KR20110109385A - Bidirectional light emitting diode package and manufacturing the same - Google Patents

Bidirectional light emitting diode package and manufacturing the same Download PDF

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KR20110109385A
KR20110109385A KR1020100029085A KR20100029085A KR20110109385A KR 20110109385 A KR20110109385 A KR 20110109385A KR 1020100029085 A KR1020100029085 A KR 1020100029085A KR 20100029085 A KR20100029085 A KR 20100029085A KR 20110109385 A KR20110109385 A KR 20110109385A
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light emitting
led
frame
wire
emitting device
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KR101646264B1 (en
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백지흠
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엘지이노텍 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Abstract

본 발명은 일단이 대향하는 애노드 프레임 및 캐소드 프레임의 상, 하에 각각 형성된 제 1, 제 2 LED칩; 상기 제 1, 제 2 LED 칩을 통해 상기 애노드 프레임과 캐소드 프레임을 전기적으로 연결하는 와이어; 및 상기 제 1, 제 2 LED칩, 와이어, 및 상기 프레임들의 와이어 연결부를 매립하도록 형성된 몰딩부를 포함하는 것을 특징으로 하는 양방향 LED 패키지 및 그 제조 방법에 관한 것이다. 이에 의해, 기존의 단 방향 발광 장치를 양방향 발광 장치 형태로 패키지화하여 조명용에 입체적 조명 발광 장치를 만들어 패키지의 원가를 절감하고 광효율을 높여 입체감 있는 조명등을 만들 수 있다.The present invention provides a light emitting device comprising: first and second LED chips each having upper and lower ends of an anode frame and a cathode frame facing each other; A wire electrically connecting the anode frame and the cathode frame through the first and second LED chips; And a molding part formed to bury the first and second LED chips, the wire, and the wire connection part of the frames. Accordingly, by packaging the existing unidirectional light emitting device in the form of a bidirectional light emitting device to create a three-dimensional lighting light emitting device for the illumination it is possible to reduce the cost of the package and increase the light efficiency to create a three-dimensional lighting.

Description

양방향 ＬＥＤ 패키지 및 그 제조 방법{BIDIRECTIONAL LIGHT EMITTING DIODE PACKAGE AND MANUFACTURING THE SAME}Bidirectional LED package and its manufacturing method {BIDIRECTIONAL LIGHT EMITTING DIODE PACKAGE AND MANUFACTURING THE SAME}

본 발명은 LED 패키지 및 그 제조 방법에 관한 것으로서, 더욱 상세하게는, 양면 발광 장치 형태로 패키지화되어 입체적 조명이 가능한 양방향 LED 패키지 및 그 제조 방법에 관한 것이다.The present invention relates to an LED package and a method of manufacturing the same, and more particularly, to a bidirectional LED package and a method of manufacturing the package packaged in the form of a double-sided light emitting device capable of three-dimensional illumination.

발광 다이오드(diode)는 순방향으로 전압을 가했을 때 발광하는 반도체 소자이다. LED (Light Emitting Diode, 엘이디) 라고도 불린다. 발광 원리는 전계 발광 효과를 이용하고 있다. 또한, 수명도 백열전구보다 상당히 길다. 발광색은 사용되는 재료에 따라서 다르며 자외선 영역에서 가시광선, 적외선 영역까지 발광하는 것을 제조할 수 있다. 일리노이 대학의 닉 호로니악이 1962년에 최초로 개발하였다. 또한, 오늘날까지 여러 가지 용도로 사용되었으며 향후 형광등이나 전구를 대체할 광원으로 기대되고 있다.A light emitting diode is a semiconductor device that emits light when a voltage is applied in the forward direction. Also called LED (Light Emitting Diode). The luminous principle utilizes the electroluminescent effect. In addition, the service life is considerably longer than incandescent bulbs. The emission color varies depending on the material used, and it can be produced to emit light from the ultraviolet region to the visible and infrared region. It was first developed in 1962 by Nick Horoniak of the University of Illinois. In addition, it has been used for various purposes to this day and is expected to be a light source to replace a fluorescent lamp or a bulb in the future.

도 1a은 종래 기술에 따른 LED 패키지의 단면도를 나타낸다. 또한, 도 1b는 종래 기술에 따른 LED 패키지의 발광 상태를 나타내는 구조 사시도이다. 도 1a 및 1b를 참조하면, LED 패키지는 발광하는 GaN 화학물 칩에 골드 와이어 (102) 본딩을 통해 도선을 통전시켜 주며 하부에 히트싱크 (10)를 형성하여 열방출을 할 수 있도록 구성된다. 또한, 외부 지지대 및 LED 패키지 부분에 금속 리드 (20)를 와이어 본딩을 통해 전기를 가해주고 빛이 날 수 있는 구조로 되어 있다. 이러한 구조는 개별 칩 (60)마다 하나의 패키지의 형태를 이루고 있다.1A shows a cross-sectional view of an LED package according to the prior art. In addition, Figure 1b is a perspective view showing the light emitting state of the LED package according to the prior art. Referring to FIGS. 1A and 1B, the LED package is configured to conduct conductive wires through bonding a gold wire 102 to a light emitting GaN chemical chip and to form heat sinks 10 at a lower portion thereof to allow heat emission. In addition, the external support and the LED package portion has a structure that can be applied to the electric light through the metal lead 20 through the wire bonding. This structure is in the form of one package for each individual chip 60.

이와 같은 종래의 LED 패키지는 측면부와 상면부 방향으로 빛을 방출하는 형태이다. 이런 경우 조명용으로 사용시, 복수의 LED 패키지를 사용하여 주위를 둘러싸야만 기존의 전구와 같은 전면 방출 조명등으로 사용할 수 있다.Such a conventional LED package is a form that emits light in the side portion and the upper surface direction. In this case, when used for lighting, a plurality of LED packages must be used to enclose the surroundings so that it can be used as a front emission lamp like a conventional bulb.

따라서, 기존의 LED패키지는 입체감 있는 전체 발광 장치로 사용하기에 원가가 증가하고 광효율이 적은 문제점이 있다.Therefore, the existing LED package has a problem of increasing the cost and less light efficiency to use as a three-dimensional overall light emitting device.

본 발명은 상술한 문제를 해결하기 위하여 안출된 것으로, 본 발명의 목적은, 기존의 단방향 발광장치를 양면 발광 장치 형태로 패키지화하여 조명용에 적합한 입체적 조명 발광 장치를 제조할 수 있는 양방향 LED 패키지 및 그 제조방법을 제공하는 데 있다.SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problem, and an object of the present invention is to package a conventional unidirectional light emitting device in the form of a double-sided light emitting device, and a bidirectional LED package capable of manufacturing a three-dimensional lighting light emitting device suitable for lighting, and its It is to provide a manufacturing method.

본 발명의 일 실시형태에 따른 양방향 LED패키지의 구조는, 일단이 대향하는 애노드 프레임 및 캐소드 프레임의 상, 하에 각각 형성된 제 1, 제 2 LED칩; 상기 제 1, 제 2 LED 칩을 통해 상기 애노드 프레임과 캐소드 프레임을 전기적으로 연결하는 와이어; 및 상기 제 1, 제 2 LED칩, 와이어, 및 상기 프레임들의 와이어 연결부를 매립하도록 형성된 몰딩부를 포함하는 것을 특징으로 하여, 하나의 LED 패키지로 입체감 있는 전체 발광을 구현할 수 있다.The structure of the bidirectional LED package according to an embodiment of the present invention, the first and second LED chips formed on the top and bottom of the anode frame and the cathode frame facing each other; A wire electrically connecting the anode frame and the cathode frame through the first and second LED chips; And a molding part formed to fill the first and second LED chips, the wire, and the wire connection part of the frames, thereby realizing three-dimensional whole light emission with one LED package.

여기서, 상기 LED 패키지는, 상기 몰딩부 외각을 매립하도록 형성된 광투과부를 더 포함하여, 광 효율 및 직진성을 개선할 수 있다.The LED package may further include a light transmitting part formed to fill the outer surface of the molding part, thereby improving light efficiency and straightness.

또한, 본 발명의 일 실시형태에 따른 양방향 LED패키지 제조 방법은, (a) 일단이 대향하는 애노드 프레임 및 캐소드 프레임의 일면 위에 제 1 LED칩을 형성하는 단계; (b) 상기 애노드 프레임 및 캐소드 프레임의 타면 위에 제 2 LED칩을 형성하는 단계; (c) 상기 제 1, 제 2LED 칩과 상기 애노드 프레임 및 캐소드 프레임을 와이어로 전기적으로 연결하는 단계; 및 (d) 상기 제 1, 제 2 LED, 와이어, 및 상기 프레임들의 와이어 연결부를 매립하는 몰딩부를 형성하는 단계를 포함하는 것을 특징으로 한다.In addition, the method for manufacturing a bidirectional LED package according to an embodiment of the present invention, (a) forming a first LED chip on one surface of the anode frame and the cathode frame opposite one end; (b) forming a second LED chip on the other surface of the anode frame and the cathode frame; (c) electrically connecting the first and second LED chips with the anode frame and the cathode frame with wires; And (d) forming a molding portion to bury the first and second LEDs, the wires, and wire connections of the frames.

여기서, 상기 LED 패키지 제조 방법은, (e) 상기 몰딩부 외각을 매립하는 광투과부를 형성하는 단계를 더 포함할 수도 있다.
Here, the LED package manufacturing method may further comprise the step of (e) forming a light transmitting portion that fills the outer shell of the molding.

본 발명에 의해, 기존의 단방향 발광 장치를 양방향 발광 장치 형태로 패키지화하여 조명용에 입체적 조명 발광 장치를 만들어 패키지의 원가를 절감하고 광효율을 높여 입체감 있는 조명등을 만들 수 있다.According to the present invention, it is possible to package a conventional unidirectional light emitting device in the form of a bidirectional light emitting device to create a three-dimensional lighting light emitting device for lighting to reduce the cost of the package and increase the light efficiency to create a three-dimensional lighting.

도 1a은 종래 기술에 따른 LED 패키지의 단면도.
도 1b는 종래 기술에 따른 LED 패키지의 발광 상태를 나타내는 구조 사시도.
도 2a은 본 발명의 일 실시형태에 따른 테이프 타입 LED 패키지 제조 공정의 단면도
도 2b는 본 발명에 따른 양방향 LED 도 2b패키지의 구조를 나타내는 단면도1A is a cross-sectional view of an LED package according to the prior art.
Figure 1b is a perspective view showing a light emitting state of the LED package according to the prior art.
2A is a cross-sectional view of a tape type LED package manufacturing process according to one embodiment of the present invention.
Figure 2b is a cross-sectional view showing the structure of the bidirectional LED Figure 2b package according to the present invention

이하에서는 첨부한 도면을 참조하여 양방향 LED 패키지 및 그 제조 방법에 대해서 상세히 설명한다. 다만, 실시형태를 설명함에 있어서, 관련된 공지 기능 혹은 구성에 대한 구체적인 설명이 본 발명의 요지를 불필요하게 흐릴 수 있다고 판단되는 경우 그에 대한 상세한 설명은 생략한다.Hereinafter, a bidirectional LED package and a method of manufacturing the same will be described in detail with reference to the accompanying drawings. In the following description, well-known functions or constructions are not described in detail to avoid unnecessarily obscuring the subject matter of the present invention.

도 2a은 본 발명의 일 실시형태에 따른 테이프 타입 LED 패키지 제조 공정의 단면도이다. 도 2a 를 참조하면, 일단이 마주하는 애노드 프레임 (20a)과 캐소드 프레임 (20b)의 일면 위에 제 1 LED 칩 (60a)을 형성한다 (S1). 그 후, 애노드 프레임 (20a)과 캐소드 프레임 (20b)의 타면, 즉 아랫부분에 제 2 LED 칩 (60b)을 형성한다 (S2). 이와 같이 형성된 LED 칩들 (60a 및 60b)은 미러 형태로 형성되어 양면으로 빛을 방출할 수 있다. 또한, 상기 S1 단계와 S2 단계는 순서가 바뀔 수도 있다. 즉 제 2LED 칩 (60b)을 형성한 후, 제 1LED 칩 (60a)을 형성할 수도 있다. 그 다음 애노드 프레임 (20a), 제 1 LED 칩 (60a), 제 2 LED 칩 (60b), 및 캐소드 프레임 (20b)을 와이어 (102)를 이용하여 전기적으로 연결한다 (S3). 구체적으로는 도시된 바와 같이 대향하는 애노드 프레임 (20a)과 캐소드 프레임 (20b)의 이격공간을 통해 제 1LED칩 (60a)과 제 2 LED칩 (60b)을 와이어 (102)로 연결하며 제 1LED 칩 (60a)과 제 2LED 칩 (60b) 각각으로부터 애노드 프레임 (20a)과 캐소드 프레임 (20b)을 와이어로 연결한다. 그 후, 제 1 (60a), 제 2 LED칩 (60b), 와이어 (102), 및 와이어 (102)가 연결된 프레임 부분을 기존 방식으로 실링하여 몰딩부 (15)를 형성한다 (S4). 그 후, 몰딩부 (15)의 외각을 둘러싸는 광투과부 (120)를 더 형성한다 (S5).2A is a cross-sectional view of a tape type LED package manufacturing process according to one embodiment of the present invention. Referring to FIG. 2A, a first LED chip 60a is formed on one surface of the anode frame 20a and the cathode frame 20b which face one end (S1). Thereafter, the second LED chip 60b is formed on the other surface of the anode frame 20a and the cathode frame 20b, that is, at the bottom (S2). The LED chips 60a and 60b formed as described above may be formed in a mirror shape to emit light to both sides. In addition, the order of steps S1 and S2 may be reversed. That is, after the second LED chip 60b is formed, the first LED chip 60a may be formed. Then, the anode frame 20a, the first LED chip 60a, the second LED chip 60b, and the cathode frame 20b are electrically connected using the wire 102 (S3). Specifically, as shown in the drawing, the first LED chip 60a and the second LED chip 60b are connected to each other by a wire 102 through a space between the opposite anode frame 20a and the cathode frame 20b. The anode frame 20a and the cathode frame 20b are connected by wires from the 60a and the second LED chip 60b, respectively. Thereafter, the molding portion 15 is formed by sealing the first 60a, the second LED chip 60b, the wire 102, and the frame portion to which the wire 102 is connected in a conventional manner (S4). Thereafter, the light transmitting part 120 surrounding the outer shell of the molding part 15 is further formed (S5).

도 2b는 본 발명에 따른 양방향 LED 패키지의 구조를 나타내는 단면도이다. 도 2b를 참조하면, 상하로 위치하는 제 1 (60a), 제 2 LED칩 (60b)으로 인해 양면 발광이 가능하다. 여기서 LED 칩들 (60a 및 60b)은 수직형을 사용하는 것으로 도시되었지만, 회로 배선 변경에 따라 수평형 LED도 패키지화할 수 있다.Figure 2b is a cross-sectional view showing the structure of a bidirectional LED package according to the present invention. Referring to FIG. 2B, light emission of both sides is possible due to the first 60a and the second LED chip 60b positioned up and down. Although the LED chips 60a and 60b are shown as using a vertical type, the horizontal type LEDs may also be packaged according to the circuit wiring change.

이와 같이 본 발명은 기존의 단방향 발광을 입체감 있는 전체 발광장치 형태로 제조하여 패키지 제조의 원가를 절감하고 광효율을 높여 입체감 있는 조명등을 만들 수 있다.As described above, the present invention can manufacture a conventional one-way light emission in the form of a three-dimensional light emitting device having a three-dimensional effect to reduce the cost of the package manufacturing and increase the light efficiency to create a three-dimensional lighting.

전술한 바와 같은 본 발명의 상세한 설명에서는 구체적인 실시예에 관해 설명하였다. 그러나 본 발명의 범주에서 벗어나지 않는 한도 내에서는 여러 가지 변형이 가능하다. 본 발명의 기술적 사상은 본 발명의 전술한 실시예에 국한되어 정해져서는 안 되며, 특허청구범위뿐만 아니라 이 특허청구범위와 균등한 것들에 의해 정해져야 한다.In the foregoing detailed description of the present invention, specific examples have been described. However, various modifications are possible within the scope of the present invention. The technical spirit of the present invention should not be limited to the above-described embodiments of the present invention, but should be determined by the claims and equivalents thereof.

10: 히트 싱크 15: 몰딩부
20: 금속 리드부 20a: 애노드 프레임
20b: 캐소드 프레임 25: 렌즈
30: 스티치 본드 40: 실리콘 서브-마운트
50: 볼 본드 60, 60a, 60b: LED 칩
70: 솔더볼 80: 볼 본드
102: 와이어 120: 광투과부 10: heat sink 15: molding part
20: metal lead portion 20a: anode frame
20b: cathode frame 25: lens
30: stitch bond 40: silicon sub-mount
50: ball bond 60, 60a, 60b: LED chip
70: solder ball 80: ball bond
102: wire 120: light transmitting portion

Claims (4)

일단이 대향하는 애노드 프레임 및 캐소드 프레임의 상, 하에 각각 형성된 제 1, 제 2 LED칩;
상기 제 1, 제 2 LED 칩을 통해 상기 애노드 프레임과 캐소드 프레임을 전기적으로 연결하는 와이어; 및
상기 제 1, 제 2 LED칩, 와이어, 및 상기 프레임들의 와이어 연결부를 매립하도록 형성된 몰딩부를 포함하는 것을 특징으로 하는 양방향 LED 패키지.
First and second LED chips each having upper and lower ends of the anode frame and the cathode frame facing each other;
A wire electrically connecting the anode frame and the cathode frame through the first and second LED chips; And
And a molding part formed to bury the first and second LED chips, a wire, and wire connections of the frames.
제 1항에 있어서,
상기 LED 패키지는,
상기 몰딩부 외각을 매립하도록 형성된 광투과부를 더 포함하는 것을 특징으로 하는 LED 패키지.
The method of claim 1,
The LED package,
The LED package further comprises a light transmitting portion formed to fill the outer shell of the molding.
(a) 일단이 대향하는 애노드 프레임 및 캐소드 프레임의 일면 위에 제 1 LED칩을 형성하는 단계;
(b) 상기 애노드 프레임 및 캐소드 프레임의 타면 위에 제 2 LED칩을 형성하는 단계;
(c) 상기 제 1, 제 2LED 칩과 상기 애노드 프레임 및 캐소드 프레임을 와이어로 전기적으로 연결하는 단계; 및
(d) 상기 제 1, 제 2 LED, 와이어, 및 상기 프레임들의 와이어 연결부를 매립하는 몰딩부를 형성하는 단계를 포함하는 것을 특징으로 하는 양방향 LED 패키지 제조 방법.
(A) forming a first LED chip on one surface of the anode frame and the cathode frame facing one end;
(b) forming a second LED chip on the other surface of the anode frame and the cathode frame;
(c) electrically connecting the first and second LED chips with the anode frame and the cathode frame with wires; And
(d) forming a molding for embedding the first and second LEDs, the wires, and the wire connections of the frames.
제 3항에 있어서,
상기 LED 패키지 제조 방법은,
(e) 상기 몰딩부 외각을 매립하는 광투과부를 형성하는 단계를 더 포함하는 것을 특징으로 하는 양방향 LED 패키지 제조 방법.
The method of claim 3, wherein
The LED package manufacturing method,
(e) forming a light transmitting part filling the outer part of the molding part.
KR1020100029085A 2010-03-31 2010-03-31 Bidirectional light emitting diode package and manufacturing the same KR101646264B1 (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07244231A (en) * 1994-03-04 1995-09-19 Omron Corp Optical coupling device, semiconductor light-emitting element and relay
JP2002100812A (en) * 2000-09-21 2002-04-05 Rohm Co Ltd Side surface light-emitting two-chip semiconductor light- emitting device
KR100764039B1 (en) * 2006-06-30 2007-10-08 서울반도체 주식회사 Light emitting diode and the same thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07244231A (en) * 1994-03-04 1995-09-19 Omron Corp Optical coupling device, semiconductor light-emitting element and relay
JP2002100812A (en) * 2000-09-21 2002-04-05 Rohm Co Ltd Side surface light-emitting two-chip semiconductor light- emitting device
KR100764039B1 (en) * 2006-06-30 2007-10-08 서울반도체 주식회사 Light emitting diode and the same thereof

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