JPH0713192A - Thin-film transistor driving liquid crystal display element - Google Patents

Thin-film transistor driving liquid crystal display element

Info

Publication number
JPH0713192A
JPH0713192A JP14325593A JP14325593A JPH0713192A JP H0713192 A JPH0713192 A JP H0713192A JP 14325593 A JP14325593 A JP 14325593A JP 14325593 A JP14325593 A JP 14325593A JP H0713192 A JPH0713192 A JP H0713192A
Authority
JP
Japan
Prior art keywords
liquid crystal
film
com
crystal display
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14325593A
Other languages
Japanese (ja)
Inventor
Kiyoshi Wakai
清 若井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14325593A priority Critical patent/JPH0713192A/en
Publication of JPH0713192A publication Critical patent/JPH0713192A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obviate the generation of linear defects in an abnormal longitudinal direction even in severe environment affected by strong vibrations and impact by forming a mechanically secure insulating film on the inside surface of the common transparent electrode of a substrate so as to evade points to be formed as pixels for display. CONSTITUTION:Patterns of black matrix films BM which prevent the exposure of thin-film transistors TFTs to external light and the consequent conducting thereof and help to improve the contrast by suppressing the reflection of the external light, color filters FILs, etc., are formed on the inside surface (liquid crystal side) of an upper transparent glass substrate SUB2. The surfaces thereof are coated with a protective film PSV2 and further, the common transparent electrode ITO2 (COM) covers thereon over the entire surface. Further, the mechanically secure insulating film PSV3, for example, a silicon nitride film, is formed on the inside surface of the common electrode ITO2 (COM) by evading the points to be formed as the pixels for display. As a result, the front ends of conductive foreign matter are blocked by the PSV3 and cannot come into contact with the common transparent electrode ITO2(COM) any more.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、薄膜トランジスタ(以
後TFTと呼ぶ)のドレイン電極が形成され、TFTが
形成されているガラス基板の他部分よりも電極形成によ
る段差分だけ対向(共通透明電極が形成された)基板側
へ比較的高く突出している部分が、強い振動や衝撃を受
けて対向基板側へ接近するような環境においても、表示
画像に異常な縦線が現れる事故が生じないようにしたT
FT駆動液晶表示素子に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention has a drain electrode of a thin film transistor (hereinafter referred to as a TFT) formed thereon and is opposed to another portion of a glass substrate on which a TFT is formed by a step difference due to electrode formation (a common transparent electrode is To prevent accidents where abnormal vertical lines appear in the displayed image even in an environment where the part that is formed (relatively high) to the substrate side approaches the opposite substrate side under strong vibration or shock. Did T
The present invention relates to an FT drive liquid crystal display element.

【0002】[0002]

【従来の技術】表示画像を構成するマトリクス状に配列
された多数の画素それぞれに対応してスイッチング素子
(と必要に応じて容量素子)を設けたアクティブマトリ
クス駆動方式液晶表示素子は、各画素電極が分離独立し
て駆動されるのでクロストーク現象が防止され、対向画
素電極間の容量効果で1フレーム期間中信号電圧を殆ど
一定に保持できるのに助けられて、所謂単純マトリクス
方式液晶表示素子で時分割駆動を行う場合に問題となる
走査電極数の制約を受けず、原理的にデューティ比10
0%のスタティック駆動に近い液晶表示を実現できる。
従って、コントラストやレスポンスなどの表示性能が格
段に優れ、クロストーク現象もなく、大型画面のカラー
表示用などの場合には独壇場の観があり、近年、携帯用
OA機器などに好んで採用されている。上記スイッチン
グ素子として実際にはTFTが広く用いられている。
2. Description of the Related Art A liquid crystal display element of an active matrix drive system in which a switching element (and a capacitor element as required) is provided corresponding to each of a large number of pixels arranged in a matrix to form a display image Are driven independently of each other, the crosstalk phenomenon is prevented, and the capacitance effect between the opposing pixel electrodes helps to keep the signal voltage almost constant during one frame period. In principle, the duty ratio is 10 without being restricted by the number of scan electrodes, which is a problem when performing time division driving.
A liquid crystal display close to 0% static drive can be realized.
Therefore, display performance such as contrast and response is remarkably excellent, there is no crosstalk phenomenon, and there is a single point of view for color display on a large screen, and in recent years, it has been favorably adopted for portable OA devices and the like. There is. In practice, TFTs are widely used as the switching element.

【0003】[0003]

【発明が解決しようとする課題】しかし、通常の半導体
素子のチップに比較して極端に大きな面積の液晶表示素
子基板上に、マトリクス状にTFTを配列させたTFT
駆動液晶表示素子の製作には、周知のように、非常に多
くの困難があり、歩留向上のために多くの努力が重ねら
れている。なお、薄膜トランジスタを使用したアクティ
ブマトリクス方式液晶表示素子については、例えば特開
昭63−309921号公報や、「冗長構成を採用した
12.5型アクティブ・マトリクス方式カラー液晶ディ
スプレイ」日経エレクトロニクス 1986年12月1
5日号 193〜210頁 にも記載されている。
However, a TFT in which TFTs are arranged in a matrix on a liquid crystal display element substrate having an extremely large area as compared with a normal semiconductor element chip.
As is well known, there are many difficulties in manufacturing a driving liquid crystal display device, and many efforts are made to improve the yield. An active matrix type liquid crystal display element using a thin film transistor is disclosed in, for example, Japanese Patent Application Laid-Open No. 63-309921 or “12.5 type active matrix type color liquid crystal display employing a redundant structure” Nikkei Electronics, December 1986. 1
It is also described in the 5th issue, pages 193-210.

【0004】種々の改善努力の結果、近年、かなり大型
で精細度も高いカラー液晶表示素子が市販されるように
なったが、通常の検査状況では発見されず、強い振動や
衝撃が加わる過酷な環境下でのみ、時として、本来は表
示される筈のない異常な縦線が現れる線状欠陥が生じる
ことが最近発見された。
As a result of various improvement efforts, a color liquid crystal display device having a considerably large size and a high definition has been commercially available in recent years, but it is not found in a normal inspection condition, and a severe vibration or shock is applied. It has been recently discovered that only in the environment, sometimes a linear defect occurs, in which an abnormal vertical line, which should not be displayed originally, appears.

【0005】本発明はこのような事故が生じないように
したTFT駆動液晶表示素子を提供することを課題とす
る。
It is an object of the present invention to provide a TFT drive liquid crystal display device which prevents such an accident.

【0006】[0006]

【課題を解決するための手段】上記課題を解決するため
に本発明においては、薄膜トランジスタ駆動液晶表示素
子の、薄膜トランジスタがなく基板内面に各画素に共通
な透明導電膜電極が全面的に形成されている基板の、前
記共通透明電極の内面上に、表示用画素となる個所を避
けて、機械的に堅固な絶縁膜を形成させることにした。
In order to solve the above problems, according to the present invention, a thin film transistor driving liquid crystal display element is provided without a thin film transistor, and a transparent conductive film electrode common to each pixel is entirely formed on an inner surface of a substrate. It was decided to form a mechanically firm insulating film on the inner surface of the common transparent electrode of the existing substrate, avoiding the portion which becomes the display pixel.

【0007】[0007]

【作用】本発明者が、強い振動や衝撃が加わる過酷な環
境下で、本来は表示される筈のない異常な縦線が短時間
だけ現れることが確認された不良品を詳しく調査したと
ころ、TFTのドレイン電極が形成され、TFTが形成
されているガラス基板の他部分よりもドレイン電極形成
による段差分だけ対向基板側へ比較的高く突出している
部分に、硬い導電性の異物が付着していて、上記ドレイ
ン電極を対向(共通透明電極が形成された)基板側の共
通透明導電膜電極に短絡させ、縦方向に同一信号電極線
(データ線)に接続されている近傍画素では、液晶に表
示用電圧を印加できない状態に陥っていることが判っ
た。
The present inventor has conducted a detailed investigation on a defective product in which it has been confirmed that an abnormal vertical line, which should not be originally displayed, appears for a short time under a severe environment where strong vibration or shock is applied. A hard conductive foreign substance adheres to a portion where the drain electrode of the TFT is formed and which projects relatively higher than the other portion of the glass substrate on which the TFT is formed toward the counter substrate by a step due to the formation of the drain electrode. Then, the drain electrode is short-circuited to the common transparent conductive film electrode on the opposite substrate side (where the common transparent electrode is formed), and in the neighboring pixels vertically connected to the same signal electrode line (data line), the It was found that the display voltage could not be applied.

【0008】上記のような、かなり大きな導電性異物
が、作業室内に存在している(異物は結局、ゴミ、塵埃
と同類で作業室内クリーン度不足)こと自体は決して看
過できないことではあるが、一方で、TFTを形成させ
ている液晶基板の面積が、通常の半導体素子のチップ面
積に比較して極端に大きいことを考慮すれば、多少工数
が増加しても事故防止できる手段は、たとえ対症療法的
対策であっても実行して歩留を向上させる方が得策であ
る。
The fact that a considerably large amount of conductive foreign matter as described above exists in the work chamber (after all, foreign matter is similar to dust and dust and lacks cleanliness in the work chamber) cannot be overlooked. On the other hand, considering that the area of the liquid crystal substrate on which the TFT is formed is extremely large compared to the chip area of a normal semiconductor element, even if the number of man-hours increases, a means to prevent accidents is a symptom. Even if it is a therapeutic measure, it is better to execute it to improve the yield.

【0009】本発明では上記手段を採ったので、TFT
のドレイン電極が、振動や衝撃を受けたときに透明ガラ
ス基板ごと対向基板側へ接近して、付着した導電性異物
を介して、対向基板の共通透明導電膜電極に接触しよう
としても、本発明により新たに設けた機械的に堅固な絶
縁膜たとえば窒化シリコン(Si34)膜に遮られて、
短絡事故が生じない。
Since the above-mentioned means is adopted in the present invention, the TFT
Even if the drain electrode of the present invention approaches the counter substrate side together with the transparent glass substrate when it is subjected to vibration or impact and tries to contact the common transparent conductive film electrode of the counter substrate through the attached conductive foreign matter, the present invention Is blocked by a newly provided mechanically firm insulating film such as a silicon nitride (Si 3 N 4 ) film,
No short circuit accident will occur.

【0010】図3は本発明を説明するための簡略な断面
図である。図3(a)は従来の素子の場合に、下部透明
ガラス基板SUB1を加工中、一つの画素のTFTのド
レイン電極SD2に導電性異物MDが付着し、それに気
付かずにTFTの上に保護膜PSV1を形成させたが、
異物MDが大きいため、保護膜PSV1で覆い切れず
に、異物MDの先端部は此の保護膜PSV1から更に突
出して、其の先端は上部透明ガラス基板SUB2の液晶
LCに直接接している配向膜ORI2に、まさに触れよ
うとしている状態を示している。しかし、この状態で
は、配向膜ORI2は絶縁性のある膜であるから、特に
異常な表示は現れない。液晶セルの内部には、上下透明
ガラス基板間の間隙を所定長に保持させるために、直径
が前記所定長に略等しい図示してないプラスチックビー
ズが散布封入されているが、プラスチックビーズが圧力
を受けて多少変形したり、またビーズの中には前記所定
長より僅かに直径の小さいものも存在するので、此の液
晶表示素子が若し強い振動や衝撃をうけると、導電性異
物MDの先端が比較的柔らかい(近年は主としてプラス
チック)配向膜ORI2を突き破って、上部透明ガラス
基板SUB2の内面全面に形成されている共通透明画素
電極ITO2(COM)に接触して下部透明ガラス基板SU
B1上の透明画素電極ITO1との間を短絡する形とな
り、このTFTが配設されている画素と同一のデータ線
(映像信号を伝える縦(列)方向の信号線)に接続され
た複数個の画素でも上下透明画素電極間が短絡されて、
それらの画素の液晶にも表示電圧を印加できなくなる。
従って、異物によって上下透明画素電極間が短絡されて
いる短い期間の間、透過型素子の場合には縦方向に光を
通過させ続ける、また、反射型素子の場合には、上記期
間中、縦方向に光を遮断し続ける、複数画素の縦列が生
じ、いわゆる線異常という不良事故が発生する。
FIG. 3 is a simplified sectional view for explaining the present invention. In the case of the conventional device, FIG. 3A shows that the conductive foreign material MD adheres to the drain electrode SD2 of the TFT of one pixel during the processing of the lower transparent glass substrate SUB1 and the protective film is formed on the TFT without noticing it. Formed PSV1,
Since the foreign matter MD is large, it is not completely covered with the protective film PSV1, and the tip of the foreign matter MD further projects from the protective film PSV1 and the tip thereof is in direct contact with the liquid crystal LC of the upper transparent glass substrate SUB2. ORI2 shows the state just about to be touched. However, in this state, since the orientation film ORI2 is an insulating film, no abnormal display appears. In order to keep the gap between the upper and lower transparent glass substrates to a predetermined length, plastic beads (not shown) having a diameter substantially equal to the predetermined length are dispersed and sealed inside the liquid crystal cell. When the liquid crystal display element is subjected to strong vibration or impact, the tip of the conductive foreign matter MD may be received. Penetrates the relatively soft (mainly plastic in recent years) alignment film ORI2 and contacts the common transparent pixel electrode ITO2 (COM) formed on the entire inner surface of the upper transparent glass substrate SUB2 to contact the lower transparent glass substrate SU.
A plurality of short-circuits are formed between the transparent pixel electrode ITO1 on B1 and the same data line (vertical (column) direction signal line transmitting a video signal) as the pixel in which this TFT is arranged. Even in the pixel of, the upper and lower transparent pixel electrodes are short-circuited,
The display voltage cannot be applied to the liquid crystal of those pixels.
Therefore, in the case of a transmissive element, light continues to pass in the vertical direction for a short period when the upper and lower transparent pixel electrodes are short-circuited by foreign matter, and in the case of a reflective element, during the above period, A column of a plurality of pixels that keeps blocking light in a certain direction is generated, and a so-called line abnormality occurs.

【0011】なお、図3は説明用であって、細部の記載
は大幅に簡略化した図である。
It should be noted that FIG. 3 is for illustration purposes only, and the detailed description is greatly simplified.

【0012】[0012]

【実施例】図1は本発明一実施例の要部の断面図であ
る。下部透明ガラス基板SUB1上(液晶側)には、T
FTの、ゲート電極GT、ゲート絶縁膜GI、ドレイン
電極SD2、ソース電極SD1や、ソース電極SD1に
接続された透明画素電極ITO1、上記TFTの各部材
を覆う酸化シリコンや窒化シリコンよりなる保護膜PS
V1、液晶LCの長い分子の配列方向を所望方向に向か
せるためにポリイミドなどの高分子膜をラビングして形
成した配向膜ORI1などが形成されている。なお、ド
レイン電極SD2とソース電極SD1との間に、ゲート
電極GTの上に、ゲート絶縁膜GIを介して、チャネル
形成領域として用いられるi型半導体層ASが形成され
ている。上部透明ガラス基板SUB2の内面(液晶側)
には、TFTが外光にさらされて導電状態になるのを防
止し、かつ外光の反射を抑制してコントラスト向上にも
役立つブラックマトリクス膜BM、カラーフィルタFI
L、などのパターンが形成されており、その上を保護膜
PSV2が覆い、更にその上を共通透明電極ITO2(C
OM)が全面的に覆っている。従来は、その上(液晶側)
は何処も全て、直接、配向膜ORI2に覆われていた
が、本発明では、共通透明電極ITO2(COM)の内面上
に、表示用画素となる個所を避けて、本発明に係る機械
的に堅固な絶縁膜PSV3、たとえば窒化シリコン膜が
形成させてある。図2は絶縁膜PSV3の形成個所を平
面的に示す図で、斜線を引いた部分に、画素となる個所
を避けて絶縁膜PSV3が形成されている。図示のよう
にドレイン電極SD2は下部透明ガラス基板SUB1の
面からかなり大きな段差をなして上部透明ガラス基板S
UB2の方へ盛り上がっている。従って、このドレイン
電極SD2に、図3に示したような、かなり大きい導電
性異物MDが付着すると、従来は、比較的穏やかな環境
下で行う通常の検査状態では問題がなくても、強い振動
や衝撃を受ける環境下では、上記導電性異物MDの先端
が、比較的柔らかい配向膜ORI2を突き破って、共通
透明電極ITO2に接触して、同じデータ線に接続され
た複数画素の上下透明電極間を短絡状態すなわち電圧印
加不能状態とし、短時間ではあるが異常な縦線が現れる
という事故を起こしていた。しかし、本発明に係る堅固
な絶縁膜PSV3が形成されていると、上記のような環
境下でも、導電性異物MDの先端は上記絶縁膜PSV3
に阻止されて共通透明電極ITO2(COM)に接触でき
ず、したがって、従来のように異常な縦線が現れる事故
は起こらなくなる。
FIG. 1 is a sectional view of the essential part of an embodiment of the present invention. On the lower transparent glass substrate SUB1 (liquid crystal side), T
The gate electrode GT, the gate insulating film GI, the drain electrode SD2, the source electrode SD1 of the FT, the transparent pixel electrode ITO1 connected to the source electrode SD1, and the protective film PS made of silicon oxide or silicon nitride that covers each member of the TFT.
V1, an alignment film ORI1 and the like formed by rubbing a polymer film of polyimide or the like to orient the long molecules of the liquid crystal LC in a desired direction. The i-type semiconductor layer AS used as a channel formation region is formed on the gate electrode GT between the drain electrode SD2 and the source electrode SD1 via the gate insulating film GI. Inner surface of upper transparent glass substrate SUB2 (liquid crystal side)
In addition, the black matrix film BM and the color filter FI which prevent the TFT from being brought into a conductive state by being exposed to external light and also suppress the reflection of external light to improve the contrast.
A pattern such as L is formed, a protective film PSV2 covers it, and a common transparent electrode ITO2 (C
OM) completely covers it. Conventionally, above that (on the liquid crystal side)
All of them were directly covered with the alignment film ORI2. However, in the present invention, by avoiding a portion to be a display pixel on the inner surface of the common transparent electrode ITO2 (COM), the mechanical A solid insulating film PSV3, for example, a silicon nitride film is formed. FIG. 2 is a plan view showing a portion where the insulating film PSV3 is formed, and the insulating film PSV3 is formed in a shaded portion while avoiding a portion which becomes a pixel. As shown in the figure, the drain electrode SD2 has a considerably large step from the surface of the lower transparent glass substrate SUB1 and the upper transparent glass substrate S.
It is getting excited towards UB2. Therefore, if a considerably large conductive foreign matter MD as shown in FIG. 3 adheres to the drain electrode SD2, a strong vibration is conventionally generated even if there is no problem in a normal inspection state performed in a relatively mild environment. In an environment subject to impact or shock, the tip of the conductive foreign matter MD penetrates through the relatively soft alignment film ORI2 and contacts the common transparent electrode ITO2, and between the upper and lower transparent electrodes of a plurality of pixels connected to the same data line. Was short-circuited, that is, the voltage could not be applied, and an abnormal vertical line appeared for a short time. However, when the solid insulating film PSV3 according to the present invention is formed, the tip of the conductive foreign matter MD is still above the insulating film PSV3 even under the above environment.
Therefore, the common transparent electrode ITO2 (COM) cannot be contacted and the abnormal vertical line appears unlike the conventional case.

【0013】なお、本発明では上部透明ガラス電極SU
B2内面上に、共通透明電極ITO2(COM)は全面にそ
のまま残し、更に其の内面上に、表示用画素となる個所
を避けて、導電性異物MDが付着しても短絡事故を起こ
さないように、絶縁膜PSV3を形成させた。こうする
代りに、共通透明電極ITO2(COM)の導電性異物MD
によって接触短絡事故を生ずる恐れのある個所を繰り抜
くことも考えられるが、これは共通透明電極ITO2(C
OM)のシート抵抗値を高くし、画質劣化を招く恐れがあ
るので好ましくない。
In the present invention, the upper transparent glass electrode SU
On the inner surface of B2, the common transparent electrode ITO2 (COM) is left on the entire surface as it is, and on the inner surface of the same, avoiding a portion to be a display pixel, and avoiding a short circuit accident even if a conductive foreign matter MD adheres. Then, the insulating film PSV3 was formed. Instead of this, the conductive foreign matter MD of the common transparent electrode ITO2 (COM)
It is also possible to cut out a part that may cause a contact short circuit accident, but this is common transparent electrode ITO2 (C
(OM) sheet resistance value is increased, which may lead to deterioration of image quality, which is not preferable.

【0014】[0014]

【発明の効果】以上説明したように本発明によれば、下
部透明ガラス基板面から高く盛り上がったTFTのドレ
イン電極に、大きな導電性異物が付着してしまった場合
でも、従来の素子とは異なり、強い振動や衝撃のある過
酷な環境下でも、異常な縦線が表示される恐れはなくな
り、耐振性、耐衝撃性良好な薄膜トランジスタ駆動液晶
表示素子が得られる。
As described above, according to the present invention, even when a large conductive foreign substance adheres to the drain electrode of the TFT that is raised above the lower transparent glass substrate surface, unlike the conventional device. Even under a severe environment with strong vibration or shock, there is no fear of displaying abnormal vertical lines, and a thin film transistor drive liquid crystal display device with good vibration resistance and shock resistance can be obtained.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明一実施例の要部の断面図である。FIG. 1 is a sectional view of an essential part of an embodiment of the present invention.

【図2】上部透明ガラス基板内側の共通透明電極の内面
上に形成すべき本発明に係る堅固な絶縁膜の形成個所を
示す平面図である。
FIG. 2 is a plan view showing a formation location of a solid insulating film according to the present invention to be formed on an inner surface of a common transparent electrode inside an upper transparent glass substrate.

【図3】本発明を説明するための簡略な断面図で、図3
(a)は従来の素子のTFTのドレイン電極に大きな導
電性異物が付着して、振動や衝撃を受ければ、容易に異
常な縦線が現れそうになっている状態を示す図、図3
(b)は上記のような導電性異物が付着しても、本発明
に係る堅固な絶縁膜の効果により、異常な縦線が現れる
恐れが無くなった状態を示す図である。
FIG. 3 is a schematic cross-sectional view for explaining the present invention.
FIG. 3A is a diagram showing a state in which a large conductive foreign substance is attached to the drain electrode of the TFT of the conventional element, and an abnormal vertical line is likely to appear when subjected to vibration or shock.
FIG. 3B is a diagram showing a state in which even if the conductive foreign matter is attached, the effect of the solid insulating film according to the present invention eliminates the possibility that an abnormal vertical line will appear.

【符号の説明】[Explanation of symbols]

SUB1…下部透明ガラス基板、 GT…ゲート電極、
GI…ゲート絶縁膜、SD1…ソース電極、 SD2
…ドレイン電極、 AS…i型半導体層、 ITO1…
透明画素電極、 PSV1…TFTを覆う保護膜、 O
RI1…下部基板側の配向膜、 MD…導電性異物、
SUB2…上部透明ガラス基板、 BM…ブラックマト
リクス膜、 FIL…カラーフィルタ、 PSV2…上
部基板内面のカラーフィルタやブラックマトリクスを覆
う保護膜、 ITO2…共通透明電極、 ORI2…上
部基板側配向膜、 PSV3…本発明に係る堅固な絶縁
膜、 LC…液晶。
SUB1 ... Lower transparent glass substrate, GT ... Gate electrode,
GI ... Gate insulating film, SD1 ... Source electrode, SD2
... Drain electrode, AS ... i-type semiconductor layer, ITO1 ...
Transparent pixel electrode, PSV1 ... Protective film covering TFT, O
RI1 ... Alignment film on the lower substrate side, MD ... Conductive foreign matter,
SUB2 ... Upper transparent glass substrate, BM ... Black matrix film, FIL ... Color filter, PSV2 ... Protective film covering color filter and black matrix on inner surface of upper substrate, ITO2 ... Common transparent electrode, ORI2 ... Alignment film on upper substrate side, PSV3 ... A solid insulating film according to the present invention, LC ... Liquid crystal.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】薄膜トランジスタ駆動液晶表示素子の、薄
膜トランジスタがなく基板内面に各画素に共通な透明導
電膜電極が全面的に形成されている基板の、前記共通透
明電極の内面上に、表示用画素となる個所を避けて、機
械的に堅固な絶縁膜を形成させたことを特徴とする薄膜
トランジスタ駆動液晶表示素子。
1. A thin film transistor driving liquid crystal display element, wherein a thin film transistor is not provided and a transparent conductive film electrode common to each pixel is entirely formed on the inner surface of the substrate, and a display pixel is formed on the inner surface of the common transparent electrode. A thin film transistor drive liquid crystal display element, characterized in that a mechanically strong insulating film is formed so as to avoid the area where
JP14325593A 1993-06-15 1993-06-15 Thin-film transistor driving liquid crystal display element Pending JPH0713192A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14325593A JPH0713192A (en) 1993-06-15 1993-06-15 Thin-film transistor driving liquid crystal display element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14325593A JPH0713192A (en) 1993-06-15 1993-06-15 Thin-film transistor driving liquid crystal display element

Publications (1)

Publication Number Publication Date
JPH0713192A true JPH0713192A (en) 1995-01-17

Family

ID=15334497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14325593A Pending JPH0713192A (en) 1993-06-15 1993-06-15 Thin-film transistor driving liquid crystal display element

Country Status (1)

Country Link
JP (1) JPH0713192A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100433115C (en) * 2002-02-07 2008-11-12 Nec液晶技术株式会社 Liquid crystal display equipment capable of effectively preventing irregularity of color

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100433115C (en) * 2002-02-07 2008-11-12 Nec液晶技术株式会社 Liquid crystal display equipment capable of effectively preventing irregularity of color

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