JPH07131153A - Connecting method for substrate and conductive joining agent - Google Patents

Connecting method for substrate and conductive joining agent

Info

Publication number
JPH07131153A
JPH07131153A JP5294374A JP29437493A JPH07131153A JP H07131153 A JPH07131153 A JP H07131153A JP 5294374 A JP5294374 A JP 5294374A JP 29437493 A JP29437493 A JP 29437493A JP H07131153 A JPH07131153 A JP H07131153A
Authority
JP
Japan
Prior art keywords
conductive
particles
substrate
bonding agent
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5294374A
Other languages
Japanese (ja)
Inventor
Shozo Sugano
正三 菅野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Victor Company of Japan Ltd
Original Assignee
Victor Company of Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Victor Company of Japan Ltd filed Critical Victor Company of Japan Ltd
Priority to JP5294374A priority Critical patent/JPH07131153A/en
Publication of JPH07131153A publication Critical patent/JPH07131153A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives

Abstract

PURPOSE:To provide the connecting method of (an electrode of) a semiconductor substrate and (a connecting terminal of) a circuit substrate in a stable state. CONSTITUTION:The first soft conductive particles 7 in large particle diameter is blended with the second hard particles 6 in small particle diameter in an insulating bonding agent 5 to produce a conductive junction agent. This conductive junction agent is selectively provided on a connecting terminal 4 of a circuit substrate 3 by a method such as printing step, etc. Next, the whole surface of semiconductor substrate 1 whereon an electrode 2 is formed on the position corresponding to the connecting terminal 4 of the circuit substrate 3 is coated with an insulating bonding agent 5 to be opposed to the circuit substrate 3 for mutual pressurization. In such a state, the first conductive particles 7 on the circuit substrate 3 are deformed to make the area between electrodes conductive. Finally, the insulating bonding agent 5 is set so that both substrates 1, 3 may be fixedly connected in a specific thickness state by the second particles 6.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、ICチップやLEDチ
ップなどの半導体基板(の電極)と回路基板(の接続端
子)との接続に係り、基板の接続方法及び導電用接合剤
に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a connection between (an electrode of) a semiconductor substrate such as an IC chip or an LED chip and (a connection terminal of) a circuit substrate, and relates to a substrate connecting method and a conductive bonding agent. is there.

【0002】[0002]

【従来の技術】従来、半導体基板と回路基板の接続する
方法としては電極間に異方性導電接着剤を用いて接着す
る方法が、特開昭60−180132公報に示すように
検討されている。異方性導電接着剤とは、絶縁性接着剤
の中に導電性粒子を分散混合したものである。この異方
性導電接着剤を用いて半導体基板に接続する際、異方性
導電接着剤は回路基板端子上のみでなく接続端子間上に
も装着される。
2. Description of the Related Art Conventionally, as a method of connecting a semiconductor substrate and a circuit board, a method of adhering electrodes by using an anisotropic conductive adhesive has been studied as shown in JP-A-60-180132. . The anisotropic conductive adhesive is a mixture of conductive particles dispersed in an insulating adhesive. When connecting to a semiconductor substrate using this anisotropic conductive adhesive, the anisotropic conductive adhesive is mounted not only on the circuit board terminals but also between the connection terminals.

【0003】そして、回路基板の接続端子と半導体基板
の電極を異方性導電接着剤を介在して加熱・加圧する
と、回路基板の接続端子と半導体基板の電極との間に介
在された絶縁性接着剤及び導電性粒子は接続端子間に流
動し、回路基板の接続端子と半導体基板の電極とは導電
性粒子に直接接続する。すなわち、異方性導電接着剤と
は、接合状態において厚み方向には導電性を有するが、
面方向には絶縁性を持ち、導電性に方向性をもった接着
剤と言うことである。
Then, when the connection terminal of the circuit board and the electrode of the semiconductor substrate are heated and pressed with an anisotropic conductive adhesive interposed, the insulation interposed between the connection terminal of the circuit board and the electrode of the semiconductor substrate. The conductive adhesive and the conductive particles flow between the connection terminals, and the connection terminals of the circuit board and the electrodes of the semiconductor substrate are directly connected to the conductive particles. That is, the anisotropic conductive adhesive has conductivity in the thickness direction in the bonded state,
This is an adhesive that has an insulating property in the surface direction and a conductive property.

【0004】したがって、この異方性導電接着剤を用い
た接続構造では、異方性導電接着剤を使用する際に、位
置合わせをする必要がなく容易に接続でき、また接続端
子間にも絶縁性接着剤が介在されるため、接合後に封止
樹脂を充填しなくても、接合強度を確保することができ
る。
Therefore, in the connection structure using this anisotropic conductive adhesive, it is possible to easily connect without using alignment when using the anisotropic conductive adhesive, and also to insulate between the connection terminals. Since the conductive adhesive is interposed, the bonding strength can be secured without filling the sealing resin after the bonding.

【0005】また、特開平3−131089号公報に示
すように、ガラス基板上にある配線パターンの電極部以
外の光硬化性接着剤を選択的に硬化させ、未硬化の電極
上に導電性粒子を配置させ、ガラス基板とフレキシブル
基板の接続を行うようにしたものも知られている。
Further, as disclosed in Japanese Patent Laid-Open No. 3-131089, a photo-curable adhesive other than the electrode portion of the wiring pattern on the glass substrate is selectively cured to form conductive particles on the uncured electrode. It is also known that the glass substrate and the flexible substrate are connected by disposing them.

【0006】[0006]

【発明が解決しようとする課題】上述した異方性導電接
着剤を用いた半導体基板と回路基板との接続構造では、
異方性導電接着剤が厚さ方向に導電性を有し、面方向に
絶縁性を有することが絶対条件となる。厚さ方向に導電
性を有するには回路基板の接続端子と半導体基板の電極
との間に最低1個以上の導電性粒子が介在される必要が
ある。また、面方向に絶縁性を有するには、どの導電性
粒子も隣接する導電性粒子とは絶縁性接着剤により電気
的に導通しない間隔を保たねばならない。
In the connection structure between the semiconductor substrate and the circuit board using the above-mentioned anisotropic conductive adhesive,
It is an absolute requirement that the anisotropic conductive adhesive has conductivity in the thickness direction and has insulation in the plane direction. In order to have conductivity in the thickness direction, at least one conductive particle needs to be interposed between the connection terminal of the circuit board and the electrode of the semiconductor substrate. Further, in order to have an insulating property in the plane direction, it is necessary to maintain a distance at which no conductive particles are electrically connected to the adjacent conductive particles by an insulating adhesive.

【0007】しかし、異方性導電接着剤において、絶縁
性接着剤中に分散される導電性粒子の間隔は一様ではな
く、疎の部分、密の部分を有している。したがって、疎
の部分でも1つの接続端子に対して1つ以上の導電性粒
子を位置ずけさせること及び密の部分でも導電性粒子の
隣どうしは絶縁性を有することが条件となる。ところ
で、使用する電極ピッチが狭くかつ小さくなると、疎の
部分でも導電性粒子を電極に1個以上乗るようにするに
は、疎の部分の密度を上げるために絶縁性接着剤の中に
混入する導電性粒子の数を多くすることになる。すると
密の部分はさらに導電性粒子の密度が増え、短絡の可能
性が増大してしまう。
However, in the anisotropic conductive adhesive, the intervals of the conductive particles dispersed in the insulative adhesive are not uniform but have a sparse portion and a dense portion. Therefore, it is a condition that one or more conductive particles should be positioned with respect to one connection terminal even in a sparse part and that adjacent conductive particles also have an insulating property in a dense part. By the way, when the electrode pitch to be used is narrow and small, in order to allow one or more conductive particles to ride on the electrode even in the sparse part, it is mixed in the insulating adhesive in order to increase the density of the sparse part. The number of conductive particles will be increased. Then, the density of the conductive particles in the dense portion further increases, and the possibility of short circuit increases.

【0008】また、前記した導電性粒子を用いた(半導
体)基板の接続方法では、導電性粒子を電極へ付着させ
る際一定の数を付着させるのは困難である。そのため電
極に付着した導電性粒子の数は電極により異なるため一
定の圧力で加圧されたとしても、導電性粒子にかかる荷
重はまちまちでありつぶれ方もそれに応じてばらつきを
生じる。このばらつきがあるために、接続抵抗の安定化
が困難であるという問題がある。
Further, in the above-mentioned method of connecting (semiconductor) substrates using conductive particles, it is difficult to adhere a fixed number of conductive particles to the electrodes. Therefore, since the number of conductive particles attached to the electrode varies depending on the electrode, even if a constant pressure is applied, the load applied to the conductive particle varies and the crushing method also varies accordingly. Due to this variation, it is difficult to stabilize the connection resistance.

【0009】本発明は、以上のような問題点に着目し、
これを有効に解決すべく発明されたものであり、その第
1の特徴は、導電性粒子を必要な電極表面のみに作成
し、導電性粒子の数に関係することなく導電性粒子の変
形量を一定にし、常に安定した接続状態が得られるよう
にしたものである。
The present invention focuses on the above problems,
The present invention was devised to effectively solve this problem, and the first feature thereof is that the conductive particles are formed only on the required electrode surface, and the amount of deformation of the conductive particles is independent of the number of the conductive particles. Is kept constant so that a stable connection state can always be obtained.

【0010】さらに、その第2の特徴は、粒子を混入し
た導電性接合剤(接着剤)を必要な電極表面のみに作成
し、熱圧着時粒子の厚さ方向の変形によりばらつきを吸
収することで、常に安定した接続状態が得られるように
したものである。
Further, the second characteristic is that a conductive bonding agent (adhesive) mixed with particles is formed only on a necessary electrode surface, and variations are absorbed by deformation of particles in the thickness direction during thermocompression bonding. With this, a stable connection state can always be obtained.

【0011】[0011]

【課題を解決するための手段】本発明は上記課題を解決
するために、第1に、例えば図1に示すように、粒径が
大きく硬度の柔らかい第1の導電性粒子7と粒径が小さ
く硬度の硬い第2の粒子6を絶縁性接着剤5中に混合し
て導電用接合剤を形成し、この導電用接合剤を印刷など
の方法で回路基板3の接続端子4上に選択的に形成す
る。次に、この回路基板の接続端子に対応する位置に電
極2が形成された半導体基板1の表面全体に絶縁性接着
剤を塗布し回路基板と対向させて相互に加圧する。この
状態で、回路基板上の第1の導電性粒子7が変形して接
続する。第2の粒子6により、一定厚の状態で、絶縁性
接着剤が硬化して両基板が固定接続される。
In order to solve the above problems, according to the present invention, firstly, as shown in FIG. 1, for example, as shown in FIG. Small and hard second particles 6 are mixed in the insulating adhesive 5 to form a conductive bonding agent, and the conductive bonding agent is selectively printed on the connection terminals 4 of the circuit board 3 by a method such as printing. To form. Next, an insulating adhesive is applied to the entire surface of the semiconductor substrate 1 on which the electrodes 2 are formed at the positions corresponding to the connection terminals of the circuit board, and the insulating adhesive is opposed to the circuit board and pressed against each other. In this state, the first conductive particles 7 on the circuit board are deformed and connected. By the second particles 6, the insulating adhesive is cured and the both substrates are fixedly connected in a state of a constant thickness.

【0012】さらに、第2に、例えば図3に示すよう
に、粒子9を導電性接着剤7中に混合して半硬化させ導
電用接合剤を形成し、この導電用接合剤を印刷などの方
法で回路基板3の接続端子4上に選択的に形成する。次
に、この回路基板の接続端子に対応する位置に電極2が
形成された半導体基板1の表面全体に絶縁性接着剤5を
塗布し回路基板と対向させて相互に加圧すると回路基板
上の導電性接着剤7が変形して接続する。粒子9によ
り、一定厚の状態で、絶縁性接着剤が硬化して両基板が
固定接続される。
Further, secondly, as shown in FIG. 3, for example, the particles 9 are mixed in the conductive adhesive 7 and semi-cured to form a conductive bonding agent, and the conductive bonding agent is used for printing or the like. And selectively formed on the connection terminals 4 of the circuit board 3 by a method. Next, when the insulating adhesive 5 is applied to the entire surface of the semiconductor substrate 1 on which the electrodes 2 are formed at the positions corresponding to the connection terminals of the circuit board, the insulating adhesive 5 is made to face the circuit board, and pressure is applied to each other. The conductive adhesive 7 is deformed and connected. By the particles 9, the insulating adhesive is hardened and both substrates are fixedly connected in a state of a constant thickness.

【0013】[0013]

【作用】前記した第1の基板の接続方法によれば、回路
基板上の導電性粒子の分布の疎密による荷重のばらつき
を生じたとしても第1の導電性粒子7が変形し、かつ第
2の粒子8で支えることにより第1の導電性粒子7の変
形量は一定に保たれ、安定した接続状態を得ることがで
きる。
According to the above-described first substrate connecting method, the first conductive particles 7 are deformed and the second conductive particles 7 are deformed even if the load is varied due to the uneven distribution of the conductive particles on the circuit board. By supporting the first conductive particles 7 with the particles 8, the deformation amount of the first conductive particles 7 is kept constant, and a stable connection state can be obtained.

【0014】前記した第2の基板の接続方法によれば、
回路基板の接続端子や半導体基板の電極等の高さのばら
つきを生じたとしても粒子9が変形して厚さ方向のばら
つきを吸収しかつ、導電接着剤7が電極と端子の導通を
取るため安定した接続状態を得ることができる。
According to the above-mentioned second substrate connecting method,
Even if the heights of the connection terminals of the circuit board and the electrodes of the semiconductor substrate are varied, the particles 9 are deformed to absorb the variation in the thickness direction and the conductive adhesive 7 conducts the electrodes and the terminals. A stable connection state can be obtained.

【0015】[0015]

【実施例】以下に、本発明になる基板の接続方法及び導
電用接合剤の一実施例を添付図面に基づいて詳述する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a method for connecting substrates and a conductive bonding agent according to the present invention will be described below in detail with reference to the accompanying drawings.

【0016】(実施例1)図1は本発明に従って電極の
接続が行われた基板の構成を示す部分断面図である。同
図に示すように、接続端子4が形成された回路基板3
は、半導体基板1の電極2に対応した状態で、第1の導
電性粒子7と第2の粒子6とを介して電気的に接続さ
れ、絶縁性接着剤5によりこれらが固定されている。
(Embodiment 1) FIG. 1 is a partial sectional view showing the structure of a substrate to which electrodes are connected according to the present invention. As shown in the figure, the circuit board 3 on which the connection terminals 4 are formed
Are electrically connected through the first conductive particles 7 and the second particles 6 in a state corresponding to the electrodes 2 of the semiconductor substrate 1, and these are fixed by the insulating adhesive 5.

【0017】第1の導電性粒子7は粒径が大きく硬度の
柔らかく、例えば3〜30μmの外形を有するものであ
る。第2の粒子6は粒径が小さく硬度の硬く、例えば1
〜15μmの外形を有するものである。第1の導電性粒
子7と第2の粒子6とは、絶縁性接着剤5に混合された
ものである。なお、電極2や接続端子4の大きさは、6
0〜100μm程度である。
The first conductive particles 7 have a large particle size and soft hardness, and have an outer shape of, for example, 3 to 30 μm. The second particles 6 have a small particle size and a high hardness, for example, 1
It has an outer shape of ˜15 μm. The first conductive particles 7 and the second particles 6 are mixed with the insulating adhesive 5. The size of the electrode 2 and the connection terminal 4 is 6
It is about 0 to 100 μm.

【0018】また、上記第1の導電性粒子7の材料とし
ては、少なくとも外周面に導電性を有する粒子であれば
金属単体、金属の合金もしくは樹脂球に金属皮膜のいず
れでも特に限定されないが、好ましくは接続の安定させ
るため柔軟性を有する材料がよく、例えば、ニッケルボ
ールを利用できる。上記第2の粒子6は導電、非導体の
いずれでも特に限定されないが、硬度は1の導電性粒子
7の3〜10倍を有する材料が良く、例えば、シリカを
利用できる。
The material of the first conductive particles 7 is not particularly limited as long as it is a particle having conductivity at least on the outer peripheral surface, either a simple metal, an alloy of metal, or a resin coating on a resin ball. Preferably, a flexible material is used to stabilize the connection, and for example, nickel balls can be used. The second particles 6 are not particularly limited to conductive or non-conductive, but a material having a hardness of 3 to 10 times that of the conductive particles 7 having a hardness of 1 is preferable, and for example, silica can be used.

【0019】このように、粒子の硬度を変えることによ
り、位置合わせ後の加圧時に第1の導電性粒子7はつぶ
れ、第2の粒子6はつぶれずに厚さを保つことでガラス
やチップの厚さのバラツキを吸収して一定厚の接続が可
能となる。
As described above, by changing the hardness of the particles, the first conductive particles 7 are crushed and the second particles 6 are not crushed at the time of pressurizing after alignment, and the thickness is maintained so that glass or chips can be obtained. It is possible to absorb the variation in thickness and to connect with a constant thickness.

【0020】また、図2(A)〜(D)は本発明になる
基板の接続方法を順次示した断面図である。まず同図
(A)に示すように、第1の導電粒子7及び第2の粒子
6を絶縁性接着剤5に混ぜ導電接合剤を、回路基板3の
電極4へ印刷などの方法によって接着層(5)を形成す
る。接着剤としては熱硬化性、光硬化性等の接着剤を用
いることができる。なお、粒子と絶縁性接着剤との混入
比率は重量比で40〜70%が最適である。
Further, FIGS. 2A to 2D are sectional views sequentially showing a method of connecting substrates according to the present invention. First, as shown in FIG. 3A, the first conductive particles 7 and the second particles 6 are mixed with the insulating adhesive 5 and the conductive adhesive is applied to the electrodes 4 of the circuit board 3 by a method such as printing. (5) is formed. As the adhesive, a thermosetting adhesive, a photocurable adhesive, or the like can be used. The optimum mixing ratio of the particles and the insulating adhesive is 40 to 70% by weight.

【0021】次に、同図(B)に示すように、接着剤供
給漕11の接着剤層5の上に半導体基板1を押圧するこ
とにより、半導体基板表面に絶縁性接着剤5を付着させ
る。
Next, as shown in FIG. 1B, the semiconductor substrate 1 is pressed onto the adhesive layer 5 of the adhesive supply tank 11 to adhere the insulating adhesive 5 to the surface of the semiconductor substrate. .

【0022】さらに、同図(C)に示すように、絶縁性
接着剤5を塗布した半導体基板1を、半導体基板1の電
極2に対応する接続端子4が形成回路基板3上に位置合
わせする。
Further, as shown in FIG. 1C, the semiconductor substrate 1 coated with the insulating adhesive 5 is aligned with the connection terminals 4 corresponding to the electrodes 2 of the semiconductor substrate 1 on the formed circuit board 3. .

【0023】そして、同図(D)に示すように、位置合
わせした後加圧する。この加圧により、第1の導電性粒
子7はばらつきを吸収しつつ変形し、かつ第2の粒子6
で一定厚に保たれながら電気的に接続される。この状態
で絶縁性接着剤5を硬化することにより、両基板の接続
及び固定が完了する。
Then, as shown in FIG. 3D, pressure is applied after positioning. By this pressurization, the first conductive particles 7 are deformed while absorbing the variations, and the second particles 6 are
It is electrically connected while being kept at a constant thickness. By curing the insulating adhesive 5 in this state, connection and fixing of both substrates are completed.

【0024】以上説明したように本発明によれば、半導
体基板の電極を導電性粒子を介して対応する回路基板の
電極に加圧接続するため、基板の厚みや導電性粒子数の
多少に拘らず接続時には第1の導電性粒子7が変形して
接続し第2の粒子6が圧力を支えて一定の厚さに抑える
ため、安定した接続を得ることができる。さらに導電性
粒子が電極部のみに高密度に配置されるため、安定した
極小ピッチの電極接続が可能である。したがって、上記
実施例に基づいて、ガラス基板上で、LEDチップとL
ED駆動用ICとを接続してLEDアレイ装置を製作す
れば、接続する電極部に第1の導電性粒子7及び第2の
粒子6を介することにより、接続抵抗のバラツキからく
る輝度低下や輝度バラツキはなく、安定した接続状態が
得られることになる。
As described above, according to the present invention, since the electrode of the semiconductor substrate is pressure-connected to the electrode of the corresponding circuit board through the conductive particles, the thickness of the substrate and the number of the conductive particles are limited. Without connection, the first conductive particles 7 are deformed and connected, and the second particles 6 support the pressure and suppress the thickness to a certain thickness, so that a stable connection can be obtained. Further, since the conductive particles are arranged in high density only in the electrode portion, stable electrode connection with a very small pitch is possible. Therefore, based on the above embodiment, the LED chip and L
When the LED array device is manufactured by connecting with the ED driving IC, the first conductive particles 7 and the second particles 6 are interposed in the connecting electrode portion, so that the brightness and the brightness decrease due to the variation in the connection resistance. There is no variation, and a stable connection state can be obtained.

【0025】なお、上記実施例(基板の接続方法)にお
いては、半導体基板を他の回路基板と接続する場合につ
いて説明したが、半導体基板に限定する必要はなく他の
回路基板においても本発明は実施することができる。
In the above embodiment (method of connecting the boards), the case where the semiconductor substrate is connected to another circuit board has been described, but the invention is not limited to the semiconductor board and the present invention can be applied to other circuit boards. It can be carried out.

【0026】なお、上記実施例(導電用接合剤)におい
ては、同図(A)に示すように、第1の導電粒子7及び
第2の粒子6を絶縁性接着剤5に混ぜて導電接合剤とし
たが、混合のベース剤としては接着剤ではなく単なる接
合剤(樹脂など)でも良い。
In the above-mentioned embodiment (conducting adhesive), the first conductive particles 7 and the second particles 6 are mixed with the insulating adhesive 5 as shown in FIG. However, the base material for mixing may be a simple bonding agent (resin or the like) instead of an adhesive agent.

【0027】(実施例2)次に、他の実施例を説明す
る。図3は本発明に従って電極の接続が行われた半導体
基板の構成を示す部分断面図である。同図に示すよう
に、接続端子4の形成された回路基板3は、半導体基板
1の電極2に対応した状態で、例えば3〜30μmの外
形を有する粒子9と導電性接着剤10からなる導電用接
合剤を介して電気的に接続され、絶縁性接着剤8により
これらが固定されている。
(Embodiment 2) Next, another embodiment will be described. FIG. 3 is a partial sectional view showing the structure of a semiconductor substrate to which electrodes are connected according to the present invention. As shown in the figure, the circuit board 3 on which the connection terminals 4 are formed is, in a state corresponding to the electrodes 2 of the semiconductor substrate 1, a conductive material including particles 9 having an outer shape of 3 to 30 μm and a conductive adhesive 10. They are electrically connected to each other via a bonding agent for use and fixed by an insulating adhesive 8.

【0028】上記粒子9の材料としては、導電、非導体
のいずれでも特に限定されないが硬度は厚さ方向のばら
つきを吸収するため柔軟性を有する材料がよく、例えば
ニッケルメッキの樹脂ボールを利用している。そして、
接続端子4に導電用接合剤を塗布後導電性接着剤を半硬
化させる。そうすることにより位置合わせ後の加圧時に
絶縁性接着剤層を破り電極2への接続が可能となる。ま
た混入された粒子9が電極や接続端子等の厚さ等のばら
つきを吸収して安定した接続が可能となる。
The material of the particles 9 is not particularly limited to conductive or non-conductive material, but the hardness is preferably a flexible material because it absorbs variations in the thickness direction. For example, nickel-plated resin balls are used. ing. And
After applying the conductive adhesive to the connection terminals 4, the conductive adhesive is semi-cured. By doing so, it is possible to break the insulating adhesive layer at the time of pressurizing after alignment and connect to the electrode 2. In addition, the mixed particles 9 absorb variations in the thickness of the electrodes, the connection terminals, etc., and a stable connection is possible.

【0029】図4は本発明になる基板の接続方法を順次
示した断面図である。まず同図(A)に示すように、粒
子9を導電性接着剤10に混ぜた導電性接合剤を、回路
基板3の接続端子4へ印刷などの方法によって導電性接
着層(10)を形成し半硬化させる。
FIG. 4 is a sectional view sequentially showing a method of connecting substrates according to the present invention. First, as shown in FIG. 1A, a conductive adhesive layer 10 is formed by printing a conductive bonding agent in which particles 9 are mixed with a conductive adhesive 10 on the connection terminals 4 of the circuit board 3. Then half cure.

【0030】次に同図(B)に示すように、接着剤供給
漕11の絶縁性接着剤層8の上に半導体基板1を押圧す
ることにより、半導体基板表面に絶縁性接着剤8を付着
させる。接着剤としては熱硬化性、光硬化性等の接着剤
を用いることができる。
Next, as shown in FIG. 3B, the semiconductor substrate 1 is pressed onto the insulating adhesive layer 8 of the adhesive supply tank 11 to adhere the insulating adhesive 8 to the surface of the semiconductor substrate. Let As the adhesive, a thermosetting adhesive, a photocurable adhesive, or the like can be used.

【0031】次に同図(C)に示すように、絶縁性接着
剤8を塗布した半導体基板1を、半導体基板1の電極2
に対応する接続端子4が形成された回路基板3上に位置
合わせする。
Next, as shown in FIG. 1C, the semiconductor substrate 1 coated with the insulating adhesive 8 is replaced with the electrode 2 of the semiconductor substrate 1.
Are aligned on the circuit board 3 on which the connection terminals 4 corresponding to are formed.

【0032】その後、同図(D)に示すように、加圧す
る。この加圧により、半硬化した導電性接着剤が絶縁接
着剤層(8)を破って導通が取れ、粒子9は厚さ方向の
ばらつきを吸収しつつ変形し電気的に接続される。この
状態で導電性接着剤10及び絶縁性接着剤8を硬化する
ことにより、両基板の接続及び固定が完了する。
After that, pressure is applied as shown in FIG. By this pressurization, the semi-cured conductive adhesive breaks the insulating adhesive layer (8) to establish electrical connection, and the particles 9 are deformed while absorbing the variation in the thickness direction and electrically connected. In this state, the conductive adhesive 10 and the insulating adhesive 8 are cured to complete the connection and fixing of both substrates.

【0033】以上説明したように本発明によれば、半導
体基板の電極を粒子を混入した導電性接着剤を介して対
応する回路基板の電極に加圧接続するため、回路基板接
続端子及び半導体電極の厚み等のばらつきは、接続時に
粒子が厚さ方向に変形してばらつきを吸収して支えるた
め、安定した接続を得ることができる。さらに導電性接
着剤が電極部のみに配置されるため、安定した極小ピッ
チの電極接続が可能である。したがって、この実施例に
よっても、接続する電極部に導電性接着剤10及び粒子
9を介することにより、例えばLEDアレイ装置におけ
る接続抵抗のばらつきからくる輝度低下や輝度ばらつき
はなく、安定した接続状態が得られる。
As described above, according to the present invention, since the electrode of the semiconductor substrate is pressure-connected to the electrode of the corresponding circuit substrate through the conductive adhesive containing particles, the circuit board connecting terminal and the semiconductor electrode are connected. With respect to variations in the thickness and the like, the particles are deformed in the thickness direction at the time of connection to absorb and support the variations, so that a stable connection can be obtained. Further, since the conductive adhesive is disposed only on the electrode part, stable electrode connection with a very small pitch is possible. Therefore, also in this embodiment, by interposing the conductive adhesive 10 and the particles 9 in the electrode portion to be connected, there is no decrease in brightness or variation in brightness due to, for example, the dispersion of connection resistance in the LED array device, and a stable connection state is obtained. can get.

【0034】上記実施例においても、半導体基板を他の
回路基板と接続する場合について説明したが半導体基板
に限定する必要はなく他の回路基板においても本発明は
実施することができる。
In the above embodiment, the case where the semiconductor substrate is connected to another circuit board has been described, but the invention is not limited to the semiconductor substrate and the present invention can be implemented in other circuit boards.

【0035】[0035]

【発明の効果】以上説明したように本発明によれば、基
板の厚みや導電性粒子数の多少に拘らず接続時には第1
の導電性粒子が変形して導通し、第2の粒子が圧力を支
えて一定の厚さに抑えるため、安定した接続を得ること
ができる。
As described above, according to the present invention, the first connection is made regardless of the thickness of the substrate and the number of conductive particles.
Since the conductive particles are deformed and become conductive, and the second particles support the pressure to suppress the thickness to a constant value, a stable connection can be obtained.

【0036】さらに、本発明によれば、接続端子及び電
極の厚み等のばらつきは、接続時に粒子が厚さ方向に変
形してばらつきを吸収して支えるため、安定した接続を
得ることができる。
Further, according to the present invention, the variation in the thickness of the connection terminal and the electrode is supported by absorbing and supporting the variation due to the deformation of the particles in the thickness direction at the time of connection, so that a stable connection can be obtained.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明になる基板の接続方法の一実施例を説明
する図で、電極の接続が行われた基板の構成を示す部分
断面図である。
FIG. 1 is a diagram for explaining an embodiment of a substrate connecting method according to the present invention, and is a partial cross-sectional view showing a configuration of a substrate to which electrodes are connected.

【図2】本発明になる図1の基板の接続方法を順次示す
断面図である。
2A to 2D are sectional views sequentially showing a method of connecting the substrates of FIG. 1 according to the present invention.

【図3】本発明になる基板の接続方法の他の実施例を説
明する図で、電極の接続が行われた基板の構成を示す部
分断面図である。
FIG. 3 is a view for explaining another embodiment of the board connecting method according to the present invention, and is a partial cross-sectional view showing the structure of the board to which electrodes are connected.

【図4】本発明になる図3の基板の接続方法を順次示す
断面図である。
4A to 4C are sectional views sequentially showing a method of connecting the substrates of FIG. 3 according to the present invention.

【符号の説明】[Explanation of symbols]

1 半導体基板、 2 半導体基板電極、 3 回路基板、 4 回路基板の接続端子(電極)、 5 絶縁性接着剤(接合剤)、 6 第2の粒子、 7 導電性の第1の粒子、 8 絶縁性接着剤(接合剤)、 9 粒子、 10 導電性接着剤、 11 絶縁性接着剤供給漕。 DESCRIPTION OF SYMBOLS 1 semiconductor substrate, 2 semiconductor substrate electrode, 3 circuit board, 4 circuit board connection terminal (electrode), 5 insulating adhesive (bonding agent), 6 2nd particle, 7 conductive 1st particle, 8 insulation Adhesive (bonding agent), 9 particles, 10 conductive adhesive, 11 insulating adhesive supply tank.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 // G02F 1/1345 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI technical display part // G02F 1/1345

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】電極を有する第1の基板と、電極を有する
第2の基板との接続方法において、 粒径が大きく柔らかい導電性の第1の粒子と粒径が小さ
く硬い第2の粒子とが接合剤中に混合された導電用接合
剤を、前記第1及び第2の基板の電極間に介在させて圧
着して、 前記第1及び第2の基板間に介在している前記導電性の
第1の粒子が厚み方向につぶされて電極間を導通させ、
かつ、前記第2の粒子により基板間隔を一定に保って、
前記第1及び第2の基板を接続するようにしたことを特
徴とする基板の接続方法。
1. A method for connecting a first substrate having an electrode and a second substrate having an electrode, wherein conductive first particles having a large particle size and soft second particles having a small particle size are used. The conductive bonding agent mixed in the bonding agent is interposed between the electrodes of the first and second substrates to be pressure-bonded, and the conductive material interposed between the first and second substrates. The first particles of are squeezed in the thickness direction to conduct electricity between the electrodes,
Also, the second particles keep the substrate spacing constant,
A method of connecting substrates, wherein the first and second substrates are connected to each other.
【請求項2】電極を有する第1の基板と、電極を有する
第2の基板との接続方法において、 所定粒径の粒子が導電性の接合剤中に混合された導電用
接合剤を、前記第1及び第2の基板の電極間に介在させ
て圧着して、 前記第1及び第2の基板の間に介在している前記導電性
の接合剤で電極間を導通させ、かつ、前記粒子により基
板間隔を一定に保って、前記第1及び第2の基板を接続
するようにしたことを特徴とする基板の接続方法。
2. A method for connecting a first substrate having an electrode and a second substrate having an electrode, wherein a conductive bonding agent in which particles having a predetermined particle size are mixed in a conductive bonding agent is used. The first and second substrates are interposed between the electrodes and pressure-bonded, and the electrodes are electrically connected by the conductive bonding agent interposed between the first and second substrates, and the particles are The substrate connecting method is characterized in that the first and second substrates are connected while keeping the substrate spacing constant.
【請求項3】第1の基板は電極を有する半導体基板で、
第2の基板は前記半導体基板の電極がそれぞれ接続され
る接続端子電極が設けられた回路基板であることを特徴
とする請求項1または請求項2に記載の基板の接続方
法。
3. The first substrate is a semiconductor substrate having electrodes,
3. The method of connecting a substrate according to claim 1 or 2, wherein the second substrate is a circuit substrate provided with connection terminal electrodes to which electrodes of the semiconductor substrate are respectively connected.
【請求項4】接合剤が接着剤であることを特徴とする請
求項1または請求項2に記載の基板の接続方法。
4. The method for connecting substrates according to claim 1 or 2, wherein the bonding agent is an adhesive.
【請求項5】粒径が大きく硬度の柔らかい導電性の第1
の粒子と、粒径が小さく硬度の硬い第2の粒子とを、絶
縁性の接合剤中に混合してなることを特徴とする基板接
続用の導電用接合剤。
5. A conductive first having a large particle size and a soft hardness.
And a second particle having a small particle diameter and a high hardness are mixed in an insulating bonding agent, and a conductive bonding agent for connecting to a substrate.
JP5294374A 1993-10-29 1993-10-29 Connecting method for substrate and conductive joining agent Pending JPH07131153A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5294374A JPH07131153A (en) 1993-10-29 1993-10-29 Connecting method for substrate and conductive joining agent

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5294374A JPH07131153A (en) 1993-10-29 1993-10-29 Connecting method for substrate and conductive joining agent

Publications (1)

Publication Number Publication Date
JPH07131153A true JPH07131153A (en) 1995-05-19

Family

ID=17806897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5294374A Pending JPH07131153A (en) 1993-10-29 1993-10-29 Connecting method for substrate and conductive joining agent

Country Status (1)

Country Link
JP (1) JPH07131153A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013041778A (en) * 2011-08-18 2013-02-28 Sekisui Chem Co Ltd Manufacturing method of connection structure and connection structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013041778A (en) * 2011-08-18 2013-02-28 Sekisui Chem Co Ltd Manufacturing method of connection structure and connection structure

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