JPH07173690A - Plating method - Google Patents

Plating method

Info

Publication number
JPH07173690A
JPH07173690A JP34403093A JP34403093A JPH07173690A JP H07173690 A JPH07173690 A JP H07173690A JP 34403093 A JP34403093 A JP 34403093A JP 34403093 A JP34403093 A JP 34403093A JP H07173690 A JPH07173690 A JP H07173690A
Authority
JP
Japan
Prior art keywords
plated
plating
cathode electrode
contact medium
barrel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP34403093A
Other languages
Japanese (ja)
Other versions
JP3087554B2 (en
Inventor
Kazuma Tanaka
一磨 田中
Kunihiko Hamada
邦彦 浜田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP05344030A priority Critical patent/JP3087554B2/en
Publication of JPH07173690A publication Critical patent/JPH07173690A/en
Application granted granted Critical
Publication of JP3087554B2 publication Critical patent/JP3087554B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PURPOSE:To provide a barrel plating method capable of surely forming plating films having a uniform thickness on objects to be plated by suppressing the deposition of plating films on cathode electrodes and catalyst medium. CONSTITUTION:The cathode electrodes and catalyst medium consisting of a metallic material on which the metal to be plated is hardly depositable in a plating stage are used as the cathode electrodes 2 and the catalyst medium 4 in the case of application of specific plating on the objects 3 to be plated by immersing the objects 3 to be plated in a plating liquid 7 and supplying current between the cathode electrodes 2 and anode electrodes 5 while continuously or intermittently conducting the objects 3 to be plated to the cathode electrodes 2. An aluminum or an aluminum alloy is used for the metallic material.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、メッキ方法に関し、
詳しくは、電子部品などの被メッキ物をメッキ液に浸漬
し、通電しながら被メッキ物にメッキ被膜を析出させる
電解メッキ方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plating method,
More specifically, the present invention relates to an electrolytic plating method in which an object to be plated such as an electronic component is immersed in a plating solution and a plating film is deposited on the object to be plated while energized.

【0002】[0002]

【従来の技術】電子部品などの被メッキ物にメッキを行
う際に用いられるメッキ方法の一つにバレルメッキ方法
がある。図3はこの従来のバレルメッキ方法の一例を示
す図である。
2. Description of the Related Art Barrel plating is one of the plating methods used for plating an object to be plated such as electronic parts. FIG. 3 is a diagram showing an example of this conventional barrel plating method.

【0003】このメッキ方法は、少なくとも一部がメッ
キ液を通過させる金網などの材料から構成され、内部に
銅からなる陰極電極22が配設されたバレル21内に、
電子部品(例えば積層セラミックコンデンサ)などの多
数の被メッキ物23と、被メッキ物23と陰極電極22
を導通させる接触媒体(例えば、銅製の小球)24を収
納した後、バレル21をメッキ槽26内のメッキ液27
中に浸漬し、陰極電極22とメッキ槽26内に配設され
た陽極電極25の間に通電しつつメッキ液27中でバレ
ル21を回転させ、被メッキ物23を陰極電極22、接
触媒体24及びメッキ液27に接触させることによりメ
ッキを行う方法である。
In this plating method, at least a part is made of a material such as a wire mesh that allows a plating solution to pass therethrough, and inside a barrel 21 in which a cathode electrode 22 made of copper is arranged,
A large number of objects to be plated 23 such as electronic parts (for example, laminated ceramic capacitors), objects to be plated 23 and cathode electrodes 22
After containing a contact medium 24 (for example, a small sphere made of copper) which conducts electricity, the barrel 21 is placed in a plating solution 27 in a plating tank 26.
The barrel 21 is rotated in the plating solution 27 while being energized between the cathode electrode 22 and the anode electrode 25 arranged in the plating tank 26, and the object to be plated 23 is placed on the cathode electrode 22 and the contact medium 24. And a method of performing plating by contacting with the plating solution 27.

【0004】なお、上記のメッキ方法においては、被メ
ッキ物23が小型で、そのままでは被メッキ物23と陰
極電極22を効率よく接触させることが困難であること
を考慮して、被メッキ物23とともに、被メッキ物23
と陰極電極22を導通させる接触媒体24をバレル21
に入れているが、このように、接触媒体24をバレル2
1に入れることにより、被メッキ物23のメッキを行う
べき部分(例えば積層セラミックコンデンサの外部電
極)23aと陰極電極22とを接触媒体24を介して確
実に導通させることが可能になり、被メッキ物23の所
定の部分(外部電極)23aに厚みの均一なメッキ被膜
を析出させることが可能になる。
In the above plating method, the object to be plated 23 is small, and it is difficult to contact the object to be plated 23 and the cathode electrode 22 efficiently as it is. With the object to be plated 23
The contact medium 24 for electrically connecting the cathode electrode 22 to the barrel 21
In this way, the contact medium 24 is placed in the barrel 2
By putting it in 1, it becomes possible to surely conduct the portion to be plated of the object to be plated 23 (for example, the external electrode of the multilayer ceramic capacitor) 23a and the cathode electrode 22 through the contact medium 24, and to be plated. It is possible to deposit a plating film having a uniform thickness on a predetermined portion (external electrode) 23a of the object 23.

【0005】なお、被メッキ物がそれほど小型でなく、
陰極電極との間に十分な接触が得られる場合には、接触
媒体を用いることなくメッキを行うことも可能である。
The object to be plated is not so small,
If sufficient contact can be obtained with the cathode electrode, it is also possible to carry out plating without using a contact medium.

【0006】[0006]

【発明が解決しようとする課題】しかし、上記従来のメ
ッキ方法においては、銅製の陰極電極22及び接触媒体
24が用いられており、メッキ工程において、その表面
に、被メッキ物23と同様にメッキ被膜が析出する。な
お、陰極電極22や接触媒体24に電流が集中しないよ
うな考慮が払われていない場合には、その表面に被メッ
キ物23に形成されるメッキ被膜よりも厚いメッキ被膜
が形成されてしまう場合がある。
However, in the above-described conventional plating method, the cathode electrode 22 and the contact medium 24 made of copper are used, and in the plating step, the surface thereof is plated in the same manner as the object 23 to be plated. A film is deposited. In the case where the current is not concentrated on the cathode electrode 22 and the contact medium 24, a plating film thicker than the plating film formed on the object to be plated 23 is formed on the surface thereof. There is.

【0007】さらに、一回のメッキ工程では陰極電極2
2や接触媒体24にそれほど厚いメッキ被膜が形成され
ない場合にも、繰り返して使用されるうちに、メッキ被
膜が厚くなり、陰極電極22や接触媒体24の形状が変
化して、被メッキ物23との接触状態が悪くなったり、
メッキ液27中の電流分布がロット間で不均一になった
りして製品のメッキ厚のばらつきを招くという問題点が
ある。
Further, in one plating step, the cathode electrode 2
2 and the contact medium 24, even if a thick plated film is not formed, the plated film becomes thicker and the shape of the cathode electrode 22 and the contact medium 24 changes during repeated use, and the plated object 23 and The contact condition of the
There is a problem in that the current distribution in the plating solution 27 becomes non-uniform among lots, leading to variations in the plating thickness of products.

【0008】なお、この問題点は、上記のように、銅か
らなる陰極電極や接触媒体を用いた場合に限らず、ステ
ンレススチールやニッケルなどからなる陰極電極や接触
媒体を用いた場合にも当てはまるものである。
This problem is not limited to the case where the cathode electrode or the contact medium made of copper is used as described above, but is applicable to the case where the cathode electrode or the contact medium made of stainless steel or nickel is used. It is a thing.

【0009】そこで、このような問題点を解決するため
に、定期的なメンテナンスや接触媒体の交換などを行っ
ているが、多数の製品ロットを処理するためには頻繁な
メンテナンスが必要で、メッキ処理設備の稼働率が悪く
なるという問題点がある。
Therefore, in order to solve such problems, periodical maintenance and contact medium replacement are carried out, but frequent maintenance is required to process a large number of product lots, and plating is required. There is a problem that the operating rate of the processing equipment deteriorates.

【0010】この発明は、上記問題点を解決するもので
あり、陰極電極や接触媒体にメッキ被膜が析出すること
を抑制して、被メッキ物に均一な厚みのメッキ被膜を確
実に形成することが可能なメッキ方法を提供することを
目的とする。
The present invention solves the above-mentioned problems, and suppresses the deposition of the plating film on the cathode electrode or the contact medium, and reliably forms the plating film of uniform thickness on the object to be plated. It is an object of the present invention to provide a plating method capable of

【0011】[0011]

【課題を解決するための手段】上記目的を達成するため
に、この発明のメッキ方法は、被メッキ物をメッキ液中
に浸漬し、被メッキ物を陰極電極に継続的または断続的
に接触させながら、陰極電極と陽極電極の間に通電する
ことにより、被メッキ物に所定のメッキ被膜を析出させ
るようにしたメッキ方法において、陰極電極として、メ
ッキ工程においてメッキすべき金属がその表面に析出し
にくい金属材料からなる陰極電極を用いることを特徴と
する。
In order to achieve the above object, the plating method of the present invention comprises immersing an object to be plated in a plating solution and contacting the object to be plated with a cathode electrode continuously or intermittently. However, in the plating method in which a predetermined plating film is deposited on the object to be plated by applying electricity between the cathode electrode and the anode electrode, the metal to be plated in the plating step is deposited on the surface as the cathode electrode. It is characterized by using a cathode electrode made of a difficult metal material.

【0012】また、内部に陰極電極を配設したバレル
に、被メッキ物を入れてメッキ液に浸漬し、メッキ液中
に配設された陽極電極と前記陰極電極との間に通電しな
がらバレルを回転させることにより、被メッキ物に所定
のメッキ被膜を析出させるようにしたことを特徴とす
る。
[0012] Further, the object to be plated is placed in a barrel having a cathode electrode inside and immersed in a plating solution, and the barrel is energized between the anode electrode and the cathode electrode provided in the plating solution. It is characterized in that a predetermined plating film is deposited on the object to be plated by rotating.

【0013】また、前記バレルに、被メッキ物ととも
に、メッキ工程においてメッキすべき金属がその表面に
析出しにくい金属材料からなる、被メッキ物と陰極電極
を導通させる接触媒体を入れることを特徴とする。
Further, the barrel is provided with a material to be plated and a contact medium for electrically connecting the material to be plated and the cathode electrode, which is made of a metal material in which a metal to be plated in the plating step is less likely to deposit. To do.

【0014】さらに、前記金属材料がアルミニウムまた
はアルミニウム合金であることを特徴とする。
Further, the metal material is aluminum or an aluminum alloy.

【0015】[0015]

【作用】この発明のメッキ方法は、陰極電極(及び被メ
ッキ物と陰極電極を導通させる接触媒体)を、メッキす
べき金属がその表面に析出しにくい金属材料から構成す
るようにしているので、陰極電極や接触媒体の形状に依
存したり、頻繁にメンテナンスを行ったりすることな
く、陰極電極や接触媒体にメッキ被膜が析出することに
起因する陰極電極や接触媒体と被メッキ物との接触状態
の悪化や、メッキ液中の電流分布がロット間で不均一に
なることを防止して、製品間におけるメッキ厚のばらつ
きを確実に抑制、防止することができるようになる。
According to the plating method of the present invention, the cathode electrode (and the contact medium for bringing the object to be plated and the cathode electrode into conduction) is made of a metal material in which the metal to be plated is less likely to deposit on the surface. The contact state between the cathode electrode or contact medium and the object to be plated due to the deposition of the plating film on the cathode electrode or contact medium without depending on the shape of the cathode electrode or contact medium or performing frequent maintenance. It is possible to prevent deterioration of the plating solution and non-uniformity of the current distribution in the plating solution between lots, and it is possible to reliably suppress and prevent variations in plating thickness between products.

【0016】また、陰極電極や接触媒体を構成する金属
材料として、アルミニウムまたはアルミニウム合金を用
いることにより、メッキすべき金属が陰極電極や接触媒
体の表面に析出することを確実に抑制することが可能に
なる。
Further, by using aluminum or an aluminum alloy as the metal material forming the cathode electrode or the contact medium, it is possible to reliably prevent the metal to be plated from depositing on the surface of the cathode electrode or the contact medium. become.

【0017】[0017]

【実施例】以下、この発明の実施例を図に基づいて説明
する。図1は、この発明の一実施例にかかるメッキ方法
を示す図である。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram showing a plating method according to an embodiment of the present invention.

【0018】なお、この実施例では、メッキ液7とし
て、メッキ金属であるSnを含むメッキ液(Sn浴)を
用い、被メッキ物である積層セラミックコンデンサ3の
両端側に形成された外部電極3a上にSnメッキを行う
場合を例にとって説明する。
In this embodiment, a plating solution (Sn bath) containing Sn which is a plating metal is used as the plating solution 7, and the external electrodes 3a formed on both ends of the laminated ceramic capacitor 3 which is the object to be plated. The case where Sn plating is performed will be described as an example.

【0019】この実施例において用いたバレル1は、少
なくとも一部がメッキ液を通過させる金網などの材料か
ら構成されており、絶縁被覆された導体2aの先端側に
取り付けられたアルミニウムからなる陰極電極2がその
内部に配設されている。
At least a part of the barrel 1 used in this embodiment is made of a material such as a wire mesh that allows a plating solution to pass therethrough, and the cathode electrode made of aluminum is attached to the tip end side of the conductor 2a having an insulation coating. 2 is disposed inside thereof.

【0020】そして、このバレル1内に、多数の積層セ
ラミックコンデンサ(被メッキ物)3とアルミニウムの
小球(接触媒体)4を収納した後、バレル1をメッキ槽
6内のメッキ液7中に浸漬し、陰極電極2とメッキ槽6
内に配設された陽極電極5の間に通電しつつメッキ液7
中でバレル1を回転させた。このようにして、積層セラ
ミックコンデンサ3の外部電極3aを陰極電極2、接触
媒体4及びメッキ液7と接触させることにより外部電極
3aにSnメッキを行った。なお、この実施例では、前
記のアルミニウムからなる陰極電極2及び接触媒体4と
して、例えば、表面に薄い酸化膜やアルマイト処理膜が
形成されたアルミニウムが用いられているが、これに限
られるものではない。
Then, after accommodating a large number of monolithic ceramic capacitors (objects to be plated) 3 and small balls of aluminum (contact medium) 4 in the barrel 1, the barrel 1 is placed in a plating solution 7 in a plating tank 6. Immerse, cathode electrode 2 and plating tank 6
The plating solution 7 is energized between the anode electrodes 5 disposed inside.
The barrel 1 was rotated inside. In this way, the external electrode 3a of the monolithic ceramic capacitor 3 was brought into contact with the cathode electrode 2, the contact medium 4 and the plating solution 7 to perform Sn plating on the external electrode 3a. In this example, as the cathode electrode 2 and the contact medium 4 made of aluminum, for example, aluminum having a thin oxide film or an alumite treatment film formed on the surface is used, but the present invention is not limited to this. Absent.

【0021】その結果、バレル1内のアルミニウムから
なる陰極電極2及び接触媒体4には、ほとんどSnメッ
キ被膜の析出は認められなかった。さらに、積層セラミ
ックコンデンサ3の外部電極3aへのメッキを繰り返し
て行った場合にも、陰極電極2及び接触媒体4へのSn
メッキ被膜の成長はわずかであった。
As a result, almost no Sn plating film was deposited on the cathode electrode 2 and the contact medium 4 made of aluminum in the barrel 1. Further, even when the external electrode 3a of the monolithic ceramic capacitor 3 is repeatedly plated, Sn on the cathode electrode 2 and the contact medium 4 is also removed.
The growth of the plated coating was slight.

【0022】したがって、陰極電極2や接触媒体4の形
状などに依存したり、頻繁にメンテナンスを行ったりす
ることなく、陰極電極2及び接触媒体4にSnメッキ被
膜が析出することを抑制し、陰極電極2や接触媒体4と
積層セラミックコンデンサ3との接触状態が悪くなった
り、メッキ液7中の電流分布がロット間で不均一になっ
たりすることを防止して、製品間におけるメッキ厚のば
らつきを確実に抑制、防止することができる。
Therefore, it is possible to suppress the deposition of the Sn plating film on the cathode electrode 2 and the contact medium 4 without depending on the shape of the cathode electrode 2 and the contact medium 4 or to perform frequent maintenance. It is possible to prevent the contact state between the electrode 2 or the contact medium 4 and the monolithic ceramic capacitor 3 from being deteriorated, or to prevent the current distribution in the plating solution 7 from becoming non-uniform between lots, thereby making it possible to disperse the plating thickness between products. Can be reliably suppressed and prevented.

【0023】なお、上記実施例では、接触媒体を用いた
場合について説明したが、被メッキ物がそれほど小型で
なく、陰極電極との間に十分な接触が得られる場合に
は、接触媒体を用いずに、アルミニウムからなる陰極電
極のみを用いて、被メッキ物に所望のメッキ被膜を形成
することができる。この場合にも、陰極電極上にメッキ
被膜が析出することを抑制して、上記実施例の場合と同
様の効果を得ることができる。
In the above embodiments, the case where the contact medium is used has been described. However, when the object to be plated is not so small and sufficient contact with the cathode electrode can be obtained, the contact medium is used. Instead, it is possible to form a desired plating film on the object to be plated using only the cathode electrode made of aluminum. Also in this case, it is possible to suppress the deposition of the plating film on the cathode electrode and obtain the same effect as in the above-mentioned embodiment.

【0024】次に、上記実施例で用いたアルミニウムか
らなる陰極電極(及び接触媒体)が通電導体の役割を果
し、被メッキ物にはメッキ被膜を析出させるが、陰極電
極(及び接触媒体)自体には、メッキ被膜がほとんど析
出しないことを確認した実験について説明する。
Next, the cathode electrode (and contact medium) made of aluminum used in the above-mentioned examples plays the role of a current-carrying conductor, and a plating film is deposited on the object to be plated, but the cathode electrode (and contact medium). An experiment that confirms that the plating film hardly deposits will be described.

【0025】図2は、この実験に用いた装置の構成を示
す図である。この実験では、容器11内のSn浴12中
に、金属製の器(上記実施例の陰極電極または接触媒体
に相当)13を浸漬するとともに、器13上に、これと
導通するように銅球14(上記実施例の被メッキ物に相
当する)を載置し、銅球14とSn浴12中に配設され
た陽極(Sn板)15との間に通電し、メッキを行っ
た。そして、上記金属製の器13として、銅、ニッケ
ル、ステンレス、アルミニウムとそれぞれ異なる材質か
らなる器を用いて実験を行い、銅球14と、器13に析
出したSnメッキ被膜の厚みを測定した。なお、Snメ
ッキ浴の温度は40℃、メッキ時間は10分間とした。
上記実験の結果を表1に示す。
FIG. 2 is a diagram showing the configuration of the apparatus used in this experiment. In this experiment, a metal container (corresponding to the cathode electrode or the contact medium in the above embodiment) 13 was immersed in an Sn bath 12 in a container 11, and a copper ball was placed on the container 13 so as to be electrically connected to it. 14 (corresponding to the object to be plated in the above example) was placed, and current was applied between the copper sphere 14 and the anode (Sn plate) 15 arranged in the Sn bath 12 for plating. Then, an experiment was performed using a container made of a material different from copper, nickel, stainless steel, and aluminum as the metal container 13, and the thickness of the copper sphere 14 and the Sn plating film deposited on the container 13 was measured. The temperature of the Sn plating bath was 40 ° C. and the plating time was 10 minutes.
The results of the above experiment are shown in Table 1.

【0026】[0026]

【表1】 [Table 1]

【0027】表1に示すように、アルミニウム以外の
銅、ニッケル、ステンレスの器13を用いた場合、器1
3には、銅球14とほとんど変らない厚み(2.0〜
2.2μm)のSnメッキ被膜が析出したが、アルミニ
ウムの器13を用いた場合、器13に析出したメッキ被
膜は0.1μmと極めて薄く、逆に、銅球14には、器
13のメッキ被膜よりはるかに厚い4.4μmの厚みの
メッキ被膜が形成されていることが確認された。
As shown in Table 1, when a copper, nickel, or stainless steel container 13 other than aluminum is used, the container 1
3 has a thickness (2.0 ~
Although the Sn plating film of 2.2 μm) was deposited, when the aluminum container 13 was used, the plating film deposited on the container 13 was extremely thin, 0.1 μm. It was confirmed that a plated coating having a thickness of 4.4 μm, which was much thicker than the coating, was formed.

【0028】この結果より、上記Snメッキを行う場合
において、アルミニウムからなる陰極電極及び接触媒体
を用いることにより、陰極電極及び接触媒体自体にメッ
キ被膜が析出することを抑制しつつ、被メッキ物に確実
にメッキ被膜を形成できることがわかる。
From the above results, in the case of performing the Sn plating, by using the cathode electrode and the contact medium made of aluminum, it is possible to prevent the plating film from being deposited on the cathode electrode and the contact medium itself, and to suppress the plating on the object to be plated. It can be seen that the plated film can be reliably formed.

【0029】なお、この実施例では、陰極電極及び接触
媒体の構成材料としてアルミニウムを用いた場合につい
て説明したが、メッキ被膜が析出しにくい材料は、これ
に限られるものではなく、被メッキ物の種類、メッキす
べき金属の種類、メッキ条件などを考慮し、あらかじ
め、上記のような実験を行って、メッキ被膜が析出しに
くい材料を調査することにより、適切な材料を選択する
ことが可能になる。
In this embodiment, the case where aluminum is used as the constituent material of the cathode electrode and the contact medium has been described, but the material in which the plating film is hard to deposit is not limited to this, and the material to be plated is not limited to this. It is possible to select an appropriate material by taking into consideration the type, the type of metal to be plated, the plating conditions, etc., and conducting the above-mentioned experiment in advance to investigate the material in which the plating film is hard to deposit. Become.

【0030】また、この発明は、その他の点においても
上記実施例に限定されるものではなく、メッキすべき金
属の種類、メッキ液の組成や温度などのメッキ条件、バ
レル、陰極電極及び接触媒体の具体的形状などに関し、
発明の要旨の範囲内において、種々の応用、変形を加え
ることが可能である。
In addition, the present invention is not limited to the above-mentioned embodiment in other respects. The kind of metal to be plated, plating conditions such as composition and temperature of plating solution, barrel, cathode electrode and contact medium. Regarding the specific shape of
Various applications and modifications can be made within the scope of the invention.

【0031】[0031]

【発明の効果】上述のように、この発明のメッキ方法
は、陰極電極(及び被メッキ物と陰極電極を導通させる
接触媒体)を、メッキすべき金属がその表面に析出しに
くい金属材料から構成するようにしているので、陰極電
極や接触媒体の形状に依存したり、頻繁にメンテナンス
を行ったりすることなく、陰極電極や接触媒体にメッキ
被膜が析出することを抑制できる。
As described above, according to the plating method of the present invention, the cathode electrode (and the contact medium for electrically connecting the object to be plated and the cathode electrode) is made of a metal material on which the metal to be plated is less likely to deposit. Therefore, it is possible to suppress the deposition of the plating film on the cathode electrode or the contact medium without depending on the shape of the cathode electrode or the contact medium or frequently performing maintenance.

【0032】したがって、陰極電極や接触媒体と被メッ
キ物との接触状態が悪くなったり、メッキ液中の電流分
布がロット間で不均一になったりすることを防止して、
製品間におけるメッキ厚のばらつきを確実に抑制、防止
することができる。
Therefore, it is possible to prevent the contact state between the cathode electrode or the contact medium and the object to be plated from being deteriorated, and to prevent the current distribution in the plating solution from becoming uneven between lots.
It is possible to reliably suppress and prevent variations in plating thickness between products.

【0033】また、陰極電極や接触媒体を構成する金属
材料として、アルミニウムまたはアルミニウム合金を用
いることにより、メッキすべき金属が陰極電極や接触媒
体の表面に析出することを確実に抑制することができ
る。
Further, by using aluminum or aluminum alloy as the metal material constituting the cathode electrode or the contact medium, it is possible to reliably prevent the metal to be plated from depositing on the surface of the cathode electrode or the contact medium. .

【0034】さらに、この発明によれば、例えば、アル
ミニウム製のメッシュベルトを通電導体とし、その上に
被メッキ物を載置し、給電と搬送を同時に行うことが可
能になり、被メッキ物のメッキ液への投入、メッキ処
理、被メッキ物の洗浄、製品の包装及び搬送などの諸工
程を自動化することも可能になる。
Further, according to the present invention, for example, an aluminum mesh belt is used as a current-carrying conductor, and an object to be plated can be placed on the mesh belt to supply power and convey the material simultaneously. It is also possible to automate various processes such as addition to the plating solution, plating treatment, washing of the object to be plated, product packaging and transportation.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の一実施例にかかるメッキ方法を示す
図である。
FIG. 1 is a diagram showing a plating method according to an embodiment of the present invention.

【図2】アルミニウムからなる陰極電極(及び接触媒
体)にメッキ被膜が析出しないことを確認するための実
験に用いた装置の構成を示す図である。
FIG. 2 is a diagram showing a configuration of an apparatus used in an experiment for confirming that a plating film is not deposited on a cathode electrode (and a contact medium) made of aluminum.

【図3】従来のメッキ方法を示す図である。FIG. 3 is a diagram showing a conventional plating method.

【符号の説明】[Explanation of symbols]

1 バレル 2 陰極電極 3 被メッキ物(積層セラミックコンデン
サ) 3a 積層セラミックコンデンサの外部電極 4 接触媒体 5 陽極電極 6 メッキ槽 7 メッキ液
1 barrel 2 cathode electrode 3 object to be plated (multilayer ceramic capacitor) 3a external electrode of multilayer ceramic capacitor 4 contact medium 5 anode electrode 6 plating tank 7 plating solution

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 被メッキ物をメッキ液中に浸漬し、被メ
ッキ物を陰極電極に継続的または断続的に接触させなが
ら、陰極電極と陽極電極の間に通電することにより、被
メッキ物に所定のメッキ被膜を析出させるようにしたメ
ッキ方法において、 陰極電極として、メッキ工程においてメッキすべき金属
がその表面に析出しにくい金属材料からなる陰極電極を
用いることを特徴とするメッキ方法。
1. An object to be plated is immersed in a plating solution, and the object to be plated is energized between the cathode electrode and the anode electrode while continuously or intermittently contacting the object to be plated with the cathode electrode. A plating method for depositing a predetermined plating film, characterized in that a cathode electrode made of a metal material that hardly deposits a metal to be plated in a plating step is used as the cathode electrode.
【請求項2】 内部に陰極電極を配設したバレルに、被
メッキ物を入れてメッキ液に浸漬し、メッキ液中に配設
された陽極電極と前記陰極電極との間に通電しながらバ
レルを回転させることにより、被メッキ物に所定のメッ
キ被膜を析出させるようにしたことを特徴とする請求項
1記載のメッキ方法。
2. A barrel in which a cathode electrode is disposed, a material to be plated is placed and immersed in a plating solution, and the barrel is energized between the anode electrode and the cathode electrode disposed in the plating solution. The plating method according to claim 1, wherein a predetermined plating film is deposited on the object to be plated by rotating the plate.
【請求項3】 前記バレルに、被メッキ物とともに、メ
ッキ工程においてメッキすべき金属がその表面に析出し
にくい金属材料からなる、被メッキ物と陰極電極を導通
させる接触媒体を入れることを特徴とする請求項2記載
のメッキ方法。
3. The barrel, together with the object to be plated, a contact medium, which is made of a metal material in which a metal to be plated in a plating step is less likely to deposit on the surface, is provided to electrically connect the object to be plated and the cathode electrode. The plating method according to claim 2.
【請求項4】 前記金属材料がアルミニウムまたはアル
ミニウム合金であることを特徴とする請求項1,2また
は3記載のメッキ方法。
4. The plating method according to claim 1, wherein the metal material is aluminum or an aluminum alloy.
JP05344030A 1993-12-16 1993-12-16 Plating method Expired - Fee Related JP3087554B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP05344030A JP3087554B2 (en) 1993-12-16 1993-12-16 Plating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05344030A JP3087554B2 (en) 1993-12-16 1993-12-16 Plating method

Publications (2)

Publication Number Publication Date
JPH07173690A true JPH07173690A (en) 1995-07-11
JP3087554B2 JP3087554B2 (en) 2000-09-11

Family

ID=18366117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP05344030A Expired - Fee Related JP3087554B2 (en) 1993-12-16 1993-12-16 Plating method

Country Status (1)

Country Link
JP (1) JP3087554B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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KR20190087585A (en) * 2017-04-14 2019-07-24 와이케이케이 가부시끼가이샤 Electroplating method and apparatus

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Publication number Priority date Publication date Assignee Title
WO2018109983A1 (en) * 2016-12-13 2018-06-21 Ykk株式会社 Method and device for electroplating fastener chain
KR20190087585A (en) * 2017-04-14 2019-07-24 와이케이케이 가부시끼가이샤 Electroplating method and apparatus
US11072866B2 (en) 2017-04-14 2021-07-27 Ykk Corporation Plated material and manufacturing method therefor
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