentioned optical coupling device, it is possible to increase the drive current or voltage of the output signal control means and increase the response speed of the relay. Further, since the signal transmission efficiency is good, the output signal control means can be driven with a small amount of light emission, and the relay can be ON / OFF controlled with a small drive current of the light emitting element. Further, since the optical coupling device can be used at low cost, an efficient relay can be provided at low cost.

【0024】[0024]

【実施例】図1(a)(b)(c)はそれぞれ本発明の
一実施例である光結合装置Aの構造を示す概略平断面
図、概略側断面図及び概略正断面図である。1はLED
などの発光素子、2はフォトダイオードやフォトトラン
ジスタなどの受光素子、3a,3bはそれぞれ発光側リ
ードフレーム、4a,4bはそれぞれ受光側リードフレ
ームである。平面直線状に形成された一方の発光側リー
ドフレーム3aの先端には内側に飛び出すようにして発
光素子実装部5が形成されており、残る発光側リードフ
レーム3bは階段状に形成されてその先端は発光素子実
装部5に近接されている。また、発光側リードフレーム
3a,3bと対称となるように一対の受光側リードフレ
ーム4a,4bが形成され、平面直線状に形成された一
方の受光側リードフレーム4aの先端には内側に飛び出
すようにして受光素子実装部6が形成され、残る受光側
リードフレーム4bは階段状に形成されてその先端は受
光素子実装部6に近接されている。これら発光側及び受
光側の4つのリードフレーム3a,3b,4a,4bは
1枚の金属板から打ち抜きやエッチング加工などによっ
て同時に作成されており、一対の発光側リードフレーム
3a,3bはそれぞれ上側に折り曲げられ、受光側リー
ドフレーム4a,4bと所定の間隔で平行になるように
配置されている。また、受光側リードフレーム4a,4
bを下側に折り曲げるように配置することもできる。発
光素子実装部5の先端には略コの字状の開口部7が設け
られており、この開口部7にLEDなどの発光素子1の
発光窓が位置するようにして発光素子実装部5の上面に
導電性樹脂等によって発光素子1が実装され、残る発光
側リードフレーム3bとの間に金線8が配線されてい
る。この時、発光素子1には後述するように発光面の両
端に電極が形成され、電極に挟まれるようにして発光窓
が開口されたものを用いるのが望ましい。また、受光素
子実装部6の上面には受光面を上にして受光素子2が導
電性樹脂等によって実装されており、残る受光側リード
フレーム4bとの間に金線8が配線されている。また、
受光素子2は発光素子1の斜め下方に位置するように発
光側リードフレーム3a,3bと受光側リードフレーム
4a,4bとが配置されており、受光素子2から出射さ
れた光信号Lは開口部7から受光素子2に直接受光され
るようになっている。このようにして発光素子1が実装
された一対の発光側リードフレーム3a,3b及び受光
素子2が実装された一対の受光側リードフレーム4a,
4bは例えばシリコン樹脂などのような透明樹脂9によ
り覆われて固定され、さらに透明樹脂9の外部は封止樹
脂10により覆われている。この封止樹脂10は例えば
エポシキ樹脂などから低圧成形により形成することがで
きるが、この方法以外の方法により封止樹脂10を形成
することとしてもよい。
1 (a), 1 (b) and 1 (c) are a schematic plan sectional view, a schematic side sectional view and a schematic front sectional view, respectively, showing the structure of an optical coupling device A according to an embodiment of the present invention. 1 is LED
Is a light emitting element such as a photodiode or a phototransistor, 3a and 3b are light emitting side lead frames, and 4a and 4b are light receiving side lead frames. A light emitting element mounting portion 5 is formed at the tip of one light emitting side lead frame 3a formed in a linear shape so as to project inward, and the remaining light emitting side lead frame 3b is formed in a stepwise shape and its tip is formed. Are close to the light emitting element mounting portion 5. Further, a pair of light-receiving side lead frames 4a, 4b is formed so as to be symmetrical with the light-emitting side lead frames 3a, 3b, and one of the light-receiving side lead frames 4a formed in a plane linear shape is projected inward at the tip thereof. Thus, the light receiving element mounting portion 6 is formed, and the remaining light receiving side lead frame 4b is formed in a step shape, and the tip thereof is close to the light receiving element mounting portion 6. These four light emitting side and light receiving side lead frames 3a, 3b, 4a, 4b are made at the same time by punching or etching from a single metal plate, and the pair of light emitting side lead frames 3a, 3b are respectively placed on the upper side. It is bent and arranged so as to be parallel to the light-receiving side lead frames 4a and 4b at a predetermined interval. In addition, the light receiving side lead frames 4a, 4
It is also possible to arrange so that b is bent downward. A substantially U-shaped opening 7 is provided at the tip of the light emitting element mounting portion 5, and the light emitting window of the light emitting element 1 such as an LED is positioned in the opening 7 so that the light emitting element mounting portion 5 has The light emitting element 1 is mounted on the upper surface by a conductive resin or the like, and the gold wire 8 is laid between the remaining light emitting side lead frame 3b. At this time, it is desirable to use the light emitting element 1 in which electrodes are formed at both ends of the light emitting surface and a light emitting window is opened so as to be sandwiched between the electrodes, as described later. Further, the light receiving element 2 is mounted on the upper surface of the light receiving element mounting portion 6 with the light receiving surface facing upward by a conductive resin or the like, and the gold wire 8 is wired between the remaining light receiving side lead frame 4b. Also,
The light receiving element 2 has light emitting side lead frames 3a and 3b and light receiving side lead frames 4a and 4b arranged obliquely below the light emitting element 1, and the optical signal L emitted from the light receiving element 2 is opened. The light receiving element 2 receives the light directly from 7. In this way, the pair of light emitting side lead frames 3a, 3b on which the light emitting element 1 is mounted and the pair of light receiving side lead frames 4a on which the light receiving element 2 is mounted,
4b is fixed by being covered with a transparent resin 9 such as silicon resin, and the outside of the transparent resin 9 is covered with a sealing resin 10. The sealing resin 10 can be formed from, for example, epoxy resin by low pressure molding, but the sealing resin 10 may be formed by a method other than this method.

【0025】しかして発光側リードフレーム3a,3b
に入力信号が入力されると、入力信号に応じて発光素子
1によって光信号Lに変換され、開口部7から受光素子
2に向けて光信号Lは出射される。出射された光信号L
は透明樹脂9を透過して直接受光素子2に受光される。
受光素子2によって受光された光信号Lは再び電気信号
に変換され、受光側リードフレーム4a,4bより出力
される。
Therefore, the light emitting side lead frames 3a, 3b
When an input signal is input to, the light emitting element 1 converts it into an optical signal L according to the input signal, and the optical signal L is emitted from the opening 7 toward the light receiving element 2. Emitted optical signal L
Is transmitted through the transparent resin 9 and directly received by the light receiving element 2.
The optical signal L received by the light receiving element 2 is converted into an electric signal again and output from the light receiving side lead frames 4a and 4b.

【0026】この光結合装置Aにおいては発光素子1か
ら出射された光信号Lを直接受光素子2で受光すること
ができるので、信号伝達効率がよく大きな出力を得るこ
とができる。また、発光素子1及び受光素子2のいずれ
をも発光側リードフレーム3aおよび受光側リードフレ
ーム4aの同一面方向(リードフレーム上面)に実装す
ることができるので製造工程が複雑になることもない。
しかも発光側リードフレーム3a,3bを折り曲げて、
受光素子2が発光素子1の斜め下方に位置するようにし
ているので発光側及び受光側の4つのリードフレーム3
a,3b,4a,4bは1枚の金属板より作成すること
ができ、製造コストを低く抑えることができる。
In this optical coupling device A, since the optical signal L emitted from the light emitting element 1 can be directly received by the light receiving element 2, the signal transmission efficiency is good and a large output can be obtained. Further, since both the light emitting element 1 and the light receiving element 2 can be mounted in the same plane direction (lead frame upper surface) of the light emitting side lead frame 3a and the light receiving side lead frame 4a, the manufacturing process is not complicated.
Moreover, by bending the light emitting side lead frames 3a and 3b,
Since the light receiving element 2 is positioned diagonally below the light emitting element 1, the four lead frames 3 on the light emitting side and the light receiving side are provided.
Since a, 3b, 4a and 4b can be made from one metal plate, the manufacturing cost can be kept low.

【0027】図2(a)(b)(c)に示すものはそれ
ぞれ本発明の一実施例である半導体発光素子1の構造を
示す平面図、正面図及び底面図である。この半導体発光
素子1はシングル−ヘテロ構造をした発光ダイオードを
示すものであって、n−GaAs基板11の上に例えば
液相エピタキシャル成長法(LPE法)などによってn
−GaAsクラッド層12を成長させ、さらにp−Ga
As活性層13を成長させてある。また、p−GaAs
活性層13上面の両端部には帯状の表面電極14を形成
し、n−GaAs基板11の裏面にはほぼ中央に円形の
裏面電極15を形成してある。この表面電極14及び裏
面電極15は互いに重なり合わないように形成されてお
り、したがってこの発光素子1にあっては、活性層13
で発生して上方へ向う光の一部は露出された活性層13
表面つまり表面発光窓17から発光素子1上方へと出射
され、残る光は表面電極14により反射され、露出され
た基板裏面つまり発光窓18から発光素子1下方へと出
射される。また、活性層13で発生して下方へ向う光の
一部は裏面発光窓18から発光素子1下方へと出射さ
れ、残りの光は裏面電極15により反射され表面発光窓
17から発光素子1上方へと出射される。このため、活
性層13で発生された光のほとんどを発光素子1の表面
発光窓17及び裏面発光窓18より取り出すことがで
き、半導体発光素子1の光利用率を高くすることができ
る。
2A, 2B, and 2C are a plan view, a front view, and a bottom view, respectively, showing the structure of the semiconductor light emitting device 1 according to one embodiment of the present invention. This semiconductor light-emitting device 1 is a light-emitting diode having a single-hetero structure, and is formed on an n-GaAs substrate 11 by, for example, a liquid phase epitaxial growth method (LPE method).
A GaAs clad layer 12 is grown, and then p-Ga
The As active layer 13 is grown. In addition, p-GaAs
Band-shaped front surface electrodes 14 are formed on both ends of the upper surface of the active layer 13, and a circular back surface electrode 15 is formed on the rear surface of the n-GaAs substrate 11 at substantially the center. The front surface electrode 14 and the back surface electrode 15 are formed so as not to overlap with each other. Therefore, in the light emitting element 1, the active layer 13 is formed.
Part of the light generated in the above and directed upward is exposed in the active layer 13
The light emitted from the front surface, that is, the surface light emitting window 17 is emitted upward from the light emitting element 1, and the remaining light is reflected by the front surface electrode 14, and emitted from the exposed back surface of the substrate, that is, the light emitting window 18, downward to the light emitting element 1. Further, a part of the light generated in the active layer 13 and directed downward is emitted from the backside light emitting window 18 to the lower side of the light emitting element 1, and the remaining light is reflected by the backside electrode 15 and from the front surface emitting window 17 to the upper side of the light emitting element 1. Is emitted to. Therefore, most of the light generated in the active layer 13 can be extracted from the front surface emission window 17 and the back surface emission window 18 of the light emitting element 1, and the light utilization rate of the semiconductor light emitting element 1 can be increased.

【0028】このような構造をした発光素子1の表面発
光窓17を下に向けて開口部7に位置させ、表面電極1
4を発光素子実装部5上に実装して光結合装置Bを構成
すれば、図3に示すように表面発光窓17から発光素子
1下方へ出射された光信号Lは受光素子2により直接受
光されるのみならず、裏面発光窓18から発光素子1上
方へ出射された光信号Lも透明樹脂9と封止樹脂10と
の界面により反射されて受光素子2に受光される。した
がって、発光素子1により発生された光のほどんどを有
効に利用することができ、光結合装置Bにおける信号伝
達効率を一層向上させ、さらに大きな出力を取り出すこ
とができる。
The surface emitting window 17 of the light emitting device 1 having such a structure is positioned downward in the opening 7, and the surface electrode 1
4 is mounted on the light emitting element mounting portion 5 to configure the optical coupling device B, the optical signal L emitted from the surface light emitting window 17 to the lower side of the light emitting element 1 is directly received by the light receiving element 2 as shown in FIG. In addition to the above, the optical signal L emitted from the rear light emitting window 18 to the upper side of the light emitting element 1 is also reflected by the interface between the transparent resin 9 and the sealing resin 10 and received by the light receiving element 2. Therefore, most of the light generated by the light emitting element 1 can be effectively used, the signal transmission efficiency in the optical coupling device B can be further improved, and a larger output can be taken out.

【0029】また、図2(a)に示したように表面電極
14を活性層13の端部に帯状に形成しておくと、この
表面電極14を開口部7両側の発光素子実装部5に位置
させて実装することができ、無駄なく表面発光窓17か
ら出射された光信号Lを開口部7から受光素子2に受光
させることができる。なお、例えば約30μm程度の実
装精度を有するダイボンディング装置を用いれば、約1
00μm程度の電極幅で十分に精度よく発光素子実装部
5上に実装することができる。
As shown in FIG. 2A, when the surface electrode 14 is formed in a strip shape at the end of the active layer 13, the surface electrode 14 is formed on the light emitting element mounting portions 5 on both sides of the opening 7. The optical signal L emitted from the surface emission window 17 can be received by the light receiving element 2 through the opening 7 without any waste. If a die bonding apparatus having a mounting accuracy of about 30 μm is used, about 1
The electrode width of about 00 μm can be mounted on the light emitting element mounting portion 5 with sufficient accuracy.

【0030】なお、本発明の発光素子1の構造はこれ以
外の構造の発光素子1にも適用することが可能で、ダブ
ルヘテロ構造やホモ構造のものにも適用することができ
る。また、InGaAsP/InP系などの他の材料で
も同様な効果を奏することができ、発光ダイオードに限
られることもなく例えば半導体レーザにも適用が可能で
ある。
The structure of the light emitting device 1 of the present invention can be applied to the light emitting devices 1 having other structures, such as a double hetero structure or a homo structure. The same effect can be obtained with other materials such as InGaAsP / InP series, and the present invention is not limited to light emitting diodes and can be applied to, for example, semiconductor lasers.

【0031】図4に示すものは本発明の別な実施例であ
る光結合装置Cであって、図4(a)(b)(c)はそ
れぞれ光結合装置Cの構造を示す概略平断面図、概略側
断面図及び概略正断面図である。この光結合装置Cにあ
っては発光側及び受光側の4本のリードフレーム3a,
3b,4a,4bはそれぞれ平面直線状に形成され、2
本の発光側リードフレーム3a,3b及び2本の受光側
リードフレーム4a,4bはそれぞれ平行となるように
配置されている。さらに、発光側リードフレーム3a,
3bはそれぞれ上方に折り曲げられて受光側リードフレ
ーム4a,4bと所定の間隔を設けて平行となるように
配置され、受光素子2は発光素子1の斜め下方に配置さ
れている。また、発光側リードフレーム3aの先端には
発光素子実装部5が形成されており、その先端にはコの
字状の開口部7が設けられ、開口部7の位置に合わせて
発光素子1が実装されている。また、受光側リードフレ
ーム4aの先端には受光素子実装部6が形成されてお
り、受光素子2が受光素子実装部6に実装されている。
このように簡単な形状のリードフレーム3a,3b,4
a,4bを作成するだけで、信号伝達効率のよい光結合
装置Cを作成することもできる。
FIG. 4 shows an optical coupling device C which is another embodiment of the present invention, and FIGS. 4 (a), (b) and (c) are schematic plan sectional views showing the structure of the optical coupling device C, respectively. It is a figure, a schematic side sectional view, and a schematic right sectional view. In this optical coupling device C, four lead frames 3a on the light emitting side and the light receiving side are provided.
3b, 4a and 4b are each formed in a plane straight line shape, and
The light emitting side lead frames 3a and 3b and the two light receiving side lead frames 4a and 4b are arranged in parallel with each other. Further, the light emitting side lead frame 3a,
3b is bent upward and is arranged in parallel with the light-receiving side lead frames 4a and 4b at a predetermined interval, and the light-receiving element 2 is arranged obliquely below the light-emitting element 1. Further, a light emitting element mounting portion 5 is formed at the tip of the light emitting side lead frame 3a, and a U-shaped opening 7 is provided at the tip, and the light emitting element 1 is aligned with the position of the opening 7. It is implemented. A light receiving element mounting portion 6 is formed at the tip of the light receiving side lead frame 4 a, and the light receiving element 2 is mounted on the light receiving element mounting portion 6.
The lead frames 3a, 3b, 4 having such a simple shape are
An optical coupling device C having a high signal transmission efficiency can be produced by simply producing a and 4b.

【0032】さらに図5には本発明のさらに別な実施例
である光結合装置Dの構造を示す。この光結合装置Dに
あっては、発光素子実装部5には矩形状の開口部7が設
けられており、この開口部7に位置させるようにして発
光素子1が実装されている。このように矩形状の開口部
7を設け、この開口部7から光信号Lを出射させること
にすることにしてもよい。また、この場合には発光素子
1の表面発光窓17と開口部7の形状とが一致するよう
に表面電極14が角枠状に形成された発光素子1を用い
るのが望ましい。また開口部7の形状は矩形状に限ら
ず、円形や楕円状などに形成することにしてもよい。
Further, FIG. 5 shows the structure of an optical coupling device D which is still another embodiment of the present invention. In this optical coupling device D, the light emitting element mounting portion 5 is provided with a rectangular opening 7, and the light emitting element 1 is mounted so as to be positioned in the opening 7. The rectangular opening 7 may be provided in this way, and the optical signal L may be emitted from the opening 7. Further, in this case, it is desirable to use the light emitting element 1 in which the surface electrode 14 is formed in a rectangular frame shape so that the surface light emitting window 17 of the light emitting element 1 and the shape of the opening 7 are matched. Further, the shape of the opening 7 is not limited to the rectangular shape, but may be formed into a circular shape, an elliptical shape, or the like.

【0033】図6(a)(b)(c)はそれぞれ本発明
のさらに別な実施例である光結合装置Eの構造を示す概
略平断面図、概略側断面図及び概略正断面図である。発
光素子1から出射される光は一般にはランバート放射さ
れる。したがって、以上に述べた各実施例にあっては受
光素子2は発光素子1の斜め下方に位置するように配置
していたので、受光効率の観点からするとまだ低いもの
となっていた。そこで、光結合装置Eにあっては図6に
示すように発光素子実装部5を折り曲げ、発光素子1の
法線が受光素子2の受光面を向くように発光素子1の発
光面を傾斜させてある。このようにして発光面を傾斜さ
せておけばさらに信号伝達効率を向上させることができ
る。また、受光素子実装部6を折り曲げ、受光面を傾斜
させることによっても同様の効果を得ることができる。
FIGS. 6A, 6B and 6C are a schematic plan sectional view, a schematic side sectional view and a schematic normal sectional view showing the structure of an optical coupling device E which is still another embodiment of the present invention. . The light emitted from the light emitting element 1 is generally Lambertian emitted. Therefore, in each of the above-described embodiments, the light receiving element 2 is arranged obliquely below the light emitting element 1, and therefore it is still low in terms of light receiving efficiency. Therefore, in the optical coupling device E, the light emitting element mounting portion 5 is bent as shown in FIG. 6, and the light emitting surface of the light emitting element 1 is inclined so that the normal line of the light emitting element 1 faces the light receiving surface of the light receiving element 2. There is. By thus inclining the light emitting surface, the signal transmission efficiency can be further improved. The same effect can be obtained by bending the light receiving element mounting portion 6 and inclining the light receiving surface.

【0034】さらに、図7に示す光結合装置Fのように
発光側リードフレーム3aの発光素子実装部5のみを折
り曲げることにより、受光素子2の受光面をできるだけ
発光素子1の法線方向に向くように傾斜させて、受光素
子2を発光素子1の斜め下方に位置させることにしても
よい。こうすれば発光側リードフレーム3bを折り曲げ
る必要がなく、光結合装置Fの製造工程を簡略化するこ
とができる。さらに、図8に示す光結合装置Gのように
発光素子実装部5と受光素子実装部6を共に折り曲げ、
受光素子2の受光面と発光素子1の法線方向とが垂直に
なるようにしても良い。また図示はしないが傾斜を持た
せたシリコン製の台座などを受光素子2と受光素子実装
部6との間に挟み込んで、受光素子2の受光面に傾斜を
持たせるようにしてもよい。もちろん発光素子1と受光
素子実装部5との間に台座を設けてもよい。
Further, by bending only the light emitting element mounting portion 5 of the light emitting side lead frame 3a as in the optical coupling device F shown in FIG. 7, the light receiving surface of the light receiving element 2 is oriented in the normal direction of the light emitting element 1 as much as possible. As described above, the light receiving element 2 may be positioned obliquely below the light emitting element 1 by inclining as described above. By doing so, it is not necessary to bend the light emitting side lead frame 3b, and the manufacturing process of the optical coupling device F can be simplified. Further, as in the optical coupling device G shown in FIG. 8, both the light emitting element mounting portion 5 and the light receiving element mounting portion 6 are bent,
The light receiving surface of the light receiving element 2 and the normal line direction of the light emitting element 1 may be perpendicular to each other. Although not shown, a tilted silicon pedestal or the like may be sandwiched between the light receiving element 2 and the light receiving element mounting portion 6 so that the light receiving surface of the light receiving element 2 is tilted. Of course, a pedestal may be provided between the light emitting element 1 and the light receiving element mounting portion 5.

【0035】図9(a)(b)(c)に示すものは本発
明のさらに別な実施例である光結合装置Hの構造を示す
概略平断面図、概略側断面図及び概略正断面図である。
この光結合装置Hにあっては、受光側リードフレーム4
a,4bが上方に折り曲げられ、受光素子2は発光素子
1の斜め上方に配置されている。受光素子実装部6に
は、矩形状若しくは略コの字状の開口部7が設けられて
おり、開口部7の位置に合わせて受光素子2が受光側リ
ードフレーム4a上面に受光面を下にして実装されてい
る。発光素子1は発光面を上にして発光素子実装部5の
上面に実装されていて、発光素子1の発光面から出射さ
れた光信号Lは開口部7を通過して受光素子2によって
直接受光される。一般的に受光素子2は発光素子1より
も大きいため、このように受光素子実装部6に開口部7
を設け、開口部7に位置させて受光素子2を実装する方
が、発光素子1を開口部7に位置させて実装する場合に
比べて容易である。
9A, 9B and 9C are schematic plan sectional views, schematic side sectional views and schematic normal sectional views showing the structure of an optical coupling device H which is still another embodiment of the present invention. Is.
In this optical coupling device H, the light receiving side lead frame 4
a and 4b are bent upward, and the light receiving element 2 is arranged diagonally above the light emitting element 1. The light-receiving element mounting portion 6 is provided with a rectangular or substantially U-shaped opening 7, and the light-receiving element 2 is placed on the upper surface of the light-receiving side lead frame 4a with the light-receiving surface facing down according to the position of the opening 7. Has been implemented. The light emitting element 1 is mounted on the upper surface of the light emitting element mounting portion 5 with the light emitting surface facing upward, and the optical signal L emitted from the light emitting surface of the light emitting element 1 passes through the opening 7 and is directly received by the light receiving element 2. To be done. Since the light receiving element 2 is generally larger than the light emitting element 1, the light receiving element mounting portion 6 has the opening 7
It is easier to dispose the light emitting element 1 in the opening portion 7 and mount the light receiving element 2 in the opening portion 7 than to mount the light emitting element 1 in the opening portion 7.

【0036】図10に示すものは本発明の一実施例であ
るソリッドステートリレー(SSR)Iの概略等価回路
図であって、入力端子11,11間に入力信号が印加さ
れている間は出力端子12,12間をON又はOFFに
し、入力信号によって出力端子12,12間に接続され
た回路をON/OFF制御することができるようになっ
ている。このソリッドステートリレーIは、本発明の光
結合装置例えば第1の実施例である光結合装置Aと光結
合装置Aの受光素子2の出力に応じて出力端子12,1
2間をON/OFF制御するための出力信号制御回路1
3等から構成されており、出力信号制御回路13は例え
ばMOS−FET(MOS電界効果型トランジスタ)な
どから構成されている。しかして入力端子11,11間
に入力信号が印加されると、光結合装置Aの発光素子1
から受光素子2に向けて光信号Lが出射され、受光素子
2は出射された光信号Lを受光すると出力信号制御回路
13に電気信号を出力する。出力信号制御回路13に受
光素子2から電気信号が入力されると、その電気信号に
応じて例えば出力端子12,12間をON制御する。し
たがって、入力端子11,11間に入力信号を印加する
ことにより、入力端子11,11間と出力端子12,1
2間とを電気的な絶縁状態を保ちながら出力端子12,
12間をON/OFF制御することができる。
FIG. 10 is a schematic equivalent circuit diagram of a solid state relay (SSR) I which is an embodiment of the present invention, in which an output is provided while an input signal is applied between the input terminals 11 and 11. The terminals 12 and 12 can be turned on or off, and the circuit connected between the output terminals 12 and 12 can be turned on / off by an input signal. This solid-state relay I has output terminals 12, 1 according to the outputs of the optical coupling device of the present invention, for example, the optical coupling device A of the first embodiment and the light receiving element 2 of the optical coupling device A.
Output signal control circuit 1 for ON / OFF control between the two
3 and the like, and the output signal control circuit 13 is composed of, for example, a MOS-FET (MOS field effect transistor). Then, when an input signal is applied between the input terminals 11 and 11, the light emitting element 1 of the optical coupling device A is
The optical signal L is emitted from the light receiving element 2 toward the light receiving element 2, and the light receiving element 2 outputs an electric signal to the output signal control circuit 13 when receiving the emitted optical signal L. When an electric signal is input from the light receiving element 2 to the output signal control circuit 13, for example, ON control is performed between the output terminals 12 and 12 according to the electric signal. Therefore, by applying an input signal between the input terminals 11 and 11, the input terminals 11 and 11 and the output terminals 12 and 1 are connected.
While maintaining electrical insulation between the two, the output terminal 12,
It is possible to control ON / OFF between the 12 terminals.

【0037】このソリッドステートリレーIにあって
は、光結合装置Aからの出力が大きいのでMOS−FE
T駆動電圧の増加を図ることができ、ソリッドステート
リレーIのON時間が短くなり、高速動作を可能にする
ことができる。また、光結合装置Aの信号伝達効率が高
いので、小さい発光量で出力端子12,12間をON/
OFF制御できるので、入力端子11,11に印加する
発光素子駆動電流の低減を図ることができる。さらに
は、光結合装置Aのコストを低く抑えることができるの
で、ソリッドステートリレーIのコスト低減を図ること
ができる。
In this solid state relay I, since the output from the optical coupling device A is large, the MOS-FE
The T drive voltage can be increased, the ON time of the solid state relay I can be shortened, and high speed operation can be enabled. In addition, since the signal transmission efficiency of the optical coupling device A is high, ON / OFF between the output terminals 12 and 12 can be performed with a small light emission amount.
Since the OFF control can be performed, the light emitting element drive current applied to the input terminals 11 and 11 can be reduced. Furthermore, since the cost of the optical coupling device A can be kept low, the cost of the solid state relay I can be reduced.

【0038】なお、本実施例にあってはMOS−FET
を用いたソリッドステートリレーIについて説明した
が、これ以外にも例えばトランジスタを用いた出力信号
制御回路を有するソリッドステートリレーにも応用する
ことができる。また、本発明の光結合装置はソリッドス
テートリレーのみならず、アイソレーション回路などさ
まざまな応用例が考えられるのはいうまでもない。
In this embodiment, the MOS-FET is
Although the solid state relay I using the above has been described, it can be applied to a solid state relay having an output signal control circuit using a transistor other than this. Needless to say, the optical coupling device of the present invention is not limited to solid-state relays and can be applied to various applications such as isolation circuits.

【0039】[0039]

【発明の効果】本発明の光結合装置にあっては、発光素
子が実装されたリードフレームの開口部から光信号を出
射し若しくは受光素子が実装されたリードフレームの開
口部から光信号を受光することができるので、光結合装
置の信号伝達効率を高めることができる。このとき、発
光素子の発光面や受光素子の受光面をそれぞれ開口部を
有するリードフレームに実装すれば、リードフレームの
同一面側に実装することができるので、製造工程を簡略
化することができる。また、発光素子の発光面と受光素
子の受光面とを対向させておくと、発光素子から出射さ
れた出射光を直接受光素子の受光面で受光することがで
き、受光効率もよい。
In the optical coupling device of the present invention, an optical signal is emitted from the opening of the lead frame on which the light emitting element is mounted, or an optical signal is received from the opening of the lead frame on which the light receiving element is mounted. Therefore, the signal transmission efficiency of the optical coupling device can be improved. At this time, if the light emitting surface of the light emitting element and the light receiving surface of the light receiving element are mounted on a lead frame having openings, respectively, the mounting can be performed on the same surface side of the lead frame, thus simplifying the manufacturing process. . Further, when the light emitting surface of the light emitting element and the light receiving surface of the light receiving element are opposed to each other, the emitted light emitted from the light emitting element can be directly received by the light receiving surface of the light receiving element, and the light receiving efficiency is also good.

【0040】また、リードフレームを曲げて発光素子の
発光面と受光素子の受光面とに段差を設けることにすれ
ば、一枚の金属板より4つのリードフレームを作成する
ことができ、光結合装置のコストを低く抑えることがで
きる。
Further, by bending the lead frame and providing a step between the light emitting surface of the light emitting element and the light receiving surface of the light receiving element, four lead frames can be formed from one metal plate, and the optical coupling is achieved. The cost of the device can be kept low.

【0041】さらに、リードフレームの実装面を傾斜さ
せることなどにより、発光素子の発光面若しくは受光素
子の受光面を傾斜させているので、例えば受光面を発光
素子の法線方向とほぼ垂直に位置させれば、さらに光結
合装置の信号伝達効率を上げることができる。
Furthermore, since the light emitting surface of the light emitting element or the light receiving surface of the light receiving element is inclined by inclining the mounting surface of the lead frame, for example, the light receiving surface is positioned substantially perpendicular to the normal line direction of the light emitting element. By doing so, the signal transmission efficiency of the optical coupling device can be further improved.

【0042】本発明の半導体発光素子によれば、半導体
発光素子本体の上面及び下面にそれぞれ部分的に電極を
形成しているので、半導体発光素子本体から出射された
光を有効に利用することができる。このとき、半導体発
光素子本体の上面外周域若しくは下面外周域に電極を形
成すれば本発明の光結合装置のリードフレーム開口部に
位置させて電極を直接リードフレーム上に実装すること
ができる。このとき、半導体発光素子本体上面の電極と
下面の電極とを重なり合わないように形成しておけばさ
らに半導体発光素子の光利用率を上げることができる。
According to the semiconductor light emitting device of the present invention, since the electrodes are partially formed on the upper surface and the lower surface of the semiconductor light emitting device body, the light emitted from the semiconductor light emitting device body can be effectively used. it can. At this time, if the electrode is formed on the upper peripheral area or the lower peripheral area of the semiconductor light emitting element body, the electrode can be directly mounted on the lead frame while being positioned in the lead frame opening of the optical coupling device of the present invention. At this time, if the electrode on the upper surface of the semiconductor light emitting element body and the electrode on the lower surface are formed so as not to overlap with each other, the light utilization rate of the semiconductor light emitting element can be further increased.

【0043】したがって、このような半導体発光素子を
本発明の光結合装置に用いることにすればさらに信号伝
達効率のよい光結合装置を提供することができる。
Therefore, if such a semiconductor light emitting element is used in the optical coupling device of the present invention, it is possible to provide an optical coupling device with higher signal transmission efficiency.

【0044】また、本発明の継電器においては、応答速
度が速く、小さな発光素子の駆動電流で継電器をON/
OFF制御することができる効率のよい継電器を低コス
トで提供することができる。
Further, in the relay of the present invention, the response speed is fast, and the relay is turned on / off with a driving current of a small light emitting element.
An efficient relay that can be turned off can be provided at low cost.

【図面の簡単な説明】[Brief description of drawings]

【図1】(a)(b)(c)はそれぞれ本発明の一実施
例である光結合装置の構造を示す概略平断面図、概略側
断面図及び概略正断面図である。
1A, 1B, and 1C are a schematic plan sectional view, a schematic side sectional view, and a schematic front sectional view, respectively, showing the structure of an optical coupling device according to an embodiment of the present invention.

【図2】(a)(b)(c)はそれぞれ本発明の一実施
例である半導体発光素子の構造を示す平面図、側面図及
び底面図である。
2A, 2B, and 2C are a plan view, a side view, and a bottom view, respectively, showing the structure of a semiconductor light emitting device that is an embodiment of the present invention.

【図3】同上の別な実施例である光結合装置の構造を示
す概略側断面図である。
FIG. 3 is a schematic side sectional view showing the structure of an optical coupling device as another embodiment of the above.

【図4】(a)(b)(c)はそれぞれ同上のさらに別
な実施例である光結合装置の構造を示す概略平断面図、
概略側断面図及び概略正断面図である。
4 (a), (b) and (c) are schematic plan sectional views showing the structure of an optical coupling device according to still another embodiment of the same,
It is a schematic side sectional view and a schematic front sectional view.

【図5】(a)(b)(c)はそれぞれ同上のさらに別
な実施例である光結合装置の構造を示す概略平断面図、
概略側断面図及び概略正断面図である。
5 (a), (b) and (c) are schematic plan sectional views showing the structure of an optical coupling device which is still another embodiment of the same.
It is a schematic side sectional view and a schematic front sectional view.

【図6】(a)(b)(c)はそれぞれ同上のさらに別
な実施例である光結合装置の構造を示す概略平断面図、
概略側断面図及び概略正断面図である。
6 (a), (b) and (c) are schematic plan sectional views showing the structure of an optical coupling device according to still another embodiment of the same.
It is a schematic side sectional view and a schematic front sectional view.

【図7】(a)(b)(c)はそれぞれ同上のさらに別
な実施例である光結合装置の構造を示す概略平断面図、
概略側断面図及び概略正断面図である。
7 (a), (b) and (c) are schematic plan sectional views showing the structure of an optical coupling device according to still another embodiment of the same.
It is a schematic side sectional view and a schematic front sectional view.

【図8】(a)(b)(c)はそれぞれ同上のさらに別
な実施例である光結合装置の構造を示す概略平断面図、
概略側断面図及び概略正断面図である。
8 (a), (b) and (c) are schematic plan sectional views showing the structure of an optical coupling device according to still another embodiment of the same,
It is a schematic side sectional view and a schematic front sectional view.

【図9】(a)(b)(c)はそれぞれ同上のさらに別
な実施例である光結合装置の構造を示す概略平断面図、
概略側断面図及び概略正断面図である。
9 (a), (b) and (c) are schematic plan sectional views showing the structure of an optical coupling device according to still another embodiment of the same,
It is a schematic side sectional view and a schematic front sectional view.

【図10】本発明の一実施例である継電器の概略等価回
路図である。
FIG. 10 is a schematic equivalent circuit diagram of a relay which is an embodiment of the present invention.

【図11】従来例である光結合装置の構造を示す概略断
面図である。
FIG. 11 is a schematic cross-sectional view showing the structure of a conventional optical coupling device.

【図12】別な従来例である光結合装置の構造を示す概
略断面図である。
FIG. 12 is a schematic cross-sectional view showing the structure of another conventional optical coupling device.

【符号の説明】[Explanation of symbols]

1 発光素子 2 受光素子 3a,3b 発光側リードフレーム 4a,4b 受光側リードフレーム 5 発光素子実装部 7 開口部 1 Light emitting element 2 Light receiving element 3a, 3b Light emitting side lead frame 4a, 4b Light receiving side lead frame 5 Light emitting element mounting portion 7 Opening

Claims (14)

【特許請求の範囲】[Claims] 【請求項1】 発光素子を実装したリードフレームと受
光素子を実装したリードフレームとを有する光結合装置
において、 少なくともいずれか一方の前記リードフレームに開口部
を有することを特徴とする光結合装置。
1. An optical coupling device having a lead frame having a light emitting element mounted thereon and a lead frame having a light receiving element mounted thereon, wherein at least one of the lead frames has an opening.
【請求項2】 前記開口部に位置させて前記発光素子若
しくは前記受光素子を実装したことを特徴とする請求項
1に記載の光結合装置。
2. The optical coupling device according to claim 1, wherein the light emitting element or the light receiving element is mounted in the opening.
【請求項3】 前記発光素子の発光面側若しくは前記受
光素子の受光面側を当該開口部を有するリードフレーム
に実装したことを特徴とする請求項2に記載の光結合装
置。
3. The optical coupling device according to claim 2, wherein the light emitting surface side of the light emitting element or the light receiving surface side of the light receiving element is mounted on a lead frame having the opening.
【請求項4】 前記発光素子の発光面と前記受光素子の
受光面とを対向させたことを特徴とする請求項1、2又
は3に記載の光結合装置。
4. The optical coupling device according to claim 1, wherein the light emitting surface of the light emitting element and the light receiving surface of the light receiving element face each other.
【請求項5】 前記発光素子を実装したリードフレーム
若しくは前記受光素子を実装したリードフレームを曲げ
て、前記発光素子の発光面と前記受光素子の受光面とに
段差を設けたことを特徴とする請求項1、2、3又は4
に記載の光結合装置。
5. A lead frame on which the light emitting element is mounted or a lead frame on which the light receiving element is mounted is bent to provide a step between the light emitting surface of the light emitting element and the light receiving surface of the light receiving element. Claims 1, 2, 3 or 4
The optical coupling device according to.
【請求項6】 前記発光素子の発光面若しくは前記受光
素子の受光面を傾斜させたことを特徴とする請求項1、
2、3、4又は5に記載の光結合装置。
6. The light emitting surface of the light emitting element or the light receiving surface of the light receiving element is inclined.
The optical coupling device according to 2, 3, 4 or 5.
【請求項7】 前記発光素子を実装したリードフレーム
の実装面若しくは前記受光素子を実装したリードフレー
ムの実装面を傾斜させたことを特徴とする請求項6に記
載の光結合装置。
7. The optical coupling device according to claim 6, wherein the mounting surface of the lead frame on which the light emitting element is mounted or the mounting surface of the lead frame on which the light receiving element is mounted is inclined.
【請求項8】 半導体発光素子本体の上面及び下面に電
極をそれぞれ部分的に形成したことを特徴とする半導体
発光素子。
8. A semiconductor light emitting device, wherein electrodes are partially formed on an upper surface and a lower surface of a semiconductor light emitting device body.
【請求項9】 前記半導体発光素子本体の上面外周域若
しくは下面外周域に電極を形成したことを特徴とする請
求項8に記載の半導体発光素子。
9. The semiconductor light emitting device according to claim 8, wherein an electrode is formed on an upper peripheral region or a lower peripheral region of the semiconductor light emitting device body.
【請求項10】 前記半導体発光素子本体上面の電極と
前記半導体発光素子本体下面の電極とが互いに重なり合
わないように前記各電極を形成したことを特徴とする請
求項8又は9に記載の半導体発光素子。
10. The semiconductor according to claim 8, wherein the electrodes are formed so that an electrode on the upper surface of the semiconductor light emitting element body and an electrode on the lower surface of the semiconductor light emitting element body do not overlap with each other. Light emitting element.
【請求項11】 受光素子と請求項8、9又は10に記
載の半導体発光素子とを備えたことを特徴とする光結合
装置。
11. An optical coupling device comprising a light receiving element and the semiconductor light emitting element according to claim 8, 9, or 10.
【請求項12】 請求項8、9又は10に記載の半導体
発光素子を備えたことを特徴とする請求項1、2、3、
4、5、6又は7に記載の光結合装置。
12. The semiconductor light emitting device according to claim 8, 9, or 10, wherein the semiconductor light emitting device is provided.
The optical coupling device according to 4, 5, 6 or 7.
【請求項13】 請求項1、2、3、4、5、6、7、
11又は12に記載の光結合装置と、 当該光結合装置の発光素子からの電気的出力に基づいて
出力信号を制御する出力信号制御手段とを備えたことを
特徴とする継電器。
13. The method according to claim 1, 2, 3, 4, 5, 6, 7,
11. A relay comprising: the optical coupling device according to item 11 or 12; and an output signal control unit that controls an output signal based on an electrical output from a light emitting element of the optical coupling device.
【請求項14】 前記出力信号制御手段にMOS−FE
Tを用いたことを特徴とする請求項13に記載の継電
器。
14. The output signal control means includes a MOS-FE.
The relay according to claim 13, wherein T is used.
JP6033194A 1994-03-04 1994-03-04 Optical coupling device, semiconductor light-emitting element and relay Pending JPH07244231A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6033194A JPH07244231A (en) 1994-03-04 1994-03-04 Optical coupling device, semiconductor light-emitting element and relay

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6033194A JPH07244231A (en) 1994-03-04 1994-03-04 Optical coupling device, semiconductor light-emitting element and relay

Publications (1)

Publication Number Publication Date
JPH07244231A true JPH07244231A (en) 1995-09-19

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP6033194A Pending JPH07244231A (en) 1994-03-04 1994-03-04 Optical coupling device, semiconductor light-emitting element and relay

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002299543A (en) * 2001-03-29 2002-10-11 Furukawa Electric Co Ltd:The Optical module and lead frame therefor
CN1333526C (en) * 2004-03-03 2007-08-22 夏普株式会社 Solid state relay
KR20110109385A (en) * 2010-03-31 2011-10-06 엘지이노텍 주식회사 Bidirectional light emitting diode package and manufacturing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002299543A (en) * 2001-03-29 2002-10-11 Furukawa Electric Co Ltd:The Optical module and lead frame therefor
JP4550308B2 (en) * 2001-03-29 2010-09-22 古河電気工業株式会社 Optical module and optical module lead frame
CN1333526C (en) * 2004-03-03 2007-08-22 夏普株式会社 Solid state relay
KR20110109385A (en) * 2010-03-31 2011-10-06 엘지이노텍 주식회사 Bidirectional light emitting diode package and manufacturing the same

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