JPH07130947A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH07130947A
JPH07130947A JP29400293A JP29400293A JPH07130947A JP H07130947 A JPH07130947 A JP H07130947A JP 29400293 A JP29400293 A JP 29400293A JP 29400293 A JP29400293 A JP 29400293A JP H07130947 A JPH07130947 A JP H07130947A
Authority
JP
Japan
Prior art keywords
semiconductor device
output terminal
terminal
ground
terminating resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29400293A
Other languages
Japanese (ja)
Inventor
Akira Nishino
章 西野
Makoto Yomo
誠 四方
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP29400293A priority Critical patent/JPH07130947A/en
Publication of JPH07130947A publication Critical patent/JPH07130947A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To cut down the number of bonding wires in a mounting state by a method wherein the terminal resistor of a semiconductor device which drives a drive load connected to an output terminal is formed on the semiconductor device side. CONSTITUTION:The output side of an amplifier 2 which generates drive signals has an output terminal 3 connected, so that drive signals are output from the output terminal 3. Both sides of the output terminal 3 are provided with a pair of ground terminals 4, 5. The output terminal 3 which outputs drive signals has one end of the terminal resistor 6 connected, and a terminal 7 provided close to one ground terminal 5 has the other end of the terminal resistor 6 connected. An output terminal 6 which outputs drive signals is connected to the connection terminal of a drive load 8 via a bonding wire W1. The ground terminals 4, 5 provided on both sides of the output terminal 3 are connected to a ground 9 that is the reference potential point via bonding wires W2, W3.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、駆動信号を出力する出
力端子に接続された駆動負荷を駆動する際に用いられる
半導体装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device used for driving a driving load connected to an output terminal for outputting a driving signal.

【0002】[0002]

【従来の技術】図3は従来の半導体装置を説明する図で
あり、これは実装状態を示している。図示した半導体装
置30の構成においては、駆動信号を生成する増幅器3
1の出力端に出力端子32が接続されており、この出力
端子32から駆動信号が出力されるようになっている。
また、出力端子32の両側には一対の接地端子33,3
4が設けられている。
2. Description of the Related Art FIG. 3 is a diagram for explaining a conventional semiconductor device, which shows a mounted state. In the configuration of the semiconductor device 30 shown in the figure, the amplifier 3 that generates a drive signal is used.
An output terminal 32 is connected to the output terminal of 1, and a drive signal is output from this output terminal 32.
Also, a pair of ground terminals 33, 3 are provided on both sides of the output terminal 32.
4 are provided.

【0003】一方、半導体装置30を実装した状態で
は、駆動信号を出力する出力端子32が、ボンディング
ワイヤW1を介して駆動負荷35の接続端子35aに接
続される。また、出力端子32の両側に設けられた接地
端子33,34は、ボンディングワイヤW2,W3を介
して基準電位点であるグラウンド(ground)36
に接続される。さらに、駆動負荷35の接続端子35a
は、ボンディングワイヤW4を介して終端抵抗37の一
端37aに接続される。ここで、駆動負荷35の裏面は
グラウンド36に接地されている。また、終端抵抗37
の他端37bはボンディングワイヤW5を介して基準電
位点であるグラウンド36に接続される。そして、半導
体装置30は、増幅器31で生成された駆動信号を出力
端子32を介して駆動負荷35に出力し、この駆動信号
を受けて駆動負荷35が駆動するようになっている。
On the other hand, when the semiconductor device 30 is mounted, the output terminal 32 for outputting a drive signal is connected to the connection terminal 35a of the drive load 35 via the bonding wire W1. In addition, the ground terminals 33 and 34 provided on both sides of the output terminal 32 are ground 36 which is a reference potential point via the bonding wires W2 and W3.
Connected to. Further, the connection terminal 35a of the driving load 35
Is connected to one end 37a of the terminating resistor 37 via a bonding wire W4. Here, the back surface of the driving load 35 is grounded to the ground 36. In addition, the terminating resistor 37
The other end 37b is connected to the ground 36, which is the reference potential point, via the bonding wire W5. Then, the semiconductor device 30 outputs the drive signal generated by the amplifier 31 to the drive load 35 via the output terminal 32, and the drive load 35 is driven by receiving the drive signal.

【0004】また従来では、ウエハ状態で半導体装置3
0の特性を検査する場合、図4に示すように、駆動信号
を出力する出力端子32とその両側の接地端子33,3
4とに、それぞれ測定器50のプローブ針51を接触さ
せて測定を行っていた。
Further, conventionally, the semiconductor device 3 is in a wafer state.
When inspecting the characteristics of 0, as shown in FIG. 4, the output terminal 32 for outputting the drive signal and the ground terminals 33, 3 on both sides thereof are provided.
4 and the probe needle 51 of the measuring device 50 were brought into contact with each other to perform the measurement.

【0005】[0005]

【発明が解決しようとする課題】しかしながら上記従来
の半導体装置30においては、出力端子32と基準電位
点であるグラウンド36との間に接続される終端抵抗3
7が、半導体装置30とは別個に設けられた構成になっ
ているため、実際に半導体装置30を実装した状態で
は、ボンディングワイヤの接続本数が多くなり、ボンデ
ィングワイヤが持つインダクタンス分だけリアクタンス
が大きくなってしまう。このため、例えば半導体装置3
0が高周波回路を構成している場合は、リアクタンスが
大きくなることで、基準となるインピーダンスにズレが
生じ、良好な周波数特性が得られなくなる。
However, in the above-described conventional semiconductor device 30, the terminating resistor 3 connected between the output terminal 32 and the ground 36 which is the reference potential point.
Since 7 is provided separately from the semiconductor device 30, the number of bonding wires connected increases in a state where the semiconductor device 30 is actually mounted, and the reactance is increased by the inductance of the bonding wire. turn into. Therefore, for example, the semiconductor device 3
When 0 constitutes a high frequency circuit, the reactance becomes large, so that the reference impedance deviates, and good frequency characteristics cannot be obtained.

【0006】本発明は、上記問題を解決するためになさ
れたもので、実装状態におけるボンディングワイヤの接
続本数を削減することができる半導体装置を提供するこ
とを目的としている。
The present invention has been made to solve the above problems, and an object of the present invention is to provide a semiconductor device capable of reducing the number of bonding wires connected in a mounted state.

【0007】[0007]

【課題を解決するための手段】本発明は、上記目的を達
成するためになされたもので、駆動信号を出力する出力
端子を有し、この出力端子と基準電位点との間に終端抵
抗が接続された状態で、出力端子に接続された駆動負荷
を駆動する半導体装置において、上記終端抵抗が半導体
装置側に形成されたものである。
The present invention has been made to achieve the above object, and has an output terminal for outputting a drive signal, and a terminating resistor is provided between the output terminal and the reference potential point. In a semiconductor device that drives a drive load connected to an output terminal in a connected state, the terminating resistor is formed on the semiconductor device side.

【0008】[0008]

【作用】本発明の半導体装置においては、駆動負荷を駆
動する半導体装置側に終端抵抗が形成されているので、
半導体装置を実装した状態では、終端抵抗と駆動負荷と
を接続するためのボンディングワイヤおよび終端抵抗と
基準電位点とを接続するためのボンディングワイヤが不
要になり、同時に実装状態における構成も簡略化され
る。
In the semiconductor device of the present invention, since the terminating resistor is formed on the side of the semiconductor device that drives the driving load,
In a state where the semiconductor device is mounted, a bonding wire for connecting the terminating resistor and the driving load and a bonding wire for connecting the terminating resistor and the reference potential point are unnecessary, and at the same time, the configuration in the mounted state is simplified. It

【0009】[0009]

【実施例】以下、本発明の実施例について図面を参照し
ながら詳細に説明する。図1は本発明に係わる半導体装
置の一実施例を説明する図であり、これは実装状態を示
している。図示した半導体装置1の構成においては、駆
動信号を生成する例えば増幅器2の出力端に出力端子3
が接続されており、この出力端子3から駆動信号が出力
されるようになっている。また、出力端子3の両側には
一対の接地端子4,5が設けられている。さらに本実施
例では、駆動信号を出力する出力端子3に終端抵抗6の
一端が接続されており、この終端抵抗6の他端は、例え
ば一方の接地端子5に近接して設けられた端子7に接続
されている。
Embodiments of the present invention will now be described in detail with reference to the drawings. FIG. 1 is a diagram for explaining one embodiment of a semiconductor device according to the present invention, which shows a mounted state. In the configuration of the semiconductor device 1 shown in the figure, for example, the output terminal of the amplifier 2 for generating the drive signal
Are connected, and a drive signal is output from the output terminal 3. A pair of ground terminals 4 and 5 are provided on both sides of the output terminal 3. Further, in the present embodiment, one end of the terminating resistor 6 is connected to the output terminal 3 that outputs a drive signal, and the other end of the terminating resistor 6 is, for example, a terminal 7 provided close to one ground terminal 5. It is connected to the.

【0010】一方、半導体装置1を実装した状態では、
駆動信号を出力する出力端子3が、ボンディングワイヤ
W1を介して駆動負荷8の接続端子8aに接続される。
また、出力端子3の両側に設けられた接地端子4,5
は、ボンディングワイヤW2,W3を介して基準電位点
であるグラウンド9に接続される。ここで、駆動負荷8
の裏面はグラウンド9に接地されている。さらに、終端
抵抗6に接続した端子7は、これに隣接する一方の接地
端子5にボンディングワイヤW4を介して接続される。
そして、半導体装置1は、増幅器2で生成された駆動信
号を出力端子3を介して駆動負荷8に出力し、この駆動
信号を受けて駆動負荷8が駆動するようになっている。
ちなみに、駆動負荷8が例えば光変調器である場合は、
半導体装置1がその光変調器を駆動するための駆動回路
となる。
On the other hand, when the semiconductor device 1 is mounted,
The output terminal 3 that outputs a drive signal is connected to the connection terminal 8a of the drive load 8 via the bonding wire W1.
In addition, the ground terminals 4 and 5 provided on both sides of the output terminal 3, respectively.
Is connected to the ground 9 which is a reference potential point via bonding wires W2 and W3. Here, drive load 8
Is grounded to the ground 9. Further, the terminal 7 connected to the terminating resistor 6 is connected to one of the ground terminals 5 adjacent thereto via the bonding wire W4.
Then, the semiconductor device 1 outputs the drive signal generated by the amplifier 2 to the drive load 8 via the output terminal 3, and the drive load 8 is driven by receiving this drive signal.
By the way, when the drive load 8 is, for example, an optical modulator,
The semiconductor device 1 serves as a drive circuit for driving the optical modulator.

【0011】このように本実施例においては、駆動信号
を出力する出力端子3と基準電位点であるグラウンド9
との間に接続される終端抵抗6が、駆動負荷8を駆動す
る半導体装置1側に形成されている。したがって、上記
従来例では半導体装置とは別個に終端抵抗が設けられて
いたので、終端抵抗と駆動負荷とを接続するためのボン
ディングワイヤおよび終端抵抗とグラウンド(基準電位
点)とを接続するためのボンディングワイヤを必要とし
ていたが、本実施例ではそれらのボンディングワイヤが
不要となる。また、これと同時に、半導体装置1を実装
した際の構成についても、半導体装置1側に終端抵抗6
を形成したことで大幅に簡略化される。
As described above, in this embodiment, the output terminal 3 for outputting the drive signal and the ground 9 which is the reference potential point.
A terminating resistor 6 connected between and is formed on the side of the semiconductor device 1 that drives the drive load 8. Therefore, since the terminating resistor is provided separately from the semiconductor device in the above-mentioned conventional example, the bonding wire for connecting the terminating resistor and the driving load and the terminating resistor and the ground (reference potential point) are connected. Although the bonding wires were required, these bonding wires are unnecessary in this embodiment. At the same time, regarding the configuration when the semiconductor device 1 is mounted, the terminating resistor 6 is provided on the semiconductor device 1 side.
Since it is formed, it is greatly simplified.

【0012】さらに本実施例では、終端抵抗6の他端が
電位的にフローティング状態にある端子7に接続されて
いるため、ウエハ状態で半導体装置1の特性を検査する
場合は、図2に示すように、駆動信号を出力する出力端
子3とその両側の接地端子4,5とに、それぞれ測定器
10のプローブ針11を接触させることにより、従来通
りの測定を行うことができる。
Further, in this embodiment, since the other end of the terminating resistor 6 is connected to the terminal 7 which is in a potential floating state, when inspecting the characteristics of the semiconductor device 1 in a wafer state, it is shown in FIG. As described above, the conventional measurement can be performed by bringing the probe needle 11 of the measuring device 10 into contact with the output terminal 3 that outputs the drive signal and the ground terminals 4 and 5 on both sides thereof.

【0013】なお、上記実施例においては、終端抵抗6
に接続した端子7が一方の接地端子5に近接して配置さ
れ、半導体装置1を実装した状態では、端子7と接地端
子5とがボンディングワイヤW4を介して接続される構
成になっているが、これはボンディングワイヤW4の長
さを出来るだけ短くする、つまりボンディングワイヤの
インダクタンス分を出来るだけ小さくするための配慮で
あり、本発明の半導体装置はこれに限らず、例えば端子
7を任意の位置に配置して、実装時には、これをボンデ
ィングワイヤを介して直にグラウンド(基準電位点)9
に接続させることもできる。
In the above embodiment, the terminating resistor 6
In the state where the semiconductor device 1 is mounted, the terminal 7 and the ground terminal 5 are connected to each other via the bonding wire W4. This is a consideration for shortening the length of the bonding wire W4 as much as possible, that is, for reducing the inductance of the bonding wire as much as possible, and the semiconductor device of the present invention is not limited to this. When mounting, mount it directly to the ground (reference potential point) 9 via the bonding wire.
Can also be connected to.

【0014】[0014]

【発明の効果】以上、説明したように本発明によれば、
駆動信号を出力する出力端子と基準電位点との間に接続
される終端抵抗が半導体装置側に形成されているので、
従来よりも実装状態におけるボンディングワイヤの接続
本数を削減でき、その分だけリアクタンスを小さくする
ことができる。その結果、例えば半導体装置が高周波回
路を構成している場合は、リアクタンスが小さくなるこ
とで、基準となるインピーダンスのズレも小さくなり、
より良好な周波数特性を得ることが可能となる。また、
終端抵抗を半導体装置側に形成することで、実装状態に
おける構成の簡略化も図られる。
As described above, according to the present invention,
Since the terminating resistor connected between the output terminal that outputs the drive signal and the reference potential point is formed on the semiconductor device side,
The number of bonding wires connected in the mounted state can be reduced as compared with the related art, and the reactance can be reduced accordingly. As a result, for example, when the semiconductor device constitutes a high-frequency circuit, the reactance is reduced, and the deviation of the reference impedance is also reduced.
It becomes possible to obtain better frequency characteristics. Also,
By forming the terminating resistor on the semiconductor device side, the configuration in the mounted state can be simplified.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係わる半導体装置の一実施例を説明す
る図である。
FIG. 1 is a diagram illustrating an embodiment of a semiconductor device according to the present invention.

【図2】実施例における半導体装置の測定形態を示す図
である。
FIG. 2 is a diagram showing a measurement mode of a semiconductor device in an example.

【図3】従来の半導体装置を説明する図である。FIG. 3 is a diagram illustrating a conventional semiconductor device.

【図4】従来例における半導体装置の測定形態を示す図
である。
FIG. 4 is a diagram showing a measurement mode of a semiconductor device in a conventional example.

【符号の説明】[Explanation of symbols]

1 半導体装置 3 出力端子 6 終端抵抗 8 駆動負荷 9 グラウンド(基準電位点) 1 semiconductor device 3 output terminal 6 terminating resistor 8 driving load 9 ground (reference potential point)

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 駆動信号を出力する出力端子を有し、前
記出力端子と基準電位点との間に終端抵抗が接続された
状態で、前記出力端子に接続された駆動負荷を駆動する
半導体装置において、 前記終端抵抗が前記半導体装置側に形成されていること
を特徴とする半導体装置。
1. A semiconductor device having an output terminal for outputting a drive signal and driving a drive load connected to the output terminal in a state where a terminating resistor is connected between the output terminal and a reference potential point. In the semiconductor device, the terminating resistor is formed on the semiconductor device side.
JP29400293A 1993-10-29 1993-10-29 Semiconductor device Pending JPH07130947A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29400293A JPH07130947A (en) 1993-10-29 1993-10-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29400293A JPH07130947A (en) 1993-10-29 1993-10-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH07130947A true JPH07130947A (en) 1995-05-19

Family

ID=17801977

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29400293A Pending JPH07130947A (en) 1993-10-29 1993-10-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH07130947A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7106092B2 (en) 2002-10-23 2006-09-12 Renesas Technology Corp. Semiconductor device with bus terminating function

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7106092B2 (en) 2002-10-23 2006-09-12 Renesas Technology Corp. Semiconductor device with bus terminating function
US7116128B2 (en) 2002-10-23 2006-10-03 Renesas Technology Corp. Semiconductor device with bus terminating function
US7221184B2 (en) 2002-10-23 2007-05-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with bus terminating function
US7358759B2 (en) 2002-10-23 2008-04-15 Renesas Technology Corp. Semiconductor device with bus terminating function
US7375545B2 (en) 2002-10-23 2008-05-20 Renesas Technology Corp. Semiconductor device with bus terminating function

Similar Documents

Publication Publication Date Title
JPS6333882A (en) Drive circuit for laser diode
JPH07130947A (en) Semiconductor device
JP3218797B2 (en) Method for manufacturing high-frequency circuit module
KR940000429B1 (en) Oscillator
KR100257526B1 (en) Layout method of a transversal surface acoustic wave filter
CN115241733B (en) Heat sink structure and method for testing laser chip
JPH05251939A (en) Microwave circuit
JPH09213868A (en) Lead frame for microwave semiconductor integrated circuit
JP2836364B2 (en) High frequency semiconductor device
JPS63303506A (en) Surface accoustic wave device
JP2814608B2 (en) Wire bonding method
JPH08153758A (en) Device and method for ultrasonic wire bonding
KR100257527B1 (en) Layout method of a transversal surface acoustic wave filter
JPH031576A (en) Package for high frequency photoelectric transducer
JP2793455B2 (en) High frequency IC
SU1667226A2 (en) Rectangular pulse driver
JPS6355804B2 (en)
KR100257528B1 (en) Layout method of a longitudinally coupled surface acoustic wave filter
JPH09102521A (en) Probe card
JP2003289208A (en) Connection structure of high-frequency line
JPH088288B2 (en) Integrated circuit and manufacturing method thereof
JPH08306709A (en) High frequency semiconductor device
JPH04207404A (en) High frequency device connector
JPH11233745A (en) Photo-diode array
JP2000150583A (en) Gang bonding device