JP3264760B2 - Connection board and package for mounting semiconductor, and method of manufacturing semiconductor device - Google Patents

Abstract

PURPOSE:To increase the number of unit insulating boards obtained from one coupled board by coupling the terminal conductive film in each of a plurality of unit insulating boards directly with the periphery of the surface conductive film of adjacent other unit insulating board. CONSTITUTION:Many unit insulating boards 10 are made in repeat pattern on one coupled board (green sheet). The terminal conductive film 16a in each of the unit insulating boards 10 is coupled directly with the periphery of a surface conductive film 16. Accordingly, the terminal conductive film 16a is never isolated by an insulated region, and in a green sheet, all metallic patterns are connected in one. Therefore, the metallic patterns can be made by plating. Hereby, the number of unit insulating boards 10 obtained from one green sheet increases.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of an insulating substrate constituting a package for mounting a semiconductor chip. In particular, the present invention relates to a semiconductor mounting connection substrate and a package for a package made of ceramic suitable for a high-frequency semiconductor device, and a method of manufacturing the semiconductor device.

[0002]

2. Description of the Related Art In recent years, radio waves in the high frequency range have been increasingly used in communication systems.
The demand for semiconductors used in the HF band and the microwave band is increasing. Under such circumstances, there is a demand for an inexpensive, mass-producible semiconductor device that can be used in these high frequency regions. 2. Description of the Related Art Conventionally, a semiconductor device including a resin mold package and a semiconductor device including a ceramic package have been known. Although resin-molded semiconductor devices can be manufactured relatively inexpensively, they are not suitable for high-frequency semiconductor devices, while ceramic semiconductor devices are suitable for high-frequency semiconductor devices, but are said to be expensive. Therefore, it is required to manufacture a ceramic semiconductor device that can be used in a high frequency region at a relatively low cost.

For example, as shown in FIG. 12, a conventional typical ceramic semiconductor device 1 has a semiconductor chip 3 mounted on a ceramic package base 2, a cap 4 attached to the package base 2, and a hermetic seal. It is made. Such a package base 2
Is a ceramic plate member 5 having a substantially rectangular shape.
And a metallic pattern formed on the surface of the ceramic plate member 5. The metallic pattern has a surface conductive film 6 covering a considerable area of the surface of the ceramic plate member 5;
A plurality of terminal conductive films 6a formed around the ceramic plate member 5 (along each side of the ceramic plate member). An insulating region 9a is provided around each terminal conductive film 6a, and electrically insulates the terminal conductive film 6a on the ceramic plate member 5 from the surface conductive film 6. Usually, a metal lead 8 is attached to the terminal conductive film 6a, and after the semiconductor chip 3 is mounted on the package base 2, wire bonding 7 is performed between the semiconductor chip 3 and the terminal conductive film 6a. ing.

As shown in FIG. 13, a ceramic plate member 5 is manufactured from a green sheet 9. The green sheet 9 is formed by, for example, heating a mixture of alumina powder and a binder at a predetermined temperature and stretching the mixture into a sheet shape, and has an area several dozen times to several hundred times that of the ceramic plate member 5. In FIG. 13, some of the four ceramic plate members 5 are indicated by broken lines. The four ceramic plate members 5 are formed on the green sheet 9 in a repeating pattern. Finally, the ceramic plate member 5 is cut out or cut out of the green sheet 9 along a broken line.

Before the individual ceramic plate members 5 are separated from the green sheet 9, a metallic pattern indicated by hatching is formed on the surface of the green sheet 9. As described above, the metallic pattern includes the surface conductive film 6 including the chip mounting portion of each ceramic plate member 5 and the terminal conductive film 6a at the peripheral portion of each ceramic plate member 5, and as a whole, a considerable portion of the surface of the green sheet 9 Is covered. The insulating region 9a around each terminal conductive film 6a has no metallic pattern and has a structure of a ceramic base.

The metallic pattern includes a thin first layer of paste-like tungsten or molybdenum manganese applied using a mask corresponding to the insulating region 9a, and a second layer formed by nickel plating on the first layer. And layers. Thereafter, a gold layer or the like can be further provided. In order to perform plating, all the metallic patterns on the green sheet 9 are connected. For this reason, it is necessary to prevent the terminal conductive film 6a from being isolated from other portions of the entire metallic pattern. For example, the terminal conductive film 6p of the ceramic plate member 5 located at the upper left of FIG.
Between Some parts 6h metallic pattern, the terminal conductive film 6p and terminal conductive film 6q is continuous with the portion 6h of the metallic pattern. The portion 6h of the metallic pattern is a surplus portion that is not included in each ceramic plate member 5.

[0007] Such a metallic pattern portion 6h
In order to eliminate the problem, for example, it is necessary to arrange the ceramic plate member 5 located at the upper right of FIG. Then, the right terminal conductive film 6q becomes continuous with the left terminal conductive film 6p,
The insulating region 9a completely surrounds the terminal conductive films 6p and 6q,
The terminal conductive films 6p and 6q are isolated from all other metallic pattern portions. Terminal conductive film 6p, 6q
Is isolated, plating cannot be performed. This is shown in FIG.
Terminal conductive film 6a of ceramic plate member 5 located at the upper left of
And the terminal conductive film 6 of the ceramic plate member 5 located thereunder
The same applies to the relationship with a.

[0008]

As described above, in the conventional green sheet 9, since the ceramic plate members 5 are arranged at considerable intervals, the ceramic plate members 5 obtained from one green sheet 9 are provided. And the cost of the package base 2 and the ceramic semiconductor device 1 is high. It is an object of the present invention to provide a method of manufacturing a semiconductor mounting substrate, a package, and a semiconductor device, which can overcome the above problems and reduce costs.

[0009]

Connection substrate according to the present invention, in order to solve the above-mentioned object, on one plane, the surface conductive film 16, the unit insulation provided and the terminal conductive film 16a which is insulated spaced from said surface conductive film A plurality of conductive substrates 10 connected in a plane, and the terminal conductive film 16a in each of the plurality of unit insulating substrates is a surface conductive film 16a of another adjacent unit insulating substrate. Characterized by being directly connected to the peripheral portion of the.

[0010]

In the above construction, a large number of unit insulating substrates (package base portions) are repeatedly formed on one connecting substrate (green sheet). In two adjacent unit insulating substrates, the terminal conductive film of one unit insulating substrate is directly connected to the peripheral portion of the surface conductive film of another adjacent unit insulating substrate. Therefore, the terminal conductive film is not isolated by the insulating region, and all the metallic patterns are connected in the green sheet. Therefore, the metallic pattern can be formed by plating. Since there is no need to form an extra metallic pattern portion between two adjacent unit insulating substrates as in the related art, the number of unit insulating substrates obtained from one green sheet increases, so that the package is increased. The manufacturing cost of the base portion and the semiconductor device using the same can be reduced.

[0011]

FIG. 1 is a view showing a package base portion 10 according to a first embodiment of the present invention. FIG. 2 is a ceramic package using the package base portion (unit insulating substrate) 10 of FIG. 1 as a bottom plate. FIG. 3 is a view showing a semiconductor device 20, and FIG. 3 is a view showing a green sheet (connection substrate) 30 for forming the package base portion 10 of FIG.

As shown in FIGS. 1 and 2, the ceramic semiconductor device 20 has a semiconductor chip 13 mounted on a package base 10, a cap 14 attached to the package base 10, and hermetically sealed. is there. Package base portion 10 has a surface conductive film 16 and the terminal conductive film 16a formed as a metallic pattern on the surface of the ceramic plate member 15. The metal lead 18 is attached to the terminal conductive film 16c formed on the back surface of the ceramic plate member 15 from the terminal conductive film 16a on the surface of the ceramic plate member 15 via the terminal conductive film 16b on the side surface.
Semiconductor chip 13 is mounted on the surface conductive film 16, so that the wire bonding 17 between the semiconductor chip 13 and the terminal conductive film 16a.

The ceramic plate member 15 has a substantially rectangular shape, and the terminal conductive film 16a is
Is formed along the sides of the ceramic plate member 15 at the peripheral portion of the surface of the ceramic plate member 15. Here, the rectangle includes a square. Further, the substantially rectangular shape includes a case where a through hole or the like is provided on each side. In order to electrically insulate the terminal conductive film 16a of the ceramic plate member 15 from the surface conductive film 16, there is an insulating region 19 around each terminal conductive film 16a. The insulating region 19 has no metallic pattern and has a ceramic base material. It is a structure as it is.

In the embodiment shown in FIG. 1, the ceramic plate member 15 has a pair of parallel first and second sides 41, 42.
And another pair of parallel third and fourth sides 43 and 44. Along the first side 41, two terminal conductive films 16a
Are provided, and one terminal conductive film 16 a is provided along each of the other sides 42, 43, 44. One-dot chain line L ₁ is a line passing through the third and the center of the fourth side 43, 44 in parallel to the first and second sides 41, 42. Dashed line L
₂ is parallel to the third and fourth sides 43 and 44 and is the first and second sides.
Is a line passing through the centers of the sides 41 and 42 of FIG.

The first side of the 41 two arranged along the terminal conductive film 16a is a one-dot chain line L ₂ on both sides of the one-dot chain line L ₂ at a position away distance greater than the width of the terminal conductive film 16a. Terminal conductive film 16 arranged along the second side 42
a is on one-dot chain line L _2. That is, the distance from each of the two terminal conductive films 16a arranged along the first side 41 to the third side 43 is determined by the distance from 16a arranged along the second side 42 to the third side 43. Is different from the distance to.

[0016] Similarly, the terminal conductive film 16a positioned along the third side 43 is on one side of the chain line L _1, the terminal conductive film 16a which are arranged along the fourth side 44 is one point the other side of the chain line L _1. That is, the third side 4
From the terminal conductive film 16a arranged along the first side 4 to the first side 4
The distance to 1 is 16a arranged along the fourth side 44
From the distance to the first side 41.

In FIG. 3, a green sheet 30 is formed by heating a mixture of, for example, alumina powder and a binder at a predetermined temperature and stretching the mixture into a sheet shape, and has a large number of ceramic plate members 15. On the green sheet 30, a metallic pattern corresponding to the six semiconductor package base portions 10 (ceramic plate members 15) in FIG. Metallic patterns are shown with hatching for clarity. After the metallic pattern is formed, the green sheet 30 is divided along the broken line by cutting or die cutting, and finally individual package base portions 10 are obtained. The distal end of each insulating region 19 extends to the other package base 10 beyond the cutting line of the package base 10 indicated by the broken line. Therefore, when divided into the individual package bases 10, only the leading end of each insulating region 19 is separated.
Will remain. This is indicated by 19x in FIG.

All the terminal conductive films 16a are formed in the pattern described with reference to FIG. 1, and when viewed from the green sheet 30 in FIG. 3, one side of the ceramic plate member 15 of a certain package base 10 (for example, FIG. 3 of the right side 42) terminal conductive film 16a formed along the ceramic plate member 15 positioned at the upper left, middle ceramic plate member 15 (FIG. 3 <br/> adjacent to the ceramic plate member 1 5 It is directly connected to the peripheral portion of the surface conductive film 16 of the ceramic plate member 15) located at the upper part. This is true for all terminal conductive films 16a arranged along the other sides.

As described above, the terminal conductive film 16a disposed along the first side 41 of each ceramic plate member 15 passes through the terminal conductive film 16a disposed along the second side 42 and the third conductive film 16a. no on sides 43 parallel to the line L ₂ in the same manner, the terminal conductive film 16a positioned along the third side 43, through the fourth side 43 disposed along the terminal conductive film 16a Further, since the plurality of ceramic plate members 15 are not formed on the line L ₁ parallel to the first side 41, even if the plurality of ceramic plate members 15 are formed at adjacent positions in the green sheet 30 in a repeated pattern, the terminal conductive film of the adjacent ceramic plate members 15 is formed. The terminal conductive films 16a are not isolated from each other by the insulating region 19. Therefore, the surplus metallic pattern portion 6 shown in FIG.
Even if there is no h, all the metallic patterns 16 in the green sheet 30 are connected and can be plated. That is, in the plating process, the metallic patterns of all the ceramic plate members 15 can be treated as one electrode. In addition, the terminal conductive film 1 on the outer edge side of the package base portion 10 located at the peripheral edge portion of the green sheet 30
6a is electrically connected by a peripheral conductive region provided on the peripheral edge of the package base portion 10 of the green sheet 30.

FIG. 4 shows the surface conductive film 16 and the terminal conductive film 16.
a includes a plurality of metal layers 45 and 46
It consists of. In the formation of the metallic pattern 16, first, a thin film of paste-like tungsten or molybdenum manganese is applied to the surface of the green sheet 30 using a mask corresponding to the insulating region 19, and becomes the first metal layer 45. At this time, the insulating region 19
Is used, the metal does not adhere to the portion corresponding to the insulating region 19. Then, nickel plating is performed on the first metal layer 45 to form a second metal layer 46.
To form At this time, all the metallic patterns need to be connected. The first metal layer 45
Is, for example, 1000 to 2000 A, and the thickness of the second metal layer 46 is, for example, 2 to 4 μm. then,
Gold plating can be performed on the second metal layer 46.

As described above, according to the present invention, the plurality of ceramic plate members 15 can be disposed immediately adjacent to the green sheet 30, and there is no surplus portion between the plurality of ceramic plate members 15. Thereby, the number of ceramic plate members 15 obtained from one green sheet 30 increases, and the manufacturing cost of one ceramic plate member 15 can be reduced.

FIG. 5 is a view showing a green sheet 30 according to a second embodiment of the present invention. This green sheet 30 is shown in FIG.
The green sheet 30 shown in FIG.
Further, in FIG. 5, the distance from the terminal conductive film 16a disposed along the first side 41 to the third side 43 is the distance from the terminal conductive film 16a disposed along the second side 42 to the third conductive film 16a. 3 is different from the distance to the side 43 and the second side 4
4 to the fourth side 4 from the terminal conductive film 16a
It is equal to the distance to 4. Similarly, the third side 43
From the terminal conductive film 16a disposed along the first side 41
Is different from the distance to the first side 41 of the terminal conductive film 16a arranged along the fourth side 44, and is equal to the distance to the second side 42.

That is, the terminal conductive films 16a are arranged point-symmetrically at the center point of each package base portion 10. Thereby, the metal leads 18 are connected to the package base 1.
0, the semiconductor package base 10
It is not necessary to check whether or not is set in the correct direction, and the steps such as inspection can be simplified. For example, FIG.
FIG. 5 is a view showing a state where the package base 10 (ceramic plate member 15) is assembled to a lead frame 70 having metal leads 18. The package base 10 is shown on the back side of FIG. The package base 10 (ceramic plate member 15) can be mounted at the position shown in FIG. 6, or can be mounted at a position rotated by 180 degrees from the position shown in FIG. In any case, the package base portion 10 (the ceramic plate member 15) is correctly arranged on the lead frame 70. In FIG. 6, the lead frame 70 has a support plate 71 in addition to the metal leads 18 and the support arm 7
2 extends from the support plate 71 toward the outer frame in parallel with the metal leads 18.

The terminal conductive film 16b on the side surface of the ceramic plate member 15 can be formed after the green sheet 30 is divided. Further, the terminal conductive film 16b on the side surface of the ceramic plate member 15 can be formed directly on the green sheet 30 as shown in FIG. FIG. 7 is a diagram illustrating the formation of the terminal conductive film 16b on the side surface on the green sheet 30. This green sheet 30 has the above-described features of the green sheet 30 shown in FIG. further,
The green sheet 30 has a through hole 57 at a position passing through each terminal conductive film 16a on a dividing line of the ceramic plate member 15 indicated by a broken line. This through hole 57
Is provided before the plating process of the metallic pattern, and is filled with tungsten or molybdenum manganese. Therefore, when the metallic pattern is formed on the surface of the ceramic plate member 15 by plating, the terminal conductive film 16b on the side surface of the ceramic plate member 15 is also plated simultaneously, and the terminal conductive film 16a on the surface of the ceramic plate member 15 and the terminal conductive film on the side surface. It is continuous with the conductive film 16b. Further, the metallic pattern on the back surface of the ceramic plate member 15 is formed in the same manner as the metallic pattern on the front surface of the ceramic plate member 15. The metallic pattern on the back surface of the ceramic plate member 15 also includes a surface conductive film and a terminal conductive film 16c. The terminal conductive film 16c is formed at the same position as the terminal conductive film 16a on the surface of the ceramic plate member 15, and the through hole 57 is formed. It passes through the terminal conductive film 16a on the front surface and the terminal conductive film 16c on the rear surface. Therefore, the metallic patterns on both the front and back surfaces of the ceramic plate member 15 can be formed at the same time, and the terminal conductive film 16a on the front surface and the terminal conductive film 16c on the rear surface are conducted through the terminal conductive film 16b on the side surface.

FIG. 8 is a view showing a leadless chip carrier 60 formed according to a third embodiment of the present invention. The leadless chip carrier 60 includes the semiconductor package base 10 as a kind of package, and does not have the metal leads 18 of FIG. Semiconductor package base 10
Is mounted on a carrier 61 such as a printed circuit board having solder bumps 62. The semiconductor package base portion 10 is provided with a metallic pattern on the surface of the ceramic plate member 15, the terminal conductive film 16c on the back surface of the ceramic plate member 15 is placed on the solder bump 62, and is connected by melting the solder bump. .

FIG. 9 is a view showing a green sheet 30 according to a fourth embodiment of the present invention. This green sheet 30 is shown in FIG.
The green sheet 30 shown in FIG.
In FIG. 9, the ceramic plate member 15 has a square shape, and the terminal conductive film 1 on each side 41, 42, 43, 44 is formed.
6a has the above-mentioned point-symmetric arrangement, and the same pattern appears even when the ceramic plate member 15 is rotated by 90 degrees. Therefore, the metal leads 18
When the semiconductor chip 13 is mounted on the package base portion 10 and when the semiconductor chip 13 is mounted on the semiconductor package base portion 10, the setting is facilitated.

FIG. 10 is a view showing a green sheet 30 according to a fifth embodiment of the present invention. The green sheet 30 has the above-described features of the green sheet 30 shown in FIG. 1 and has a plurality of terminal conductive films 16a along each of the sides 41, 42, 43, and 44, respectively. The terminal conductive film 16a on each side is arranged so as not to be on the same line as the terminal conductive film 16a arranged along the opposite side as described above.

FIG. 11 is a view showing a green sheet 30 according to a sixth embodiment of the present invention. This green sheet 30
Ceramic plate member 1 of each semiconductor package base portion 10
5 only on the pair of sides 5 (first and second sides 41 and 42 in the upper left ceramic plate member 15 in FIG. 11).
6a, and there is no terminal conductive film 16a on a pair of sides (the third and fourth sides 43 and 44 in the upper left ceramic plate member 15 in FIG. 11). The terminal conductive films 16a on the pair of sides 41 and 42 are both on a line parallel to the sides 41 and 42.

The ceramic plate members 15 of the adjacent semiconductor package base portions 10 are repeatedly arranged in a matrix with the corresponding sides rotated by 90 degrees. For example,
The pattern of the terminal conductive film 16 a on the first side 41 of the upper left ceramic plate member 15 in FIG. 11 is equal to the pattern of the terminal conductive film 16 a on the third side 43 of the upper right ceramic plate member 15. Also in the green sheet 30, the terminal conductive film 16a formed along one side of the ceramic plate member 15 of the certain package base portion 10 (for example, the right side 42 of the ceramic plate member 15 located at the upper left of FIG. 11) is formed. The ceramic plate member 1 adjacent to the ceramic plate member 15
5 (the ceramic plate member 1 located at the upper right side in FIG. 11)
5) It is directly connected to the peripheral portion of the surface conductive film 16.

Accordingly, even if a plurality of ceramic plate members 15 are formed at adjacent positions in a repetitive pattern on the green sheet 30, the terminal conductive films 16a of the adjacent ceramic plate members 15 are not continuous with each other. The terminal conductive film 16a is not isolated by the insulating region 19. Therefore, plating can be performed.

[0031]

As described above, according to the present invention,
The manufacturing cost of the semiconductor mounting connection substrate and the semiconductor device using the same can be reduced.

[Brief description of the drawings]

FIG. 1 is a perspective view showing a package base for a semiconductor according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view showing a semiconductor device using the semiconductor package base of FIG. 1;

FIG. 3 is a plan view showing a green sheet for producing the semiconductor package base portion of FIG. 1;

FIG. 4 is a sectional view taken along the line IV-IV in FIG. 3;

FIG. 5 is a plan view illustrating a green sheet according to a second embodiment of the present invention.

6 is a plan view showing a state where the semiconductor package base portion of FIG. 5 is attached to a lead frame.

FIG. 7 is a plan view showing the formation of the terminal conductor layer on the side surface.

FIG. 8 is a side view showing a leadless chip carrier according to a third embodiment of the present invention.

FIG. 9 is a plan view illustrating a part of a green sheet according to a fourth embodiment of the present invention.

FIG. 10 is a plan view illustrating a part of a green sheet according to a fifth embodiment of the present invention.

FIG. 11 is a plan view illustrating a part of a green sheet according to a sixth embodiment of the present invention.

FIG. 12 is a sectional view showing a conventional ceramic semiconductor device.

FIG. 13 is a plan view showing a conventional green sheet.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 ... Package base part for semiconductors 13 ... Semiconductor chip 15 ... Ceramic plate member 16 ... Surface conductive film 16a ... Terminal conductive film 18 ... Metal lead 19 ... Insulation area 20 ... Semiconductor device 30 ... Green sheet 60 ... Leadless chip carrier

Continuation of the front page (56) References JP-A-58-137237 (JP, A) JP-A-58-86748 (JP, A) JP-A-2-241403 (JP, A) (58) Fields investigated (Int) .Cl. ⁷ , DB name) H01L 23/13 H05K 3/00

Claims (9)

(57) [Claims] A surface conductive film and the surface conductive film are provided on one plane.
Conductive film unit insulating base plate provided with a terminal conductive layer which is insulated apart from the, there <br/> a linking group plate formed by planarly multiple connections, the plurality of unit insulating substrate The connection substrate, wherein each of the terminal conductive films is directly connected to a peripheral portion of a surface conductive film of another adjacent unit insulating substrate. 2. The connection substrate according to claim 1, wherein a plurality of the terminal conductive films are provided on one side of a peripheral portion of the unit insulating substrate. 3. A peripheral conductive region on the periphery of the connection substrate is provided, the terminal conductive film of each unit insulative substrate positioned on the periphery of the connection substrate is formed by electrically connected by the peripheral conductive region connection substrate according to 請 Motomeko 1 or 2 shall be the wherein the. 4. A plating film formed by supplying a current to the surface conductive film, the terminal conductive film, or the peripheral conductive region on a surface of the surface conductive film and the terminal conductive film in the connection substrate. The connecting substrate according to claim 3 , wherein the connecting substrate is provided. 5. A connecting substrate in which the surface conductive film and the terminal conductive film are provided on both front and back surfaces, and the positions of the conductive terminal conductive films on the front and back surfaces are the same at the periphery of the unit insulating substrate. The connecting substrate according to any one of claims 1 to 4, wherein: 6. A through hole that penetrates through an insulating plate is provided at a position where at least a part of a terminal conductive film or a surface conductive film is provided on a peripheral portion of a unit insulating substrate, and an inner wall of the through hole is provided. The connecting substrate according to claim 5, wherein the conductive film is formed, and the terminal conductive films on the front and back are electrically conducted. 7. The unit insulating substrate is substantially square, and another unit insulating substrate adjacent to one unit insulating substrate is a substrate having a conductive film pattern obtained by rotating itself by 90 degrees. 7. One of claims 1 to 6, characterized in that:
Item 6. The connecting substrate according to item 1. 8. A said end Koshirube conductive film unit insulating substrate <br/> formed by dividing the connection substrate according to any one of claims 1 to 7, mounted external connection terminal It was characterized by having a base portion and to Rupa package. 9. A plating film on a surface of the surface conductive film and the terminal conductive film by supplying a current to the surface conductive film, the terminal conductive film, or the peripheral conductive region of the connection substrate according to claim 3. Forming the connection substrate into unit insulating substrates; forming the external connection terminals on the terminal conductive films of the divided unit insulating substrates; Fixing a semiconductor chip on the surface conductive film.