JPH07161870A - Coupled board for mounting semiconductor, and semiconductor device - Google Patents

Abstract

PURPOSE:To increase the number of unit insulating boards obtained from one coupled board by coupling the terminal conductive film in each of a plurality of unit insulating boards directly with the periphery of the surface conductive film of adjacent other unit insulating board. CONSTITUTION:Many unit insulating boards 10 are made in repeat pattern on one coupled board (green sheet). The terminal conductive film 16a in each of the unit insulating boards 10 is coupled directly with the periphery of a surface conductive film 16. Accordingly, the terminal conductive film 16a is never isolated by an insulated region, and in a green sheet, all metallic patterns are connected in one. Therefore, the metallic patterns can be made by plating. Hereby, the number of unit insulating boards 10 obtained from one green sheet increases.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of an insulating substrate which constitutes a package for mounting a semiconductor chip. In particular, the present invention relates to a semiconductor mounting connection substrate and a semiconductor device for a ceramic package suitable for a high frequency semiconductor device.

[0002]

2. Description of the Related Art Recently, high frequency radio waves are increasingly used in communication systems.
There is an increasing demand for semiconductors used in the HF band and the microwave band. Under such circumstances, there is a demand for a semiconductor device which can be used in these high frequency regions, is inexpensive, and can be mass-produced. Conventionally, a semiconductor device including a resin mold package and a semiconductor device including a ceramic package are known. Although resin-molded semiconductor devices can be manufactured relatively inexpensively, they are not suitable for high-frequency semiconductor devices, while ceramic semiconductor devices are suitable for high-frequency semiconductor devices, but are said to be expensive. Therefore, it is required to manufacture a ceramic semiconductor device that can be used in a high frequency region at a relatively low cost.

For example, as shown in FIG. 12, a conventional typical ceramic semiconductor device 1 has a semiconductor package 3 mounted on a ceramic package base portion 2, a cap 4 mounted on the package bottom plate 2 and hermetically sealed. It will be. The package base 2 has a ceramic plate member 5 having a substantially rectangular shape,
And a metallic pattern formed on the surface of the ceramic plate member 5. The metallic pattern has a surface conductive film 6 covering a considerable area of the surface of the ceramic plate member 5, and a plurality of terminal conductive films 6a formed on the peripheral portion of the ceramic plate member 5 (along each side of the ceramic plate member). including. An insulating region 9a is provided around each terminal conductive film 6a, and electrically insulates the terminal conductive film 6a on the ceramic plate member 5 from the surface conductive film 6. Usually, metal leads 8 are attached to the terminal conductive film 6a, and after the semiconductor chip 3 is mounted on the package base portion 2, wire bonding 7 is performed between the semiconductor chip 3 and the terminal conductive film 6a. ing.

As shown in FIG. 13, the ceramic plate member 5 is manufactured from a green sheet 9. The green sheet 9 is made, for example, by heating a mixture of alumina powder and a binder at a predetermined temperature and stretching the mixture into a sheet shape, and has an area of several tens to several hundreds of times that of the ceramic plate member 5. In FIG. 13, some of the four ceramic plate members 5 are shown by broken lines. The four ceramic plate members 5 are formed on the green sheet 9 in a repeating pattern. Finally, the ceramic plate member 5 is cut out from the green sheet 9 along the broken line or die-cut.

Before separating the individual ceramic plate members 5 from the green sheet 9, a metallic pattern indicated by hatching is formed on the surface of the green sheet 9. As described above, the metallic pattern includes the surface conductive film 6 including the chip mounting portion of each ceramic plate member 5 and the terminal conductive film 6a in the peripheral portion of each ceramic plate member 5, and as a whole, a considerable portion of the surface of the green sheet 9 is formed. Covers. The insulating region 9a around each terminal conductive film 6a does not have a metallic pattern, and has a structure of a ceramic base material.

The metallic pattern has a thin first layer of paste-like tungsten or molybdenum-manganese applied using a mask corresponding to the insulating region 9a, and a second layer formed on the first layer by nickel plating. Consists of layers. Thereafter, an additional layer of gold or the like can be provided. In order to perform plating, all metallic patterns on the green sheet 9 are connected. For this reason, it is necessary to prevent the terminal conductive film 6a from being isolated from other portions of the entire metallic pattern. For example, the terminal conductive film 6p of the ceramic plate member 5 located in the upper left of FIG. 13 and the terminal conductive film 6q of the ceramic plate member 5 adjacent on the right side thereof.
There is a metallic pattern portion 9p between and, and the terminal conductive film 6p and the terminal conductive film 6q are continuous with the metallic pattern portion 6h. The metallic pattern portion 6h is a surplus portion that is not included inside each ceramic plate member 5.

A portion 9p of such a metallic pattern
To eliminate this, for example, it is necessary to dispose the ceramic plate member 5 located at the upper right of FIG. 13 close to the left ceramic plate member 5. Then, the right terminal conductive film 6q becomes continuous with the left terminal conductive film 6p,
The insulating region 9a completely surrounds the terminal conductive films 6p and 6q,
The terminal conductive films 6p and 6q are isolated from the other metallic pattern portions. Terminal conductive film 6p, 6q
If is isolated, plating will not be possible. This is shown in FIG.
Terminal conductive film 6a of the ceramic plate member 5 located at the upper left of the
And the terminal conductive film 6 of the ceramic plate member 5 located thereunder
The same applies to the relationship with a.

[0008]

As described above, in the conventional green sheet 9, since the ceramic plate members 5 are arranged at a considerable interval, the ceramic plate member 5 obtained from one green sheet 9 is disposed. However, there is a problem in that the cost of the package base portion 2 and the ceramic semiconductor device 1 is high because of the small number. An object of the present invention is to provide a semiconductor mounting connection substrate and a semiconductor device that can overcome the above problems and reduce costs.

[0009]

A connecting substrate according to the present invention is a unit insulating substrate in which a surface conductor film 16 and a terminal conductive film 16a insulated from the surface conductor film are provided on one plane. 10 is a connecting substrate 30 formed by connecting two or more in a plane, and the terminal conductive film 16a in each of the plurality of unit insulating substrates is a peripheral edge of the surface conductive film 16 of another adjacent unit insulating substrate. It is characterized in that it is directly connected to the section.

[0010]

In the above structure, a large number of unit insulating substrates (package base portions) are repeatedly formed on one connecting substrate (green sheet). In two adjacent unit insulating substrates, the terminal conductive film of one unit insulating substrate is directly connected to the peripheral portion of the surface conductive film of another adjacent unit insulating substrate. Therefore, the terminal conductive film is not isolated by the insulating region, and all the metallic patterns are connected in the green sheet. Therefore, the metallic pattern can be formed by plating. Since it is not necessary to form a surplus metallic pattern portion between two adjacent unit insulating substrates, the number of unit insulating substrates obtained from one green sheet is increased, and thus the package The manufacturing cost of the base portion and the semiconductor device using the base portion can be reduced.

[0011]

1 is a view showing a package base portion 10 of a first embodiment of the present invention, and FIG. 2 is a ceramic package using the package base portion (unit insulating substrate) 10 of FIG. 1 as a bottom plate. FIG. 3 is a diagram showing a semiconductor device 20, and FIG. 3 is a diagram showing a green sheet (connection substrate) 30 for making the package base portion 10 of FIG.

As shown in FIGS. 1 and 2, the ceramic semiconductor device 20 is formed by mounting a semiconductor chip 13 on a package base portion 10, attaching a cap 14 to the package base portion 10, and hermetically sealing. is there. The package base portion 10 has a surface conductor film 16 and a terminal conductor film 16 a formed on the surface of the ceramic plate member 15 as a metallic pattern. The metal lead 18 is attached from the terminal conductive film 16a on the front surface of the ceramic plate member 15 to the terminal conductive film 16c formed on the back surface of the ceramic plate member 15 via the terminal conductive film 15b on the side surface.
The semiconductor chip 13 is attached to the surface conductor film 16, and wire bonding 17 is performed between the semiconductor chip 13 and the terminal conductive film 16a.

The ceramic plate member 15 has a substantially rectangular shape, and the terminal conductive film 16a is formed on the ceramic plate member 15.
Is formed on the peripheral portion of the surface of the ceramic plate member 15 along each side thereof. Here, the rectangle includes a square. Further, the substantially rectangular shape also includes a case where a through hole or the like is provided on each side. In order to electrically insulate the terminal conductive film 16a of the ceramic plate member 15 from the surface conductive film 16, there is an insulating region 19 around each terminal conductive film 16a, and this insulating region 19 does not have a metallic pattern, and the ceramic substrate It is the same structure.

In the embodiment shown in FIG. 1, the ceramic plate member 15 comprises a pair of parallel first and second sides 41, 42.
And another pair of parallel third and fourth sides 43, 44. Two terminal conductive films 16a are provided along the first side 41.
And one terminal conductive film 16a is provided along each of the other sides 42, 43, and 44. The alternate long and short dash line L ₁ is a line that is parallel to the first and second sides 41 and 42 and passes through the centers of the third and fourth sides 43 and 44. One-dot chain line L
₂ is parallel to the third and fourth sides 43, 44 and is the first and second sides
Is a line passing through the centers of the sides 41 and 42 of the.

The first side of the 41 two arranged along the terminal conductive film 16a is a one-dot chain line L ₂ on both sides of the one-dot chain line L ₂ at a position away distance greater than the width of the terminal conductive film 16a. The terminal conductive film 16 arranged along the second side 42
a is on the alternate long and short dash line L ₂ . That is, the distance from each of the two terminal conductive films 16 a arranged along the first side 41 to the third side 43 is the distance from 16 a arranged along the second side 42 to the third side 43. Is different from the distance to.

Similarly, the terminal conductive film 16a arranged along the third side 43 is on one side of the alternate long and short dash line L ₁ , and the terminal conductive film 16a arranged along the fourth side 44 is one point. It is on the other side of the chain line L ₁ . That is, the third side 4
3 from the terminal conductive film 16a arranged along the first side 4
The distance to 1 is 16a arranged along the fourth side 44.
To the first side 41 is different.

In FIG. 3, the green sheet 30 is made by heating a mixture of alumina powder and a binder at a predetermined temperature and stretching the mixture into a sheet, and has an area of a large number of ceramic plate members 15. In FIG. 3, metallic patterns corresponding to six semiconductor package base portions 10 (ceramic plate members 15) are formed on the green sheet 30 in a matrix pattern in a matrix form. Metallic patterns are hatched for clarity. After the metallic pattern is formed, the green sheet 30 is divided along the broken line by cutting or die cutting to finally obtain the individual package base portion 10. The tip of each insulating region 19 extends beyond the cutting line of the package base 10 shown by the broken line to the other package base 10. Therefore, when divided into individual package base portions 10, only the tip of each insulating region 19 is the other package base portion 10.
Will remain. This is indicated by 19x in FIG.

All the terminal conductive films 16a are formed in the pattern described with reference to FIG. 1, and when viewed in the green sheet 30 of FIG. 3, one side of the ceramic plate member 15 of a certain package base portion 10 (for example, as shown in FIG. 3, the terminal conductive film 16a formed along the right side 42) of the ceramic plate member 15 located at the upper left of FIG.
5 is directly connected to the peripheral portion of the surface conductive film 16 of the ceramic plate member 15 (the ceramic plate member 15 located in the upper center part in FIG. 3) adjacent to 5. This can be said for all the terminal conductive films 16a arranged along the other sides.

As described above, the terminal conductive film 16a arranged along the first side 41 of each ceramic plate member 15 passes through the terminal conductive film 16a arranged along the second side 42 and the third side. Similarly, the terminal conductive film 16a arranged along the third side 43 and not on the line L ₂ parallel to the side 43 of the same passes through the terminal conductive film 16a arranged along the fourth side 43. Moreover, since it is not on the line L ₁ parallel to the first side 41, even if a plurality of ceramic plate members 15 are formed in the green sheet 30 at positions adjacent to each other in a repeated pattern, the terminal conductive films of the adjacent ceramic plate members 15 are formed. 16a are not continuous with each other, and thus the terminal conductive film 16a is not isolated by the insulating region 19. Therefore, the surplus metallic pattern portion 6 shown in FIG.
Even without h, all the metallic patterns 16 are connected in the green sheet 30, and plating can be performed. That is, the metallic patterns of all the ceramic plate members 15 can be treated as one electrode in the plating process. In addition, the terminal conductive film 1 on the outer edge side of the package base portion 10 located on the peripheral portion of the green sheet 30.
6a is electrically connected by a peripheral conductive region provided on the peripheral edge of the package base portion 10 of the green sheet 30.

FIG. 4 shows the surface conductive film 16 and the terminal conductive film 16.
The metallic pattern including a has a plurality of metal layers 45 and 46.
It shows that it consists of. In forming the metallic pattern 16, first, a thin film of paste-like tungsten or molybdenum-manganese is applied to the surface of the green sheet 30 using a mask corresponding to the insulating region 19 to form the first metal layer 45. At this time, the insulating region 19
Since the mask corresponding to (1) is used, the metal does not adhere to the portion corresponding to the insulating region 19. Then, nickel plating is performed on the first metal layer 45, and the second metal layer 46 is formed.
To form. At this time, all metallic patterns must be connected. The first metal layer 45
Is, for example, 1000 to 2000 A, and the thickness of the second metal layer 46 is, for example, 2 to 4 μm. then,
Gold plating can be performed on the second metal layer 46.

As described above, according to the present invention, the plurality of ceramic plate members 15 can be arranged immediately adjacent to the green sheet 30, and there is no excess portion between the plurality of ceramic plate members 15. As a result, the number of ceramic plate members 15 obtained from one green sheet 30 increases, and the manufacturing cost of each ceramic plate member 15 can be reduced.

FIG. 5 is a view showing a green sheet 30 according to the second embodiment of the present invention. This green sheet 30 is shown in FIG.
The green sheet 30 has the above-mentioned features.
Further, in FIG. 5, the distance from the terminal conductive film 16 a arranged along the first side 41 to the third side 43 is the distance from the terminal conductive film 16 a arranged along the second side 42 to the third side 43. 3 is different from the distance to the side 43, and the second side 4
From the terminal conductive film 16a arranged along the second side to the fourth side 4
It is equal to the distance to 4. Similarly, the third side 43
From the terminal conductive film 16a arranged along the first side 41
Is different from the distance to the first side 41 of the terminal conductive film 16a arranged along the fourth side 44, and is equal to the distance to the second side 42.

That is, the terminal conductive films 16a are arranged in point symmetry at the center points of the respective package bases 10. As a result, the metal lead 18 is attached to the package base 1
When mounting to 0, the semiconductor package base portion 10
Since it is not necessary to confirm whether or not is set in the correct direction, the process such as inspection can be simplified. For example, in FIG.
FIG. 6 is a diagram showing a state in which the package base portion 10 (ceramic plate member 15) is assembled to a lead frame 70 having metal leads 18. The package base portion 10 shows the back surface side of the one shown in FIG. The package base portion 10 (ceramic plate member 15) can be mounted at the position shown in FIG. 6, or can be mounted at a position rotated 180 degrees from the position shown in FIG. In any case, the package base portion 10 (ceramic plate member 15) is correctly arranged on the lead frame 70. In FIG. 6, the lead frame 70 has a support plate portion 71 in addition to the metal leads 18, and
2 extends from the support plate portion 71 in parallel with the metal leads 18 toward the outer frame.

The terminal conductive film 16b on the side surface of the ceramic plate member 15 can be formed after dividing the green sheet 30. Also, the terminal conductive film 16b on the side surface of the ceramic plate member 15 can be directly associated with the green sheet 30 as shown in FIG. FIG. 7 is a diagram showing the formation of the terminal conductive film 16b on the side surface of the green sheet 30. The green sheet 30 has the features of the green sheet 30 shown in FIG. further,
The green sheet 30 is provided with through holes 57 at positions passing through the terminal conductive films 16a on the dividing line of the ceramic plate member 15 shown by the broken line. This through hole 57
Is provided before the metallic pattern plating process and is filled with tungsten or molybdenum manganese. Therefore, when the metallic pattern is formed on the surface of the ceramic plate member 15 by plating, the terminal conductive film 16b on the side surface of the ceramic plate member 15 is also plated at the same time, and the terminal conductive film 15a on the surface of the ceramic plate member 15 and the terminal on the side surface. It is continuous with the conductive film 16b. The metallic pattern on the back surface of the ceramic plate member 15 is also formed in the same manner as the metallic pattern on the front surface of the ceramic plate member 15. The metallic pattern on the back surface of the ceramic plate member 15 also includes a surface conductive film and a terminal conductive film 16c. The terminal conductive film 16c is formed at the same position as the terminal conductive film 15a on the surface of the ceramic plate member 15, and the through hole 57 is formed. It passes through the terminal conductive film 15a on the front surface and the terminal conductive film 16c on the back surface. Therefore, the metallic patterns on both the front and back surfaces of the ceramic plate member 15 can be formed at the same time, and the terminal conductive film 15a on the front surface and the terminal conductive film 16c on the back surface are electrically connected via the terminal conductive film 16b on the side surface.

FIG. 8 is a diagram showing a leadless chip carrier 60 formed according to the third embodiment of the present invention. The leadless chip carrier 60 includes the semiconductor package base portion 10 as a type of package and does not include the metal lead 18 of FIG. Semiconductor package base portion 10
Is mounted on a carrier 61 such as a printed circuit board having solder bumps 62. In the package base portion 10 for a semiconductor, a metallic pattern is provided on the front surface of the ceramic plate member 15, and the terminal conductive film 16c on the back surface of the ceramic plate member 15 is placed on the solder bumps 62 and is connected by melting the solder bumps. .

FIG. 9 is a view showing a green sheet 30 according to the fourth embodiment of the present invention. This green sheet 30 is shown in FIG.
The green sheet 30 has the above-mentioned features.
In FIG. 9, the ceramic plate member 15 has a square shape and the terminal conductive film 1 on each side 41, 42, 43, 44.
6a has the above-mentioned point-symmetrical arrangement, and the same pattern appears even when the ceramic plate member 15 is rotated by 90 degrees. Therefore, the metal lead 18
Can be set easily when the semiconductor chip 13 is attached to the package base portion 10 and when the semiconductor chip 13 is attached to the semiconductor package base portion 10.

FIG. 10 is a view showing a green sheet 30 according to the fifth embodiment of the present invention. The green sheet 30 has the above-mentioned features of the green sheet 30 shown in FIG. 1, and also has a plurality of terminal conductive films 16a along the respective sides 41, 42, 43, 44. The terminal conductive film 16a on each side is arranged so as not to be on the same line as the terminal conductive film 16a arranged along the opposite side as described above.

FIG. 11 is a view showing a green sheet 30 according to the sixth embodiment of the present invention. This green sheet 30
Ceramic plate member 1 of each semiconductor package base portion 10
The terminal conductive film 1 is provided only on a pair of sides 5 (first and second sides 41 and 42 in the upper left ceramic plate member 15 of FIG. 11).
6a, and the terminal conductive film 16a does not exist on the other pair of sides (the third and fourth sides 43 and 44 in the upper left ceramic plate member 15 of FIG. 11). The terminal conductive film 16a on the pair of sides 41 and 42 is on a line parallel to the sides 41 and 42.

The ceramic plate members 15 of the adjacent semiconductor package base portions 10 are repeatedly arranged in a matrix with the corresponding sides rotated by 90 degrees. For example,
The pattern of the terminal conductive film 16a on the first side 41 of the upper ceramic plate member 15 in FIG. 11 is the same as the pattern of the terminal conductive film 16a on the third side 43 of the upper right ceramic plate member 15. Also in this green sheet 30, the terminal conductive film 16a formed along one side of the ceramic plate member 15 of a certain package base portion 10 (for example, the right side 42 of the ceramic plate member 15 located at the upper left of FIG. 11), The ceramic plate member 1 adjacent to the ceramic plate member 15
5 (ceramic plate member 1 located on the upper right side in FIG. 11)
It is directly connected to the peripheral portion of the surface conductive film 16 of 5).

Therefore, even if a plurality of ceramic plate members 15 are formed in the green sheet 30 at positions adjacent to each other in a repeated pattern, the terminal conductive films 16a of the adjacent ceramic plate members 15 do not continue, and therefore, these ceramic plate members 15 do not continue. The terminal conductive film 16a is not isolated by the insulating region 19. Therefore, it can be plated.

[0031]

As described above, according to the present invention,
The manufacturing cost of the semiconductor mounting connection board and the semiconductor device using the same can be reduced.

[Brief description of drawings]

FIG. 1 is a perspective view showing a semiconductor package base portion according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view showing a semiconductor device using the semiconductor package base portion of FIG.

FIG. 3 is a plan view showing a green sheet for making the semiconductor package base portion of FIG.

4 is a cross-sectional view taken along line IV-IV in FIG.

FIG. 5 is a plan view showing a green sheet according to a second embodiment of the present invention.

FIG. 6 is a plan view showing a state where the semiconductor package base portion of FIG. 5 is attached to a lead frame.

FIG. 7 is a plan view showing formation of a terminal conductor layer on a side surface.

FIG. 8 is a side view showing a leadless chip carrier according to a third embodiment of the present invention.

FIG. 9 is a plan view showing a part of a green sheet according to a fourth embodiment of the present invention.

FIG. 10 is a plan view showing a part of a green sheet according to a fifth embodiment of the present invention.

FIG. 11 is a plan view showing a part of a green sheet according to a sixth embodiment of the present invention.

FIG. 12 is a cross-sectional view showing a conventional ceramic semiconductor device.

FIG. 13 is a plan view showing a conventional green sheet.

[Explanation of symbols]

 10 ... Semiconductor package base portion 13 ... Semiconductor chip 15 ... Ceramic plate member 16 ... Surface conductive film 16a ... Terminal conductive film 18 ... Metal lead 19 ... Insulating region 20 ... Semiconductor device 30 ... Green sheet 60 ... Leadless chip carrier

Claims (9)

[Claims] 1. A surface conductor film (16) on one plane, and a terminal conductive film (16a) insulated and separated from the surface conductor film.
A unit insulating substrate (10) provided with is a connection substrate (30) formed by planarly connecting a plurality of units, and the terminal conductive film (16a) in each of the plurality of unit insulating substrates is A connection substrate, which is directly connected to a peripheral portion of a surface conductive film (16) of another adjacent unit insulating substrate. 2. The connection board according to claim 1, wherein a plurality of the terminal conductive films are provided on one side of a peripheral portion of the unit insulating board. 3. A peripheral conductive region is provided at a peripheral edge of the unit insulating substrate, and a terminal conductive film of each unit insulating substrate located at a peripheral portion of the connection substrate is electrically connected by the peripheral conductive region. 1. The method according to claim 1, wherein
The connection board according to. 4. A plating film formed on the surfaces of the surface conductive film and the terminal conductive film of the connection substrate by supplying a current to the surface conductive film, the terminal conductive film, or the peripheral conductive region. The connection board according to any one of claims 1 to 3, wherein the connection board is provided. 5. A connection board having the front surface conductive film and the terminal conductive film provided on both front and back surfaces, and the conductive terminal electrode film positions on the front and back surfaces are the same at the peripheral edge of the unit insulating substrate. The connection board according to any one of claims 1 to 4, wherein: 6. A through hole penetrating an insulating plate is provided at a position where at least a part of a terminal conductive film or a surface conductive film is provided on a peripheral portion of a unit insulating substrate, and an inner wall of the through hole is formed. The connection board according to claim 5, wherein a conductive film is formed and the terminal conductive films on the front and back sides are electrically connected. 7. The unit insulating substrate is substantially square, and another unit insulating substrate adjacent to one unit insulating substrate is a substrate having a conductive film pattern rotated by 90 degrees. Any one of claims 1 to 6 characterized in that
The connection board according to item. 8. The unit conductive substrate of a unit insulating substrate formed by dividing the connection substrate has a base portion having external connection terminals attached thereto. The package according to item 1. 9. The surface conductive film and the terminal by supplying an electric current to the surface conductive film, the terminal conductive film, or the peripheral conductive region of the connection substrate according to claim 1. Forming a plating film on the surface of the conductive film; dividing the connection substrate into unit insulating substrates; and forming the external connection terminals on the terminal conductive films of the divided unit insulating substrates. And a step of fixing a semiconductor chip on the surface conductive film on the unit insulating substrate, the manufacturing method of the semiconductor device.