JPH07201945A - Semiconductor testing apparatus - Google Patents

Abstract

PURPOSE:To provide a semiconductor testing apparatus consisting of a wafer probe for light-emitting element which can measure, at a low cost, an optical output of a light emitting element with high accuracy and reliability. CONSTITUTION:In a semiconductor detecting apparatus consisting of a wafer probe apparatus for light-emitting element comprising a probe card for impressing voltage and supply power to a light-emitting element and conducting voltage measurement and current measurement and a photosensitive device for measuring amount of light beam, a light receiving surface of the photosensitive device is fixed at the predetermined position for the probe card and the light receiving surface of the photosensitive device is provided at the position where it does not block a beam of light emitted perpendicularly from the light emitting section of an element to be measured on the wafer. Thereby, relative position between the light receiving surface of the photosensitive device and the light-emitting element on the wafer can be accurately maintained for the accurate measurement. Moreover, the photosensitive device is simply constituted to realize reduction in size and improve measuring sensitivity through close disposition of the light receiving surface against the element.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor inspection device used for inspecting a light emitting semiconductor element.

[0002]

2. Description of the Related Art Conventionally, a wafer prober device is known as one of semiconductor inspection devices, but a wafer prober device used for inspecting a wafer of a light emitting semiconductor element (hereinafter referred to as a light emitting element) is As shown in 17, a probe card for measuring electrical characteristics and a light receiving device for measuring optical characteristics are included. The probe card is connected to a power supply for element measurement and an electrical characteristic tester consisting of an ammeter, a voltmeter, etc., and applies voltage / injects current to a predetermined light-emitting element and measures the current value / voltage value at that time. Then, the electrical quality of the light emitting element is determined. In addition, the optical characteristics of the light emitting element are measured by injecting a predetermined operating current into the light emitting element through the probe card, measuring the amount of light emitted from the element at that time with a light receiving device, performing optical-electrical conversion, and then using an optical characteristic tester. Pass / fail judgment is performed.

This light receiving device is generally constructed so as to be movable with respect to the probe card, and is retracted from the measurement position except during measurement, and is moved to the measurement position during measurement. The reason for this is that in manual probers and semi-automatic probers, that is, wafer probers of the type that perform manual alignment of the probe card and the light-emitting elements on the wafer, the operator must touch the probe and the electrode pads of the light-emitting elements from above the wafer vertically. This is because, in order to align the position of (1) while looking at the stereoscopic microscope or the like, the alignment cannot be performed unless the light receiving device is retracted from the measurement position immediately above the light emitting element during alignment as shown in FIG. And at the time of measurement,
As shown in (b), the light receiving device is moved to the measurement position directly above the element to measure the optical characteristics. Therefore, it becomes impossible to observe the light emitting element from directly above during measurement. This makes it impossible to monitor the light emission state at the same time as measuring the electrical and optical characteristics, judge the quality of the element light emission shape using image processing, etc., and make it impossible for the operator to check the measurement situation. There is.

FIG. 19 is an enlarged explanatory view around a light emitting element and a probe of a conventional wafer prober. The distance from the lower surface of the probe card to the wafer surface (height of the probe) is generally about 1 to 3 mm. The thickness of the probe card is generally about 2 to 3 mm. Therefore, it is difficult to provide the light receiving device provided with the moving mechanism on the lower side of the probe card, and generally the light receiving device is provided on the upper surface side of the probe card. Therefore, the distance between the light emitting element on the wafer and the light receiving surface of the light receiving device is generally 10 mm or more. Therefore, in order to receive the light of the light emitting element sufficiently, it is necessary to increase the area of the light receiving surface. However, in a light-receiving device having a large light-receiving surface (generally, a photodiode or a solar cell is used), the influence of ambient light from other than the light-emitting element and noise such as dark current (dark current) of the light-receiving device itself Becomes larger and the accuracy of the measurement decreases. Further, although the light receiving device is provided with a moving mechanism, if the precision of this mechanism is poor, the relative position between the light receiving surface and the light emitting element changes for each measurement, and the measurement accuracy decreases. Therefore, this moving mechanism needs to be highly accurate, which causes a problem that the size of the light receiving device becomes large, installation becomes difficult, and the light receiving device becomes expensive.

In a conventional wafer prober device used for inspecting a wafer of light emitting elements, a light receiving element having a large light receiving surface is used for receiving and measuring light emitted from light emitting elements relatively distant from each other. The device must receive as much of the luminous flux as possible from the light emitting element, and it is difficult to measure only part of the luminous flux from the light emitting element in detail to determine the distribution of the emitted light, and to judge the quality of uneven light emission. there were. Therefore, an expensive measuring device using an image pickup device and an image processing device is required to measure the light emission unevenness, and the measurement takes time.

[0006]

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances. In claims 1 to 8 of the present invention, the light output of the light emitting element is highly accurate, highly reliable, and An object of the present invention is to provide a semiconductor inspection device including a wafer prober for a light emitting element that can be measured at low cost.
Further, it is an object of claims 9 and 10 of the present invention to provide a device capable of measuring the light emission distribution of the light emitting element at a high speed and at a low cost in the semiconductor inspection device.

[0007]

The gist of the present invention resides in that, in claim 1, a light emitting element and a probe card for applying voltage to the light emitting element, supplying current, measuring voltage and measuring current are used. In a semiconductor inspection device comprising a wafer prober device for a light emitting element having a light receiving device of (1), the light receiving surface of the light receiving device is fixed at a predetermined position with respect to the probe card, and the light receiving surface of the light receiving device is on the wafer. That is, it is installed at a position that does not block the light flux emitted perpendicularly to the wafer from the light emitting portion of the device under test.

According to another aspect of the semiconductor inspection apparatus of the present invention, the light receiving device of the wafer prober device for light emitting elements of the first aspect is composed of at least a photodiode. According to a third aspect of the semiconductor inspection apparatus, the light receiving device of the wafer prober device for a light emitting element in the first aspect comprises at least an optical fiber and a photodiode. In the semiconductor inspection apparatus according to claim 4, the light receiving device of the wafer prober device for a light emitting element according to claim 1 comprises at least a fiber plate and a photodiode.

According to a fifth aspect of the semiconductor inspection apparatus, the light receiving device of the wafer prober device for light emitting elements according to the first aspect is at least a SELFOC lens array (SLA).
And a photodiode.
In the semiconductor inspection apparatus according to claim 6, the light receiving device of the wafer prober device for light emitting element according to claim 1 is composed of at least a roof mirror lens array (RMLA) and a photodiode.

According to a seventh aspect of the semiconductor inspection apparatus of the present invention, the light receiving device of the wafer prober device for a light emitting element according to the first aspect comprises at least a reflecting mirror and a photodiode. In the semiconductor inspection apparatus according to claim 8, the light receiving device of the wafer prober device for light emitting element according to claim 1 comprises at least a prism and a photodiode.

According to a ninth aspect of the semiconductor inspection apparatus, there is at least two or more light receiving devices fixed to the probe card of the wafer prober device for light emitting elements according to the first aspect. According to a tenth aspect of the semiconductor inspection apparatus, a light output value (L1) obtained from the light receiving device 1 and a light receiving device 2 are used as a method of selecting light emitting elements using the wafer prober device for light emitting elements according to the ninth aspect. The optical output value (L2), ..., The ratio (L2 / L1) to the optical output value (Ln) (n = 1,2, ..., n: n integer) obtained from the photodetector n,
... (Ln / L1) is taken, the value is compared with a preset value, and the value is used to determine the light output of the light emitting element.

[0012]

Therefore, according to the semiconductor inspection apparatus of the first aspect of the present invention, the wafer prober device for the light emitting element can accurately maintain the relative positional relationship between the light receiving surface of the light receiving device and the light emitting element on the wafer. Various measurements are possible. Further, since the structure of the light receiving device can be simplified, the device can be downsized, and the light receiving surface can be brought closer to the element.
Therefore, the measurement sensitivity can be improved. Further, since the structure of the light receiving device can be simplified, the device can be provided at low cost.

According to another aspect of the semiconductor inspection apparatus of the present invention,
It is possible to make the light receiving device used in the wafer prober device for a light emitting device in 1) small in size, highly sensitive, highly accurate and inexpensive. In the semiconductor inspection apparatus according to claim 3, the light receiving surface of the light receiving device used in the wafer prober device for light emitting elements according to claim 1 can be separated from the photoelectric conversion portion, and the light receiving surface can be brought close to the light emitting element. It will be possible. As a result, it is possible to reduce the influence of noise between the electrical characteristic measurement system and the measurement system and improve the measurement accuracy. In the semiconductor inspection apparatus according to claim 4, the light receiving surface of the light receiving device used in the wafer prober device for the light emitting element according to claim 1 can be brought close to the light emitting element and the area of the light receiving surface can be widened. It is possible to improve the accuracy of measuring the optical characteristics of a large light emitting element.

According to the semiconductor inspection apparatus of claim 5,
Since it is possible to lengthen the light-receiving surface of the light-receiving device used for the wafer prober device for light-emitting elements in the above and reduce the distribution of in-plane sensitivity of the light-receiving surface, it is possible to obtain high accuracy of long light-emitting elements such as array light sources. Various measurements are possible. Claim 6
In the semiconductor inspection device according to claim 1, since the light receiving surface of the light receiving device used in the wafer prober device for a light emitting element according to claim 1 can be elongated and the in-plane sensitivity distribution of the light receiving surface can be reduced, an array light source, etc. It is possible to measure the long light emitting element with high accuracy.

According to the semiconductor inspection device of claim 7,
In the light receiving device used in the wafer prober device for the light emitting device in (1), since the optical path of the light emitted from the light emitting device can be controlled by the reflecting mirror, the light receiving device can be downsized. In the semiconductor inspection apparatus according to claim 8, in the light receiving device used for the wafer prober device for light emitting element according to claim 1, since the optical path of the light emitted from the light emitting element can be bent by the prism, a plurality of light receiving surfaces can be used. It is possible to combine the lights of the above and perform light-electricity conversion. This makes it possible to measure weak light with high accuracy. Further, since the optical path of light can be controlled, the light receiving device can be downsized.

According to the semiconductor inspection apparatus of claim 9, claim 1
Since the wafer prober device for the light emitting device in 2 has two or more light receiving devices, the light emitted from the light emitting devices can be measured by a plurality of light receiving devices. Therefore, the light emitting distribution of the light emitting devices can be measured by appropriately arranging the light receiving surfaces. It becomes possible to do. According to a tenth aspect of the semiconductor inspection apparatus, from the measurement result of the light emission distribution of the light emitted from the light emitting element in the light emitting element wafer prober apparatus according to the ninth aspect, an abnormality due to dust or the like attached in the process step of the light emitting element or an element formation abnormality is caused. It becomes possible to detect the light emission failure together with the cause of the failure at high speed.

[0017]

Embodiments of the present invention will now be described in detail with reference to the drawings. [Embodiment 1] FIG. 1 is an explanatory view of a wafer prober device for a light emitting device showing an embodiment of claim 1. In the wafer prober device for a light emitting device shown in FIG. 1, a light receiving device is fixed at a predetermined position on the lower surface of the probe card. In this case, the light-receiving surface of the light-receiving device does not block the light beam emitted perpendicularly to the wafer from the light-emitting portion of the light-emitting element at the tip of the probe of the probe card, and the total value of the far-field pattern out of the light emitted from the light-emitting portion. At least a part of the angle formed by the half-angled light and the normal to the light-receiving surface is the normal of the light and the light-receiving surface when the light is totally reflected on the surface of the light-receiving surface at the wavelength of the light emitted from the light-emitting part. It is fixed so that it comes to a position that is smaller than the angle it makes.

The light receiving device fixed in this way does not hinder the device observation by the stereoscopic microscope or the monitor camera from the vertical direction of the wafer during the device alignment and the device state observation at the time of measurement. Further, since the relative positional relationship between the light receiving surface and the probe tip is fixed, if the probe tip and the light emitting element are aligned, the light receiving surface and the light emitting element are automatically aligned.
A photometric error due to the positional deviation between the light emitting element and the light receiving surface of the light receiving device does not occur, and when repeated measurement is performed, highly accurate measurement can be performed. Further, since the moving mechanism of the light receiving device such as the conventional wafer prober for the light emitting element is not required, the wafer blower can be simplified and the cost can be reduced.

FIG. 2 is an enlarged view of the vicinity of the light receiving device of the wafer prober device for a light emitting device of the embodiment according to claim 1 shown in FIG. In FIG. 2, the distance between the light receiving surface of the light receiving device fixed to the probe card and the light emitting element on the wafer to be measured is about 1 mm. This distance can be obtained by aligning the tip of the probe with the electrode pad of the light emitting element.
The distance is automatically determined, and considering the performance of a normal prober and the size of a light emitting element, the error is ± 0.
It is within 1 mm. Also, as is clear from this figure,
The state of the light emitting element and the state of alignment between the light emitting element and the tip of the probe can be observed with a stereoscopic microscope installed directly above the element. Therefore, it is clear that the element state can be observed during alignment work of a manual prober or semi-auto prober or during measurement of a full auto prober.

[Embodiment 2] FIG. 3 is an explanatory view of the vicinity of a light receiving device of a wafer prober device for a light emitting device showing an embodiment of claim 2. In the present embodiment, the light receiving device fixed to the probe card holds a photodiode and a preamplifier for voltage-converting and amplifying a current obtained by photo-current converting the light from the received light emitting element by the photodiode, and holding the photodiode and the preamplifier. It consists of an envelope that can be fixed in place on the probe card. The amplified optical output signal from the preamplifier is sent to the optical characteristic tester for measurement and processing.

The distance between the light receiving surface of the photodiode (the shaded portion in the photodiode in the figure) and the light emitting element is about 1 mm. As a result, even a photodiode having a small light receiving area can obtain a sufficient photocurrent. Further, in the light receiving device having the configuration as in the present embodiment, the range of light incident on the light receiving surface of the light receiving element in the light emitted from the light emitting portion of the light emitting element is defined as the light receiving surface of the light receiving device with respect to the light emitting portion of the light emitting element. It is obvious that it is easy to measure the light of any angle component of the light emitted from the light emitting element by appropriately setting the positional relationship between the light receiving surface and the light emitting element. Thereby, it is possible to measure a specific light distribution component such as a light emitting element having a distribution of emission angles of emitted light, for example, a communication LED or a laser element.

[Embodiment 3] FIG. 4 is an explanatory view of a wafer prober device for a light emitting device showing an embodiment of the present invention. In the wafer prober device for a light emitting device shown in FIG. 4, the light receiving device is composed of an optical fiber whose tip is fixed to the probe card and a photodiode connected to the opposite end of the optical fiber. The vicinity of the tip of the optical fiber on the side fixed to the probe card is adjusted and fixed by a fixing jig so that the tip of the fiber can receive light from the light emitting element. The tip portion of this optical fiber becomes the light receiving surface of the present light receiving device. FIG. 5 is an enlarged view of the vicinity of the light receiving surface of this embodiment.

In this way, the tip (light-receiving surface) of the optical fiber is fixed to the probe card by the fixing jig, and the opening surface (light-receiving surface) of the fiber tip is the light-emitting portion of the light-emitting element at the tip of the probe of the probe card. At least a part of the angle formed by the light forming the full-angle half-angle of the far-field pattern of the light emitted from the light emitting portion at a position that does not block the light flux emitted more perpendicularly to the wafer and the normal line of the opening surface of the optical fiber, It is fixed so that it falls within the range of the light receiving angle of the optical fiber obtained from the numerical aperture of the optical fiber at the wavelength of the light emitted from the light emitting section. The distance between the light receiving surface at the tip of the fiber and the light emitting element is maintained at about 0.5 mm.

By adopting such a structure, it is not necessary to provide a photodiode or a preamplifier for performing light-to-current conversion in the vicinity of the probe for measuring the electrical characteristics, so that mutual electrical influence (noise) occurs. Is eliminated, and the accuracy of measurement of both electrical characteristics and optical characteristics can be improved. Further, as is generally known, the optical fiber has a relatively narrow aperture angle of the input light,
With the light receiving device having this configuration, light from the light emitting element is mainly received, and noise light such as ambient light can be prevented from being received as much as possible. Therefore, it is possible to measure the light output of the light emitting element with high accuracy. . Further, it is apparent that the light receiving device of the present embodiment can selectively measure the light from the light emitting element at a narrower angle than the light receiving device of the second embodiment.

[Embodiment 4] FIG. 6 is an explanatory view of the vicinity of a light receiving device of a wafer prober device for a light emitting device showing an embodiment of claim 4. The light receiving device of this embodiment is composed of a photodiode connected to the end of the fiber plate fixed to the probe card by a fixing jig on the side opposite to the light emitting element. Since the light-receiving surface of the light-receiving device of this embodiment uses the end of the fiber plate on the light-emitting element side, the light-receiving device of this embodiment can have a large-area light-receiving surface. In addition, the fiber plate is used in Example 3.
Since it has a relatively narrow aperture angle of the input light like the optical fiber in, it is clear that the measurement can be performed with less influence of the ambient light noise. Therefore, the wafer prober for the light emitting element using the light receiving device of this embodiment is particularly suitable for the measurement of the LED wafer for display having a large area of the light emitting portion.

[Embodiment 5] FIG. 7 is an explanatory view of the vicinity of a light receiving device of a wafer prober device for a light emitting device showing an embodiment of claim 5. The light receiving device of this embodiment is composed of a SELFOC lens array (SLA) fixed to a probe card by a fixing jig and a photodiode connected to the end of the SLA opposite to the light emitting element. A wafer prober for a light emitting element using the light receiving device of this embodiment is particularly suitable for a wafer prober for an array light emitting element. The array light emitting element is a long element in which several tens of light emitting portions are generally integrated into one element and the length in the integration direction is several mm. Therefore, it is general to use a long light receiving element also on the light receiving side. The case where the light emitted from the light emitting diode array element is measured by the long photodiode element will be described below.

As shown in FIG. 8, when the light emitted from the light emitting diode array is measured by a long photodiode, when the photodiode and the light emitting diode array are approximately equal in length, the light emission near the center of the light emitting diode array. The incident angle of the light incident on the photodiode differs between the light from the light emitting section and the light from the light emitting section near the edge, and even if the light output of the light emitting section in the array is uniform, the light output from the light emitting section in the array is more The light emitting section near the section has a low light output. Therefore, when measuring the emitted light of such a light emitting diode array with a photodiode, the length of the photodiode must be longer than the length of the light emitting diode array. It was more than twice the length of. However, increasing the length of the photodiode in this way, that is, increasing the light-receiving area of the photodiode, causes an increase in the dark current of the photodiode and an increase in the influence of disturbance noise light, which causes a decrease in measurement accuracy. It was.

Therefore, as shown in FIG. 9, when the SLA is installed in front of the photodiode and only the light incident on the SLA is made incident light of the photodiode as in this embodiment, the SLA is compared. Narrow aperture angle (SLA-2
Therefore, if the distance between the light receiving surface and the light emitting element is 1 mm, then a photodiode having a length of about 0.4 mm on both sides may be used. This is because when measuring a light-emitting diode array having a length of 4 mm, a photodiode having a length of 8 mm or more is required unless SLA is used.
If LA is used, a photodiode having a length of about 5 mm will suffice. Therefore, if the width of the photodiode is the same, the area of the photodiode is 60 if SLA is used.
%, And the error due to noise becomes smaller.

FIG. 10 shows an example of measurement results using the wafer prober according to this embodiment. The measurement conditions are a light emitting diode array length of about 4 mm, and light emitting dots are 64 dots /
The dimensions of the element and the photodiode are about 5 mm × about 1 mm on the light receiving surface, and the distance between the light emitting diode array and the light receiving surface is about 1 mm using SLA-20. As can be seen from FIG. 10, the measured value was such that the optical output of 64 dots in one element was within 1%. FIG. 11 shows a case where the light emitting diode array and the photodiodes similar to those in FIG. 10 are used and SLA is not used. In this case, the distance between the light emitting diode array and the light receiving surface of the photodiode was set to 1 mm. Figure 11
As can be seen from the above, the distribution was seen within 64 dots in one element, and the measurement result was obtained that the light output decreased as it approached the end. These LED arrays perform element separation after the main measurement, and then measure the optical output of each dot in the element in detail for each dot. From the measurement results, the variation in the optical output within the element is within 1%. Have confirmed that. From this, it was proved that by using the wafer prober for a light emitting device of this example, the measurement of the light emitting diode array wafer could be performed accurately, at high speed and easily.

[Embodiment 6] FIG. 12 is an explanatory view of the vicinity of a light receiving device of a wafer prober device for a light emitting device showing an embodiment of claim 6. The light receiving device of this embodiment is composed of a roof mirror lens array (RMLA) fixed to a probe card by a fixing jig and a photodiode connected to the end of the RMLA opposite to the light emitting element. R
Since the MLA is an array optical system having a relatively narrow aperture angle of incident light similarly to the SLA, the wafer prober for light emitting device using the light receiving device of this embodiment is particularly for array light emitting devices as in the fifth embodiment. Suitable for wafer prober. Also, since the RMLA has an optical path separation mirror in its unit, it is possible to control the optical paths of the incident light and the output light by designing the optical path separation mirror appropriately. It has the feature that it can be designed freely.

[Embodiment 7] FIG. 13 is an explanatory view of the vicinity of a light receiving device of a wafer prober device for a light emitting device showing an embodiment of claim 7. The light receiving device of this embodiment is composed of a reflecting mirror fixed to the probe card by a fixing jig and a photodiode installed at a position where the light emitting element is seen through the reflecting mirror. The light receiving device used in this embodiment is
By opening a wide opening in the probe card to secure the optical path between the reflecting mirror and the photodiode, the reflecting mirror is fixed to the probe card in advance with a fixing jig, and the position of the photodiode is fixed. The feature is that the position of the probe card and the photodiode can be easily adjusted simply by moving the probe card on the probe card.

[Embodiment 8] FIG. 14 is an explanatory view of the vicinity of a light receiving device of a wafer prober device for a light emitting device showing an embodiment of claim 8. The light receiving device of this embodiment is composed of a prism fixed to the probe card and a photodiode installed at a position looking through the light emitting element through the prism. The light receiving device used in this example has a large opening for securing an optical path between the prism and the photodiode provided on the probe card, so that the prism is fixed to the probe card in advance by a fixing jig. In addition, the feature is that the position of the probe card and the photodiode can be easily adjusted only by moving the position of the photodiode on the probe card. Further, since the prism can be directly bonded to the probe card without using a special fixing jig for fixing the prism and the probe card, the structure of the light receiving device can be simplified.

[Embodiment 9] FIG. 15 is a plan view showing the vicinity of a probe of a probe card of a wafer prober device for a light emitting device showing an embodiment of the present invention. In this embodiment, as shown in FIG. 15, the light receiving devices 1, 2,
3 and 4 are arranged at positions rotated by 90 degrees. Since the position of the light emitting element is almost the same as the position of the tip of the probe, each light receiving device 1, 2, 3, 4 measures the light emission of the light emitting element from the four directions at the same distance from the light emitting element. Such a configuration of the light receiving device requires a very large light receiving mechanism in the conventional method for the wafer prober for light emitting elements, and thus is very difficult to realize. However, by using the wafer prober of this embodiment, it is possible to measure the light emission distribution of the light emitting element at a high speed in a wafer state.

[Embodiment 10] Next, a method of selecting a light emitting element of a semiconductor inspection apparatus according to claim 10 will be described. Table 1 shows a part of the measurement result of the light emitting device wafer measured using the wafer prober for the light emitting device in Example 9. Since four light receiving devices are mounted in the ninth embodiment,
The light output obtained from each light receiving device 1, 2, 3, 4 is L1, L
2, L3, L4. Further, the value of the light output ratio is corrected in advance for the influence of the shadow of the probe due to the measuring direction.

[0035]

[Table 1]

From these results, it is judged that the elements A, C and E have no abnormal light emission state, and the elements B, D and F have some light emission abnormality. FIG. 16 is a schematic view showing the states of the elements B, D and F. FIG.
(A) is the state of the element B, but the reason why the light output of L2 is smaller than the others is that dust like particles that may have adhered during the process near the direction of the light receiving device 2 are at the position shown in the figure. confirmed. FIG. 16B shows the state of the element D. As a cause of the light output of L1 being smaller than the others, it was confirmed that the electrode of the light emitting portion was turned up in the vicinity of the light receiving device 1. FIG. 16 (c)
Is the state of the element F, but the reason why the light output of L3 is smaller than the others is that dust like dust that seems to have adhered during the process near the direction of the light receiving device 3 was confirmed at the position shown in the figure. . In this way, by installing a plurality of light receiving devices, taking the ratio of the light output values, comparing the value with a preset value and using it for the determination of the light output of the element, It is possible to easily identify a defective element such as a foreign substance or an abnormal electrode formation. By comparing such a light output ratio with a preset range of the light output ratio that can be taken by a normal element, it becomes possible to accurately and accurately judge whether the element is good or bad.

[0037]

As described above, according to the present invention,
It is possible to improve the positional accuracy of the light receiving surface of the light receiving device of the wafer prober device for the light emitting device, and to reduce the distance between the light receiving device and the light emitting device, thereby achieving downsizing, noise reduction, and high reliability of the light receiving device. As a result, it becomes possible to increase the reliability and reduce the cost of the wafer selection process for light emitting devices. In addition, it has become possible to achieve high accuracy in selection of causes of defects and selection of array elements, which are difficult with conventional devices.

[Brief description of drawings]

FIG. 1 is an explanatory view of a wafer prober device for a light emitting device showing an embodiment of claim 1. FIG.

FIG. 2 is an enlarged view of the vicinity of a light receiving device of the wafer prober device for a light emitting element of the embodiment according to claim 1 shown in FIG.

FIG. 3 is an explanatory diagram of the vicinity of a light receiving device of a wafer prober device for a light emitting element showing an embodiment of claim 2;

FIG. 4 is an explanatory view of a wafer prober device for a light emitting device showing an embodiment of claim 3;

5 is an enlarged view of the vicinity of the light receiving surface of the light receiving device of the embodiment according to claim 3 shown in FIG.

FIG. 6 is an explanatory diagram of the vicinity of a light receiving device of a wafer prober device for a light emitting element showing an embodiment of claim 4;

FIG. 7 is an explanatory diagram around a light receiving device of a wafer prober device for a light emitting device showing an embodiment of claim 5;

FIG. 8 is a diagram showing an example of a light receiving device according to the prior art with respect to an embodiment according to claim 5;

FIG. 9 is a principle view of a light receiving device of an embodiment according to claim 5.

FIG. 10 is a diagram showing an example of measurement results using the wafer prober of the embodiment according to claim 5;

FIG. 11 is a diagram showing an example of measurement results using a wafer prober according to a conventional technique.

FIG. 12 is an explanatory diagram of the vicinity of a light receiving device of a wafer prober device for a light emitting element showing an embodiment of claim 6;

FIG. 13 is an explanatory view of the vicinity of a light receiving device of a wafer prober device for a light emitting device showing an embodiment of claim 7;

FIG. 14 is an explanatory diagram around a light receiving device of a wafer prober device for a light emitting element showing an embodiment of claim 8;

FIG. 15 is a plan view of the vicinity of the probe of the probe card of the wafer prober device for a light emitting device showing the embodiment of claim 9;

FIG. 16 is a schematic view showing a state of the light emitting device measured by the measuring method of the example according to claim 10.

FIG. 17 is an explanatory diagram of a wafer prober device according to a conventional technique.

FIG. 18 is an explanatory diagram of the operation of the wafer prober device according to the conventional technique.

FIG. 19 is an enlarged explanatory diagram around a light emitting element and a probe of a wafer prober device according to a conventional technique.

[Explanation of symbols]

Claims (10)

[Claims] 1. A light emitting semiconductor element (hereinafter referred to as a light emitting element)
In a semiconductor inspection device comprising a wafer prober device for a light emitting element, which is provided with a probe card for performing voltage application, current supply, voltage measurement and current measurement, and a light receiving device for measuring light intensity, a light receiving surface of the light receiving device. Is fixed at a predetermined position with respect to the probe card, and the light-receiving surface of the light-receiving device is installed in a position that does not block the light beam emitted perpendicularly to the wafer from the light-emitting part of the device under test on the wafer. Semiconductor inspection equipment characterized by. 2. The semiconductor inspection apparatus according to claim 1, wherein the light receiving device of the wafer prober device for light emitting elements is composed of at least a photodiode. 3. The semiconductor inspection apparatus according to claim 1, wherein the light receiving device of the wafer prober device for light emitting elements is composed of at least an optical fiber and a photodiode. 4. The semiconductor inspection apparatus according to claim 1, wherein the light receiving device of the wafer prober device for light emitting elements is composed of at least a fiber plate and a photodiode. 5. The light-receiving device of the wafer prober device for light-emitting elements is at least a SELFOC lens array (SL).
2. The semiconductor inspection apparatus according to claim 1, which is composed of A) and a photodiode. 6. A light receiving device of the wafer prober device for light emitting device is at least a roof mirror lens array (RML).
2. The semiconductor inspection apparatus according to claim 1, which is composed of A) and a photodiode. 7. The semiconductor inspection apparatus according to claim 1, wherein the light receiving device of the wafer prober device for light emitting elements is composed of at least a reflecting mirror and a photodiode. 8. The semiconductor inspection apparatus according to claim 1, wherein the light receiving device of the wafer prober device for light emitting elements is composed of at least a prism and a photodiode. 9. The semiconductor inspection apparatus according to claim 1,
A semiconductor inspection device, wherein at least two light-receiving devices are fixed to a probe card of a wafer prober device for light-emitting elements. 10. The semiconductor inspection apparatus according to claim 9, wherein a light output value (L1) obtained from the light receiving device 1 and a light receiving device 2 are used as a method of selecting light emitting elements using the wafer prober device for light emitting elements. Obtained light output value (L2), ...
.. Optical output value (Ln) obtained from the light receiving device n (n = 1, 2, ...,
n: n integer), the ratio (L2 / L1), ..., (Ln / L1) is taken, and the value is compared with a preset value and used for the determination of the light output of the light emitting element. Semiconductor inspection equipment.