JPH07223101A - Surface covered sintered hard alloy cutting tool - Google Patents

Surface covered sintered hard alloy cutting tool

Info

Publication number
JPH07223101A
JPH07223101A JP6034199A JP3419994A JPH07223101A JP H07223101 A JPH07223101 A JP H07223101A JP 6034199 A JP6034199 A JP 6034199A JP 3419994 A JP3419994 A JP 3419994A JP H07223101 A JPH07223101 A JP H07223101A
Authority
JP
Japan
Prior art keywords
artificial diamond
cemented carbide
hard alloy
diamond film
cutting tool
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6034199A
Other languages
Japanese (ja)
Inventor
Noribumi Kikuchi
則文 菊池
Akihiro Hasegawa
明宏 長谷川
Hiromichi Yoshikawa
博道 吉川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to JP6034199A priority Critical patent/JPH07223101A/en
Publication of JPH07223101A publication Critical patent/JPH07223101A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To provide a surface covered sintered hard alloy cutting tool excellent in adhesiveness of an artificial diamond film to a sintered hard alloy base surface. CONSTITUTION:In a surface covered sintered hard alloy cutting tool, an artificial diamond films having an average layer thickness of 1 to 20mum is formed on the surface of a base formed of a sintered hard alloy made of Co as a connection phase forming component and WC as a hard phase forming component. Then, such conditions may be satisfied, that the content of CO in the sintered hard alloy is 3 to 8w%, the average particle diameter of WC in the sintered hard alloy is 0.8 to 3mum, surface roughness on a surface joined with the artificial diamond film of the base is Ra=0.1 to 3mum and the average thickness of a deCO layer formed on the surface joined with the artificial diamond film of the base is 1 to 15mum.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、超硬合金基体表面に
対する人工ダイヤモンド皮膜の密着性にすぐれた表面被
覆超硬合金製切削工具に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface-coated cemented carbide cutting tool having excellent adhesion of an artificial diamond coating to the surface of a cemented carbide substrate.

【0002】[0002]

【従来の技術】従来、一般に基体が、結合相形成成分と
してのCoと、分散相形成成分としての炭化タングステ
ン(以下、WCで示す)からなる超硬合金で構成され、
この基体の表面に、熱フィラメント法やマイクロ波法、
さらに高周波プラズマ法などの気相合成法を用いて人工
ダイヤモンド皮膜を1〜20μmの平均層厚で形成して
なる表面被覆超硬合金製切削工具が知られており、これ
が例えば高Si含有のAl合金などの連続切削に用いら
れていることも良く知られるところである。
2. Description of the Related Art Conventionally, a substrate is generally composed of a cemented carbide containing Co as a binder phase forming component and tungsten carbide (hereinafter referred to as WC) as a dispersed phase forming component.
On the surface of this substrate, hot filament method, microwave method,
Further, there is known a surface-coated cemented carbide cutting tool in which an artificial diamond film is formed with an average layer thickness of 1 to 20 μm by using a gas phase synthesis method such as a high frequency plasma method. It is also well known that it is used for continuous cutting of alloys and the like.

【0003】[0003]

【発明が解決しようとする課題】一方、近年の切削加工
の省力化および自動化、さらに高速化はめざましく、こ
れに伴ない、切削工具には一段の汎用性および耐久性が
強く要求される傾向にあるが、上記の従来表面被覆超硬
合金製切削工具においては、特に超硬合金基体表面に対
する人工ダイヤモンド皮膜の密着性が十分でないため
に、より一段の高速切削や重切削、さらに断続切削など
に用いた場合に人工ダイヤモンド皮膜に剥離が発生し易
く、比較的短時間で使用寿命に至るのが現状である。
On the other hand, in recent years, labor-saving and automation of cutting work in recent years and further speeding up are remarkable, and accordingly, there is a tendency that cutting tools are required to have higher versatility and durability. However, in the above-mentioned conventional surface-coated cemented carbide cutting tool, especially because the adhesion of the artificial diamond film to the cemented carbide substrate surface is not sufficient, further high-speed cutting and heavy cutting, further intermittent cutting etc. When used, the artificial diamond film is liable to peel off and the service life is reached in a relatively short time.

【0004】[0004]

【課題を解決するための手段】そこで、本発明者等は、
上述のような観点から、上記の従来表面被覆超硬合金製
切削工具に着目し、これの人工ダイヤモンド皮膜の超硬
合金基体表面に対する密着性を向上させるべく研究を行
なった結果、Co含有量を3〜8重量%、WCの平均粒
径を0.8〜3μmに特定した超硬合金基体を用い、か
つこれの表面への人工ダイヤモンド皮膜の形成に先だっ
て、超硬合金基体の表面に、例えば電解エッチング処理
を施してこれを粗面化し、表面粗さをRa=0.1〜3
μmとすると共に、さらに続いてこれを例えば酸溶液中
に浸漬して基体表面部に脱Co層を1〜15μm、望ま
しくは2〜6μmの平均層厚で形成してやると、この結
果の表面被覆超硬合金製切削工具は、人工ダイヤモンド
皮膜の超硬合金基体表面に対する密着性が著しく向上
し、連続高速切削や連続重切削、さらに断続切削でも人
工ダイヤモンド皮膜に剥離の発生がなく、著しく長期に
亘ってすぐれた切削性能を発揮するという研究結果を得
たのである。
Therefore, the present inventors have
From the above-mentioned viewpoint, as a result of focusing on the conventional surface-coated cemented carbide cutting tool and conducting a study to improve the adhesion of the artificial diamond coating to the cemented carbide substrate surface, the Co content was changed. Using a cemented carbide substrate having 3 to 8% by weight and an WC average particle size of 0.8 to 3 μm, and prior to forming an artificial diamond film on the surface of the cemented carbide substrate, for example, Electrolytic etching is applied to roughen the surface, and the surface roughness is Ra = 0.1-3.
μm, and subsequently, this is immersed in, for example, an acid solution to form a Co-free layer on the surface of the substrate with an average layer thickness of 1 to 15 μm, preferably 2 to 6 μm. The hard alloy cutting tool has significantly improved adhesion of the artificial diamond coating to the surface of the cemented carbide substrate, and no peeling of the artificial diamond coating occurs during continuous high-speed cutting, continuous heavy cutting, or intermittent cutting. We obtained the research results that show excellent cutting performance.

【0005】この発明は、上記の研究結果にもとづいて
なされたものであって、結合相形成成分としてのCo
と、硬質相形成成分としてのWCからなる超硬合金で構
成された基体の表面に、人工ダイヤモンド皮膜を1〜2
0μmの平均層厚で形成してなる表面被覆超硬合金製切
削工具において、(a) 上記超硬合金のCo含有量:
3〜8重量%、(b) 上記超硬合金のWCの平均粒
径:0.8〜3μm、(c) 上記基体の人工ダイヤモ
ンド皮膜との接合表面における表面粗さ:Ra=0.1
〜3μm、(d) 上記基体の人工ダイヤモンド皮膜と
の接合表面部に形成した脱Co層の平均厚さ:1〜15
μm、以上(a)〜(d)の要件を満足してなる、人工
ダイヤモンド皮膜の超硬合金基体表面に対する密着性の
すぐれた表面被覆超硬合金製切削工具に特徴を有するも
のである。
The present invention has been made based on the above-mentioned research results, and Co as a binder phase forming component has been made.
And 1 to 2 artificial diamond coatings on the surface of the substrate made of cemented carbide containing WC as a hard phase forming component.
In a surface coated cemented carbide cutting tool formed with an average layer thickness of 0 μm, (a) Co content of the cemented carbide:
3 to 8% by weight, (b) average particle size of WC of the above cemented carbide: 0.8 to 3 μm, (c) surface roughness on the joint surface of the above substrate with the artificial diamond film: Ra = 0.1
˜3 μm, (d) Average thickness of the Co-free layer formed on the surface of the substrate to be joined with the artificial diamond film: 1 to 15
The present invention is characterized by a surface-coated cemented carbide cutting tool having excellent adhesion of the artificial diamond film to the surface of the cemented carbide substrate, the cutting tool satisfying the above requirements (a) to (d).

【0006】つぎに、この発明の切削工具において、上
記の通り構成要件を数値限定した理由を説明する。 (a) 超硬合金のCo含有量 その含有量が3重量%未満では、基体に所望の靭性を確
保することができないばかりでなく、脱Co層を所望の
厚さに形成することが困難になり、一方その含有量が8
重量%を越えると、脱Co層の強度が低下し、苛酷な切
削条件下では、この部分が原因の欠けが切刃に発生し易
くなることから、その含有量を3〜8重量%、望ましく
は4〜7重量%と定めた。
Next, the reason why the constituent requirements of the cutting tool of the present invention are numerically limited as described above will be described. (A) Co Content of Cemented Carbide If the content is less than 3% by weight, not only the desired toughness cannot be ensured in the substrate, but also it becomes difficult to form the Co-free layer to a desired thickness. , While its content is 8
When the content is more than 10% by weight, the strength of the Co-free layer is reduced, and under severe cutting conditions, a chip caused by this portion is likely to occur in the cutting edge, so the content thereof is preferably 3 to 8% by weight. Was determined to be 4 to 7% by weight.

【0007】(b) WCの平均粒径 その平均粒径が0.8μm未満では、電解エッチングで
Ra=0.1μm以上の表面粗さを形成するのが困難に
なり、一方その平均粒径が3μmを越えると、基体の強
度が低下するようになるばかりでなく、脱Co層の強度
も低下し、これが欠け発生の原因となり、さらに電解エ
ッチングでの表面粗さがRa=3μmを越えて粗くなり
すぎることから、その平均粒径を0.8〜3μm、望ま
しくは1〜2μmと定めた。
(B) Average particle size of WC If the average particle size is less than 0.8 μm, it becomes difficult to form a surface roughness of Ra = 0.1 μm or more by electrolytic etching. If the thickness exceeds 3 μm, not only the strength of the substrate decreases, but also the strength of the Co-free layer decreases, which causes the occurrence of chipping, and the surface roughness in electrolytic etching exceeds Ra = 3 μm and becomes rough. Therefore, the average particle size is set to 0.8 to 3 μm, preferably 1 to 2 μm.

【0008】(c) 基体の表面粗さ その表面粗さがRa=0.1μm未満では人工ダイヤモ
ンド皮膜に所望のすぐれた密着性を確保することができ
ず、一方その表面粗さがRa=3μmを越えると、形成
された人工ダイヤモンド皮膜の表面平滑さが損なわれる
ようになることから、その表面粗さをRa=0.1〜3
μm、望ましくはRa=0.2〜2μmと定めた。
(C) Surface Roughness of Substrate If the surface roughness is less than Ra = 0.1 μm, the desired excellent adhesion to the artificial diamond film cannot be secured, while the surface roughness Ra = 3 μm. If it exceeds, the surface smoothness of the formed artificial diamond film will be impaired. Therefore, the surface roughness is Ra = 0.1-3.
μm, preferably Ra = 0.2 to 2 μm.

【0009】(d) 脱Co層の平均厚さ その平均厚さが1μm未満では、Coがダイヤモンド核
の発生を抑制するのが避けられず、この結果密着性の高
い人工ダイヤモンド皮膜の形成が困難となり、一方その
平均厚さが15μmを越えると、これが原因で切刃に欠
けが発生し易くなることから、その平均厚さを1〜15
μm、望ましくは2〜6μmと定めた。
(D) Average thickness of Co-free layer If the average thickness is less than 1 μm, it is unavoidable that Co suppresses the generation of diamond nuclei, and as a result, it is difficult to form an artificial diamond film having high adhesion. On the other hand, when the average thickness exceeds 15 μm, the cutting edge is likely to be chipped due to this, so that the average thickness is 1 to 15 μm.
μm, preferably 2 to 6 μm.

【0010】(e) 人工ダイヤモンド皮膜の平均層厚 その平均層厚が1μm未満では所望のすぐれた耐摩耗性
を確保することができず、一方その平均層厚が20μm
を越えると、人工ダイヤモンド皮膜自体にチッピング
(微小欠け)が発生し易くなることから、その平均層厚
は1〜20μmと定められている。なお、3〜15μm
の平均層厚が望ましい。
(E) Average Layer Thickness of Artificial Diamond Film If the average layer thickness is less than 1 μm, desired excellent wear resistance cannot be secured, while the average layer thickness is 20 μm.
If it exceeds the range, chipping (fine chipping) is likely to occur in the artificial diamond film itself, so that the average layer thickness is defined as 1 to 20 μm. 3 to 15 μm
An average layer thickness of

【0011】[0011]

【実施例】つぎに、この発明の切削工具を実施例により
具体的に説明する。SPGN12408のチップ形状を
有し、かつ表1に示されるCo含有量およびWC平均粒
径の超硬合金基体を用意し、これに、電解液:30℃の
5%NaOH水溶液、陽極:上記超硬合金基体、陰極:
ステンレス鋼、電流密度:1A/dm2 、の条件で電解エ
ッチング処理を施し、この場合電解エッチング時間を1
〜10分の範囲内で調整し、もって同じく表1に示され
る表面粗さとし、さらにこれを30℃の5%HNO3
溶液からなる酸溶液中に浸漬し、この場合浸漬時間を2
〜30分の範囲内で調整して同じく表1に示される平均
厚さの脱Co層を基体表面部に形成し、この状態で上記
基体表面に、熱フィラメント法を用い、反応ガス組成:
CH4 /H2 =容量比で1.5/100、フィラメント
と基体表面との距離:15mm、雰囲気圧力:15torr、
フィラメント温度:2000℃、の条件で人工ダイヤモ
ンド皮膜を形成し、この場合処理時間を調整して、同じ
く表1に示される平均層厚とすることにより本発明表面
被覆超硬合金製切削工具(以下、本発明切削工具とい
う)1〜5および比較表面被覆超硬合金製切削工具(以
下、比較切削工具という)1〜7をそれぞれ製造した。
EXAMPLES Next, the cutting tool of the present invention will be specifically described by way of examples. A cemented carbide substrate having the shape of SPGN12408 and having the Co content and the WC average particle size shown in Table 1 was prepared, and an electrolyte solution: 5% NaOH aqueous solution at 30 ° C., an anode: the cemented carbide Alloy substrate, cathode:
Electrolytic etching is performed under the conditions of stainless steel and current density: 1 A / dm 2 , in which case the electrolytic etching time is 1
The surface roughness is also adjusted within the range of 10 minutes to obtain the surface roughness also shown in Table 1, and this is further dipped in an acid solution consisting of a 5% HNO 3 aqueous solution at 30 ° C.
A Co-free layer having the same average thickness as shown in Table 1 is formed on the surface of the substrate by adjusting within the range of -30 minutes, and in this state, the hot filament method is used on the surface of the substrate.
CH 4 / H 2 = 1.5 / 100 in volume ratio, distance between filament and substrate surface: 15 mm, atmospheric pressure: 15 torr,
An artificial diamond film is formed under the condition of filament temperature: 2000 ° C., and in this case, the treatment time is adjusted to obtain the average layer thickness shown in Table 1 as well. 1 to 5 and comparative surface-coated cemented carbide cutting tools (hereinafter referred to as comparative cutting tools) 1 to 7, respectively.

【0012】なお、比較切削工具1〜7は、構成要件の
うちのいずれかの要件(表1に※印を付す)がこの発明
の範囲から外れた超硬合金基体で構成されたものであ
る。
The comparative cutting tools 1 to 7 are made of a cemented carbide base material in which any one of the constituent requirements (marked with * in Table 1) is out of the scope of the present invention. .

【0013】ついで、この結果得られた本発明切削工具
1〜5および比較切削工具1〜7について、被削材:A
l−18重量%Si合金の丸棒、切削速度:600m/
min.、送り:0.1mm/rev.、切込み:0.5mm、切削
時間:30分、の条件での高Si含有のAl合金の乾式
連続高速切削試験、並びに被削材:Al−13重量%S
i合金、切削速度:1500m/min.、送り:0.15
mm/刃、切込み:5mm、切削時間:30分、の条件での
高Si含有Al合金の湿式フライス切削試練を行ない、
いずれの試験でも切刃の逃げ面摩耗幅を測定した。これ
らの測定結果を表2に示した。
Next, regarding the cutting tools 1 to 5 of the present invention and the comparative cutting tools 1 to 7 obtained as a result, the work material: A
1-18 wt% Si alloy round bar, cutting speed: 600 m /
min., feed: 0.1 mm / rev., depth of cut: 0.5 mm, cutting time: 30 minutes, dry continuous high-speed cutting test of Al alloy with high Si content, and work material: Al-13 weight % S
i alloy, cutting speed: 1500 m / min., feed: 0.15
mm / blade, depth of cut: 5 mm, cutting time: 30 minutes, wet-milling test of high Si content Al alloy,
In each test, the flank wear width of the cutting edge was measured. The results of these measurements are shown in Table 2.

【0014】[0014]

【表1】 [Table 1]

【0015】[0015]

【表2】 [Table 2]

【0016】[0016]

【発明の効果】表1,2に示される結果から、本発明切
削工具1〜5は、難削材の1種である高Si含有のAl
合金の連続高速切削およびフライス切削のいずれにおい
ても人工ダイヤモンド皮膜に剥離の発生なく、かつ切刃
に欠けやチッピングの発生も皆無な状態で、すぐれた切
削性能を発揮することが明らかであり、一方比較切削工
具1〜7に見られるように、超硬合金基体の構成要件の
うちのいずれかでもこの発明の範囲から外れると、人工
ダイヤモンド皮膜に剥離が生じたり、あるいは切刃に欠
けやチッピングが発生し、これが原因で比較的短時間で
使用寿命に至ることが明らかである。上述のように、こ
の発明の表面被覆超硬合金製切削工具は、超硬合金基体
表面に対する人工ダイヤモンド皮膜の密着性にすぐれた
ものであるので、苛酷な条件下での切削に際しても人工
ダイヤモンド皮膜に剥離の発生なく、すぐれた切削性能
を著しく長期に亘って発揮するのである。
From the results shown in Tables 1 and 2, the cutting tools 1 to 5 of the present invention show that high Si-containing Al, which is one of the difficult-to-cut materials, is used.
It is clear that in both continuous high speed cutting and milling of alloys, the artificial diamond film does not peel, and there is no chipping or chipping in the cutting edge, and it is clear that excellent cutting performance is exhibited. As seen in the comparative cutting tools 1 to 7, when any of the constituents of the cemented carbide substrate deviates from the scope of the present invention, the artificial diamond film is peeled off, or the cutting edge is chipped or chipped. It occurs, and it is clear that it reaches the end of its service life in a relatively short time. As described above, the surface-coated cemented carbide cutting tool of the present invention has excellent adhesion of the artificial diamond film to the surface of the cemented carbide substrate, so that the artificial diamond film can be cut even under severe conditions. It does not cause peeling and exhibits excellent cutting performance over a remarkably long period of time.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 結合相形成成分としてのCoと、硬質相
形成成分としての炭化タングステンからなる超硬合金で
構成された基体の表面に、人工ダイヤモンド皮膜を1〜
20μmの平均層厚で形成してなる表面被覆超硬合金製
切削工具において、 (a) 上記超硬合金のCo含有量:3〜8重量%、 (b) 上記超硬合金の炭化タングステンの平均粒径:
0.8〜3μm、 (c) 上記基体の人工ダイヤモンド皮膜との接合表面
における表面粗さ:Ra=0.1〜3μm、 (d) 上記基体の人工ダイヤモンド皮膜との接合表面
部に形成した脱Co層の平均厚さ:1〜15μm、以上
(a)〜(d)の要件を満足することを特徴とする表面
被覆超硬合金製切削工具。
1. An artificial diamond film is formed on a surface of a substrate composed of a cemented carbide composed of Co as a binder phase forming component and tungsten carbide as a hard phase forming component.
In a surface-coated cemented carbide cutting tool formed with an average layer thickness of 20 μm, (a) Co content of the cemented carbide: 3 to 8% by weight, (b) average tungsten carbide of the cemented carbide. Particle size:
0.8 to 3 μm, (c) Surface roughness on the joint surface of the substrate with the artificial diamond film: Ra = 0.1 to 3 μm, (d) Desorption formed on the joint surface of the substrate with the artificial diamond film. Average thickness of Co layer: 1 to 15 μm, satisfying the above requirements (a) to (d), a surface coated cemented carbide cutting tool.
JP6034199A 1994-02-07 1994-02-07 Surface covered sintered hard alloy cutting tool Pending JPH07223101A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6034199A JPH07223101A (en) 1994-02-07 1994-02-07 Surface covered sintered hard alloy cutting tool

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6034199A JPH07223101A (en) 1994-02-07 1994-02-07 Surface covered sintered hard alloy cutting tool

Publications (1)

Publication Number Publication Date
JPH07223101A true JPH07223101A (en) 1995-08-22

Family

ID=12407503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6034199A Pending JPH07223101A (en) 1994-02-07 1994-02-07 Surface covered sintered hard alloy cutting tool

Country Status (1)

Country Link
JP (1) JPH07223101A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0517724A (en) * 1991-07-16 1993-01-26 Mitsuba Electric Mfg Co Ltd Pressing equipment for adhesive material
JP2002115057A (en) * 2000-10-06 2002-04-19 Ulvac Japan Ltd Process for selectively depositing graphite nanofiber thin film by thermal cvd process
KR100652649B1 (en) * 2004-12-16 2006-12-01 재단법인 포항산업과학연구원 METHOD OF MAKING WC-Co FEEDSTOCK POWDERS WITH Co FILMS FOR THERMAL SPRAYING
JP2010018861A (en) * 2008-07-11 2010-01-28 Toyota Central R&D Labs Inc Coated cemented carbide member
JP2014121864A (en) * 2012-11-20 2014-07-03 Mitsuboshi Diamond Industrial Co Ltd Scribing wheel and manufacturing method thereof
CN104261667A (en) * 2012-10-31 2015-01-07 三星钻石工业股份有限公司 Scribing Wheel And Manufacturing Method Thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0517724A (en) * 1991-07-16 1993-01-26 Mitsuba Electric Mfg Co Ltd Pressing equipment for adhesive material
JP2002115057A (en) * 2000-10-06 2002-04-19 Ulvac Japan Ltd Process for selectively depositing graphite nanofiber thin film by thermal cvd process
KR100652649B1 (en) * 2004-12-16 2006-12-01 재단법인 포항산업과학연구원 METHOD OF MAKING WC-Co FEEDSTOCK POWDERS WITH Co FILMS FOR THERMAL SPRAYING
JP2010018861A (en) * 2008-07-11 2010-01-28 Toyota Central R&D Labs Inc Coated cemented carbide member
CN104261667A (en) * 2012-10-31 2015-01-07 三星钻石工业股份有限公司 Scribing Wheel And Manufacturing Method Thereof
JP2014121864A (en) * 2012-11-20 2014-07-03 Mitsuboshi Diamond Industrial Co Ltd Scribing wheel and manufacturing method thereof

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