JPH07224378A - Sputtering device - Google Patents

Abstract

PURPOSE:To improve the quality of a film by reducing the sputtering out of the substance forming impurities. CONSTITUTION:A high-speed ion beam is made incident on a target 5 from an ion source 4 in a vacuum chamber 3 in a sputtering device 1, and the particle sputtered out from the target 5 is deposited on a substrate 7 to form a film. In this case, the inner wall of the chamber 3, a target holder 6 or a substrate holder 8 is coated with a material (e.g. carbon) having a lower sputtering rate than the conventional stainless steel or with the same material as the target. The parts to be coated are lined with a plate material or coated with the molten material. The target holder 6 and the substrate holder 8 can be made of the material.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus, and more particularly to reduction of spatter out of substances that become impurities.

[0002]

2. Description of the Related Art As shown in FIG. 3, a sputtering apparatus 1 has an ion source 4 installed in a chamber 3 which can be decompressed by a vacuum exhaust system 2, and a target (a film is formed in front of the ion source 4 at a predetermined interval). The material to be tried) 5
Are held by the target holder 6 so as to be oblique to the center line of the ion beam. Facing the target 5,
The substrate 7 is held by the substrate holder 8 at a predetermined interval.

A high-speed ion beam is made incident on the target 5 from the ion source 4 under a reduced pressure close to a vacuum, whereby the material particles of the target are knocked out from the surface of the target 5 (referred to as spatter-out), and the opposing substrate 7
A thin film is formed by depositing on the surface of. Tungsten, nickel, etc. are often used as the material of the target 5.

[0004]

In the sputtering apparatus, the high-speed particles generated by the ion source 4 and incident on the target 5 are reflected or scattered on the target surface without being sputtered out of the target material. The inner wall of the chamber 3 and the target holder 6 or the substrate holder 8 (these are generally made of stainless steel) are tapped with the spread of the ion beam itself without sufficiently losing the kinetic energy of, and the surfaces thereof are sputtered out. There is a problem that particles are mixed during film formation and become impurities in the manufactured thin film, which deteriorates the film quality.

It is an object of the present invention to solve the problems of the prior art, to reduce the spatter out of substances which become impurities, and to improve the film quality.

[0006]

[Means for Solving the Problems]

(1) The invention of claim 1 is a holder for holding an inner wall of a chamber or a target in a sputtering apparatus in which high-speed particles are incident on a target in a vacuum chamber and particles sputtered out from the target are formed on a substrate. Alternatively, the holder for holding the substrate is covered with a material having a sputtering rate smaller than that of stainless steel.

(2) In the invention of claim 2, the inner wall of the chamber, the holder for holding the target, or the holder for holding the substrate is covered with the same material as that of the target. (3) In the invention of claim 3, at least one of the inner wall of the chamber, the holder for holding the target, and the holder for holding the substrate is made of the same material as the target, and at least one of the other has a sputtering rate smaller than that of stainless steel. Each is covered with a material.

(4) In the invention of claim 4, carbon is selected as a material having a sputtering rate smaller than that of the stainless steel in the sputtering apparatus according to the above (1) or (3).

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention is shown in FIG. 1 by attaching the same reference numerals to parts corresponding to those in FIG. In this invention, in order to prevent the spattering out of impurities from substances other than the target 5, (1) the inner wall of the chamber 3 or (2) the target holder 6 or (3) the substrate holder 8 is made of a conventional stainless steel (SUS). Is also covered with a material having a low sputtering rate (referred to as a low sputtering material) (claim 1). In the example of FIG. 1, the inner wall of the chamber 3 is covered with an interior material 9 made of a low sputtering material. To cover each part with a low sputtering material, a plate-shaped low sputtering material may be stretched on the surface of each part,
The material may be dissolved in a solvent or heat-melted to coat it. In the case of the target holder 6 and the substrate holder 8, the target holder 6 and the substrate holder 8 themselves can be made of a low sputtering material.

The sputtering rate S is given by S = Ns / Ni, where Ns is the number of atoms sputtered from the target material and Ni is the number of high-speed particles incident on the target material. FIG. 2 shows the sputtering rates of various materials. In order to reduce the spattering out of substances that become impurities during film formation, (1) the inner wall of the chamber 3, or (2) the target holder 6, or (3) the substrate holder 8
A method of covering the target 5 with the same material as the target 5 is also conceivable (claim 2). Even if spattering occurs from the members (1) to (3), if the particles are the same substance as the target 5, they will not become impurities even if they are mixed in during film formation.

In some cases, the above (1), (2),
At least one of the members of (3) may be covered with the same material as the target 5, and at least one of them may be covered with a low sputtering material (claim 3). As is clear from FIG. 2, since carbon (C) is excellent as a material having a low sputtering rate, it is desirable to use carbon (C).

Ion beam sputtering is shown as an example of the sputtering apparatus.
Apparatuses using methods called polar sputtering, binary sputtering, and high-frequency sputtering are also in practical use, and the present invention can be widely applied to these various sputtering apparatuses.

[0013]

【The invention's effect】

When (1) the inner wall of the chamber, or (2) the target holder 6, or (3) the substrate holder 8 is covered with a material having a sputtering rate smaller than that of conventional stainless steel,
It is possible to reduce spatter-out of substances that become impurities from the surface of these members, and to improve the film quality.

When the above (1), (2) or (3) is covered with the same material as the target 5, even if spatter out occurs from these members, the same substance as the particles sputtered out from the target 5 is used. Since these particles are used, the quality of the film can be improved without any problems. Further, since the low sputtering material and the same material as the target can be used in combination for the members (1) to (3), it is possible to have flexibility in selecting the material of each part in manufacturing the sputtering device.

[Brief description of drawings]

FIG. 1 is a principle vertical sectional view showing an embodiment of the present invention.

FIG. 2 A having energy of 500 eV for various substances
The figure showing the sputtering rate at the time of making r ion inject.

FIG. 3 is a principle vertical sectional view of a conventional sputtering apparatus.

Claims (4)

[Claims] 1. A sputtering apparatus in which high-speed particles are incident on a target in a vacuum chamber, and particles sputtered out from the target are deposited on a substrate.
A sputtering apparatus, wherein an inner wall of the chamber, a holder for holding the target, or a holder for holding the substrate is covered with a material having a sputtering rate smaller than that of stainless steel. 2. A sputtering apparatus in which high-speed particles are made incident on a target in a vacuum chamber, and particles sputtered out from the target are deposited on a substrate.
The sputtering apparatus, wherein an inner wall of the chamber, a holder for holding the target, or a holder for holding the substrate is covered with the same material as the target. 3. A sputtering apparatus in which high-speed particles are incident on a target in a vacuum chamber, and particles sputtered out from the target are deposited on a substrate.
At least one of the inner wall of the chamber, the holder holding the target and the holder holding the substrate is covered with the same material as the target, and at least one of the other is covered with a material having a sputtering rate smaller than stainless steel. Characteristic sputtering device. 4. The sputtering apparatus according to claim 1 or 3, wherein the material having a sputtering rate smaller than that of stainless steel is carbon.