JP2006110467A - Phosphorus separation apparatus for semiconductor manufacturing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a phosphorus separation apparatus for a semiconductor manufacturing apparatus capable of completely removing phosphorus in a safe form, contained in exhaust gas from the semiconductor manufacturing apparatus. <P>SOLUTION: This phosphorus separation apparatus 9 for the semiconductor manufacturing apparatus, which is composed of a column 11 through which exhaust gas from the semiconductor manufacturing apparatus passes, packing materials 19 comprising copper wires and a nickel porous material packed inside the column 11 and being in contact with the exhaust gas; and an electric resistance type heating furnace 17 heating the inside of the column 11 up to a depositing and solidifying temperature of phosphorus, is disposed on the downstream side of an exhaust gas passage 5a of the semiconductor manufacturing apparatus. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a phosphorus separator for a semiconductor manufacturing apparatus that separates and removes phosphorus from exhaust gas discharged from a semiconductor manufacturing apparatus in a safe form.

  Vapor phase epitaxy is often used for the production of compound semiconductor single crystal films. The main vapor deposition methods include a metal organic chemical vapor deposition method (MOCVD method) and a hydride vapor deposition method (HVPE method). For example, in the metal-organic chemical vapor deposition method of a III-V compound semiconductor, a group III and group V metal-organic gas is flowed over a heated single crystal substrate, and in the hydride vapor deposition method, a heated single crystal substrate is used. Then, a group III salt vapor and a group V hydride are allowed to flow through to epitaxially grow a compound semiconductor single crystal film having a target composition.

  In these vapor phase growth methods, an excessive amount of group V raw material is usually flowed together with hydrogen as a carrier gas. For this reason, in the exhaust gas of a semiconductor manufacturing apparatus, unreacted V group raw material, the decomposition product of V group raw material, and hydrogen are contained in large quantities. When arsine, phosphine, or the like is used as the group V material, arsenic (As) or phosphorus (P) is contained in the decomposition product of the group V material.

  Arsine and phosphine as a group V raw material in the exhaust gas and their decomposition products are harmful substances, and phosphorus is ignitable. After removal, the exhaust gas is released to the atmosphere. In the abatement tower, metal oxides, metal hydroxides and basic metal carbonates are generally used as the abatement agent, and the abatement agent comes into contact with the Group V raw material and its decomposition products in the exhaust gas, The contacted Group V raw material and its decomposition products are chemically changed to safe substances and removed from the exhaust gas. For example, an abatement agent containing cupric hydroxide as a reaction main component is contacted with an exhaust gas containing arsenic or phosphorus to remove arsenic and phosphorus from the exhaust gas (see Patent Document 1).

  However, the abatement tower is effective in removing arsine and phosphine, which are group V materials, but it is difficult to remove arsenic and phosphorus, which are decomposition products, in an easy-to-handle and safe form. . In other words, arsenic and phosphorus adhere to the surface of the detoxifying agent and the inside of the detoxifying tower and are deposited, so that there is a problem that the ability to remove arsine and phosphine is quickly reduced. Therefore, in Patent Document 1, after exhaust gas is passed through a filter, mist or powdery arsenic or phosphorus is collected by the filter, and then the exhaust gas is contacted with a detoxifying agent containing cupric hydroxide as a main component of reaction. Has been proposed.

  In many cases, the decomposition product phosphorus takes the form of yellow phosphorus in the exhaust gas, and thus has a risk of spontaneous ignition in contact with the atmosphere. For this reason, when exchanging the filter and the detoxifying agent, it is necessary to pay close attention to preventing ignition, which complicates the work. In order to cope with this problem, a technique for safely removing yellow phosphorus from exhaust gas in an exhaust gas flow path from a semiconductor manufacturing apparatus to a detoxification tower has been studied.

  One such technique is to heat the exhaust gas to a sufficiently high temperature to decompose phosphine into phosphorous vapor, and then pass the exhaust gas through a reactor containing calcium oxide heated above 100 ° C. in the reactor. A detoxification method has been proposed in which oxygen and / or air is introduced into calcium oxide to produce calcium phosphate (see Patent Document 2).

Alternatively, phosphorus in exhaust gas is precipitated and solidified in oil by a low-temperature oil mist generated by an oil dispersion device provided in the trap device, and the solidified phosphorus is separated and removed from the oil by a solidified matter removal filter. Then, again, a phosphorus trap device for a semiconductor manufacturing apparatus has been proposed which is used as an oil for collecting and collecting phosphorus in a trap device and removes phosphorus from exhaust gas (see Patent Document 3).
Japanese Patent Laid-Open No. 10-99636 Japanese Patent Laid-Open No. 7-759 JP 2003-135926 A

However, the abatement method of Patent Document 2 has the following problems. Usually, since the exhaust gas of the III-V compound semiconductor manufacturing apparatus contains hydrogen, introducing oxygen or air into the calcium oxide in the reactor involves an explosion risk. In order to eliminate the danger of explosion, if oxygen and air are not introduced, calcium phosphate (Ca (PO ₃ ) ₂ , Ca ₂ P ₂ O ₇ , calcium phosphate, a reaction product of oxygen and oxygen, Ca ₂ (PO ₄ ) ₂ or the like) is not easily generated, and phosphorus cannot be efficiently removed.

The phosphorus trap apparatus for semiconductor manufacturing apparatus of Patent Document 3 has the following problems. Since the yellow phosphorus in the exhaust gas of the semiconductor manufacturing apparatus has a high viscosity, the phosphor solidified product removal filter is easily clogged. Moreover, since the phosphorus solidified substance in oil is yellow phosphorus, when transferring the yellow phosphorus collected by the phosphorus solidified removal filter, the risk that yellow phosphorus spontaneously ignites cannot be completely wiped out.
The present invention solves the above problems, and an object of the present invention is to provide a phosphorus separator for a semiconductor manufacturing apparatus that can completely remove phosphorus from the exhaust gas of the semiconductor manufacturing apparatus in a safe form. .

  The present invention adopts the following configuration in order to solve the problem. The phosphorus separator for a semiconductor manufacturing apparatus according to the invention of claim 1 includes a column through which the exhaust gas of the semiconductor manufacturing apparatus passes, a wire of copper, nickel, cobalt or cadmium and a porous material of copper, nickel, cobalt or cadmium. It comprises at least one and has a packing material packed in the column and brought into contact with the exhaust gas, and a heating means for heating the column to a temperature not lower than the precipitation solidification temperature of phosphorus.

According to the invention of claim 1, the inside of the column is heated to a temperature equal to or higher than the precipitation solidification temperature of phosphorus, the phosphorus in the exhaust gas becomes phosphorus vapor in the column, and the phosphorous vapor comes into contact with the packing material in the column and reacts. Phosphides are produced and phosphorus is separated from the exhaust gas.
Metals that easily generate phosphides by reacting with phosphorus vapor include alkaline earth metals (magnesium, calcium) and transition metals (titanium, zirconium, vanadium, niobium, tantalum, chromium, manganese, iron, cobalt, nickel, copper , Zinc and cadmium). When an alkaline earth metal is used as a filler and an alkaline earth metal and phosphorus vapor are reacted to produce a phosphide, the produced phosphide reacts rapidly with moisture in the atmosphere to generate harmful phosphine. Further, when a transition metal is used as a filler, since a dense oxide film is formed on the surface of the transition metal, the reaction between the transition metal and phosphorus vapor is inhibited.

However, when copper or nickel is used as a filler among transition metals, an oxide film such as Cu ₂ O or NiO formed on the metal surface is easily reduced by hydrogen in the exhaust gas, and the reaction activity of copper or nickel is increased. The metal surface is exposed. On the exposed metal surface of copper or nickel, copper phosphide or nickel phosphide is generated on the metal surface by reaction with phosphorus vapor in the exhaust gas, and phosphorus is separated from the exhaust gas as a phosphide. Copper phosphide includes Cu ₃ P and CuP _2, but the copper phosphide separated from the exhaust gas as a phosphide is mainly Cu ₃ P. Nickel phosphide includes Ni ₂ P, Ni ₅ P ₂ , Ni ₇ P ₃ , Ni ₅ P ₄ , NiP ₂ , NiP, and Ni ₁₂ P ₅ , and phosphorous separated from exhaust gas as phosphide. Nickel bromide is mainly Ni ₂ P. Cu ₃ P and Ni ₂ P are lower phosphides among copper phosphide and nickel phosphide, and do not decompose in the atmosphere and do not dissolve in hydrochloric acid or nitric acid. It has become a form.

  Of the transition metals, cobalt is affected by the politics of the country of origin and has a large price fluctuation and high price, but cobalt can also be used as a filler. When cobalt is used as the filler, the oxide film mainly composed of CoO formed on the metal surface is easily reduced by hydrogen, and the reactive metal surface of cobalt is exposed. Cobalt phosphide is produced by reaction with phosphorus vapor, and phosphorus is separated from the exhaust gas.

  Of the transition metals, cadmium is a specified chemical substance in the Industrial Safety Standards Law, so care should be taken in handling, but cadmium can also be used as a filler. When cadmium is used as the filler, the oxide film mainly composed of CdO formed on the metal surface is easily reduced by hydrogen, and the metal surface of reactive cadmium is exposed. The exposed metal surface of cadmium is in the exhaust gas. Cadmium phosphide is produced by reaction with phosphorus vapor, and phosphorus is separated from the exhaust gas.

  By using the filler as a wire, an appropriate contact with the exhaust gas can be obtained, and at the same time, the filler can smoothly pass through the gap between the wires intertwined with the exhaust gas, so that clogging of the filler can be suppressed. The diameter of the wire is not particularly limited, but the reaction rate between phosphorus in the exhaust gas and the filler increases when a thin wire is used. However, the cost increases when the diameter of the wire is reduced. Therefore, the diameter of the wire is selected in consideration of cost effectiveness. For example, if a copper wire having a diameter of 0.1 to 1 mm is used as the filler, an optimum cost-effectiveness can be achieved. The length of the wire is not particularly limited, but if a short chip-like wire is used, the packing ratio in the column and the contact area between the phosphorus vapor in the exhaust gas increase and the phosphorus separation performance is improved. The material is likely to be clogged. On the other hand, when a long wire is used, the filler can be made into a wool-like lump and the replacement work is easy. In consideration of the filling rate, the contact area with the phosphorus vapor in the exhaust gas, and the simplicity of the replacement work, an appropriate wire length is selected.

Since the porous material is generally an integrally formed product having a large specific surface area, the replacement work is easy, the contact area between the phosphorus vapor in the exhaust gas and the filler is large, and the phosphide is a pore in the porous material. It produces | generates to the surface and can remove phosphorus efficiently from waste gas. However, if the pore diameter of the porous material is too small, the pores of the porous material are likely to be blocked by phosphides, so the pressure in the column rises and the semiconductor manufacturing conditions become unstable. Therefore, when using the nickel foam metal used for the electrode of a nickel cadmium battery and the filter of an air cleaner as an example of a porous material, it is preferable that a specific surface area is 500-1000 m < ² > / m < ³ >. In addition, when the pore diameter of the porous material having a specific surface area of 500 to 1000 m ² / m ³ is expressed as the number of cells per unit length, it is 2 to 3 cells / cm.

When the filler is a combination of a wire and a porous material, it is possible to obtain a combination of suppression of clogging and high phosphorus separation efficiency. There is no particular limitation on the method of combining the wire and the porous material.
Further, by adopting a porous material having a pore size suitable for collecting particulates in the exhaust gas, it is possible to substitute for a particulate removal filter that is generally installed at the subsequent stage of the phosphorus separator. Furthermore, it is possible to enhance both the effects of phosphorus separation and fine particle removal by using several types of porous materials having different pore sizes in an overlapping manner.

  The heating means only needs to be able to heat the column to a temperature equal to or higher than the precipitation solidification temperature of phosphorus in order to convert phosphorus in the exhaust gas into phosphorus vapor. If the temperature inside the column is equal to or higher than the precipitation solidification temperature of phosphorus, phosphorus vapor reacts with the packing material at a high reaction rate. However, if the temperature in the column is lower than the precipitation solidification temperature of phosphorus, the phosphorus solidifies from the exhaust gas. It is considered that the reaction rate with the filler becomes slow and yellow phosphorus remains attached to the surface of the filler, so that phosphorus cannot be separated in a safe form. As a heating means, a resistance heating type electric furnace is optimal because it is inexpensive and the temperature control is simple, but an infrared condensing heating type electric furnace is suitable for rapidly raising and lowering the temperature of the filler.

A phosphorus separator for a semiconductor manufacturing apparatus according to a second aspect of the present invention is the phosphorus separator for a semiconductor manufacturing apparatus according to the first aspect, wherein the porous material is a foam metal having a porosity of 98% or more.
According to the invention of claim 2, the porous material mainly includes a sintered metal and a foamed metal. The sintered metal is formed by sintering powder, whereas the foamed metal performs conductive treatment on the foamed polyurethane. After the application, plating is performed, followed by firing to form polyurethane by burning off. Therefore, the porosity of the foam metal is as high as 98% and is suitable as a filler for a phosphorus separator for semiconductor manufacturing equipment.

A phosphorus separator for a semiconductor manufacturing apparatus according to a third aspect of the present invention is the phosphorus separator for a semiconductor manufacturing apparatus according to the first or second aspect, wherein the column is porous on the exhaust gas inlet side and porous on the outlet side. Filled with material.
According to the invention of claim 3, most of the phosphorus in the exhaust gas is first separated by the wire, and a trace amount of phosphorus that could not be separated by the wire by the next porous material can be separated while suppressing clogging of the porous material. Therefore, phosphorus separation efficiency can be increased.

  Since the present invention is a phosphorus separator for a semiconductor manufacturing apparatus as described above, phosphorus can be completely removed from the exhaust gas of the semiconductor manufacturing apparatus as a safe form.

The best mode for carrying out the present invention will be described with reference to FIGS. FIG. 1 is a configuration diagram of an exhaust gas flow path of a semiconductor manufacturing apparatus equipped with a phosphorus separator for a semiconductor manufacturing apparatus according to the present invention, and FIG. 2 is a cross-sectional view of the phosphorus separator for a semiconductor manufacturing apparatus according to the present invention.
A semiconductor manufacturing apparatus 1 shown in FIG. 1 includes a reaction furnace 3 and is configured to be able to manufacture a compound semiconductor single crystal film using arsine and phosphine as group V materials.

  The exhaust gas flow path 5a is connected from the reaction furnace 3 of the semiconductor manufacturing apparatus 1 to the phosphorus separator 9 for semiconductor manufacturing apparatus, and a vacuum pump 7 is installed between the reaction furnace 3 and the phosphorus separator 9 for semiconductor manufacturing apparatus. ing. The exhaust gas flow path 5a and the vacuum pump 7 have a heating device (not shown), and the exhaust gas flow path 5a and the vacuum pump 7 are heated and maintained at a temperature equal to or higher than the precipitation solidification temperature of phosphorus. In addition, although the precipitation solidification temperature of phosphorus changes with the pressure and composition of exhaust gas, it is about 80-90 degreeC normally.

As shown in FIG. 2, the phosphorus separator 9 for semiconductor manufacturing apparatus includes a column 11, a filler 19, and an electric resistance heating furnace 17.
The column 11 includes a transparent quartz cylindrical housing 13 and stainless steel flanges 15 a and 15 b detachably attached to both ends of the housing 13. The lower end flange 15a is connected to the upstream exhaust gas passage 5a to form the exhaust gas inlet of the column 11, and the upper end flange 15b is connected to the downstream exhaust gas passage 5b to form the exhaust gas outlet of the column 11. Yes. Between the housing 13 and the flanges 15a and 15b, a heat-resistant fluororubber packing is mounted. The optimum size of the column 11 is selected according to the amount of phosphorus in the exhaust gas, the amount of the filler 19 and the heating temperature of the column 11.

A packing material 19 is packed in the column 11, and the packing material 19 includes a copper wire 19a and a nickel porous material 19b. The copper wire 19a is filled on the flange 15a side, and the nickel porous material 19b is filled on the flange 15b side. As the copper wire 19a, for example, an inexpensive copper wire scrap can be used, and its diameter is 0.1 to 1 mm, the length is 1 to 10 m, and it is compression molded to a size that can be inserted into the column 11 after bending. It is. As the nickel porous material 19b, for example, Celmet (registered trademark) manufactured by Sumitomo Electric Industries, Ltd. can be used, and the specific surface area is 500 to 1000 m ² / m ³ .

  An electric resistance heating furnace 17 serves as a heating means and covers the outer periphery of the housing 13. By opening the electric resistance heating furnace 17, the packing material 19 in the column 11 can be observed through the housing 13. . The inside of the column 11 is heated and maintained at a temperature not lower than the precipitation solidification temperature of phosphorus and not higher than 400 ° C. by the electric resistance heating furnace 17. Since the flow rate of the exhaust gas flowing through the column 11 increases as the temperature in the column 11 increases, the upper limit of the temperature in the column 11 takes into consideration the flow rate of the exhaust gas in the column 11 and the reaction rate of the packing material 19 and phosphorus. The temperature is such that phosphorus in the exhaust gas can be prevented from flowing downstream from the column 11 without reacting with the filler 19. Further, the flanges 15a and 15b are maintained at a temperature not lower than the precipitation solidification temperature of phosphorus and not higher than 200 ° C. by the electric resistance heating furnace 17, and the temperature of the flanges 15a and 15b It is below the heat resistance temperature of the packing between. In order to control the temperature of the flanges 15a and 15b, the flanges 15a and 15b are structured to allow the heat transfer medium to flow, and the temperature-controlled heat transfer medium is circulated.

The exhaust gas flow path 5b is connected to the detoxification tower 23 through the fine particle removal filter 21 from the phosphorus separator 9 for semiconductor manufacturing equipment. The exhaust gas channel 5b has a heating device (not shown), and the inside of the exhaust gas channel 5b is heated and maintained at a temperature equal to or higher than the precipitation solidification temperature of the V group raw material and higher than the dew point of the V group raw material. Yes.
The detoxification tower 23 has a detoxifying agent made of a metal oxide, metal hydroxide or basic metal carbonate inside, and is configured to be able to remove the group V raw material in the exhaust gas.
The exhaust gas flow path 5c is connected from the detoxification tower 23 to the atmospheric radiation facility (not shown).

Next, the operation will be described.
First, the separation of phosphorus from exhaust gas will be described.
A group V material of arsine and phosphine is supplied to the reaction furnace 3 of the semiconductor manufacturing apparatus 1 together with hydrogen as a carrier gas. The vacuum pump 7 sucks the exhaust gas from the reaction furnace 3 into the exhaust gas passage 5a. The exhaust gas contains unreacted arsine and phosphine, decomposition products arsenic and phosphorus, and hydrogen, and the main component of phosphorus in the exhaust gas is yellow phosphorus.

Since the exhaust gas flow path 5a and the vacuum pump 7 have a temperature equal to or higher than the precipitation solidification temperature of phosphorus, the phosphorus in the exhaust gas sucked into the exhaust gas flow path 5a becomes phosphorus vapor, and the phosphorus is in the exhaust gas flow path 5a and It is prevented from sticking and depositing in the vacuum pump 7.
The exhaust gas flows from the exhaust gas flow path 5a through the flange 15a into the column 11 of the phosphorus separator 9 for semiconductor manufacturing equipment. Since the flange 15a, which is the exhaust gas inlet of the column 11, has a temperature equal to or higher than the precipitation solidification temperature of phosphorus, the phosphorus is prevented from being precipitated and solidified in the flange 15a.

Since the temperature inside the column 11 is equal to or higher than the precipitation solidification temperature of phosphorus, the phosphorus in the exhaust gas in the column 11 is phosphorus vapor. The exhaust gas flowing into the column 11 first passes between the copper wires 19 a of the filler 19. Even if a Cu ₂ O oxide film is formed on the surface of the copper wire 19a, the Cu ₂ O is reduced by hydrogen in the exhaust gas, and the reactive metal surface of the copper wire 19a is exposed in the exhaust gas. Yes. Phosphorus in the exhaust gas contacts and reacts with the copper wire 19a, and copper phosphide mainly composed of Cu ₃ P is generated on the surface of the copper wire 19a, so that phosphorus is separated from the exhaust gas. Since there is a sufficient gap in the filler 19 obtained by compression-molding the copper wire 19a, the exhaust gas flows between the copper wires 19a together with phosphorus that has not reacted with the copper wire 19a to the nickel porous material 19b.

A thin NiO oxide film is formed on the surface of the nickel porous material 19b, but NiO is easily reduced by hydrogen in the exhaust gas, and the reactive metal surface of the nickel porous material 19b is exposed in the exhaust gas. It is in a state. Phosphorus remaining in the exhaust gas without reacting with the copper wire 19a contacts and reacts with the nickel porous material 19b, and nickel phosphide mainly composed of Ni ₂ P is generated on the surface of the pores of the nickel porous material 19b. The phosphorus remaining therein is separated from the exhaust gas. The exhaust gas from which phosphorus is separated by the copper wire 19a and the nickel porous material 19b flows through the flange 15b, which is the exhaust gas outlet of the column 11, to the exhaust gas flow path 5b.

  The temperature in the column 11 is determined in consideration of the flow rate of the exhaust gas in the column 11 and the reaction rate of the packing material 19 and phosphorus, and the phosphorus in the exhaust gas flows downstream from the column 11 without reacting with the packing material 19. Therefore, all the phosphorus in the exhaust gas reacts with the copper wire 19a or the nickel porous material 19b and is separated. Therefore, phosphorus is not contained in the exhaust gas flowing through the flange 15b to the exhaust gas passage 5b.

The exhaust gas that has flowed into the exhaust gas flow path 5 b flows through the particulate removal filter 21 to the detoxification tower 23. The exhaust gas flow path 5b and the inside of the particulate removal filter 21 are at a temperature equal to or higher than the precipitation solidification temperature of phosphorus, which is a decomposition product of the V group raw material, and higher than the dew point of the V group raw material. The unreacted phosphine does not precipitate and solidify or condense in the exhaust gas flow path 5b and the particulate removal filter 21. Further, since phosphorus has already been separated from the exhaust gas, the phosphorus does not adhere and deposit in the exhaust gas flow path 5b and the particulate removal filter 21.
When the exhaust gas passes through the particulate removal filter 21, the particulates that are the reaction products and decomposition products of the raw material are collected and separated.

The exhaust gas that has passed through the particulate removal filter 21 flows into the detoxification tower 23, and phosphine is removed from the exhaust gas by the detoxifying agent in the detoxification tower 23. Therefore, phosphine is not contained in the exhaust gas that has passed through the detoxification tower 23. Further, since phosphorus has already been separated from the exhaust gas, phosphorus does not adhere and accumulate in the detoxification tower 23.
The exhaust gas that has passed through the detoxification tower 23 flows into the exhaust gas passage 5c and is diffused into the atmosphere from the atmospheric radiation facility. Harmful phosphine, arsenic, and phosphorus are removed from the exhaust gas emitted to the atmosphere, so there is no impact on the environment.

Next, maintenance of the phosphorus separator 9 for semiconductor manufacturing equipment will be described.
When the copper wire 19a reacts with phosphorus, it changes from brown having a metallic luster to silver, and when the nickel porous material 19b reacts with phosphorus, it changes from silver having metallic luster to gray. Therefore, by opening the electric resistance heating furnace 17 and observing the color of the surface of the copper wire 19a and the nickel porous material 19b in the column 11 through the transparent quartz housing 13, the replacement time of the filler 19 is determined. it can.

When exchanging the copper wire 19a and the nickel porous material 19b, the flanges 15a and 15b are removed from the housing 13 in the atmosphere, and the used copper wire 19a and the nickel porous material 19b are taken out. Then, after filling a new copper wire 19a and a nickel porous material 19b, the flanges 15a and 15b are attached.
The phosphorus taken out together with the used copper wire 19a and the nickel porous material 19b is Cu ₃ P or Ni ₂ P in a safe form in the atmosphere. Therefore, even if the replacement of the filler 19 is performed in the atmosphere, the used copper wire 19a and the nickel porous material 19b are not likely to spontaneously ignite, and the replacement work of the filler 19 becomes safe and easy.

Phosphorus does not adhere or accumulate in the exhaust gas flow path 5a and the vacuum pump 7, and the phosphorus that reacts with the filler 19 in the phosphorus separator 9 for semiconductor manufacturing equipment is in a safe form of Cu ₃ P or Ni _2. Since phosphorus does not flow downstream from the exhaust gas flow path 5b, the exhaust gas flow path 5a, the vacuum pump 7, the phosphorus separation device 9 for semiconductor manufacturing equipment, the exhaust gas flow path 5b, the particulate removal filter 21, and the removal Even if the harmful tower 23 is opened and maintained, there is no problem of spontaneous ignition of yellow phosphorus. Therefore, the maintenance work of these devices becomes safe and easy.

In this embodiment, the housing 13 of the column 11 is made of transparent quartz, and the reaction between the yellow phosphorus and the housing 13 is prevented. Instead, the housing is made of stainless steel having a strong oxide film on the surface. 13 can be used under high temperature conditions of less than 300 ° C. However, in this case, not only the color change of the copper wire 19a and the nickel porous material 19b cannot be observed from the outside of the housing 13, but also the infrared rays are directly irradiated to the filler 19 using an infrared condensing heating type electric furnace. Can not be.
Further, the flanges 15a and 15b are maintained at a temperature not lower than the precipitation solidification temperature of phosphorus and not higher than 200 ° C., but the radiation of the electric resistance heating furnace 17 is large and the temperature of the flanges 15a and 15b exceeds 200 ° C. In such a case, the length of the housing 13 may be increased or the length of the electric resistance heating furnace 17 may be decreased.

It is a block diagram of the exhaust gas flow path of a semiconductor manufacturing apparatus provided with the phosphorus separation apparatus for semiconductor manufacturing apparatuses which concerns on this invention. It is sectional drawing of the phosphorus separation apparatus for semiconductor manufacturing apparatuses which concerns on this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor manufacturing apparatus 3 Reactor 5a, 5b, 5c Exhaust gas flow path 7 Vacuum pump 9 Phosphor separator for semiconductor manufacturing apparatus 11 Column 13 Housing 15a, 15b Flange 17 Electrical resistance heating furnace 19 Filler 19a Copper wire 19b Nickel porous Material 21 Fine particle removal filter 23 Detoxification tower

Claims (3)

A column through which the exhaust gas from the semiconductor manufacturing equipment passes;
A filler comprising at least one of a copper, nickel, cobalt or cadmium wire and a porous material of copper, nickel, cobalt or cadmium, filled in a column and in contact with exhaust gas;
And a heating means for heating the inside of the column to a temperature equal to or higher than the precipitation solidification temperature of phosphorus.   2. The phosphorus separator for a semiconductor manufacturing apparatus according to claim 1, wherein the porous material is a foam metal having a porosity of 98% or more.   The phosphorus separator for a semiconductor manufacturing apparatus according to claim 1 or 2, wherein the exhaust gas inlet side of the column is filled with a wire material and the outlet side is filled with a porous material.

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