JPH0721860B2 - Method of manufacturing magnetic recording medium - Google Patents

Method of manufacturing magnetic recording medium

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Publication number
JPH0721860B2
JPH0721860B2 JP1312589A JP31258989A JPH0721860B2 JP H0721860 B2 JPH0721860 B2 JP H0721860B2 JP 1312589 A JP1312589 A JP 1312589A JP 31258989 A JP31258989 A JP 31258989A JP H0721860 B2 JPH0721860 B2 JP H0721860B2
Authority
JP
Japan
Prior art keywords
alloy
copn
magnetic recording
thin film
recording medium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1312589A
Other languages
Japanese (ja)
Other versions
JPH03173915A (en
Inventor
敏男 安藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Victor Company of Japan Ltd
Original Assignee
Victor Company of Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Victor Company of Japan Ltd filed Critical Victor Company of Japan Ltd
Priority to JP1312589A priority Critical patent/JPH0721860B2/en
Publication of JPH03173915A publication Critical patent/JPH03173915A/en
Publication of JPH0721860B2 publication Critical patent/JPH0721860B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • Magnetic Record Carriers (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Thin Magnetic Films (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、Co系合金薄膜を磁性薄膜とする磁気記録媒体
の製造方法に関する。
The present invention relates to a method for manufacturing a magnetic recording medium using a Co-based alloy thin film as a magnetic thin film.

(従来の技術) 近年、種々のCo系合金薄膜を磁性薄膜とする磁気記録媒
体が検討されている。
(Prior Art) In recent years, magnetic recording media using various Co-based alloy thin films as magnetic thin films have been studied.

例えば特開昭57−167615号にはP含有量6重量パーセン
ト以下のCoPまたはCoNiP合金をスパッタリングにより形
成して磁性薄膜とする磁気記録媒体の製造方法が記載さ
れている。
For example, JP-A-57-167615 describes a method for producing a magnetic recording medium in which a CoP or CoNiP alloy having a P content of 6% by weight or less is formed by sputtering to form a magnetic thin film.

また、CoNi合金を窒素を含むガス中でスパッタしてCoNi
合金の窒化膜を形成し、このCoNi合金の窒化膜を真空中
で340℃で熱処理したものを磁気記録媒体の磁性薄膜と
することも検討されている(IEEE Trans.on.Magn.MAG−
23、No.5(1987)3414)。
In addition, CoNi alloy is sputtered in a gas containing nitrogen to produce CoNi alloy.
It is also considered to form a nitride film of an alloy and heat-treat this nitride film of a CoNi alloy at 340 ° C. in a vacuum to form a magnetic thin film of a magnetic recording medium (IEEE Trans.on.Magn.MAG-
23, No. 5 (1987) 3414 ).

(発明が解決しようとする課題) しかしながら、上記特開昭57−167615号に記載された磁
気記録媒体のようにAr等の不活性ガス雰囲気下での通常
のスパッタリングによりCo系合金磁性薄膜を形成した磁
気記録媒体は、その保磁力Hcが1100エールステッド以下
で、高密度記録を行なう上で望ましい1200エールステッ
ドには到達していない。
(Problems to be Solved by the Invention) However, as in the magnetic recording medium described in JP-A-57-167615, a Co-based alloy magnetic thin film is formed by ordinary sputtering in an atmosphere of an inert gas such as Ar. The magnetic recording medium has a coercive force Hc of 1100 Oersted or less, which is less than 1200 Oersted which is desirable for high density recording.

これに対し、後者のようにCoNi合金の窒化膜を真空熱処
理したものを磁性薄膜とする磁気記録媒体の中にはその
保磁力Hcが1200エールステッドに達するものもあるもの
の、このような磁気記録媒体は磁気記録再生時のS/N比
が悪いという欠点がある。
On the other hand, some of the magnetic recording media, such as the latter, in which a nitride film of CoNi alloy is subjected to vacuum heat treatment as a magnetic thin film have a coercive force Hc of 1200 Oersted. The medium has a drawback that the S / N ratio during magnetic recording / reproduction is poor.

他方、磁性薄膜を形成するCo合金にPtを添加したり、非
磁性基板とCo合金磁性薄膜との間に例えばCr下地層を設
けることにより磁気記録媒体の保磁力Hcを高め、保磁力
Hc及び磁気記録再生時のS/N比が共に優れた磁気記録媒
体を得ることができるが、このように高価なPtを添加す
ると磁気記録媒体がコスト高になり、また、下地層を設
けると磁気記録媒体の製造工程が複雑になるという問題
がある。
On the other hand, the coercive force Hc of the magnetic recording medium is increased by adding Pt to the Co alloy forming the magnetic thin film or providing a Cr underlayer between the non-magnetic substrate and the Co alloy magnetic thin film to increase the coercive force Hc.
Although it is possible to obtain a magnetic recording medium having both excellent Hc and an S / N ratio during magnetic recording / reproducing, adding such expensive Pt increases the cost of the magnetic recording medium, and providing an underlayer There is a problem that the manufacturing process of the magnetic recording medium becomes complicated.

(課題を解決するための手段) 本発明は上記課題を解決するため、非磁性基板上に直接
または下地層を介してCoP合金に対してP成分を5〜9
原子パーセント(at%)、CoPN合金全体に対してN成分
を10〜50at%含有するCoPN合金薄膜を形成し、次いでこ
のCoPN合金薄膜を330℃以上に真空加熱してCoPN合金全
体に対して3at%以下の割合でN成分を含有するCoPN合
金薄膜を形成して磁性薄膜としたものである。
(Means for Solving the Problems) In order to solve the above problems, the present invention provides a P component of 5 to 9 with respect to a CoP alloy directly or on an underlayer.
A CoPN alloy thin film containing atomic percentage (at%), 10 to 50 at% of N component with respect to the entire CoPN alloy is formed, and then this CoPN alloy thin film is vacuum heated to 330 ° C. or higher to 3 at with respect to the entire CoPN alloy. % To form a magnetic thin film.

(作用) 上記本発明の方法によれば、CoPN合金薄膜を330℃以上
の温度で真空加熱することによりCoPN合金薄膜中に10〜
50at%含有していたN成分が気体となって放出されて3a
t%以下に減少し、このN成分の放出過程でCoPN合金の
結晶粒子が孤立化する。ここで真空加熱前のCoPN合金全
体に対するN成分の上記割合は10at%未満だと前記CoPN
合金の結晶粒子の孤立化が充分なされず、50at%を越え
ると安定したCoPN合金が得られない。
(Operation) According to the method of the present invention, by heating the CoPN alloy thin film in vacuum at a temperature of 330 ° C. or higher, the CoPN alloy thin film is heated to 10 to 10
The N component contained at 50 at% was released as a gas and 3a
The amount is reduced to t% or less, and the crystal grains of the CoPN alloy are isolated during the process of releasing the N component. If the above-mentioned ratio of N component to the whole CoPN alloy before vacuum heating is less than 10 at%, the CoPN alloy
The crystal grains of the alloy are not sufficiently isolated, and if it exceeds 50 at%, a stable CoPN alloy cannot be obtained.

そしてこの結晶粒子の孤立化により磁気記録再生時のS/
N比が高まり、また、この結晶粒子の孤立化とCoP合金に
対してP成分を5〜9at%としたCoPN合金薄膜組成とに
より保磁力HCは1200エールステッド以上となる。
The isolation of these crystal grains causes S /
The N ratio is increased, and the coercive force H C becomes 1200 oersted or more due to the isolation of the crystal grains and the CoPN alloy thin film composition in which the P component is 5 to 9 at% with respect to the CoP alloy.

〔実施例〕〔Example〕

以下に実施例を示し、本発明を更に詳しく説明する。 Hereinafter, the present invention will be described in more detail with reference to examples.

(実施例) 非磁性基板としてガラス板を使用し、このガラス板上
に、Co板とこの上にCoPのペレットを配置したものをタ
ーゲットとしてDCマグネトロンスパッタ法により1×10
-6Torr以下にチャンバ内を排気した後、N2を5〜15%含
むArとN2の混合ガスを導入してチャンバ内の圧力を1〜
2×10-2Torr、基板温度を室温として、DC300〜400Wの
スパッタ電力でスパッタを行ない、N成分を10〜50at%
含有する種々の組成のCoPN合金薄膜を得た。
(Example) A glass plate was used as a non-magnetic substrate, and a Co plate and a CoP pellet on the glass plate were placed on the glass plate as a target and subjected to DC magnetron sputtering at 1 × 10 5.
After evacuating the chamber to -6 Torr or less, introduce a mixed gas of Ar and N 2 containing 5 to 15% of N 2 to reduce the pressure in the chamber to 1 to
2 × 10 -2 Torr, substrate temperature is room temperature, sputtering is performed with DC 300-400 W sputtering power, and N component is 10-50 at%
CoPN alloy thin films containing various compositions were obtained.

次いでこれ等のCoPN合金薄膜を1×10-5Torr以下の真空
中で270〜370℃の温度で2時間熱処理を行なったとこ
ろ、CoPN合金薄膜中のN成分は3at%以下となった。
Next, when these CoPN alloy thin films were heat-treated at a temperature of 270 to 370 ° C. for 2 hours in a vacuum of 1 × 10 −5 Torr or less, the N component in the CoPN alloy thin films became 3 at% or less.

得られた種々のCoP合金に対してPの組成の異なるCoPN
合金薄膜を有する磁気記録媒体の保磁力HCを測定したと
ころ、第1図に示す結果を得た。
CoPN with different P composition for various CoP alloys obtained
When the coercive force H C of the magnetic recording medium having the alloy thin film was measured, the results shown in FIG. 1 were obtained.

第1図の結果からPを全く含まない場合の磁気記録媒体
の保磁力HCは1000エールステッド程度であるのに対し、
CoP合金に対してP成分が5〜9at%の場合のHCは1200エ
ールステッド以上となり、特にP成分が7.5at%の場合
にはHCが1500エールステッドにも達する磁気記録媒体が
得られた。
From the results of FIG. 1, the coercive force H C of the magnetic recording medium when P is not contained at all is about 1000 Oersted, whereas
When the P component is 5 to 9 at% with respect to the CoP alloy, the H C is 1200 oersteds or more, and particularly when the P component is 7.5 at%, a magnetic recording medium can be obtained in which the H C reaches 1500 oersted. It was

第2図にCoPN合金薄膜の前記真空加熱処理温度と得られ
た磁気記録媒体の飽和磁化MSとの関係を示す。
FIG. 2 shows the relationship between the vacuum heat treatment temperature of the CoPN alloy thin film and the saturation magnetization M S of the obtained magnetic recording medium.

第2図の結果から270℃の熱処理温度ではMSがほとんど
ゼロに等しく、300℃付近で立ち上がりはじめ、330℃で
ほぼ一定の700emu/ccのMSが得られる。
Most equal to zero M S at the heat treatment temperature of 270 ° C. From the results of FIG. 2, initially rises at around 300 ° C., approximately M S constant 700 emu / cc can be obtained at 330 ° C..

従ってN成分が放出されるCoPN合金薄膜の真空加熱処理
温度は330℃以上であることが必要である。
Therefore, the vacuum heat treatment temperature of the CoPN alloy thin film from which the N component is released needs to be 330 ° C. or higher.

次いで以上の実施例の磁気記録媒体の内、保磁力Hcが12
00エールステッドのものにつき、トラック幅14μm、ギ
ャップ長0.4μmのウインチェスタ型磁気ヘッドを用い
て、線速度6.5m/secで40KFCIの信号のS/N比を測定した
ところ、このS/N比は35〜37dBであった。
Next, among the magnetic recording media of the above examples, the coercive force Hc was 12
We measured the S / N ratio of a 40KFCI signal at a linear velocity of 6.5m / sec using a Winchester type magnetic head with a track width of 14μm and a gap length of 0.4μm for 00 Oersted. Was 35 to 37 dB.

(比較例1) スパッタガスAr100%(N2なし)とした以外は上記実施
例と同様にして比較例1の磁気記録媒体を製造し、この
磁気記録媒体の保磁力Hcを測定したところ、第1図の破
線で示される結果を得た。
Comparative Example 1 A magnetic recording medium of Comparative Example 1 was manufactured in the same manner as in the above Example except that the sputtering gas was Ar 100% (without N 2 ), and the coercive force Hc of this magnetic recording medium was measured. The result shown by the broken line in FIG. 1 was obtained.

この結果から比較例1の磁気記録媒体の保磁力Hcは最も
高いものでも500エールステッドであることが分かる。
From this result, it is understood that the highest coercive force Hc of the magnetic recording medium of Comparative Example 1 is 500 Oersted.

(比較例2) ターゲットにConi合金ターゲットを用いた以外は上記実
施例と同様にしてCoNi系合金薄膜を磁性薄膜とする比較
例2の磁気記録媒体を製造し、この磁気記録媒体の保磁
力Hc及びS/N比を上記実施例と同様にして測定したとこ
ろ、保磁力HCは最大で1200エールステッドであり、S/N
比は32dBであり、保磁力HCが1200エールステッドである
上記実施例の磁気記録媒体に比較してS/N比は3〜5dB低
い値であった。
(Comparative Example 2) A magnetic recording medium of Comparative Example 2 using a CoNi-based alloy thin film as a magnetic thin film was manufactured in the same manner as in the above-described example except that a Coni alloy target was used as the target, and the coercive force Hc of this magnetic recording medium was manufactured. And the S / N ratio was measured in the same manner as in the above example, the coercive force H C was at most 1200 Oersted, and the S / N ratio was
The ratio was 32 dB, and the S / N ratio was 3 to 5 dB lower than that of the magnetic recording medium of the above example having a coercive force H C of 1200 Oersted.

尚、上記実施例においてCoPN合金磁性薄膜の接着性等の
改善のために非磁性基板とCoPN合金磁性薄膜との間に下
地層を設けたりすることができるのは勿論である。
Of course, in the above-mentioned embodiment, an underlayer may be provided between the non-magnetic substrate and the CoPN alloy magnetic thin film in order to improve the adhesiveness of the CoPN alloy magnetic thin film.

(発明の効果) 以上の実施例から明らかなように、本発明は非磁性基板
上に直接または下地層上を介してN成分を10〜50at%含
有しているCoPN合金薄膜を形成し、次いでこのCoPN合金
薄膜を330℃以上に真空加熱してN成分を3at%以下に減
少してCoPN合金の結晶粒子を孤立化することにより磁気
記録再生時のS/N比を高め、且つこのCoPN合金の結晶粒
子の孤立化とCoPN合金中のCoP合金に対するP成分組成
を5〜9at%とすることにより相乗的に磁気記録媒体の
保磁力を高めたものである。
(Effects of the Invention) As is apparent from the above examples, the present invention forms a CoPN alloy thin film containing an N component in an amount of 10 to 50 at% directly on a non-magnetic substrate or through an underlayer, and then This CoPN alloy thin film is heated to 330 ° C. or higher in vacuum to reduce the N component to 3 at% or less to isolate the crystal grains of the CoPN alloy to increase the S / N ratio during magnetic recording / reproduction, and this CoPN alloy The coercive force of the magnetic recording medium is synergistically enhanced by isolating the crystal grains of (3) and setting the P component composition to the CoP alloy in the CoPN alloy to 5 to 9 at%.

このため本発明方法によれば、従来のように保磁力を高
めるためにCo合金にPtを添加したり、非磁性基板とCo合
金磁性薄膜との間に、例えばCr下地層を設けなくても、
安価な材料で、かつ単純な工程で高保磁力でありながら
磁気記録再生時のS/N比の高い磁気記録媒体を提供する
ことができる。
Therefore, according to the method of the present invention, Pt is added to the Co alloy in order to increase the coercive force as in the conventional case, or a Cr underlayer is not provided between the nonmagnetic substrate and the Co alloy magnetic thin film. ,
It is possible to provide a magnetic recording medium which is an inexpensive material and which has a high coercive force in a simple process and has a high S / N ratio during magnetic recording and reproduction.

【図面の簡単な説明】 第1図は実施例及び比較例の磁気記録媒体のCoP系合金
磁性薄膜中のP含有量と保磁力HCの関係を表わしたグラ
フ、第2図は本発明に係るN成分を10〜50at%含有して
いるCoPN合金薄膜を真空加熱処理した際の熱処理温度と
得られた磁気記録媒体の飽和磁化MSとの関係を表わした
グラフである。
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a graph showing the relationship between P content and coercive force H C in CoP alloy magnetic thin films of magnetic recording media of Examples and Comparative Examples, and FIG. 3 is a graph showing the relationship between the heat treatment temperature and the obtained saturation magnetization M S of the magnetic recording medium when a CoPN alloy thin film containing 10 to 50 at% of N component is subjected to vacuum heat treatment.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】非磁性基板上に直接または下地層を介して
CoP合金に対してP成分を5〜9原子パーセント(at
%)、CoPN合金全体に対してN成分を10〜50at%含有す
るCoPN合金薄膜を形成し、次いでこのCoPN合金薄膜を33
0℃以上に真空加熱してCoPN合金全体に対してN成分を3
at%以下含有するCoPN合金薄膜を磁性薄膜として形成す
ることを特徴とする磁気記録媒体の製造方法。
1. A nonmagnetic substrate directly or through an underlayer
5-9 atomic percent (at
%), A CoPN alloy thin film containing 10 to 50 at% of N component with respect to the entire CoPN alloy is formed, and then this CoPN alloy thin film
Vacuum-heat above 0 ℃ to reduce the N content to 3 for the entire CoPN alloy.
A method of manufacturing a magnetic recording medium, comprising forming a CoPN alloy thin film containing at% or less as a magnetic thin film.
JP1312589A 1989-11-30 1989-11-30 Method of manufacturing magnetic recording medium Expired - Lifetime JPH0721860B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1312589A JPH0721860B2 (en) 1989-11-30 1989-11-30 Method of manufacturing magnetic recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1312589A JPH0721860B2 (en) 1989-11-30 1989-11-30 Method of manufacturing magnetic recording medium

Publications (2)

Publication Number Publication Date
JPH03173915A JPH03173915A (en) 1991-07-29
JPH0721860B2 true JPH0721860B2 (en) 1995-03-08

Family

ID=18031021

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1312589A Expired - Lifetime JPH0721860B2 (en) 1989-11-30 1989-11-30 Method of manufacturing magnetic recording medium

Country Status (1)

Country Link
JP (1) JPH0721860B2 (en)

Also Published As

Publication number Publication date
JPH03173915A (en) 1991-07-29

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