JPH07124438A - Waste treatment equipment of vapor growth device - Google Patents

Waste treatment equipment of vapor growth device

Info

Publication number
JPH07124438A
JPH07124438A JP5273403A JP27340393A JPH07124438A JP H07124438 A JPH07124438 A JP H07124438A JP 5273403 A JP5273403 A JP 5273403A JP 27340393 A JP27340393 A JP 27340393A JP H07124438 A JPH07124438 A JP H07124438A
Authority
JP
Japan
Prior art keywords
chamber
waste
waste treatment
adsorbed
adsorption
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5273403A
Other languages
Japanese (ja)
Inventor
Michio Murata
道夫 村田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP5273403A priority Critical patent/JPH07124438A/en
Publication of JPH07124438A publication Critical patent/JPH07124438A/en
Pending legal-status Critical Current

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  • Treating Waste Gases (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To provide the method for collecting efficiently waste whose main component is a substance whose vapor pressure is high at ordinary temperature, contained in exhaust gas from the vapor growth device, for instance, photophorus. CONSTITUTION:This processor is provided with two chambers of an adsorption changer 11 and a takeout chamber 13 separated by a value, waste is adsorbed temporarily in the adsorption chamber 11, and subsequently, by opening the value 12, an adsorbed substance is heated and dissociated, and adsorbed again on the takeout chamber side. After closing the valve 12, the adsorbed waste is collected.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は廃棄物処理装置及び当該
処理装置を備えた気相成長装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a waste treatment apparatus and a vapor phase growth apparatus equipped with the treatment apparatus.

【0002】[0002]

【従来技術】従来、この種の気相成長装置の排ガス処理
装置としては図4(減圧成長装置の場合)或いは図5
(常圧成長装置の場合)に示される構成を採るのが一般
的であった。すなわち、成長炉からの排出ガスに含まれ
る微粉末個体成分はフィルターで採集され、気体成分は
除害装置内に備えられたた吸着剤により固定化処理で回
収されていた。
2. Description of the Related Art Conventionally, as an exhaust gas treating apparatus of this type of vapor phase growth apparatus, FIG.
It was general to adopt the configuration shown in (in the case of an atmospheric pressure growth apparatus). That is, the fine powder solid component contained in the exhaust gas from the growth reactor was collected by the filter, and the gas component was collected by the immobilization treatment by the adsorbent provided in the abatement device.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、前記構
成の排気ガス処理システムでは、例えば排ガス中に燐
(P)などの様な常温で個体或いは液体であるが昇華
点、沸点が常温付近にあって容易に気化する物質を含む
場合には次の様な問題が顕在していた。すなわち、成長
炉中では気体であったものが、排気配管中を送られてい
る途中で冷却され液化、固化し配管内に付着し配管及び
フィルター詰まりとなる問題を生じていた。また一度配
管内に付着した場合には、室温での蒸気圧が高いため容
易に解離、吸着を繰り返して配管内を移動し、除害装置
まで達してしまい同装置の除害能力の低下を招いてしま
っていた。
However, in the exhaust gas treatment system having the above-mentioned structure, the exhaust gas treatment system is solid or liquid at room temperature, such as phosphorus (P) in the exhaust gas, but has a sublimation point and a boiling point around room temperature. When a substance that easily vaporizes is included, the following problems have been revealed. That is, there was a problem that what was gas in the growth furnace was cooled and liquefied and solidified while being sent through the exhaust pipe and adhered to the pipe to clog the pipe and the filter. In addition, once it has adhered to the inside of the pipe, the vapor pressure at room temperature is high, so it is easily dissociated and adsorbed repeatedly to move inside the pipe and reach the abatement device, which lowers the abatement capacity of the device. It was gone.

【0004】これまでの技術では目詰まりしたフィルタ
ー、能力低下を来した除害剤を頻繁に交換したり配管を
ベークするなどの対策を施してきたが、その都度装置を
停止させなければならず、稼働率の低下、部品交換費用
の増加という不利な面を招いていた。
The conventional techniques have taken measures such as frequent replacement of a clogged filter, a detoxifying agent whose performance has deteriorated, and baking of piping, but the apparatus must be stopped each time. However, it has brought about the disadvantages of lower operating rates and higher parts replacement costs.

【0005】[0005]

【課題を解決するための手段】本発明は上記説明にもあ
る様にこれまで回収、取扱いが困難であった室温で蒸気
圧の高い物質を含む廃棄物を効率的に回収、除去できる
方法を提供することにある。このため本発明では排気ラ
インの途中に蒸気圧の高い物質を効率的に吸着し、かつ
それら物質を解離するための加熱機構を備える第1の室
(排気物吸着室)と、この吸着室の直近にゲートバルブ
を介して設けられ、吸着室より解離した物質を排気ライ
ンとは別の場所に再度吸着させ、そのまま取り出せる構
造を有する第2の室(廃棄物取出室)とより構成される
廃棄物処理装置を排気ライン中に設置する。
As described in the above description, the present invention provides a method for efficiently recovering and removing waste containing a substance having a high vapor pressure at room temperature, which has been difficult to recover and handle until now. To provide. Therefore, in the present invention, a first chamber (exhaust gas adsorption chamber) provided with a heating mechanism for efficiently adsorbing a substance having a high vapor pressure in the middle of the exhaust line and dissociating the substance, and the adsorption chamber Disposal consisting of a second chamber (waste extraction chamber), which is provided in the immediate vicinity via a gate valve and has a structure in which substances dissociated from the adsorption chamber can be adsorbed again at a place different from the exhaust line and taken out as they are Install the waste treatment equipment in the exhaust line.

【0006】[0006]

【作用】以下図1に従って説明する。気相成長を行って
いる時は廃棄物吸着室11と取出室13との間のバルブ
12は閉じられ、成長炉よりの排気ガスは廃棄物吸着室
11だけを通過させる。この時、同室全体或いは吸着機
構部を冷却することでより効率的な吸着が可能となる。
成長終了後排気ラインと本廃棄処理装置を遮断し、吸着
室11と取出室13との間のバルブ12を開とする。こ
の状態で吸着室の加熱装置103を作動させると同室に
吸着されていた物質が解離し、廃棄物取出室13に移
動、再吸着される。取出室、或いは取出室の再吸着機構
を冷却すれば再吸着はいっそう促進される。吸着室と取
出室間のバルブ12を閉じた後、取出室に再吸着した廃
棄物を回収することで、これまで採集除去が困難であっ
た室温で蒸気圧の高い廃棄物の処理が可能となる。
The operation will be described below with reference to FIG. During the vapor phase growth, the valve 12 between the waste adsorption chamber 11 and the extraction chamber 13 is closed, and the exhaust gas from the growth furnace passes only the waste adsorption chamber 11. At this time, more efficient adsorption becomes possible by cooling the entire chamber or the adsorption mechanism.
After the growth is completed, the exhaust line and the waste disposal device are shut off, and the valve 12 between the adsorption chamber 11 and the extraction chamber 13 is opened. When the heating device 103 of the adsorption chamber is operated in this state, the substance adsorbed in the chamber is dissociated, moved to the waste extraction chamber 13, and re-adsorbed. If the extraction chamber or the re-adsorption mechanism in the extraction chamber is cooled, the re-adsorption is further promoted. After the valve 12 between the adsorption chamber and the extraction chamber is closed, the waste re-adsorbed in the extraction chamber can be collected to enable the treatment of waste with high vapor pressure at room temperature, which was difficult to collect and remove until now. Become.

【0007】ここで、廃棄物に毒性がある場合には取出
室13を排気する機構と、不活性ガスにより同室をパー
ジする機構を備えていれば毒性ガスが除去でき安全に作
業を進めることができる。また、排気物に発火性物質が
含まれている場合には同室13に酸化性ガスを導入する
機構を設け、取出す前に排気物を燃焼或いは酸化させて
おくと、安全に作業が行える。
[0007] Here, if a mechanism for exhausting the extraction chamber 13 when the waste is toxic and a mechanism for purging the extraction chamber 13 with an inert gas are provided, the toxic gas can be removed and the work can proceed safely. it can. If the exhaust contains an ignitable substance, a mechanism for introducing an oxidizing gas into the chamber 13 is provided, and the exhaust can be burned or oxidized before taking it out, so that the work can be performed safely.

【0008】[0008]

【実施例】図1に本発明に係る第1の実施例を示す.廃
棄物吸着室11はステンレスを材料として構成され、成
長炉からの排ガス導入口101と、排出口102を備え
ている。同室の内部は邪魔板110を設け実質的に表面
積を増加させるとともに、排ガスの同室内での滞留時間
を長くし吸着効率を高めている。本室の外壁にはヒータ
103が装着され150℃程度までの加熱を可能として
いる。
1 shows a first embodiment according to the present invention. The waste adsorption chamber 11 is made of stainless steel and has an exhaust gas introduction port 101 from the growth reactor and an exhaust port 102. The interior of the chamber is provided with a baffle plate 110 to substantially increase the surface area and to increase the retention time of the exhaust gas in the chamber to enhance the adsorption efficiency. A heater 103 is attached to the outer wall of the main chamber to enable heating up to about 150 ° C.

【0009】ゲートバルブ12で隔てられた廃棄物取出
室13にはフィンが装備され前記吸着室と同様に表面積
を増大させ吸着効率を高めている。本室はゲートバルブ
にO−リング接続されているため、この箇所より容易に
取り外すことが可能である。その結果再吸着された廃棄
物を簡単に回収することができる。
The waste extraction chamber 13 separated by the gate valve 12 is equipped with fins to increase the surface area and enhance the adsorption efficiency as in the adsorption chamber. Since the main chamber is connected to the gate valve by the O-ring, it can be easily removed from this portion. As a result, the re-adsorbed waste can be easily collected.

【0010】図2は本発明に係る第2の実施例で、第1
の実施例に加えてさらに廃棄物の回収効率を高めた構成
である。廃棄物吸着室11には冷剤による冷却手段を備
えている。吸着室の周囲を取り囲む様に断熱容器が備え
られ、ここにドライアイス、液体窒素等の冷剤104を
導入して吸着効率を高めることができる。本実施例では
側壁を冷却する構造となっているが、断熱容器を同室の
頭部に設け邪魔板を直接冷却する構造を採れば効率はさ
らに改善される。
FIG. 2 shows a second embodiment according to the present invention.
In addition to the embodiment described above, the structure is such that the collection efficiency of waste is further improved. The waste adsorption chamber 11 is equipped with a cooling means using a cooling agent. A heat insulating container is provided so as to surround the adsorption chamber, and a cooling agent 104 such as dry ice or liquid nitrogen can be introduced therein to enhance the adsorption efficiency. Although the side wall is cooled in the present embodiment, the efficiency can be further improved by adopting a structure in which a heat insulating container is provided at the head of the same room to directly cool the baffle plate.

【0011】本実施例においては廃棄物取出室13は着
脱可能な構造を有していないが、同室内部に吸着面積を
広くするフィン構造体を設け、これを同室の低部から抜
き取ることで再吸着した廃棄物を容易に回収できる。ま
た本室には不活性ガス導入ライン105及び排気ライン
106が備えられ、取出室を解放する前に窒素等の不活
性ガスで内部をパージすることにより毒性残留ガスを除
去できる構造となっている。
In this embodiment, the waste extraction chamber 13 does not have a detachable structure, but a fin structure for increasing the adsorption area is provided in the interior of the same, and the fin structure is removed from the lower part of the same chamber to re-install it. The adsorbed waste can be easily collected. Further, the main chamber is provided with an inert gas introduction line 105 and an exhaust line 106, and has a structure capable of removing toxic residual gas by purging the inside with an inert gas such as nitrogen before opening the extraction chamber. .

【0012】図3は本発明に係る廃棄物処理装置を備え
た気相成長装置の具体例を示す。原料ガスとしてはアル
シン202、フォスフィン203、トリメチルインジウ
ム(TMI)204、トリエチルガリウム(TEG)2
05を使用しInGaAsP結晶の成長を目的としてい
る。成長を行っている間は廃棄物処理装置のバイパスバ
ルブ55を閉じ、処理装置の入出バルブ53、54を開
とする。成長炉からの排出ガスの中には未分解のアルシ
ン、フォスフィン、リン或いは個体成分のInAs、G
aAs、InP,GaP、ヒ素等が含まれている。この
うち未分解のアルシン、フォスフィンは気体のまま配管
内に付着することもなく除害装置まで導かれ処理され
る。InAs、GaAs、InP、GaP、ヒ素等の個
体成分はフィルター57で回収される。リンを主成分と
する物質は真空ポンプ52までは気体状態で流れてゆ
き、廃棄物処理装置の吸着室11で漸次固化吸着され
る。
FIG. 3 shows a concrete example of a vapor phase growth apparatus equipped with a waste treatment apparatus according to the present invention. As source gas, arsine 202, phosphine 203, trimethylindium (TMI) 204, triethylgallium (TEG) 2
No. 05 is used to grow InGaAsP crystal. While growing, the bypass valve 55 of the waste treatment device is closed, and the inlet / outlet valves 53 and 54 of the treatment device are opened. In the exhaust gas from the growth reactor, undecomposed arsine, phosphine, phosphorus or InAs, G which is a solid component
It contains aAs, InP, GaP, arsenic and the like. Of these, undecomposed arsine and phosphine are led to the abatement device and treated without being attached as gas in the pipe. Individual components such as InAs, GaAs, InP, GaP, and arsenic are collected by the filter 57. The substance containing phosphorus as a main component flows up to the vacuum pump 52 in a gaseous state, and is gradually solidified and adsorbed in the adsorption chamber 11 of the waste treatment device.

【0013】成長終了後バイパスバルブ55を開、処理
装置の入出バルブ53、54を閉として同装置を孤立化
する。その後ゲートバルブ12を開き、吸着室を120
℃で30分程度加熱する一方、取出室を10℃以下に冷
却すると、成長中に吸着室で吸着された廃棄物のほとん
どは取出室に移動する。その後ゲートバルブ12を閉じ
取出室を0.1気圧程度まで減圧した後、酸化性ガスと
して空気を導入する。この排気、酸化性ガス導入の操作
を数回繰り返すことで、取出室内の毒性ガス成分が除去
されると同時に、廃棄物表面が酸化され発火することが
なくなる。
After the growth is completed, the bypass valve 55 is opened and the inlet / outlet valves 53 and 54 of the processing apparatus are closed to isolate the apparatus. After that, the gate valve 12 is opened and the adsorption chamber is opened to 120
When the extraction chamber is cooled to 10 ° C. or lower while being heated at 30 ° C. for about 30 minutes, most of the waste adsorbed in the adsorption chamber during growth moves to the extraction chamber. After that, the gate valve 12 is closed and the pressure in the extraction chamber is reduced to about 0.1 atm, and then air is introduced as an oxidizing gas. By repeating this operation of exhausting and introducing the oxidizing gas several times, the toxic gas component in the extraction chamber is removed and at the same time, the surface of the waste material is not oxidized and ignited.

【0014】本実施例においては減圧成長装置を示した
が、これを常圧成長装置に適用することも容易に可能で
ある。その際には排気ラインのなかで可能な限り成長炉
に近い箇所に本処理装置を設けることが望ましい。
Although a reduced pressure growth apparatus is shown in this embodiment, it can be easily applied to an atmospheric pressure growth apparatus. In that case, it is desirable to install this treatment device in the exhaust line as close to the growth reactor as possible.

【0015】[0015]

【発明の効果】本発明に係る廃棄物処理装置を気相成長
装置の排気ラインに備えることにより、常温で個体或い
は液体で蒸気圧の高い廃棄物を容易に効率よく、かつ安
全に回収することが可能となる。その結果成長装置のメ
ンテナンスが簡便、容易になり、稼働コストを低く抑え
ることができる。
EFFECT OF THE INVENTION By providing the waste treatment apparatus according to the present invention in the exhaust line of a vapor phase growth apparatus, it is possible to easily, efficiently and safely recover solid or liquid waste having a high vapor pressure at room temperature. Is possible. As a result, the maintenance of the growth apparatus is simple and easy, and the operating cost can be kept low.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係る第1の実施例に基づく廃棄物処理
装置。
FIG. 1 is a waste disposal device according to a first embodiment of the present invention.

【図2】本発明に係る第2の実施例に基づく廃棄物処理
装置。
FIG. 2 is a waste disposal device according to a second embodiment of the present invention.

【図3】本発明に係る第3の実施例に基づく減圧気相成
長装置の概念図。
FIG. 3 is a conceptual diagram of a reduced pressure vapor phase growth apparatus according to a third embodiment of the present invention.

【図4】従来に減圧気相成長装置を示す概念図。FIG. 4 is a conceptual diagram showing a conventional reduced pressure vapor phase growth apparatus.

【図5】従来の常圧気相成長装置を示す概念図。FIG. 5 is a conceptual diagram showing a conventional atmospheric pressure vapor phase growth apparatus.

【符号の説明】[Explanation of symbols]

11:廃棄物吸着室 12:仕切バルブ 13:廃棄物取出室 51:成長炉 52:真空ポンプ 53:入口バルブ 54:出口バルブ 55:バイパスバルブ 56:除害装置 57:フィルター 103:ヒーター 104:冷剤 105:不活性ガス導入ライン 106:排気ライン 107:Oーリング 108:酸化性ガス導入ライン 109:冷却水 11: Waste adsorption chamber 12: Partition valve 13: Waste extraction chamber 51: Growth furnace 52: Vacuum pump 53: Inlet valve 54: Outlet valve 55: Bypass valve 56: Harmful device 57: Filter 103: Heater 104: Cold Agent 105: Inert gas introduction line 106: Exhaust line 107: O-ring 108: Oxidizing gas introduction line 109: Cooling water

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 少なくとも二つの室より構成される装置
であって、第1の室は気相成長装置の排気ラインに挿入
され、同装置からの廃棄物を吸着する機構と、加熱する
ことにより前記吸着した物質を解離させる機能を有し、
第2の室は前記第1の室にバルブを介挿して直近に設け
られ、前記解離した物質を再び吸着する機能を有し、か
つ前記再吸着された物質は吸着したまま回収される機構
を有する廃棄物処理装置。
1. An apparatus comprising at least two chambers, wherein the first chamber is inserted into an exhaust line of the vapor phase growth apparatus, and has a mechanism for adsorbing waste from the apparatus and heating. Has a function of dissociating the adsorbed substance,
The second chamber is provided in the immediate vicinity of the first chamber via a valve, has a function of adsorbing the dissociated substance again, and a mechanism for collecting the re-adsorbed substance while adsorbing it. Waste treatment equipment having.
【請求項2】 前記第1の室に冷却機構が備えられてい
る第1項記載の廃棄物処理装置。
2. The waste treatment apparatus according to claim 1, wherein a cooling mechanism is provided in the first chamber.
【請求項3】 前記第2の室に備えられた再吸着機構に
は冷却手段が備えられている第1項記載の廃棄物処理装
置。
3. The waste treatment apparatus according to claim 1, wherein the re-adsorption mechanism provided in the second chamber is provided with a cooling unit.
【請求項4】 前記第2の室に排気機構を備えた第1項
記載の廃棄物処理装置。
4. The waste treatment device according to claim 1, wherein an exhaust mechanism is provided in the second chamber.
【請求項5】 前記第2の室に不活性ガス或いは酸化性
ガス導入機構が備えられた第1項記載の廃棄物処理装
置。
5. The waste treatment device according to claim 1, wherein an inert gas or oxidizing gas introduction mechanism is provided in the second chamber.
【請求項6】 前記第1項ないし第5項記載の廃棄物処
理装置を減圧ポンプの直後に備えた減圧気相成長装置。
6. A reduced pressure vapor phase growth apparatus comprising the waste treatment apparatus according to any one of claims 1 to 5 immediately after a reduced pressure pump.
【請求項7】 前記第1項ないし第5項記載の廃棄物処
理装置を反応炉の直後に備えた気相成長装置。
7. A vapor phase growth apparatus comprising the waste treatment apparatus according to any one of claims 1 to 5 immediately after a reaction furnace.
JP5273403A 1993-11-01 1993-11-01 Waste treatment equipment of vapor growth device Pending JPH07124438A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5273403A JPH07124438A (en) 1993-11-01 1993-11-01 Waste treatment equipment of vapor growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5273403A JPH07124438A (en) 1993-11-01 1993-11-01 Waste treatment equipment of vapor growth device

Publications (1)

Publication Number Publication Date
JPH07124438A true JPH07124438A (en) 1995-05-16

Family

ID=17527413

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5273403A Pending JPH07124438A (en) 1993-11-01 1993-11-01 Waste treatment equipment of vapor growth device

Country Status (1)

Country Link
JP (1) JPH07124438A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006110467A (en) * 2004-10-14 2006-04-27 Furukawa Co Ltd Phosphorus separation apparatus for semiconductor manufacturing apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006110467A (en) * 2004-10-14 2006-04-27 Furukawa Co Ltd Phosphorus separation apparatus for semiconductor manufacturing apparatus

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