JPH07225398A - Liquid crystal display device - Google Patents
Liquid crystal display deviceInfo
- Publication number
- JPH07225398A JPH07225398A JP1806394A JP1806394A JPH07225398A JP H07225398 A JPH07225398 A JP H07225398A JP 1806394 A JP1806394 A JP 1806394A JP 1806394 A JP1806394 A JP 1806394A JP H07225398 A JPH07225398 A JP H07225398A
- Authority
- JP
- Japan
- Prior art keywords
- scanning signal
- signal electrode
- connection terminal
- transparent conductive
- liquid crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は液晶表示装置、特に、外
部回路との接続端子部の構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly to a structure of a connection terminal portion for connecting to an external circuit.
【０００２】[0002]
【従来の技術】ガラスなどの絶縁基板上に薄膜トランジ
スタをマトリクス状に形成し、これらをスイッチング素
子として用いるアクティブマトリクス方式の液晶表示装
置は、高画質のフラットパネルディスプレイとして期待
が大きい。2. Description of the Related Art An active matrix type liquid crystal display device in which thin film transistors are formed in a matrix on an insulating substrate such as glass and used as switching elements is expected to be a flat panel display with high image quality.
【０００３】液晶表示装置と外部回路を接続する場合、
テープキャリアパッケージ(ＴＣＰ)を用いることにより
接続しているが、走査信号電極，映像信号電極に直接Ｔ
ＣＰで接続すると電食等信頼性に問題がある。この問題
を解決する方法としては、特開昭62−299819号公報があ
る。When connecting a liquid crystal display device and an external circuit,
Although it is connected by using a tape carrier package (TCP), the T signal is directly connected to the scanning signal electrode and the video signal electrode
When connecting with CP, there is a problem in reliability such as electrolytic corrosion. As a method for solving this problem, there is JP-A-62-299819.
【０００４】[0004]
【発明が解決しようとする課題】上記の方法を用いた場
合、各電極とＩＴＯとのコンタクト抵抗が問題となる
が、特に走査信号電極にアルミニウム（Ａｌ）などの酸
素を取り込みやすい材料を用いると、ＩＴＯとの接触時
にＩＴＯから酸素を引き抜いてコンタクト部の所々にＡ
ｌ酸化物を形成しコンタクト抵抗がばらつき、結果とし
て接続端子部の抵抗値がばらついて液晶表示装置駆動時
に横線状の表示不良が発生する。When the above method is used, the contact resistance between each electrode and the ITO becomes a problem, but particularly when a material such as aluminum (Al) which easily takes in oxygen is used for the scanning signal electrode. , At the time of contact with ITO, oxygen is extracted from the ITO and A
1 oxide is formed, the contact resistance is varied, and as a result, the resistance value of the connection terminal portion is varied, and a horizontal linear display defect occurs when the liquid crystal display device is driven.
【０００５】このように従来技術では走査信号電極に接
続端子となる透明導電膜を直接接続して端子部を形成し
たので、走査信号電極と透明導電膜とのコンタクト抵抗
がばらつき、液晶表示装置に表示不良を発生させるとい
う問題が有った。As described above, according to the prior art, since the transparent conductive film serving as the connection terminal is directly connected to the scanning signal electrode to form the terminal portion, the contact resistance between the scanning signal electrode and the transparent conductive film varies, and the liquid crystal display device is provided. There was a problem of causing display failure.
【０００６】本発明の目的は、この問題点を解決する技
術を提供することにある。An object of the present invention is to provide a technique for solving this problem.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するため
に、本発明では以下の手段を用いることとする。In order to achieve the above object, the present invention uses the following means.
【０００８】［手段１］基板上に複数本の走査信号電極
と，複数本の映像信号電極と，複数個の薄膜トランジス
タを有し、前記走査信号電極と外部回路とを接続する部
分が透明導電膜からなる接続端子部を有する液晶表示装
置において、前記走査信号電極及び前記透明導電膜が直
接接触しない構造を持ち、異種金属を用いて前記走査信
号電極及び前記透明導電膜を接続する。[Means 1] A transparent conductive film having a plurality of scanning signal electrodes, a plurality of video signal electrodes, and a plurality of thin film transistors on a substrate, and a portion connecting the scanning signal electrodes and an external circuit. In the liquid crystal display device having a connection terminal portion made of, the scanning signal electrode and the transparent conductive film have a structure in which they do not directly contact each other, and the scanning signal electrode and the transparent conductive film are connected using a different metal.
【０００９】［手段２］基板上に複数本の走査信号電極
と，複数本の映像信号電極と，複数個の薄膜トランジス
タを有し、前記走査信号電極と外部回路とを接続する部
分が透明導電膜からなる接続端子部を有する液晶表示装
置において、前記走査信号電極及び前記透明導電膜が直
接接触しない構造を持ち、前記映像信号電極を用いて前
記走査信号電極及び前記透明導電膜を接続する。[Means 2] A plurality of scanning signal electrodes, a plurality of video signal electrodes, and a plurality of thin film transistors are provided on a substrate, and a portion connecting the scanning signal electrodes and an external circuit is a transparent conductive film. In the liquid crystal display device having a connection terminal portion made of, the scanning signal electrode and the transparent conductive film have a structure in which they do not directly contact each other, and the scanning signal electrode and the transparent conductive film are connected using the video signal electrode.
【００１０】［手段３］基板上に複数本の走査信号電極
と，複数本の映像信号電極と，複数個の薄膜トランジス
タを有する液晶表示装置において、前記映像信号電極及
び前記走査信号電極と外部回路とを接続する接続端子部
が透明導電膜より構成され、前記走査信号電極と前記接
続端子部を高融点金属で接続する。[Means 3] In a liquid crystal display device having a plurality of scanning signal electrodes, a plurality of video signal electrodes, and a plurality of thin film transistors on a substrate, the video signal electrodes, the scanning signal electrodes, and an external circuit. A connection terminal portion for connecting the scanning signal electrode and the connection terminal portion is connected by a high melting point metal.
【００１１】［手段４］上記手段１，２または３におい
て、前記走査信号電極はＡｌまたはＡｌ合金からなり、
前記透明導電膜はインジウム−スズ酸化物からなること
とした。[Means 4] In the above means 1, 2, or 3, the scanning signal electrode is made of Al or Al alloy,
The transparent conductive film is made of indium-tin oxide.
【００１２】［手段５］上記手段１または２において、
前記走査信号電極と前記透明導電膜を絶縁膜により分離
することとした。[Means 5] In the above means 1 or 2,
The scanning signal electrode and the transparent conductive film are separated by an insulating film.
【００１３】［手段６］上記手段５において、前記絶縁
膜は前記走査信号電極の陽極酸化膜からなることとし
た。[Means 6] In the above means 5, the insulating film is made of an anodic oxide film of the scanning signal electrode.
【００１４】［手段７］上記手段１または２において、
前記走査信号電極と前記透明導電膜が同一平面上で別々
に形成することとした。[Means 7] In the above means 1 or 2,
The scanning signal electrode and the transparent conductive film are separately formed on the same plane.
【００１５】［手段８］上記手段１または２において、
前記走査信号電極及び前記走査信号電極と外部回路とを
接続する接続端子部を接続する金属にＺｒ，Ｃｒ，Ｍ
ｏ，Ｔｉ，Ｔａ，Ｖ，Ｎｂ，Ｗ，Ｈｆのうち少なくとも
一つを用いることとした。[Means 8] In the above means 1 or 2,
Zr, Cr, M is added to the metal connecting the scanning signal electrode and the connection terminal portion connecting the scanning signal electrode and an external circuit.
At least one of o, Ti, Ta, V, Nb, W, and Hf is used.
【００１６】[0016]
【作用】本発明では、接続端子となる透明導電膜と走査
信号電極が直接接触しない構造を持つ。このため、透明
導電膜と走査信号電極との間での原子のやり取りがな
く、透明導電膜と走査信号電極の界面での不必要な結合
が生じなくなり、コンタクト抵抗のばらつきがなくな
る。つまり、端子部全体としてみたときの抵抗ばらつき
が抑えられ、表示不良発生が抑制できる。In the present invention, the transparent conductive film serving as the connection terminal does not directly contact the scanning signal electrode. Therefore, there is no exchange of atoms between the transparent conductive film and the scanning signal electrode, unnecessary bonding does not occur at the interface between the transparent conductive film and the scanning signal electrode, and the contact resistance does not vary. That is, variations in resistance when viewed as the entire terminal portion can be suppressed, and occurrence of display defects can be suppressed.
【００１７】[0017]
【実施例】以下、本発明の実施例を説明する。EXAMPLES Examples of the present invention will be described below.
【００１８】図１は本発明の第１の実施例を示す平面図
である。１１はＡｌまたはＡｌ合金からなる走査信号電
極、１２は映像信号電極、１３はソース電極、１４は半
導体層、１５はインジウム−スズ酸化物からなる画素電
極、１６はインジウム−スズ酸化物からなる接続端子、
１７は走査信号電極１と電気的接続をとるための接続配
線である。FIG. 1 is a plan view showing a first embodiment of the present invention. Reference numeral 11 is a scanning signal electrode made of Al or Al alloy, 12 is a video signal electrode, 13 is a source electrode, 14 is a semiconductor layer, 15 is a pixel electrode made of indium-tin oxide, and 16 is a connection made of indium-tin oxide. Terminal,
Reference numeral 17 is a connection wiring for electrically connecting to the scanning signal electrode 1.
【００１９】また、図２は図１中のＡ−Ａ′で示す方向
における断面図である。１８は走査信号電極１１を陽極
酸化した部分、１９は保護膜である。本実施例では、走
査信号電極１１と接続端子１６とが電気的に絶縁されて
いるところに特徴がある。こうすることで走査信号電極
１１と接続端子１６の接触による界面での走査信号電極
１１の酸化物生成がなく、接続端子部のコンタクト抵抗
のばらつきがなくなり、液晶表示装置の横線不良発生が
著しく抑えられ、製造コスト低減が望める。FIG. 2 is a sectional view taken along the line AA 'in FIG. Reference numeral 18 is a portion where the scanning signal electrode 11 is anodized, and 19 is a protective film. The present embodiment is characterized in that the scanning signal electrode 11 and the connection terminal 16 are electrically insulated. By doing so, the oxide of the scanning signal electrode 11 is not generated at the interface due to the contact between the scanning signal electrode 11 and the connection terminal 16, the contact resistance of the connection terminal portion does not vary, and the occurrence of horizontal line defects in the liquid crystal display device is significantly suppressed. Therefore, the manufacturing cost can be reduced.
【００２０】次に、図３および図４を用いて液晶表示装
置端子部及びこれを用いた液晶表示装置の製造方法を説
明する。Next, a liquid crystal display device terminal portion and a method of manufacturing a liquid crystal display device using the same will be described with reference to FIGS.
【００２１】ガラスなどの絶縁性基板２０上に、例え
ば、スパッタリング法によりＡｌまたはＡｌ合金を２８
０ｎｍ堆積する。次にホト工程により走査信号電極１１
及び陽極酸化のための給電線を形成する（図３(ａ)）。
走査信号電極及び給電線の幅は８０〜１００μｍが望ま
しい。次にホト工程またはノズル等で直接描画すること
により走査信号電極１１の一部をホトレジストで覆う。
本実施例では、接続端子部で走査信号電極１１上の中央
部分のみを陽極酸化するためにパターンの両端５〜１０
μｍをホトレジストで覆った。この状態で陽極酸化液に
浸し、外部より基板内に形成した給電線を介して直流電
圧を印加し陽極酸化することにより陽極酸化膜１８を１
８０ｎｍ形成する。陽極酸化液は、３％酒石酸をエチレ
ングリコールまたはプロピレングリコール液で希釈し、
アンモニアでｐＨ７.０±０.５に調整した液を用いる
（図３(ｂ)）。次にスパッタリング法によりインジウム
−スズ酸化物（ＩＴＯ）を２８０ｎｍ堆積する。次にホ
ト工程により接続端子１６を形成する（図３(ｃ)）。な
お、この時同時に画素電極１５も形成する。On the insulating substrate 20 such as glass, for example, Al or Al alloy 28 is formed by the sputtering method.
Deposit 0 nm. Next, the scanning signal electrode 11 is formed by a photo process.
And a power supply line for anodic oxidation is formed (FIG. 3A).
The width of the scanning signal electrode and the power supply line is preferably 80 to 100 μm. Next, a part of the scanning signal electrode 11 is covered with a photoresist by directly drawing with a photo process or a nozzle.
In this embodiment, both ends of the pattern are 5 to 10 in order to anodize only the central portion on the scanning signal electrode 11 at the connection terminal portion.
The μm was covered with photoresist. In this state, the anodizing film 18 is dipped in an anodizing solution, and a DC voltage is applied from the outside through a power supply line formed in the substrate to anodize the anodizing film 18
80 nm is formed. Anodizing solution is 3% tartaric acid diluted with ethylene glycol or propylene glycol solution,
A liquid adjusted to pH 7.0 ± 0.5 with ammonia is used (FIG. 3 (b)). Next, 280 nm of indium-tin oxide (ITO) is deposited by the sputtering method. Next, the connection terminal 16 is formed by a photo process (FIG. 3C). At this time, the pixel electrode 15 is also formed at the same time.
【００２２】この後、窒化シリコン（ＳｉＮ）膜を２０
０ｎｍ，非晶質シリコン(ａ−Ｓｉ)膜を２００ｎｍ、リ
ンをドープしたｎ型ａ−Ｓｉ膜を５０ｎｍプラズマＣＶ
Ｄ法により順次積層、その後ホト工程によりそれぞれ形
成する。これらの膜は、薄膜トランジスタ部に用いられ
る。After this, a silicon nitride (SiN) film is formed on
0 nm, amorphous silicon (a-Si) film 200 nm, phosphorus-doped n-type a-Si film 50 nm plasma CV
The layers are sequentially laminated by the D method and then formed by the photo process. These films are used in the thin film transistor section.
【００２３】次に、スパッタリング法によりＣｒ，Ａｌ
をそれぞれ６０ｎｍ，４００ｎｍ順次積層し、ホト工程
により映像信号電極１２，ソース電極１３，接続配線１
７を形成する（図４(ａ)）。最後に、保護膜１９として
ＳｉＮ膜をプラズマＣＶＤ法などにより１μｍ堆積し、
外部回路と接続する部分のＳｉＮ膜を除去して薄膜トラ
ンジスタ及び接続端子部は完成する（図４(ｂ)）。Next, by sputtering, Cr, Al
60 nm and 400 nm respectively are sequentially laminated, and the video signal electrode 12, the source electrode 13 and the connection wiring 1 are formed by a photo process.
7 is formed (FIG. 4A). Finally, a SiN film as the protective film 19 is deposited to a thickness of 1 μm by plasma CVD or the like,
The SiN film in the portion connected to the external circuit is removed to complete the thin film transistor and the connection terminal portion (FIG. 4B).
【００２４】これらの後、配向膜塗布，ラビング，液晶
封入等の工程を経て液晶表示装置は完成するが、本発明
の骨子には関係しないので省略する。After that, the liquid crystal display device is completed through the steps of coating the alignment film, rubbing, encapsulating the liquid crystal, etc., but since it is not related to the essence of the present invention, it is omitted.
【００２５】本実施例では、走査信号電極１１の中央部
分のみを陽極酸化したが、図４に示すように走査信号電
極１１のパターン片側を残して陽極酸化膜１８が形成さ
れていてもよい。このように構成すれば、接続端子１６
の面積を大きく取ることが可能となり、ＴＣＰと接続す
る際の接触抵抗をより低減できる。In the present embodiment, only the central portion of the scanning signal electrode 11 was anodized, but as shown in FIG. 4, the anodic oxide film 18 may be formed except for one side of the pattern of the scanning signal electrode 11. With this structure, the connection terminal 16
It is possible to take a large area and to further reduce the contact resistance when connecting with TCP.
【００２６】本実施例では、走査信号電極にＡｌもしく
はＡｌ合金を用いたが、酸素を膜内に取り込みやすい金
属、例えばＴａ，Ｔｉ，Ｚｒ，Ｎｂもしくはこれらを母
材とする合金でもよい。これらの金属は、陽極酸化が可
能であり、さらに高融点金属特有の耐薬品性に優れてい
るために電極の信頼性が向上する。In the present embodiment, Al or Al alloy is used for the scanning signal electrode, but a metal that easily takes oxygen into the film, for example, Ta, Ti, Zr, Nb or an alloy having these as a base material may be used. Since these metals can be anodized and have excellent chemical resistance peculiar to refractory metals, the reliability of electrodes is improved.
【００２７】本実施例では、走査信号電極の陽極酸化膜
で接続端子と電気的に絶縁させたが、陽極酸化膜のかわ
りにＳｉＮ膜や二酸化シリコン(ＳｉＯ2）膜でもよいこ
とはいうまでもない。ＳｉＮ膜やＳｉＯ2 膜で実施した
場合、走査信号電極の膜厚を陽極酸化によって減らすこ
とがないので、走査信号電極の抵抗値を変えることなく
液晶表示装置が構成できる。Although the anodic oxide film of the scanning signal electrode is electrically insulated from the connection terminal in this embodiment, it goes without saying that a SiN film or a silicon dioxide (SiO 2 ) film may be used instead of the anodic oxide film. Absent. When the SiN film or the SiO 2 film is used, the film thickness of the scanning signal electrode is not reduced by anodic oxidation, so that the liquid crystal display device can be configured without changing the resistance value of the scanning signal electrode.
【００２８】図５は本発明の第３の実施例を示す平面
図、また図６は図５中のＢ−Ｂ′で示す方向における断
面図である。走査信号電極１１と接続端子１６は基板上
で異種平面上にあり、これらは接続配線１７を通じて電
気的に接続されている。このように構成することによ
り、走査信号電極１１及び接続端子１６と接続配線１７
とのコンタクト面積を大きく取ることができ、接続端子
部全体としての抵抗を下げることができるので、外部回
路より入力された信号波形を変えることなく表示装置へ
伝達でき、画質が向上する。また、この場合走査信号電
極を陽極酸化するときの給電線は、接続端子部と反対側
に形成する。FIG. 5 is a plan view showing a third embodiment of the present invention, and FIG. 6 is a sectional view taken along the line BB 'in FIG. The scanning signal electrode 11 and the connection terminal 16 are on different planes on the substrate, and they are electrically connected through the connection wiring 17. With this configuration, the scanning signal electrode 11, the connection terminal 16 and the connection wiring 17 are provided.
Since a large contact area can be secured and the resistance of the entire connection terminal portion can be reduced, the signal waveform input from the external circuit can be transmitted to the display device without changing, and the image quality is improved. Further, in this case, the power supply line for anodizing the scanning signal electrode is formed on the side opposite to the connection terminal portion.
【００２９】図７は本発明の第４の実施例を示す断面図
である。本実施例では、走査信号電極１１と接続端子１
６との間に高融点金属２１を挿入し、映像信号電極１２
と接続端子１６を透明導電膜で構成した点に特徴があ
る。このように構成すると、走査信号電極１１と接続端
子１６の間での原子の相互拡散が抑えられるばかりでな
く、映像信号電極１２及び画素電極１５及び接続端子１
６が透明導電膜で構成されるので液晶表示装置の低コス
ト化が可能となる。FIG. 7 is a sectional view showing a fourth embodiment of the present invention. In this embodiment, the scanning signal electrode 11 and the connection terminal 1
The refractory metal 21 is inserted between 6 and the video signal electrode 12
And the connection terminal 16 is made of a transparent conductive film. With this configuration, not only the mutual diffusion of atoms between the scanning signal electrode 11 and the connection terminal 16 is suppressed, but also the video signal electrode 12, the pixel electrode 15, and the connection terminal 1 are formed.
Since 6 is composed of a transparent conductive film, the cost of the liquid crystal display device can be reduced.
【００３０】次に、図９および図１０を用いて本実施例
の製造方法について説明する。Next, the manufacturing method of this embodiment will be described with reference to FIGS.
【００３１】第１の実施例と同様に、ガラスなどの絶縁
性基板２０上にスパッタリング法によりＡｌまたはＡｌ
合金を２８０ｎｍ堆積し、ホト工程により走査信号電極
１１及び陽極酸化のための給電線を形成し、ホト工程ま
たはノズル等で直接描画することにより走査信号電極１
１の一部をホトレジストで覆い、陽極酸化する（図９
(ａ)）。次に窒化シリコン（ＳｉＮ）膜２２を２００ｎ
ｍ，非晶質シリコン（ａ−Ｓｉ）膜１４を２００ｎｍ、
リンをドープしたｎ型ａ−Ｓｉ膜２３を５０ｎｍプラズ
マＣＶＤ法により順次積層、その後、ホト工程により半
導体層，ゲート絶縁膜をそれぞれ形成する（図９
(ｂ)）。次に、スパッタリング法などによりＣｒ等の高
融点金属を６０ｎｍ堆積し、ホト工程により所定の場所
へ形成する。この時、接続端子部にもＣｒを形成する
（図１０(ａ)）。次に、スパッタリング法などによりイ
ンジウム−スズ酸化物を堆積し、映像信号電極１２，画
素電極１５，接続端子１６を形成する。次に、これらを
マスクとしてｎ型ａ−Ｓｉ層をドライエッチング法など
によりエッチングする（図１０(ｂ)）。次に、保護膜１
９として、プラズマＣＶＤ法などによりＳｉＮ膜を１μ
ｍ堆積し、ホト工程により所定の場所に形成する。この
後の製造工程は第１の実施例と同様である。Similar to the first embodiment, Al or Al is formed on the insulating substrate 20 such as glass by the sputtering method.
The scanning signal electrode 1 is formed by depositing an alloy of 280 nm, forming a scanning signal electrode 11 and a power supply line for anodization by a photo process, and drawing directly with a photo process or a nozzle.
1 is covered with photoresist and anodized (FIG. 9).
(a)). Next, a silicon nitride (SiN) film 22 is formed to a thickness of 200 n.
m, the amorphous silicon (a-Si) film 14 is 200 nm,
An n-type a-Si film 23 doped with phosphorus is sequentially stacked by a 50 nm plasma CVD method, and then a semiconductor layer and a gate insulating film are formed by a photo process (FIG. 9).
(b)). Next, a refractory metal such as Cr is deposited to a thickness of 60 nm by a sputtering method or the like, and is formed at a predetermined place by a photo process. At this time, Cr is also formed on the connection terminal portion (FIG. 10A). Next, indium-tin oxide is deposited by a sputtering method or the like to form the video signal electrode 12, the pixel electrode 15, and the connection terminal 16. Next, the n-type a-Si layer is etched by using these as a mask by a dry etching method or the like (FIG. 10B). Next, the protective film 1
9, the SiN film 1 μm by plasma CVD method, etc.
m, and formed at a predetermined place by a photo process. The subsequent manufacturing process is similar to that of the first embodiment.
【００３２】本実施例では走査信号電極１１と接続端子
１６との間にＣｒを用いたが、Ｔｉ，Ｔａ，Ｎｂ，Ｖ，
Ｍｏ，Ｚｒ，Ｗ，Ｈｆを用いても効果は同様である。ま
た、薄膜の製造方法は、スパッタリングのほかに電子ビ
ーム蒸着法や抵抗加熱蒸着法等、基板上に均一な薄膜を
形成できる方法であればよい。In this embodiment, Cr is used between the scanning signal electrode 11 and the connection terminal 16, but Ti, Ta, Nb, V,
The same effect is obtained by using Mo, Zr, W, and Hf. Further, the method for producing the thin film may be any method that can form a uniform thin film on the substrate, such as an electron beam evaporation method and a resistance heating evaporation method in addition to sputtering.
【００３３】[0033]
【発明の効果】本発明によれば接続端子となる透明導電
膜と走査信号電極のコンタクト抵抗のばらつきをなくせ
るので、端子部の抵抗ばらつきが抑えられ、表示不良発
生が抑制できる。According to the present invention, it is possible to eliminate the variation in the contact resistance between the transparent conductive film serving as the connection terminal and the scanning signal electrode, so that the variation in the resistance of the terminal portion can be suppressed and the occurrence of display defects can be suppressed.
【図１】本発明の第１の実施例を示す平面図。FIG. 1 is a plan view showing a first embodiment of the present invention.
【図２】本発明の第１の実施例における接続端子部の断
面図。FIG. 2 is a sectional view of a connection terminal portion according to the first embodiment of the present invention.
【図３】本発明の第１の実施例における接続端子部の製
造工程を示す断面図。FIG. 3 is a cross-sectional view showing the manufacturing process of the connection terminal portion according to the first embodiment of the present invention.
【図４】本発明の第１の実施例における接続端子部の製
造工程を示す断面図。FIG. 4 is a cross-sectional view showing the manufacturing process of the connection terminal portion according to the first embodiment of the present invention.
【図５】本発明の第２の実施例を示す断面図。FIG. 5 is a sectional view showing a second embodiment of the present invention.
【図６】本発明の第３の実施例を示す平面図。FIG. 6 is a plan view showing a third embodiment of the present invention.
【図７】本発明の第３の実施例における接続端子部の断
面図。FIG. 7 is a sectional view of a connection terminal portion in a third embodiment of the present invention.
【図８】本発明の第４の実施例における接続端子部の断
面図。FIG. 8 is a sectional view of a connection terminal portion according to a fourth embodiment of the present invention.
【図９】本発明の第４の実施例における接続端子部の製
造工程を示す断面図。FIG. 9 is a cross-sectional view showing the manufacturing process of the connection terminal portion according to the fourth embodiment of the present invention.
【図１０】本発明の第４の実施例における接続端子部の
製造工程を示す断面図。FIG. 10 is a cross-sectional view showing the manufacturing process of the connection terminal portion according to the fourth embodiment of the present invention.
１１…走査信号電極、１６…接続端子、１７…接続配
線、１８…陽極酸化膜、１９…保護膜、２０…ガラス基
板。11 ... Scan signal electrode, 16 ... Connection terminal, 17 ... Connection wiring, 18 ... Anodized film, 19 ... Protective film, 20 ... Glass substrate.
Claims (8)
の映像信号電極と，複数個の薄膜トランジスタを有し、
前記走査信号電極と外部回路とを接続する部分が透明導
電膜からなる接続端子部を有する液晶表示装置におい
て、前記走査信号電極及び前記透明導電膜が直接接触し
ない構造を持ち、異種金属を用いて前記走査信号電極及
び前記透明導電膜を接続することにより構成した接続端
子部を有することを特徴とする液晶表示装置。1. A substrate having a plurality of scanning signal electrodes, a plurality of video signal electrodes, and a plurality of thin film transistors,
In a liquid crystal display device having a connection terminal part formed of a transparent conductive film in a portion connecting the scanning signal electrode and an external circuit, a structure in which the scanning signal electrode and the transparent conductive film do not come into direct contact is used, and a different metal is used. A liquid crystal display device comprising a connection terminal portion formed by connecting the scanning signal electrode and the transparent conductive film.
の映像信号電極と，複数個の薄膜トランジスタを有し、
前記走査信号電極と外部回路とを接続する部分が透明導
電膜からなる接続端子部を有する液晶表示装置におい
て、前記走査信号電極及び前記透明導電膜が直接接触し
ない構造を持ち、前記映像信号電極を用いて前記走査信
号電極及び前記透明導電膜を接続することにより構成し
た接続端子部を有することを特徴とする液晶表示装置。2. A substrate having a plurality of scanning signal electrodes, a plurality of video signal electrodes, and a plurality of thin film transistors,
In a liquid crystal display device having a connection terminal portion made of a transparent conductive film in a portion connecting the scanning signal electrode and an external circuit, the scanning signal electrode and the transparent conductive film have a structure in which they do not directly contact each other, and the video signal electrode is A liquid crystal display device comprising a connection terminal portion formed by connecting the scanning signal electrode and the transparent conductive film using the liquid crystal display device.
の映像信号電極と，複数個の薄膜トランジスタを有する
液晶表示装置において、前記映像信号電極及び前記走査
信号電極と外部回路とを接続する接続端子部が透明導電
膜より構成され、前記走査信号電極と前記接続端子部を
高融点金属で接続することにより構成した接続端子部を
有することを特徴とする液晶表示装置。3. A liquid crystal display device having a plurality of scanning signal electrodes, a plurality of video signal electrodes, and a plurality of thin film transistors on a substrate, wherein the video signal electrodes and the scanning signal electrodes are connected to an external circuit. The liquid crystal display device is characterized in that the connection terminal portion is formed of a transparent conductive film and has a connection terminal portion formed by connecting the scanning signal electrode and the connection terminal portion with a refractory metal.
信号電極はＡｌ，Ｔｉ，Ｔａ，Ｚｒ，Ｎｂまたはこれら
を母材とする合金からなり、前記透明導電膜はインジウ
ム−スズ酸化物からなる接続端子部を有する液晶表示装
置。4. The scanning signal electrode according to claim 1, wherein the scanning signal electrode is made of Al, Ti, Ta, Zr, Nb or an alloy having these as a base material, and the transparent conductive film is made of indium-tin oxide. Liquid crystal display device having a connection terminal part that is
電極と前記透明導電膜が絶縁膜により分離された接続端
子部を有する液晶表示装置。5. The liquid crystal display device according to claim 1, further comprising a connection terminal portion in which the scanning signal electrode and the transparent conductive film are separated by an insulating film.
信号電極の陽極酸化膜からなる液晶表示装置。6. The liquid crystal display device according to claim 5, wherein the insulating film is an anodic oxide film of the scanning signal electrode.
電極と前記透明導電膜が同一平面上で別々に形成された
構造を持つ接続端子部を有する液晶表示装置。7. The liquid crystal display device according to claim 1, further comprising a connection terminal portion having a structure in which the scanning signal electrode and the transparent conductive film are separately formed on the same plane.
信号電極及び前記走査信号電極と外部回路とを接続する
接続端子部を接続する金属にＺｒ，Ｃｒ，Ｍｏ，Ｔｉ，
Ｔａ，Ｖ，Ｎｂ，Ｗ，Ｈｆのうち少なくとも一つを用い
た接続端子部を有する液晶表示装置。8. The metal for connecting the scanning signal electrode and the connection terminal portion for connecting the scanning signal electrode and an external circuit to the metal for connecting Zr, Cr, Mo, Ti,
A liquid crystal display device having a connection terminal portion using at least one of Ta, V, Nb, W, and Hf.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1806394A JPH07225398A (en) | 1994-02-15 | 1994-02-15 | Liquid crystal display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1806394A JPH07225398A (en) | 1994-02-15 | 1994-02-15 | Liquid crystal display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07225398A true JPH07225398A (en) | 1995-08-22 |
Family
ID=11961233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1806394A Pending JPH07225398A (en) | 1994-02-15 | 1994-02-15 | Liquid crystal display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07225398A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009142089A1 (en) * | 2008-05-20 | 2009-11-26 | シャープ株式会社 | Substrate for display panel, display panel provided with the substrate, method for manufacturing substrate for display panel, and method for manufacturing display panel |
-
1994
- 1994-02-15 JP JP1806394A patent/JPH07225398A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009142089A1 (en) * | 2008-05-20 | 2009-11-26 | シャープ株式会社 | Substrate for display panel, display panel provided with the substrate, method for manufacturing substrate for display panel, and method for manufacturing display panel |
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