JPH0714961A - Manufacture of resin-sealed semiconductor device - Google Patents
Manufacture of resin-sealed semiconductor deviceInfo
- Publication number
- JPH0714961A JPH0714961A JP15822193A JP15822193A JPH0714961A JP H0714961 A JPH0714961 A JP H0714961A JP 15822193 A JP15822193 A JP 15822193A JP 15822193 A JP15822193 A JP 15822193A JP H0714961 A JPH0714961 A JP H0714961A
- Authority
- JP
- Japan
- Prior art keywords
- outer lead
- resin
- lead
- semiconductor device
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、半導体素子を覆う樹脂
層から外部に導出するアウタ−リ−ドの成形方法に係わ
り、特にアウタ−リ−ドの曲げ工程に好適する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of molding an outer lead which is led out from a resin layer covering a semiconductor element, and is particularly suitable for a bending process of the outer lead.
【0002】[0002]
【従来の技術】半導体素子の組立方式には、いわゆるタ
ブかリ−ドフレ−ムを利用する方法が知られており、後
者も依然として多用されている。リ−ドフレ−ムの材質
には鉄または鉄ニッケル合金、銅や銅合金更にこれらの
材料をクラッドした金属を利用し、これを所定の形状に
する。この所定の形状は、プレスやエッチング工程によ
り仕上げるが、集積度に対応してリ−ド数を増減する
し、ビン数が増えるにつれて厚さを薄くする品種も多
い。このようなリ−ドフレ−ムによる組立方式では、い
わゆるマウント工程、ボンディング工程に続いてトラン
スファモ−ルド(Transfer Mold) による樹脂封止工程を
経て、いわゆるベンディング(Bending) 工程即ち曲げ工
程ならびに外装メッキ工程更に、特性検査による選別を
行って出荷する。更にリ−ドフレ−ムに形成するリ−ド
即ちインナ−リ−ドは、封止樹脂外に導出したものをア
ウタ−リ−ドと別名称とし、封止樹脂により構成する外
囲器としてSOP,QFP などの型が知られている。2. Description of the Related Art As a method of assembling a semiconductor device, a method utilizing a so-called tab or lead frame is known, and the latter is still widely used. As the material of the lead frame, iron or iron-nickel alloy, copper or copper alloy, and a metal clad with these materials are used and formed into a predetermined shape. This predetermined shape is finished by a pressing or etching process, but there are many types in which the number of leads is increased or decreased according to the degree of integration and the thickness is reduced as the number of bins increases. In such an assembly method using a lead frame, a so-called mounting step, a bonding step, a resin molding step by a transfer mold, a so-called bending step, that is, a bending step and an outer plating are performed. Process Further, the product is sorted by characteristic inspection before shipping. Further, the lead or inner lead formed on the lead frame is named as an outer lead, which is led out to the outside of the sealing resin. , QFP and other types are known.
【0003】一方樹脂封止型半導体装置の利用分野とし
ては表面実装型組立方式があり、これを採用する電子機
器の種類に対応して、アウタ−リ−ドも色々な角度に成
形することが要求されている。On the other hand, as a field of application of the resin-encapsulated semiconductor device, there is a surface mounting type assembling method, and the outer lead can be molded at various angles according to the type of electronic equipment adopting the same. Is required.
【0004】この曲げ工程の説明に利用する図1は、樹
脂封止型半導体装置の要部を示す上面図であり、図2は
その側面図である。FIG. 1 used for explaining the bending step is a top view showing a main part of a resin-sealed semiconductor device, and FIG. 2 is a side view thereof.
【0005】前記のように外界の雰囲気から半導体素子
を保護する樹脂封止層1は、図1に示すように複数のア
ウタ−リ−ド2を外部に導出して電子機器との接続に備
えるが、図2にあるように曲げる角度が大きい場合もあ
り、その上終端付近を90°折曲げて電子機器に挿入で
きるようにする。As described above, the resin sealing layer 1 for protecting the semiconductor element from the external atmosphere, as shown in FIG. 1, leads out a plurality of outer leads 2 to prepare for connection with electronic equipment. However, as shown in FIG. 2, the bending angle may be large, and the vicinity of its upper end should be bent by 90 ° so that it can be inserted into an electronic device.
【0006】またリ−ドフレ−ムでは、各リ−ドの機械
的強度を保持し、その方向性を維持するために、いわゆ
るタイバ−別名連結細条3をリ−ド方向に直交する方向
に設置し、その設置位置を封止樹脂から比較的近い各ア
ウタ−リ−ド部分とする。Further, in the lead frame, in order to maintain the mechanical strength of each lead and maintain its directionality, a so-called tie bar, which is also called a connecting strip 3, is arranged in a direction orthogonal to the lead direction. It is installed and the installation position is set to each outer lead portion relatively close to the sealing resin.
【0007】また成形工程には、金型を構成する上型ポ
ンチと下型ダイを使用し、アウタ−リ−ド2に形成する
角度に対応した曲線部を上型ポンチと下型ダイに雄雌の
関係に形成し、上型ポンチを下降して下型ダイに配置す
るアウタ−リ−ド2に所定の曲りを形成する。In the molding process, an upper die punch and a lower die which form a die are used, and a curved portion corresponding to an angle formed on the outer lead 2 is formed on the upper die and the lower die. A predetermined bend is formed on the outer lead 2 which is formed in a female relationship, and the upper die punch is lowered to be placed on the lower die.
【0008】このような一連の曲げ工程即ち成形工程に
より形成する角度が大きい時には、一度小さく曲げてか
らもう一回曲げて所定の角度にする方法が採られてい
る。更にこの成形工程は、連結細条3を切断後行うのが
通例である。When the angle formed by such a series of bending steps, that is, the forming step is large, a method is adopted in which the angle is made small once and then made another predetermined angle. Further, this forming step is usually performed after cutting the connecting strip 3.
【0009】[0009]
【発明が解決しようとする課題】このように金型を構成
する上型ポンチと下型ダイを利用する曲げ工程によりア
ウタ−リ−ドを大きい角度に成形するに際しては、連結
細条3を切断除去後に行うのが通例である。しかし、ア
ウタ−リ−ドがこれに交差する横方向に曲がってしまい
方向性が悪化する頻度が大きい。When the outer lead is formed at a large angle by the bending process using the upper die punch and the lower die forming the die as described above, the connecting strip 3 is cut. It is customary to do this after removal. However, the outer lead is bent in the lateral direction crossing the outer lead, and the directionality is often deteriorated.
【0010】本発明はこのような事情により成されたも
ので、アウタ−リ−ドの方向性を良好に維持できる樹脂
封止型半導体装置の製造方法を提供する。The present invention has been made under the above circumstances, and provides a method of manufacturing a resin-sealed semiconductor device capable of maintaining the directionality of the outer lead in a good condition.
【0011】[0011]
【課題を解決するための手段】金属製の支持体に半導体
素子をマウントする工程と,この金属製の支持体に設置
する複数のインナ−リ−ドに対して交差する方向に設け
る金属製の連結細条によってお互いを接続する工程と,
このインナ−リ−ドと前記半導体素子を電気的に接続す
る工程と,前記半導体素子を封止樹脂層で覆って複数の
アウタ−リ−ドを外部に導出する工程と,前記連結細条
と封止樹脂層間に位置するアウタ−リ−ド部分を曲げる
成形工程と,この工程後に前記連結細条を除去する工程
とに本発明に係わる樹脂封止型半導体装置用アウタ−リ
−ドの成形方法の特徴がある。A process of mounting a semiconductor element on a metal support, and a metal support provided in a direction intersecting a plurality of inner leads installed on the metal support. The process of connecting each other by connecting strips,
A step of electrically connecting the inner lead and the semiconductor element; a step of covering the semiconductor element with a sealing resin layer to lead out a plurality of outer leads to the outside; Molding of an outer lead for a resin-sealed semiconductor device according to the present invention in a molding step of bending an outer lead portion located between sealing resin layers and a step of removing the connecting strips after this step. There is a feature of the method.
【0012】[0012]
【作用】このように本発明のアウタ−リ−ドの成形方法
では連結細条と接続した状態のまま行いその後に連結細
条を除去する手法を採っているので、アウタ−リ−ドの
成形角度が大きくてもその方向性を損なわずに所定の方
向が維持できる。As described above, the outer lead molding method of the present invention employs a method of removing the connecting strip after the connecting strip is connected to the connecting strip, so that the outer lead is formed. Even if the angle is large, the predetermined direction can be maintained without impairing the directionality.
【0013】[0013]
【実施例】本発明に係わる実施例を図3乃至図10を参
照して説明する。図3乃至図8は一連の工程を明らかに
し、図9はアウタ−リ−ドに行う成形工程後の拡大図、
また図10はこれらの実施例により完成する樹脂封止型
半導体装置の外観図である。Embodiments of the present invention will be described with reference to FIGS. 3 to 8 show a series of steps, and FIG. 9 is an enlarged view after the molding step performed on the outer lead,
Further, FIG. 10 is an external view of a resin-sealed semiconductor device completed by these examples.
【0014】前記樹脂封止型半導体装置では、機種によ
り適用するリ−ドフレ−ムの型を選定し、材質には鉄ま
たは鉄ニッケル合金、銅や銅合金更にこれらの材料をク
ラッドした金属を、プレス工程やエッチング工程により
所定の形状として利用する。また半導体素子の集積度に
応じてリ−ド数を増減し、ピン数が増えるにつれて厚さ
を薄くすることが多い。このようなリ−ドフレ−ムによ
る組立方式では、いわゆるマウント工程、ボンディング
工程に続いての樹脂封止工程を経て、いわゆる成形工程
を行う。In the resin-sealed semiconductor device, the type of lead frame to be applied is selected depending on the model, and the material is iron or iron-nickel alloy, copper or copper alloy, and a metal clad with these materials, It is used as a predetermined shape by a pressing process or an etching process. In addition, the number of leads is increased or decreased in accordance with the degree of integration of semiconductor elements, and the thickness is often reduced as the number of pins increases. In such an assembly method using a lead frame, a so-called molding step is performed after a so-called mounting step, a bonding step and a resin sealing step.
【0015】表面実装型として例えば電子機器に利用す
る樹脂封止型半導体装置にあっては、自動挿入に備えて
アウタ−リ−ドに成形工程を行うが、その角度は使用者
の要求により大小である。In the case of a resin-sealed type semiconductor device used for electronic equipment as a surface mount type, a molding process is performed on the outer lead in preparation for automatic insertion, but the angle is large or small depending on the user's request. Is.
【0016】本発明方法では、小さい角度や大きい角度
の成形工程を行うのに好適するもので、樹脂封止工程を
終えた樹脂封止型半導体装置の要部を図3に示す。図に
は直方体の封止樹脂層10の一面から導出するアウタ−
リ−ド11を連結細条12により接続した状態を明らか
にする。またアウタ−リ−ド2に形成する角度に対応し
た曲線部を雄雌の関係で形成した上型ポンチと下型ダイ
1(いずれも図示せず)を準備し、下型ダイに図3に示
すアウタ−リ−ド11を配置後、下降した上型ポンチに
より偶数番目のアウタ−リ−ド11を押圧して図4に示
すようにa部分を約30度に曲げてから、夫々を連結細
条12から切断し、その上面図を図5に明らかにした。
なお図3、5、6及び8のアウタ−リ−ド11にその長
手方向に交差する方向に記載した線は、夫々に施す成形
工程の行われるおおよその位置を示した。The method of the present invention is suitable for carrying out a molding process with a small angle or a large angle, and FIG. 3 shows a main part of a resin-sealed semiconductor device after the resin-sealing process. In the figure, an outer member is drawn from one surface of the rectangular parallelepiped sealing resin layer 10.
The state where the leads 11 are connected by the connecting strips 12 will be clarified. Further, an upper die punch having a curved portion corresponding to an angle formed on the outer lead 2 in a male-female relationship and a lower die 1 (neither are shown) are prepared, and the lower die is shown in FIG. After arranging the outer lead 11 as shown, the even-numbered outer lead 11 is pressed by the lowered upper die punch to bend the portion a to about 30 degrees as shown in FIG. The strip 12 was cut and its top view is shown in FIG.
The lines shown in FIGS. 3, 5, 6 and 8 in the direction intersecting the longitudinal direction of the outer lead 11 indicate the approximate positions where the molding process is performed.
【0017】次に図7に示すようにこの成形工程後アウ
タ−リ−ド11の先端付近bには、その直線方向に対し
てほぼ90度成形工程を行って、表面実装時の例えば電
子機器への挿入に備える。Next, as shown in FIG. 7, a molding step of about 90 degrees with respect to the linear direction is performed near the tip b of the outer lead 11 after this molding step, for example, for electronic equipment during surface mounting. Ready for insertion.
【0018】次に奇数番目のアウタ−リ−ド11のc部
分に対して、図7に明らかにするようによりa部分より
深い成形工程を行ってから連結細条12を切断して、図
8のような樹脂封止型半導体装置を得る。また前記のよ
うに先端部分bにも90度に曲げる成形工程を行って、
表面実装時例えば電子機器への挿入に備える。Next, as shown in FIG. 7, the odd-numbered outer lead 11 is subjected to a deeper molding step than the a portion as shown in FIG. A resin-encapsulated semiconductor device as described above is obtained. In addition, as described above, the tip portion b is also subjected to the forming step of bending at 90 degrees,
For surface mounting, for example, to prepare for insertion into an electronic device.
【0019】このような成形工程の角度については、図
9に記載した。即ち偶数番目のアウタ−リ−ド11a部
分の成形工程が角度θ1 30度程度、奇数番目のアウタ
−リ−ド11c部分の成形工程が角度θ2 約60度、両
方のb部分の成形工程がほぼθ3 直角である。The angle of such a forming process is shown in FIG. That is, the forming process of the even-numbered outer lead 11a portion is an angle θ 1 of about 30 °, the forming process of the odd-numbered outer lead 11c portion is an angle θ 2 of about 60 °, and the forming process of both b portions. Is approximately θ 3 right angle.
【0020】偶数番目と奇数番目のアウタ−リ−ド11
のピッチは例えば1.27mmであり、a、c部分の成
形工程とb部分の成形工程を終えたアウタ−リ−ド11
間の距離は、例えば5.08±0.3mmであり、b部
分の成形工程を行ったアウタ−リ−ド11直線部dの寸
法は例えば4.35±0.2mm、アウタ−リ−ド11
径0.75±0.05mmである。Even-numbered and odd-numbered outer leads 11
Has a pitch of, for example, 1.27 mm, and the outer lead 11 which has completed the molding process for the parts a and c and the molding process for the part b
The distance between them is, for example, 5.08 ± 0.3 mm, and the dimension of the outer lead 11 straight part d after the molding process of the b portion is, for example, 4.35 ± 0.2 mm, the outer lead. 11
The diameter is 0.75 ± 0.05 mm.
【0021】またa部分とb部分ならびにc部分とb部
分間の距離dは、電子機器などの設計により差を生じる
ので、距離dが比較的小さい場合には、各部分に形成す
る応力の影響を避けるために連結細条12とb部分間の
距離を、距離dが比較的大きい場合より大きくすること
が好ましい。Further, the distance d between the a portion and the b portion and the distance between the c portion and the b portion may differ depending on the design of the electronic device and the like. Therefore, when the distance d is relatively small, the influence of the stress formed in each portion. To avoid this, it is preferable to make the distance between the connecting strip 12 and the portion b larger than when the distance d is relatively large.
【0022】[0022]
【発明の効果】このように本発明に係わる樹脂封止型半
導体装置の製造方法では、アウタ−リ−ドの最終の成形
工程後に先端部分から切断するので、アウタ−リ−ドを
所定の角度に曲げる際にはその先端が連結細条と接続さ
れている。従って成形工程後のアウタ−リ−ドの方向性
が向上するので、表面実装時に所定の位置に嵌めること
ができる。As described above, in the method of manufacturing the resin-sealed semiconductor device according to the present invention, the outer lead is cut from the tip portion after the final molding step, so that the outer lead is cut at a predetermined angle. When it is bent, its tip is connected to the connecting strip. Therefore, the directionality of the outer lead after the molding process is improved, so that the outer lead can be fitted in a predetermined position during surface mounting.
【図1】従来の樹脂封止型半導体装置のアウタ−リ−ド
の成形工程後の上面図である。FIG. 1 is a top view of a conventional resin-sealed semiconductor device after an outer lead molding step.
【図2】図1に示す樹脂封止型半導体装置のアウタ−リ
−ドの側面図である。FIG. 2 is a side view of an outer lead of the resin-sealed semiconductor device shown in FIG.
【図3】本発明に係わる樹脂封止型半導体装置のウタ−
リ−ドの成形工程の一部を終えた状態を明らかにする上
面図である。FIG. 3 is a view of a resin-encapsulated semiconductor device according to the present invention.
It is a top view which shows the state which completed a part of molding process of a lead.
【図4】図3の工程後の樹脂封止型半導体装置を示す側
面図である。FIG. 4 is a side view showing the resin-sealed semiconductor device after the step of FIG.
【図5】図3に示す成形工程後に行う偶数番目のアウタ
−リ−ドを連結細条から切断後の状態を明らかにする樹
脂封止型半導体装置の上面図である。FIG. 5 is a top view of the resin-sealed semiconductor device, which shows a state after cutting the even-numbered outer leads from the connecting strips after the molding step shown in FIG. 3;
【図6】奇数番目のアウタ−リ−ドの成形工程後の樹脂
封止型半導体装置の上面図である。FIG. 6 is a top view of the resin-sealed semiconductor device after the odd-numbered outer lead molding step.
【図7】図6の工程後の樹脂封止型半導体装置を示す側
面図である。7 is a side view showing the resin-sealed semiconductor device after the step of FIG.
【図8】全成形工程後連結細条を除去した樹脂封止型半
導体装置の上面図である。FIG. 8 is a top view of the resin-sealed semiconductor device from which the connecting strips have been removed after the entire molding process.
【図9】樹脂封止型半導体装置のアウタ−リ−ド成形工
程における寸法を明らかにする断面図である。FIG. 9 is a cross-sectional view showing the dimensions of the resin-sealed semiconductor device in the outer lead molding step.
【図10】全工程を終えた樹脂封止型半導体装置の上面
図である。FIG. 10 is a top view of the resin-encapsulated semiconductor device after all the steps are completed.
1、10:樹脂封止層、 2、11:アウタ−リ−ド、 3、12:連結細条、 a〜c:成形工程を行うアウタ−リ−ド部分、 d:成形工程を行うac間の距離。 1, 10: resin sealing layer, 2, 11: outer lead, 3, 12: connecting strips, a to c: outer lead portion for performing molding step, d: between ac for performing molding step The distance.
Claims (1)
する工程と,この金属製の支持体に設置する複数のイン
ナ−リ−ドに対して交差する方向に設ける金属製の連結
細条によってお互いを接続する工程と,このインナ−リ
−ドと前記半導体素子を電気的に接続する工程と,前記
半導体素子を封止樹脂層で覆って複数のアウタ−リ−ド
を外部に導出する工程と,前記連結細条と封止樹脂層間
に位置するアウタ−リ−ド部分を曲げる成形工程と,こ
の工程後に前記連結細条を除去する工程とを具備するこ
とを特徴とする樹脂封止型半導体装置の製造方法1. A step of mounting a semiconductor element on a metal support, and a metal connecting strip provided in a direction intersecting with a plurality of inner leads installed on the metal support. A step of connecting each other, a step of electrically connecting the inner lead and the semiconductor element, and a step of covering the semiconductor element with a sealing resin layer to lead out a plurality of outer leads to the outside. And a molding step of bending an outer lead portion located between the connecting strip and the sealing resin layer, and a step of removing the connecting strip after this step. Method for manufacturing semiconductor device
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15822193A JPH0714961A (en) | 1993-06-29 | 1993-06-29 | Manufacture of resin-sealed semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15822193A JPH0714961A (en) | 1993-06-29 | 1993-06-29 | Manufacture of resin-sealed semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0714961A true JPH0714961A (en) | 1995-01-17 |
Family
ID=15666935
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15822193A Pending JPH0714961A (en) | 1993-06-29 | 1993-06-29 | Manufacture of resin-sealed semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0714961A (en) |
-
1993
- 1993-06-29 JP JP15822193A patent/JPH0714961A/en active Pending
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