JPH0717029Y2 - Magnetic field detection circuit - Google Patents

Magnetic field detection circuit

Info

Publication number
JPH0717029Y2
JPH0717029Y2 JP10106688U JP10106688U JPH0717029Y2 JP H0717029 Y2 JPH0717029 Y2 JP H0717029Y2 JP 10106688 U JP10106688 U JP 10106688U JP 10106688 U JP10106688 U JP 10106688U JP H0717029 Y2 JPH0717029 Y2 JP H0717029Y2
Authority
JP
Japan
Prior art keywords
magnetic field
series circuit
variable
variable resistance
middle point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP10106688U
Other languages
Japanese (ja)
Other versions
JPH0221581U (en
Inventor
稔 翠川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yokogawa Electric Corp
Original Assignee
Yokogawa Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yokogawa Electric Corp filed Critical Yokogawa Electric Corp
Priority to JP10106688U priority Critical patent/JPH0717029Y2/en
Publication of JPH0221581U publication Critical patent/JPH0221581U/ja
Application granted granted Critical
Publication of JPH0717029Y2 publication Critical patent/JPH0717029Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

【考案の詳細な説明】 〈産業上の利用分野〉 本考案は、磁場により抵抗が変化する磁気抵抗素子を用
いてこの磁場に対応した出力電圧を検出する磁場検出回
路に係り、特にこの磁場検出回路の温度特性を改善した
磁場検出回路に関する。
DETAILED DESCRIPTION OF THE INVENTION <Industrial field of application> The present invention relates to a magnetic field detection circuit for detecting an output voltage corresponding to this magnetic field by using a magnetoresistive element whose resistance changes according to a magnetic field, and particularly to this magnetic field detection. The present invention relates to a magnetic field detection circuit having improved temperature characteristics of the circuit.

この磁場検出回路により、磁性体の位置に対応する出力
電圧を得ることができ、例えば電空ポジショナに使用す
るパイロットリレーの弁の位置を検出する場合などに応
用することができる。
With this magnetic field detection circuit, an output voltage corresponding to the position of the magnetic substance can be obtained, and it can be applied, for example, when detecting the position of the valve of the pilot relay used in the electropneumatic positioner.

〈従来の技術〉 この種の従来の磁場検出回路を第2図に示し、これにつ
いて説明する。
<Prior Art> A conventional magnetic field detection circuit of this type is shown in FIG. 2 and will be described.

電源端Vccと共通電位点COMとの間には抵抗R1、R2、R3
R4が順に直列に接続されている。また、抵抗R1とR2との
接続点と、抵抗R3とR4との接続点との間には磁気抵抗素
子R5とR6とが直列に接続されている。この磁気抵抗素子
R5とR6は1つの容器の中に所定の角度で配置収納されて
おり、その頂部への磁場Bの印加によりこの磁場の移動
の方向に対応して抵抗値が変化する。
Between the power supply terminal Vcc and the common potential point COM, resistors R 1 , R 2 , R 3 ,
R 4 is connected in series in sequence. Further, magnetoresistive elements R 5 and R 6 are connected in series between the connection point between the resistors R 1 and R 2 and the connection point between the resistors R 3 and R 4 . This magnetoresistive element
R 5 and R 6 are arranged and housed in a single container at a predetermined angle, and when a magnetic field B is applied to the top of the container, the resistance value changes according to the direction of movement of this magnetic field.

磁気抵抗素子R5とR6との接続点は出力端子T1に、抵抗R2
とR3との接続点は出力端子T2にそれぞれ接続されてい
る。
The connection point between the magnetoresistive elements R 5 and R 6 is the output terminal T 1 and the resistor R 2
The connection points between R 3 and R 3 are connected to the output terminal T 2 , respectively.

磁場Bの方向に対応して出力端子T1とT2との間に出力電
圧Voが出力される。この場合、磁気抵抗素子R5とR6とに
印加される磁場Bの方向が反転するとこれに応じて出力
端子T1とT2の間に得られる出力電圧Voの極性も反転す
る。
The output voltage V o is output between the output terminals T 1 and T 2 corresponding to the direction of the magnetic field B. In this case, when the direction of the magnetic field B applied to the magnetoresistive elements R 5 and R 6 is reversed, the polarity of the output voltage V o obtained between the output terminals T 1 and T 2 is also reversed accordingly.

〈考案が解決しようとする課題〉 しかしながら以上のような従来の磁場検出回路は、この
磁場検出回路に用いられている磁気検出素子の温度係数
が極めて大きいので、これ等の磁場検出素子R5、R6の温
度係数に少しでも差が存在すると出力電圧Voが温度変化
により大幅に変化するという問題がある。
<Problems to be solved by the device> However, in the conventional magnetic field detection circuit as described above, since the temperature coefficient of the magnetic detection element used in this magnetic field detection circuit is extremely large, these magnetic field detection elements R 5 , If there is any difference in the temperature coefficient of R 6 , there is a problem that the output voltage V o changes significantly due to temperature changes.

〈課題を解決するための手段〉 本考案は、以上の問題点を解決するために、磁場が印加
されることによってその抵抗が変化する一対の第1、第
2磁気抵抗素子と、この一対の第1、第2磁気抵抗素子
の各一端の間に両端が接続された第1可変抵抗素子と、
一対の磁気抵抗素子の各他端の間に第1抵抗と第2可変
抵抗素子と第2抵抗とが直列に接続された第1直列回路
と、直列回路の両端に印加される電源とを有し、所定の
温度範囲の上限において第1磁気抵抗素子の他端と第1
可変抵抗素子の中点とで形成される第2直列回路の温度
係数と第2磁気抵抗素子の他端と第1可変抵抗素子の中
点とで形成される第3直列回路の温度係数とが等しくな
るように第1可変抵抗の中点の位置を選定すると共に第
1、第2可変抵抗の各中点に現れるオフセット電圧がゼ
ロになるように第2可変抵抗の中点の位置を選定し、磁
場に対応する出力電圧を第1、第2可変抵抗素子の各中
点から出力するようにしたものである。
<Means for Solving the Problems> In order to solve the above problems, the present invention provides a pair of first and second magnetoresistive elements whose resistance changes when a magnetic field is applied, and a pair of these magnetoresistive elements. A first variable resistance element having both ends connected between one ends of the first and second magnetoresistive elements;
A first series circuit in which a first resistance, a second variable resistance element, and a second resistance are connected in series between the other ends of the pair of magnetoresistive elements, and a power supply applied to both ends of the series circuit are provided. Then, at the upper limit of the predetermined temperature range, the other end of the first magnetoresistive element and the first
The temperature coefficient of the second series circuit formed by the middle point of the variable resistance element and the temperature coefficient of the third series circuit formed by the other end of the second magnetoresistive element and the middle point of the first variable resistance element are The position of the middle point of the first variable resistor is selected so as to be equal, and the position of the middle point of the second variable resistor is selected so that the offset voltage appearing at each middle point of the first and second variable resistors becomes zero. The output voltage corresponding to the magnetic field is output from each midpoint of the first and second variable resistance elements.

〈作用〉 所定の温度範囲の上限では最大の抵抗変化を示すが、こ
の上限において第2直列回路と第3直列回路の各温度係
数が等しくなるように第1可変抵抗素子の中点を選定し
ているので、所定の温度範囲での温度変化による出力電
圧の変化を小さくすることができ、またこの選定により
出力電圧にオフセットが生じるが、これは第2可変抵抗
の中点の位置を調節することにより除去することが出来
る。
<Operation> The maximum resistance change is exhibited at the upper limit of the predetermined temperature range, and the middle point of the first variable resistance element is selected so that the temperature coefficients of the second series circuit and the third series circuit are equal at this upper limit. Therefore, the change in the output voltage due to the temperature change in the predetermined temperature range can be made small, and the selection causes an offset in the output voltage, which adjusts the position of the middle point of the second variable resistor. It can be removed.

〈実施例〉 次に、本考案の実施例について図面を用いて説明する。
第1図は本考案の1実施例の構成を示す回路図である。
<Example> Next, the Example of this invention is described using drawing.
FIG. 1 is a circuit diagram showing the configuration of an embodiment of the present invention.

磁気抵抗素子R5と磁気抵抗素子R6との間には可変抵抗素
子VR1が接続され、その中点は出力端子T1に接続されて
いる。
The variable resistance element VR 1 is connected between the magnetoresistive element R 5 and the magnetoresistive element R 6, and the midpoint thereof is connected to the output terminal T 1 .

そして、磁気抵抗素子R5と可変抵抗素子VR1の中点との
間の合成抵抗で第2直列回路10が構成され、磁気抵抗素
子R6と可変抵抗素子VR1の中点との間の合成抵抗で第3
直列回路11がそれぞれ構成されている。
Then, the second series circuit 10 is configured by the combined resistance between the magnetoresistive element R 5 and the middle point of the variable resistance element VR 1 , and the second series circuit 10 is formed between the magnetoresistive element R 6 and the middle point of the variable resistance element VR 1 . 3rd with synthetic resistance
Each of the series circuits 11 is configured.

これ等の第2直列回路10と第3直列回路11の温度係数
は、例えば使用温度範囲の上限Tcで等しくなるように可
変抵抗素子VR1の中点の位置が選定される。
The position of the middle point of the variable resistance element VR 1 is selected so that the temperature coefficients of the second series circuit 10 and the third series circuit 11 are equal to each other, for example, at the upper limit T c of the operating temperature range.

また、抵抗R2と抵抗R3との間には可変抵抗素子VR2が接
続され、その中点は出力端子T2に接続されている。
Further, a variable resistance element VR 2 is connected between the resistance R 2 and the resistance R 3, and its midpoint is connected to the output terminal T 2 .

そして、抵抗R2と可変抵抗素子VR2と抵抗R3とで第1直
列回路12が構成されている。
The resistor R 2 , the variable resistance element VR 2 and the resistor R 3 form a first series circuit 12.

この場合、可変抵抗素子VR1で第2、第3直列回路の温
度係数を合わせたのでブリッジのバランスが崩れてお
り、出力端子T1とT2の間にオフセット電圧が生じてい
る。従って、この可変抵抗素子VR2によりその中点の位
置を選定してこのオフセット電圧を除去する。
In this case, since the temperature coefficients of the second and third series circuits are matched by the variable resistance element VR 1 , the bridge balance is lost, and an offset voltage is generated between the output terminals T 1 and T 2 . Therefore, the offset voltage is removed by selecting the position of the middle point by the variable resistance element VR 2 .

次に、以上のように構成された第1図に示す磁場検出回
路の動作を説明する。
Next, the operation of the magnetic field detection circuit shown in FIG. 1 configured as above will be described.

いま、常温から使用温度範囲の上限Tcまで、例えば20℃
から80℃まで、変化させたときの磁気抵抗素子R5の温度
係数に基づく抵抗変化量をΔR5、磁気抵抗素子R6の抵抗
変化量をΔR6とし、……可変抵抗素子VR1の第2直列回
路10側の抵抗値をVRX、第3直列回路11側の抵抗値をVR
(1−X)とすれば、第2直列回路10の温度係数と第3
直列回路11の温度係数とが一致するときの可変抵抗素子
の中点の位置Xは、 [(R5+ΔR5)+VR・x] /[R5+VR・x] =[(R6+ΔR6)+VR(1−x)] /[R6+VR(1−x)] ……(1) で与えられる。これを解くと、xは x=[ΔR5・R6−R5・ΔR6+ΔR5・VR] /[(ΔR6+ΔR5)VR] ……(2) となる。
Now, from room temperature to the upper limit Tc of the operating temperature range, for example, 20 ° C
To 80 ° C, the resistance change amount based on the temperature coefficient of the magnetoresistive element R 5 is ΔR 5 , the resistance change amount of the magnetoresistive element R 6 is ΔR 6 , and the variable resistance element VR 1 2 The resistance value of the series circuit 10 side is VRX, and the resistance value of the third series circuit 11 side is VR
If (1-X), the temperature coefficient of the second series circuit 10 and the third
When the temperature coefficient of the series circuit 11 matches, the position X of the middle point of the variable resistance element is [(R 5 + ΔR 5 ) + VR · x] / [R 5 + VR · x] = [(R 6 + ΔR 6 ). + VR (1-x)] / [R 6 + VR (1-x)] is given by ... (1). Solving this, x becomes x = [ΔR 5 · R 6 −R 5 · ΔR 6 + ΔR 5 · VR] / [(ΔR 6 + ΔR 5 ) VR] …… (2).

ここで、例えば、R5=R6=3KΩ、ΔR5=610Ω、ΔR6=6
00Ω、VR=100Ωとすれば、これを(2)式に代入して X=0.752 を得る。従って、このように可変抵抗素子VR1の中点の
位置を選定すれば良い。
Here, for example, R 5 = R 6 = 3KΩ, ΔR 5 = 610Ω, ΔR 6 = 6
If 00Ω and VR = 100Ω, this is substituted into the equation (2) and X = 0.752 is obtained. Therefore, the position of the midpoint of the variable resistance element VR 1 may be selected in this way.

〈考案の効果〉 以上、実施例と共に具体的に説明したように本考案によ
れば、所定の温度範囲の上限で第2直列回路と第3直列
回路の温度係数が等しくなるように第1可変抵抗素子の
中点の位置を選定したので、この温度範囲での温度変化
を安価な構成で実用上十分なレベルに低減することがで
き、これにともない生じるオフセット電圧は第2可変抵
抗素子で除去することが出来る。
<Advantages of the Invention> As described above in detail with the embodiments, according to the present invention, the first variable so that the temperature coefficients of the second series circuit and the third series circuit become equal at the upper limit of the predetermined temperature range. Since the position of the middle point of the resistance element is selected, the temperature change in this temperature range can be reduced to a practically sufficient level with an inexpensive configuration, and the offset voltage generated due to this can be removed by the second variable resistance element. You can do it.

【図面の簡単な説明】[Brief description of drawings]

第1図は本考案の1実施例の構成を示す回路図、第2図
は従来の磁場検出回路の構成を示す回路図である。 10……第2直列回路、11……第3直列回路、12……第1
直列回路、R1〜R4……抵抗、R5、R6……磁気抵抗素子、
B……磁場。
FIG. 1 is a circuit diagram showing the configuration of one embodiment of the present invention, and FIG. 2 is a circuit diagram showing the configuration of a conventional magnetic field detection circuit. 10 …… Second series circuit, 11 …… Third series circuit, 12 …… First
Series circuit, R 1 to R 4 ...... Resistance, R 5 , R 6 ...... Magnetic resistance element,
B ... magnetic field.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項1】磁場が印加されることによってその抵抗が
変化する一対の第1、第2磁気抵抗素子と、この一対の
第1、第2磁気抵抗素子の各一端の間に両端が接続され
た第1可変抵抗素子と、前記一対の磁気抵抗素子の各他
端の間に第1抵抗と第2可変抵抗素子と第2抵抗とが直
列に接続された第1直列回路と、前記直列回路の両端に
印加される電源とを有し、所定の温度範囲の上限におい
て前記第1磁気抵抗素子の他端と前記第1可変抵抗素子
の中点とで形成される第2直列回路の温度係数と前記第
2磁気抵抗素子の他端と前記第1可変抵抗素子の中点と
で形成される第3直列回路の温度係数とが等しくなるよ
うに前記第1可変抵抗の中点の位置を選定すると共に前
記第1、第2可変抵抗の各中点に現れるオフセット電圧
がゼロになるように前記第2可変抵抗の中点の位置を選
定し、前記磁場に対応する出力電圧を前記第1、第2可
変抵抗素子の各中点から出力するようにしたことを特徴
とする磁場検出回路。
1. A pair of first and second magnetoresistive elements whose resistance changes when a magnetic field is applied, and one end of each of the pair of first and second magnetoresistive elements. A first variable resistance element, a first series circuit in which a first resistance, a second variable resistance element, and a second resistance are connected in series between the other ends of the pair of magnetoresistive elements, and the series circuit. And a power source applied to both ends of the second series circuit, the temperature coefficient of the second series circuit formed by the other end of the first magnetoresistive element and the midpoint of the first variable resistance element at the upper limit of a predetermined temperature range. And the position of the middle point of the first variable resistance is selected so that the temperature coefficient of the third series circuit formed by the other end of the second magnetoresistive element and the middle point of the first variable resistance element becomes equal. And so that the offset voltage appearing at each midpoint of the first and second variable resistors becomes zero. Said second selected position of the middle point of the variable resistor, wherein the output voltage corresponding to the magnetic field first, the magnetic field detection circuit, characterized in that so as to output from the midpoint of the second variable resistive element.
JP10106688U 1988-07-29 1988-07-29 Magnetic field detection circuit Expired - Lifetime JPH0717029Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10106688U JPH0717029Y2 (en) 1988-07-29 1988-07-29 Magnetic field detection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10106688U JPH0717029Y2 (en) 1988-07-29 1988-07-29 Magnetic field detection circuit

Publications (2)

Publication Number Publication Date
JPH0221581U JPH0221581U (en) 1990-02-13
JPH0717029Y2 true JPH0717029Y2 (en) 1995-04-19

Family

ID=31329719

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10106688U Expired - Lifetime JPH0717029Y2 (en) 1988-07-29 1988-07-29 Magnetic field detection circuit

Country Status (1)

Country Link
JP (1) JPH0717029Y2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6511336B2 (en) * 2015-06-02 2019-05-15 エイブリック株式会社 Temperature compensation circuit and sensor device

Also Published As

Publication number Publication date
JPH0221581U (en) 1990-02-13

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