JPH07154030A - 発光素子 - Google Patents
発光素子Info
- Publication number
- JPH07154030A JPH07154030A JP6257361A JP25736194A JPH07154030A JP H07154030 A JPH07154030 A JP H07154030A JP 6257361 A JP6257361 A JP 6257361A JP 25736194 A JP25736194 A JP 25736194A JP H07154030 A JPH07154030 A JP H07154030A
- Authority
- JP
- Japan
- Prior art keywords
- reflector
- layer
- active layer
- light emitting
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 48
- 230000005855 radiation Effects 0.000 claims abstract description 36
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 27
- 230000003287 optical effect Effects 0.000 claims abstract description 20
- 238000004020 luminiscence type Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 230000007704 transition Effects 0.000 claims abstract description 5
- 238000005401 electroluminescence Methods 0.000 claims abstract 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 49
- 230000005284 excitation Effects 0.000 claims description 37
- 238000010521 absorption reaction Methods 0.000 claims description 21
- 239000011521 glass Substances 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 19
- 229910021332 silicide Inorganic materials 0.000 claims description 11
- 238000005424 photoluminescence Methods 0.000 claims description 10
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000002310 reflectometry Methods 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- SITVSCPRJNYAGV-UHFFFAOYSA-L tellurite Chemical compound [O-][Te]([O-])=O SITVSCPRJNYAGV-UHFFFAOYSA-L 0.000 claims description 3
- 229910052691 Erbium Inorganic materials 0.000 claims description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 2
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical group [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 2
- 239000005383 fluoride glass Substances 0.000 claims description 2
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 2
- 150000002602 lanthanoids Chemical class 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 230000010355 oscillation Effects 0.000 claims description 2
- 239000005360 phosphosilicate glass Substances 0.000 claims 2
- FGUJWQZQKHUJMW-UHFFFAOYSA-N [AlH3].[B] Chemical compound [AlH3].[B] FGUJWQZQKHUJMW-UHFFFAOYSA-N 0.000 claims 1
- WNKZEPQRJPJVSU-UHFFFAOYSA-N [P].[B].[P] Chemical compound [P].[B].[P] WNKZEPQRJPJVSU-UHFFFAOYSA-N 0.000 claims 1
- 230000002269 spontaneous effect Effects 0.000 abstract description 4
- 238000001228 spectrum Methods 0.000 description 9
- 150000002910 rare earth metals Chemical class 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- -1 lanthanum rare earth ions Chemical class 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 239000013307 optical fiber Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000001748 luminescence spectrum Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910005540 GaP Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000000103 photoluminescence spectrum Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005274 electronic transitions Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 238000000985 reflectance spectrum Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/0632—Thin film lasers in which light propagates in the plane of the thin film
- H01S3/0635—Thin film lasers in which light propagates in the plane of the thin film provided with a periodic structure, e.g. using distributed feed-back, grating couplers
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7706—Aluminates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/77062—Silicates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1608—Solid materials characterised by an active (lasing) ion rare earth erbium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1628—Solid materials characterised by a semiconducting matrix
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/17—Solid materials amorphous, e.g. glass
- H01S3/176—Solid materials amorphous, e.g. glass silica or silicate glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- High Energy & Nuclear Physics (AREA)
- General Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Lasers (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/129,528 US5363398A (en) | 1993-09-30 | 1993-09-30 | Absorption resonant rare earth-doped micro-cavities |
| US129528 | 1993-09-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07154030A true JPH07154030A (ja) | 1995-06-16 |
Family
ID=22440440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6257361A Pending JPH07154030A (ja) | 1993-09-30 | 1994-09-28 | 発光素子 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5363398A (OSRAM) |
| EP (1) | EP0646999B1 (OSRAM) |
| JP (1) | JPH07154030A (OSRAM) |
| KR (1) | KR950010255A (OSRAM) |
| CA (1) | CA2127614A1 (OSRAM) |
| DE (1) | DE69402145T2 (OSRAM) |
| HK (1) | HK77397A (OSRAM) |
| TW (1) | TW287325B (OSRAM) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002536708A (ja) * | 1999-02-10 | 2002-10-29 | コミツサリア タ レネルジー アトミーク | 光学用シリコン層を基板上に形成する方法および該方法による光学素材の製造方法 |
| JP2006261150A (ja) * | 2005-03-15 | 2006-09-28 | Ricoh Co Ltd | 垂直共振器型面発光半導体レーザ装置および発光システムおよび光伝送システム |
| JP2014086582A (ja) * | 2012-10-24 | 2014-05-12 | Stanley Electric Co Ltd | 発光素子と蛍光体を用いた発光装置 |
Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6404127B2 (en) | 1993-07-20 | 2002-06-11 | University Of Georgia Research Foundation, Inc. | Multi-color microcavity resonant display |
| US6614161B1 (en) | 1993-07-20 | 2003-09-02 | University Of Georgia Research Foundation, Inc. | Resonant microcavity display |
| US5804919A (en) * | 1994-07-20 | 1998-09-08 | University Of Georgia Research Foundation, Inc. | Resonant microcavity display |
| US5469018A (en) * | 1993-07-20 | 1995-11-21 | University Of Georgia Research Foundation, Inc. | Resonant microcavity display |
| EP0650200B1 (en) * | 1993-10-20 | 1999-03-10 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno | Solid state electro-luminescent device and process for fabrication thereof |
| US5478658A (en) * | 1994-05-20 | 1995-12-26 | At&T Corp. | Article comprising a microcavity light source |
| JPH0936474A (ja) * | 1995-07-14 | 1997-02-07 | Mitsubishi Electric Corp | 半導体レーザ及びその製造方法 |
| WO1998026316A1 (en) * | 1996-12-13 | 1998-06-18 | Massachusetts Institute Of Technology | Tunable microcavity using nonlinear materials in a photonic crystal |
| US5835521A (en) * | 1997-02-10 | 1998-11-10 | Motorola, Inc. | Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication |
| US6097041A (en) * | 1998-08-24 | 2000-08-01 | Kingmax Technology Inc. | Light-emitting diode with anti-reflector |
| US20040175901A1 (en) * | 1999-02-10 | 2004-09-09 | Commissariat A L'energie Atomique | Method for forming an optical silicon layer on a support and use of said method in the production of optical components |
| US7123359B2 (en) * | 1999-05-17 | 2006-10-17 | Arrowhead Center, Inc. | Optical devices and methods employing nanoparticles, microcavities, and semicontinuous metal films |
| US6608716B1 (en) | 1999-05-17 | 2003-08-19 | New Mexico State University Technology Transfer Corporation | Optical enhancement with nanoparticles and microcavities |
| WO2001005001A1 (en) | 1999-07-12 | 2001-01-18 | Massachusetts Institute Of Technology | Resonant microcavities |
| US6741628B2 (en) * | 2000-03-09 | 2004-05-25 | California Institute Of Technology | Micro-cavity laser |
| US7058245B2 (en) * | 2000-04-04 | 2006-06-06 | Waveguide Solutions, Inc. | Integrated optical circuits |
| WO2001091254A2 (en) * | 2000-05-22 | 2001-11-29 | Massachusetts Institute Of Technology | Microcavity amplifiers |
| US6734453B2 (en) * | 2000-08-08 | 2004-05-11 | Translucent Photonics, Inc. | Devices with optical gain in silicon |
| US20020163952A1 (en) * | 2001-03-01 | 2002-11-07 | Wen-Yen Hwang | VCSEL with single lasing-reflectivity peak reflector |
| EP1298461A1 (en) * | 2001-09-27 | 2003-04-02 | Interuniversitair Microelektronica Centrum Vzw | Distributed Bragg reflector comprising GaP and a semiconductor resonant cavity device comprising such DBR |
| US7319709B2 (en) | 2002-07-23 | 2008-01-15 | Massachusetts Institute Of Technology | Creating photon atoms |
| JP2007527553A (ja) * | 2004-03-01 | 2007-09-27 | アプライド・マテリアルズ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング・ウント・コンパニー・コマンディートゲゼルシャフト | ファブリ・ペローフィルタを備えた基板およびフィルタを基板に被着するための方法 |
| TW200603401A (en) * | 2004-04-07 | 2006-01-16 | Nl Nanosemiconductor Gmbh | Optoelectronic device based on an antiwaveguiding cavity |
| US20060140239A1 (en) * | 2004-04-23 | 2006-06-29 | Negro Luca D | Silicon rich nitride CMOS-compatible light sources and Si-based laser structures |
| US7310454B2 (en) | 2004-05-24 | 2007-12-18 | Massachusetts Institute Of Technology | Photonic bandgap modulator, amplifier, demux, and TDM devices |
| US7846391B2 (en) | 2006-05-22 | 2010-12-07 | Lumencor, Inc. | Bioanalytical instrumentation using a light source subsystem |
| US7483212B2 (en) * | 2006-10-11 | 2009-01-27 | Rensselaer Polytechnic Institute | Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same |
| TW200834969A (en) * | 2007-02-13 | 2008-08-16 | Epistar Corp | Light-emitting diode and method for manufacturing the same |
| US7709811B2 (en) | 2007-07-03 | 2010-05-04 | Conner Arlie R | Light emitting diode illumination system |
| US8098375B2 (en) | 2007-08-06 | 2012-01-17 | Lumencor, Inc. | Light emitting diode illumination system |
| JP5058939B2 (ja) * | 2007-11-27 | 2012-10-24 | キヤノン株式会社 | 面発光レーザ、該面発光レーザによって構成される光学機器 |
| CN101382604B (zh) * | 2008-10-22 | 2010-06-02 | 中国科学院上海技术物理研究所 | 单一组分钛酸锶钡光学微腔及构筑方法 |
| US8242462B2 (en) | 2009-01-23 | 2012-08-14 | Lumencor, Inc. | Lighting design of high quality biomedical devices |
| TWM372566U (en) | 2009-05-12 | 2010-01-11 | Tyco Electronics Holdings Bermuda No 7 Ltd | Electrical connector |
| US8466436B2 (en) | 2011-01-14 | 2013-06-18 | Lumencor, Inc. | System and method for metered dosage illumination in a bioanalysis or other system |
| US8389957B2 (en) | 2011-01-14 | 2013-03-05 | Lumencor, Inc. | System and method for metered dosage illumination in a bioanalysis or other system |
| US9642515B2 (en) | 2012-01-20 | 2017-05-09 | Lumencor, Inc. | Solid state continuous white light source |
| US9217561B2 (en) | 2012-06-15 | 2015-12-22 | Lumencor, Inc. | Solid state light source for photocuring |
| US9335267B2 (en) * | 2012-07-09 | 2016-05-10 | The United States Of America As Represented By The Secretary Of The Army | Near-IR laser-induced vibrational overtone absorption systems and methods for material detection |
| US9337622B2 (en) * | 2014-07-18 | 2016-05-10 | Wisconsin Alumni Research Foundation | Compact distributed bragg reflectors |
| US10122153B2 (en) | 2016-08-29 | 2018-11-06 | International Business Machines Corporation | Resonant cavity strained group III-V photodetector and LED on silicon substrate and method to fabricate same |
| CN114792929A (zh) * | 2021-11-18 | 2022-07-26 | 埃特曼(北京)半导体技术有限公司 | 激光器制备方法及激光器 |
| US12457824B2 (en) * | 2022-03-28 | 2025-10-28 | Asahi Kasei Microdevices Corporation | Infrared optical device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4081763A (en) * | 1973-01-04 | 1978-03-28 | Natalya Andreevna Vlasenko | Electroluminescent laser |
| US5202786A (en) * | 1991-09-12 | 1993-04-13 | The United States Of America As Represented By The Secretary Of The Navy | Optical switching devices |
| US5226053A (en) * | 1991-12-27 | 1993-07-06 | At&T Bell Laboratories | Light emitting diode |
| US5237576A (en) * | 1992-05-05 | 1993-08-17 | At&T Bell Laboratories | Article comprising an optical fiber laser |
| US5249195A (en) * | 1992-06-30 | 1993-09-28 | At&T Bell Laboratories | Erbium doped optical devices |
-
1993
- 1993-09-30 US US08/129,528 patent/US5363398A/en not_active Expired - Lifetime
-
1994
- 1994-07-06 TW TW083106168A patent/TW287325B/zh not_active IP Right Cessation
- 1994-07-07 CA CA002127614A patent/CA2127614A1/en not_active Abandoned
- 1994-09-21 EP EP94306926A patent/EP0646999B1/en not_active Expired - Lifetime
- 1994-09-21 DE DE69402145T patent/DE69402145T2/de not_active Expired - Lifetime
- 1994-09-28 JP JP6257361A patent/JPH07154030A/ja active Pending
- 1994-09-29 KR KR1019940024736A patent/KR950010255A/ko not_active Withdrawn
-
1997
- 1997-06-05 HK HK77397A patent/HK77397A/en not_active IP Right Cessation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002536708A (ja) * | 1999-02-10 | 2002-10-29 | コミツサリア タ レネルジー アトミーク | 光学用シリコン層を基板上に形成する方法および該方法による光学素材の製造方法 |
| JP2006261150A (ja) * | 2005-03-15 | 2006-09-28 | Ricoh Co Ltd | 垂直共振器型面発光半導体レーザ装置および発光システムおよび光伝送システム |
| JP2014086582A (ja) * | 2012-10-24 | 2014-05-12 | Stanley Electric Co Ltd | 発光素子と蛍光体を用いた発光装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US5363398A (en) | 1994-11-08 |
| EP0646999A1 (en) | 1995-04-05 |
| KR950010255A (ko) | 1995-04-26 |
| DE69402145T2 (de) | 1997-09-18 |
| TW287325B (OSRAM) | 1996-10-01 |
| CA2127614A1 (en) | 1995-03-31 |
| HK77397A (en) | 1997-06-13 |
| EP0646999B1 (en) | 1997-03-19 |
| DE69402145D1 (de) | 1997-04-24 |
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