JPH07183383A - Semiconductor integrated circuit device - Google Patents

Abstract

PURPOSE:To obtain a semiconductor integrated circuit device in which the functional block is not effected adversely by a through wiring from the outside formed in the function block. CONSTITUTION:A through wiring is split, between branch points N1 and N2, into through wirings 11, 12 having parallel positional relationship. The through wiring 11 is inserted with inverters 21, 22 in the vicinity of the branch points N1, N2 whereas the through wiring 12 is inserted with buffers 23, 24 in the vicinity of the branch points N1, N2. The main part 11A of the through wiring 11 between the inverters 21, 22 (where a first signal is propagated) and the main part 12a of the through wiring 12 between the butters 23, 24 (where a second signal, i.e., a logical inversion of the first signal, is propagated) intersect a small amplitude wiring 6.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention
The present invention relates to a semiconductor integrated circuit device in which two functional blocks are formed, and more particularly to a semiconductor integrated circuit device having a passing wiring that passes from outside the functional block to inside the functional block.

[0002]

2. Description of the Related Art FIG. 8 is a schematic diagram showing an example of the configuration of a semiconductor integrated circuit device composed of large-scale functional blocks such as memories and functional blocks formed on the same semiconductor chip.

In the figure, 1 is a large-scale functional block such as a memory, 2 and 3 are functional blocks such as an adder and a decoder adjacent to the large-scale functional block 1, 4 is an electrical connection between the functional blocks 2 and 3. It is a passage wiring that passes through the large-scale functional block 1 for connection.

As shown in FIG. 8, when a semiconductor integrated circuit device is formed, a small-amplitude signal wiring causing a minute potential change in the large-scale functional block 1, for example, a bit when the large-scale functional block 1 is a RAM. When there is a line or the like, a change in the signal of the passing wiring 4 adversely affects the signal wiring having a small amplitude, which may cause a change in the delay of the reading time and may cause other functional blocks that receive the read data to malfunction. is there. Furthermore, in the worst case, a problem occurs such that the read operation itself malfunctions.

Therefore, in the conventional semiconductor integrated circuit device, as shown in FIG. 9, when the large-scale functional block 1 exists between the functional blocks 2 and 3, the large-scale functional block 1 is not passed and the large-scale functional block 1 is not passed. The detour wiring 5 arranged around the functional block 1 is formed to electrically connect the functional blocks 2 and 3. Thus, when the semiconductor integrated circuit device is formed, even if the signal wiring in the large-scale functional block 1 is a signal wiring having a small amplitude, it is not adversely affected.

[0006]

The conventional semiconductor integrated circuit device is constructed as described above, and in the conventional wiring system, as shown in FIG. 9, the signal wiring inside the large-scale functional block 1 has a bad influence. Since the signal wiring between the other two functional blocks sandwiching one functional block bypasses the sandwiched functional block so as not to receive it, the wiring length of the signal wiring provided between the functional blocks is long. Therefore, there is a problem that the delay time increases and the wiring becomes complicated.

The present invention has been made to solve the above problems, and a semiconductor which does not adversely affect the inside of a functional block even if a passing wiring from outside the functional block is formed inside the functional block. An object is to obtain an integrated circuit device.

[0008]

A semiconductor integrated circuit device according to a first aspect of the present invention has a small-amplitude wiring which is a signal wiring in which a minute potential change occurs during operation, and realizes a predetermined logical function. At least one functional block is formed in a wiring layer different from the small-amplitude wiring in the functional block, crosses the small-amplitude wiring without passing through the functional block, and passes outside the functional block. A device provided with a passing wire used for physical connection and propagating a current from one end to the other end, wherein the passing wire is divided at a first branch point on the one end side, and the other end side is provided. Of the first and second split-pass wirings, which are coupled at the second branch point of and propagate the first and second signals, respectively,
The first and second split-passage wires are arranged such that the first and second main parts, which are the main parts, are arranged in a parallel positional relationship, and the first and second main parts are the small-amplitude wires. The first and second signals have a logically inverted relationship in the vicinity of a region intersecting with, and the first and second signals are provided so as to coincide with each other by the second branch point.

A semiconductor integrated circuit device according to a second aspect of the present invention has a small-amplitude wiring which is a signal wiring in which a minute potential change occurs during operation, and at least one functional block for realizing a predetermined logic function. Formed in a wiring layer different from the small-amplitude wiring in the functional block, disposed adjacent to the small-amplitude wiring with a predetermined distance, passing through the functional block, and electrically connected outside the functional block. A semiconductor integrated circuit device having a passage wiring that propagates a current from one end to the other end, wherein the passage wiring is divided at the first branch point on the one end side,
The first and second divided pass wirings are coupled at the second branch point on the other end side and propagate the first and second signals, respectively, and the first and second divided pass wirings are , The first and second main parts, which are respective main parts, are arranged in the functional block so that the plane positions thereof coincide with each other in different wiring layers, and the first and second main parts correspond to the small-amplitude wiring. The first and second signals have a logically inverted relationship at a position adjacent to each other with a predetermined space therebetween, and the first and second signals are provided by the second branch point.
Are provided so that the signals of are matched.

[0010]

According to the first aspect of the present invention, the first and second divided passage wirings of the passage wiring of the semiconductor integrated circuit device according to the present invention have a positional relationship in which the first and second principal portions, which are respective principal portions, are parallel to each other. In the vicinity of the area where the first and second main parts intersect with the small-amplitude wiring, the first and second signals have a logical inversion relationship, so 1st part gives to small amplitude wiring
And the second effect of the second main portion of the second split-passage wiring on the small-amplitude wiring work so as to cancel each other out.

According to the second aspect of the present invention, in the first and second divided passage wirings of the passage wiring of the semiconductor integrated circuit device, the first and second principal portions, which are the respective principal portions, are mutually located in the functional block. The first and second signals are logically inverted at the positions where the plane positions are aligned in different wiring layers and the first and second main portions are adjacent to the small-amplitude wiring at a predetermined distance. Because of the relationship, the first influence of the first main portion of the first divided-pass wiring on the small-amplitude wiring and the second influence of the second main portion of the second divided-pass wiring on the small-amplitude wiring. And work to cancel each other.

[0012]

【Example】

<First Embodiment> FIG. 1 is a schematic diagram showing the structure of a semiconductor integrated circuit device according to a first embodiment of the present invention. As shown in the figure, since the functional blocks 2 and 3 are electrically connected, a large-scale functional block 1 between the functional blocks 2 and 3 is provided.
Passing wiring 10 is formed by passing through.

The passage wiring 10 is a wiring for propagating a signal from the functional block 3 side to the functional block 2 side, and in the large-scale functional block 1, the divided passage wiring 11 and the divided passage wiring 12 are provided at a branch point N1. The divided pass wiring 11 and the divided pass wiring 12 are connected at the branch point N2. The divided passing wiring 11 and the divided passing wiring 12 are formed in the same wiring layer and are provided in parallel with each other. It is desirable that the distance between the split passage wirings 11 and 12 be as narrow as possible within the range allowed by the design.

Then, as shown in FIG. 2, the amplitude of the bit line or the like of the SRAM existing in the large-scale functional block 1 is small (a minute potential change occurs during a predetermined period during operation).
The split-passage wiring 11 and the split-passage wiring 12 are formed in different wiring layers with respect to the small-amplitude wiring 6, which is a wiring, and the main portions 11A and 12B thereof are provided perpendicularly intersecting without contacting the small-amplitude wiring 6.

Further, the divisional passing wiring 11 and the divisional passing wiring 12 are formed by using the same wiring material so as to be located in the same wiring layer, and have the same wiring width.

The split passage wiring 11 has an inverter 21 near the branch point N1 and an inverter 2 near the branch point N2.
2, the split pass-through wiring 12 has a buffer 23 near the branch point N1 and a buffer 24 near the branch point N2. Then, the main portion 11A between the inverters 21 and 22 of the divided passage wiring 11 and the divided passage wiring 12
The main portion 11A is located between the buffers 23 and 24 of the.

Therefore, the first and second signals propagating through the main portions 11A and 12A of the divisional pass wirings 11 and 12 have a signal relationship that is logically inverted. In addition,
The inverters 21 and 22 and the buffers 23 and 24 are set to have the same driving capability and signal propagation delay time.

In such a configuration, the split passage wiring 1
The main portion 11A of No. 1 crosses the small-amplitude wiring 6 vertically and forms a parasitic capacitance with the small-amplitude wiring 6 so as to give a first influence. On the other hand, the main portion 1 of the split passage wiring 12
2A also tries to exert a second influence by forming a parasitic capacitance between the small-amplitude wiring 6 and the small-amplitude wiring 6 perpendicularly.

At this time, the main portions 11A and 12A of the divided passage wiring 11 and the divided passage wiring 12 are small-amplitude wiring 6
Since the first and second signals having the inversion relation to each other are propagated at the intersection with and, the second influence acts in the direction of canceling the first influence, and the influence on the small-amplitude wiring 6 can be offset. .

Then, the inverter 21 and the buffer 23
By setting the driving ability and the signal propagation delay time of the same, the formation material of the division passage wiring 11 and the division passage wiring 12 and the wiring width to be the same, respectively, the first influence and the second influence are at the same level. Therefore, as a result, the small-amplitude wiring 6 is hardly affected by the main portions 11A and 12A of the split passage wiring 11 and the split passage wiring 12.

Further, since the first signal on the split passage wiring 11 is further inverted by the inverter 22, the first signal of the division passage wiring 11 and the second signal of the division passage wiring 12 are reached before reaching the branch point N2. Since the signal of 1 is returned to the same value, there is no problem in the signal propagation of the passage wiring 10.

As described above, the semiconductor integrated circuit device of the first embodiment is large-scaled by arranging the divided passage wiring 11 and the divided passage wiring 12 in the small-amplitude wiring 6 so as to cancel the influence of each other. The passage wiring 10 can be formed in the large-scale functional block 1 without adversely affecting the functional block 1.

The necessary minimum condition for obtaining the above effect is that the first and second main portions 11A and 12A are arranged in a positional relationship parallel to each other (not necessarily formed in the same wiring layer). First and second main parts 11A and 12A
The first and second signals are logically inverted in the vicinity of the region intersecting with the small-amplitude wiring 6, and the first and second signals are provided so as to coincide with each other by the branch point N2.

In the first embodiment, the branch point N1, the branch point N2, the inverters 21 and 22, the buffer 23 and the buffer 24 are formed in the large-scale functional block 1, but shown in FIG. Thus, it may be formed outside the large-scale functional block 1.

<Second Embodiment> FIG. 4 is a schematic view showing a semiconductor integrated circuit device according to a second embodiment of the present invention. As shown in the figure, since the functional blocks 2 and 3 are electrically connected, the passage wiring 30 is formed through the large-scale functional block 1 located between the functional blocks 2 and 3.

The passage wiring 30 is a wiring for propagating a signal from the functional block 3 side to the functional block 2 side, and in the large-scale functional block 1, at the branch point N3, the divided passage wiring 31 and the divided passage wiring 32 are provided. And the split passage wiring 31 and the split passage wiring 32 are connected at a branch point N4.

As shown in FIG. 5, the main parts 31A and 32B of the divisional passing wiring 31 and the divisional passing wiring 32 are parallel to the small-amplitude wiring 6 such as the bit line of SRAM in the large-scale functional block 1. It can be seen that they are formed in different wiring layers such that they are provided on the same wiring board, and their planar positions match each other.

FIG. 6 is a sectional view showing the II section of FIG. As shown in the figure, the main portions 31A and 32A of the split passage wiring 31 and the division passage wiring 32 are formed in different layers. Reference numeral 33 is an interlayer insulating film.

Further, the divisional passing wiring 31 and the divisional passing wiring 32 are formed by using the same wiring material, and their wiring widths are set to be the same.

The split passage wiring 31 has the inverter 21 near the branch point N3 and the inverter 2 near the branch point N4.
2 is inserted, and the split passage wiring 32 inserts the buffer 23 near the branch point N3 and the buffer 24 near the branch point N4. The main portion 31A between the inverters 21 and 22 of the divided passage wiring 31 and the divided passage wiring 32
The main portion 32A is located between the buffers 23 and 24 of the.

Therefore, the first and second signals propagating through the main portions 31A and 32A of the divisional passing wirings 31 and 32 have a signal relationship that is logically inverted. In addition,
The inverters 21 and 22 and the buffers 23 and 24 are set to have the same driving capability and signal propagation delay time.

In such a configuration, the split passage wiring 3
The first main portion 31A tries to exert a first effect by forming a parasitic capacitance between the main portion 31A and the small-amplitude wiring 6 formed adjacently in parallel. On the other hand, the main portion 32A of the split passage wiring 32 is also
A parasitic capacitance is formed between the small-amplitude wiring 6 and the small-amplitude wiring 6 which are adjacent to each other in parallel, so that the second influence is exerted.

At this time, the main portions 31A and 32A of the divisional passing wiring 31 and the divisional passing wiring 32 are small-amplitude wiring 6
Since the first and second signals that are logically inverted in relation to each other are propagated in the portions that are parallel to and adjacent to each other, the second influence acts in a direction to cancel the first influence, and the influence on the small-amplitude wiring 6. Can be offset.

Then, the inverter 21 and the buffer 23
By setting the driving ability and the signal propagation delay time of the same, the formation material of the division passage wiring 11 and the division passage wiring 12 and the wiring width to be the same, respectively, the first influence and the second influence are at the same level. Therefore, as a result, the small-amplitude wiring 6 is divided into the main portions 31A and 3 of the split passage wiring 31 and the division passage wiring 32.
Little affected by 2A.

Further, since the first signal on the split passage wiring 31 is further inverted by the inverter 22, the first signal of the division passage wiring 31 and the second signal of the division passage wiring 32 are reached before reaching the branch point N2. Since it is returned to the same value as the signal of No. 1, there is no problem in the signal propagation of the passage wiring 30.

As described above, the semiconductor integrated circuit device of the second embodiment has a large scale by arranging the divisional passing wiring 31 and the divisional passing wiring 32 in the small-amplitude wiring 6 so as to cancel the influence of each other. The passage wiring 30 can be formed in the large-scale functional block 1 without adversely affecting the functional block 1.

The minimum necessary condition for obtaining the above effect is that the first and second main portions 31A and 32A are arranged in the large-scale functional block 1 so that their plane positions are the same in different wiring layers. First and second main part 3
The first and second signals are logically inverted at a location where 1A and 32A are arranged adjacent to the small-amplitude wiring 6 with a predetermined space therebetween, and the first and second signals are provided by the branch point N4.
The signals are to be provided so as to coincide with each other.

In the second embodiment, the branch point N1, the branch point N2, the inverters 21 and 22, the buffer 23, and the buffer 24 are formed in the large-scale functional block 1 as shown in FIG. Thus, it may be formed outside the large-scale functional block 1.

[0039]

As described above, the first and second divided pass-through wirings in the pass-through wiring of the semiconductor integrated circuit device according to the first aspect of the present invention are the first and the second divided pass-through wirings, respectively. The first and second signals are logically inverted in the vicinity of the area where the main parts are arranged in parallel with each other and the first and second main parts intersect with the small-amplitude wiring. The first effect of the main portion on the small-amplitude wiring and the second effect of the second main portion on the small-amplitude wiring work to cancel each other, and the small-amplitude wiring is separated from the first and second split-pass wirings. It is possible to significantly reduce the influence.

Further, since the first and second divided passage wirings are provided so that the first and second signals coincide with each other by the second branch point, the signal propagation through the passage wirings may be hindered. Absent.

As a result, it is possible to obtain a semiconductor integrated circuit device that does not adversely affect the inside of the functional block even if the passing wiring from outside the functional block is formed inside the functional block.

According to the second aspect of the present invention, the first and second divided pass-through wirings of the pass-through wiring of the semiconductor integrated circuit device according to the present invention are such that the first and second main portions, which are the main portions, are mutually located in the functional block. The first and second signals are logically inverted at the positions where the plane positions are aligned in different wiring layers and the first and second main portions are adjacent to the small-amplitude wiring at a predetermined distance. As a result of the relationship, the first influence exerted on the small-amplitude wiring by the first main portion and the second influence exerted on the small-amplitude wiring by the second main portion act to cancel each other, and the small-amplitude wiring is Also, the influence of the second divided-passage wiring can be significantly reduced.

Further, since the first and second split-passage wirings are provided so that the first and second signals coincide with each other by the second branch point, the signal propagation through the passage wirings may be hindered. Absent.

As a result, it is possible to obtain a semiconductor integrated circuit device that does not adversely affect the inside of the functional block even if the passing wiring from outside the functional block is formed inside the functional block.

[Brief description of drawings]

FIG. 1 is a schematic diagram showing a semiconductor integrated circuit device according to a first embodiment of the present invention.

FIG. 2 is a schematic diagram showing the inside of a large-scale functional block of FIG.

FIG. 3 is a schematic view showing another aspect of the first embodiment.

FIG. 4 is a schematic diagram showing a semiconductor integrated circuit device according to a second embodiment of the present invention.

5 is a schematic diagram showing the inside of a large-scale functional block of FIG.

6 is a cross-sectional view showing the I-I cross section of FIG. 5;

FIG. 7 is a schematic view showing another aspect of the second embodiment.

FIG. 8 is a schematic diagram showing a conventional semiconductor integrated circuit device using a passing wiring.

FIG. 9 is a schematic diagram showing a conventional semiconductor integrated circuit device using bypass wiring.

[Explanation of symbols]

 1 Large-scale functional block 2 Functional block 3 Functional block 6 Small amplitude wiring 10 Passing wiring 11 Dividing passing wiring 12 Dividing passing wiring 21 Inverter 22 Inverter 23 Buffer 24 Buffer 30 Passing wiring 31 Dividing passing wiring 32 Dividing passing wiring

Claims (2)

[Claims] 1. At least one functional block having a small-amplitude wiring that is a signal wiring that causes a minute potential change during operation, and at least one functional block that realizes a predetermined logical function, and a wiring different from the small-amplitude wiring within the functional block. Pass-through wiring formed in a layer, crossing without passing through the small-amplitude wiring, passing through the inside of the functional block, used for electrical connection outside the functional block, and propagating a current from one end to the other end; In the semiconductor integrated circuit device, the passing wiring is divided at the first branch point on the one end side and is coupled at the second branch point on the other end side, and the first and second branch points are connected. First and second split-passage wirings for respectively propagating signals are provided, and the first and second split-passage wirings have a positional relationship in which first and second main portions, which are respective main portions, are parallel to each other. Placed in the above The first and second signals are logically inverted in the vicinity of a region where the first and second main parts intersect with the small-amplitude wiring, and the first and second signals are formed by the second branch point. A semiconductor integrated circuit device, wherein signals are provided so as to coincide with each other. 2. At least one functional block having a small-amplitude wiring that is a signal wiring that causes a minute potential change during operation, and at least one functional block that realizes a predetermined logic function, and a wiring different from the small-amplitude wiring within the functional block. Is formed in a layer, is arranged adjacent to the small-amplitude wiring at a predetermined distance, passes through the inside of the functional block, is used for electrical connection outside the functional block, and propagates a current from one end to the other end. A semiconductor integrated circuit device comprising: a first branch point on the one end side; a second branch point on the other end side; 1
And a second split passage wiring for propagating a second signal, respectively, and the first and second split passage wirings have first and second main portions which are main portions thereof. The first and second main portions are arranged in the functional block so that their planar positions are the same in different wiring layers, and the first and second main portions are arranged adjacent to the small-amplitude wiring at a predetermined distance. 2. A semiconductor integrated circuit device, wherein the two signals are logically inverted and are provided so that the first and second signals match by the second branch point.