JPH0722692B2 - 水熱合成用容器 - Google Patents

水熱合成用容器

Info

Publication number
JPH0722692B2
JPH0722692B2 JP63194338A JP19433888A JPH0722692B2 JP H0722692 B2 JPH0722692 B2 JP H0722692B2 JP 63194338 A JP63194338 A JP 63194338A JP 19433888 A JP19433888 A JP 19433888A JP H0722692 B2 JPH0722692 B2 JP H0722692B2
Authority
JP
Japan
Prior art keywords
container
lid
buffer chamber
hydrothermal synthesis
cylindrical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63194338A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0243939A (ja
Inventor
康太郎 千葉
基秀 畑中
政征 河合
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Steel Works Ltd
Original Assignee
Japan Steel Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Steel Works Ltd filed Critical Japan Steel Works Ltd
Priority to JP63194338A priority Critical patent/JPH0722692B2/ja
Priority to CN90101411.7A priority patent/CN1022335C/zh
Priority to DE4003377A priority patent/DE4003377C1/de
Publication of JPH0243939A publication Critical patent/JPH0243939A/ja
Publication of JPH0722692B2 publication Critical patent/JPH0722692B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/02—Apparatus characterised by being constructed of material selected for its chemically-resistant properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/04—Pressure vessels, e.g. autoclaves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/04—Pressure vessels, e.g. autoclaves
    • B01J3/046—Pressure-balanced vessels
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/02—Apparatus characterised by their chemically-resistant properties
    • B01J2219/0204—Apparatus characterised by their chemically-resistant properties comprising coatings on the surfaces in direct contact with the reactive components
    • B01J2219/0236—Metal based

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP63194338A 1988-08-05 1988-08-05 水熱合成用容器 Expired - Lifetime JPH0722692B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP63194338A JPH0722692B2 (ja) 1988-08-05 1988-08-05 水熱合成用容器
CN90101411.7A CN1022335C (zh) 1988-08-05 1990-02-03 水热合成用容器
DE4003377A DE4003377C1 (enrdf_load_stackoverflow) 1988-08-05 1990-02-05

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63194338A JPH0722692B2 (ja) 1988-08-05 1988-08-05 水熱合成用容器
CN90101411.7A CN1022335C (zh) 1988-08-05 1990-02-03 水热合成用容器

Publications (2)

Publication Number Publication Date
JPH0243939A JPH0243939A (ja) 1990-02-14
JPH0722692B2 true JPH0722692B2 (ja) 1995-03-15

Family

ID=36754727

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63194338A Expired - Lifetime JPH0722692B2 (ja) 1988-08-05 1988-08-05 水熱合成用容器

Country Status (3)

Country Link
JP (1) JPH0722692B2 (enrdf_load_stackoverflow)
CN (1) CN1022335C (enrdf_load_stackoverflow)
DE (1) DE4003377C1 (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7057211B2 (en) 2001-10-26 2006-06-06 Ammono Sp. Zo.O Nitride semiconductor laser device and manufacturing method thereof
US7081162B2 (en) 2001-06-06 2006-07-25 Nichia Corporation Method of manufacturing bulk single crystal of gallium nitride
US7132730B2 (en) 2001-10-26 2006-11-07 Ammono Sp. Z.O.O. Bulk nitride mono-crystal including substrate for epitaxy
US7160388B2 (en) 2001-06-06 2007-01-09 Nichia Corporation Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
US7335262B2 (en) 2002-05-17 2008-02-26 Ammono Sp. Z O.O. Apparatus for obtaining a bulk single crystal using supercritical ammonia
US7589358B2 (en) 2002-05-17 2009-09-15 Ammono Sp. Z O.O. Phosphor single crystal substrate and method for preparing the same, and nitride semiconductor component using the same
US9127372B2 (en) 2005-01-12 2015-09-08 The Japan Steel Works, Ltd. Pressure vessel for growing single crystals

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4229468C2 (de) * 1992-09-03 1995-06-14 Streitenberg Hubert Dr Med Behälter für vom Bakterienbefall bedrohte flüssige oder pastöse Inhaltsstoffe
US5552039A (en) 1994-07-13 1996-09-03 Rpc Waste Management Services, Inc. Turbulent flow cold-wall reactor
JP3366820B2 (ja) * 1997-02-19 2003-01-14 株式会社日立製作所 酸化処理方法とその装置及び反応容器
SE518803C2 (sv) 1999-09-03 2002-11-26 Chematur Eng Ab Metod och reaktionssystem med högt tryck och hög temperatur som är lämpat för superkritisk vattenoxidation
US6398867B1 (en) * 1999-10-06 2002-06-04 General Electric Company Crystalline gallium nitride and method for forming crystalline gallium nitride
JP2003063889A (ja) * 2001-08-24 2003-03-05 Tokyo Denpa Co Ltd 単結晶育成用容器
CN1297695C (zh) * 2003-04-25 2007-01-31 郎丽红 人工石英晶体的高压釜
CN112442730A (zh) * 2019-08-29 2021-03-05 桂林百锐光电技术有限公司 一种温差水热法生长大尺寸体单晶的装置

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7081162B2 (en) 2001-06-06 2006-07-25 Nichia Corporation Method of manufacturing bulk single crystal of gallium nitride
US7160388B2 (en) 2001-06-06 2007-01-09 Nichia Corporation Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
US7252712B2 (en) 2001-06-06 2007-08-07 Ammono Sp. Z O.O. Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
US7374615B2 (en) 2001-06-06 2008-05-20 Ammono.Sp.Zo.O Method and equipment for manufacturing aluminum nitride bulk single crystal
US7422633B2 (en) 2001-06-06 2008-09-09 Ammono Sp. Zo. O. Method of forming gallium-containing nitride bulk single crystal on heterogeneous substrate
US7057211B2 (en) 2001-10-26 2006-06-06 Ammono Sp. Zo.O Nitride semiconductor laser device and manufacturing method thereof
US7132730B2 (en) 2001-10-26 2006-11-07 Ammono Sp. Z.O.O. Bulk nitride mono-crystal including substrate for epitaxy
US7420261B2 (en) 2001-10-26 2008-09-02 Ammono Sp. Z O.O. Bulk nitride mono-crystal including substrate for epitaxy
US7335262B2 (en) 2002-05-17 2008-02-26 Ammono Sp. Z O.O. Apparatus for obtaining a bulk single crystal using supercritical ammonia
US7589358B2 (en) 2002-05-17 2009-09-15 Ammono Sp. Z O.O. Phosphor single crystal substrate and method for preparing the same, and nitride semiconductor component using the same
US9127372B2 (en) 2005-01-12 2015-09-08 The Japan Steel Works, Ltd. Pressure vessel for growing single crystals
US9926642B2 (en) 2005-01-12 2018-03-27 Furuya Metal Co., Ltd. Method of manufacturing a pressure vessel for growing single crystals

Also Published As

Publication number Publication date
JPH0243939A (ja) 1990-02-14
CN1053819A (zh) 1991-08-14
CN1022335C (zh) 1993-10-06
DE4003377C1 (enrdf_load_stackoverflow) 1991-08-08

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